CN117187785B - Chemical vapor deposition device and method - Google Patents
Chemical vapor deposition device and method Download PDFInfo
- Publication number
- CN117187785B CN117187785B CN202311477657.2A CN202311477657A CN117187785B CN 117187785 B CN117187785 B CN 117187785B CN 202311477657 A CN202311477657 A CN 202311477657A CN 117187785 B CN117187785 B CN 117187785B
- Authority
- CN
- China
- Prior art keywords
- substrate
- vapor deposition
- chemical vapor
- inner support
- guide plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims description 139
- 239000007789 gas Substances 0.000 claims description 60
- 238000006243 chemical reaction Methods 0.000 claims description 40
- 239000012495 reaction gas Substances 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 30
- 230000008021 deposition Effects 0.000 claims description 29
- 230000005540 biological transmission Effects 0.000 claims description 23
- 238000009826 distribution Methods 0.000 claims description 15
- 230000007246 mechanism Effects 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000012544 monitoring process Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000000376 reactant Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 8
- 238000004088 simulation Methods 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000033001 locomotion Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 244000188472 Ilex paraguariensis Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- -1 heat source power Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The application belongs to the technical field of semiconductors, and relates to a chemical vapor deposition device and a chemical vapor deposition method. The guide plates are arranged corresponding to each air inlet, so that batch adjustment or independent adjustment is facilitated, and the adaptability is high.
Description
Technical Field
The present disclosure relates to the field of semiconductor technology, and in particular, to a chemical vapor deposition apparatus and a chemical vapor deposition method.
Background
In the prior art, a chemical vapor deposition apparatus includes a reaction chamber, a heater, and the like. There are the following problems:
(1) the concentration distribution of the reaction gas cannot be controlled in the reaction chamber. In the conventional vapor deposition apparatus, the concentration of the reactant gas can be freely distributed only by means of the flow diffusion of the reactant gas after the reactant gas enters the reaction chamber through the inlet or the flow divider. The concentration distribution of the reactant in the reaction cavity cannot be sufficiently predicted and controlled, and further, different reaction deposition rates may exist at different positions, which is not beneficial to the stability of the process.
(2) The process is relatively limited in terms of products. In conventional vapor deposition apparatuses, either to ensure uniformity of the reaction gases, only a single product is subjected to a process operation at a time; or to increase the throughput, the process is performed on multiple products simultaneously, but the vapor deposition uniformity is significantly reduced.
(3) Temperature uniformity of the substrate and chamber space is particularly important in the case of full surface or dual sided deposition of the substrate. In the conventional vapor deposition apparatus, the heater cannot ensure uniform heating of the reaction chamber and the substrate under the condition of ensuring stable heating.
Disclosure of Invention
In view of the foregoing, embodiments of the present application provide a chemical vapor deposition apparatus and a method for solving at least one of the problems in the background art.
In a first aspect, embodiments of the present application provide a chemical vapor deposition apparatus, including:
an outer housing in which a reaction chamber is formed; the side wall of the outer shell is provided with a plurality of air inlets, and the air inlets are used for allowing reaction gas to be introduced into the reaction chamber from the outside of the outer shell;
a substrate disposed within the reaction chamber;
the guide plates are arranged in the reaction chamber, are arranged on part or all of the air inlets and are positioned on the air inlet paths of the corresponding air inlets to guide the flow direction of the introduced reaction gas;
and the guide plate control assembly is connected with the guide plate and used for changing the orientation angle of the guide plate.
The chemical vapor deposition device provided by the embodiment of the application can control the concentration distribution of the reaction gas in the reaction chamber. The guide plates are arranged corresponding to each air inlet, so that batch adjustment or independent adjustment is facilitated, and the adaptability is high.
With reference to the first aspect of the present application, in an alternative embodiment, the baffle control assembly includes:
a drive assembly;
and one end of the movable rod is connected with the driving assembly, and the other end of the movable rod is connected with the guide plate.
In this alternative embodiment, the movable rod may be provided so that the driving assembly drives the baffle to rotate from a position away from the baffle.
With reference to the first aspect of the present application, in an optional implementation manner, a rail is provided on one side of the deflector, and a sliding block is slidably connected to the rail;
the guide plate control assembly further comprises a fixing rod, one end of the fixing rod is fixed on the side wall of the outer shell, and the other end of the fixing rod is connected with the sliding block through a first rotating shaft.
In this alternative embodiment, the sliding block increases the freedom of movement of the baffle, so that the movement mode of the driving assembly can be simpler, and the cost of the driving assembly is reduced.
With reference to the first aspect of the present application, in an alternative embodiment, the chemical vapor deposition apparatus further includes an inner support housing, the inner support housing being disposed inside the outer housing, the substrate being connected to a sidewall of the inner support housing;
the inner side of the inner support shell is hollow, and a rotation driving mechanism extending from the inner side to the outer side is arranged and connected with the substrate to drive the substrate to rotate.
In this alternative embodiment, the substrate may be rotated, and the rotation of the substrate may further improve the uniformity of the deposited product.
