CN115233189B - Gas homogenizing device and semiconductor process equipment - Google Patents

Gas homogenizing device and semiconductor process equipment Download PDF

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Publication number
CN115233189B
CN115233189B CN202210868666.3A CN202210868666A CN115233189B CN 115233189 B CN115233189 B CN 115233189B CN 202210868666 A CN202210868666 A CN 202210868666A CN 115233189 B CN115233189 B CN 115233189B
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homogenizing
gas
air
disc
channels
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CN115233189A (en
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魏景峰
朱磊
陈平
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to CN202210868666.3A priority Critical patent/CN115233189B/en
Publication of CN115233189A publication Critical patent/CN115233189A/en
Priority to PCT/CN2023/108197 priority patent/WO2024017303A1/en
Priority to TW112127000A priority patent/TW202405236A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Separation By Low-Temperature Treatments (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention provides a gas homogenizing device and semiconductor process equipment, comprising a first gas homogenizing disc, a second gas homogenizing disc and a third gas homogenizing disc which are sequentially arranged along the gas inlet direction, wherein the center of the first gas homogenizing disc is provided with a first gas inlet hole, and the center of the second gas homogenizing disc is provided with a second gas inlet hole; a plurality of first air homogenizing channels which are symmetrically distributed relative to the center of the first air homogenizing disc are formed between the first air homogenizing disc and the second air homogenizing disc; a plurality of second air homogenizing channels and a plurality of third air homogenizing channels are arranged between the second air homogenizing disc and the third air homogenizing disc, and the second air homogenizing channels and the third air homogenizing channels are symmetrically distributed at the center of the first air homogenizing disc and are mutually isolated; the air outlet ends of the connecting channels are communicated with the second air homogenizing channels in a one-to-one correspondence manner. The gas homogenizing device and the semiconductor process equipment provided by the invention can reduce the processing difficulty, improve the cleanliness, and improve the gas homogenizing effect and the gas inlet efficiency.

Description

Gas homogenizing device and semiconductor process equipment
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a gas homogenizing device and semiconductor process equipment.
Background
The atomic layer deposition (Atomic Layer Deposition, ALD) process has the advantages of self-limiting periodic growth, good film quality, excellent step coverage rate and the like as an advanced film deposition process, can be applied to depositing Al2O3, hfO, hfZrO, taN, tiN, taO, W and other films, and is suitable for most IC fields, such as logic devices, DRAM, 3D bond and the like.
In the process of typical ALD process equipment, uniform air intake and rapid air intake are required, and two different reaction gases are required to alternately enter a reaction chamber through an air intake channel and then a gas homogenizing device, so that the reaction gas reaches the surface of a wafer to perform ALD reaction to prepare a thin film. For partial ALD process, because the two reaction gases react vigorously and the process is not thoroughly purged, particles are easy to generate in the gas path in the gas homogenizing device, and if the particles are carried to the surface of the wafer by the gas, the particles on the surface of the wafer can cause the exceeding of the film particles, therefore, the two reaction gases are required to enter the reaction chamber along different gas paths in the gas homogenizing device, so that the converging probability of the two reaction gases is reduced as much as possible, namely, the gas homogenizing device is required to separate the gas paths for conveying the two different process gases from each other, and the functions of gas homogenizing, rapid gas inlet and the like are realized.
However, the conventional gas homogenizing device inevitably has the following problems in practical application:
firstly, the gas homogenizing device is an integral processing part, namely, long deep holes, dense pore channels and the like which form a gas path are processed on an integral structure, the processing difficulty is high, particles are easy to be left in the gas homogenizing device in the processing process, the cleanliness of the gas homogenizing device is poor, and processing errors and processing deviations are easy to occur due to the fact that gaps of the gas paths are small, so that the process repeatability of different process equipment is poor.
Secondly, because two kinds of reaction gases are required to enter the reaction chamber along different gas paths in the gas homogenizing device, the existing gas homogenizing device cannot realize central symmetry of the gas paths corresponding to the two kinds of reaction gases, so that the uniformity of gas distribution entering the reaction chamber is affected.
Disclosure of Invention
The invention aims at solving at least one of the technical problems in the prior art, and provides a gas homogenizing device and semiconductor process equipment, which can reduce the processing difficulty, improve the cleanliness and improve the gas homogenizing effect and the gas inlet efficiency.
The invention provides a gas homogenizing device which is applied to semiconductor process equipment and comprises a first gas homogenizing disc, a second gas homogenizing disc and a third gas homogenizing disc which are sequentially arranged along the gas inlet direction, wherein a first gas inlet is arranged in the center of the first gas homogenizing disc, a second gas inlet is arranged in the center of the second gas homogenizing disc, and the first gas inlet and the second gas inlet are mutually isolated through a partition piece;
A plurality of first air homogenizing channels which are symmetrically distributed relative to the center of the first air homogenizing disc are formed between the first air homogenizing disc and the second air homogenizing disc, and the air inlet end of each first air homogenizing channel is communicated with the first air inlet hole;
the second air homogenizing disc is provided with a plurality of connecting channels, and the air inlet ends of the connecting channels are communicated with the air outlet ends of the first air homogenizing channels in a one-to-one correspondence manner;
a plurality of second air homogenizing channels and a plurality of third air homogenizing channels are arranged between the second air homogenizing disc and the third air homogenizing disc, and the second air homogenizing channels and the third air homogenizing channels are symmetrically distributed at the center of the first air homogenizing disc and are mutually isolated;
the air outlet ends of the connecting channels are communicated with the second air homogenizing channels in a one-to-one correspondence manner; the third air homogenizing disc is provided with a plurality of first air outlet holes corresponding to each second air homogenizing channel, the air inlet end of each first air outlet hole is communicated with the corresponding second air homogenizing channel, and the air outlet end of each first air outlet hole is positioned on the surface of the third air homogenizing disc, which is away from the second air homogenizing disc;
the air inlet ends of the third air homogenizing channels are communicated with the second air inlet holes, a plurality of second air outlet holes are formed in the third air homogenizing disc and correspond to the third air homogenizing channels, the air inlet ends of the second air outlet holes are communicated with the corresponding third air homogenizing channels, and the air outlet ends of the second air outlet holes are located on the surface, deviating from the second air homogenizing disc, of the third air homogenizing disc.
Optionally, a first sealing structure and a second sealing structure are arranged between the first gas homogenizing disc and the second gas homogenizing disc, wherein the first sealing structure surrounds the periphery of the plurality of first gas homogenizing channels and is used for sealing the plurality of first gas homogenizing channels;
the first air homogenizing disc is fixedly connected with the second air homogenizing disc through a plurality of first fasteners, and the first fasteners are arranged on the outer side of the first sealing structure; the second sealing structure is used for isolating a gap between the first fastening piece and the first gas homogenizing disc from a space between the first gas homogenizing disc and the second gas homogenizing disc.
Optionally, a plurality of installation areas are divided on the outer side of the first sealing structure, and the installation areas are symmetrically distributed relative to the center of the first gas distribution disc; at least one of the first fasteners is disposed in each of the mounting areas;
the second seal structure includes a plurality of seals, each of the seals surrounding the first fastener disposed in each of the mounting areas in a one-to-one correspondence.
Optionally, a third sealing structure and a fourth sealing structure are arranged between the second gas homogenizing disc and the third gas homogenizing disc, wherein the third sealing structure is used for isolating each second gas homogenizing channel from each third gas homogenizing channel; the fourth sealing structure is arranged around the second gas homogenizing channels, the third gas homogenizing channels and the third sealing structure and is used for sealing the second gas homogenizing channels and the third gas homogenizing channels;
The second gas homogenizing disc is fixedly connected with the third gas homogenizing disc through a plurality of second fasteners, and the second fasteners are located on the outer side of the fourth sealing structure and are arranged at intervals along the circumferential direction of the second gas homogenizing disc.
Optionally, the third sealing structure is a closed structure formed by winding a sealing line along the extending direction of the interval between each second air homogenizing channel and each third air homogenizing channel.
Optionally, the spacer is a boss formed on a surface of the second air distribution disc opposite to the first air distribution disc, and the boss extends into the first air inlet hole towards the first air distribution disc, is coaxial with the first air inlet hole, and is arranged at intervals;
the boss is internally provided with a second air inlet hole which axially penetrates through the boss and the second air homogenizing disc.
Optionally, each of the first gas homogenizing passageways includes a first main passageway and a plurality of first branch passageways, wherein,
one end of the first main channel is converged at a position opposite to the first air inlet hole, and the other end of the first main channel extends to a position close to the edge of the second air homogenizing disc along the radial direction of the second air homogenizing disc;
The first branch channels are symmetrically distributed on two sides of the first main channel, and each first branch channel forms a first included angle with the first main channel; all the first branch channels between two adjacent first main channels are parallel to each other;
the air outlet end of the first branch channel is communicated with the connecting channel, and the connecting channel corresponds to the center position of the corresponding second air homogenizing channel.
Optionally, each connecting channel penetrates through the second gas distribution disc along the axial direction of the second gas distribution disc, and the dimension of the connecting channel in the extending direction of the first branch channel is larger than the dimension perpendicular to the extending direction.
Optionally, each third gas homogenizing channel comprises a second main channel and a plurality of second branch channels, wherein,
one end of the second main channel is converged at a position opposite to the second air inlet hole, and the other end of the second main channel extends to a position close to the edge of the third air homogenizing disc along the radial direction of the third air homogenizing disc;
the second branch channels are symmetrically distributed on two sides of the second main channel, each second branch channel and the second main channel form a second included angle, and the second included angle is the same as the first included angle; all the second branch channels between two adjacent second main channels are parallel to each other;
And a plurality of second air outlet holes are uniformly distributed in the extending direction of each second branch channel.
Optionally, each second gas homogenizing channel is located between each two adjacent second branch channels in a one-to-one correspondence manner, and is parallel to each adjacent second branch channel;
and a plurality of first air outlet holes are uniformly distributed in the extending direction of each second air homogenizing channel.
Optionally, two first air outlet holes at the extreme edge corresponding to each second air homogenizing channel are respectively adjacent to two ends of the second air homogenizing channel; the second air outlet holes at the extreme edge corresponding to each second branch channel are close to one end of the second branch channel.
Optionally, a portion of each of the first air outlet holes near the air outlet end thereof is a tapered hole; and a part of each second air outlet hole close to the air outlet end is a gradually-reamed hole.
Optionally, at least one of two surfaces of the first gas homogenizing disc and the second gas homogenizing disc, which are opposite to each other, is provided with a first concave channel to form a plurality of first gas homogenizing channels;
a second concave channel is arranged on at least one of two surfaces of the second gas homogenizing disc and the third gas homogenizing disc, which are opposite to each other, so as to form a plurality of second gas homogenizing channels; and a third concave channel is arranged on at least one of two surfaces of the second gas homogenizing disc and the third gas homogenizing disc, which are opposite to each other, so as to form a plurality of third gas homogenizing channels.
Optionally, a flow guiding convex part is formed on the surface of the third air homogenizing disc opposite to the air outlet end of the second air inlet hole, and the surface of the flow guiding convex part is an arc convex surface.
As another technical scheme, the invention also provides a semiconductor process device, which comprises a reaction chamber and a gas homogenizing device arranged at the top of the reaction chamber, and is characterized in that the gas homogenizing device provided by the invention is adopted and is used for independently introducing two gases into the reaction chamber respectively.
The invention has the following beneficial effects:
the gas homogenizing device provided by the invention has the advantages that the split type design is adopted, namely, the gas homogenizing device comprises the first gas homogenizing disc, the second gas homogenizing disc and the third gas homogenizing disc which are sequentially arranged along the air inlet direction, and the channels, the holes and the like of the first gas homogenizing disc, the second gas homogenizing disc and the third gas homogenizing disc can be processed in a split type, so that the processing and assembling difficulty can be reduced, the processing and installing repeatability can be improved, and the processing cost can be reduced; meanwhile, particles generated in the processing process are not easy to be left in the gas homogenizing device, so that the cleanliness can be improved. In addition, the first air inlet and the second air inlet of the air homogenizing device are respectively positioned at the centers of the first air homogenizing disc and the second air homogenizing disc, the first air homogenizing channels, the second air homogenizing channels and the third air homogenizing channels are symmetrically distributed relative to the centers of the first air homogenizing disc, one air channel formed by the first air inlet, the first air homogenizing channels, the connecting channels and the second air homogenizing channels can be realized, and the other air channel formed by the second air inlet and the third air homogenizing channels can be symmetrically distributed relative to the centers of the first air homogenizing disc, so that the air distribution uniformity of two gases entering the reaction chamber through the two air channels respectively can be improved, and the process uniformity is further improved.
The semiconductor process equipment provided by the invention can reduce the processing difficulty, improve the cleanliness and improve the gas homogenizing effect and the gas inlet efficiency by adopting the gas homogenizing device.
Drawings
FIG. 1 is a side view of a gas distribution apparatus according to an embodiment of the present invention;
FIG. 2 is a top view of a gas homogenizing device according to an embodiment of the present invention;
FIG. 3A is a cross-sectional view taken along line A-A of FIG. 2;
FIG. 3B is an enlarged view of a portion of FIG. 3A;
FIG. 4A is a cross-sectional view taken along line B-B of FIG. 2;
FIG. 4B is an enlarged view of a portion of FIG. 4A;
FIG. 5A is an exploded view of a gas distribution apparatus according to an embodiment of the present invention;
FIG. 5B is another exploded view of a gas distribution apparatus according to an embodiment of the present invention;
FIG. 6A is a front view of a first gas distribution plate used in an embodiment of the present invention;
FIG. 6B is a rear view of a first gas distribution plate used in an embodiment of the present invention;
FIG. 7A is a front view of a second distribution tray used in an embodiment of the present invention;
FIG. 7B is a rear view of a second distribution tray used in an embodiment of the present invention;
FIG. 8A is a front view of a third distribution tray used in an embodiment of the present invention;
FIG. 8B is a rear view of a third distribution tray used in an embodiment of the present invention;
FIG. 9A is a flow velocity uniformity simulation analysis chart of a portion of a second gas distribution channel employed in an embodiment of the present invention;
FIG. 9B is a flow velocity uniformity simulation analysis chart of a portion of a third gas distribution channel according to an embodiment of the present invention;
FIG. 10A is a top view and a side view of a conventional gas refining apparatus;
FIG. 10B is a cross-sectional view taken along line G-G of FIG. 10A;
fig. 10C is a flow velocity uniformity simulation analysis chart of one layer of air inlet structure adopted by the conventional air homogenizing device.
Detailed Description
In order to enable those skilled in the art to better understand the technical scheme of the invention, the gas homogenizing device and the semiconductor process equipment provided by the invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 10A and 10B together, a conventional gas homogenizing device is an integral processing part, two mutually isolated gas paths are formed in the gas homogenizing device for conveying two kinds of reaction gases separately in a mutually isolated manner, a first gas inlet 41 and a second gas inlet 42 are arranged at the top of the gas homogenizing device, the first gas inlet 41 and the second gas inlet 42 are eccentrically arranged relative to the center of the gas homogenizing device, two layers of gas inlet structures are arranged in the gas homogenizing device, the second layer of gas inlet structures are as shown in fig. 10B, and the first layer of gas inlet structures are similar to the second layer of gas inlet structures. Taking the second layer of air inlet structure as an example, the air outlet end of the second air inlet hole 42 is communicated with the junctions of a plurality of main channels 43 of the second layer of air inlet structure, so that one of the reaction gases can flow into the reaction chamber through the second air inlet hole 42, each main channel 43, each branch 44 and the second air outlet hole 45 in sequence; similarly, the outlet end of the first inlet port 41 communicates with the center of the main channel of the first-layer inlet structure, so that another reaction gas can flow into the reaction chamber through the first inlet port 41, the main channels, the branches and the first outlet port 47 of the first-layer inlet structure in sequence. In addition, the tail ends of the main channels and the branch channels of the two-layer air inlet structure are communicated to the outer peripheral surface of the air homogenizing device, the tail ends are plugged through blind plugs 46, and the air channel is sealed through electron beam welding.
The above-mentioned gas homogenizing device inevitably has the following problems in practical application, namely:
firstly, the gas homogenizing device is an integral processing part, namely, long deep holes, dense pore channels and the like which form a gas path are processed on an integral structure, the processing difficulty is high, particles are easy to be left in the gas homogenizing device in the processing process, the cleanliness of the gas homogenizing device is poor, and processing errors and processing deviations are easy to occur due to the fact that gaps of the gas paths are small, so that the process repeatability of different process equipment is poor.
Secondly, since the first air inlet hole 41 and the second air inlet hole 42 are both eccentrically arranged at the center of the air homogenizing device, the two layers of air inlet structures are asymmetric relative to the center of the air homogenizing device, as shown in fig. 10B, the lengths of the branches located at the left side and the right side of the intersection of the main paths are different, so that the flow paths and the air outlet speeds of the different branches are inconsistent, and the uniformity of the distribution of the air entering the reaction chamber is affected.
Thirdly, as the gas needs to diffuse from the junction of the main road to the tail ends of all branches, the flow path of the reaction gas in the gas homogenizing device is longer, so that the speed of reaching the gas outlet is slower, and the gas homogenizing effect and the gas inlet efficiency are affected. As shown in fig. 10C, a flow velocity uniformity simulation analysis chart of the above-mentioned gas homogenizing device is shown. Taking the outlet flow velocity of the outlet holes as consideration, A1 to A7 and B1 to B7 in fig. 10C correspond to 7 branches in the vertical direction and the horizontal direction respectively, and six flow velocity uniformity coefficients K1 to K6 are obtained by performing simulation analysis on the flow velocity uniformity of the gas flowing from the branches to the outlet holes, wherein different ks respectively represent the ratio of the flow velocity or the pressure of the outlet holes in different branches, and the smaller the ratio is, the better the flow velocity uniformity is. The six flow velocity uniformity coefficients in the prior art are specifically: k1 The uniformity coefficient is relatively large, and therefore the uniformity of the flow rate of the gas homogenizing device flowing from the branches to the gas outlet holes is poor because of the fact that the uniformity coefficient is relatively large, k2=6.85, k3=4.23, k4=5.11, k5=5.51, and k6=5.94.
In order to solve at least one of the above problems, an embodiment of the present invention provides a gas homogenizing device, which is applied to a semiconductor process apparatus, such as an ALD process apparatus, and is disposed at the top of a reaction chamber of the ALD process apparatus, and is used for independently introducing two gases into the reaction chamber, i.e., isolating the two gases from each other in the gas homogenizing device.
Specifically, referring to fig. 1 to 8B together, the gas homogenizing device provided in the embodiment of the present invention includes a first gas homogenizing disc 1, a second gas homogenizing disc 2, and a third gas homogenizing disc 3 sequentially disposed along a gas inlet direction (e.g., a vertical direction in fig. 1), wherein a first gas inlet hole 12 is disposed at a center of the first gas homogenizing disc 1, a second gas inlet hole 211 is disposed at a center of the second gas homogenizing disc 2, and the first gas inlet hole 12 and the second gas inlet hole 211 are isolated from each other by a partition 21, so as to ensure that two reaction gases can pass through the first gas inlet hole 12 and the second gas inlet hole 211 in a mutually isolated manner.
In some alternative embodiments, the partition 21 is a boss formed on the surface of the second gas distribution plate 2 opposite to the first gas distribution plate 1, in which a second gas intake hole 211 penetrating the boss and the second gas distribution plate 2 in the axial direction thereof is provided. So arranged, the first air intake holes 12 and the second air intake holes 211 can both be located in the center of the first gas distribution plate 1, i.e., coaxial with the first gas distribution plate 1. Optionally, the boss extends into the first air inlet hole 12 towards the first air homogenizing disc 1, is coaxial with the first air inlet hole 12, and is arranged at intervals.
A plurality of first air homogenizing channels 22 which are symmetrically distributed relative to the center of the first air homogenizing disc 1 are formed between the first air homogenizing disc 1 and the second air homogenizing disc 2, and the air inlet end of each first air homogenizing channel 22 is communicated with the first air inlet hole 12; the second air homogenizing disc 2 is provided with a plurality of connecting channels 23, and the air inlet ends of the connecting channels 23 are communicated with the air outlet ends of the first air homogenizing channels 22 in a one-to-one correspondence manner; a plurality of second air homogenizing channels 31 and a plurality of third air homogenizing channels 33 are arranged between the second air homogenizing disc 2 and the third air homogenizing disc 3, and the second air homogenizing channels 31 and the third air homogenizing channels 33 are symmetrically distributed relative to the center of the first air homogenizing disc 1 and are mutually isolated. The air outlet ends of the connecting channels 23 are communicated with the second air homogenizing channels 31 in a one-to-one correspondence manner; the third gas homogenizing disc 3 is provided with a plurality of first gas outlet holes 32 corresponding to each second gas homogenizing channel 31, the gas inlet end of each first gas outlet hole 32 is communicated with the corresponding second gas homogenizing channel 31, and the gas outlet end of each first gas outlet hole 32 is positioned on the surface of the third gas homogenizing disc 3, which is away from the second gas homogenizing disc 2. The air inlet ends of the third air homogenizing channels 33 are communicated with the second air inlet holes 211, a plurality of second air outlet holes 34 are arranged on the third air homogenizing disc 3 and correspond to each third air homogenizing channel 33, the air inlet end of each second air outlet hole 34 is communicated with the corresponding third air homogenizing channel 33, and the air outlet end of each second air outlet hole 34 is positioned on the surface of the third air homogenizing channel 33, which is away from the second air homogenizing disc 2.
As shown by the arrows in fig. 3B, when the first gas C1 is introduced, it flows into each first gas-homogenizing channel 22 via the first gas inlet hole 12, then flows into each second gas-homogenizing channel 31 via the corresponding connection channel 23, and finally flows out via each first gas outlet hole 32. The first gas C1 realizes the secondary gas homogenizing effect through the first gas homogenizing channel 22 and the second gas homogenizing channel 31, respectively.
As shown by the arrows in fig. 4B, when the second gas C2 is introduced, it flows into each third gas distribution channel 33 through the second gas inlet holes 211, and then flows out through each second gas outlet hole 34. The second gas C2 achieves a primary gas-homogenizing effect via the third gas-homogenizing passage 33.
The air homogenizing device provided by the embodiment of the invention can be used for carrying out split processing on channels, holes and the like of the first air homogenizing disc 1, the second air homogenizing disc 2 and the third air homogenizing disc 3 which are sequentially arranged along the air inlet direction by adopting split design, so that the processing and assembling difficulty can be reduced, the processing and installing repeatability can be improved, and the processing cost can be reduced; meanwhile, particles generated in the processing process are not easy to be left in the gas homogenizing device, so that the cleanliness can be improved.
In addition, in the gas homogenizing device provided by the embodiment of the invention, the first gas inlet hole 12 and the second gas inlet hole 211 are respectively positioned at the centers of the first gas homogenizing disc 1 and the second gas homogenizing disc 2, and the plurality of first gas homogenizing channels 22, the plurality of second gas homogenizing channels 31 and the plurality of third gas homogenizing channels 33 are symmetrically distributed relative to the center of the first gas homogenizing disc 1, compared with the prior art that the two-layer gas inlet structure is asymmetric relative to the center of the gas homogenizing device, the gas homogenizing device can realize one gas channel formed by the first gas inlet hole 12, the plurality of first gas homogenizing channels 22, the plurality of connecting channels 23 and the plurality of second gas homogenizing channels 31, and the other gas channel formed by the second gas inlet hole 211 and the plurality of third gas homogenizing channels 33 can be symmetrically distributed relative to the center of the first gas homogenizing disc 1, so that the flow paths and the gas outlet speeds of the gas in the gas channels are consistent, and the gas distribution uniformity of the two gases C1 and C2 entering the reaction chamber respectively through the two gas channels can be improved, and the process uniformity is further improved.
In the embodiment of the present invention, the symmetrical structures of each of the plurality of first air-homogenizing passages 22, the plurality of second air-homogenizing passages 31, and the plurality of third air-homogenizing passages 33 are not particularly limited, as long as the air-homogenizing effect can be achieved.
In the prior art, the tail ends of all main paths and all branch paths of the two-layer air inlet structure are communicated to the outer peripheral surface of the air homogenizing device, the tail ends are plugged through blind plugs, and the air path is sealed through electron beam welding. Because the welding position is many, the welding degree of difficulty is big, and welding quality problem appears very easily to, the granule that produces in the welding process can carry over inside the passageway, and carry over the granule inside the passageway and be difficult to process cleanly through modes such as wasing and admitting air, lead to even inside cleanliness factor of gas device relatively poor.
In order to solve the above-mentioned problem, as shown in fig. 6B, optionally, a first sealing structure 13 and a second sealing structure 14 are disposed between the first gas distribution plate 1 and the second gas distribution plate 2, where the first sealing structure 13 surrounds the plurality of first gas distribution channels 22 and is used for sealing the plurality of first gas distribution channels 22, i.e. ensuring that the gas in the first gas distribution channels 22 does not leak out from between the first gas distribution plate 1 and the second gas distribution plate 2. The first gas homogenizing disc 1 and the second gas homogenizing disc 2 are fixedly connected through a plurality of first fasteners 4, specifically, a plurality of through holes 11 are formed in the first gas homogenizing disc 1, a plurality of threaded holes 24 are correspondingly formed in the second gas homogenizing disc 2, each first fastener 4 penetrates through each through hole 11 in a one-to-one correspondence manner and is in threaded connection with the corresponding threaded hole 24, and therefore the first gas homogenizing disc 1 and the second gas homogenizing disc 2 are fixedly connected. Alternatively, the first air distribution disc 1 and the second air distribution disc 2 can be installed and positioned through a plurality of positioning pins 5.
Further, a plurality of first fasteners 4 are provided outside the first sealing structure 13; the second seal structure 14 serves to isolate a gap between the first fastener 4 and the first gas distribution plate 1 (i.e., a gap between the first fastener 4 and the through hole 11) from a space between the first gas distribution plate 1 and the second gas distribution plate 2. In this way, the external atmosphere is isolated from the space between the first air homogenizing disc 1 and the second air homogenizing disc 2, and the external air is prevented from entering the space through the through hole 11, so that the tightness of the space is ensured. The first fastener 4 may be a fastening screw. On the basis of adopting a split structure, the embodiment of the invention realizes the sealing and fixing of the first air homogenizing disc 1 and the second air homogenizing disc 2 by adopting a mode of combining a sealing structure with screw fixation, compared with the prior art, the sealing method has the advantages that the welding quality problem can not occur, the sealing reliability is higher, and particles can not be generated, so that the cleanliness can be improved; meanwhile, the sealing and fixing modes adopted by the embodiment of the invention are detachable and convenient to detach and maintain, and the number of the adopted sealing surfaces and sealing pieces is small, so that the maintenance and equipment cost can be reduced.
In some alternative embodiments, as shown in fig. 6B, the outer side of the first sealing structure 13 is divided into a plurality of mounting areas E, and the plurality of mounting areas E are symmetrically distributed with respect to the center of the first gas distribution disc 1; at least one first fastening member 4 is provided in each mounting area E; the second sealing structure 14 includes a plurality of seals, each of which surrounds the first fastener 4 disposed in each mounting region E in a one-to-one correspondence. By means of the arrangement, the first air homogenizing disc 1 and the second air homogenizing disc 2 can be uniformly fixed in the circumferential direction, and the external atmosphere can be isolated from the space between the first air homogenizing disc 1 and the second air homogenizing disc 2, so that the tightness of the space can be guaranteed. In practical application, the shape of the first sealing structure 13 and the second sealing structure 14 may be arbitrary as long as the sealing effect can be achieved. In addition, a mounting groove may be formed on the back surface of the first gas distribution plate 1 (i.e., the surface opposite to the second gas distribution plate 2) for fixing the first seal structure 13 and the second seal structure 14. Of course, a mounting groove may be formed on the front surface of the second gas distribution plate 2 (i.e., the surface opposite to the first gas distribution plate 1).
In some alternative embodiments, as shown in fig. 7B, a third sealing structure 28 and a fourth sealing structure 27 are disposed between the second gas distribution plate 2 and the third gas distribution plate 3, where the third sealing structure 28 is configured to isolate each second gas distribution channel 31 from each third gas distribution channel 33, so that the first gas C1 and the second gas C2 can pass through the second gas distribution channel 31 and the third gas distribution channel 33 separately from each other. The fourth sealing structure 27 is disposed around the second gas homogenizing passages 31, the third gas homogenizing passages 33 and the third sealing structure 28, and is used for sealing the second gas homogenizing passages 31 and the third gas homogenizing passages 33, i.e. ensuring that the gas in the second gas homogenizing passages 31 cannot leak out from between the second gas homogenizing disc 2 and the third gas homogenizing disc 3. The second air homogenizing disc 2 is fixedly connected with the third air homogenizing disc 3 through a plurality of second fasteners 8, specifically, a plurality of through holes 25 are formed in the second air homogenizing disc 2, a plurality of threaded holes 36 are correspondingly formed in the third air homogenizing disc 3, each second fastener 8 penetrates through each through hole 25 in a one-to-one correspondence mode and is in threaded connection with the corresponding threaded hole 36, and therefore the second air homogenizing disc 2 and the third air homogenizing disc 3 are fixedly connected. The second fastening members 8 are located outside the fourth sealing structure 27 and are disposed at intervals along the circumferential direction of the second gas distribution plate 2 to ensure uniform fixation of the second gas distribution plate 2 and the third gas distribution plate 3 in the circumferential direction thereof. The second fastener 8 may be a fastening screw.
On the basis of adopting a split structure, the embodiment of the invention realizes the sealing and fixing of the second air homogenizing disc 2 and the third air homogenizing disc 3 by adopting a mode of combining a sealing structure with screw fixation, compared with the prior art, the sealing method has the advantages that the welding quality problem can not occur, the sealing reliability is higher, and particles can not be generated, so that the cleanliness can be improved; meanwhile, the sealing and fixing modes adopted by the embodiment of the invention are detachable, so that the disassembly and maintenance are convenient, and the maintenance cost is reduced.
In some alternative embodiments, as shown in fig. 7B, the third seal structure 28 is a closed structure formed by winding one seal line along the extending direction of the interval between each second gas-homogenizing channel 31 and each third gas-homogenizing channel 33 to isolate each second gas-homogenizing channel 31 from each third gas-homogenizing channel 33. The winding manner of the third sealing structure 28 may be adaptively designed according to the extending direction of the interval between the second air distribution channel 31 and the third air distribution channel 33.
The first plurality of gas distribution channels 22 may have a plurality of symmetrical structures, and in some alternative embodiments, as shown in fig. 7A, four first gas distribution channels 22 are symmetrically distributed with respect to the center of the second gas distribution disc 2; each first air homogenizing channel 22 comprises a first main channel 221 and a plurality of first branch channels 222, wherein one end of the first main channel 221 is converged at a position opposite to the first air inlet hole 12, and the other end of the first main channel 221 extends to a position close to the edge of the second air homogenizing disc 2 along the radial direction of the second air homogenizing disc 2; the first branch channels 222 are symmetrically distributed on two sides of the first main channel 221, each first branch channel 222 forms a first included angle with the first main channel 221, all the first branch channels 222 between the first main channels 221 of two adjacent first air homogenizing channels 22 are parallel to each other, the air outlet end (air flow end) of the first branch channel 222 is the air outlet end of the first air homogenizing channel 22, and is communicated with the connecting channel 23, and the connecting channel 23 corresponds to the center position of the corresponding second air homogenizing channel 31, that is, the air inlet end 23a of the connecting channel 23 is located at the air outlet end (air flow end) of the first branch channel 222.
As shown in fig. 3B, by making the gas outlet ends of the respective connection channels 23 correspond to the central positions of the respective second gas homogenizing channels 31 in a one-to-one correspondence manner, the reaction gas can be made to enter the respective second gas homogenizing channels 31 from the central positions, so that the gas can be diffused from the central positions to the respective gas outlet ends at the same time, which can shorten the longest distance for the gas to reach the gas outlet ends from the central positions, and can improve the speed for reaching the gas outlet ends, and further can improve the gas homogenizing effect and the gas inlet efficiency, compared with the prior art in which the gas needs to be diffused from the junction of the main road to the end of each branch road.
In practical application, the width and depth of each of the first main channel 221 and the first branch channel 222 may be adjusted according to specific requirements, so long as the requirement of process uniformity is satisfied. Optionally, the cross-sectional area of the first main channel 221 is larger than the cross-sectional area of the first branch channel 222 to ensure that the gas flow rate meets the requirements.
In a specific embodiment, as shown in fig. 7A, if the first main channels 221 are four and perpendicular to each other, the first included angle may be 45 °, for example, so that the first branch channels 222 on both sides of each first main channel 221 extend in two directions perpendicular to each other, so that a symmetrical structure with respect to the center of the second gas distribution plate 2 may be formed.
In some alternative embodiments, as shown in fig. 7B, each connecting channel 23 penetrates the second gas distribution plate 2 in the axial direction of the second gas distribution plate 2, and the dimension of the connecting channel 23 in the extending direction of the first branch channel 222 (for example, the radial direction of the second gas distribution plate 2) is larger than the dimension perpendicular to the extending direction. For example, the orthographic projection of the outlet end 23b of the connection channel 23 on the second gas distribution plate 2 is oblong or elliptical, so that the gas flow rate can be further increased, and the gas inlet efficiency can be improved.
The symmetrical structure of the third air distribution channels 33 may be various, in some alternative embodiments, as shown in fig. 8A, each third air distribution channel 33 includes a second main channel 331 and a plurality of second branch channels 332, where one end of the second main channel 331 converges at a position opposite to the second air inlet holes 211, and the other end of the second main channel 331 extends to a position close to the edge of the third air distribution disc 3 along the radial direction of the third air distribution disc 3. Alternatively, the number of the second main channels 331 is the same as the number of the first main channels 221, and the first main channels 221 and the second main channels 331 are disposed opposite to each other in a one-to-one correspondence manner, for example, the first main channels 221 and the second main channels 331 are four, the four first main channels 221 are perpendicular to each other, the four second main channels 331 are perpendicular to each other, and the four first main channels 221 and the four second main channels 331 are disposed in a one-to-one correspondence manner in the axial direction.
The second branch channels 332 are symmetrically distributed on two sides of the second main channel 331, and each second branch channel 332 forms a second included angle with the second main channel 331, and the second included angle is the same as the first included angle; all the second sub-channels 332 between two adjacent second main channels 331 are parallel; a plurality of the second air outlet holes 34 are uniformly distributed in the extending direction of each second branch channel 332. In a specific embodiment, as shown in fig. 8A, if the second main channels 331 are four and perpendicular to each other, the second included angle may be 45 ° for example, so that the second branch channels 332 on both sides of each second main channel 331 extend in two directions perpendicular to each other, so that a symmetrical structure with respect to the center of the third air distribution plate 3 may be formed.
In practical application, the width and depth of each of the second main channel 331 and the second sub channel 332 may be adjusted according to specific requirements, so long as the requirement of process uniformity is met. Optionally, the cross-sectional area of the second main channel 331 is larger than the cross-sectional area of the second branch channel 332 to ensure that the gas flow rate meets the requirements.
Further, as shown in fig. 8A, the plurality of second gas-homogenizing passageways 31 are located between each two adjacent second branch passageways 332 in one-to-one correspondence, and are parallel to each other with the adjacent second branch passageways 332, that is, the second gas-homogenizing passageways 31 and the second branch passageways 332 are arranged at intervals in the circumferential direction of the third gas-homogenizing disc 3; the air outlet end 23b of the connecting channel 23 corresponds to the central position of the second air homogenizing channel 31, so that air can diffuse from the central position of the second air homogenizing channel 31 to two ends of the second air homogenizing channel 31 at the same time, and the longest distance from the central position to the air outlet end is reduced to about one half of the radius of the third air homogenizing disc 3, thereby effectively improving the air flow speed, and further improving the air homogenizing effect and air inlet efficiency. Optionally, the second gas equalizing channel 31 is a straight channel.
A plurality of the first air outlet holes 32 are uniformly distributed in the extending direction of each second air homogenizing channel 31. Thereby, the plurality of second distribution channels 31 form a symmetrical structure with respect to the center of the third distribution plate 3. Further, as shown in fig. 8B, by arranging the second gas distribution channels 31 and the second branch channels 332 alternately in the circumferential direction of the third gas distribution plate 3, the first gas outlet holes 32 and the second gas outlet holes 34 may be arranged alternately, that is, the plurality of first gas outlet holes 32 and the plurality of second gas outlet holes 34 may each be uniformly distributed on the third gas distribution plate 3. In practical applications, the first air outlet 32 and the second air outlet 34 may be circular holes, and the diameter range is, for example, 0.8mm-1.5mm, which is not only suitable for the requirements of rapid air homogenizing and rapid air intake in the ALD process, but also does not affect the process uniformity, and saves air consumption. Of course, the diameter of the gas outlet holes may be adaptively designed according to different processes, for example, for a CVD process, the diameters of the first gas outlet holes 32 and the second gas outlet holes 34 may be less than 0.8mm.
In some alternative embodiments, as shown in fig. 3B, two first air outlet holes 32a at the extreme edge of each second air homogenizing channel 31 are respectively adjacent to two ends of the second air homogenizing channel 31 (i.e., two air flow ends of the second air homogenizing channel 31), and optionally, a distance between the first air outlet holes 32a and an end boundary of the second air homogenizing channel 31 is less than or equal to 2mm; as shown in fig. 4B, the second outlet hole 34a at the edge of each second branch channel 332 is adjacent to one end of the second branch channel 332 (i.e., the airflow end of the second branch channel 332), and optionally, the distance between the second outlet hole 34a and the end boundary of the second branch channel 332 is less than or equal to 2mm. By this arrangement, the air flow can be diffused to the boundary between the two ends of the second air homogenizing channel 31 and the boundary between one end of the second branch channel 332, and flows out from the first air outlet hole 32a and the second air outlet hole 34a at the edge, so that the air flow is prevented from generating vortex near the boundary due to the too large distance between the air outlet hole at the edge and the boundary of the channel, a dead zone is formed, the air is easy to remain in the dead zone, and the air is not easy to be discharged.
In some alternative embodiments, as shown in fig. 3B, a portion of each first outlet aperture 32 near its outlet end is a diverging aperture 321; as shown in fig. 4B, a portion of each second outlet hole 34 near the outlet end thereof is a diverging hole 341. By means of the diverging holes 321 and 341, the reaction gas entering the reaction chamber can be uniformly diffused to the surface of the wafer, and the difference between the thickness of the film deposited on the surface of the wafer and the thickness of the film deposited on the area corresponding to the gas outlet hole and the thickness of the film deposited on the other areas can be avoided, so that the process uniformity can be improved.
In some alternative embodiments, a first recessed channel is provided in at least one of two surfaces of the first and second gas distribution plates 1 and 2 opposite to each other, constituting a plurality of first gas distribution channels 22, for example, as shown in fig. 7A, the first recessed channel may be provided in the front surface of the second gas distribution plate 2 (i.e., the surface opposite to the first gas distribution plate 1). Similarly, a second concave channel is provided on at least one of the two surfaces of the second gas distribution plate 2 and the third gas distribution plate 3 that are opposite to each other, constituting a plurality of second gas distribution channels 31; a third concave channel is provided in at least one of the two surfaces of the second gas distribution plate 2 and the third gas distribution plate 3 that face each other, constituting a plurality of third gas distribution channels 33. For example, as shown in fig. 8A, the second concave channel and the third concave channel are both provided on the front surface of the third gas distribution plate 3 (i.e., opposite to the surface of the second gas distribution plate 2). In this case, as shown in fig. 6B, the first seal structure 13 and the second seal structure 14 may be provided on the back surface of the first gas distribution plate 1 (i.e., opposite to the surface of the second gas distribution plate 2); the third seal structure 28 and the fourth seal structure 27 may be provided on the back surface of the second distribution tray 2 (i.e., opposite to the surface of the third distribution tray 3).
In some alternative embodiments, as shown in fig. 4B and 8A, a flow guiding protrusion 35 is formed on a surface of the third air distribution plate 3 opposite to the air outlet end of the second air inlet hole 211, and the surface of the flow guiding protrusion 35 is an arc-shaped convex surface. By means of the diversion protrusion 35, an even diversion effect can be achieved, and the influence of vortex formation near the center of the third air homogenizing disc 3 when the air flow enters the second main channel 331 from the second air inlet hole 211 is avoided.
In some alternative embodiments, there may be a case where the air inlet end of the second branch channel 332 is directly opposite to the air outlet end of the second air inlet hole 211 in the plurality of second branch channels 332, for example, as shown in fig. 8A, the air inlet ends of two second branch channels 332a are directly opposite to the air outlet end of the second air inlet hole 211, in which case, the width of the channel section of the second branch channel 332a near the air inlet end thereof may be reduced relative to other parts, so as to avoid that the air flow entering the second branch channel 332a is too large, and the whole air homogenizing effect is affected.
FIG. 9A is a graph of simulated analysis of flow velocity uniformity of a portion of a second distribution channel employed in an embodiment of the present invention. FIG. 9B is a flow rate uniformity analysis chart of a portion of a third gas distribution channel according to an embodiment of the present invention. As shown in fig. 9A, A1 to A7, B1 to B6 respectively correspond to 7 branches in the vertical direction and 6 branches in the horizontal direction, six flow velocity uniformity coefficients K1 to K6 are obtained by performing simulation analysis on the flow velocity uniformity of the gas flowing from these branches to the gas outlet holes, and the six flow velocity uniformity coefficients corresponding to part of the second gas homogenizing channels are specifically: k1 =6.5, k2=6.83, k3=2.22, k4=2.22, k5=2.32, k6=1.88, the uniformity coefficient is significantly smaller than the six flow velocity uniformity coefficients shown in fig. 10C; as shown in fig. 9B, A1 to A7, B1 to B6 correspond to 7 branches in the vertical direction and 6 branches in the horizontal direction, and six flow velocity uniformity coefficients K1 to K6 are obtained by performing simulation analysis on the flow velocity uniformity of the gas flowing from these branches to the gas outlet holes, and the six flow velocity uniformity coefficients corresponding to part of the third gas homogenizing channels are specifically: k1 =7.6, k2=3.3, k3=3.8, k4=4.8, k5=4.4, k6=3.9, and the uniformity coefficient is significantly smaller than the six flow velocity uniformity coefficients shown in fig. 10C. Therefore, the uniformity of the flow velocity flowing from the second air homogenizing channel and the third air homogenizing channel to the corresponding air outlet holes is better than that of a two-layer air homogenizing structure in the prior art, and the air homogenizing device provided by the embodiment of the invention can effectively improve the process uniformity.
In practical application, the surfaces of the channels and the holes in the gas homogenizing device provided by the embodiment of the invention can be treated by mechanical polishing or electrochemical polishing and the like, so that the surface quality of the channels and the holes is effectively controlled and improved, the surface roughness is reduced, the gas flow resistance is reduced, the particle quantity in the channels is effectively reduced, and the granularity of film formation on the surface of a wafer is reduced.
In summary, the gas homogenizing device provided by the embodiment of the invention adopts a split design, that is, the gas homogenizing device comprises the first gas homogenizing disc, the second gas homogenizing disc and the third gas homogenizing disc which are sequentially arranged along the air inlet direction, and can perform split processing on channels, holes and the like of the first gas homogenizing disc, the second gas homogenizing disc and the third gas homogenizing disc, so that the processing and assembling difficulty can be reduced, the processing and installing repeatability can be improved, and the processing cost can be reduced; meanwhile, particles generated in the processing process are not easy to be left in the gas homogenizing device, so that the cleanliness can be improved. In addition, the first air inlet and the second air inlet of the air homogenizing device are respectively positioned at the centers of the first air homogenizing disc and the second air homogenizing disc, the first air homogenizing channels, the second air homogenizing channels and the third air homogenizing channels are symmetrically distributed relative to the centers of the first air homogenizing disc, one air channel formed by the first air inlet, the first air homogenizing channels, the connecting channels and the second air homogenizing channels can be realized, and the other air channel formed by the second air inlet and the third air homogenizing channels can be symmetrically distributed relative to the centers of the first air homogenizing disc, so that the air distribution uniformity of two gases entering the reaction chamber through the two air channels respectively can be improved, and the process uniformity is further improved.
As another technical scheme, the embodiment of the invention also provides a semiconductor process device, which comprises a reaction chamber and a gas homogenizing device arranged at the top of the reaction chamber, wherein the gas homogenizing device provided by the embodiment of the invention is used for independently introducing two gases into the reaction chamber respectively.
Alternatively, the semiconductor processing apparatus is an ALD processing apparatus. The gas homogenizing device is arranged at the top of the reaction chamber of the ALD process equipment and is used for independently introducing two gases into the reaction chamber respectively, even if the two gases are mutually isolated in the gas homogenizing device.
The semiconductor process equipment provided by the embodiment of the invention can reduce the processing difficulty, improve the cleanliness and improve the gas homogenizing effect and the gas inlet efficiency by adopting the gas homogenizing device provided by the embodiment of the invention.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.

Claims (15)

1. The gas homogenizing device is applied to semiconductor process equipment and is characterized by comprising a first gas homogenizing disc, a second gas homogenizing disc and a third gas homogenizing disc which are sequentially arranged along the gas inlet direction, wherein a first gas inlet is arranged in the center of the first gas homogenizing disc, a second gas inlet is arranged in the center of the second gas homogenizing disc, and the first gas inlet and the second gas inlet are mutually isolated through a partition piece;
a plurality of first air homogenizing channels which are symmetrically distributed relative to the center of the first air homogenizing disc are formed between the first air homogenizing disc and the second air homogenizing disc, and the air inlet end of each first air homogenizing channel is communicated with the first air inlet hole;
the second air homogenizing disc is provided with a plurality of connecting channels, and the air inlet ends of the connecting channels are communicated with the air outlet ends of the first air homogenizing channels in a one-to-one correspondence manner;
a plurality of second air homogenizing channels and a plurality of third air homogenizing channels are arranged between the second air homogenizing disc and the third air homogenizing disc, and the second air homogenizing channels and the third air homogenizing channels are symmetrically distributed at the center of the first air homogenizing disc and are mutually isolated;
the air outlet ends of the connecting channels are communicated with the second air homogenizing channels in a one-to-one correspondence manner; the third air homogenizing disc is provided with a plurality of first air outlet holes corresponding to each second air homogenizing channel, the air inlet end of each first air outlet hole is communicated with the corresponding second air homogenizing channel, and the air outlet end of each first air outlet hole is positioned on the surface of the third air homogenizing disc, which is away from the second air homogenizing disc;
The air inlet ends of the third air homogenizing channels are communicated with the second air inlet holes, a plurality of second air outlet holes are formed in the third air homogenizing disc and correspond to the third air homogenizing channels, the air inlet ends of the second air outlet holes are communicated with the corresponding third air homogenizing channels, and the air outlet ends of the second air outlet holes are located on the surface, deviating from the second air homogenizing disc, of the third air homogenizing disc.
2. The gas homogenizing apparatus of claim 1, wherein a first sealing structure and a second sealing structure are disposed between the first gas homogenizing disc and the second gas homogenizing disc, wherein the first sealing structure surrounds the plurality of first gas homogenizing channels for sealing the plurality of first gas homogenizing channels;
the first air homogenizing disc is fixedly connected with the second air homogenizing disc through a plurality of first fasteners, and the first fasteners are arranged on the outer side of the first sealing structure; the second sealing structure is used for isolating a gap between the first fastening piece and the first gas homogenizing disc from a space between the first gas homogenizing disc and the second gas homogenizing disc.
3. The gas evening device of claim 2, wherein a plurality of mounting areas are defined outside the first sealing structure, the plurality of mounting areas being symmetrically distributed with respect to a center of the first gas evening disc; at least one of the first fasteners is disposed in each of the mounting areas;
The second seal structure includes a plurality of seals, each of the seals surrounding the first fastener disposed in each of the mounting areas in a one-to-one correspondence.
4. The gas homogenizing apparatus of claim 1, wherein a third seal and a fourth seal are disposed between the second and third homogenizing trays, wherein the third seal is configured to isolate each of the second homogenizing channels from each of the third homogenizing channels; the fourth sealing structure is arranged around the second gas homogenizing channels, the third gas homogenizing channels and the third sealing structure and is used for sealing the second gas homogenizing channels and the third gas homogenizing channels;
the second gas homogenizing disc is fixedly connected with the third gas homogenizing disc through a plurality of second fasteners, and the second fasteners are located on the outer side of the fourth sealing structure and are arranged at intervals along the circumferential direction of the second gas homogenizing disc.
5. The gas distribution apparatus according to claim 4, wherein the third seal structure is a closed structure formed by winding one seal line in an extending direction of a space between each of the second gas distribution passages and each of the third gas distribution passages.
6. The air homogenizing apparatus of claim 1, wherein the spacer is a boss formed on a surface of the second air homogenizing disc opposite the first air homogenizing disc, the boss extending into the first air inlet aperture toward the first air homogenizing disc and being coaxial with and spaced apart from the first air inlet aperture;
the boss is internally provided with a second air inlet hole which axially penetrates through the boss and the second air homogenizing disc.
7. The gas distribution apparatus according to claim 1, wherein each of the first gas distribution passages includes a first main passage and a plurality of first branch passages, wherein,
one end of the first main channel is converged at a position opposite to the first air inlet hole, and the other end of the first main channel extends to a position close to the edge of the second air homogenizing disc along the radial direction of the second air homogenizing disc;
the first branch channels are symmetrically distributed on two sides of the first main channel, and each first branch channel forms a first included angle with the first main channel; all the first branch channels between two adjacent first main channels are parallel to each other;
the air outlet end of the first branch channel is communicated with the connecting channel, and the connecting channel corresponds to the center position of the corresponding second air homogenizing channel.
8. The gas distribution apparatus according to claim 7, wherein each of the connection passages penetrates the second gas distribution plate in an axial direction of the second gas distribution plate, and a dimension of the connection passage in an extending direction of the first branch passage is larger than a dimension perpendicular to the extending direction.
9. The gas distribution apparatus according to claim 7, wherein each of the third gas distribution passages includes a second main passage and a plurality of second branch passages, wherein,
one end of the second main channel is converged at a position opposite to the second air inlet hole, and the other end of the second main channel extends to a position close to the edge of the third air homogenizing disc along the radial direction of the third air homogenizing disc;
the second branch channels are symmetrically distributed on two sides of the second main channel, each second branch channel and the second main channel form a second included angle, and the second included angle is the same as the first included angle; all the second branch channels between two adjacent second main channels are parallel to each other;
and a plurality of second air outlet holes are uniformly distributed in the extending direction of each second branch channel.
10. The gas homogenizing apparatus of claim 9, wherein each of the second gas homogenizing passages is located between each adjacent two of the second branch passages in one-to-one correspondence and is parallel to each adjacent second branch passage;
And a plurality of first air outlet holes are uniformly distributed in the extending direction of each second air homogenizing channel.
11. The gas homogenizing apparatus of claim 10, wherein two first gas outlets of a corresponding extreme edge of each second gas homogenizing channel are respectively adjacent to two ends of the second gas homogenizing channel; the second air outlet holes at the extreme edge corresponding to each second branch channel are close to one end of the second branch channel.
12. The gas evening device of claim 10, wherein a portion of each of the first gas outlet holes adjacent the gas outlet end thereof is tapered; and a part of each second air outlet hole close to the air outlet end is a gradually-reamed hole.
13. The gas distribution apparatus according to claim 1, wherein a first recessed channel is provided in at least one of two surfaces of the first gas distribution plate and the second gas distribution plate that are opposed to each other, constituting a plurality of the first gas distribution passages;
a second concave channel is arranged on at least one of two surfaces of the second gas homogenizing disc and the third gas homogenizing disc, which are opposite to each other, so as to form a plurality of second gas homogenizing channels; and a third concave channel is arranged on at least one of two surfaces of the second gas homogenizing disc and the third gas homogenizing disc, which are opposite to each other, so as to form a plurality of third gas homogenizing channels.
14. The air homogenizing apparatus of claim 1, wherein a surface of the third air homogenizing tray opposite to the air outlet end of the second air inlet is formed with a deflector protrusion, and a surface of the deflector protrusion is an arc-shaped convex surface.
15. A semiconductor process device comprising a reaction chamber and a gas homogenizing device arranged at the top of the reaction chamber, wherein the gas homogenizing device adopts the gas homogenizing device of any one of claims 1 to 14, and is used for independently introducing two gases into the reaction chamber.
CN202210868666.3A 2022-07-22 2022-07-22 Gas homogenizing device and semiconductor process equipment Active CN115233189B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN202210868666.3A CN115233189B (en) 2022-07-22 2022-07-22 Gas homogenizing device and semiconductor process equipment
PCT/CN2023/108197 WO2024017303A1 (en) 2022-07-22 2023-07-19 Gas uniformizing device and semiconductor process equipment
TW112127000A TW202405236A (en) 2022-07-22 2023-07-19 Air homogenization device and a semiconductor process equipment

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CN115233189B (en) * 2022-07-22 2023-10-13 北京北方华创微电子装备有限公司 Gas homogenizing device and semiconductor process equipment
CN117059529B (en) * 2023-10-11 2023-12-19 江苏邑文微电子科技有限公司 Gas homogenizing device and semiconductor etching equipment

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