CN1170346C - Integral microchip laser with frequency modulation function - Google Patents

Integral microchip laser with frequency modulation function Download PDF

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Publication number
CN1170346C
CN1170346C CNB991253116A CN99125311A CN1170346C CN 1170346 C CN1170346 C CN 1170346C CN B991253116 A CNB991253116 A CN B991253116A CN 99125311 A CN99125311 A CN 99125311A CN 1170346 C CN1170346 C CN 1170346C
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crystal
laser
microplate
nonlinear optical
deielectric
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CN1298217A (en
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黄艺东
陈学元
涂朝阳
罗遵度
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Fujian Institute of Research on the Structure of Matter of CAS
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Fujian Institute of Research on the Structure of Matter of CAS
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Abstract

A laser crystal microchip is grown by epitaxy after a laser crystal microchip is grown by epitaxy or a Q-switched chip is grown by epitaxy on one end surface which is perpendicular to the phase matching direction of frequency multiplication or frequency mixing of a nonlinear optical crystal so as to realize an integrative solid microchip laser device which has the function of frequency modulation and is pumped by semiconductor lasers or other appropriate light sources. Light emission of semiconductor lasers or other light sources can be effectively converted into the laser output of visible and ultraviolet bands.

Description

Integral microchip laser with frequency modulation function
Technical field
The present invention relates to crystalline material and photoelectron technology.
Background technology
Micro-slice laser be a kind of laser crystal thickness below 1 millimeter, the two sides directly plates the miniature laser of the deielectric-coating that satisfies the laser operation condition.Can utilize semiconductor laser to carry out end pumping, beam quality and all relatively poor semiconductor laser of monochromaticjty are transformed into high light beam quality and the good Solid State Laser output of monochromaticjty as pumping source.On this basis, can add Q switched element and nonlinear optical crystal, this solid fundamental wave of laser is transferred Q, frequency multiplication or mixing, obtain the laser output of visible and ultraviolet band.Such device have low pumping threshold, high conversion efficiency, reliable and stable, device is compact, advantage such as easy to use, in fields such as information, environmental protection, traffic, electronics, measurement, medical treatment, scientific researches wide application prospect is arranged.
In order to obtain monochromaticjty laser output preferably, also help improving frequency multiplication or mixing efficiency simultaneously, the thickness that requires the laser crystal microplate even has only tens microns below the hundreds of micron.Result of study shows simultaneously: the activated ion concentration in the crystal increases, and microplate thickness reduces, and (the so-called self-activated laser crystal of this point is as NdAl under the situation of not considering concentration quenching 3(BO 3) 4Crystal can satisfy to a certain extent), laser pumping efficient will improve.All these requires and can do microplate thin as far as possible under the condition of abundant absorptive pumping laser.This brings certain degree of difficulty with regard to the processing of giving crystal micro-chip.
Obtain the laser output of visible and ultraviolet band more with practical value, need carry out frequency multiplication or mixed modulated to the infrared fundamental radiation laser of micro-slice laser, also must add nonlinear optical crystal in laser cavity or outside the chamber, sometimes also will add element or the wafer of transferring Q, this brings difficulty also for the manufacturing of device and reliable and stable running thereof.
List of references is seen J.Zayhowski, Q-switched microchip lasers find real-worldapplication, Laser focus world, Aug.1999,129-136.
Summary of the invention
The present invention designs one and has the semiconductor laser of frequency modulation function or the incorporate solid micro-slice laser of other suitable sources pumping, and semiconductor laser or other light source luminescent are transformed into more short wavelength's laser output such as visible and ultraviolet effectively.Purpose is to overcome the big deficiency of micro-slice laser difficulty of processing, makes every effort to save the complexity that Laser Devices are made, and makes device try one's best compactness and miniaturization to improve operation stability simultaneously, reduces device cost.
The present invention adopts following technical scheme: with the nonlinear optical crystal of determining frequency multiplication or mixing phase matched direction is substrate, epitaxial growth laser crystal microplate on an end face vertical with the phase matched direction.So just with the nonlinear optical crystal in intracavity frequency doubling or the mixing laser device and the two unification of laser crystal, two end faces perpendicular to the phase matched direction at this piece laser and the integrated crystal of nonlinear functions plate the deielectric-coating that is suitable for the respective wavelength laser operation, just become an incorporate micro-slice laser with intracavity frequency doubling or mixing function.
