CN116093181A - Multispectral photoelectric detector based on stacked PN junction - Google Patents

Multispectral photoelectric detector based on stacked PN junction Download PDF

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CN116093181A
CN116093181A CN202211479892.9A CN202211479892A CN116093181A CN 116093181 A CN116093181 A CN 116093181A CN 202211479892 A CN202211479892 A CN 202211479892A CN 116093181 A CN116093181 A CN 116093181A
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well
growth layer
stacked
junction
layer
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申冲
赵江婷
刘俊
曹慧亮
唐军
王晨光
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North University of China
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North University of China
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

The invention discloses a multi-spectrum photoelectric detector based on a stacked PN junction, which comprises a P-type substrate, a first growth layer, a second growth layer, a defining layer and an electrode layer, wherein the P-type substrate comprises a first P well, a first N well, a second P well and a second N well which are sequentially stacked from top to bottom, and the lengths of the first P well, the first N well, the second P well and the second N well are sequentially increased; the electrode layer comprises a source electrode, a drain electrode and a grid electrode; the first growth layer is positioned above the P-type substrate, the source electrode and the drain electrode are positioned above the P-type substrate and are positioned on two sides of the first growth layer, and an N well is arranged below the source electrode and the drain electrode; the first growth layer is arranged on the first substrate, the second growth layer is arranged on the first growth layer and on two sides of the first growth layer, and the grid electrode is arranged on the first growth layer. The invention can realize full spectrum absorption; the detector has simple structure and low manufacturing cost; the response is high, and the response speed is high; is easy to be compatible with silicon optoelectronics platform and CMOS integrated process.