In combination with the first aspect of the present application, in an alternative embodiment, the rotation driving mechanism includes:
and the gear transmission rod group is arranged along at least part of the substrate arrangement direction and is fixed on the inner side of the side wall of the inner support shell through a bearing assembly.
In the alternative embodiment, the transmission mode of the gear transmission rod group is more suitable for synchronous transmission of a plurality of substrates which are orderly arranged, and has more advantages than other transmission modes.
With reference to the first aspect of the present application, in an alternative embodiment, a rotating frame is mounted on the outer side of the side wall of the inner support housing through a bracket positioning tube, and the substrate is mounted on the rotating frame;
the power output end of the gear transmission rod group penetrates through the inner part of the bracket positioning tube to be connected with the rotating frame, and the power input end is connected with the rotating driving piece.
In this alternative embodiment, the structure of swivel mount is convenient for support the substrate and drive the substrate, and the support registration arm is convenient for fix the swivel mount and be convenient for the gear drive pole group passes on the inner support casing to play the effect to gear drive pole group protection.
With reference to the first aspect of the present application, in an alternative embodiment, the side wall of the inner support casing is tapered, and a plurality of the substrates are arranged along the circumference of the taper and/or along a generatrix of the taper;
the chemical vapor deposition device further comprises a heater, wherein the heater is arranged on the inner side of the side wall of the inner support shell, and a heating wire of the heater is spirally wound along the side wall of the inner support shell;
the heating wire is coiled to form a tapered shape matching with the side wall of the inner support housing.
In the alternative embodiment, a plurality of substrates are uniformly dispersed by adopting a transverse and longitudinal three-dimensional layout between the substrates, so that the batch production is convenient. The heater forms a cone shape by a spiral coiling mode, can be well matched with the shape of the inner support shell, and can promote the heating uniformity of different substrates.
In a second aspect, embodiments of the present application provide a chemical vapor deposition method, the method comprising:
s1, arranging a guide plate in a reaction chamber of a chemical vapor deposition device, and enabling the guide plate to be positioned on an air inlet path of a corresponding air inlet;
s2, controlling the guide plate to change the orientation angle, so that the concentration distribution of the reaction gas which is introduced into the reaction chamber and concentrated on the corresponding substrate is changed.
The chemical vapor deposition method provided by the embodiment of the application can control the concentration distribution of the reaction gas in the reaction chamber.
With reference to the second aspect of the present application, in an alternative embodiment, in step S2, the substrate is further controlled to rotate. In this alternative embodiment, rotation of the substrate can further promote uniformity of product deposition.
In combination with the second aspect of the present application, in an alternative embodiment, before step S2, the required orientation angle of each baffle is obtained according to the structural parameters of the chemical vapor deposition apparatus, the density of the introduced reaction gas, and the parameters of the flow rate of the reaction gas at the gas inlet.
In the alternative embodiment, the most suitable orientation angle of the guide plate can be obtained before the production of the product in a pre-calculation mode, so that the best process state is facilitated during the production of the product.
With reference to the second aspect of the present application, in an optional embodiment, the method further includes step S3:
monitoring the substrate surface temperature and concentration data;
determining a surface deposition rate on the substrate based on the surface temperature and concentration data;
distinguishing a first type of substrate with a surface deposition rate greater than a preset range and a second type of substrate with a surface deposition rate less than the preset range from a plurality of substrates;
and controlling the orientation angle of the deflector corresponding to the first type of substrate to deviate to one side of the second type of substrate.
In the alternative embodiment, the reaction gas concentration of the reaction chamber is optimized by utilizing the monitored data feedback and better adjusting the guide plate in a real-time monitoring mode.
According to the chemical vapor deposition device and the chemical vapor deposition method, the guide plate is arranged at the position of the air inlet to guide the flow direction of the reaction gas introduced into the reaction chamber, and the guide plate control assembly is utilized to adjust the direction angle of the guide plate, so that the concentration of the reaction gas near the substrate in the reaction chamber can be adjusted to a better range, and the improvement of the process stability is facilitated. The guide plates are arranged corresponding to each air inlet, so that batch adjustment or independent adjustment is facilitated, and the adaptability is high.
Additional aspects and advantages of the application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the application.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:
FIG. 1 is a schematic cross-sectional view of a chemical vapor deposition apparatus according to an embodiment of the present disclosure;
FIG. 2 is a graph of the reactant mole fraction distribution (without baffles) provided in the comparative example of the present application;
FIG. 3 is a graph of reactant mole fraction distribution (with baffles) provided in an example of the present application;
FIG. 4 is a schematic diagram illustrating an internal structure of a chemical vapor deposition apparatus according to an embodiment of the present disclosure;
FIG. 5 is a schematic structural diagram of a baffle and a baffle control assembly according to an embodiment of the present disclosure;
FIG. 6 is a schematic cross-sectional view of a rotary driving mechanism according to an embodiment of the present disclosure;
FIG. 7 is a schematic cross-sectional view of a bracket assembly according to an embodiment of the present disclosure;
fig. 8 is a schematic perspective view of a stand assembly according to an embodiment of the present disclosure;
fig. 9 is a schematic diagram of a heater according to an embodiment of the present application.
