CN116581067B

CN116581067B - Control method of megasonic system based on wet processing of device

Info

Publication number: CN116581067B
Application number: CN202310851216.8A
Authority: CN
Inventors: 咸威
Original assignee: Siansonic Technology Co ltd
Current assignee: Siansonic Technology Co ltd
Priority date: 2023-07-12
Filing date: 2023-07-12
Publication date: 2023-09-22
Anticipated expiration: 2043-07-12
Also published as: CN116581067A

Abstract

The invention provides a control method of a megasonic system based on wet processing of devices, which relates to the technical field of semiconductor manufacturing, and comprises the following steps: the power amplification device comprises a control unit, a power supply unit, a power amplification unit and a megasonic emission unit, wherein the power supply unit, the power amplification unit and the megasonic emission unit are sequentially connected in series, the input end of the control unit is connected with the output end of the power amplification unit, and the output end of the control unit is respectively connected with the control end of the power supply unit and the control end of the power amplification unit; the method comprises the following steps: collecting a voltage signal and a current signal output by a power amplifying unit; calculating a target equivalent impedance of the megasonic emission unit based on the voltage signal and the current signal; determining liquid coupling information based on the target equivalent impedance, the liquid coupling information being used to represent a degree of liquid coupling between the symptom acoustic emission unit and the wet processing platform; the device is wet processed at the wet processing platform by controlling the power supply unit and the power amplification unit based on the liquid coupling information. The invention effectively improves the processing efficiency of the megasonic wave on the device.

Description

Control method of megasonic system based on wet processing of device

Technical Field

The invention relates to the technical field of semiconductor manufacturing, in particular to a control method of a megasonic system based on wet processing of devices.

Background

When ultrasonic wave with the frequency higher than 400kHz propagates in the liquid, an extremely thin acoustic boundary layer with a very large speed gradient can be formed near the surface of the cleaned part, impurity particles of the acoustic boundary layer fall off from the surface of the device under the oscillation action of the megahertz frequency of the liquid, micron and submicron-level impurity particles on the surface of the device can be cleaned, and an ultra-precise cleaning process is realized. In addition, the surface of the cleaned part is not damaged due to the extremely low cavitation effect in the high-frequency ultrasonic cleaning process, and the phenomena of corrosion or damage and the like caused after the cleaning of the precise components can be effectively solved. Therefore, megasonic devices capable of emitting megasonic levels are widely used in the semiconductor manufacturing field and can play an important role in critical wet processing processes such as chemical mechanical polishing, development, photoresist removal, metal stripping, etching, and the like, in addition to cleaning. The megasonic system has been a key device in semiconductor wet processing.

At present, a megasonic system for semiconductor wet processing transmits megasonic energy to components such as a wafer through coupling conductive liquid (such as pure water, etc.), so as to perform processes such as cleaning and etching on the components by using megasonic.

However, there may be a situation in which bubbles accumulate in the conductive liquid or the flow rate of the coupling conductive liquid is too low, which results in difficulty in effectively transmitting megasonic energy to the component, and thus in low efficiency of processing the component by using megasonic waves.

Disclosure of Invention

The invention provides a control method of a megasonic system based on wet processing of a device, which is used for solving the problems of low transmission efficiency of megasonic waves, low processing efficiency of the device by using the megasonic waves and poor robustness of the megasonic system in the prior art.

The invention provides a control method of a megasonic system based on wet processing of devices, which comprises the following steps: the power amplification device comprises a control unit, a power supply unit, a power amplification unit and a megasonic emission unit, wherein the power supply unit, the power amplification unit and the megasonic emission unit are sequentially connected in series, the input end of the control unit is connected with the output end of the power amplification unit, and the output end of the control unit is respectively connected with the control end of the power supply unit and the control end of the power amplification unit;

The method comprises the following steps:

collecting a voltage signal and a current signal output by the power amplification unit;

calculating a target equivalent impedance of the megasonic emission unit based on the voltage signal and the current signal;

determining liquid coupling information based on the target equivalent impedance; wherein the liquid coupling information is used to characterize the degree of liquid coupling between the megasonic emission unit and the wet processing platform;

and performing wet processing on the wet processing platform by controlling the power supply unit and the power amplification unit based on the liquid coupling information.

According to the control method of the megasonic system based on the wet processing of the device, the method for determining the liquid coupling information based on the target equivalent impedance comprises the following steps:

in a fixed frequency mode, determining the liquid coupling information based on the target equivalent impedance and a preset reference equivalent impedance;

in the sweep frequency mode, determining the liquid coupling information based on a first change interval of the target equivalent impedance and a preset second change interval of the reference equivalent impedance;

the reference equivalent impedance comprises at least one of a first equivalent impedance and a second equivalent impedance, wherein the first equivalent impedance is the equivalent impedance of the megasonic system under no-load condition, and the second equivalent impedance is the equivalent impedance of the megasonic system under full-load condition.

According to the control method of the megasonic system based on device wet processing provided by the invention, the liquid coupling information is determined based on the target equivalent impedance and a preset reference equivalent impedance, and the control method comprises the following steps:

calculating a first ratio between the target equivalent impedance and the first equivalent impedance as the liquid coupling information, in a case where the reference equivalent impedance includes the first equivalent impedance;

in the case where the reference equivalent impedance includes the second equivalent impedance, a second ratio between the target equivalent impedance and the second equivalent impedance is calculated as the liquid coupling information.

According to the control method of the megasonic system based on device wet processing provided by the invention, the liquid coupling information is determined based on the target equivalent impedance and the preset reference equivalent impedance, and the control method further comprises the following steps:

in the case where the reference equivalent impedance includes the first equivalent impedance and the second equivalent impedance, the liquid coupling information is determined based on at least one of:

based on the target equivalent impedance Z3, the first equivalent impedance Z1, and the second equivalent impedance Z2, a liquid coupling value X is calculated as the liquid coupling information using formula (1): x= (Z3-Z1)/(Z2-Z1) (1);

Calculating a liquid coupling value X as the liquid coupling information using formula (2) based on the target equivalent impedance Z3, the first equivalent impedance Z1, and the second equivalent impedance Z2: x=1- (Z3-Z1)/(Z2-Z1) (2);

determining the liquid coupling information based on the second ratio and the third ratio; wherein the third ratio is the ratio between the first equivalent impedance and the second equivalent impedance;

determining the liquid coupling information based on the first ratio and the fourth ratio; wherein the fourth ratio is the ratio between the second equivalent impedance and the first equivalent impedance.