Description

Multispectral photoelectric detector based on stacked PN junction
Technical Field
The invention relates to the fields of photoelectric devices, semiconductor manufacturing technologies and imaging spectrums, in particular to a multi-spectrum photoelectric detector based on a stacked PN junction.
Background
In a plurality of detection devices or equipment, the semiconductor detector is made of semiconductor materials, and has the characteristics of small volume, light weight, vibration resistance, high efficiency, low power consumption, long service life and the like, so that the semiconductor detector becomes an important carrier for realizing optical signal detection. The semiconductor photoelectric device is not only an important part of semiconductor optoelectronics, but also has very wide application fields and has indispensable functions in military, national defense, optical communication and other aspects. The photodetector is a photoelectric device capable of converting an optical signal into an electrical signal based on the basic physical phenomenon of a photogenerated carrier, and capable of judging the existence, intensity, position, color, and the like of the optical signal. Among all photodetectors, silicon-based photodetectors are the most developed devices with the longest development time and the most mature process technology. This is not only because silicon is one of the earliest semiconductor materials found, but also because silicon has the advantages of easy production, abundant resources, low cost, easy doping, etc., and along with the development of microelectronics technologies, related technologies have also led to the development of diversified structures for silicon photodetectors, including silicon PN junction photodetectors, silicon-based PIN photodetectors, etc.
Photoelectric detection is one of the core functions of modern information technology. With the development of science and technology, the application requirement cannot be met because the photoelectric detection system has only a single wave band, and the photoelectric detection system is often required to have polychromatic light resolution capability nowadays, so that the multiband photoelectric detector has developed. The traditional photoelectric detector has smaller detection range, complex system design and higher manufacturing cost.
Disclosure of Invention
The invention aims to: in order to solve the problems of single detection spectrum, complex structure and the like of the conventional photoelectric detector, the invention provides a multi-spectrum photoelectric detector based on a stacked PN junction.
The technical scheme is as follows: the multi-spectrum photoelectric detector based on the stacked PN junction comprises a P-type substrate, a first growth layer, a second growth layer, a defining layer and an electrode layer, wherein the P-type substrate comprises a first P well, a first N well, a second P well and a second N well which are sequentially stacked from top to bottom, and the lengths of the first P well, the first N well, the second P well and the second N well are sequentially increased; the electrode layer comprises a source electrode, a drain electrode and a grid electrode; the first growth layer is positioned above the P-type substrate, the source electrode and the drain electrode are positioned above the P-type substrate and are positioned on two sides of the first growth layer, and an N well is arranged below the source electrode and the drain electrode; the first growth layer is arranged on the first substrate, the second growth layer is arranged on the first growth layer and on two sides of the first growth layer, and the grid electrode is arranged on the first growth layer.
Further, four PN junctions are formed among the longitudinally stacked first P well, first N well, second P well, second N well and the P-type substrate, and the four PN junctions form four photodiodes.
Further, the depths of the first P well, the first N well, the second P well and the second N well are J 1 、J 2 、J 3 、J 4 ，0＜J 1 ≤0.2μm，0.2μm＜J 2 ≤0.5μm，0.5μm＜J 3 ≤1.5μm，1.5μm＜J 4 ≤3.0μm。
Further, the doping concentrations of the first P well, the first N well, the second P well, the second N well and the P-type substrate are C5, C4, C3, C2 and C1 respectively, and C5 > C4 > C3 > C2 > C1.
Further, the P-type substrate material is silicon.
Further, the first growth layer and the second growth layer are both oxide layers.
Further, the defined layer material is polysilicon.
Further, the electrode layer material is metallic aluminum.
The beneficial effects are that: compared with the prior art, the multi-spectrum photoelectric detector based on the stacked PN junction provided by the invention has the advantages that a large-range spectral response can be realized with a very simple structure, and full-spectrum absorption can be realized; the detector has simple structure and low manufacturing cost; the response is high, and the response speed is high; is easy to be compatible with silicon optoelectronics platform and CMOS integrated process.
Drawings
FIG. 1 is a flow chart of a simulation program of a multi-spectral photodetector based on a stacked PN junction;
FIG. 2 is a schematic diagram of a three-dimensional structure of a multi-spectral photodetector based on stacked PN junctions according to the present invention;
FIG. 3 is a schematic diagram of the substrate structure of a stacked PN junction-based multi-spectral photodetector of the present invention;
FIG. 4 is a graph of the change in absorption coefficient of silicon for photons of different wavelengths;
FIG. 5 is a partial cross-sectional view of a substrate of a stacked PN junction-based multi-spectral photodetector of the present invention;
FIG. 6 (a) is a graph of the spectral response current of a stacked PN junction-based multi-spectral photodetector of the present invention;
FIG. 6 (b) is a graph showing the spectral response current contrast of the stacked PN junction-based multi-spectral photodetector of the present invention at a quantum efficiency of 1;
FIG. 7 (a) is a graph of response time of a stacked PN junction-based multi-spectral photodetector of the present invention;
FIG. 7 (b) is an enlarged graph of the response time parameter of the stacked PN junction-based multi-spectral photodetector of the present invention;
the semiconductor device comprises a P-type substrate 1, a first growth layer 2, a second growth layer 3, a definition layer 4, a first P well 5, a first N well 6, a second P well 7, a second N well 8, a source electrode 9, a drain electrode 10 and a grid electrode 11.
Detailed Description
The invention is further illustrated by the following description in conjunction with the accompanying drawings and specific embodiments.