The reference numerals in the figures are:
1-an outer shell;
2-an inner support housing;
3-a substrate;
4-a rotation driving mechanism;
5-a deflector;
6-a baffle control assembly;
7-a heater;
11-air inlet;
12-exhaust port;
41-a rotating rack;
42-a first transmission rod;
43-a second transmission rod;
44-a third drive rod;
45-fourth transmission rod;
46-a bearing assembly;
47-bracket positioning tube;
61-fixing the rod;
62-a movable rod;
63-a first rotation axis;
64-fixing blocks;
65-sliding blocks;
66-second axis of rotation.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present application. However, it will be apparent to one skilled in the art that the present application may be practiced without one or more of these details. In other instances, well-known features have not been described in detail so as not to obscure the application; that is, not all features of an actual implementation are described in detail herein, and well-known functions and constructions are not described in detail.
In the drawings, the size of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like numbers refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on" … …, "" adjacent to "… …," "connected to" or "coupled to" another element or layer, it can be directly on, adjacent to, connected to or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on" … …, "" directly adjacent to "… …," "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application. When a second element, component, region, layer or section is discussed, it does not necessarily mean that the first element, component, region, layer or section is present in the present application.
Spatially relative terms, such as "under … …," "under … …," "below," "under … …," "above … …," "above," and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "under … …" and "under … …" may include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
For a thorough understanding of the present application, detailed steps and detailed structures will be presented in the following description in order to explain the technical aspects of the present application. Preferred embodiments of the present application are described in detail below, however, the present application may have other implementations in addition to these detailed descriptions.
The present embodiment provides a chemical vapor deposition apparatus, as shown in fig. 1, including:
the reaction chamber is formed in the outer shell 1; the side wall of the outer shell 1 is provided with a plurality of air inlets 11, and the air inlets 11 are used for leading reaction gas into the reaction chamber from the outside of the outer shell 1;
a substrate 3 disposed in the reaction chamber;
the guide plates 5 are arranged in the reaction chamber, the guide plates 5 are arranged on part or all of the air inlets 11, and the guide plates 5 are positioned on the air inlet paths of the corresponding air inlets 11 so as to guide the flowing direction of the introduced reaction gas;
and the guide plate control assembly 6 is connected with the guide plate 5 and is used for changing the orientation angle of the guide plate 5.
The working principle of the chemical vapor deposition device of this embodiment is as follows:
1. the outer casing 1 functions as a reaction chamber, the gas inlet 11 of which is used for introducing reaction gas, and the gas outlet 12 is used for discharging residual gas;
2. the substrate 3 is used as a carrier for depositing the reaction gas, the substrate 3 is arranged corresponding to the gas inlets 11, that is, the number of the substrates 3 and the number of the gas inlets 11 have a corresponding relation, generally, one gas inlet 11 is correspondingly provided with one substrate 3, and meanwhile, the substrate 3 has a corresponding relation with the gas inlet 11 in position, for example, the substrate 3 is positioned at a lower position on one side of the corresponding gas inlet 11, so that the substrate 3 can be aligned with the gas inlet path of the corresponding gas inlet 11 for introducing the reaction gas;
3. the baffle 5 plays a role of blocking gas, is in the shape of a plate or a sheet, and is physically required to be high-temperature resistant, airtight and rigid to meet the requirement of not deforming itself under the impact of air flow. The baffle 5 can block the gas, and the original flow direction can be obviously changed along the plate surface when the gas rushes to the plate surface because of the shape of the plate and the sheet, so the baffle 5 has the function of guiding the gas flow direction. In addition, the change of the orientation angle of the deflector 5 will likewise change the direction of the gas; the guide plates 5 are mutually independent, one guide plate 5 can be independently adjusted, and a plurality of guide plates 5 can be simultaneously adjusted, so that the adaptability is high;
4. the baffle control assembly 6 serves to change the orientation angle of the baffle 5, which may be an absolute angle, such as 30 °, 40 ° from horizontal, etc., or a relative angle, such as 10 °, -10 ° from the corresponding substrate 3, etc.
5. Description of the effect of the baffle 5: fig. 2 shows the distribution diagram of the gas concentration after the gas inlet 11 is filled with the reaction gas without the baffle plate 5, and it can be seen that the reaction gas cannot reach the bottom surface of the substrate 3 due to the influence of the upper substrate 3 on the gas flow, and also hardly reaches the region where other substrates 3 are located; while fig. 3 shows the distribution of the gas concentration when the baffle 5 is provided, it can be seen that the baffle 5 can adjust the gas flow, improve the gas concentration distribution, and facilitate deposition.
6. Description of the effect of the baffle 5 to change the angle of orientation: as shown in fig. 2 and 3, the baffle 5 can change the concentration distribution of the reaction gas at the substrate 3, and at this time, if the baffle 5 is driven by the baffle control assembly 6 to change the direction continuously, the concentration uniformity of the reaction gas at the position of each substrate 3 should be improved.
