CN115832848A - Frequency-locked deep ultraviolet ultrafast laser - Google Patents

Frequency-locked deep ultraviolet ultrafast laser Download PDF

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CN115832848A
CN115832848A CN202211542363.9A CN202211542363A CN115832848A CN 115832848 A CN115832848 A CN 115832848A CN 202211542363 A CN202211542363 A CN 202211542363A CN 115832848 A CN115832848 A CN 115832848A
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frequency
laser
locked
mode
amplification
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CN115832848B (en
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黄志华
李超
徐强坤
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Wuhan Guangzhi Technology Co ltd
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Wuhan Guangzhi Technology Co ltd
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Abstract

The invention provides a frequency-locked deep ultraviolet ultrafast laser, which belongs to the technical field of laser, wherein a mode-locked oscillator outputs mode-locked pulse laser, and the mode-locked pulse laser outputs power amplified laser after being amplified by an optical fiber power amplifier; the frequency-locked loop also comprises a solid amplifier, a frequency doubling module and a frequency-locked electronic module; the power amplified laser sequentially passes through a solid amplifier and a frequency doubling module and then outputs target laser; the frequency-locking electronic module adjusts the optical fiber power amplifier and the mode-locking oscillator; the first photoelectric detector is used for detecting the mode-locked pulse laser output by the light splitting isolator, and the first photoelectric detector transmits the detected mode-locked pulse laser result to the frequency-locked electronic module; the second photoelectric detector detects the repetition frequency signal and transmits the repetition frequency signal to the frequency locking electronic module, and the photoelectron frequency stabilizing system drives the piezoelectric ceramic to change in position so as to realize stable compensation and locking of the repetition frequency.

Description

Frequency-locked deep ultraviolet ultrafast laser
Technical Field
The invention relates to the technical field of laser coupling, in particular to a frequency-locked deep ultraviolet ultrafast laser.
Background
The deep ultraviolet picosecond pulse laser can bombard a photocathode material and generate electron beam groups with picosecond width, and the shorter the laser wavelength is, the higher the quantum efficiency of electron beams generated by the photocathode is. The high-quality electron beam group forms a high-energy electron beam group after being accelerated by an electromagnetic field, and finally forms high-energy X rays after passing through a magnet oscillator and is used for material detection. Grant publication No. CN209766852U, name: an ultrafast laser is disclosed, which is based on the mode locking technology of semiconductor saturable absorber mirror (SESAM), kerr lens, etc. and has pulse width in ps (unit: picosecond) or even fs (unit: femtosecond) magnitude. In order to effectively accelerate the electron beam, the time jitter needs to be controlled in the order of hundred femtoseconds, and strict synchronization and frequency locking between the microwave signal and the optical pulse of the acceleration signal are ensured.
Therefore, a uv ultrafast laser that accelerates the synchronization and frequency locking between the microwave signal and the optical pulse of the signal is needed.
Disclosure of Invention
In view of this, the present invention provides a deep ultraviolet ultrafast laser, in which a laser can be freely controlled to form macro-pulse trains with various pulse widths and repetition frequencies, so as to form corresponding electron clusters and ensure synchronization and frequency locking between microwave signals and optical pulses of acceleration signals.
The technical scheme of the invention is realized as follows: a frequency-locked deep ultraviolet ultrafast laser comprises a mode-locked oscillator and an optical fiber power amplifier,
the mode locking oscillator outputs mode locking pulse laser, and the mode locking pulse laser is amplified by the optical fiber power amplifier and then outputs power amplified laser;
the frequency-locked loop also comprises a solid amplifier, a frequency doubling module and a frequency-locked electronic module;
the power amplified laser sequentially passes through a solid amplifier and a frequency doubling module and then outputs target laser;
the frequency-locked electronics module regulates the fiber power amplifier and the mode-locked oscillator.
On the basis of the technical scheme, the optical fiber power amplifier further comprises an electro-optical switch and an electro-optical driver, the electro-optical driver drives the electro-optical switch to be powered on and powered off, the electro-optical switch is arranged between the optical fiber power amplifier and the solid amplifier, and the output end of the electro-optical switch is connected with the input end of the solid amplifier.
