CN115377690B - Annular broadband circularly polarized on-chip antenna applied to millimeter wave vehicle-mounted radar - Google Patents
Annular broadband circularly polarized on-chip antenna applied to millimeter wave vehicle-mounted radar Download PDFInfo
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- 239000002184 metal Substances 0.000 claims abstract description 28
- 230000005855 radiation Effects 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 6
- 210000001624 hip Anatomy 0.000 claims description 14
- 239000000523 sample Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000002161 passivation Methods 0.000 claims description 4
- 230000010287 polarization Effects 0.000 abstract description 29
- 230000000694 effects Effects 0.000 abstract description 7
- 238000004891 communication Methods 0.000 abstract description 6
- 238000013461 design Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000012995 silicone-based technology Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/24—Polarising devices; Polarisation filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
Abstract
The invention belongs to the technical field of wireless communication, and particularly provides an annular broadband circularly polarized on-chip antenna applied to a millimeter wave vehicle-mounted radar, which is used for realizing the design of the circularly polarized on-chip antenna aiming at a 77GHz millimeter wave radar and improving the anti-interference capability in electromagnetic wave signal propagation; the annular broadband circularly polarized on-chip antenna of the invention comprises: the metal annular antenna 5 is arranged in the silicon dioxide layer, and the circular polarization performance of the wide bandwidth wave beam can be realized through the design of the annular radiation patch structure, the arc-shaped corner cut structure and the umbrella-like gap structure in the metal annular antenna, so that the on-chip antenna has the advantages of polarization mismatch resistance, faraday rotation resistance and the like, thereby reducing the influence of multipath effect, improving the anti-interference capability of the system and expanding the application range of the on-chip antenna.
Description
Technical Field
The invention belongs to the technical field of wireless communication, relates to millimeter wave integrated circuits and on-chip antenna technologies, and particularly provides a wide-bandwidth beam circular polarization on-chip antenna with a triangular gap and annular structure, which is applied to millimeter wave vehicle-mounted radar and is based on a 65nm CMOS technology.
Background
With the development of wireless technology, the frequency spectrum of the low frequency band is currently occupied in a large amount, and the requirements on the data transmission rate in various fields are also higher and higher, so that the communication and radar industry is gradually shifted to the millimeter wave frequency band with wider resources and even the terahertz frequency band in recent years. However, for devices operating in the high frequency band, the transmission loss is very large and the connection of separate active and passive structures, such as the connection between an amplifier and a conventional off-chip antenna, becomes increasingly difficult; the use of on-chip antennas is now becoming critical because it eliminates high loss wire interconnections between the rf front-end integrated circuit and the off-chip antenna; in the high frequency range, the size of the on-chip antenna and the mature CMOS silicon-based technology are small enough, so that the integration of the antenna and the radio frequency front end is also facilitated. Therefore, the research of the on-chip antenna technology has important significance for developing the communication and radar industry in China.
Although the on-chip antenna has various advantages and applications in some new research fields, the on-chip antenna brings about some problems to be solved; among them, the most important difficulty is that in modern CMOS processes, the performance of the on-chip antenna is deteriorated due to a large amount of loss caused by adverse factors such as low resistance and high dielectric constant characteristics of a common silicon substrate, and the gain and efficiency are generally low. In addition, in addition to studying how to improve the radiation performance of on-chip antennas, how to implement different functions on-chip antennas, such as how to implement circular polarization performance, is also being explored; circular polarized antennas are used in many fields, particularly in satellite communications, because of their excellent anti-interference capability, and can effectively solve the problems of polarization deflection and signal distortion caused by reflection, diffraction, etc. after electromagnetic wave signals are propagated through multipath.
