CN115225060A - Surface acoustic wave resonator device and method of forming the same - Google Patents
Surface acoustic wave resonator device and method of forming the same Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02842—Means for compensation or elimination of undesirable effects of reflections
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
A surface acoustic wave resonance device and a forming method thereof belong to the technical field of semiconductors, wherein the forming method comprises the following steps: providing a substrate; forming an intermediate layer on the substrate; bonding the intermediate layer and a piezoelectric layer, the piezoelectric layer being on the intermediate layer, the intermediate layer being between the substrate and the piezoelectric layer, the piezoelectric layer being of the same material as the substrate, wherein the method of bonding the intermediate layer and the piezoelectric layer comprises forming the piezoelectric layer; an electrode structure is formed on the piezoelectric layer. The piezoelectric layer is made of the same material as the substrate, so that the problem of large difference of thermal expansion coefficients of the piezoelectric layer and the substrate can be effectively solved, the risk of breakage caused by high-temperature treatment in the device manufacturing process can be further reduced, and the yield is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a surface acoustic wave resonance device and a forming method thereof.
Background
A Radio Frequency (RF) front-end chip of a wireless communication device includes a power amplifier, an antenna switch, a Radio Frequency filter, a multiplexer, a low noise amplifier, and the like. The rf filter includes a piezoelectric Acoustic surface Wave (SAW) filter, a Bulk Acoustic Wave (BAW) filter, a Micro-Electro-Mechanical System (MEMS) filter, an Integrated Passive Device (IPD) filter, and the like.
The quality factor value (Q value) of the SAW resonator and the BAW resonator is high, and the SAW resonator and the BAW resonator are made into radio frequency filters with low insertion loss and high out-of-band rejection, namely SAW filters and BAW filters, and the radio frequency filters are mainstream radio frequency filters used by wireless communication equipment such as mobile phones and base stations at present. Where the Q value is the quality factor value of the resonator, defined as the center frequency divided by the 3dB bandwidth of the resonator. The frequency of use of the SAW filter is generally from 0.4GHz to 2.7GHz and the frequency of use of the BAW filter is generally from 0.7GHz to 7GHz.
However, the surface acoustic wave resonators formed in the prior art still have many problems.
Disclosure of Invention
The invention provides a surface acoustic wave resonance device and a forming method thereof, aiming at reducing the risk of breakage caused by high-temperature treatment in the manufacturing process of a device and improving the yield.
In order to solve the above problems, a technical solution of the present invention provides a surface acoustic wave resonator device, including: a substrate; an intermediate layer on the substrate, the intermediate layer comprising a material comprising: silicon or silicon carbide; a piezoelectric layer on the intermediate layer, the piezoelectric layer being of the same material as the substrate; an electrode structure on the piezoelectric layer.
Optionally, the intermediate layer includes: a first dielectric layer for forming an acoustic reflection structure; the material of the first dielectric layer comprises: silicon or silicon carbide.
Optionally, the intermediate layer further includes: the second dielectric layer is positioned between the first dielectric layer and the piezoelectric layer and used for temperature compensation; the material of the second dielectric layer comprises: silicon dioxide, silicon oxyfluoride or silicon oxycarbide.
Optionally, the electrode structure includes: the first bus is connected with the first electrode strips; the first electrode bars and the second electrode bars are positioned between the first bus bars and the second bus bars and are arranged in a staggered mode.
Optionally, the material of the substrate comprises: aluminum nitride, aluminum nitride alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, or lead magnesium niobate-lead titanate.
Optionally, the material of the piezoelectric layer includes: aluminum nitride, aluminum nitride alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, or lead magnesium niobate-lead titanate.
Optionally, the material of the electrode structure includes: aluminum, aluminum alloys, one or more of molybdenum, ruthenium, tungsten, platinum, iridium, copper, chromium, magnesium, scandium, and tantalum.