According to the control method of the megasonic system based on device wet processing provided by the invention, the liquid coupling information is determined based on the first change interval of the target equivalent impedance and the preset second change interval of the reference equivalent impedance, and the method comprises the following steps:

determining the liquid coupling information based on an upper limit value and a lower limit value corresponding to the first variation section and an upper limit value and a lower limit value corresponding to the first equivalent impedance, in a case where the reference equivalent impedance includes the first equivalent impedance;

Determining the liquid coupling information based on an upper limit value and a lower limit value corresponding to the first variation interval and an upper limit value and a lower limit value corresponding to the second equivalent impedance when the reference equivalent impedance includes the second equivalent impedance;

and determining the liquid coupling information based on an upper limit value and a lower limit value corresponding to the first variation section, an upper limit value and a lower limit value corresponding to the first equivalent impedance, and an upper limit value and a lower limit value corresponding to the second equivalent impedance, in a case where the reference equivalent impedance includes the first equivalent impedance and the second equivalent impedance.

According to the control method of the megasonic system based on the wet processing of the device, the liquid coupling information comprises a liquid coupling value, and the wet processing of the device is carried out on the wet processing platform by controlling the power supply unit and the power amplification unit based on the liquid coupling information, and the control method comprises the following steps:

performing device wet processing on the wet processing platform by controlling the power supply unit and the power amplification unit under the condition that the liquid coupling value is within a preset first threshold value range;

The method further comprises the steps of:

in the event that the liquid coupling value is outside the first threshold range, performing at least one of:

prohibiting wet processing of the device at the wet processing platform;

and outputting alarm information.

According to the control method of the megasonic system based on the wet processing of the device, the megasonic unit comprises at least two transducers, and the method further comprises:

and in the frequency sweep mode, determining a frequency sweep range corresponding to each transducer based on the center frequency of each transducer, and sweeping each transducer according to the frequency sweep range corresponding to each transducer.

According to the control method of the megasonic system based on the wet processing of the device, the power supply unit comprises a direct current power supply unit, and the power amplification unit comprises at least one inversion module.

According to the control method of the megasonic system based on the wet processing of the device, when the power amplification unit comprises at least two inversion modules, the inversion modules are connected in parallel.

According to the control method of the megasonic system based on the wet processing of the device, each inversion module comprises at least one of a full-bridge inverter and a half-bridge inverter.

According to the control method of the megasonic system based on the wet processing of the device, the megasonic system comprises at least one of a groove-type megasonic system, a fitting-type megasonic system and a spraying-type megasonic system.

The invention also provides a control device of the megasonic system based on the wet processing of the device, the megasonic system comprises: the power amplification device comprises a control unit, a power supply unit, a power amplification unit and a megasonic emission unit, wherein the power supply unit, the power amplification unit and the megasonic emission unit are sequentially connected in series, the input end of the control unit is connected with the output end of the power amplification unit, and the output end of the control unit is respectively connected with the control end of the power supply unit and the control end of the power amplification unit;

the device comprises:

the acquisition module is used for acquiring the voltage signal and the current signal output by the power amplification unit;

a calculation module for calculating a target equivalent impedance of the megasonic emission unit based on the voltage signal and the current signal;

a determining module for determining liquid coupling information based on the target equivalent impedance; wherein the liquid coupling information is used to characterize the degree of liquid coupling between the megasonic emission unit and the wet processing platform;

And the processing module is used for carrying out wet processing on the device on the wet processing platform by controlling the power supply unit and the power amplification unit based on the liquid coupling information.

The invention also provides an electronic device, which comprises a memory, a processor and a computer program stored on the memory and capable of running on the processor, wherein the processor realizes the control method of the megasonic system based on the wet processing of the device when executing the program.

The present invention also provides a non-transitory computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements a method of controlling a megasonic system based on wet processing of devices as described in any of the above.

The present invention also provides a computer program product comprising a computer program which when executed by a processor implements a method of controlling a megasonic system based on wet processing of devices as described in any one of the above.

The control method of the megasonic system based on the wet processing of the device is applied to the megasonic system, wherein the control unit firstly collects voltage signals and current signals output by the power amplification unit, then calculates target equivalent impedance of the megasonic emission unit based on the voltage signals and the current signals, further determines liquid coupling information based on the target equivalent impedance to represent the liquid coupling degree between the megasonic emission unit and the wet processing platform, and then performs the wet processing of the device on the wet processing platform by controlling the power supply unit and the power amplification unit in the megasonic system based on the liquid coupling information. According to the invention, the magnitude of the reflected wave can be measured by calculating the change of the equivalent impedance of the megasonic emission unit, so that the liquid coupling degree (such as the problem of bubble accumulation and the like) between the megasonic emission unit and the wet processing platform is reflected, the device wet processing is performed on the wet processing platform by referring to the liquid coupling degree, for example, the device wet processing can be performed on the wet processing platform when the liquid coupling degree is higher, the transmission efficiency of the megasonic wave is effectively improved, the processing efficiency of the megasonic wave on the device is further improved, in addition, the situation that holes appear on the surface of the megasonic vibrator, and then the megasonic vibrator is damaged can be avoided, and the robustness of the megasonic wave system is effectively improved.

Drawings

In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic diagram of a megasonic system in a control method of a megasonic system based on wet processing of devices according to the present invention;

fig. 2 is a flow chart of a control method of a megasonic system based on wet processing of devices provided by the invention;

fig. 3 is a schematic diagram of an equivalent circuit of an ideal reflection-free state in a control method of a megasonic system based on wet processing of devices provided by the present invention;

fig. 4 is a schematic diagram of an equivalent circuit of a reflected wave state in a control method of a megasonic system based on wet processing of devices according to the present invention;

fig. 5 is a schematic diagram of a second configuration of a megasonic system in a control method of a megasonic system based on wet processing of devices according to the present invention;

fig. 6 is a schematic diagram of a third embodiment of a megasonic system in a control method of a megasonic system based on wet processing of devices according to the present invention;

Fig. 7 is a schematic diagram of a tank megasonic system provided by the invention in a normal state;

fig. 8 is a schematic diagram of a tank megasonic system provided by the present invention in a low water level state;

fig. 9 is a schematic diagram of a tank megasonic system provided by the present invention in a bubble accumulation state;

fig. 10 is a schematic of a wet process of a conformable megasonic system provided by the present invention;

fig. 11 is a schematic diagram of the conformable megasonic system provided by the present invention in a normal state;

fig. 12 is a schematic illustration of a conformable megasonic system provided by the present invention in a liquid underfill condition;

fig. 13 is a schematic diagram of a conformable megasonic system provided by the present invention in an unvented liquid state;

fig. 14 is a schematic diagram of a spray megasonic system according to the present invention in a normal state;

fig. 15 is a schematic view of a spray megasonic system according to the present invention in a bubble accumulation state;

fig. 16 is a schematic diagram of a spray megasonic system provided by the invention in a liquid flow deficient state;

FIG. 17 is a schematic diagram of waveforms of a conventional frequency sweep method;

FIG. 18 is a second waveform diagram of a conventional frequency sweep;

fig. 19 is a schematic waveform diagram of a sweep frequency mode in a control method of a megasonic system based on wet processing of devices according to the present invention;

Fig. 20 is a second waveform diagram of a sweep mode in a control method of a megasonic system based on wet processing of devices according to the present invention;

fig. 21 is a schematic diagram of the control device of the megasonic system based on wet processing of devices according to the present invention;

fig. 22 is a schematic structural diagram of an electronic device provided by the present invention.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.