The perhaps first passive Q-adjusted crystal micro-chip of epitaxial growth on non-linear optical crystal material as stated above, further again epitaxial growth laser crystal microplate, this is just with laser crystal, adjusting Q crystal and nonlinear optical crystal three unification, two end faces perpendicular to the phase matched direction at this piece laser, accent Q and the integrated crystal of nonlinear functions plate the deielectric-coating that is suitable for the respective wavelength laser operation, just become an incorporate micro-slice laser with accent Q and frequency multiplication or mixing function.
The integrated crystal of above-mentioned functions can be not yet on end face plated film and directly place a pair of medium diaphragm that satisfies the laser operation condition to constitute micro-slice laser with said function.
The technical program is with Gd xY 1-xAl 3(BO 3) 4, Ca 4Gd xY 1-xO (BO 3) 3, Gd 2xY 2 (1-x)(MoO 4) 3, (wherein x can change to 1 from 0), LaSc 3(BO 3) 4As substrate, extension is with rare earth ion, as Nd Deng nonlinear optical crystal 3+, Er 3+, Pr 3+And Yb 3+Deng, as all or part of replacement of active ions Gd 3+, Y 3+Or La 3+In the integrated device of the isomorphism crystal of ion as the laser crystal microplate preferable effect is arranged.Also can use nonlinear optical crystal LiNbO 3As substrate, epitaxial growth RE 3+: MgO:LiNbO 3Or RE 3+: ZnO:LiNbO 3(RE=Nd, Er, Pr, rare earth ions such as Yb) laser crystal microplate obtains same effect.For using rare earth ion Nd 3+Situation about replacing can first epitaxial growth be mixed Cr before extension laser crystal microplate 4+Passive Q-adjusted isomorphism crystal microchip reach effect to 1.06 microns laser Q-switchings.
Implement the useful effect that technical solution of the present invention has:
1, can nonlinear optical crystal, adjusting Q crystal and laser crystal is integrated, can realize accent Q and frequency multiplication or mixing to fundamental wave of laser.Compare with existing technology, the present invention does not need to place independently a laser crystal microplate, an accent Q wafer and a nonlinear optical crystal, makes device extremely compact, saves the complexity that device is made, and reduces cost, and improves the stability of running simultaneously.The present invention is as long as plate corresponding deielectric-coating at the incorporate crystal end-face of this piece, be one can be by Q, frequency multiplication or the mixing solid state laser of accent that have of semiconductor laser or other suitable sources pumping.Its simplicity and compact degree are much higher than prior art.
2, the present invention adopts the laser crystal microplate of epitaxy growth, adopts the method for bulk-shaped monocrystal section, wear down, polishing to compare with prior art, and is more simple and reliable, saves cost.Can satisfy the requirement of tens microns or thinner laser crystal microplate, this is difficult to accomplish with prior art
The present invention program's implementation now is described in conjunction with the accompanying drawings.
At first nonlinear optical crystal 2 is carried out the orientation cutting according to frequency multiplication or mixing needs, make wherein a pair of end face vertical with required phase matched direction, the thickness of crystal can determine that end area is generally square at millimeter according to concrete material and warbled requirement.At an end face vertical with the phase matched direction, utilize epitaxy to grow the laser crystal microplate 1 that thickness satisfies best pumping effect afterwards, its thickness is generally between 10～500 microns.
After obtaining functional crystal that above-mentioned laser crystal microplate and nonlinear optical crystal be integrated, as shown in Figure 1, as long as on two end faces vertical, plate the deielectric- coating 3 and 4 that is fit to laser and frequency multiplication or mixing running with the phase matched direction, be an incorporate micro-slice laser that is suitable for semiconductor laser or other light source along direction 5 pumpings, along direction 6 output laser with frequency multiplication or mixing function.Also plated film and directly this integrated crystal is placed a pair of suitable plated film laser mirror to constitute a laser not with identical function.
Perhaps earlier at a nonlinear optical crystal end face vertical, utilize epitaxy to grow to satisfy the passive Q-adjusted wafer of q-effect needs (for example can adopt epitaxial growth Cr with the phase matched direction 4+: YAl 3(BO 3) 4As transferring the Q wafer), thickness generally arrives the hundreds of micron tens.Epitaxial growth laser crystal microplate is (as Nd again 3+: YAl 3(BO 3) 4Microplate), as shown in Figure 2.Compare with the laser of accompanying drawing 1, this device is many accent Q wafer 7 possess the Q of accent function, and modes such as plated film, pumping, laser outbound course is all identical.Also can select not plated film and directly this integrated crystal be placed a pair of suitable plated film laser mirror to constitute a laser with identical function.