On the basis of the above technical solution, preferably, the mode-locked oscillator includes a saturable absorber and a piezoelectric ceramic, and the saturable absorber is fixedly disposed on the movable piezoelectric ceramic.
On the basis of the above technical scheme, preferably, the mode-locked oscillator further includes a chirped fiber bragg grating, a wavelength division multiplexer, and an optical splitter, wherein an output end of the piezoelectric ceramic is connected to the chirped fiber bragg grating, an output end of the chirped fiber bragg grating is connected to the wavelength division multiplexer, an output end of the wavelength division multiplexer is connected to the optical splitter, and the optical splitter outputs the mode-locked pulse laser.
On the basis of the above technical solution, preferably, the wavelength division multiplexer includes an ytterbium-doped fiber and a single-mode pump source, and an output end of the single-mode pump source injects the ytterbium-doped fiber.
On the basis of the above technical scheme, preferably, the optical fiber power amplifier includes a primary amplification light path, a secondary amplification light path and a tertiary amplification light path, and the output end of the wavelength division multiplexer outputs power amplification laser after sequentially passing through the primary amplification light path, the secondary amplification light path and the tertiary amplification light path.
On the basis of the above technical solution, preferably, the first-stage amplification optical path includes a first circulator, a first beam combiner, a first high-reflection mirror, and a first semiconductor pump source, where the first beam combiner is disposed between the first circulator and the first high-reflection mirror, and the first semiconductor pump source excites the first beam combiner.
On the basis of the above technical solution, preferably, the secondary amplification optical path includes a second circulator, a second beam combiner, a second high-reflection mirror, and a second semiconductor pump source, where the second beam combiner is disposed between the second circulator and the second high-reflection mirror, and the second semiconductor pump source excites the second beam combiner.
On the basis of the above technical solution, preferably, the third-stage amplification optical path includes a mode field adapter, a third beam combiner, a cladding light stripper, a third semiconductor pump source, and a fourth semiconductor pump source, the mode field adapter, the third beam combiner, and the cladding light stripper are sequentially arranged, and the third semiconductor pump source and the fourth semiconductor pump source excite the third beam combiner at the same time.
On the basis of the above technical scheme, preferably, the laser device further includes a beam splitter, a second photodetector, a polarization beam splitter, and a pulse train output switch module, where the power amplified laser enters the beam splitter and is divided by the beam splitter into a first power amplified laser and a second power amplified laser, the first power amplified laser enters the second photodetector, the second power amplified laser enters the polarization beam splitter, the polarization beam splitter divides the second power amplified laser into a first polarized laser and a second polarized laser, the first polarized laser enters the pulse train output switch module, the second polarized laser sequentially passes through the solid-state amplifier and the frequency doubling module, and the second photodetector is electrically connected to the frequency locking electronics module.
On the basis of the above technical scheme, preferably, the system further comprises a first photodetector, a photoelectron frequency stabilization system, a feedback system, a frequency doubling temperature control system and a frequency quadrupling temperature control system, wherein the frequency locking electronics module is electrically connected with the first photodetector, the photoelectron frequency stabilization system, the feedback system, the frequency doubling temperature control system and the frequency quadrupling temperature control system; the photoelectron frequency stabilizing system is electrically connected with the piezoelectric ceramic; the first photoelectric detector is electrically connected with the light splitting isolator; the feedback system is electrically connected with the third semiconductor pump source and the fourth semiconductor pump source; the frequency doubling temperature control system controls the temperature of the frequency doubling crystal, and the frequency quadrupling temperature control system controls the temperature of the frequency quadrupling crystal.