Alternatively, the positions of the air inlet 11, the baffle 5 and the substrates 3 are in one-to-one correspondence in this embodiment, so that each substrate 3 is associated with a specific baffle 5, and it is convenient to adjust to serve a plurality of baffles 5 as necessary for one substrate 3.
Alternatively, as shown in fig. 4 and 5, the baffle control assembly 6 of the chemical vapor deposition apparatus of the present embodiment includes:
a fixed rod 61, one end of which is fixed on the side wall of the outer casing 1, and the other end of which is connected with the deflector 5 through a first rotating shaft 63;
the movable rod 62 has one end connected to the driving assembly and the other end connected to the baffle 5 via a second rotation shaft 66.
In this alternative, the fixed rod 61 serves as a support for the base of the baffle 5, the first rotational axis 63 provides the freedom of rotation of the baffle 5, and the movable rod 62 serves as a traction for the baffle 5, thereby changing the orientation angle of the baffle 5. The movable rod 62 can drive the deflector 5 to rotate in a swinging, axial moving, radial moving and other modes, and the driving component can select a motor or a cylinder and other power sources.
Alternatively, as shown in fig. 5, a track is provided on one side of the baffle 5, and the track is slidably connected with a sliding block 65, and the first rotating shaft 63 is mounted on the sliding block 65. In this scheme, guide plate 5 can slide relative to dead lever 61, and such setting can make movable rod 62 only need follow self axial movement just can drive guide plate 5 and rotate under drive assembly's drive, because drive assembly generally needs to install in the shell body 1 outside under the actual conditions, movable rod 62 just has to pass shell body 1 lateral wall, and shell body 1 lateral wall just needs to have the through-hole like this, and when movable rod 62 only does axial movement, the design of this through-hole can be matees with the cross-section of movable rod 62, conveniently seals. A fixed block 64 may be provided on one side of the baffle 5 to facilitate the installation of the second rotating shaft 66.
For sealing convenience, the above solution may be replaced by a movable rod 62 comprising a moving section and a swinging section, the first end of the moving section being hinged to the first end of the swinging section;
the side wall of the outer shell 1 is provided with a through hole, the moving section is arranged in the through hole and can move along the axial direction of the through hole, the second end of the swinging section is connected with the guide plate 5 through a second rotating shaft 66, and the second end of the moving section is connected with the driving assembly. Under this alternative, divide into two sections structures of swivelling joint with movable rod 62, increased the degree of freedom of activity, can realize that the movable segment only need do the axial displacement along oneself under drive assembly's drive, be favorable to sealing.
Alternatively, in the chemical vapor deposition apparatus of the present embodiment, one end of the fixing rod 61 is fixed to the side wall of the outer case 1 by an adjustable structure capable of adjusting the distance between the other end of the fixing rod 61 and the side wall of the outer case 1. With this structure, the position of the baffle 5 can be adjusted, which is convenient for the baffle 5 to get close to or get away from the corresponding air inlet 11 or the substrate 3, so as to change the deposition effect. Structurally, the adjustable structure can be a structure such as a thread, a sliding block or a telescopic piece, and the adjustable structure can be fixed by a locking structure after adjustment is completed.
Optionally, as shown in fig. 4, the chemical vapor deposition apparatus of the present embodiment further includes an inner support housing 2, the inner support housing 2 is disposed inside the outer housing 1, and the substrate 3 is connected to a sidewall of the inner support housing 2 through a bracket assembly.
The inner side of the inner support housing 2 is hollow, and a rotation driving mechanism 4 extending from the inner side to the outer side is provided, and the rotation driving mechanism 4 is connected with the substrate 3 to drive the substrate 3 to rotate axially around itself. In this scheme, the inner support housing 2 is used for bearing each substrate 3, the space inside the inner support housing 2 is used for installing the rotation driving mechanism 4, and the rotation driving mechanism 4 is used for driving each substrate 3 to rotate, so that the uniformity of deposition on the substrate 3 is further improved. The principle is that when the substrate 3 rotates, if the introduced reaction gas is concentrated on the right side of the substrate 3, the position of the right side of the substrate 3 is continuously changed along the rotation direction after the substrate 3 rotates, so that the uniformity of deposition is not affected even if the introduced reaction gas is biased to one side when the substrate 3 continuously rotates.
Alternatively, as shown in fig. 6 to 8, the chemical vapor deposition apparatus of the present embodiment, the rotation driving mechanism 4 includes:
a gear transmission rod group arranged along the arrangement direction of at least part of the substrates 3, the gear transmission rod group being fixed on the inner side of the side wall of the inner support shell 2 through a bearing assembly 46;
the bracket assembly comprises a bracket positioning tube 47 and a rotating frame 41, wherein the rotating frame 41 is fixed on the outer side of the side wall of the inner support shell 2 through the bracket positioning tube 47, and the substrate 3 is arranged on the rotating frame 41;
the power output end of the gear transmission rod group penetrates through the bracket positioning tube 47 and is internally connected with the rotating frame 41, and the power input end is connected with the rotating driving piece.