On this basis, the applicant of the present invention has the following publication numbers: the patent document CN112909531A discloses an L-shaped wide-bandwidth wave beam circular polarization on-chip antenna applied to a millimeter wave frequency band, the 180nm CMOS technology is adopted to realize the wideband circular polarization on-chip antenna of a60 GHz millimeter wave frequency band, and the 60GHz frequency band is mainly used in the communication field and can realize ultra-high-speed wireless transmission. However, the working frequency bands of the millimeter wave radar for the vehicle are mainly divided into 21.65-26.65 GHz and 76-81 GHz, and the working frequencies of main stream vehicles on the market are all near three frequencies of 24GHz, 77GH and 79 GHz; the product system of the 24GHz millimeter wave radar is relatively mature, and the market is relatively saturated, so that each large manufacturer gradually looks at the 76-81 GH z frequency band with huge development potential so as to develop new market and opportunity, and the 77GHz millimeter wave radar has become the main stream in the industry; for the circularly polarized on-chip antenna of the 77GHz vehicle-mounted radar frequency band, the L-shaped radiation patch in the patent document is difficult to realize, because the problem of serious mismatch of resonant frequency and axial ratio bandwidth can occur at higher frequency, and even if the frequency band width can cover 76 GHz-81 GHz, the requirement of circular polarization cannot be met in the frequency band. Therefore, a new structure is required to be designed to achieve wideband circular polarization performance of the 77GHz band on-chip antenna.
Disclosure of Invention
The invention aims to design a circular polarization on-chip antenna for a 77GHz millimeter wave radar and improve the anti-interference capability in electromagnetic wave signal propagation, and provides an annular broadband circular polarization on-chip antenna applied to a millimeter wave vehicle-mounted radar; more specifically, the invention provides a wide bandwidth wave beam circular polarization on-chip antenna with umbrella-like gap and ring structure, which is applied to millimeter wave frequency band based on 65nm CMOS technology, on one hand, can emit circular polarization electromagnetic wave signals working at 76 GHz-81 GHz, and on the other hand, can receive electromagnetic wave signals with different polarizations, thereby reducing adverse effects caused by multipath effect and having the advantage of improving the anti-interference capability of the system.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
An annular broadband circularly polarized on-chip antenna applied to millimeter wave vehicle-mounted radar, comprising: a metal grounding layer 1, a silicon substrate layer 2, a silicon dioxide layer 3 and a passivation layer 4 which are sequentially laminated from bottom to top; wherein, be provided with metal loop antenna 5 in the silica layer, metal loop antenna includes: an annular radiation patch 7, a microstrip line 8 and a GSG probe interface 9; it is characterized in that the method comprises the steps of,
The annular radiation patch 7 is formed by splicing a pentagonal patch 7-1 and a right trapezoid patch 7-2;
the pentagonal patch 7-1 is formed by splicing a first isosceles triangle patch 7-1-1, a second isosceles triangle patch 7-1-2, a third isosceles triangle patch 7-1-3 and a fourth isosceles triangle patch 7-1-4, wherein the edge of the pentagonal patch 7-1 connected with the microstrip line 8 is a first edge and is sequentially a second edge to a fifth edge along the anticlockwise direction, the first edge and the second edge are both the waist of the first isosceles triangle patch, the third edge is the waist of the second isosceles triangle patch, the fourth edge is the waist of the third isosceles triangle patch, and the fifth edge is the bottom edge of the fourth isosceles triangle patch; an umbrella-like gap 6 is formed in the pentagonal patch 7-1;
The upper bottom edge of the right trapezoid patch 7-2 is spliced on the first edge of the pentagonal patch 7-1, the obtuse vertex is positioned at the joint of the first edge and the fifth edge of the pentagonal patch, and a rectangular gap is formed between the right-angle waist of the right trapezoid patch and the microstrip line 8;
first to fifth arc chamfer angles are sequentially formed on the first to fifth edges of the pentagonal patch, and a sixth arc chamfer angle is formed on the lower bottom edge of the right trapezoid patch.