The control method of the megasonic system based on the wet process of the device of the present invention is described below with reference to the accompanying drawings.

Fig. 1 is a schematic structural diagram of a megasonic system in a control method of a megasonic system based on wet processing of devices according to the present invention, and as shown in fig. 1, the megasonic system 100 includes: a control unit 101 and a power supply unit 102, a power amplification unit 103 and a megasonic emission unit 104 connected in series in this order.

The circuit connection structure is specifically as follows:

an input end of the control unit 101 is connected to an output end of the power amplifying unit 103, and an output end of the control unit 101 is connected to a control end of the power supply unit 102 and a control end of the power amplifying unit 103, respectively.

Fig. 2 is a schematic flow chart of a control method of a megasonic system based on wet processing of devices according to the present invention, as shown in fig. 2, the method includes steps 201 to 204; wherein:

step 201, collecting a voltage signal and a current signal output by a power amplifying unit.

Step 202, calculating the target equivalent impedance of the megasonic emission unit based on the voltage signal and the current signal.

Step 203, determining liquid coupling information based on the target equivalent impedance; wherein the liquid coupling information is used to indicate a degree of liquid coupling between the symptom acoustic emission unit and the wet processing platform.

Step 204, performing wet processing on the device on the wet processing platform by controlling the power supply unit and the power amplification unit based on the liquid coupling information.

In the related art, a megasonic system for wet processing of semiconductors transmits megasonic energy to components such as wafers through coupling of conductive liquid (e.g., pure water) to perform wet processing of the components such as cleaning and etching of the components using megasonic.

In view of the above problems, the present invention has found that: when the megasonic emission unit emits sound waves into the coupling liquid, if the sound waves encounter an object or the interface between the liquid and the air, reflection occurs, and after the reflected waves return to the transducer in the megasonic emission unit, the transducer generates voltage with the same frequency, at this time, the megasonic emission unit is equivalent to a voltage source which is connected in series, and the equivalent impedance of the megasonic emission unit can change when seen from the end of the megasonic emission unit, for example, the voltage of the transducer excited by the reflected waves is opposite to the excitation voltage of the transducer near the resonance frequency point, so that the current flowing through the transducer can be reduced, and the equivalent impedance is increased.

Specifically, fig. 3 Is a schematic diagram of an equivalent circuit of an ideal no-reflected wave state in the control method of the megasonic system based on the wet process of the device according to the present invention, and as shown in fig. 3, a megasonic generator in the megasonic system may include a power supply unit, a power amplifying unit, and a control unit, and the megasonic generator may be equivalent to a voltage source Us, and form a loop with the megasonic emitting unit, and may be considered that the current on the loop Is at this time.

Fig. 4 Is a schematic diagram of an equivalent circuit of a reflected wave state in the control method of the megasonic system based on wet processing of a device according to the present invention, as shown in fig. 4, when the reflected wave Is in the vicinity of a resonant frequency, after the reflected wave returns to a transducer in a megasonic emission unit, the transducer generates a voltage with the same frequency, and the megasonic emission unit Is equivalent to and connected in series with a voltage source UL, and the current on the loop Is 'and, because the voltage source UL and the voltage source Us are connected in opposite directions, the total voltage Is the difference between the two voltage sources, and Is' Is smaller than Is, so that the equivalent impedance of the circuit can be considered to be increased, and the stronger the reflected wave, the greater the equivalent impedance.

The stronger the reflected wave is, the larger the equivalent impedance is, and the phenomenon that the megasonic system works at the first resonance point is, in addition, the megasonic system can also work at the second resonance point, and the stronger the reflected wave is, the smaller the equivalent impedance is.

The embodiment of the invention utilizes the discovery that the control unit in the megasonic system can collect the voltage signal and the current signal output by the power amplification unit, calculate the target equivalent impedance of the megasonic unit based on the voltage signal and the current signal, determine the liquid coupling information based on the target equivalent impedance so as to represent the liquid coupling degree between the megasonic unit and the wet processing platform, and perform the wet processing of the device on the wet processing platform by controlling the power supply unit and the power amplification unit in the megasonic system based on the liquid coupling information.

It should be noted that the wet processing platform is different for different megasonic systems. For example, for a tank megasonic system, the wet processing platform may refer to the inner tank of the tank megasonic system relative to the megasonic unit disposed outside the outer tank; for a patch megasonic system, a wet processing platform may refer to a device to be wet processed, such as a wafer to be cleaned; for a showering megasonic system, the wet processing platform may refer to the nozzle orifice of the showering megasonic system.

Alternatively, the device wet processing may be performed on a wet processing platform, for example, cleaning, polishing, developing, photoresist removal, metal stripping, etching, etc. operations may be performed on the device to be wet processed.

Alternatively, the voltage signal may include a phase difference and an amplitude of the voltage, or an average value, an effective value, or the like; the current signal may include a phase difference and an amplitude of the current, or an average value, an effective value, or the like.

Alternatively, the frequency of the megasonic generator or megasonic emission unit is 300kHz to 20MHz.

In the control method of the megasonic system based on the device wet processing provided by the embodiment of the invention, the size of the reflected wave can be measured by calculating the change of the equivalent impedance of the megasonic emission unit, so that the liquid coupling degree (such as the problem of bubble accumulation and the like) between the megasonic emission unit and the wet processing platform is reflected, the device wet processing is performed on the wet processing platform by referring to the liquid coupling degree, for example, the device wet processing can be performed on the wet processing platform when the liquid coupling degree is higher, the transmission efficiency of the megasonic is effectively improved, the processing efficiency of the megasonic on the device is further improved, in addition, the situation that holes appear on the surface of the megasonic vibrator, and the megasonic vibrator is damaged is avoided, and the robustness of the megasonic system is effectively improved.

Alternatively, fig. 5 is a second schematic structural diagram of the megasonic system in the control method of the megasonic system based on wet device processing according to the present invention, and as shown in fig. 5, the power supply unit may include a dc power supply unit, and the power amplifying unit may include at least one inverter module.

In the related art, a complete set of megasonic systems for semiconductor wet processing generally include megasonic units, megasonic generators, and other mechanical and automated structures.

The megasonic emission unit can be formed by attaching one or more piezoelectric ceramic transducers to an oscillator, for example, for a patch megasonic system, the megasonic emission unit is opposite to a device to be wet processed, and coupling liquid is filled between the megasonic emission unit and a semiconductor device (such as a wafer) or an optical device to be wet processed, and the coupling liquid is used as a coupling medium for transmitting megasonic energy and can also be used as a treatment liquid for treating the device to be wet processed. The megasonic generator is a power supply of the megasonic emission unit and provides matched high-frequency electric signal driving and controlling for the megasonic emission unit. Megasonic systems typically have frequencies between 400kHz and 3000kHz with a maximum power of up to several kw.

