CN115691903B - Preparation method of high-power-tolerance transparent conductive film and transparent conductive film - Google Patents
Preparation method of high-power-tolerance transparent conductive film and transparent conductive film Download PDFInfo
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Abstract
The embodiment of the invention discloses a preparation method of a high-power-tolerance transparent conductive film and the transparent conductive film. The method includes providing a substrate; placing a first sub-substrate of a coating clamp on one side of a substrate; the coating fixture comprises a first sub-substrate and a second sub-substrate, wherein the first sub-substrate is provided with a first evaporation hole, and the second sub-substrate is provided with a second evaporation hole; the orthographic projection of the first evaporation hole on the substrate is at least partially staggered with the orthographic projection of the second evaporation hole on the substrate; forming a first dielectric film on one side of the substrate adjacent to the first sub-substrate; removing the first sub-substrate; placing a second sub-substrate of the coating fixture on one side of the substrate adjacent to the first dielectric film; and forming a second dielectric film on the side of the substrate adjacent to the second sub-substrate. The electric field intensity distribution of the high-power-tolerance transparent conductive film prepared by the technical scheme provided by the embodiment is tuned, so that the transparent conductive film with the periodic structure is obtained, and the laser damage resistance of the high-power-tolerance transparent conductive film is improved.
Description
Technical Field
The embodiment of the invention relates to the technical field of film photoelectricity, in particular to a preparation method of a transparent conductive film with high power tolerance and the transparent conductive film.
Background
Transparent conductive materials have been widely used in the fields of solar cells, flat panel displays, organic light emitting diodes, low-emissivity glass, transparent thin film transistors, flexible electronic devices, and the like for a long time because of their good conductivity and high transmittance in the visible-near infrared light band. The transparent conductive film prepared by the existing preparation method of the transparent conductive film has the influence on the effective application of various optical devices in a high-power laser system due to the thermal effect and damage caused by the intrinsic absorption of materials.
Disclosure of Invention
The embodiment of the invention provides a preparation method of a high-power-tolerance transparent conductive film and the transparent conductive film, and aims to solve the problem that the high-power-tolerance transparent conductive film is influenced by the heat effect and damage caused by intrinsic absorption of materials and various optical devices are effectively applied to a high-power laser system.
In order to realize the technical problem, the invention adopts the following technical scheme:
according to an aspect of the present invention, an embodiment of the present invention provides a method for preparing a high power-tolerant transparent conductive film, including:
providing a substrate;
placing a first sub-substrate of a coating clamp on one side of the substrate; the coating fixture comprises a first sub-substrate and a second sub-substrate, wherein the first sub-substrate is provided with a first evaporation hole, and the second sub-substrate is provided with a second evaporation hole; the orthographic projection of the first evaporation hole on the substrate is at least partially staggered with the orthographic projection of the second evaporation hole on the substrate;
forming a first dielectric film on one side of the substrate adjacent to the first sub-substrate;
removing the first sub-substrate;
placing a second sub-substrate of a coating fixture on one side of the substrate adjacent to the first dielectric film;
and forming a second dielectric film on one side of the substrate adjacent to the second sub-substrate.
Optionally, the forming a first dielectric film on a side of the substrate adjacent to the first sub-substrate includes:
preparing a first dielectric film with a first preset thickness and periodic distribution on one side of the substrate adjacent to the first sub-substrate by adopting a physical vapor deposition technology in a vacuum environment;
the forming a second dielectric film on the side of the substrate adjacent to the second sub-substrate comprises:
preparing a second dielectric film with a second preset thickness and periodic distribution on one side of the substrate adjacent to the second sub-substrate by adopting a physical vapor deposition technology in a vacuum environment; wherein the orthographic projection of the first evaporation hole on the substrate is adjacent to and does not overlap with the orthographic projection of the second evaporation hole on the substrate; the first evaporation hole and the second evaporation hole are complementary in yin and yang.
Optionally, before the first sub-substrate is placed on one side of the substrate, the method further includes:
and carrying out ultrasonic cleaning and drying treatment on the substrate.
Optionally, the ultrasonic cleaning and drying process is performed on the substrate, and includes:
the ultrasonic cleaning comprises ultrasonic cleaning sequentially by acetone, alcohol and deionized water.
Optionally, the acetone, alcohol and deionized water are ultrasonically cleaned, and the cleaning time is 15min each time.
According to still another aspect of the present invention, an embodiment of the present invention provides a high power-tolerant transparent conductive film, including: the first dielectric film and the second dielectric film formed by the method for preparing the high-power-tolerance and high-power-tolerance transparent conductive film as set forth in any of the first aspect;
the first dielectric films are arranged in an array mode, and a hollow area is formed; the second dielectric film is positioned in the hollow area and is adjacent to the first dielectric film;
the high-power-tolerance transparent conductive film is used for conducting electricity and resisting laser damage.
Optionally, the thickness of the first dielectric film is equal to the thickness of the second dielectric film;
optionally, the thickness range of the high power transparent conductive film includes: 20nm-300nm.
Optionally, the range of the increase of the withstand power of the high-withstand-power transparent conductive film includes 10% to 500%.
According to the preparation method of the high-power-tolerance transparent conductive film, the first sub-substrate of the coating fixture is placed on one side of the substrate, the first dielectric film is formed on one side, adjacent to the first sub-substrate, of the substrate, and the first sub-substrate is removed. And placing a second sub-substrate of the coating fixture on one side of the substrate adjacent to the first dielectric film, and forming a second dielectric film on one side of the substrate adjacent to the second sub-substrate. The electric field intensity distribution of the high-power-tolerant transparent conductive film prepared by the preparation method of the high-power-tolerant transparent conductive film provided by the embodiment is tuned, and the high-power-tolerant transparent conductive film has the characteristic of high power tolerance. The preparation method of the high-power-tolerant transparent conductive film provided by the embodiment obtains the high-power-tolerant transparent conductive film with the periodic structure, improves the laser damage resistance of the high-power-tolerant transparent conductive film, and solves the problem that the high-power-tolerant transparent conductive film influences the effective application of various optical devices in a high-power laser system due to the heat effect and damage caused by intrinsic absorption of materials.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the contents of the embodiments of the present invention and the drawings without creative efforts.
FIG. 1 is a flow chart of a method for preparing a transparent conductive film with high power tolerance according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a coating fixture according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view along AA' of FIG. 2 of a coating fixture according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a second substrate structure of a coating jig according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a high power-tolerant transparent conductive film manufactured by using a coating fixture according to an embodiment of the present invention;
FIG. 6 is a diagram illustrating the results of a partial laser damage test on a high power transparent conductive film according to an embodiment of the present invention;
FIG. 7 is a flow chart of another method for preparing a high power transparent conductive film according to an embodiment of the present invention;
FIG. 8 is a flow chart of a method for preparing a high power transparent conductive film according to an embodiment of the present invention;
fig. 9 is a schematic diagram of a high power-tolerant transparent conductive film according to an embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Based on the above technical problem, the present embodiment proposes the following solutions:
the embodiment provides a coating clamp. The coating fixture is used for manufacturing the transparent conductive film with high power tolerance. Transparent conductive films with high power resistance are generally made of Indium Tin Oxide (ITO). Indium tin oxide is the mainstream transparent conductive material with high power resistance in the fields of touch and display at present. Indium tin oxide A typical composition is 90% indium oxide (In) 2 O 3 ) And 10% tin oxide (SnO) 2 ). The forbidden band width of indium tin oxide is more than 3.5 eV, and the resistivity is as low as 10 -4 Omega cm, unique optical characteristics such as ultraviolet cut-off (ultraviolet absorptivity is greater than 85%), high visible light transmittance (greater than 85% @550 nm), high infrared reflectivity and the like, and strong attenuation effect on microwaves. The high-tolerance power transparent conductive film has the effect that various optical devices are effectively applied to a high-power laser system due to the heat effect and damage caused by intrinsic absorption of materials.
The inventor finds that the reasonable surface heat functional structure not only increases the heat exchange area and induces turbulence to increase turbulent mixing, but also can reasonably organize the external convection structural form. The micro-nano composite structure is formed by preparing a periodic microstructure on the high-power-tolerant transparent conductive film layer. The micro-nano composite structure has the characteristics of both a micro structure and a nano structure, so that the periodic micro structure heat sink with the micro-nano composite structure realizes a micro-scale enhanced heat transfer process with higher strength, and achieves the purpose of enhancing heat conduction. The sub-wavelength structure has strong regulation and control characteristics on an electric field, and the damage threshold of the optical element can be improved by selecting a proper sub-wavelength structure through a mechanism of electric field intensity regulation and control. And obtaining the intensity distribution of the electromagnetic field of the high-tolerance power transparent conductive film through theoretical simulation, and determining parameters such as a period, a duty ratio and the like corresponding to the microstructure. The duty ratio of the evaporation hole of the coating clamp can be determined according to the corresponding parameters of the microstructure, such as the period, the duty ratio and the like.
Fig. 1 is a flowchart of a method for manufacturing a high power-tolerant transparent conductive film according to an embodiment of the present invention. On the basis of the above embodiment, referring to fig. 1, the present invention provides a method for preparing a transparent conductive film with high power tolerance, comprising:
s101, providing a substrate.
S102, placing a first sub-substrate of a coating clamp on one side of the substrate; the coating fixture comprises a first sub-substrate and a second sub-substrate, wherein the first sub-substrate is provided with a first evaporation hole, and the second sub-substrate is provided with a second evaporation hole; the orthographic projection of the first evaporation hole on the substrate is at least partially staggered with the orthographic projection of the second evaporation hole on the substrate.
And S103, forming a first dielectric film on one side of the substrate, which is adjacent to the first sub-substrate.
And S104, removing the first sub-substrate.
S105, placing a second sub-substrate of the coating fixture on one side, adjacent to the first dielectric film, of the substrate.
And S106, forming a second dielectric film on one side of the substrate, which is adjacent to the second sub-substrate.
In particular, the material of the substrate may comprise quartz or glass or a crystal. In the method for manufacturing a high-power-tolerant transparent conductive film provided by this embodiment, a first dielectric film is formed on a side of a substrate adjacent to a first sub-substrate, where the first dielectric film has a periodic structure. And forming a second dielectric film on one side of the substrate adjacent to the second sub-substrate, so that the second dielectric film has a periodic structure, and the first dielectric film and the second dielectric film jointly form a high-power-tolerant transparent conductive film.
In the method for preparing a high-power-tolerant transparent conductive film provided by this embodiment, a first sub-substrate of a coating fixture is placed on one side of the substrate, a first dielectric film is formed on one side of the substrate adjacent to the first sub-substrate, and the first sub-substrate is removed. And placing a second sub-substrate of the coating fixture on one side of the substrate adjacent to the first dielectric film, and forming a second dielectric film on one side of the substrate adjacent to the second sub-substrate. The electric field intensity distribution of the high-power-tolerant transparent conductive film prepared by the preparation method of the high-power-tolerant transparent conductive film provided by the embodiment is tuned, and the high-power-tolerant transparent conductive film has the characteristic of high power tolerance. The preparation method of the high-power-tolerant transparent conductive film provided by the embodiment obtains the high-power-tolerant transparent conductive film with the periodic structure, improves the laser damage resistance of the high-power-tolerant transparent conductive film, and solves the problem that the high-power-tolerant transparent conductive film has influence on the effective application of various optical devices in a high-power laser system due to the thermal effect and damage caused by intrinsic absorption of materials.
Optionally, fig. 2 is a schematic structural diagram of a plating jig provided in an embodiment of the present invention. Fig. 3 is a schematic cross-sectional view of a plating jig provided in an embodiment of the present invention, taken along the direction AA' in fig. 2. FIG. 4 is a schematic diagram of a second substrate structure of a coating jig according to an embodiment of the present invention. Fig. 5 is a schematic diagram of a high power-tolerant transparent conductive film manufactured by using a coating fixture according to an embodiment of the present invention. With reference to fig. 1 to 4, a film coating fixture provided by the embodiment of the present invention includes a substrate 1, a plurality of evaporation holes 2 disposed on the substrate 1, and the plurality of evaporation holes 2 are arranged in an array; the substrate 1 comprises a first surface 11 and a second surface 12 which are oppositely arranged, and the evaporation holes 2 penetrate from the first surface 11 to the second surface 12 along the thickness direction of the substrate 1; the substrate 1 includes a first sub-substrate 3 and a second sub-substrate 4; the evaporation holes 2 include a first evaporation hole 21 and a second evaporation hole 22; the first evaporation holes 21 are arranged on the first sub-substrate 3, and the second evaporation holes 22 are arranged on the second sub-substrate 4; the orthographic projection of the first evaporation hole 21 on the substrate 1 is at least partially staggered with the orthographic projection of the second evaporation hole 22 on the substrate 1.
Specifically, the first evaporation hole 21 is arranged on the first sub-substrate 3, the second evaporation hole 22 is arranged on the second sub-substrate 4, and the orthographic projection of the first evaporation hole 21 on the substrate 1 is at least partially staggered with the orthographic projection of the second evaporation hole 22 on the substrate 1, so that when a coating fixture is used for manufacturing a high-power-tolerance transparent conductive film, the first dielectric film 31 is deposited on a substrate through the first sub-substrate 3, and the second dielectric film 41 is deposited on the substrate on which the first dielectric film 31 is deposited through the second sub-substrate 4. Since the orthographic projection of the first evaporation hole 21 on the first sub-substrate 3 on the substrate 1 is at least partially staggered from the orthographic projection of the second evaporation hole 22 on the second sub-substrate 4 on the substrate 1, the first dielectric film 31 and the second dielectric film 41 are at least partially not overlapped, and the high-power-tolerant transparent conductive film meets the periodic structure. The electric field intensity distribution of the high-power-tolerance transparent conductive film prepared by the coating fixture is tuned, and the high-power-tolerance transparent conductive film with a periodic structure is finally obtained. The high-power-tolerance transparent conductive film prepared by the coating clamp provided by the embodiment has better performance of resisting laser damage, and can be applied to the fields of high-power-tolerance optical systems and the like.
The coating fixture provided by the embodiment comprises a first sub-substrate 3 and a second sub-substrate 4; the evaporation holes 2 include a first evaporation hole 21 and a second evaporation hole 22; the first evaporation holes 21 are arranged on the first sub-substrate 3, and the second evaporation holes 22 are arranged on the second sub-substrate 4; the orthographic projection of the first evaporation hole 21 on the substrate 1 is at least partially staggered with the orthographic projection of the second evaporation hole 22 on the substrate 1, the electric field intensity distribution of the high-power-tolerant transparent conductive film prepared by the coating clamp provided by the embodiment is tuned, the high-power-tolerant transparent conductive film with a periodic structure is finally obtained, the laser damage resistance of the high-power-tolerant transparent conductive film is improved, and the problems that the heat effect and damage of the high-power-tolerant transparent conductive film caused by material intrinsic absorption influence on effective application of various optical devices in a high-power laser system are solved.
Fig. 6 is a schematic diagram illustrating a test result of partial laser damage to a transparent conductive film with high power tolerance according to an embodiment of the present invention. On the basis of the above embodiment, referring to fig. 6, the present invention provides a method for preparing a transparent conductive film with high power tolerance, comprising: the coating fixture provided by any embodiment is adopted to form the transparent conductive film with high power resistance by evaporation.
Specifically, the high-power-tolerant transparent conductive film is formed by evaporation through the coating fixture provided by any embodiment, so that the electric field intensity distribution of the high-power-tolerant transparent conductive film is tuned, the high-power-tolerant transparent conductive film with a periodic structure is finally obtained, and the laser damage resistance of the high-power-tolerant transparent conductive film is improved.
It should be noted that fig. 6 exemplarily shows that the abscissa is the number of samples, and the ordinate is the laser damage threshold (LIDT). In which, sample 1 is a transparent conductive film prepared by a conventional manufacturing method. Sample 2 is the high power-tolerant transparent conductive film prepared by the method for preparing the high power-tolerant transparent conductive film provided by the embodiment of the present invention. As can be seen from fig. 6, the laser damage threshold (LIDT) of the sample 2 is greater than that of the sample 1, and the power tolerance of the high power tolerant transparent conductive film prepared by the method for preparing the high power tolerant transparent conductive film provided by the embodiment of the present invention is significantly improved. Wherein, sample 1: film material: indium Tin Oxide (ITO), the thickness of the film layer is 120nm, and the deposition process comprises the following steps: background vacuum: 5*10 -4 Pa, baking temperature of 250 ℃, deposition rate of 0.3nm/s, and one-time film coating by adopting a conventional tool, wherein the manufacturing method is electron beam evaporation. Sample 2: the coating is prepared by the first coating and the second coating. First coating of sample 2: film material: indium Tin Oxide (ITO), the thickness of the film layer is 120nm, and the deposition process comprises the following steps: background vacuum: 5*10 -4 Pa, the baking temperature is 250 ℃, the deposition rates are all 0.3nm/s, the first sub-substrate of the coating clamp provided by the embodiment of the invention shields the area needing coating for the second time, only the area which is not shielded by the first sub-substrate is coated, and the manufacturing method is electron beam evaporation. Second coating of sample 2: film material:silicon dioxide (SiO) 2 ) The thickness of the film layer is 120nm, and the deposition process comprises the following steps: background vacuum: 5*10 -4 Pa, the baking temperature is 250 ℃, the deposition rates are all 0.3nm/s, the second sub-substrate of the coating clamp provided by the embodiment of the invention is adopted to shield the area of the first coating, only the area which is not shielded by the second sub-substrate is coated, and the manufacturing method is electron beam evaporation.
The laser damage testing system shown in fig. 6 uses a 1064 nm continuous laser doped with neodymium-yttrium-aluminum-garnet (Nd: YAG) as the main light source, and the maximum output laser power is 300W. The red light emitted by a 632.8 nm helium-neon (He-Ne) laser is used as a collimated beam. YAG continuous laser beam passes through the total reflection mirror 1, and then coincides with the beam from He-Ne laser after passing through the collimating mirror (with reflection increasing for 632.8 nm beam and high reflection for 1064 nm beam). The light beam after passing through the collimating mirror reaches the beam splitter through the focusing lens. On the surface of the beam splitter, 1/1000 of laser energy is reflected to the total reflection mirror 2 and then is reflected to a photosensitive area of the beam quality analyzer by the total reflection mirror 2 so as to carry out beam quality analysis and measurement of the size of a light spot; the laser with 999/1000 energy passes through the beam splitter to reach the surfaces of the sample 1 and the sample 2, and is used for the laser irradiation research of the sample 1 and the sample 2. The laser damage test parameters are shown in table 1:
table 1 shows the laser damage test parameters
The testing national standard of the laser, the laser related equipment and the laser damage threshold testing method is as follows: GB/T16601.2-2017.
Optionally, fig. 7 is a flowchart of a method for manufacturing another high power-tolerant transparent conductive film according to an embodiment of the present invention. On the basis of the above embodiment, referring to fig. 7, the method for preparing a transparent conductive film with high power tolerance provided by the present invention comprises:
s101, providing a substrate.
S102, placing a first sub-substrate 3 on one side of the substrate.
S201, preparing a first dielectric film 31 with a first preset thickness and periodic distribution on one side of the substrate adjacent to the first sub-substrate 3 by adopting a physical vapor deposition technology in a vacuum environment.
And S104, removing the first sub-substrate 3.
S105, placing a second sub-substrate 4 on one side, adjacent to the first dielectric film 31, of the substrate; wherein the orthographic projection of the first evaporation hole on the substrate is adjacent to and does not overlap with the orthographic projection of the second evaporation hole on the substrate; the first evaporation hole and the second evaporation hole are complementary in yin and yang.
And S202, preparing a second dielectric film 41 with a second preset thickness and periodic distribution on one side of the substrate adjacent to the second sub-substrate 4 by adopting a physical vapor deposition technology in a vacuum environment.
Specifically, the first predetermined thickness and the second predetermined thickness may be the same, such that the thickness of the first dielectric film 31 is equal to the thickness of the second dielectric film 41.
Optionally, on the basis of the foregoing embodiment, with continuing reference to fig. 2 to fig. 5, an orthographic projection of the first evaporation hole 21 on the substrate 1 of the film plating fixture provided by the embodiment of the present invention is adjacent to and does not overlap an orthographic projection of the second evaporation hole 22 on the substrate 1; preferably, the first evaporation hole 21 and the second evaporation hole 22 are complementary to each other.
Specifically, the orthographic projection of the first evaporation hole 21 on the substrate 1 is adjacent to the orthographic projection of the second evaporation hole 22 on the substrate 1, and the first evaporation hole and the second evaporation hole are not overlapped, so that the first dielectric film 31 made of the first sub-substrate 3 and the second dielectric film 41 made of the second sub-substrate 4 are uniform in thickness, the impedance of the high-power-tolerance transparent conductive film is uniform, and the laser damage resistance of the high-power-tolerance transparent conductive film is further improved.
Through the arrangement of the first evaporation holes 21 and the second evaporation holes 22, which are complementary to each other in yin-yang manner, the first dielectric thin film 31 and the second dielectric thin film 41 which are prepared through the first evaporation holes 21 and the second evaporation holes 22 which are complementary to each other in yin-yang manner are uniform high-power-tolerance transparent conductive thin films with periodic structures, and the laser damage resistance of the high-power-tolerance transparent conductive thin films is further improved.
Optionally, with reference to fig. 2 to 5, on the basis of the foregoing embodiment, the evaporation hole 2 of the coating fixture provided in the embodiment of the present invention includes, in the range of the duty ratio of the substrate 1, 1-1; preferably, the shape of the evaporation hole 2 includes a triangle, a quadrangle or a curved shape.
Specifically, according to the arrangement, different duty ratios of the evaporation holes 2 on the substrate 1 can be selected according to different application scenes of the high-power-tolerance transparent conductive film, so that the requirement on the laser damage resistance of the high-power-tolerance transparent conductive film under different application scenes can be met. The shape of the evaporation hole 2 may include a triangle, a quadrangle, a curved polygon, etc., and the shape of the first evaporation hole 21 may be the same as or different from the shape of the second evaporation hole 22, which is not limited herein. It should be noted that, the electromagnetic field intensity distribution of the high-power-tolerant transparent conductive film can be obtained through theoretical simulation, and parameters such as the period and duty ratio of the coating fixture are determined. And manufacturing the coating clamp according to the determined parameters of the period, the duty ratio and the like of the coating clamp.
Optionally, on the basis of the foregoing embodiment, with reference to fig. 2 to 5, the sizes of the first sub-substrate 3 and the second sub-substrate 4 of the plating jig provided in the embodiment of the present invention are the same; and/or the thicknesses of the first sub-substrate 3 and the second sub-substrate 4 are equal; and/or the shape of the first evaporation hole 21 is the same as the shape of the second evaporation hole 22.
Specifically, the first sub-substrate 3 and the second sub-substrate 4 are arranged to be the same in size, so that alignment is conveniently performed when the high-power-tolerant transparent conductive film is manufactured. The thicknesses of the first sub-substrate 3 and the second sub-substrate 4 are equal, which facilitates the fabrication of the first sub-substrate 3 and the second sub-substrate 4. The shape of the first evaporation hole 21 is the same as that of the second evaporation hole 22, so that the first dielectric film 31 manufactured by the first sub-substrate 3 and the second dielectric film 41 manufactured by the second sub-substrate 4 are matched with each other to form the high-power-tolerant transparent conductive film with the periodic structure, and the laser damage resistance of the high-power-tolerant transparent conductive film is further improved.
Optionally, fig. 8 is a flowchart of a method for manufacturing another high-power-tolerant transparent conductive film according to an embodiment of the present invention. On the basis of the above embodiments, with reference to fig. 2 to 8, the method for preparing a high-power-tolerant transparent conductive film provided by the present invention includes:
s101, providing a substrate.
S301, carrying out ultrasonic cleaning and drying treatment on the substrate.
Specifically, the substrate is subjected to ultrasonic cleaning and drying treatment, so that the surface of the substrate is clean, and the quality of the manufactured high-tolerance power transparent conductive film is improved.
Optionally, the substrate is subjected to ultrasonic cleaning and drying treatment, including: the ultrasonic cleaning comprises ultrasonic cleaning sequentially by acetone, alcohol and deionized water.
Optionally, the acetone, the alcohol and the deionized water are ultrasonically cleaned, and the cleaning time is 15min each time.
S102, placing a first sub-substrate 3 on one side of the substrate.
And S103, forming a first dielectric film 31 on one side of the substrate adjacent to the first sub-substrate 3.
And S104, removing the first sub-substrate 3.
S105, placing a second sub-substrate 4 on a side of the substrate adjacent to the first dielectric film 31.
And S106, forming a second dielectric film 41 on one side of the substrate, which is adjacent to the second sub-substrate 4.
In an optional implementation manner, this embodiment provides a method for preparing a high-power-tolerant transparent conductive film, which includes using a physical vapor deposition method, sequentially performing ultrasonic cleaning on a substrate for 15min with acetone, alcohol and deionized water, and placing the substrate into a coating fixture of a first sub-substrate 3 with a certain duty ratio; when the vacuum degree of the film deposition system is better than 5 multiplied by 10 -4 And when Pa, depositing the first dielectric film 31 with a certain thickness and periodic distribution on the surface of the substrate by using a physical vapor deposition method. Replacing the coating clamp of the second sub-substrate 4 which is yin-yang complementary to the first sub-substrate 3 in the above steps, repeating the thin film deposition process, and depositing the high-power-tolerant transparent conductor with the same thicknessAn electrical thin film.
With reference to fig. 6, sample 1 is a continuous transparent conductive film with high power tolerance in the prior art, and sample 2 is a transparent conductive film with high power tolerance and periodic structure prepared by the method for preparing a transparent conductive film with high power tolerance provided in this embodiment. Fig. 6 is a comparison of the laser damage resistance of the high power transparent conductive film. It can be known that the high power transparent conductive film with a periodic structure prepared by the method for preparing a high power transparent conductive film provided by this embodiment has a characteristic of enhanced laser damage resistance in all high power transparent conductive films deposited within a process parameter range.
According to the preparation method of the high-power-tolerance transparent conductive film, the first dielectric film 31 and the second dielectric film 41 which are of periodic structures and have the same thickness are sequentially deposited by utilizing a physical vapor deposition technology, the electric field distribution tuning of the film element is obtained by adjusting the duty ratio of the coating clamp, and finally the laser damage resistance enhancement performance is realized. In addition, the preparation method of the high-power-tolerance transparent conductive film provided by the embodiment is simple to operate, short in preparation period, low in cost and remarkable in effect.
Fig. 9 is a schematic diagram of a high power-tolerant transparent conductive film according to an embodiment of the invention. On the basis of the above embodiments, referring to fig. 9, the high power transparent conductive film provided in the embodiments of the present invention includes the first dielectric film 31 and the second dielectric film 41 formed by the preparation method of the high power transparent conductive film provided in any of the above embodiments; the first dielectric films 31 are arranged in an array mode, and hollow areas are formed; the second dielectric film 41 is located in the hollow area and is adjacent to the first dielectric film 31; the transparent conductive film with high power resistance is used for conducting electricity and is resistant to laser damage.
Optionally, with continued reference to fig. 9, the thickness of the first dielectric film 31 is equal to the thickness of the second dielectric film 41.
Optionally, the thickness range of the high power transparent conductive film includes: 20nm-300nm.
Optionally, with continued reference to fig. 5 and 6, the range of the withstand power boost of the high withstand power transparent conductive film includes 10% to 500%.
Specifically, the thickness of the first dielectric film 31 is set to be equal to the thickness of the second dielectric film 41, so that the laser damage resistance of the high-power-tolerant transparent conductive film provided by the invention is enhanced. By adopting the preparation method of the transparent conductive film with high power tolerance and high power tolerance provided by any embodiment, the first dielectric film 31 and the second dielectric film 41 with periodic structures and the same thickness are sequentially deposited by using a physical vapor deposition technology. Optionally, the thickness range of the transparent conductive film with high power tolerance can be set to include: 20nm-300nm, the electric field distribution tuning of the high-tolerance power transparent conductive film can be further improved, and the laser damage resistance enhancement performance is realized.
The electric field distribution of the high-tolerance power transparent conductive film is tuned by adjusting the duty ratio of the evaporation hole of the coating clamp, and the laser damage resistance enhancement performance is finally realized.
The range of the increase of the tolerance power of the high-tolerance-power transparent conductive film prepared by the preparation method of the high-tolerance-power transparent conductive film provided by any embodiment is 10% -500%, the high-tolerance-power transparent conductive film improves the laser damage resistance of the high-tolerance-power transparent conductive film, avoids the heat effect and damage of the high-tolerance-power transparent conductive film caused by intrinsic absorption of materials, and improves the effective application of various optical devices in a high-power laser system.
It should be noted that, the range of the endurance enhancement of the high-endurance transparent conductive film provided in this embodiment is relative to the transparent conductive film prepared by the preparation method in the prior art. The tolerance power of the transparent conductive film prepared by the preparation method in the prior art is influenced by various factors such as a film forming process, a film forming material and the like, and is not a constant value. According to the embodiment of the invention, the preparation method of the high-power-tolerance transparent conductive film provided by any embodiment is adopted, and the prepared high-power-tolerance transparent conductive film is improved compared with the transparent conductive films with different power tolerances prepared by the preparation method in the prior art. The magnitude of the increase in the withstand power of the transparent conductive film for different withstand powers is different.
It is to be noted that the foregoing description is only exemplary of the invention and that the principles of the technology may be employed. Those skilled in the art will appreciate that the present invention is not limited to the particular embodiments described herein, and that various obvious changes, rearrangements and substitutions will now be apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in some detail by the above embodiments, the invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the invention, and the scope of the invention is determined by the scope of the appended claims.
Claims (7)
1. A preparation method of a transparent conductive film with high power tolerance is characterized by comprising the following steps:
providing a substrate;
placing a first sub-substrate of a coating clamp on one side of the substrate; the coating fixture comprises a first sub-substrate and a second sub-substrate, wherein the first sub-substrate is provided with a first evaporation hole, and the second sub-substrate is provided with a second evaporation hole; the orthographic projection of the first evaporation hole on the substrate is at least partially staggered with the orthographic projection of the second evaporation hole on the substrate;
forming a first dielectric film on one side of the substrate adjacent to the first sub-substrate;
removing the first sub-substrate;
placing a second sub-substrate of the coating fixture on one side of the substrate adjacent to the first dielectric film;
forming a second dielectric film on one side of the substrate adjacent to the second sub-substrate;
wherein the orthographic projection of the first evaporation hole on the substrate is adjacent to and does not overlap with the orthographic projection of the second evaporation hole on the substrate; the first evaporation hole and the second evaporation hole are complementary in negative and positive; the first dielectric films are arranged in an array mode and form hollow areas; the second dielectric film is positioned in the hollow area and is adjacent to the first dielectric film; the high-power-tolerance transparent conductive film is used for conducting electricity and resisting laser damage; the tolerance power promotion range of the high-tolerance-power transparent conductive film comprises 10% -500%; the first dielectric film and the second dielectric film are completely complementary in yin and yang, and the first dielectric film and the second dielectric film form a micro-nano composite structure; the thickness of the first dielectric film is equal to the thickness of the second dielectric film; the thickness range of the high-power-tolerant transparent conductive film comprises the following steps: 20nm-300nm; the laser damage resistance of the high-power-tolerance transparent conductive film is determined by the duty ratio of the first dielectric film to the second dielectric film; the first evaporation hole of the coating fixture comprises 1.
2. The method of claim 1, wherein forming a first dielectric film on a side of the substrate adjacent to the first submount comprises:
and preparing a first dielectric film with a first preset thickness and periodic distribution on one side of the substrate adjacent to the first sub-substrate by adopting a physical vapor deposition technology in a vacuum environment.
3. The method of claim 1, wherein forming a second dielectric film on a side of the substrate adjacent to the second submount comprises:
and preparing a second dielectric film with a second preset thickness and periodic distribution on one side of the substrate adjacent to the second sub-substrate by adopting a physical vapor deposition technology in a vacuum environment.
4. The method of claim 1, further comprising, before placing the first submount on one side of the substrate:
and carrying out ultrasonic cleaning and drying treatment on the substrate.
5. The method of claim 4, wherein said subjecting said substrate to an ultrasonic cleaning and drying process comprises:
the ultrasonic cleaning comprises ultrasonic cleaning sequentially by acetone, alcohol and deionized water.
6. The method of claim 5,
and ultrasonically cleaning the glass substrate by using acetone, alcohol and deionized water, wherein the cleaning time is 15min each time.
7. A high power tolerant transparent conductive film, comprising: the first dielectric film and the second dielectric film formed by the method for preparing the high-tolerance power transparent conductive film according to any one of claims 1 to 6;
the first dielectric films are arranged in an array mode and form hollow areas; the second dielectric film is positioned in the hollow area and is adjacent to the first dielectric film;
the high-power-tolerance transparent conductive film is used for conducting electricity and resisting laser damage; the tolerance power promotion range of the high-tolerance-power transparent conductive film comprises 10% -500%;
the first dielectric film and the second dielectric film are completely complementary in yin and yang, and the first dielectric film and the second dielectric film form a micro-nano composite structure; the thickness of the first dielectric film is equal to the thickness of the second dielectric film; the thickness range of the high-power-tolerant transparent conductive film comprises the following steps: 20nm-300nm; the laser damage resistance of the high-power-tolerance transparent conductive film is determined by the duty ratio of the first dielectric film to the second dielectric film; the first evaporation hole of the coating clamp comprises 1.
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