In this alternative, the gear driving rod set is formed by connecting a plurality of driving rods end to end, the driving rods are engaged and connected through bevel gears, and this embodiment provides a connection mode of the driving rods, as shown in fig. 6-8, the gear driving rod set includes a first driving rod 42, a second driving rod 43, a third driving rod 44 and a fourth driving rod 45 which are sequentially connected through bevel gears, and a corresponding array of substrates 3 is arranged along the extending direction of the second driving rod 43, a bevel gear is disposed on the second driving rod 43 corresponding to the position of each substrate 3 to connect the first driving rod 42 (the number of the first driving rods 42 corresponds to the number of the substrates 3) in each support positioning tube 47, the bearing assembly 46 includes a bearing seat and a bearing, and the corresponding first driving rod 42, the second driving rod 43, the third driving rod 44 and the fourth driving rod 45 are configured so as to be capable of stably supporting each driving rod, and generally more than two bearing assemblies 46 need to be configured for each driving rod. The number of transmission rods required for a particular transmission rod is related to the shape of the inner support housing 2, the more complex the shape of the inner support housing 2, the greater the number of transmission rods required. One end of the rotating frame 41 is also provided with a bevel gear to be meshed with the bevel gear on the first transmission rod 42 for transmission. The rotation driving member may adopt a motor, and drives the rotation of each transmission rod through the rotation of the output shaft of the motor, and then drives the rotation of the rotating frame 41, so as to realize the rotation of the substrate 3.
Optionally, as shown in fig. 4 and 6, the chemical vapor deposition apparatus of the present embodiment has a tapered side wall of the inner support casing 2, and a plurality of substrates 3 are arranged along the circumference (transverse direction) of the taper and/or along the generatrix (longitudinal direction) of the taper;
the chemical vapor deposition apparatus further includes a heater 7, as shown in fig. 9, the heater 7 is disposed inside the sidewall of the inner support case 2, and a heating wire of the heater 7 is spirally wound along the sidewall of the inner support case 2, and the heating wire is wound to form a tapered shape matching the sidewall of the inner support case 2.
In the scheme, a plurality of substrates 3 are uniformly dispersed by adopting a transverse and longitudinal three-dimensional layout among the substrates 3, so that the batch production is convenient. And the substrates 3 are arranged along a tapered bus in the longitudinal direction, so that the gear transmission rod group can be conveniently abutted, namely, one row of substrates 3 is connected through one gear transmission rod group. The tapered shape is designed so that the distance between the upper substrate 3 and the gas inlet 11 is greater than that between the lower substrate 3, and thus, adjacent layers can be better staggered, and the influence of each other in gas concentration is avoided. The heater 7 forms a cone shape by a spiral coiling mode, can be well matched with the shape of the inner support shell 2, can promote the heating uniformity of different substrates 3, ensures that all the substrates 3 in the reaction chamber are almost at the same temperature, and is beneficial to improving the yield of the process. The heater 7 transfers heat into the reaction chamber by heat radiation and heat convection in such a way that contact of the heater with the gas is avoided, and deposition on the surface of the heater is prevented, thereby avoiding influencing the heating power of the heater. In addition, the heater structure and the position relative to the substrate 3 can be changed, so that the highest heat of the heater 7 is controlled to be transmitted to the position on the inner support shell 2, and the controllability of high and low temperatures is realized to a certain extent.
The embodiment provides a chemical vapor deposition method, which comprises the following steps:
s1, arranging a guide plate 5 in a reaction chamber of a chemical vapor deposition device, and enabling the guide plate 5 to be positioned on an air inlet path of a corresponding air inlet 11;
s2, controlling the deflector 5 to change the orientation angle, so that the concentration distribution of the reaction gas which is introduced into the reaction chamber and concentrated on the corresponding substrate 3 is changed.
The method can optimize the concentration distribution of the reaction gas in the reaction chamber and avoid the product quality degradation caused by uneven deposition on the substrate 3. Particularly for some larger products or special-shaped products, the flow guide plate with specific angle and position can only cover a part of the surface of the product, and the flow guide plate 5 can be connected with a control system at the moment, so that the flow guide plate 5 swings according to specific speed and specific angle range, and the uniformity of the gas concentration on the surface of the substrate 3 can be greatly improved.
Alternatively, in the chemical vapor deposition method of the present embodiment, in step S2, the rotation of the substrate 3 is also controlled. When the substrate 3 rotates, if the introduced reaction gas is concentrated on the right side of the substrate 3, the position of the right side of the substrate 3 is changed continuously along the rotation direction after the substrate 3 rotates, so that the uniformity of deposition is not affected even if the introduced reaction gas is biased to one side when the substrate 3 rotates continuously.