A typical megasonic generator is a radio frequency power supply based on the principle of a power amplifier that includes a signal generating system, a power amplifying system, and an impedance matching network. The output impedance of a radio frequency power supply typically needs to be matched to the load impedance because if the load impedance is not matched to the output impedance this can cause problems such as excessive reflected power, inefficiency in the power supply, and even damage to the power supply itself. Therefore, the megasonic emission units with different specifications and even the megasonic emission units with the same specification and different batches need to be subjected to independent impedance matching design, which makes practical application inconvenient and has higher cost.

In the embodiment of the invention, compared with the case that a radio frequency power supply based on the principle of a power amplifier is adopted as a megasonic generator in the related art, for megasonic emission units of different specifications and even for megasonic emission units of the same specification and different batches, separate impedance matching designs are required, so that the practical application is very inconvenient, and the cost of each item is higher.

It should be noted that, the scheme of the inversion module is different from the existing radio frequency power supply:

the radio frequency power supply adopts the principle of a power amplifier, and outputs power by amplifying a signal through a transistor amplifying circuit (a power transistor such as a MOSFET is in an amplifying state), wherein the power size is adjusted by means of the amplification factor of the amplifying circuit or the signal size (voltage), and the power supply unit is also required, but the voltage of general direct current power supply is fixed; since the load impedance properties of the transistor amplification circuit directly influence the state of the transistor amplification circuit, this impedance matching is very important for the transistor amplification circuit.

The transistor of the high-frequency inversion module of the invention, such as MOSFET, is not operated in the amplifying state (in the saturation region or the cut-off region, the switch state is realized), the output power of the inversion module is regulated by regulating the output voltage of the direct current power supply unit (generally a DC-DC converter), and the signal generating part is only responsible for frequency (the signal source in the radio frequency amplifying circuit is simultaneously responsible for frequency and power). After voltage and current signals are acquired, output power (namely voltage multiplied by current) is calculated, and then a command is sent to the direct current power supply unit by the control unit according to the comparison between the actual output power and the reference power, so that the voltage of the direct current power supply unit is regulated to control the output power of the inversion module, and finally, the required power is achieved.

Optionally, each of the inverter modules may include at least one of a full bridge inverter and a half bridge inverter.

Specifically, for the case of multiple inverter modules, all the inverter modules may be implemented by full-bridge inverters, all the inverter modules may be implemented by half-bridge inverters, or one part of the inverter modules may be implemented by full-bridge inverters, and the other part of the inverter modules may be implemented by half-bridge inverters.

Optionally, fig. 6 is a third schematic structural diagram of the megasonic system in the control method of the megasonic system based on wet device processing according to the present invention, as shown in fig. 6, three inversion modules are taken as an example, and each inversion module is connected to three transducers for illustration, and the control unit is not shown temporarily.

In the case where the power amplifying unit includes at least two inverter modules, the inverter modules may be connected in parallel.

Specifically, the invention can set parallel connected inverter modules as power amplifying units, each inverter module can be used for connecting at least one transducer in the megasonic emission unit, the parallel connected inverter modules can send high-frequency electric signals to each transducer in parallel, and then the transducers convert the electric signals into sonic signals for emission, so that the power of a single inverter module is reduced, the robustness of the inverter modules is improved, and the working stability of the megasonic system can be effectively improved.

For example, the total power of the megasonic system is 2400W, and if 4 inverter modules are connected in parallel, the power of a single inverter module is 600W, which reduces the cost and technical difficulty.

In addition, the main significance of parallel connection of the plurality of inverter modules is to reduce the cost, or the scheme of the inverter modules can be realized under the high-frequency and high-power condition, so that the cost is reduced, and the problem of complex impedance matching is not needed to be considered too much. It is also advantageous that the inverter module power source is more efficient than the rf power amplifying power source. The rf power supply has a general efficiency of at most 70% even in the case of an accurate impedance matching load, and the inverter module can reach more than 90%. In summary, compared with the traditional radio frequency power supply (power amplification), the invention has the advantages that the inverter module is used: the cost is low; low complexity (high robustness), no complex impedance matching is required; the power supply efficiency is high.

It should also be noted that, by combining multiple high-frequency inverters in parallel, a high-power high-frequency megasonic generator can be realized, which is lower in cost than the radio-frequency power supply of the traditional power amplifier principle, and has stronger compatibility to megasonic emission units without requiring a complex impedance matching network.

An implementation of determining the liquid coupling information based on the target equivalent impedance is described below.

Optionally, the implementation manner of determining the liquid coupling information based on the target equivalent impedance may include:

In some embodiments, the megasonic system is in a fully loaded condition, which is understood to mean that the megasonic system and the wet processing platform are in an "optimal operating state" or "fully coupled state", but the fully loaded condition of the present invention is not limited to an extreme ideal condition, and is within the tolerance of the error.

Similarly, in some embodiments, the megasonic system is in an unloaded condition, which is understood to mean that the megasonic system and the wet processing platform are in a "completely liquid-free state", i.e., there is no liquid between the megasonic unit and the wet processing platform, but this is not necessarily an extreme ideal situation that is not limiting of the invention, and that there may be a small amount of coupling liquid between the megasonic unit and the wet processing platform, within the tolerance of the error, for example, but the coupling liquid does not communicate between the megasonic unit and the wet processing platform.

Specifically, the megasonic system may be in a fixed frequency mode or a sweep frequency mode, which corresponds to a certain difference in implementation manner of determining the liquid coupling information, specifically in the following two cases:

in case 1, in the fixed frequency mode, that is, in a frequency point, the equivalent impedance of the megasonic emission unit is also a value, so that the liquid coupling information can be determined based on the target equivalent impedance and the preset reference equivalent impedance.

Optionally, the determining the implementation manner of the liquid coupling information based on the target equivalent impedance and the preset reference equivalent impedance may include:

Optionally, the implementation manner of determining the liquid coupling information based on the target equivalent impedance and a preset reference equivalent impedance may further include:

a) Based on the target equivalent impedance Z3, the first equivalent impedance Z1, and the second equivalent impedance Z2, a liquid coupling value X is calculated as the liquid coupling information using formula (1): x= (Z3-Z1)/(Z2-Z1) (1);

b) Calculating a liquid coupling value X as the liquid coupling information using formula (2) based on the target equivalent impedance Z3, the first equivalent impedance Z1, and the second equivalent impedance Z2: x=1- (Z3-Z1)/(Z2-Z1) (2);

c) Determining the liquid coupling information based on the second ratio and the third ratio; wherein the third ratio is the ratio between the first equivalent impedance and the second equivalent impedance;

d) Determining the liquid coupling information based on the first ratio and the fourth ratio; wherein the fourth ratio is the ratio between the second equivalent impedance and the first equivalent impedance.