Description of drawings
Accompanying drawing 1 is a kind of incorporate schematic diagram with frequency multiplication or mixing function micro-slice laser, and wherein 1 is by epitaxially grown laser crystal microplate; The 2nd, end face is along perpendicular to the cutting of the phase matched direction of frequency multiplication or mixing, in epitaxial growth as the nonlinear optical crystal of substrate; The 3rd, the deielectric-coating of pump light incident end face; The 4th, the deielectric-coating of Solid State Laser output end face; The 5th, the pump light input direction; The 6th, the laser outbound course.
Accompanying drawing 2 is a kind of incorporate schematic diagrames with micro-slice laser of transferring Q, frequency multiplication or mixing function, and wherein 1 is by epitaxially grown laser crystal microplate; The 2nd, end face is along perpendicular to the cutting of the phase matched direction of frequency multiplication or mixing, in epitaxial growth as the nonlinear optical crystal of substrate; The 3rd, the deielectric-coating of pump light incident end face; The 4th, the deielectric-coating of Solid State Laser output end face; The 5th, the pump light input direction; The 6th, the laser outbound course; The 7th, by epitaxially grown accent Q wafer.
Embodiment
The present invention program's implementation now is described in conjunction with the accompanying drawings.
Example 1: to Nd 3+1062 nanometers of ion ( 4F 3/2→ 4I 11//2) the fundamental wave of laser frequency multiplication produces 531 nano green laser output.Nonlinear optical crystal YAl 3(BO 3) 4Along I class phase matching angle θ I=30.7 ° of orientations are cut, and determine the size (it is square at millimeter to be generally end area, and thickness is several millimeters square or cylinder) of crystal simultaneously, and the end face polishing is placed on the Nd that contains flux xY 1-xAl 3(BO 3) 4In the antiflux of (x is between 0.01 to 1), utilize YAl 3(BO 3) 4Carry out the liquid phase epitaxial method growth as substrate, obtain the Nd of desired thickness by control growing time and condition at an end face vertical with the phase matched direction xY 1-xAl 3(BO 3) 4Crystal micro-chip.After obtaining functional crystal that above-mentioned laser crystal microplate and nonlinear optical crystal be integrated, end face 3 as shown in Figure 1 plate 807 nanometers (as the semiconductor laser wavelength of pump light) high saturating, at the deielectric-coating of 1062 nanometers and 531 nanometers high anti-(R＞99%), end face 4 plates in 807 nanometers and 1062 nanometers high anti-(R＞99%), at the high saturating deielectric-coating of 531 nanometers.This is an incorporate micro-slice laser with double frequency function that is suitable for 807 Nano semiconductor laser along direction 5 pumpings, along the green laser of direction 6 outputs 531 nano wave lengths.
Example 2: to Nd 3+1338 nanometers of ion ( 4F 3/2→ 4I 13/2) the fundamental wave of laser frequency multiplication produces the output of 669 nano red laser.Nonlinear optical crystal YAl 3(BO 3) 4Along I class phase matching angle θ I=27.0 ° of orientations are cut, and determine the size (it is square at millimeter to be generally end area, and thickness is several millimeters square or cylinder) of crystal simultaneously, and the end face polishing is placed on the Nd that contains flux xY 1-xAl 3(BO 3) 4In the antiflux of (x is between 0.01 to 1), utilize YAl 3(BO 3) 4Carry out the liquid phase epitaxial method growth as substrate, obtain the Nd of desired thickness by control growing time and condition at an end face vertical with the phase matched direction xY 1-xAl 3(BO 3) 4Crystal micro-chip.After obtaining functional crystal that above-mentioned laser crystal microplate and nonlinear optical crystal be integrated, end face 3 as shown in Figure 1 plate 807 nanometers (as the semiconductor laser wavelength of pump light) high saturating, at the deielectric-coating of 1338 nanometers and 669 nanometers high anti-(R＞99%), end face 4 plates in 807 nanometers and 1338 nanometers high anti-(R＞99%), at the high saturating deielectric-coating of 669 nanometers.This is an incorporate micro-slice laser with double frequency function that is suitable for 807 Nano semiconductor laser along direction 5 pumpings, along the red laser of direction 6 outputs 669 nano wave lengths.