Compared with the prior art, the invention has the following beneficial effects:
(1) The first photoelectric detector is used for detecting the mode-locked pulse laser output by the light splitting isolator, and the first photoelectric detector transmits the detected mode-locked pulse laser result to the frequency-locked electronic module; the second photoelectric detector detects a repetition frequency signal and transmits the repetition frequency signal to the frequency locking electronic module, and the photoelectron frequency stabilizing system drives the position change of the piezoelectric ceramic to realize the stable compensation and locking of the repetition frequency;
(2) The primary amplification light path and the secondary amplification light path are both used for improving the conversion efficiency of quadruple frequency in a subsequent light path;
(3) The first polarized laser enters the pulse train output switch module to interfere with the power amplification laser, so that the phase of the power amplification laser is locked on the reference light;
(4) The solid amplifier needs to adopt a neodymium-doped yttrium vanadate (Nd: YVO 4) crystal rod amplifier for further amplification to overcome the problem of high laser pulse peak power;
(5) The temperature of the frequency doubling crystal is controlled by a frequency doubling temperature control system, and the temperature of the frequency quadrupling crystal is controlled by a frequency quadrupling temperature control system, so that the frequency doubling crystal and the frequency quadrupling crystal are kept in a stable working state.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a diagram of a frequency-locked DUV ultrafast laser according to the present invention;
fig. 2 is a specific structure diagram of a frequency-locked deep ultraviolet ultrafast laser according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
As shown in fig. 1, a frequency-locked deep ultraviolet ultrafast laser includes a mode-locked oscillator 1, an optical fiber power amplifier 2, an electro-optical switch 3, a solid amplifier 4, a frequency doubling module 5, a frequency-locked electronics module 6, a first photodetector 61, a second photodetector 62, an electronic frequency stabilization system 63, a feedback system 64, a photoelectric driver 65, a frequency doubling temperature control system 66, a frequency quadrupling temperature control system 67, a beam splitter 7, a polarization beam splitter 8, and a pulse train output switch module 9.
The mode-locked oscillator 1 outputs mode-locked pulse laser, the mode-locked pulse laser is amplified by the optical fiber power amplifier 2 and then outputs power amplified laser, and the power amplified laser sequentially passes through the solid amplifier 4 and the frequency doubling module 5 and then outputs target laser.
The mode-locked oscillator 1, as shown in fig. 1, includes a saturable absorber 11, a piezoelectric ceramic 12, a chirped fiber bragg grating 13, a wavelength division multiplexer 14, and an optical splitter 15, wherein the saturable absorber 11 is fixedly disposed on the movable piezoelectric ceramic 12.
The output end of the piezoelectric ceramic 12 is connected with the chirped fiber Bragg grating 13 through an ytterbium-doped single mode fiber, the output end of the chirped fiber Bragg grating 13 is connected with the wavelength division multiplexer 14, the output end of the wavelength division multiplexer 14 is connected with the light splitting isolator 15, and the light splitting isolator 15 outputs mode-locked pulse laser.
The wavelength division multiplexer 14 includes an ytterbium-doped fiber 141 and a single-mode pump source 142, the ytterbium-doped fiber 141 is injected at an output end of the single-mode pump source 142, wherein the single-mode pump source 142 uses a pump source of 980nm, and in order to lock repetition frequency of a pulse, a cavity length needs to be adjusted, so that the saturable absorber 11 is fixed on the movable piezoelectric ceramic 12, laser in the cavity is focused on the saturable absorber 11 through a coupling head, and a mode-locked pulse is formed, wherein the first photodetector 61 is electrically connected with the spectral isolator 15, the first photodetector 61 is used for detecting mode-locked pulse laser output by the spectral isolator 15, the first photodetector 61 is electrically connected with the optoelectronic frequency stabilization system 63, the optoelectronic frequency stabilization system 63 is electrically connected with the frequency-locked electronic module 6, and a mode-locked pulse laser result detected by the first photodetector 61 is transmitted to the frequency-locked electronic module 6.
Taking the microwave frequency of 2856MHz as an example, the repetition frequency of the mode-locked oscillator is 1/16 of the microwave, namely 178.5MHz. The saturable absorber 11 was chosen with appropriate parameters to obtain picosecond pulses with a pulse width of about 10ps, a center wavelength of 1064nm, a spectral width of about 0.3nm, and an average power of about 10 mW.
The optical fiber power amplifier 2 comprises a first-stage amplification light path 21, a second-stage amplification light path 22 and a third-stage amplification light path 23, the output end of the wavelength division multiplexer 14 outputs power amplification laser after sequentially passing through the first-stage amplification light path 21, the second-stage amplification light path 22 and the third-stage amplification light path 23, the first-stage amplification light path 21 and the second-stage amplification light path 22 adopt a double-pass amplification mode, and the third-stage amplification light path 23 adopts a single-pass reverse pumping mode.