Specifically, the implementation manner of determining the liquid coupling information based on the target equivalent impedance and the reference equivalent impedance may be divided into the following three cases based on different reference equivalent impedances:

a. in the case where the reference equivalent impedance includes only the first equivalent impedance (no load entirely), a first ratio between the target equivalent impedance and the first equivalent impedance is calculated as the liquid coupling information.

In particular, the equivalent impedance value Z1 (first equivalent impedance) for a completely empty megasonic emission unit (which can be understood to be the complete absence of coupling liquid between the megasonic emission unit and the wet processing platform) can be calculated and recorded only.

And then calculating the ratio Z3 (target equivalent impedance) between the voltage signal and the current signal in real time, comparing the ratio with Z1 to obtain a first ratio, and determining the current liquid coupling degree according to the first ratio.

b. In the case where the reference equivalent impedance includes only the second equivalent impedance (full load), a second ratio between the target equivalent impedance and the second equivalent impedance is calculated as the liquid coupling information.

In particular, only the equivalent impedance value Z2 (second equivalent impedance) when the megasonic emission unit is fully loaded (which can be understood to be the complete filling of the coupling liquid between the megasonic emission unit and the wet processing platform) can be calculated and recorded.

And calculating the ratio Z3 between the voltage signal and the current signal in real time, comparing the ratio with Z2 to obtain a second ratio, and determining the current liquid coupling degree according to the second ratio.

c. In the case where the reference equivalent impedance includes both the first equivalent impedance and the second equivalent impedance, the liquid coupling information can be determined by a plurality of operations.

Specifically, equivalent impedance values for the megasonic emission unit at full idle and full load are calculated and recorded as Z1 and Z2, respectively.

And calculating the ratio Z3 of the voltage signal and the current signal in real time, and comparing with Z1 and Z2 simultaneously.

For example, by comparing (Z3-Z1)/(Z2-Z1), the greater the value is to indicate a better coupling effect, which can be understood as a representation of the transmit power ratio, and a value equal to 1 (100%) indicates that full coupling is achieved, i.e., 100% of the transmit power is delivered.

It should be noted that (Z3-Z1)/(Z2-Z1) may be greater than 1, for example, when bubbles accumulate at the bottom of the inner tank of the tank megasonic system or the wall thickness of the bottom of the inner tank is not matched, and the reflected wave may be greater than in the full-load state, which may be referred to as an "overcoupling" state. In this case, the transmission power is greater than 100%, which may also represent an abnormal state, and wet processing is prohibited or alarm information is sent out.

In practical application, a coincidence interval, such as 100% ± 10%, i.e. 90% -110%, is set, and the coincidence state is judged when the coincidence interval is within 90% -110%, so that the device can work normally. If the coupling failure exceeds the coincidence interval, the coupling failure is judged, and the operation can be alarmed or stopped.

This comparison can be done in a number of ways, such as by comparing in turn 1- (Z3-Z1)/(Z2-Z1), which can be understood as a representation of reflected power, the smaller the value, which indicates that the lower the reflected power, and the 0 value, which indicates that all the energy is transferred.

Further alternatively, a comparison of Z3/Z2 and Z1/Z2, a comparison of Z3/Z1 and Z2/Z1, or the like is performed. In practice, as long as Z3 refers to both the values of Z1 and Z2, any way can be found to measure the degree of liquid coupling of the megasonic emission unit, and embodiments of the present invention are not limited.

It should be noted that, when the reference equivalent impedance includes only the first equivalent impedance or the second equivalent impedance, it may be difficult to determine whether the first ratio or the second ratio is the same, for example, the second ratio is 0.9, that is, 90% of the full-load impedance is reached, but it is possible that the impedance of the megasonic system when the megasonic system is unloaded is 85% of the full-load impedance, which may result in that the megasonic system cannot be in the preferred state even if the full-load impedance is 90%, and compared with the case that the reference equivalent impedance includes only the first equivalent impedance or the second equivalent impedance, the present invention determines the liquid coupling information by referring to both the first equivalent impedance and the second equivalent impedance, and can effectively determine whether the liquid coupling information is the same or the range, so that the megasonic system is in the preferred state, and the device can be wet processed under the condition that the megasonic system is in the preferred state based on the liquid coupling information.

In case 2, in the sweep mode, since the frequency is changed in one interval, the equivalent impedance of the megasonic emission unit is also changed in one interval, and the liquid coupling information can be determined based on the first change interval of the target equivalent impedance and the preset second change interval of the reference equivalent impedance.

Optionally, the determining the implementation manner of the liquid coupling information based on the first variation interval of the target equivalent impedance and the second variation interval of the preset reference equivalent impedance may include:

1) And determining the liquid coupling information based on an upper limit value and a lower limit value corresponding to the first variation section and an upper limit value and a lower limit value corresponding to the first equivalent impedance when the reference equivalent impedance includes the first equivalent impedance.

2) And determining the liquid coupling information based on an upper limit value and a lower limit value corresponding to the first variation interval and an upper limit value and a lower limit value corresponding to the second equivalent impedance when the reference equivalent impedance includes the second equivalent impedance.

3) And determining the liquid coupling information based on an upper limit value and a lower limit value corresponding to the first variation section, an upper limit value and a lower limit value corresponding to the first equivalent impedance, and an upper limit value and a lower limit value corresponding to the second equivalent impedance, in a case where the reference equivalent impedance includes the first equivalent impedance and the second equivalent impedance.

Specifically, in one sweep period, the equivalent impedance value variation intervals of the megasonic emission unit when the megasonic emission unit is completely unloaded and completely loaded can be calculated and recorded, which are respectively an upper limit value (Z11) to a lower limit value (Z12) corresponding to the first equivalent impedance, and an upper limit value (Z21) to a lower limit value (Z22) corresponding to the second equivalent impedance.

And then calculating the interval of the ratio between the voltage signal and the current signal in real time, namely, the upper limit value (Z31) to the lower limit value (Z32) corresponding to the first change interval, and simultaneously comparing with Z11 to Z12 and Z21 to Z22.

For example, the average value of each impedance interval may be taken, or an effective value may be taken, where taking the average value as an example, where z13= (z12+z11)/2, z23= (z22+z21)/2, z33= (z32+z31)/2, and then calculating (z33—z13)/(Z23-Z13) is performed, where the larger the value is, the better the coupling effect is, and the value is understood as a representation of the transmit power ratio, and when the value is equal to 1 (100%), the full coupling state is reached, that is, the transmit power is 100%, and all megasonic energy is transmitted.

In practical application, a coincidence value, for example, 0.9, is set, and if the coincidence value is greater than or equal to 0.9, the coincidence state is judged, so that the device can work. If the coupling failure is lower than the coincidence value, the coupling failure is judged, and the alarm or the stop of the work can be realized.