Example 3: with Nd 3+1062 nanometers of ion ( 4F 3/2→ 4I 11/2) fundamental wave of laser with produce the output of 458 nanometer blue lasers as 807 Nano semiconductor laser mixing of pump light.Nonlinear optical crystal YAl 3(BO 3) 4Along I class phase matching angle θ I=35.0 ° of orientations are cut, and determine the size (it is square at millimeter to be generally end area, and thickness is several millimeters square or cylinder) of crystal simultaneously, and the end face polishing is placed on the Nd that contains flux xY 1-xAl 3(BO 3) 4In the antiflux of (x is between 0 to 1), utilize YAl 3(BO 3) 4Carry out the liquid phase epitaxial method growth as substrate, obtain the Nd of desired thickness by control growing time and condition at an end face vertical with the phase matched direction xY 1-xAl 3(BO 3) 4Crystal micro-chip.After obtaining functional crystal that above-mentioned laser crystal microplate and nonlinear optical crystal be integrated, end face 3 as shown in Figure 1 plate 807 nanometers (as the semiconductor laser wavelength of pump light) high saturating, at the deielectric-coating of 1062 nanometers and 458 nanometers high anti-(R＞99%), end face 4 plates in 807 nanometers and 1062 nanometers high anti-(R＞99%), at the high saturating deielectric-coating of 458 nanometers.This is an incorporate micro-slice laser with mixing function that is suitable for 807 Nano semiconductor laser along direction 5 pumpings, along the blue laser of direction 6 outputs 458 nano wave lengths.
Example 4: to Nd 3+1062 nanometers of ion ( 4F 3/2→ 4I 11/2) fundamental wave of laser transfer Q after frequency multiplication produce the output of 531 nano green pulse lasers.Nonlinear optical crystal YAl 3(BO 3) 4Along I class phase matching angle θ I=30.7 ° of directed cuttings, the size (it is square at millimeter to be generally end area, and thickness is several millimeters square or cylinder) of definite crystal places the Cr that contains flux earlier after the end face polishing simultaneously 2O 3, Y 2O 3, Al 2O 3, B 2O 3In the antiflux that mixes by a certain percentage with MgO, utilize YAl 3(BO 3) 4Carry out the liquid phase epitaxial method growth as substrate, obtain the Cr of desired thickness (generally arriving the hundreds of micron) by control growing time and condition at an end face vertical tens with the phase matched direction 4+: YAl 3(BO 3) 4Transfer the Q wafer.Place the Nd that contains flux again xY 1-xAl 3(BO 3) 4Carry out the liquid phase epitaxial method growth in the antiflux of (x is between 0.01 to 1), obtain the Nd of desired thickness by control growing time and condition at an end face vertical with the phase matched direction xY 1-xAl 3(BO 3) 4Crystal micro-chip.After obtaining above-mentioned laser crystal microplate, transferring the functional crystal that Q wafer and nonlinear optical crystal be integrated, end face 3 as shown in Figure 2 plate 807 nanometers (as the semiconductor laser wavelength of pump light) high saturating, at the deielectric-coating of 1062 nanometers and 531 nanometers high anti-(R＞99%), end face 4 plates in 807 nanometers and 1062 nanometers high anti-(R＞99%), at the high saturating deielectric-coating of 531 nanometers.This is an incorporate micro-slice laser with accent Q and double frequency function that is suitable for 807 Nano semiconductor laser along direction 5 pumpings, along the green pulse laser of direction 6 outputs 531 nano wave lengths.
Example 5: can utilize other nonlinear optical crystal such as Gd xY 1-xAl 3(BO 3) 4, Ca 4Gd xY 1-xO (BO 3) 3, Gd 2xY 2 (1-x)(MoO 4) 3, (wherein x can change to 1 from 0), LaSc 3(BO 3) 4Deng as substrate, adopt way extension in the above-mentioned example with Nd 3+The all or part of replacement of ion Gd 3+, Y 3+Or La 3+The isomorphism crystal of ion is as the laser crystal microplate; Perhaps with nonlinear optical crystal LiNbO 3As substrate, epitaxial growth Nd 3+: MgO:LiNbO 3Or Nd 3+: ZnO:LiNbO 3The laser crystal microplate.
Example 6: can utilize other rare earth ion such as Er 3+, Pr 3+, Yb 3+Deng the Nd that substitutes in the above-mentioned example 3+Ion carries out the integral microchip laser that has frequency modulation function equally that same or analogous manufacture process obtains being suitable for the light source pumping of other wavelength.These lasers can be exported the laser of other wavelength.