Further, in the pentagonal patch, the opening angle of each isosceles triangle patch is 80 °, and the size ratio of the first isosceles triangle patch to the fourth isosceles triangle patch is 9:5:6:8.
Further, the umbrella-like gap is formed by splicing an inverted L-shaped gap 6-1 and an isosceles triangle gap 6-2; the bottom edges of the isosceles triangle gaps are spliced on the short sides of the inverted-L-shaped gaps, and the long sides of the inverted-L-shaped gaps are overlapped with the rectangular gaps.
Further, the third arc-shaped chamfer meets the curve equation y= |x| 3, -0.9< x <1, and the rest arc-shaped chamfers are all arc-shaped chamfers; the radius ratio of the first, second, fourth, fifth and sixth arc-shaped chamfer is as follows: 4.4:2.7:2.5:3.2:2.9; the tail ends of the first arc-shaped cut angles are respectively positioned at the joint of the first side and the second side of the pentagonal patch and the joint of the first side and the microstrip line 8 of the pentagonal patch, and the tail ends of the other arc-shaped cut angles are overlapped with the end points of the corresponding sides.
Further, the annular radiation patch is connected with the signal end of the GSG probe interface through the microstrip line, the grounding end of the GSG probe interface is respectively provided with a rectangular metal patch (10), and the annular radiation patch and the rectangular metal patch form a coplanar waveguide structure together through the microstrip line and are fed by the GSG probe interface.
The invention has the beneficial effects that:
the invention provides an annular broadband circular polarized on-chip antenna applied to a millimeter wave vehicle-mounted radar, which mainly can realize the circular polarization performance of a broadband wave beam through the design of a radiation patch structure, an arc-shaped chamfer structure and an umbrella-like gap structure, so that the on-chip antenna has the advantages of polarization mismatch resistance, faraday rotation resistance and the like, thereby reducing the influence of multipath effect, improving the anti-interference capability of a system and expanding the application range of the on-chip antenna.
Drawings
Fig. 1 is a schematic structural diagram of an annular broadband circularly polarized on-chip antenna applied to a millimeter wave vehicle-mounted radar in the invention.
Fig. 2 is a schematic structural diagram of a metal loop antenna in the loop broadband circularly polarized on-chip antenna shown in fig. 1.
Fig. 3 is a schematic structural diagram of a loop radiation patch in the metal loop antenna shown in fig. 2.
Fig. 4 is a schematic structural view of a pentagonal patch in the annular radiating patch shown in fig. 3.
Fig. 5 is a schematic structural view of an umbrella-like slot in the metal loop antenna shown in fig. 2.
Fig. 6 is a schematic diagram of a layered structure of an annular broadband circularly polarized on-chip antenna of a millimeter wave vehicle-mounted radar in a 65nm cmos process according to an embodiment of the present invention.
Fig. 7 is a graph showing the reflection coefficient of an antenna on a circular broadband circularly polarized patch of a millimeter wave vehicle radar according to an embodiment of the present invention.
Fig. 8 is a gain result diagram of an antenna on a circular broadband circularly polarized patch of the millimeter wave vehicle-mounted radar in an embodiment of the invention.
Fig. 9 is a diagram showing the axial ratio of the antenna on the circular broadband circularly polarized patch of the millimeter wave vehicle-mounted radar according to the embodiment of the invention.
Fig. 10 is a graph of the result of circularly polarized beam width of an antenna on a circular broadband circularly polarized patch of a millimeter wave vehicle-mounted radar in an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantageous effects of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and examples.
The embodiment provides an annular broadband circularly polarized on-chip antenna applied to a millimeter wave vehicle-mounted radar, the structure of which is shown in fig. 1, and the antenna specifically comprises: a metal grounding layer 1, a silicon substrate layer 2, a silicon dioxide layer 3 and a passivation layer 4 which are sequentially laminated from bottom to top; wherein, a metal annular antenna 5 is arranged in the silicon dioxide layer 3; as shown in fig. 2, the metal loop antenna 5 specifically includes: annular radiation patch 7, microstrip line 8 and GSG probe interface 9, annular radiation patch pass through the signal end that the microstrip line connects GSG probe interface, and the ground connection of GSG probe interface sets up rectangle metal patch 10 respectively, and slotted annular radiation patch passes through microstrip line and rectangle metal patch and constitutes coplanar waveguide structure jointly, feeds by GSG probe interface.