A multi-spectral photoelectric detector based on stacked PN junctions, as shown in FIG. 2, comprises a P-type substrate 1, a first growth layer 2, a second growth layer 3, a definition layer 4 and an electrode layer. As shown in fig. 3, the P-type substrate 1 includes a first P-well 5, a first N-well 6, a second P-well 7, and a second N-well 8 stacked in sequence from top to bottom, and the lengths of the first P-well 5, the first N-well 6, the second P-well 7, and the second N-well 8 are sequentially increased, that is, the well regions from top to bottom are larger and larger, as shown in fig. 3; the electrode layer comprises a source electrode 9, a drain electrode 10 and a grid electrode 11; the first growth layer 2 is positioned above the P-type substrate 1, the source electrode 9 and the drain electrode 10 are positioned above the P-type substrate 1 and are positioned at two sides of the first growth layer 2, and an N well is arranged below the source electrode 9 and the drain electrode 10; the defining layer 4 is located above the first growth layer 2, the second growth layer 3 is located above the first growth layer 2 and on both sides of the defining layer 4, and the gate 11 is located above the defining layer 4.
The material of the P-type substrate 1 is silicon (Si). The first growth layer 2 and the second growth layer 3 are oxide layers, and in this embodiment, the materials of the first growth layer 2 and the second growth layer 3 are silicon dioxide (SiO 2 ). The material of the defining layer 4 is polysilicon, and the boundary of the active region is defined by polysilicon in the manufacturing process, so that the active region can be self-aligned during ion implantation, and the self-alignment function is realized. The electrode layer material of this embodiment is metallic aluminum (A1). The above materials are all exemplified materials, and other materials may be used as long as the functions are satisfied, and the above materials are not limited thereto.
Four PN junctions are formed among the longitudinally stacked first P well 5, first N well 6, second P well 7, second N well 8 and the P-type substrate 1, and the four PN junctions form four photodiodes. Wherein, a first PN junction is formed between the first P well 5 and the first N well 6, a second PN junction is formed between the first N well 6 and the second P well 7, a third PN junction is formed between the second P well 7 and the second N well 8, and a fourth PN junction is formed between the second N well 8 and the P-type substrate 1.
The depths of the first P well 5, the first N well 6, the second P well 7 and the second N well 8 are J 1 、J 2 、J 3 、J 4 ，0＜J 1 ≤0.2μm，0.2μm＜J 2 ≤0.5μm，0.5μm＜J 3 ≤1.5μm，1.5μm＜J 4 Less than or equal to 3.0 mu m. J in the present example 1 、J 2 、J 3 、J 4 The sizes were 0.1 μm, 0.2 μm, 0.6 μm and 2 μm, respectively.
The principle of this embodiment is that the absorption rate of photons by the silicon material is related to the photon wavelength, and as shown in fig. 4, the wavelength from ultraviolet light to infrared light monotonically decreases, and the shorter the wavelength of incident light, the larger the absorption coefficient of silicon. For long wave light, the absorption coefficient is small and photons need to penetrate a longer distance in silicon, and a larger layer thickness is required if the long wave light is to be absorbed sufficiently, so red photons are generally absorbed within a depth of 1.5-3.0 μm. Four PN junctions longitudinally stacked in the structure form four photodiodes at different depths, so that the portion with the shallower depth can absorb incident light with shorter wavelength, and the portion with the deeper depth can absorb incident light with longer wavelength. By defining the depth of each PN junction, full spectral absorption can be achieved. The structure fully utilizes the characteristic of longitudinal stacking to realize the absorption of different wavelengths, and the area of the structure is not increased.
Therefore, the first PN junction, the second PN junction, the third PN junction and the fourth PN junction respectively realize the detection of ultraviolet (P), blue (B), green (G) and red (R) spectrums. As shown in FIG. 5, the doping concentrations of the first P-well, the first N-well, the second P-well, the second N-well and the P-type substrate are C5, C4, C3, C2, C1, C5 > C4 > C3 > C2 > C1, respectively. Generally the doping concentration of the substrate is the lowest, otherwise it is difficult to continue doping other regions on the substrate. And secondly, as the concentration of the photon-generated carriers generated by the incident light in the silicon material is reduced along with the increase of the depth, the proper reduction of the doping concentration corresponds to the increase of the service life of electrons to a certain extent, namely the probability of the photon-generated carriers being compounded is reduced, so that the doping concentration is smaller along with the increase of the depth, the detector is facilitated to collect more carriers, and the performance of the detector is improved. Table 1 shows the specific doping settings for each region of this example.
TABLE 1 doping settings for each region
Region doping type Doping concentration symbology Specific doping (cm) -3 )
P-type substrate C 1 1×10 15
Second N type C 2 1×10 16
Second P type C 3 1×10 17
First N type C 4 1×10 18
First P type C 5 1×10 19
In order to verify the detection effect of the multi-spectrum photoelectric detector based on the stacked PN junction, the following simulation experiment is performed: the device simulation is carried out by using an ATLAS part in Silvaco TCAD, the doping concentration of each region is described by establishing a simulation grid, defining regions, materials and electrodes, and finally the structure model, the internal characteristics of the device and the electrical characteristic result are obtained in Tonyplot, and the simulation process is shown in figure 1.
By defining the light beam (band range of 0.3-0.8 μm), the spectral response characteristics of the photodetector were simulated, and the spectral response current curves are shown in fig. 6 (a) and 6 (b). By setting a proper time step change, a characteristic curve of the response time of the characteristic parameter of the photoelectric detector is obtained, and as shown in fig. 7 (a) and 7 (b), the response time is obtained by analysis8.191×10 -7 s. As can be seen from fig. 6 and fig. 7, the structure of the photodetector proposed in this embodiment not only can realize multispectral absorption from ultraviolet to visible light, but also has the characteristics of high responsivity, high response speed, and the like.