Example 7: above-mentioned all examples all can select not plate deielectric- coating 3 and 4 and directly this integrated crystal is placed a pair of suitable plated film laser mirror to constitute the laser with identical function.

Claims (7)

1. the integral microchip laser that has frequency modulation function, constitute by nonlinear optical crystal, laser crystal microplate and deielectric-coating three parts, it is characterized in that: the laser crystal microplate is formed by nonlinear optical crystal epitaxial growth on an end face vertical with the phase matched direction, and laser crystal microplate and nonlinear optical crystal form an integrated crystal; Plate the deielectric-coating that is suitable for the respective wavelength laser operation at two end faces vertical with the phase matched direction of the integrated crystal of this piece, promptly incident end face plate high saturating to pump light, plate the high saturating and both ends of the surface of frequency conversion light all to the high anti-deielectric-coating of fundamental wave at the outgoing end face.
2. laser as claimed in claim 1 is characterized in that: described laser crystal microplate and described nonlinear optical crystal are the isomorphism crystal.
3. laser as claimed in claim 1 is characterized in that: described nonlinear optical crystal is Gd xY 1-xAl 3(BO 3) 4Or Ca 4Gd xY 1-xO (BO 3) 3Or Gd 2xY 2 (1-x)(MoO 4) 3Or LaSc 3(BO 3) 4Crystal; And described laser crystal microplate is RE 3+: Gd xY 1-xAl 3(BO 3) 4Or RE 3+: Ca 4Gd xY 1-xO (BO 3) 3Or RE 3+: Gd 2xY 2 (1-x)(MoO 4) 3Or RE 3+: LaSc 3(BO 3) 4Crystal, aforementioned x changes to 1, RE from 0 3+Be Nd 3+Or Er 3+Or Pr 3+Or Yb 3+Ion.
4. laser as claimed in claim 1 is characterized in that: described nonlinear optical crystal is LiNbO 3, and described laser crystal microplate is RE 3+: MgO:LiNbO 3Or RE 3+: ZnO:LiNbO 3Crystal, wherein RE 3+Be Nd 3+Or Er 3+Or Pr 3+Or Yb 3+Ion.
5. the integral microchip laser that has frequency modulation function, constitute by nonlinear optical crystal, accent Q wafer, laser crystal microplate and deielectric-coating four parts, it is characterized in that: transfer the wafer of Q to form by the non-linear optical crystal material epitaxial growth, the laser crystal microplate is by the further epitaxial growth of wafer of transferring Q, and nonlinear optical crystal, accent Q wafer and laser crystal microplate form an integrated crystal.
6. laser as claimed in claim 5 is characterized in that: for using rare earth ion Nd 3+Situation about replacing, Cr is mixed in first epitaxial growth before extension laser crystal microplate 4+Passive Q-adjusted isomorphism crystal microchip reach effect to 1.06 microns laser Q-switchings.
7. as claim 1 or 5 described integral microchip lasers, it is characterized in that: plating deielectric-coating and this integrated crystal is directly placed a pair of laser mirror with the characteristic of deielectric-coating described in the claim 1 on the both ends of the surface of integrated crystal with frequency modulation function.
CNB991253116A 1999-11-30 1999-11-30 Integral microchip laser with frequency modulation function Expired - Fee Related CN1170346C (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004007352A2 (en) * 2002-07-12 2004-01-22 The State Of Oregon Acting By And Through The State Board Of Higher Education, On Behalf Of Oregon State University Borate crystals for optical frequency conversion
US8062420B2 (en) 2004-04-14 2011-11-22 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Nonlinear optical crystals and their manufacture and use
US8038904B2 (en) 2004-04-14 2011-10-18 Deep Photonics Corporation Method and structure for non-linear optics
CN100470969C (en) * 2004-05-25 2009-03-18 中国科学院福建物质结构研究所 Microchip laser material and microchip laser device produced therewith
CN1328831C (en) * 2005-02-02 2007-07-25 中国科学院物理研究所 Active and passive Q-adjusted single longitudinal mode laser
CN101404380A (en) * 2008-11-14 2009-04-08 福建华科光电有限公司 Production method for intracavity frequency doubling micro-chip laser device with two-piece structure
CN102306899A (en) * 2011-03-08 2012-01-04 中国科学院福建物质结构研究所 Solid laser capable of detecting CO and CO2
CN103972784B (en) * 2014-04-09 2017-04-05 中国科学院福建物质结构研究所 The thin disk laser of 1.5 to 1.6 micron wavebands of one kind

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