Further, as shown in fig. 3, the annular radiation patch 7 is formed by splicing a pentagonal patch 7-1 and a right trapezoid patch 7-2;
The pentagonal patch 7-1 is shown in fig. 4, and is formed by splicing a first isosceles triangle patch 7-1-1, a second isosceles triangle patch 7-1-2, a third isosceles triangle patch 7-1-3 and a fourth isosceles triangle patch 7-1-4, wherein the opening angle of each isosceles triangle patch is about 80 degrees, and the size ratio of the first isosceles triangle patch to the fourth isosceles triangle patch is 10:5:6.5:8; the sides of the pentagonal patch 7-1 connected with the microstrip line 8 are a first side and are sequentially a second side to a fifth side along the anticlockwise direction, wherein the first side and the second side are the waists of the first isosceles triangle patch, the third side is the waists of the second isosceles triangle patch, the fourth side is the waists of the third isosceles triangle patch, and the fifth side is the bottom edge of the fourth isosceles triangle patch;
The upper bottom edge of the right trapezoid patch 7-2 is spliced on the first edge of the pentagonal patch 7-1, the obtuse vertex is positioned at the joint of the first edge and the fifth edge of the pentagonal patch, and a rectangular gap is formed between the right-angle waist of the right trapezoid patch and the microstrip line 8;
An umbrella-like gap 6 is formed in the pentagonal patch 7-1, and the umbrella-like gap 6 is formed by splicing an inverted L-shaped gap 6-1 and an isosceles triangle gap 6-2 as shown in fig. 5; the bottom edges of the isosceles triangle gaps are spliced on the short sides of the gamma-shaped gaps, and the long sides of the gamma-shaped gaps are overlapped with the rectangular gaps (positioned on the same straight line and equal in width);
First to fifth arc-shaped chamfer angles are sequentially formed on the first to fifth edges of the pentagonal patch, and a sixth arc-shaped chamfer angle is formed on the lower bottom edge of the right trapezoid patch; the third arc-shaped cutting angle meets a curve equation y= |x| 3, -0.9< x <1, and the rest arc-shaped cutting angles are arc-shaped cutting angles; the radius ratio of the first, second, fourth, fifth and sixth arc-shaped chamfer is as follows: 4.4:2.7:2.5:3.2:2.9; the tail ends of the first arc-shaped cut angles are respectively positioned at the joint of the first side and the second side of the pentagonal patch and the joint of the first side and the microstrip line 8 of the pentagonal patch, and the tail ends of the other arc-shaped cut angles are overlapped with the end points of the corresponding sides.
It should be noted that: aiming at the third arc-shaped chamfer, when the curve equation met by the arc is determined, scaling to be combined with a preset endpoint in an equal ratio mode, the unique arc-shaped chamfer can be obtained; aiming at all the arc chamfer angles, when the radius of a circle is determined, the unique arc chamfer angle can be obtained by combining with a preset endpoint; in addition, the sizes of the inverted L-shaped gap and the isosceles triangle gap in the umbrella-shaped gap can be adaptively matched and adjusted according to practical application requirements.