Optionally, in the chemical vapor deposition method of the present embodiment, before step S2, the required orientation angle of each baffle plate 5 is obtained by fluid dynamic calculation or numerical analysis according to the structure of the chemical vapor deposition apparatus, the density of the gas introduced, and the parameters of the gas flow rate of the gas inlet 11. After the reaction gas enters the chamber through the gas inlet 11, the jet flow track (namely the initial motion track of the reaction gas in the chamber) of the reaction gas is determined by parameters such as equipment structure, gas density, inlet gas flow speed and the like, as shown in fig. 2 and 3, the reaction gas is guided to a specific position such as the vicinity of the surface of the substrate 3 by adjusting the angle and the position of the deflector 5 through a method such as hydrodynamic calculation or numerical analysis and the like so as to facilitate deposition of a product on the surface of the substrate. The concentration of the reactants near the substrate 3 can be effectively controlled by the baffle control assembly 6 according to the needs of different vapor deposition processes or different time periods during the vapor deposition process.
The following provides a method for determining the orientation angle of the deflector 5: the diameter of the substrate isφ. The number of substrates is a×b (layer×column); the rotation driving mechanism 4 is set b. The number of air inlets 11 corresponds to the number of the guide plates 5 and is a×b.
The orientation angle of the deflector is obtained by computational fluid dynamics numerical simulation, and the method comprises the following steps: (1) assuming that the initial orientation angle of the deflector is alpha 0 ，α 0 An included angle between the connecting line of the center of the corresponding air inlet 11 and the center of the substrate 3 and the horizontal plane; (2) at an angle alpha 0 Numerical simulation was performed, and if the reactant gas was allowed to flow to the vicinity of the surface of the substrate 3, the orientation angle of the baffle plate 5 was set to α 0 If the gas is biased above the substrate 3, beta is defined 0 =（5%~10%）α 0 ，α 1= α 0+ β 0 If the gas is biased under the substrate, alpha is defined 1= α 0- β 0 The method comprises the steps of carrying out a first treatment on the surface of the (3) At an angle alpha 1 Numerical simulation is performed, and if the reactant gas can be led to the vicinity of the surface of the substrate, the orientation angle of the deflector is determined to be alpha 1 If the gas is biased above the substrate, define beta 1 =（80%~90%）β 0 ，α 2= α 1+ β 1 If the gas is biased under the substrate, alpha is defined 2= α 1- β 1 The method comprises the steps of carrying out a first treatment on the surface of the (4) At an angle alpha 2 Numerical simulation is performed, and if the reactant gas can be led to the vicinity of the surface of the substrate, the orientation angle of the deflector is determined to be alpha 2 If the gas is biased above the substrate, define beta 2 =（70%~80%）β 1 ，α 3= α 2+ β 2 If the gas is biased under the substrate, alpha is defined 3= α 2- β 2 The method comprises the steps of carrying out a first treatment on the surface of the … …. Finally, the optimal orientation angle alpha can be obtained n At this angle, the reactant gases can be accurately directed near the substrate surface. In most cases, if the substrate position and the air inlet 11 position are arranged at a distance, all the deflectors 5 can be uniformly oriented at an angle alpha n Setting is performed. In some cases, the number of layers of the substrate 3 and the air inlet 11 with different heights are not designed according to the same distance, the computational fluid dynamics numerical simulation is required to be performed on the layer of the baffle plate 5 farthest from the air outlet 12, then the computational fluid dynamics numerical simulation is performed on the layer of the baffle plate 5 second farthest from the air outlet 12, and the direction angles of the baffle plates 5 of each layer are obtained finally.
The reaction gas flows in from the gas inlet 11, is guided to the vicinity of the surface of the substrate 3 by the guide plate 5, deposition reaction occurs on the surface of the substrate 3, and part of unreacted gas and production gas flow out from the bottom gas outlet 12.
The vapor deposition numerical simulation theory adopted in this example includes the following steps,
and constructing a geometric model and discretizing grid division.
Grid boundary conditions and initial parameters are defined in a numerical solver. Such as CVD chamber wall materials, heat source power, reactant gas properties, gas incidence rates, individual component gas concentrations, and the like.
The reaction mechanism is defined in a numerical solver. Such as reaction equations, and their stoichiometric constants, reaction rate coefficients, reaction activation energies, etc.
And (5) calculating by a solver. And calculating a continuity equation, a momentum equation, a heat equation, a chemical reaction transport equation and the like related to the model.
And outputting a visual result. Outputting a gas composition concentration map, a gas velocity profile, a chamber temperature profile, a vapor deposition rate profile, etc.
Optionally, the chemical vapor deposition method of the present embodiment further includes step S3,
monitoring surface temperature and concentration data of the substrate 3;
determining a surface deposition rate on the substrate 3 based on the surface temperature and concentration data;
distinguishing a first type of substrate with a surface deposition rate greater than a preset range and a second type of substrate with a surface deposition rate less than the preset range from the plurality of substrates 3;
the orientation angle of the deflector 5 corresponding to the first type of substrate is controlled to deviate to one side of the second type of substrate. In this embodiment, a temperature sensor and a reaction gas concentration sensor are placed at appropriate positions selected near the surface of the substrate 3. The temperature and concentration data changes on the surface of each substrate 3 can be monitored in real time.