The reference equivalent impedance includes only the first equivalent impedance and the reference equivalent impedance includes only the second equivalent impedance, and the interval and the average value, the effective value, and the like of the interval are used instead of a single value at a fixed frequency.

It should be emphasized that the embodiment of the present invention provides calculating the equivalent impedance, rather than directly detecting the current magnitude, and determining the coupling condition according to the current magnitude change, which is due to: the megasonic emission units typically have different currents at different powers, and merely looking at the change in current does not determine well whether the power is being adjusted or the coupling is changing.

Optionally, the liquid coupling information includes a liquid coupling value, and an implementation manner of performing device wet processing on the wet processing platform by controlling the power supply unit and the power amplifying unit based on the liquid coupling information may include:

the method further comprises the steps of:

1) Prohibiting wet processing of the device at the wet processing platform; 2) And outputting alarm information.

Specifically, in the case that the liquid coupling value included in the liquid coupling information is within the preset first threshold range, it can be considered that the liquid coupling degree meets the requirement at this time, so that the device wet processing can be performed on the wet processing platform by controlling the power supply unit and the power amplification unit; under the condition that the liquid coupling value is out of the first threshold value range, the liquid coupling is considered to be invalid at the moment, and if the device is subjected to wet processing, the processing efficiency is low, and the megasonic vibrator is easy to damage, so that the wet processing of the device on a wet processing platform can be forbidden, and alarm information can be output to prompt the liquid coupling to be invalid.

Optionally, the liquid coupling value is within a preset first threshold range, which may be that the liquid coupling value is greater than or equal to a certain threshold, and the liquid coupling value is outside the first threshold range, which may be that the liquid coupling value is less than a certain threshold.

Optionally, the megasonic system includes at least one of a tank megasonic system, a conformable megasonic system, and a spray megasonic system.

Specifically, tank megasonic systems: the megasonic emission unit is arranged at the bottom of the outer tank, an inner tank is arranged in the outer tank, the bottom of the inner tank is opposite to the emitting surface of the megasonic emission unit, coupling liquid is filled between the bottom of the inner tank and the emitting surface of the megasonic emission unit, and a device to be subjected to wet treatment is arranged in the inner tank.

Laminating megasonic system: the emitting surface of the megasonic emission unit is flushed towards the surface of the device to be wet treated, and the gap between the emitting surface and the surface is filled with coupling liquid.

Spray megasonic system: the megasonic emission unit is encapsulated in a nozzle structure with a coupling liquid filled between the emitting surface of the megasonic emission unit and the nozzle structure.

The three types of megasonic emission units are each composed of one or more piezoelectric transducers and an oscillating layer. One or more piezoelectric transducers are attached to the oscillation layer, the piezoelectric transducers generate high-frequency vibration and then transmit the high-frequency vibration to the oscillation layer, and the oscillation layer transmits high-frequency ultrasonic waves (megasonic waves) to a device to be subjected to wet treatment through coupling liquid.

Specifically, megasonic systems for semiconductor wet processing are generally classified into three modes, tank, shower, and conformable.

For a tank megasonic system, the tank is similar to a conventional ultrasonic wet process, and fig. 7 is a schematic diagram of the tank megasonic system provided in the present invention in a normal state, as shown in fig. 7, in which a megasonic emission unit is placed at the bottom of a water tank (external tank), and a wafer is placed in the water tank during wet process, and the coupling liquid is loaded in the water tank (hatched in the figure). The top layer of the megasonic emission unit in this manner is typically an oscillating layer of stainless steel, and in order to prevent metal ions from leaking into the process fluid and affecting the semiconductor device, it is often necessary to place an indirect bath (inner bath) of quartz material above the megasonic emission unit.

The megasonic emission unit is mounted to the bottom of an external tank, typically of polyvinylidene fluoride (PVDF) or stainless steel. The quartz tank is placed in the middle of the outer tank, the processing liquid is placed inside the quartz tank, and the processed semiconductor wafer is placed in the quartz tank. The coupling conductive liquid (such as pure water) is filled between the megasonic emission unit and the bottom of the quartz tank to transfer megasonic energy into the quartz tank.

In practical situations, even if the tank megasonic system is in a normal state, when megasonic waves are transmitted to the boundary between the liquid and the air in the inner tank, reflected waves exist, but the reflected waves have lower intensity than those in abnormal situations such as accumulated bubbles, poor matching of the wall thickness of the inner tank, low water level and the like because the reflected waves pass through a longer path.

Fig. 8 is a schematic view of the tank type megasonic system provided by the present invention in a low water level state, and fig. 9 is a schematic view of the tank type megasonic system provided by the present invention in a bubble accumulation state, as shown in fig. 8 and 9.

Because there are bubbles in the conductive liquid, the bubbles will typically adsorb and accumulate at the bottom of the quartz tank, and too many bubbles will cause an obstruction to megasonic transmission, thereby reducing process efficiency. It has been an important issue for such megasonic systems how to prevent bubble accumulation or purge bubbles.

For a bonded megasonic system, fig. 10 is a schematic illustration of the wet process of the bonded megasonic system provided by the present invention, as shown in fig. 10, with the megasonic unit being adjacent to the surface of the semiconductor wafer, typically with a gap of only a few millimeters between the two. In the processing process, the megasonic emission unit is fixed, the wafer rotates, and the liquid supply device continuously conveys the processing liquid to the wafer, and the processing liquid can fill the gap between the megasonic emission unit and the surface of the wafer, so that the transmission of megasonic waves to the surface of the wafer is realized.

Fig. 11 is a schematic diagram of the bonded megasonic system provided by the present invention in a normal state, fig. 12 is a schematic diagram of the bonded megasonic system provided by the present invention in a liquid underfill state, and fig. 13 is a schematic diagram of the bonded megasonic system provided by the present invention in an unvented liquid state, as shown in fig. 11 to fig. 13, in which the method is more sensitive to the gap filling situation and the bubble problem of the processing liquid, and directly affects the processing effect of the megasonic emission unit on the semiconductor wafer.

For a spray megasonic system, the spray type is that a megasonic emission unit is made into a nozzle form, megasonic falls onto a wafer along with water flow, and fig. 14 is a schematic diagram of the spray type megasonic system provided by the invention in a normal state.

Fig. 15 is a schematic diagram of the spray megasonic system provided by the present invention in a bubble accumulation state, and fig. 16 is a schematic diagram of the spray megasonic system provided by the present invention in a state of insufficient liquid flow, as shown in fig. 15 and 16, the conducting liquid in this way is generally a treatment liquid, and bubbles in the treatment liquid are easily adsorbed and accumulated on the surface of the megasonic transducer, or holes appear on the surface of the megasonic transducer due to too low flow of the treatment liquid, which can cause the decrease of the transfer efficiency of megasonic waves and even damage of the megasonic transducer.