More specifically, the overall size of the antenna on the annular broadband circularly polarized sheet applied to the millimeter wave vehicle-mounted radar in the embodiment is 0.9mm multiplied by 1.05mm; specifically, a 65nm CMOS process is adopted, the layered structure of the process is shown in figure 6, and the layer height H1 of the silicon substrate layer 2 is 304.8um; the metal layers in the silicon dioxide layer 3 are 9, the metal loop antenna 5 is manufactured with the metal layer at the top layer, and the thickness is the largest and the distance from the silicon substrate layer 2 with low resistance is the farthest (H2 is 5.375 um), so that the current loop loss and the surface wave loss formed between the metal loop antenna and the silicon substrate layer can be reduced, and the performance of the on-chip antenna is improved to a certain extent; the antenna gain can be further improved by reflecting part of beam energy radiated downwards by the metal grounding layer 1, the passivation layer 4 can completely separate the bottom material from the outside, and the metal is prevented from being contacted with corrosive media, so that the anti-corrosion effect is achieved.
Further, in the pentagonal patch 7-1 of the annular radiating patch of the metal annular antenna, the waist lengths of the first to fourth isosceles triangle patches are 480um, 240um, 312um and 384um in sequence; the height of the right trapezoid patch 7-2 is 214um, the upper bottom edge is 154um, and the lower bottom edge is 218um; in the umbrella-like gap 6, the long side of the gap in the shape of the Chinese character 'gamma' is 481um, the short side of the gap in the shape of the Chinese character 'gamma' is 127um, the gap width is 20um (the same as the rectangular gap), the bottom side of the isosceles triangle gap is the same as the short side of the gap in the shape of the Chinese character 'gamma', and the waist length is 100um; the radiuses of the first, second, fourth, fifth and sixth arc-shaped chamfer are 440um, 270um, 250um, 320um and 290um in sequence; the length of the microstrip line 8 is 450um, the width is suddenly changed from 42um (75 um) to 46um (375 um), and the change of the width can change the impedance of the microstrip line, thereby being beneficial to improving the impedance bandwidth and the axial ratio performance of the antenna; the standard gap between the GSG probe interfaces 9 is 100um, so that the insertion feed and the subsequent performance test of the test bench probes are facilitated; the rectangular metal patches 10 are each 375um×220um in size.
Simulation tests are carried out on the annular broadband circularly polarized on-chip antenna in the embodiment, and the results are shown in fig. 7-10; specifically:
As shown in fig. 7, which shows a reflection coefficient result diagram of the antenna on the circular broadband circularly polarized sheet, the bandwidth of S11 is very large, -10dB covers a frequency band from 57GHz to 100GHz, has a relative bandwidth of more than 55%, has broadband characteristics, wherein the minimum of S11 occurs at 72.8GHz, the minimum is-26.6 dB, and the S11 in the 76GHz-81GHz vehicle millimeter wave radar frequency band is less than-18 dB;
as shown in fig. 8, which shows a gain result diagram of the antenna on the circular polarization sheet with the annular broadband, the gain is gradually increased along with the increase of the frequency, the frequency is from 76GHz to 81GHz, and the gain is increased from-2.9 dBi to-2.2 dBi;
As shown in FIG. 9, the axial ratio result diagram of the antenna on the annular broadband circular polarization sheet shows that the 3dB axial ratio bandwidth completely covers the vehicle-mounted radar frequency band of 76 GHz-81 GHz, the axial ratio at 76GHz is 2.95dB, the axial ratio at 81GHz is 2.18dB, the broadband circular polarization sheet has broadband circular polarization characteristics, and the axial ratio performance close to 0dB is achieved at 78.8GHz, so that the broadband circular polarization sheet has very good circular polarization performance;
As shown in fig. 10, which is a graph of the result of the circular polarization beam width of the antenna on the circular broadband circular polarization sheet, at 78.8GHz, the axial ratio is less than 3dB from-53 ° to 67 °, which indicates that the antenna has a wide-beam circular polarization characteristic;
In summary, the invention realizes the broadband performance of the S11 parameter, the broadband performance of the axial ratio and the broadband performance of the circular polarization, and the circular polarization performance of the antenna completely covers the 77GHz vehicle-mounted radar frequency band, while the circular polarization electromagnetic wave has the advantages of polarization mismatch resistance, faraday rotation resistance and the like, can reduce the influence of multipath effect, improves the anti-interference capability of the system, and ensures that the on-chip antenna has larger application range and potential.