The surface deposition rate in the preset range meets the process requirement, and can effectively ensure the product qualification rate. The reaction gas flows in from the gas inlet 11 and is guided to the vicinity of the surface of the substrate 3 through the guide plate 5. Calculating the deposition rate of the surface of the substrate according to the chemical kinetics methods such as Arrhenii Wu Sigong and the like by using the temperature/concentration data of the surface of the substrate monitored in real time, wherein the deposition rate of the surface of the substrate 3 is higher, and the deposition rate of the surface of the substrate 3 is lower; the orientation angle of the deflector 5 is adjusted, more reaction gas is guided to the vicinity of the second type of substrate with lower surface deposition rate, and the flow of the gas to the first type of substrate with higher surface deposition rate is reduced, so that the surface deposition rates of the first type of substrate and the second type of substrate can both meet the preset range, and the uniformity of the surface deposition rates between the substrates can be controlled in real time. Part of the unreacted gas and the process gas flow out through the bottom exhaust port 12.
It should be understood that the above examples are illustrative and are not intended to encompass all possible implementations encompassed by the claims. Various modifications and changes may be made in the above embodiments without departing from the scope of the disclosure. Likewise, the various features of the above embodiments may be combined arbitrarily to form further embodiments of the application that may not be explicitly described. Thus, the above examples merely represent several embodiments of the present application and do not limit the scope of protection of the patent of the present application.
Claims (10)
1. A chemical vapor deposition apparatus, comprising:
an outer shell (1), wherein a reaction chamber is formed in the outer shell (1); the side wall of the outer shell (1) is provided with a plurality of air inlets (11), and the air inlets (11) are used for allowing reaction gas to be introduced into the reaction chamber from the outside of the outer shell (1);
a substrate (3) disposed within the reaction chamber;
the guide plates (5) are arranged in the reaction chamber, the guide plates (5) are arranged on part or all of the air inlets (11), and the guide plates (5) are positioned on the air inlet paths of the corresponding air inlets (11) so as to guide the flow direction of the introduced reaction gas;
and the deflector control assembly (6) is connected with the deflector (5) and is used for changing the orientation angle of the deflector (5) so as to change the concentration distribution of the reaction gas at the substrate (3).
2. The chemical vapor deposition apparatus of claim 1, wherein the baffle control assembly comprises:
a drive assembly;
and one end of the movable rod (62) is connected with the driving assembly, the other end of the movable rod is connected with the guide plate (5), and the movable rod (62) drives the guide plate (5) to move under the driving of the driving assembly.
3. Chemical vapor deposition device according to claim 2, characterized in that a rail is provided on one side of the deflector (5), said rail being slidingly connected with a sliding block (65);
the guide plate control assembly further comprises a fixing rod (61), one end of the fixing rod (61) is fixed on the side wall of the outer shell (1), and the other end of the fixing rod is connected with the sliding block (65) through a first rotating shaft (63).
4. The chemical vapor deposition apparatus according to claim 1, further comprising an inner support housing (2), the inner support housing (2) being disposed inside the outer housing (1), the substrate (3) being attached to a side wall of the inner support housing (2);
the inner side of the inner support shell (2) is hollow, and a rotation driving mechanism extending from the inner side to the outer side is arranged and connected with the substrate (3) to drive the substrate (3) to rotate.
5. The chemical vapor deposition apparatus according to claim 4, wherein the rotation driving mechanism comprises:
and the gear transmission rod group is arranged along the arrangement direction of at least part of the substrates (3) and is fixed on the inner side of the side wall of the inner support shell (2) through a bearing assembly (46).
6. The chemical vapor deposition apparatus according to claim 5, wherein a spin stand (41) is mounted on the outside of the side wall of the inner support housing (2) through a stand positioning pipe (47), and the substrate (3) is mounted on the spin stand (41);
the power output end of the gear transmission rod group penetrates through the bracket positioning tube (47) to be connected with the rotating frame (41), and the power input end of the gear transmission rod group is connected with the rotating driving piece.
7. Chemical vapor deposition device according to any one of claims 4 to 6, characterized in that the side walls of the inner support housing (2) are tapered, a number of the substrates (3) being arranged along the circumference of the taper and/or along the generatrix of the taper;
the chemical vapor deposition device further comprises a heater (7), wherein the heater (7) is arranged on the inner side of the side wall of the inner support shell (2), and a heating wire of the heater (7) is spirally wound along the side wall of the inner support shell (2);
the heating wire is coiled into a conical shape matching with the side wall of the inner support shell (2).
8. A chemical vapor deposition method, characterized in that the chemical vapor deposition apparatus according to any one of claims 1 to 7 is used, the method comprising:
s1, arranging a guide plate (5) in a reaction chamber of the chemical vapor deposition device, and enabling the guide plate (5) to be positioned on an air inlet path of a corresponding air inlet (11);
s2, controlling the guide plate (5) to change the orientation angle, so that the concentration distribution of the reaction gas which is introduced into the reaction chamber and concentrated on the corresponding substrate (3) is changed.
9. The chemical vapor deposition method according to claim 8, further comprising, prior to step S2: and obtaining the required orientation angle of each guide plate (5) according to the structural parameters of the chemical vapor deposition device, the density of the introduced reaction gas and the parameters of the reaction gas flow rate of the gas inlet (11).