The first-stage amplification optical path 21 includes a first circulator 211, a first beam combiner 212, a first high-reflection mirror 213, and a first semiconductor pump source 214, where the first beam combiner 212 is disposed between the first circulator 211 and the first high-reflection mirror 213, the first semiconductor pump source 214 excites the first beam combiner 212, the first circulator 211 and the first beam combiner 212 are connected by an ytterbium-doped fiber, the mode-locked pulse laser passes through the first beam combiner 212 and reaches the first beam combiner 212 through the ytterbium-doped fiber, and after being excited by the first semiconductor pump source 214, the seed signal is amplified, the amplified seed signal is reflected by the first high-reflection mirror 213 and then amplified again, and then output after passing through the first circulator 211 again, as a preferred embodiment, the first high-reflection mirror 213 is plated with a reflective film having a reflective bandwidth of 0.1 nm.
The seed signal output by the first circulator 211 enters the second-stage amplification optical path 22 again, the second-stage amplification optical path 22 includes a second circulator 221, a second beam combiner 222, a second high-reflection mirror 223 and a second semiconductor pump source 224, the second beam combiner 222 is disposed between the second circulator 221 and the second high-reflection mirror 223, the second semiconductor pump source 224 excites the second beam combiner 222, and the principle of the second-stage amplification optical path 22 is the same as that of the first-stage amplification optical path 21, and therefore redundant description is omitted here. The purpose of the first amplification optical path 21 and the second amplification optical path 22 is to improve the conversion efficiency of quadruple frequency in the subsequent optical path.
The third-stage amplification optical path 23 includes a mode field adapter 231, a third beam combiner 232, a cladding light stripper 233, a third semiconductor pump source 234 and a fourth semiconductor pump source 235, the mode field adapter 231, the third beam combiner 232 and the cladding light stripper 233 are sequentially arranged, the third semiconductor pump source 234 and the fourth semiconductor pump source 235 simultaneously excite the third beam combiner 232, the mode field adapter 231 and the third beam combiner 232 are connected through ytterbium-doped fibers, a feedback system 64 is electrically connected with the third semiconductor pump source 234 and the fourth semiconductor pump source 235, the feedback system 64 is electrically connected with the frequency-locked electronics module 6, and feeds back the working states of the third semiconductor pump source 234 and the fourth semiconductor pump source 235.
After the mode-locked pulse laser passes through the optical fiber power amplifier 2, the optical path of the mode-locked pulse laser in the optical fiber medium is at least 15 meters, so the optical path is long. In order to stabilize the frequency locking, and to know the condition of the power amplified laser after passing through the optical fiber power amplifier 2 at any time, a preferred embodiment is that the power amplified laser firstly enters the collimating energy mirror 10, enters the beam splitter 7 after being collimated by the collimating energy mirror 10, and is divided into a first power amplified laser and a second power amplified laser by the beam splitter 7, the first power amplified laser enters the second photodetector 62, the second photodetector 62 is electrically connected with the frequency locking electronics module 6, the second photodetector 62 detects the repetition frequency signal and transmits the repetition frequency signal to the frequency locking electronics module 6, and after frequency doubling (for example, 178.5MHz and 2856MHz, which are 16 MHz), the difference frequency calculation is performed between the microwave signal and the reference microwave signal to obtain an error feedback signal, and the error feedback signal is applied to the optoelectronic frequency stabilizing system 63, and the optoelectronic frequency stabilizing system 63 drives the position change of the piezoelectric ceramic 12 to realize stable compensation and locking of the repetition frequency.
The target laser needs a macro-pulse train, so that the second power amplified laser needs to be chopped by the electro-optical switch 3 to form a macro-pulse train with microsecond-order length and adjustable repetition frequency, wherein a macro-pulse chopping signal and a microwave starting signal are synchronous, the electro-optical driver 65 drives the electro-optical switch 3 to be powered on and powered off, and the frequency-locking electronics module 6 controls the electro-optical driver 65 to work according to an actual light path.