While the invention has been described in terms of specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the equivalent or similar purpose, unless expressly stated otherwise; all of the features disclosed, or all of the steps in a method or process, except for mutually exclusive features and/or steps, may be combined in any manner.
Claims (3)
1. An annular broadband circularly polarized on-chip antenna applied to millimeter wave vehicle-mounted radar, comprising: a metal grounding layer (1), a silicon substrate layer (2), a silicon dioxide layer (3) and a passivation layer (4) which are sequentially laminated from bottom to top; wherein, be provided with metal loop antenna (5) in the silica layer, metal loop antenna includes: the device comprises an annular radiation patch (7), a microstrip line (8) and a GSG probe interface (9); it is characterized in that the method comprises the steps of,
The annular radiation patch (7) is formed by splicing a pentagonal patch (7-1) and a right trapezoid patch (7-2);
The pentagonal patch (7-1) is formed by splicing a first isosceles triangle patch (7-1-1), a second isosceles triangle patch (7-1-2), a third isosceles triangle patch (7-1-3) and a fourth isosceles triangle patch (7-1-4), the edge of the pentagonal patch (7-1) connected with the microstrip line (8) is a first edge, and the edges are sequentially a second edge to a fifth edge along the anticlockwise direction, wherein the first edge and the second edge are the waists of the first isosceles triangle patch, the third edge is the waists of the second isosceles triangle patch, the fourth edge is the waists of the third isosceles triangle patch, and the fifth edge is the bottom edge of the fourth isosceles triangle patch; an umbrella-like gap (6) is formed in the pentagonal patch; the umbrella-like gap is formed by splicing a gap (6-1) in a shape of a Chinese character 'gamma' and an isosceles triangle gap (6-2), the bottom edge of the isosceles triangle gap is spliced on the short edge of the gap in a shape of the Chinese character 'gamma', and the long edge of the gap in a shape of the Chinese character 'gamma' is overlapped with the rectangular gap;
the upper bottom edge of the right trapezoid patch (7-2) is spliced on the first edge of the pentagon patch (7-1), the obtuse angle vertex is positioned at the joint of the first edge and the fifth edge of the pentagon patch, and a rectangular gap is formed between the right-angle waist of the right trapezoid patch and the microstrip line (8);
First to fifth arc-shaped chamfer angles are sequentially formed on the first to fifth edges of the pentagonal patch, and a sixth arc-shaped chamfer angle is formed on the lower bottom edge of the right trapezoid patch; the third arc-shaped chamfer satisfies the curve equation -0.9< X <1, the remaining arc-shaped cut angles being arc-shaped cut angles; the radius ratio of the first, second, fourth, fifth and sixth arc-shaped chamfer is as follows: 4.4:2.7:2.5:3.2:2.9; the tail ends of the first arc-shaped cut angles are respectively positioned at the joint of the first side and the second side of the pentagonal patch and the joint of the first side and the microstrip line (8) of the pentagonal patch, and the tail ends of the other arc-shaped cut angles are coincident with the end points of the corresponding sides.
2. The circular broadband circularly polarized on-chip antenna for millimeter wave vehicle radar of claim 1, wherein the opening angle of each isosceles triangle patch is 80 ° and the size ratio of the first to fourth isosceles triangle patches is 9:5:6:8.
3. The annular broadband circularly polarized on-chip antenna applied to the millimeter wave vehicle-mounted radar according to claim 1, wherein the annular radiation patch is connected with a signal end of the GSG probe interface through a microstrip line, the grounding end of the GSG probe interface is respectively provided with a rectangular metal patch (10), and the annular radiation patch and the rectangular metal patch form a coplanar waveguide structure together through the microstrip line and are fed by the GSG probe interface.
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