Claims (8)

1. The multi-spectrum photoelectric detector based on the stacked PN junction is characterized by comprising a P-type substrate, a first growth layer, a second growth layer, a defining layer and an electrode layer, wherein the P-type substrate comprises a first P well, a first N well, a second P well and a second N well which are sequentially stacked from top to bottom, and the lengths of the first P well, the first N well, the second P well and the second N well are sequentially increased; the electrode layer comprises a source electrode, a drain electrode and a grid electrode; the first growth layer is positioned above the P-type substrate, the source electrode and the drain electrode are positioned above the P-type substrate and are positioned on two sides of the first growth layer, and an N well is arranged below the source electrode and the drain electrode; the first growth layer is arranged on the first substrate, the second growth layer is arranged on the first growth layer and on two sides of the first growth layer, and the grid electrode is arranged on the first growth layer.
2. The stacked PN junction-based multispectral photodetector of claim 1, wherein the first P-well, the first N-well, the second P-well, the second N-well, and the P-type substrate are stacked longitudinally to form four PN junctions therebetween, the four PN junctions forming four photodiodes.
3. The stacked PN junction-based multispectral photodetector of claim 1 or 2, wherein the depths of the first P-well, the first N-well, the second P-well, and the second N-well are J 1 、J 2 、J 3 、J 4 ，0＜J 1 ≤0.2μm，0.2μm＜J 2 ≤0.5μm，0.5μm＜J 3 ≤1.5μm，1.5μm＜J 4 ≤3.0μm。
4. The stacked PN junction-based multispectral photodetector of claim 1 or 2, wherein the doping concentrations of the first P-well, the first N-well, the second P-well, the second N-well, and the P-type substrate are C5, C4, C3, C2, C1, C5 > C4 > C3 > C2 > C1, respectively.
5. The stacked PN junction-based multispectral photodetector of claim 1 or 2, wherein said P-type substrate material is silicon.
6. The stacked PN junction-based multispectral photodetector of claim 1 or 2, wherein said first and second growth layers are both oxide layers.
7. The stacked PN junction-based multispectral photodetector of claim 1 or 2, wherein the defined layer material is polysilicon.
8. The stacked PN junction-based multispectral photodetector of claim 1 or 2, wherein the electrode layer material is metallic aluminum.
CN202211479892.9A 2022-11-17 2022-11-17 Multispectral photoelectric detector based on stacked PN junction Pending CN116093181A (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965875A (en) * 1998-04-24 1999-10-12 Foveon, Inc. Color separation in an active pixel cell imaging array using a triple-well structure
CN112186085A (en) * 2020-10-09 2021-01-05 河北工业大学 Deep ultraviolet semiconductor light emitting diode without pGaN (pGaN) at edge and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965875A (en) * 1998-04-24 1999-10-12 Foveon, Inc. Color separation in an active pixel cell imaging array using a triple-well structure
CN112186085A (en) * 2020-10-09 2021-01-05 河北工业大学 Deep ultraviolet semiconductor light emitting diode without pGaN (pGaN) at edge and preparation method thereof

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