Aiming at the three common modes, by utilizing the control method of the megasonic system based on the wet processing of the device, which is provided by the embodiment of the invention, through collecting the output voltage and current signals, the equivalent impedance of the megasonic emission unit is calculated in real time, and the coupling condition between the megasonic emission unit and the processed semiconductor device (wet processing platform) can be judged in real time. The megasonic system can be prevented from working under the condition of poor coupling caused by insufficient filling of conductive liquid or accumulation of bubbles, and the occurrence of poor treatment efficiency and damage to the megasonic emission unit and the megasonic generator is avoided.

Alternatively, the megasonic emission unit may include at least two transducers.

In the related art, the frequency of the megasonic generator is rapidly changed in a section near the resonance frequency point of the megasonic emission unit, such as the resonance frequency point fr±Δfkhz, which can be defined as the optimal frequency range of the transducer, and the current and voltage phase difference of the megasonic emission unit is always kept in a small constant section, for example, preferably 0 to 10 degrees.

Determination of sweep range: for a megasonic emission unit composed of a plurality of piezoelectric ceramic transducers, the resonance frequency points of the piezoelectric ceramic transducers are not identical due to the tolerance of the piezoelectric ceramic transducers. If excitation is performed at the same frequency, the vibration amplitude of each piezoelectric ceramic transducer is different, and thus the sound field of the whole megasonic emission unit is uneven.

In addition, for tank megasonic systems, the fixed frequency of wet processing can create standing wave effects due to the superposition of reflected and emitted waves, resulting in an uneven sound field distribution in the vertical direction.

In view of the above problems, some conventional frequency sweeping methods select the highest and lowest resonance frequency points in all piezoelectric ceramic transducers as the upper and lower limits of the frequency sweeping range, or larger than the upper and lower limits.

For example, in a megasonic emission unit composed of 3 piezoelectric transducers a, b, and c, the lowest frequency is fa, and the highest frequency is fc, and the sweep range is set to fa- Δf to fc+Δf.

Alternatively, the average value of all the transducer frequencies is chosen as the center value and then floats up and down at Δf0 at the center frequency f 0.

However, the conventional frequency sweep method has the following problems:

fig. 17 is a schematic waveform diagram of a conventional sweep mode, as shown in fig. 17, when the frequency difference between the piezoelectric transducers is large, for example, the frequency difference between the points a, b and c is large, there is a problem that a period of time (for example, the period of time ta2 to tb 1) is a period of time when the piezoelectric transducers are operated at a relatively large deviation from the resonance frequency, and during this period of time, all the piezoelectric transducers cannot be operated in the optimal frequency range, i.e., fr±Δf, which results in low conversion efficiency.

Fig. 18 is a second waveform diagram of a conventional sweep mode, as shown in fig. 18, in which the average frequency is used as the center frequency, which may cause a problem that the different piezoelectric transducers operate in the optimal frequency range thereof, for example, the frequency range of the generator only covers a part of the optimal frequency range of the transducer a, so that the time for operating the transducer a in the optimal frequency range is lower than that of the transducers b and c, and a certain time is also required for operating in the non-optimal range of all the transducers (for example, two time periods of t0 corresponding to ta2 to tb1 and tc2 to f0+Δf0), which is a "waste" time period.

In the embodiment of the invention, in the sweep frequency mode, the sweep frequency range corresponding to each transducer can be determined based on the center frequency of each transducer, and then each transducer is swept according to the sweep frequency range corresponding to each transducer. Therefore, the frequency sweep of the same range can be carried out for the resonance frequency point of each transducer, and at least one transducer of the megasonic emission unit can always work in the optimal frequency range, so that the problem that the resonance frequency point of each transducer works in a period of time when the frequency difference of the transducer is large and the problem that different transducers work in the optimal frequency range for different time are avoided, and the efficiency and uniformity of the megasonic emission unit for transmitting sound waves can be effectively improved.

The embodiment of the invention takes the resonant frequency of each piezoelectric transducer as a central frequency, and then sets a small range for frequency sweep. For example, 3 piezoelectric transducers, the resonance frequencies are fa, fb, fc, respectively, and then the sweep width may be set to ±Δf.

Fig. 19 is a schematic waveform diagram of a sweep mode in the control method of the megasonic system based on wet processing of devices according to the present invention, and as shown in fig. 19, sweep is sequentially performed over the optimal frequency ranges of the three points a, b and c.

Fig. 20 is a second waveform schematic diagram of a sweep mode in the control method of a megasonic system based on wet processing of a device according to the present invention, as shown in fig. 20, the sweep may be performed on the optimal frequency ranges of the three points a, b and c in the direction of increasing the frequency, and then the sweep may be performed on the optimal frequency ranges of the three points a, b and c in the direction of decreasing the frequency, which is different from the related art in that when the frequency of the different points is changed, it may be understood that the sweep is directly switched to the optimal frequency range of the next point, instead of gradually changing to the optimal frequency range of the next point with time.

Compared with the traditional sweep frequency mode, the embodiment of the invention has the advantages that for the megasonic emission unit formed by a plurality of piezoelectric ceramic transducers, all the piezoelectric ceramic transducers can be ensured to work on resonance points within a certain time, so that the average sound field of the whole megasonic emission unit on a two-dimensional plane within a certain time is ensured to be uniform. In addition, for a tank megasonic system, the sweep mode can also effectively prevent standing waves from being generated in the longitudinal direction of the liquid.

The control device of the megasonic system based on the device wet process provided by the invention is described below, and the control device of the megasonic system based on the device wet process described below and the control method of the megasonic system based on the device wet process described above can be referred to correspondingly with each other.

The megasonic system includes: the power amplification device comprises a control unit, a power supply unit, a power amplification unit and a megasonic emission unit which are sequentially connected in series, wherein the input end of the control unit is connected with the output end of the power amplification unit, and the output end of the control unit is respectively connected with the control end of the power supply unit and the control end of the power amplification unit.

Fig. 21 is a schematic structural diagram of a control apparatus for a megasonic system based on wet processing of devices according to the present invention, and as shown in fig. 21, a control apparatus 2100 for a megasonic system based on wet processing of devices includes:

the acquisition module 2101 is used for acquiring the voltage signal and the current signal output by the power amplification unit;

a calculation module 2102 for calculating a target equivalent impedance of the megasonic emission unit based on the voltage signal and the current signal;

a determining module 2103 for determining liquid coupling information based on the target equivalent impedance; wherein the liquid coupling information is used to characterize the degree of liquid coupling between the megasonic emission unit and the wet processing platform;

A processing module 2104 for performing device wet processing on the wet processing platform by controlling the power supply unit and the power amplification unit based on the liquid coupling information.