The macro-pulse string with adjustable repetition frequency enters a polarization beam splitter 8, the polarization beam splitter 8 divides the macro-pulse string with adjustable repetition frequency into first polarization laser and second polarization laser, and the first polarization laser enters a pulse string output switch module 9 to interfere with the power amplification laser, so that the power amplification laser is phase-locked on reference light.
The second polarized laser sequentially passes through the solid amplifier 4 and the frequency doubling module 5, and the peak power of the second polarized laser pulse is higher due to subsequent amplification, so that the optical fiber amplifier has stronger nonlinear effect and is easy to cause spectrum broadening, and therefore the solid amplifier 4 needs to adopt a neodymium-doped yttrium vanadate (Nd: YVO 4) crystal rod amplifier for further amplification to overcome the problem of high peak power of the laser pulse.
The frequency doubling module 5 comprises a frequency doubling crystal 51 and a frequency quadrupling crystal 52, the output end of the solid amplifier 4 is sequentially connected with the frequency doubling crystal 51 and the frequency quadrupling crystal 52, the frequency doubling crystal 51 adopts an LBO crystal, the frequency quadrupling crystal 52 adopts a BBO crystal, and the overall efficiency of the frequency quadrupling crystal 52 can reach about 10%.
The double-frequency crystal 51 and the quadruple-frequency crystal 52 both need to be kept at constant temperature to fully exert their functions, and as a preferred embodiment, the temperature of the double-frequency crystal 51 is controlled by a double-frequency temperature control system 66, and the temperature of the quadruple-frequency crystal 52 is controlled by a quadruple-frequency temperature control system 67, wherein the double-frequency temperature control system 66 and the quadruple-frequency temperature control system 67 are both electrically connected with the frequency-locking electronics module 6. The frequency doubling crystal 51 and the frequency quadrupling crystal 52 can also be arranged in a constant temperature control box to ensure constant temperature, so that the frequency doubling crystal 51 and the frequency quadrupling crystal 52 can keep a stable working state.
The method of use of the invention is described below:
the central wavelength of the mode-locked pulse laser emitted by the mode-locked oscillator 1 is 1064nm, 1030nm or 1550nm and other wavelengths capable of realizing stable mode locking. The types of the ytterbium-doped fiber 141 and the solid-state amplifier 4 may also be changed correspondingly when different wavelengths are selected.
The micro-pulse width is 10ps as an example, and the actual pulse width can be shorter to fs magnitude or longer to ns magnitude.
The frequency doubling mode is exemplified by frequency quadrupler crystal 52 from 1064nm to 266nm, and can be frequency tripled from 1064nm to 355 nm.
The optical fiber power amplifier 2 comprises a primary amplification light path 21, a secondary amplification light path 22 and a tertiary amplification light path 23 which are all three stages, and different amplification stages are selected according to the requirements of design output power of different systems.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.

Claims (10)

1. A frequency-locked deep ultraviolet ultrafast laser comprises a mode-locked oscillator (1) and an optical fiber power amplifier (2),
the mode locking oscillator (1) outputs mode locking pulse laser, and the mode locking pulse laser is amplified by the optical fiber power amplifier (2) and then outputs power amplified laser;
the method is characterized in that: the frequency-locked loop also comprises a solid amplifier (4), a frequency doubling module (5) and a frequency-locked electronic module (6);
the power amplified laser sequentially passes through a solid amplifier (4) and a frequency doubling module (5) and then outputs target laser;
and the frequency-locking electronic module (6) adjusts the optical fiber power amplifier (2) and the mode-locking oscillator (1).
2. The lock frequency deep ultraviolet ultrafast laser of claim 1, wherein: the photoelectric amplifier further comprises an electro-optical switch (3) and a photoelectric driver (65), wherein the photoelectric driver (65) drives the electro-optical switch (3) to be powered on and powered off, the electro-optical switch (3) is arranged between the optical fiber power amplifier (2) and the solid amplifier (4), and the output end of the electro-optical switch (3) is connected with the input end of the solid amplifier (4).