Correspondingly, the technical scheme of the invention also provides a method for forming the surface acoustic wave resonance device, which comprises the following steps: providing a substrate; forming an intermediate layer on the substrate; bonding the intermediate layer and a piezoelectric layer, the piezoelectric layer being located on the intermediate layer, the intermediate layer being located between the substrate and the piezoelectric layer, the piezoelectric layer being of the same material as the substrate, wherein the method of bonding the intermediate layer and the piezoelectric layer comprises forming the piezoelectric layer; forming an electrode structure on the piezoelectric layer.
Optionally, the method for forming the intermediate layer includes: forming a first dielectric layer on the substrate; the material of the first dielectric layer comprises: silicon or silicon carbide.
Optionally, the method for bonding the intermediate layer and the piezoelectric layer includes: and bonding the first medium layer and the piezoelectric layer, wherein the first medium layer is positioned between the substrate and the piezoelectric layer.
Optionally, the method for forming the intermediate layer further includes: forming a second dielectric layer on the first dielectric layer; the material of the second dielectric layer comprises: silicon dioxide, silicon oxyfluoride or silicon oxycarbide.
Optionally, the method for bonding the intermediate layer and the piezoelectric layer includes: and jointing the second medium layer and the piezoelectric layer, wherein the second medium layer is positioned between the first medium layer and the piezoelectric layer.
Optionally, the method for bonding the intermediate layer and the piezoelectric layer includes: providing a layer of piezoelectric material; bonding the intermediate layer and the piezoelectric material layer.
Optionally, the method of forming the piezoelectric layer includes: and thinning the piezoelectric material layer.
Optionally, the method for forming the electrode structure includes: forming a plurality of first electrode bars and a first bus bar connecting the plurality of first electrode bars; and forming a plurality of second electrode strips and a second bus bar connected with the plurality of second electrode strips, wherein the plurality of first electrode strips and the plurality of second electrode strips are positioned between the first bus bar and the second bus bar and are arranged in a staggered manner.
Compared with the prior art, the technical scheme of the invention has the following advantages:
in the acoustic surface wave resonance device in the technical scheme of the invention, the material of the piezoelectric layer is the same as that of the substrate, so that the problem of large difference of thermal expansion coefficients of the piezoelectric layer and the substrate can be effectively solved, the risk of fracture caused by high-temperature treatment in the manufacturing process of a device can be further reduced, and the yield is improved.
Furthermore, the first dielectric layer can reflect sound waves generated on the surface of the piezoelectric layer, so that radiation of sound wave energy to the device is effectively reduced, and the Q value of the surface acoustic wave resonance device is effectively improved.
In the forming method of the acoustic surface wave resonance device in the technical scheme of the invention, the material of the piezoelectric layer is the same as that of the substrate, so that the problem of large difference of thermal expansion coefficients of the piezoelectric layer and the substrate can be effectively solved, the risk of breakage caused by high-temperature treatment in the manufacturing process of a device can be further reduced, and the yield is improved.
Further, the method of forming the intermediate layer includes: and forming a first dielectric layer. The first dielectric layer can reflect sound waves generated on the surface of the piezoelectric layer, so that the radiation of sound wave energy to a device is effectively reduced, and the Q value of the surface acoustic wave resonance device is effectively improved.
Drawings
Fig. 1 is a schematic view of a structure of a surface acoustic wave resonator device;
FIGS. 2 to 8 are schematic structural views of steps of a method of forming a surface acoustic wave resonator device in the embodiment of the present invention;
FIGS. 9 to 11 are schematic structural views of steps of a method of forming a surface acoustic wave resonator device according to another embodiment of the present invention;
FIGS. 12 to 14 are schematic structural views of steps of a method of forming a surface acoustic wave resonator device according to still another embodiment of the present invention;
fig. 15 to 17 are schematic structural views of steps of a method of forming a surface acoustic wave resonator device according to still another embodiment of the present invention.
Detailed Description
As described in the background, the surface acoustic wave resonator devices formed in the prior art still have problems. The following detailed description will be made in conjunction with the accompanying drawings.
Fig. 1 is a schematic view of the structure of a surface acoustic wave resonator device.
Referring to fig. 1, a surface acoustic wave resonator device includes: a substrate 100; a dielectric layer 101 on the substrate 100; a piezoelectric layer 102 on the dielectric layer 101; an electrode structure 103 on the piezoelectric layer 102.
The material of the substrate 100 includes: silicon, silicon carbide, gallium arsenide, gallium nitride, aluminum oxide, magnesium oxide, ceramics, or polymers. In this embodiment, silicon is used as the material of the substrate 100.
The material of the dielectric layer 101 includes: silicon dioxide, silicon oxyfluoride or silicon oxycarbide. In this embodiment, the dielectric layer 101 is made of silicon dioxide.
In this embodiment, the dielectric layer 101 and the piezoelectric layer 102 have opposite Temperature Frequency shift characteristics, so that a Temperature Coefficient of Frequency (TCF) can be reduced and tends to 0ppm/° c, thereby improving the characteristic that the operating Frequency of the surface acoustic wave resonator shifts with the operating Temperature, and having higher Frequency-Temperature stability. A surface acoustic wave resonator device including the dielectric layer 101 is called a temperature compensated surface acoustic wave resonator device (i.e., TC-SAW resonator).
In this embodiment, in order to solve the problem that the Q value is reduced when the surface wave energy of the piezoelectric layer 102 radiates into the device, the dielectric layer 101 and the substrate 100 are made of different materials with a large acoustic impedance difference to form an acoustic reflection structure, so as to reflect the energy radiated into the device, thereby reducing energy loss and improving the Q value.
However, in this embodiment, since the thermal expansion coefficients of the piezoelectric layer 102 and the substrate 100 are different from each other, a high temperature environment is required for multiple steps in the process of manufacturing. The two different materials will produce different expansions, which easily causes the wafer to break, and the yield of the product cannot be guaranteed.
On the basis, the invention provides the surface acoustic wave resonance device and the forming method thereof, the material of the piezoelectric layer is the same as that of the substrate, so that the problem of large difference of thermal expansion coefficients of the piezoelectric layer and the substrate can be effectively solved, the risk of fracture caused by high-temperature treatment in the manufacturing process of a device can be further reduced, and the yield is improved.
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, embodiments accompanying figures are described in detail below.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described herein, and thus the present invention is not limited to the specific embodiments disclosed below.
Fig. 2 to 8 are schematic structural views of steps of a method of forming a surface acoustic wave resonator device in the embodiment of the present invention.
Referring to fig. 2, a substrate 200 is provided.
The material of the substrate 200 includes: aluminum nitride, aluminum nitride alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, or lead magnesium niobate-lead titanate. In this embodiment, the material of the substrate 200 is lithium niobate.
Referring to fig. 3, an intermediate layer is formed on the substrate 200.
In this embodiment, the method of forming the intermediate layer includes: a first dielectric layer 201 is formed on the substrate 200.
The material of the first dielectric layer 201 includes: silicon or silicon carbide. In this embodiment, the first dielectric layer 201 is made of silicon.
After forming the intermediate layer, further comprising: bonding the intermediate layer with a piezoelectric layer, the piezoelectric layer being located on the intermediate layer, the intermediate layer being located between the substrate 200 and the piezoelectric layer, the piezoelectric layer being of the same material as the substrate 200, wherein the method of bonding the intermediate layer and the piezoelectric layer comprises forming the piezoelectric layer. Please refer to fig. 4 to fig. 6.
Referring to fig. 4, a piezoelectric material layer 202 is provided.
The material of the piezoelectric material layer 202 includes: aluminum nitride, aluminum nitride alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, or lead magnesium niobate-lead titanate. In this embodiment, lithium niobate is used as the material of the piezoelectric material layer 202.
Referring to fig. 5, the intermediate layer and the piezoelectric material layer 202 are bonded.
In the present embodiment, the method of bonding the intermediate layer and the piezoelectric material layer 202 includes: the first dielectric layer 201 is bonded to the piezoelectric material layer 202.
In this embodiment, the method for bonding the first dielectric layer 201 and the piezoelectric material layer 202 includes: and bonding the first dielectric layer 201 and the piezoelectric material layer 202. It should be noted that the normal temperature bonding technology and the high temperature bonding technology known to those skilled in the art can be applied to the method for forming the surface acoustic wave resonator device in the embodiment of the present invention, and the influence on the yield of the device is small.
Referring to fig. 6, the piezoelectric material layer 202 is thinned to form the piezoelectric layer 203.
In this embodiment, the first dielectric layer 201 is made of a material having a larger acoustic impedance difference from that of the piezoelectric layer 203 to form an acoustic reflection structure, and the first dielectric layer 201 can effectively reduce the radiation of the surface wave energy of the piezoelectric layer 203 to the device, so as to effectively improve the Q value of the surface acoustic wave resonator.
In this embodiment, a method for thinning the piezoelectric material layer 202 includes: and thinning the piezoelectric material layer 202 by adopting a mechanical polishing process to form the piezoelectric layer 203.
Since the piezoelectric layer 203 is formed by thinning the piezoelectric material layer 202, the material of the piezoelectric layer 203 is the same as that of the piezoelectric material layer 202.
The material of the piezoelectric layer 203 includes: aluminum nitride, aluminum nitride alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, or lead magnesium niobate-lead titanate. In this embodiment, lithium niobate is used as the material of the piezoelectric layer 203.
In this embodiment, since the material of the piezoelectric layer 203 is the same as that of the substrate 200, the problem of a large difference between the thermal expansion coefficients of the piezoelectric layer 203 and the substrate 200 can be effectively solved, and the risk of fracture due to high temperature processing in the device manufacturing process can be further reduced, so as to improve the yield.
Referring to fig. 7 and 8, fig. 8 isbase:Sub>A schematic cross-sectional view taken along linebase:Sub>A-base:Sub>A of fig. 7, and an electrode structure 204 is formed on the piezoelectric layer 203.
In this embodiment, the method of forming the electrode structure 204 includes: forming a plurality of first electrode bars 2041 and a first bus 2042 connecting the plurality of first electrode bars 2041; a plurality of second electrode stripes 2043 and a second bus 2044 connecting the plurality of second electrode stripes 2043 are formed, and the plurality of first electrode stripes 2041 and the plurality of second electrode stripes 2043 are located between the first bus 2042 and the second bus 2044 and are staggered.
The material of the electrode structure 204 includes: aluminum, aluminum alloys, one or more of molybdenum, ruthenium, tungsten, platinum, iridium, copper, chromium, magnesium, scandium, and tantalum. In this embodiment, molybdenum and aluminum are used as the material of the electrode structure 204.
Accordingly, in an embodiment of the present invention, a surface acoustic wave resonator device is further provided, with continued reference to fig. 7 and 8, including: a substrate 200; an intermediate layer on the substrate 200, the material of the intermediate layer comprising: silicified silicon carbide; a piezoelectric layer 203 on the intermediate layer, the material of the piezoelectric layer 203 being the same as the material of the substrate 200; an electrode structure 204 on the piezoelectric layer 203.
In this embodiment, since the material of the piezoelectric layer 203 is the same as that of the substrate 200, the problem of a large difference between the thermal expansion coefficients of the piezoelectric layer 203 and the substrate 200 can be effectively solved, and the risk of fracture due to high temperature processing in the device manufacturing process can be further reduced, so as to improve the yield.
In this embodiment, the intermediate layer includes: a first dielectric layer 201 for forming an acoustic reflection structure. The radiation of the surface wave energy of the piezoelectric layer 203 to the device can be effectively reduced through the first medium layer 201, so that the Q value of the surface acoustic wave resonance device is effectively improved.
In this embodiment, the electrode structure 204 includes: the first electrode bars 2041 and the second electrode bars 2044 are disposed between the first bus 2042 and the second bus 2044 and are disposed in a staggered manner.
The material of the substrate 200 includes: aluminum nitride, aluminum nitride alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, or lead magnesium niobate-lead titanate. In this embodiment, the material of the substrate 200 is lithium niobate.
The material of the piezoelectric layer 203 includes: aluminum nitride, aluminum nitride alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, or lead magnesium niobate-lead titanate. In this embodiment, lithium niobate is used as the material of the piezoelectric layer 203.
The material of the electrode structure 204 includes: aluminum, aluminum alloys, one or more of molybdenum, ruthenium, tungsten, platinum, iridium, copper, chromium, magnesium, scandium, and tantalum. In the present embodiment, molybdenum and aluminum are used as the material of the electrode structure 204.
The material of the first dielectric layer 201 includes: silicon or silicon carbide. In this embodiment, the first dielectric layer 201 is made of silicon.
Fig. 9 to 11 are schematic structural views of steps of a method of forming a surface acoustic wave resonator device according to another embodiment of the present invention.
In the present embodiment, a method of forming a surface acoustic wave resonator device is described on the basis of the above-described embodiment (fig. 2), which is different from the above-described embodiment in that: forming the intermediate layer further comprises: and forming a second dielectric layer on the first dielectric layer after forming the first dielectric layer. Which will be described in detail below with reference to the accompanying drawings.
Referring to fig. 9, an intermediate layer is formed on the substrate 200.
In this embodiment, the method of forming the intermediate layer includes: forming a first dielectric layer 301 on the substrate 200 for forming an acoustic reflection structure; and forming a second dielectric layer 302 on the first dielectric layer 301 for temperature compensation.
The material of the first dielectric layer 301 comprises: silicon or silicon carbide. In this embodiment, the first dielectric layer 301 is made of silicon.
The material of the second dielectric layer 302 includes: silicon dioxide, silicon oxyfluoride or silicon oxycarbide. In this embodiment, the material of the second dielectric layer 302 is silicon dioxide.
Referring to fig. 10, after the intermediate layer is formed, the intermediate layer and the piezoelectric layer 203 are bonded, the piezoelectric layer 203 is located on the intermediate layer, the intermediate layer is located between the substrate 200 and the piezoelectric layer 203, and the material of the piezoelectric layer 203 is the same as that of the substrate 200, wherein the method of bonding the intermediate layer and the piezoelectric layer 203 includes forming the piezoelectric layer 203.
In this embodiment, the first dielectric layer 301 can effectively reduce the radiation of the surface wave energy of the piezoelectric layer 203 into the device, so as to effectively improve the Q value of the surface acoustic wave resonator. In this embodiment, the second dielectric layer 302 and the piezoelectric layer 203 have opposite Temperature Frequency shift characteristics, so that a Temperature Coefficient of Frequency (TCF) can be reduced and tends to 0ppm/° c, thereby improving the characteristic that the operating Frequency of the surface acoustic wave resonator shifts with the operating Temperature, and having higher Frequency-Temperature stability.
In this embodiment, the method of bonding the intermediate layer and the piezoelectric layer 203 includes: the second dielectric layer 302 is bonded to the piezoelectric layer 203, and the second dielectric layer 302 is located between the first dielectric layer 301 and the piezoelectric layer 203.
In this embodiment, the method for bonding the second dielectric layer 302 and the piezoelectric layer 203 includes: before the thinning process is performed on the piezoelectric material layer 202, the second dielectric layer 302 and the piezoelectric material layer 202 are bonded. It should be noted that the normal temperature bonding technology and the high temperature bonding technology known to those skilled in the art can be applied to the method for forming the surface acoustic wave resonator device in the embodiment of the present invention, and the influence on the yield of the device is small.