In the control device of the megasonic system based on the device wet processing provided by the embodiment of the invention, the magnitude of the reflected wave can be measured by calculating the change of the equivalent impedance of the megasonic emission unit, so that the liquid coupling degree (such as the problem of bubble accumulation and the like) between the megasonic emission unit and the wet processing platform is reflected, the device wet processing is performed on the wet processing platform by referring to the liquid coupling degree, for example, the device wet processing can be performed on the wet processing platform when the liquid coupling degree is higher, the transmission efficiency of the megasonic wave is effectively improved, the processing efficiency of the megasonic wave on the device is further improved, in addition, the situation that holes appear on the surface of the megasonic vibrator, and the megasonic vibrator is damaged is avoided, and the robustness of the megasonic wave system is effectively improved.

Optionally, the determining module 2103 is specifically configured to:

Optionally, the determining module 2103 is further specifically configured to:

Optionally, the liquid coupling information includes a liquid coupling value, and the processing module 2104 is specifically configured to:

the processing module 2104 is also configured to:

prohibiting wet processing of the device at the wet processing platform;

And outputting alarm information.

Optionally, the megasonic emission unit includes at least two transducers, and the processing module 2104 is further configured to:

Optionally, the power supply unit includes a dc power supply unit, and the power amplifying unit includes at least one inverter module.

Optionally, in the case that the power amplifying unit includes at least two inverter modules, the inverter modules are connected in parallel.

Optionally, each of the inverter modules includes at least one of a full bridge inverter and a half bridge inverter.

Fig. 22 is a schematic structural diagram of an electronic device according to the present invention, and as shown in fig. 22, the electronic device may include: processor 2210, communication interface (Communications Interface) 2220, memory 2230 and communication bus 2240, wherein processor 2210, communication interface 2220 and memory 2230 communicate with each other via communication bus 2240. Processor 2210 may invoke logic instructions in memory 2230 to perform a method of controlling a megasonic system based on device wet processing, the megasonic system comprising: the power amplification device comprises a control unit, a power supply unit, a power amplification unit and a megasonic emission unit, wherein the power supply unit, the power amplification unit and the megasonic emission unit are sequentially connected in series, the input end of the control unit is connected with the output end of the power amplification unit, and the output end of the control unit is respectively connected with the control end of the power supply unit and the control end of the power amplification unit;

The method comprises the following steps:

Further, the logic instructions in the memory 2230 described above may be implemented in the form of software functional units and stored in a computer-readable storage medium when sold or used as a stand-alone product. Based on this understanding, the technical solution of the present invention may be embodied essentially or in a part contributing to the prior art or in a part of the technical solution, in the form of a software product stored in a storage medium, comprising several instructions for causing a computer device (which may be a personal computer, a server, a network device, etc.) to perform all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a magnetic disk, or an optical disk, or other various media capable of storing program codes.

In another aspect, the present invention also provides a computer program product, where the computer program product includes a computer program, where the computer program can be stored on a non-transitory computer readable storage medium, where the computer program, when executed by a processor, can perform a control method of a megasonic system based on wet device processing provided by the above methods, where the megasonic system includes: the power amplification device comprises a control unit, a power supply unit, a power amplification unit and a megasonic emission unit, wherein the power supply unit, the power amplification unit and the megasonic emission unit are sequentially connected in series, the input end of the control unit is connected with the output end of the power amplification unit, and the output end of the control unit is respectively connected with the control end of the power supply unit and the control end of the power amplification unit;

the method comprises the following steps:

In yet another aspect, the present invention also provides a non-transitory computer readable storage medium having stored thereon a computer program which, when executed by a processor, is implemented to perform the method of controlling a megasonic system based on wet device processing provided by the above methods, the megasonic system comprising: the power amplification device comprises a control unit, a power supply unit, a power amplification unit and a megasonic emission unit, wherein the power supply unit, the power amplification unit and the megasonic emission unit are sequentially connected in series, the input end of the control unit is connected with the output end of the power amplification unit, and the output end of the control unit is respectively connected with the control end of the power supply unit and the control end of the power amplification unit;

the method comprises the following steps:

The apparatus embodiments described above are merely illustrative, wherein the elements illustrated as separate elements may or may not be physically separate, and the elements shown as elements may or may not be physical elements, may be located in one place, or may be distributed over a plurality of network elements. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art will understand and implement the present invention without undue burden.

From the above description of the embodiments, it will be apparent to those skilled in the art that the embodiments may be implemented by means of software plus necessary general hardware platforms, or of course may be implemented by means of hardware. Based on this understanding, the foregoing technical solution may be embodied essentially or in a part contributing to the prior art in the form of a software product, which may be stored in a computer readable storage medium, such as ROM/RAM, a magnetic disk, an optical disk, etc., including several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute the method described in the respective embodiments or some parts of the embodiments.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method of controlling a megasonic system based on wet processing of a device, the megasonic system comprising: the power amplification device comprises a control unit, a power supply unit, a power amplification unit and a megasonic emission unit, wherein the power supply unit, the power amplification unit and the megasonic emission unit are sequentially connected in series, the input end of the control unit is connected with the output end of the power amplification unit, and the output end of the control unit is respectively connected with the control end of the power supply unit and the control end of the power amplification unit;

the method comprises the following steps:

performing device wet processing on the wet processing platform by controlling the power supply unit and the power amplification unit based on the liquid coupling information;

wherein the determining the liquid coupling information based on the target equivalent impedance comprises:

2. The method for controlling a megasonic system based on wet processing of devices according to claim 1, wherein said determining said liquid coupling information based on said target equivalent impedance and a preset reference equivalent impedance comprises:

3. The method of controlling a megasonic system based on wet processing of devices of claim 2 wherein said determining said liquid coupling information based on said target equivalent impedance and a preset reference equivalent impedance further comprises:

4. The method for controlling a megasonic system based on wet processing of a device according to claim 1, wherein the determining the liquid coupling information based on the first variation interval of the target equivalent impedance and the second variation interval of the preset reference equivalent impedance comprises:

5. The method for controlling a megasonic system based on device wet processing according to any one of claims 1 to 4, wherein the liquid coupling information comprises a liquid coupling value, and wherein the device wet processing is performed on the wet processing platform by controlling the power supply unit and the power amplification unit based on the liquid coupling information, comprising:

the method further comprises the steps of:

prohibiting wet processing of the device at the wet processing platform;

And outputting alarm information.

6. The method of controlling a megasonic system based on wet processing of devices of claim 1 wherein the megasonic unit comprises at least two transducers, the method further comprising:

7. The method of claim 1, wherein the power supply unit comprises a dc power supply unit and the power amplification unit comprises at least one inverter module.

8. The method for controlling a megasonic system based on wet processing of device according to claim 7, wherein in the case where the power amplification unit comprises at least two inverter modules, each of the inverter modules is connected in parallel.

9. The method of claim 7 or 8, wherein each of the inverter modules includes at least one of a full-bridge inverter and a half-bridge inverter.

10. The method of claim 1, wherein the megasonic system comprises at least one of a tank megasonic system, a conformable megasonic system, and a shower-type megasonic system.