10. The chemical vapor deposition method according to claim 8 or 9, further comprising step S3:
monitoring surface temperature and concentration data of the substrate (3);
determining a surface deposition rate on the substrate (3) from the surface temperature and concentration data;
distinguishing a first type of substrate with a surface deposition rate greater than a preset range and a second type of substrate with a surface deposition rate less than the preset range from a plurality of substrates (3);
and controlling the orientation angle of the deflector (5) corresponding to the first type of substrate to deviate to one side of the second type of substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311477657.2A CN117187785B (en) | 2023-11-08 | 2023-11-08 | Chemical vapor deposition device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311477657.2A CN117187785B (en) | 2023-11-08 | 2023-11-08 | Chemical vapor deposition device and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117187785A CN117187785A (en) | 2023-12-08 |
| CN117187785B true CN117187785B (en) | 2024-02-23 |
Family
ID=88989159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311477657.2A Active CN117187785B (en) | 2023-11-08 | 2023-11-08 | Chemical vapor deposition device and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117187785B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4993358A (en) * | 1989-07-28 | 1991-02-19 | Watkins-Johnson Company | Chemical vapor deposition reactor and method of operation |
| US7314526B1 (en) * | 1999-03-25 | 2008-01-01 | Lpe S.P.A. | Reaction chamber for an epitaxial reactor |
| CN101265570A (en) * | 2008-04-30 | 2008-09-17 | 苏州纳晶光电有限公司 | High-temperature metal organic chemical gas-phase deposition reactor |
| CN215288962U (en) * | 2021-08-02 | 2021-12-24 | 聚能纳米科技(苏州)有限公司 | Vacuum vapor deposition reaction chamber |
| CN115558905A (en) * | 2022-12-01 | 2023-01-03 | 浙江晶越半导体有限公司 | Method and reactor for improving deposition rate and uniformity of silicon carbide |
-
2023
- 2023-11-08 CN CN202311477657.2A patent/CN117187785B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4993358A (en) * | 1989-07-28 | 1991-02-19 | Watkins-Johnson Company | Chemical vapor deposition reactor and method of operation |
| US7314526B1 (en) * | 1999-03-25 | 2008-01-01 | Lpe S.P.A. | Reaction chamber for an epitaxial reactor |
| CN101265570A (en) * | 2008-04-30 | 2008-09-17 | 苏州纳晶光电有限公司 | High-temperature metal organic chemical gas-phase deposition reactor |
| CN215288962U (en) * | 2021-08-02 | 2021-12-24 | 聚能纳米科技(苏州)有限公司 | Vacuum vapor deposition reaction chamber |
| CN115558905A (en) * | 2022-12-01 | 2023-01-03 | 浙江晶越半导体有限公司 | Method and reactor for improving deposition rate and uniformity of silicon carbide |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117187785A (en) | 2023-12-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100998011B1 (en) | Chemical vapor deposition apparatus | |
| JP5005656B2 (en) | Chemical vapor deposition equipment | |
| TWI567226B (en) | Method and apparatus for depositing atomic layers on a substrate | |
| KR101161407B1 (en) | Chemical Vapor Deposition Apparatus | |
| CN102414794B (en) | CVD apparatus for improved film thickness non-uniformity and particle performance | |
| ES2543732T3 (en) | CVD reactor for the deposition of layers from a mixture of reaction gas on work pieces | |
| TWI755329B (en) | Reciprocating rotary cvd equipment and application method | |
| CN105951058B (en) | A kind of nano particle space isolation atomic layer deposition apparatus and method based on fluid bed | |
| CN101680092A (en) | Device for the temperature control of the surface temperatures of substrates in a CVD reactor | |
| TWI724974B (en) | Fluid distributing device for a thin-film deposition apparatus, related apparatus and methods | |
| CN112359422A (en) | Semiconductor process chamber and semiconductor processing equipment | |
| CN102985592A (en) | Linear batch chemical vapor deposition system | |
| CN117187785B (en) | Chemical vapor deposition device and method | |
| CN101748377B (en) | Reaction chamber of metal organism chemical deposition equipment | |
| TW202320257A (en) | Showerhead and substrate processing pparatus having same | |
| CN115537777A (en) | Vapor deposition equipment | |
| CN211471545U (en) | Chemical vapor deposition planet tray device | |
| CN110359030A (en) | Reaction chamber and chemical vapor deposition unit | |
| CN206438200U (en) | CVD stove reaction chamber multi-angle feeders | |
| CN109423623B (en) | Uniform gas supply device of vapor deposition furnace and vapor deposition furnace | |
| US3783936A (en) | Method and apparatus for carrying out a heat exchange between a heat carrier medium and a drum reactor | |
| CN114639493A (en) | Water distribution device for passive containment cooling system test equipment | |
| KR20230105121A (en) | Layer deposition apparatus capable of controlling temperature of a multi-stage substrate chamber | |
| JP2979471B2 (en) | Gas reactant supply device | |
| CN220952047U (en) | Processing equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |