CN115555565A - Novel material alloy cutter and preparation method thereof - Google Patents
Novel material alloy cutter and preparation method thereof Download PDFInfo
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- CN115555565A CN115555565A CN202211165109.1A CN202211165109A CN115555565A CN 115555565 A CN115555565 A CN 115555565A CN 202211165109 A CN202211165109 A CN 202211165109A CN 115555565 A CN115555565 A CN 115555565A
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- cutter
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- 239000000956 alloy Substances 0.000 title claims abstract description 97
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 96
- 239000000463 material Substances 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title description 8
- 238000000576 coating method Methods 0.000 claims abstract description 77
- 239000011248 coating agent Substances 0.000 claims abstract description 70
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 44
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000002131 composite material Substances 0.000 claims abstract description 23
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 18
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000002994 raw material Substances 0.000 claims abstract description 11
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims abstract description 10
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000010941 cobalt Substances 0.000 claims abstract description 9
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052742 iron Inorganic materials 0.000 claims abstract description 9
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 9
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 9
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 63
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 40
- 238000001035 drying Methods 0.000 claims description 34
- 238000010438 heat treatment Methods 0.000 claims description 33
- 239000000843 powder Substances 0.000 claims description 32
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 30
- 229910002804 graphite Inorganic materials 0.000 claims description 30
- 239000010439 graphite Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 22
- 238000004140 cleaning Methods 0.000 claims description 20
- 238000001816 cooling Methods 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 15
- 229910052786 argon Inorganic materials 0.000 claims description 15
- 235000019441 ethanol Nutrition 0.000 claims description 15
- 238000003825 pressing Methods 0.000 claims description 15
- 238000001238 wet grinding Methods 0.000 claims description 15
- 238000005520 cutting process Methods 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 229910008484 TiSi Inorganic materials 0.000 claims description 10
- 238000011049 filling Methods 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 10
- 238000007733 ion plating Methods 0.000 claims description 9
- 238000005554 pickling Methods 0.000 claims description 9
- -1 graphite alkene Chemical class 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 238000005255 carburizing Methods 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 239000006185 dispersion Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000003801 milling Methods 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000007873 sieving Methods 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 239000013077 target material Substances 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- 238000001291 vacuum drying Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000005303 weighing Methods 0.000 claims description 5
- 239000011363 dried mixture Substances 0.000 claims description 4
- 230000007935 neutral effect Effects 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000012071 phase Substances 0.000 abstract description 11
- 238000005452 bending Methods 0.000 abstract description 4
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 4
- 238000012986 modification Methods 0.000 abstract description 3
- 230000004048 modification Effects 0.000 abstract description 3
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 12
- 238000012360 testing method Methods 0.000 description 4
- 229910009043 WC-Co Inorganic materials 0.000 description 3
- 238000007373 indentation Methods 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/02—Compacting only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
- B23B27/148—Composition of the cutting inserts
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C47/00—Making alloys containing metallic or non-metallic fibres or filaments
- C22C47/02—Pretreatment of the fibres or filaments
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C47/00—Making alloys containing metallic or non-metallic fibres or filaments
- C22C47/14—Making alloys containing metallic or non-metallic fibres or filaments by powder metallurgy, i.e. by processing mixtures of metal powder and fibres or filaments
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
- C22C49/02—Alloys containing metallic or non-metallic fibres or filaments characterised by the matrix material
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
- C22C49/14—Alloys containing metallic or non-metallic fibres or filaments characterised by the fibres or filaments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/20—Carburising
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
- B22F2003/1051—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding by electric discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
- B22F2003/241—Chemical after-treatment on the surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
- B22F2003/241—Chemical after-treatment on the surface
- B22F2003/242—Coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
- B22F2005/001—Cutting tools, earth boring or grinding tool other than table ware
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B2222/00—Materials of tools or workpieces composed of metals, alloys or metal matrices
- B23B2222/28—Details of hard metal, i.e. cemented carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B2228/00—Properties of materials of tools or workpieces, materials of tools or workpieces applied in a specific manner
- B23B2228/08—Properties of materials of tools or workpieces, materials of tools or workpieces applied in a specific manner applied by physical vapour deposition [PVD]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B2228/00—Properties of materials of tools or workpieces, materials of tools or workpieces applied in a specific manner
- B23B2228/10—Coatings
- B23B2228/105—Coatings with specified thickness
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B2228/00—Properties of materials of tools or workpieces, materials of tools or workpieces applied in a specific manner
- B23B2228/36—Multi-layered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B2228/00—Properties of materials of tools or workpieces, materials of tools or workpieces applied in a specific manner
- B23B2228/61—Materials comprising whiskers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a new material alloy cutter which comprises a base material layer and a carburized layer, wherein the carburized layer is arranged on the surface of the base material layer, a graphene-doped TiAISiN composite coating is deposited outside the carburized layer, and the base material layer comprises the following raw materials in parts by weight: 70 to 80 parts of tungsten carbide, 5 to 8 parts of titanium carbide, 3 to 5 parts of niobium carbide, 0.3 to 0.8 part of silicon carbide whisker, 4 to 6 parts of cobalt, 1 to 3 parts of nickel, 1 to 3 parts of iron and 3 to 5 parts of yttrium. According to the hard alloy of the alloy cutter base material layer, tungsten carbide, titanium carbide and niobium carbide are used as hard phases, cobalt, iron and nickel are used as composite bonding phases, and rare earth element yttrium and silicon carbide whiskers are added for modification, so that the high-temperature bending resistance of the base material is improved while the hardness of the base material is improved, the coating cutter can keep better mechanical property at high temperature through carburization treatment, graphene is doped in the coating, and the interface bonding capacity between the coating and a matrix and between the coating and the coating is improved.
Description
Technical Field
The invention relates to the technical field of industrial cutters, in particular to a novel material alloy cutter and a preparation method thereof.
Background
The high-speed cutting is widely applied to the processing field of difficult-to-process materials such as high-temperature alloy, titanium alloy, high-strength steel and the like. With the increase of the cutting speed, the cutting temperature near the cutting area is as high as 500-1000 ℃. Therefore, the cutter is very susceptible to oxidation during cutting, thereby causing structural changes and performance degradation of the cutter, resulting in a reduction in cutting life, and even severe wear and sudden fracture failure of the cutter. Therefore, the improvement of the oxidation resistance and the mechanical property of the cutter at high temperature is very important. The hard alloy is one of the most widely applied cutter materials at present, and the traditional WC-Co hard alloy is obviously oxidized at 600 ℃, so that the performance of the cutter is sharply reduced, and the cutting life of the cutter is shortened.
The surface of the cutter is plated with a high-hardness and wear-resistant coating, so that the service life of the cutter during cutting can be effectively prolonged, and the processing efficiency and quality are improved. The TiAIN coating has the advantages of high hardness, good wear resistance and the like, and is the mainstream cutter coating for industrial application at present. However, as the temperature of the cutting tool increases during cutting, the diffusion of Co element at the interface of the coating and the substrate is found to affect the structure of the coating, and further affect the hardness and wear resistance of the coating. Therefore, the problems to be solved urgently are to improve the high-temperature performance of the traditional WC-Co hard alloy and prolong the cutting life of the WC-Co hard alloy cutter.
Disclosure of Invention
In order to solve the problems mentioned in the background technology, the invention provides a new material alloy cutter and a preparation method thereof, the hard alloy of the base material layer of the alloy cutter takes tungsten carbide, titanium carbide and niobium carbide as hard phases, cobalt, iron and nickel as composite bonding phases, and rare earth element yttrium and silicon carbide whiskers are added for modification, so that the high-temperature bending resistance of the coated cutter can be improved while the hardness of the base material is improved, the carburization treatment enables the coated cutter to keep better mechanical properties at high temperature, and the coating is doped with graphene, so that the interface bonding capacity between the coating and a base body and between the coating and the coating is improved.
The purpose of the invention can be realized by the following technical scheme:
the invention provides a new material alloy cutter, which comprises a substrate layer and a carburized layer, wherein the carburized layer is arranged on the surface of the substrate layer, a graphene-doped TiAISiN composite coating is deposited outside the carburized layer, and the substrate layer comprises the following raw materials in parts by weight: 70 to 80 parts of tungsten carbide, 5 to 8 parts of titanium carbide, 3 to 5 parts of niobium carbide, 0.3 to 0.8 part of silicon carbide whisker, 4 to 6 parts of cobalt, 1 to 3 parts of nickel, 1 to 3 parts of iron and 3 to 5 parts of yttrium.
More preferably, the carburized layer has a gradient structure in which the content of Co element increases from the surface layer to the inner layer, and the thickness of the carburized layer is 500 to 800. Mu.m.
Further preferably, the graphene-doped TiAISiN composite coating comprises TiN, tiAIN and TiAISiN coatings, the thickness of the TiN coating is 100-200 mu m, the thickness of the TiAIN coating is 100-200 mu m, and the thickness of the TiAISiN coating is 200-300 mu m.
Further preferably, the diameter d of the silicon carbide whisker is more than 120nm, the length of the silicon carbide whisker is 10-20 μm, the silicon carbide whisker needs to be dispersed before use, and the dispersing treatment comprises the following steps:
(1) Firstly, silicon carbide whisker is mixed according to the solid-to-liquid ratio of 1: adding 8-10 parts of the mixture into 1-2 mol/L hydrofluoric acid for pickling for 12-24 hours, washing the mixture to be neutral by deionized water, and then putting the mixture into a constant-temperature drying oven to be heated to 70-90 ℃ for drying and drying to obtain silicon carbide whisker powder subjected to pickling treatment;
(2) Adding gamma-aminopropyltriethoxysilane into ethanol to prepare a gamma-aminopropyltriethoxysilane ethanol solution with the mass concentration of 0.5-1%, and then mixing the silicon carbide whisker powder subjected to acid washing in the step (1) according to a solid-to-liquid ratio of 1: 2-4, adding the mixture into the solution, performing ultrasonic dispersion and stirring for 2-4 hours, then putting the mixture into a blast drier, heating the mixture to 160-180 ℃, drying the mixture, and finally sieving the dried mixture by a 100-mesh sieve to obtain the silicon carbide crystal whisker subjected to dispersion treatment.
The invention also provides a preparation method of the new material alloy cutter, which comprises the following steps:
s1, weighing base material layer powder, adding the base material layer powder into a roller ball mill for wet milling, wherein a wet milling medium is absolute ethyl alcohol, a milling ball is a hard alloy ball, the granularity of the hard alloy ball is 10-20 mm, and heating slurry after wet milling in a vacuum drying oven at 90-110 ℃ for drying for 4-6 h;
s2, filling the ball-milled raw material powder into a graphite die, pressing a cutter blank by using a metal pressure head, filling a proper amount of landfill powder, pre-pressing by using the graphite pressure head through the same pressing process, and sintering in a discharge plasma furnace in a gradient heating mode to prepare a cutter blank;
and S3, polishing the cutter blank, cleaning the cutter blank by using alcohol, finally cleaning the cutter blank by using an ultrasonic cleaning machine, and drying the cutter blank in a drying oven at the set temperature of 80-00 ℃ to obtain the cutter refined blank.
S4, putting the refined blank of the cutter into a closed carburizing furnace, heating the furnace to 1300-1350 ℃, and introducing H 2 And CH 4 Keeping the mixed gas for 40-50 min, cooling along with the furnace, and taking out to obtain the alloy cutter containing the carburized layer;
and S5, sequentially preparing TiN, tiAIN and TiAISiN coatings on the carburized hard alloy cutter by a cathode arc ion plating process to form a graphene-doped TiAISiN composite coating, thus obtaining the new material alloy cutter.
Further preferably, the sintering in step S2 by using a gradient temperature rise method specifically includes: firstly heating to 550-650 ℃ at the speed of 5-10 ℃/min, preserving heat for 40-60 min, then heating to 1300-1500 ℃ at the speed of 15-20 ℃/min, preserving heat for 60-90 min, and finally cooling to room temperature along with the furnace.
Further preferably, H in the mixed gas in step S4 2 And CH 4 Is less than 40 to 60.
Further preferably, the coating materials required for preparing the graphene doped TiAISiN coating in the cathode arc ion plating process of the step S5 comprise a graphite target, a Ti target, an alloy AITi target and an alloy TiSi target, wherein the mass ratio of Ti to Al in the alloy AITi target is 2.
Further preferably, step S5 specifically includes:
s501, placing the alloy cutter subjected to carburization in the step S4 into a PVD furnace tube, adjusting the pressure range P to be less than 0.005mbar, and heating the furnace chamber to 400-500 ℃;
s502, introducing argon into a furnace chamber, adjusting the bias voltage of a substrate in an argon environment, and performing plasma etching cleaning at the pressure value of 700-800V for 3-5 min; setting a bias voltage of 700-950V, starting a Ti target and a TiSi target to carry out ion sputtering bombardment on the surface of a workpiece, and cleaning for 9-18 min;
s503, adjusting the bias voltage to 60-120V, stopping introducing the argon gas, and introducing N 2 And H 2 The flow of the introduced mixed gas is 150-300 ml/min, the vacuum degree range is controlled to be adjusted to 0.005-0.05 mbar, the target materials are sequentially electrified, and the graphene doped TiAISiN coating is deposited on the surface of the carburized alloy cutter;
and S504, cooling to 180 ℃ along with the furnace in vacuum, and then air-cooling to room temperature to obtain the new material alloy cutter.
Further preferably, N in step S503 2 And H 2 The volume ratio of the graphite target to the Ti target is 8And depositing for 30-45 s to obtain the graphene doped TiAISiN coating.
The invention has the beneficial effects that:
the hard alloy of the alloy cutter substrate layer takes tungsten carbide, titanium carbide and niobium carbide as hard phases, the addition of the niobium carbide can enable added rare metal carbide to be combined with the original hard phases WC and TiC to form a complex solid solution structure, the hard phase structure is strengthened, the growth of hard phase grains can be inhibited, the uniformity of the structure is enhanced, and therefore the comprehensive performance of the hard alloy is improved.
When the cemented carbide turning tool base material is carburized, the carburized medium is decomposed to form active C atoms, the concentration of the active C atoms on the surface of the alloy is high, the core part of the alloy is low, and the carbon concentration gradient distribution from the surface to the core part is formed. Meanwhile, the invention also adopts an arc ion plating process to deposit the graphene-doped TiAISiN composite coating on the surface of the carburized hard alloy cutter, and the addition of the graphene further improves the interface bonding performance among the composite layers.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
The utility model provides a new material alloy cutter, includes substrate layer and carburized layer, the carburized layer sets up on the substrate layer surface, the carburized layer is from the surface course to the gradient structure that this increases progressively of inlayer Co element content, the thickness of carburized layer is the 650 mu m carburized layer outer deposit graphite alkene doped TiAISI composite coating, graphite alkene doped TiAISI composite coating includes TiN, tiAIN and TiAISI coating, tiN coating thickness is 150 mu m, tiAIN coating thickness is 180 mu m, tiAISI coating thickness is 250 mu m.
The base material layer comprises the following raw materials in parts by weight: 75 parts of tungsten carbide, 6 parts of titanium carbide, 4 parts of niobium carbide, 0.5 part of silicon carbide whisker, 5 parts of cobalt, 2 parts of nickel, 2 parts of iron and 4 parts of yttrium. The diameter d =150nm and the length of the silicon carbide whisker are 15 μm, the silicon carbide whisker needs to be dispersed before use, and the dispersing treatment comprises the following steps:
(1) Firstly, silicon carbide whisker is mixed according to the solid-to-liquid ratio of 1:9, adding 1.5mol/L hydrofluoric acid for pickling for 18 hours, washing the silicon carbide crystal whisker to be neutral by deionized water, and then putting the silicon carbide crystal whisker into a constant-temperature drying box to be heated to 80 ℃ for drying and drying to obtain silicon carbide crystal whisker powder subjected to pickling treatment;
(2) Adding gamma-aminopropyltriethoxysilane into ethanol to prepare a gamma-aminopropyltriethoxysilane ethanol solution with the mass concentration of 0.8%, and then mixing the silicon carbide whisker powder subjected to acid washing in the step (1) according to a solid-to-liquid ratio of 1:3, adding the mixture into the solution, performing ultrasonic dispersion and stirring for 3 hours, then putting the mixture into a forced air drier, heating the mixture to 170 ℃, drying the mixture, and finally sieving the dried mixture by a 100-mesh sieve to obtain the silicon carbide whiskers subjected to dispersion treatment.
The preparation method of the new material alloy cutter comprises the following steps:
s1, weighing base material layer powder, adding the base material layer powder into a roller ball mill for wet milling, wherein a wet milling medium is absolute ethyl alcohol, a milling ball is a hard alloy ball, the granularity of the hard alloy ball is 15mm, and heating slurry after wet milling in a vacuum drying oven at 100 ℃ for drying for 5 hours;
s2, filling the ball-milled raw material powder into a graphite die, pressing a cutter blank by using a metal pressure head, filling a proper amount of landfill powder, pre-pressing by using the graphite pressure head by using the same pressing process, heating to 600 ℃ at the speed of 8 ℃/min in a discharge plasma furnace, preserving heat for 50min, heating to 1330 ℃ at the speed of 17 ℃/min, preserving heat for 75min, and cooling to room temperature along with the furnace to prepare a cutter blank;
and S3, polishing the cutter blank, cleaning the cutter blank by using alcohol, finally cleaning the cutter blank by using an ultrasonic cleaning machine, drying the cutter blank by using a drying oven, and setting the temperature to be 90 ℃ to obtain the finished cutter blank.
S4, placing the blank of the cutter refined blank into a closed carburizing furnace, heating the temperature in the furnace to 1320 ℃, and introducing H with the volume ratio of 50 2 And CH 4 Keeping the mixed gas for 45min, cooling along with the furnace, and taking out to obtain the alloy cutter containing the carburized layer;
s5, preparing TiN, tiAIN and TiAISiN coatings on the carburized hard alloy cutter in sequence by a cathode arc ion plating process to form a graphene-doped TiAISiN composite coating, which specifically comprises the following steps:
s501, placing the alloy cutter subjected to carburization in the step S4 into a PVD furnace tube, adjusting the pressure range P to be less than 0.005mbar, and heating a furnace chamber to 450 ℃;
s502, introducing argon into a furnace chamber, adjusting the bias voltage of a substrate in an argon environment, and carrying out plasma etching cleaning at a pressure value of 750V for 4min; setting a bias voltage of 800V, starting a Ti target and a TiSi target to carry out ion sputtering bombardment on the surface of the workpiece, and cleaning for 15min;
s503, adjusting the bias voltage to 90V, stopping introducing the argon gas, and introducing N with the volume ratio of 8 2 And H 2 The flow of the introduced mixed gas is 220ml/min, the vacuum degree range is controlled to be adjusted to 0.005-0.05 mbar, the target materials are sequentially electrified, the graphite target and the Ti target are firstly opened and deposited for 18s, then the graphite target and the alloy AITi target are opened and deposited for 20s, finally the graphite target, the alloy AITi target and the alloy TiSi target are opened and deposited for 35s, so that the graphene-doped TiAISI coating is obtained, and the graphene-doped TiAISI coating is deposited on the surface of the carburized alloy cutter;
and S504, cooling to 180 ℃ along with the furnace in vacuum, and then air-cooling to room temperature to obtain the new material alloy cutter.
Example 2
The utility model provides a new material alloy cutter, includes substrate layer and carburization layer, the carburization layer sets up on the substrate layer surface, the carburization layer is from the surface course to the gradient structure that this increases progressively of inlayer Co element content, the thickness of carburization layer is graphite alkene doping TiAISiN composite coating of 500 mu m carburization layer external deposition, graphite alkene doping TiAISiSiSiN composite coating includes TiN, tiAIN and TiAISiSiN coating, tiN coating thickness is 100 mu m, tiAIN coating thickness is 100 mu m, tiAISiSiSiSiN coating thickness is 200 mu m.
The base material layer comprises the following raw materials in parts by weight: 70 parts of tungsten carbide, 5 parts of titanium carbide, 3 parts of niobium carbide, 0.3 part of silicon carbide whisker, 4 parts of cobalt, 1 part of nickel, 1 part of iron and 3 parts of yttrium. The diameter d =120nm of the silicon carbide whisker and the length of the silicon carbide whisker are 10 μm, the silicon carbide whisker needs to be dispersed before use, and the dispersing treatment comprises the following steps:
(1) Firstly, silicon carbide whisker is mixed according to the solid-to-liquid ratio of 1:8, adding 1mol/L hydrofluoric acid for pickling for 12 hours, washing with deionized water to neutrality, then placing the mixture into a constant-temperature drying oven, heating to 70 ℃, and drying to obtain silicon carbide whisker powder subjected to pickling treatment;
(2) Adding gamma-aminopropyltriethoxysilane into ethanol to prepare a gamma-aminopropyltriethoxysilane ethanol solution with the mass concentration of 0.5%, and then mixing the silicon carbide whisker powder subjected to acid washing in the step (1) according to a solid-to-liquid ratio of 1:2, adding the mixture into the solution, performing ultrasonic dispersion and stirring for 2 hours, then putting the mixture into a blast drier, heating the mixture to 160 ℃, drying the mixture, and finally sieving the dried mixture by a 100-mesh sieve to obtain the silicon carbide whiskers subjected to dispersion treatment.
The preparation method of the novel material alloy cutter comprises the following steps:
s1, weighing base material layer powder, adding the base material layer powder into a roller ball mill for wet milling, wherein a wet milling medium is absolute ethyl alcohol, a milling ball is a hard alloy ball, the particle size of the hard alloy ball is 10mm,
heating the slurry after wet grinding in a vacuum drying oven at 90 ℃ for drying for 4h;
s2, filling the ball-milled raw material powder into a graphite die, pressing a cutter blank by using a metal pressure head, filling a proper amount of landfill powder, pre-pressing by using the graphite pressure head by using the same pressing process, heating to 550 ℃ at the speed of 5 ℃/min in a discharge plasma furnace, preserving heat for 40min, heating to 1300 ℃ at the speed of 15 ℃/min, preserving heat for 60min, and cooling to room temperature along with the furnace to prepare a cutter blank;
and S3, polishing the cutter blank, cleaning the cutter blank by using alcohol, finally cleaning the cutter blank by using an ultrasonic cleaning machine, drying the cutter blank by using a drying oven at the set temperature of 80 ℃ to obtain the finished cutter blank.
S4, placing the refined blank of the cutter into a closed carburizing furnace, heating the temperature in the furnace to 1300 ℃, and introducing H with the volume ratio of 40 2 And CH 4 Keeping the mixed gas for 40min, cooling along with the furnace, and taking out to obtain the alloy cutter containing the carburized layer;
s5, sequentially preparing TiN, tiAIN and TiAISiN coatings on the carburized hard alloy cutter by a cathode arc ion plating process to form a graphene-doped TiAISiN composite coating, so as to obtain the new material alloy cutter, which specifically comprises the following steps:
s501, placing the alloy cutter subjected to carburization in the step S4 into a PVD furnace tube, adjusting the pressure range P to be less than 0.005mbar, and heating the furnace chamber to 400 ℃;
s502, introducing argon into a furnace chamber, adjusting the bias voltage of a substrate in an argon environment, and carrying out plasma etching cleaning at a pressure value of 700V for 3min; setting a bias voltage of 700V, starting a Ti target and a TiSi target to carry out ion sputtering bombardment on the surface of the workpiece, and cleaning for 9min;
s503, adjusting the bias voltage to 60V, stopping introducing the argon gas, and introducing N with the volume ratio of 8 2 And H 2 Introducing the mixed gas, wherein the flow rate of the introduced mixed gas is 150ml/min, controlling the vacuum degree range to be adjusted to 0.005mbar, sequentially electrifying the target material, firstly opening the graphite target and the Ti target, depositing for 15s, then opening the graphite target and the alloy AITi target, depositing for 15s, finally opening the graphite target, the alloy AITi target and the alloy TiSi target, depositing for 35s to obtain a graphene-doped TiAISiN coating, and depositing the graphene-doped TiAISiN coating on the surface of the carburized alloy cutter;
and S504, cooling to 180 ℃ along with the furnace in vacuum, and then air-cooling to room temperature to obtain the new material alloy cutter.
Example 3
The utility model provides a new material alloy cutter, includes substrate layer and carburization layer, the carburization layer sets up on the substrate layer surface, the carburization layer is from the surface course to the gradient structure that inner layer Co element content increases progressively with this, the thickness of carburization layer is that the carburization layer deposits graphite alkene doped TiAISiN composite coating outward for 800 mu m, graphite alkene doped TiAISiSiN composite coating includes TiN, tiAIN and TiAISiN coating, tiN coating thickness is 200 mu m, tiAIN coating thickness is 200 mu m, tiAISiSiSiN coating thickness is 300 mu m.
The base material layer comprises the following raw materials in parts by weight: 80 parts of tungsten carbide, 8 parts of titanium carbide, 5 parts of niobium carbide, 0.8 part of silicon carbide whisker, 6 parts of cobalt, 3 parts of nickel, 3 parts of iron and 5 parts of yttrium. The diameter d =200nm of the silicon carbide whisker and the length of the silicon carbide whisker are 20 μm, the silicon carbide whisker needs to be dispersed before use, and the dispersing treatment comprises the following steps:
(1) Firstly, mixing silicon carbide whiskers according to a solid-to-liquid ratio of 1:10, adding 2mol/L hydrofluoric acid for pickling for 24 hours, washing the silicon carbide crystal whisker powder to be neutral by deionized water, and then putting the silicon carbide crystal whisker powder into a constant-temperature drying box to be heated to 90 ℃ for drying and drying to obtain pickled silicon carbide crystal whisker powder;
(2) Adding gamma-aminopropyltriethoxysilane into ethanol to prepare a gamma-aminopropyltriethoxysilane ethanol solution with the mass concentration of 1%, and then mixing the silicon carbide whisker powder subjected to acid washing treatment in the step (1) according to a solid-to-liquid ratio of 1:4, adding the silicon carbide crystal whisker into the solution, ultrasonically dispersing and stirring for 4 hours, then putting the solution into a blast drier, heating the solution to 180 ℃, drying the heated solution, and finally sieving the dried product by a 100-mesh sieve to obtain the silicon carbide crystal whisker subjected to dispersion treatment.
The preparation method of the new material alloy cutter comprises the following steps:
s1, weighing base material layer powder, adding the base material layer powder into a roller ball mill for wet milling, wherein a wet milling medium is absolute ethyl alcohol, a milling ball is a hard alloy ball, the particle size of the hard alloy ball is 20mm, and heating slurry after wet milling in a vacuum drying oven at 110 ℃ for drying for 6 hours;
s2, filling the ball-milled raw material powder into a graphite die, pressing a cutter blank by using a metal pressure head, filling a proper amount of landfill powder, pre-pressing by using the graphite pressure head by using the same pressing process, heating to 650 ℃ at the speed of 10 ℃/min, preserving heat for 60min, heating to 1500 ℃ at the speed of 20 ℃/min, preserving heat for 90min, and cooling to room temperature along with a furnace to prepare a cutter blank;
and S3, polishing the cutter blank, cleaning the cutter blank by using alcohol, finally cleaning the cutter blank by using an ultrasonic cleaning machine, and drying the cutter blank in a drying box at the set temperature of l00 ℃ to obtain a cutter refined blank.
S4, placing the refined blank of the cutter into a closed carburizing furnace, heating the temperature in the furnace to 1350 ℃, and introducing H with the volume ratio of 60 2 And CH 4 Keeping the mixed gas for 50min, cooling along with the furnace, and taking out to obtain the alloy cutter containing the carburized layer;
s5, preparing TiN, tiAIN and TiAISiN coatings on the cemented carbide tool in sequence by a cathode arc ion plating process to form a graphene-doped TiAISiN composite coating, and obtaining the new material alloy tool, wherein the process specifically comprises the following steps:
s501, placing the alloy cutter subjected to carburization in the step S4 into a PVD furnace tube, adjusting the pressure range P to be less than 0.005mbar, and heating a furnace chamber to 500 ℃;
s502, introducing argon into a furnace chamber, adjusting the bias voltage of a base body in an argon environment, carrying out plasma etching cleaning at the pressure value of 800V for 5min, setting the bias voltage of 950V, starting a Ti target and a TiSi target to carry out ion sputtering and bombarding the surface of a workpiece, and cleaning for 18min;
s503, adjusting the bias voltage to be 120V, stopping introducing the argon, and introducing N with the volume ratio of 8 2 And H 2 Introducing the mixed gas, wherein the flow of the introduced mixed gas is 300ml/min, controlling the vacuum degree range to be adjusted to 0.05mbar, sequentially electrifying the target material, firstly opening the graphite target and the Ti target, depositing for 30s, then opening the graphite target and the alloy AITi target, depositing for 30s, finally opening the graphite target, the alloy AITi target and the alloy TiSi target, depositing for 45s to obtain the graphene-doped TiAISiN coating, and depositing the graphene-doped TiAISiN coating on the surface of the carburized alloy cutter;
and S504, cooling to 180 ℃ along with the furnace in vacuum, and then air-cooling to room temperature to obtain the new material alloy cutter.
Base material detection:
EXAMPLES 1 to 3And calculating the alloy density of the cutter blank prepared in the step S2 by adopting an Archimedes drainage method, polishing, and then performing a hardness test by adopting an indentation method by using a Vickers hardness tester with the model of HVS-50, wherein a load of 30kgf is used in the test, and the pressure is maintained for 15S. The bending strength of the sample is measured on an electronic universal tester (AGS-X5 KN) by adopting a three-point bending resistance method, and the loading rate of the load with the span of 15mm set by the experiment is 0.5mm/min. Fracture toughness is a measure of indentation by vickers hardness, as determined by the formula:
∑L＝(L 1 -L 2 )+(L 3 -L 4 ) Is calculated, wherein HV 30 Is the Vickers hardness, L 1 ～L 4 Four crack lengths were produced at the indentation angles for the vickers hardness measurements. The data obtained are shown in table 1 below:
TABLE 1 alloy tool base material Performance test results
As can be seen from Table 1, the hard alloy of the substrate layer of the invention takes tungsten carbide, titanium carbide and niobium carbide as hard phases and cobalt, iron and nickel as composite bonding phases, so that the hard alloy has better high-temperature bending resistance, the addition of the rare earth element yttrium and the silicon carbide crystal whiskers can obviously improve the mechanical property of the hard alloy, and the addition of the rare earth element silicon carbide crystal whiskers as a toughening reinforcing phase of the hard alloy material greatly improves the mechanical property of the material.
And (3) detecting the coating:
the graphene-doped tiasin coating prepared in step S5 of examples 1-3 was tested for film-based binding force using a scratch method. The critical load was tested using a scratch tester (switzerland, revtest test) produced by the switzerland CSM company with a load of 100N, a scratch length of 3mm, and 2-3 scratches per sample. In the test process, under the action of a load, a needle point slides across the surface of the coating at the speed of 6mm/min until the coating slides through and exposes out of the substrate, and the critical load at the moment is Lc. The scratch threshold is generally divided into Lc1, lc2 and Lc3, and the value Lc2 of the coating edge peeling is generally used as a measure of the bonding force between the coating and the substrate. The data obtained are shown in table 2 below:
TABLE 2 detection of Membrane-based binding force
As can be seen from table 1, when the cemented carbide turning tool substrate is carburized, the graphene-doped tiassin composite coating is deposited on the surface of the carburized cemented carbide turning tool by the arc ion plating process, so that the interface bonding performance between the composite layers is improved.
While one embodiment of the present invention has been described in detail, the description is only a preferred embodiment of the present invention and should not be taken as limiting the scope of the invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. The utility model provides a new material alloy cutter, its characterized in that, the cutter includes substrate layer and carburization layer, and the carburization layer sets up on substrate layer surface, and the outer deposition graphite alkene of carburization layer mixes TiAISIN composite coating, the substrate layer includes following part by weight raw materials: 70 to 80 parts of tungsten carbide, 5 to 8 parts of titanium carbide, 3 to 5 parts of niobium carbide, 0.3 to 0.8 part of silicon carbide whisker, 4 to 6 parts of cobalt, 1 to 3 parts of nickel, 1 to 3 parts of iron and 3 to 5 parts of yttrium.
2. The new material alloy cutting tool as claimed in claim 1, wherein said carburized layer is a gradient structure with increasing Co element content from the surface layer to the inner layer, and the carburized layer has a thickness of 500-800 μm.
3. The new material alloy cutting tool as claimed in claim 1, wherein the graphene doped tiasin composite coating comprises TiN, tiAIN and tiasin coatings, the thickness of the TiN coating is 100-200 μm, the thickness of the TiAIN coating is 100-200 μm, and the thickness of the tiasin coating is 200-300 μm.
4. The new material alloy cutting tool as claimed in claim 1, wherein the diameter d of the silicon carbide whisker is more than 120nm, the length of the silicon carbide whisker is 10-20 μm, the silicon carbide whisker needs to be dispersed before use, and the dispersing treatment comprises the following steps:
(1) Firstly, silicon carbide whisker is mixed according to the solid-to-liquid ratio of 1: adding 8-10 parts of the mixture into 1-2 mol/L hydrofluoric acid for pickling for 12-24 hours, washing the mixture to be neutral by deionized water, and then putting the mixture into a constant-temperature drying oven to be heated to 70-90 ℃ for drying and drying to obtain silicon carbide whisker powder subjected to pickling treatment;
(2) Adding gamma-aminopropyltriethoxysilane into ethanol to prepare a gamma-aminopropyltriethoxysilane ethanol solution with the mass concentration of 0.5-1%, and then mixing the silicon carbide whisker powder subjected to acid washing treatment in the step (1) according to a solid-to-liquid ratio of 1: 2-4, adding the mixture into the solution, performing ultrasonic dispersion and stirring for 2-4 hours, then putting the mixture into a blast drier, heating the mixture to 160-180 ℃, drying the mixture, and finally sieving the dried mixture by a 100-mesh sieve to obtain the silicon carbide crystal whisker subjected to dispersion treatment.
5. A method for the production of a new material alloy tool according to any of claims 1-4, characterized in that it comprises the following steps:
s1, weighing base material layer powder, adding the base material layer powder into a roller ball mill for wet milling, wherein a wet milling medium is absolute ethyl alcohol, a milling ball is a hard alloy ball, the granularity of the hard alloy ball is 10-20 mm, and heating slurry subjected to wet milling in a vacuum drying oven at 90-110 ℃ for drying for 4-6 h;
s2, filling the ball-milled raw material powder into a graphite die, pressing a cutter blank by using a metal pressure head, filling a proper amount of landfill powder, pre-pressing by using the graphite pressure head through the same pressing process, and sintering in a discharge plasma furnace in a gradient heating mode to prepare a cutter blank;
and S3, polishing the cutter blank, cleaning the cutter blank by using alcohol, finally cleaning the cutter blank by using an ultrasonic cleaning machine, and drying the cutter blank in a drying oven at the set temperature of 80-l 00 ℃ to obtain a cutter refined blank.
S4, putting the refined blank of the cutter into a closed carburizing furnace, heating the furnace to 1300-1350 ℃, and introducing H 2 And CH 4 Keeping the mixed gas for 40-50 min, cooling along with the furnace, and taking out to obtain the alloy cutter containing the carburized layer;
and S5, sequentially preparing TiN, tiAIN and TiAISiN coatings on the carburized hard alloy cutter by a cathode arc ion plating process to form a graphene-doped TiAISiN composite coating, thus obtaining the new material alloy cutter.
6. The method for preparing the new material alloy cutter according to claim 5, wherein the step S2 of sintering by adopting a gradient temperature rise mode comprises the following specific steps: firstly heating to 550-650 deg.C at the rate of 5-10 deg.C/min, holding the temperature for 40-60 min, then heating to 1300-1500 deg.C at the rate of 15-20 deg.C/min, holding the temperature for 60-90 min, and finally cooling to room temperature along with the furnace.
7. The method for preparing the new material alloy cutter according to claim 5, wherein the H in the mixed gas in the step S4 2 And CH 4 The volume ratio of (a) to (b 1) is not 40 to 60.
8. The method for preparing the novel material alloy cutter according to the claim 5, wherein the coating material for preparing the graphene doped TiAISIN coating in the step S5 cathodic arc ion plating process comprises a graphite target, a Ti target, an alloy AITi target and an alloy TiSi target, wherein the mass ratio of Ti to Al in the alloy AITi target is 2.
9. The method for preparing the new material alloy cutter according to claim 5, wherein the step S5 is specifically as follows:
s501, placing the alloy cutter subjected to carburization in the step S4 into a PVD furnace tube, adjusting the pressure range P to be less than 0.005mbar, and heating the furnace chamber to 400-500 ℃;
s502, introducing argon into the furnace chamber, adjusting the bias voltage of the substrate in an argon environment, and carrying out plasma etching cleaning at a pressure value of 700-800V for 3-5 min; setting a bias voltage of 700-950V, starting a Ti target and a TiSi target to carry out ion sputtering bombardment on the surface of the workpiece, and cleaning for 9-18 min;
s503, adjusting the bias voltage to 60-120V, stopping introducing the argon gas, and introducing N 2 And H 2 The flow of the introduced mixed gas is 150-300 ml/min, the range of the vacuum degree is controlled to be adjusted to 0.005-0.05 mbar, the target materials are sequentially electrified, and the graphene-doped TiAISiN coating is deposited on the surface of the carburized alloy cutter;
and S504, cooling to 180 ℃ along with the furnace in vacuum, and then air-cooling to room temperature to obtain the new material alloy cutter.
10. The method for preparing new material alloy cutter according to claim 9, wherein N is in step S503 2 And H 2 The volume ratio of the graphite target to the Ti target is 8.
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| WO2022068812A1 (en) * | 2020-09-30 | 2022-04-07 | 全球能源互联网研究院有限公司 | Copper-tungsten alloy material, preparation method therefor, and application thereof |
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| CN112222405A (en) * | 2020-09-14 | 2021-01-15 | 蓬莱市超硬复合材料有限公司 | Preparation system and method of hard alloy cutter |
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