3. The lock frequency deep ultraviolet ultrafast laser of claim 1, wherein: the mode-locked oscillator (1) comprises a saturable absorber (11), piezoelectric ceramics (12), a chirped fiber Bragg grating (13), a wavelength division multiplexer (14) and a light splitting isolator (15), wherein the saturable absorber (11) is fixedly arranged on the movable piezoelectric ceramics (12); the output end of the piezoelectric ceramic (12) is connected with the chirped fiber Bragg grating (13), the output end of the chirped fiber Bragg grating (13) is connected with the wavelength division multiplexer (14), the output end of the wavelength division multiplexer (14) is connected with the light splitting isolator (15), and the light splitting isolator (15) outputs mode-locked pulse laser.
4. The lock frequency deep ultraviolet ultrafast laser of claim 1, wherein: the optical fiber power amplifier (2) comprises a primary amplification light path (21), a secondary amplification light path (22) and a tertiary amplification light path (23), and the output end of the wavelength division multiplexer (14) outputs power amplification laser after sequentially passing through the primary amplification light path (21), the secondary amplification light path (22) and the tertiary amplification light path (23).
5. The locked frequency duv ultrafast laser of claim 4, wherein: the primary amplification optical path (21) comprises a first circulator (211), a first beam combiner (212), a first high-reflection mirror (213) and a first semiconductor pump source (214), the first beam combiner (212) is arranged between the first circulator (211) and the first high-reflection mirror (213), and the first semiconductor pump source (214) excites the first beam combiner (212).
6. The locked frequency duv ultrafast laser of claim 4, wherein: the two-stage amplification optical path (22) comprises a second circulator (221), a second beam combiner (222), a second high-reflection mirror (223) and a second semiconductor pump source (224), the second beam combiner (222) is arranged between the second circulator (221) and the second high-reflection mirror (223), and the second semiconductor pump source (224) excites the second beam combiner (222).
7. The lock-frequency DUV ultrafast laser of claim 4, wherein: the three-stage amplification optical path (23) comprises a mode field adapter (231), a third beam combiner (232), a cladding light stripper (233), a third semiconductor pump source (234) and a fourth semiconductor pump source (235), the mode field adapter (231), the third beam combiner (232) and the cladding light stripper (233) are sequentially arranged, and the third beam combiner (232) is excited by the third semiconductor pump source (234) and the fourth semiconductor pump source (235) simultaneously.
8. The lock-frequency duv ultrafast laser of claim 7, wherein: the laser power amplifier is characterized by further comprising a beam splitter (7), a second photoelectric detector (62), a polarization beam splitter (8) and a pulse string output switch module (9), wherein power amplification laser enters the beam splitter (7) and is divided into first power amplification laser and second power amplification laser by the beam splitter (7), the first power amplification laser enters the second photoelectric detector (62), the second power amplification laser enters the polarization beam splitter (8), the polarization beam splitter (8) divides the second power amplification laser into first polarization laser and second polarization laser, the first polarization laser enters the pulse string output switch module (9), the second polarization laser sequentially passes through the solid amplifier (4) and the frequency doubling module (5), and the second photoelectric detector (62) is electrically connected with the frequency locking electronic module (6).
9. The lock-frequency duv ultrafast laser of claim 8, wherein: the frequency doubling module (5) comprises a frequency doubling crystal (51) and a frequency quadrupling crystal (52), and the output end of the solid amplifier (4) is sequentially connected with the frequency doubling crystal (51) and the frequency quadrupling crystal (52).
10. The locked frequency duv ultrafast laser of claim 9, wherein: the frequency locking electronic device is characterized by further comprising a first photoelectric detector (61), a photoelectron frequency stabilizing system (63), a feedback system (64), a frequency doubling temperature control system (66) and a frequency quadrupler temperature control system (67), wherein the frequency locking electronic module (6) is electrically connected with the first photoelectric detector (61), the photoelectron frequency stabilizing system (63), the feedback system (64), the frequency doubling temperature control system (66) and the frequency quadrupler temperature control system (67); the photoelectron frequency stabilization system (63) is electrically connected with the piezoelectric ceramic (12); the first photoelectric detector (61) is electrically connected with the light splitting isolator (15); the feedback system (64) is electrically connected with the third semiconductor pump source (234) and the fourth semiconductor pump source (235); the frequency doubling temperature control system (66) controls the temperature of the frequency doubling crystal (51), and the frequency quadrupling temperature control system (67) controls the temperature of the frequency quadrupling crystal (52).
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