In the present embodiment, the forming process of the piezoelectric layer 203 and the effect of the material of the piezoelectric layer 203 being the same as the material of the substrate 200 are specifically described with reference to fig. 4 to 6 and the related description, which will not be repeated herein.
Referring to fig. 11, an electrode structure 204 is formed on the piezoelectric layer 203.
In the present embodiment, the method for forming the electrode structure 204 and the material of the electrode structure are specifically described with reference to fig. 7 and 8 and the related description, which will not be repeated herein.
Accordingly, an embodiment of the present invention further provides a surface acoustic wave resonator device, please refer to fig. 11, including: a substrate 200; an intermediate layer on the substrate 200, the material of the intermediate layer comprising: silicon or silicon carbide; a piezoelectric layer 203 on the intermediate layer, the material of the piezoelectric layer 203 being the same as the material of the substrate 200; an electrode structure 204 on the piezoelectric layer 203.
In this embodiment, the intermediate layer includes: a first dielectric layer 301 for forming an acoustically reflective structure; and a second dielectric layer 302 positioned between the first dielectric layer 301 and the piezoelectric layer 203 for temperature compensation. The radiation of the surface wave energy of the piezoelectric layer 203 to the device can be effectively reduced through the first medium layer 301, so that the Q value of the surface acoustic wave resonance device is effectively improved. The second dielectric layer 302 and the piezoelectric layer 203 have opposite Temperature Frequency shift characteristics, so that a Temperature Coefficient of Frequency (TCF) can be reduced and tends to be 0 ppm/DEG C, thereby improving the characteristic that the operating Frequency of the surface acoustic wave resonator drifts along with the operating Temperature and having higher Frequency-Temperature stability.
Fig. 12 to 14 are schematic structural views of steps of a method of forming a surface acoustic wave resonator device according to still another embodiment of the present invention.
In the present embodiment, a method of forming a surface acoustic wave resonator device is described on the basis of the above-described embodiment (fig. 5), which is different from the above-described embodiment in that: and thinning the piezoelectric material layer. The following detailed description will be made with reference to the accompanying drawings.
Referring to fig. 12, ion implantation is performed on the piezoelectric material layer 202 to form a thinned interface 401 in the piezoelectric material layer 202.
In the present embodiment, the thinned interface 401 formed in the piezoelectric material layer 202 is implanted ions, and the implanted ions can break the lattice arrangement in the piezoelectric material layer 202.
Referring to fig. 13, the piezoelectric material layer 202 on the thinning interface 401 is removed by an annealing and peeling process to form the piezoelectric layer 203.
In this embodiment, since the thinning interface 401 destroys the lattice arrangement in the piezoelectric material layer 202, after high-temperature annealing, the piezoelectric material layer 202 may be broken from the thinning interface 401, and then the piezoelectric material layer 202 located on the thinning interface 401 is peeled off, so that the piezoelectric layer 203 may be formed.
In the present embodiment, the material of the piezoelectric layer 203 and the material of the substrate 200 are the same, please refer to fig. 4 to fig. 6 and the related description, which will not be repeated herein.
Referring to fig. 14, an electrode structure 204 is formed on the piezoelectric layer 203.
In the present embodiment, please refer to fig. 7 and 8 and the related description for details of a method for forming the electrode structure 204 and a material of the electrode structure 204, which will not be repeated herein.
Fig. 15 to 17 are schematic structural views of steps of a method of forming a surface acoustic wave resonator device according to still another embodiment of the present invention.
In the present embodiment, a method of forming a surface acoustic wave resonator device is explained on the basis of the above-described embodiment (fig. 10), which is different from the above-described embodiment in that: and thinning the piezoelectric material layer. The following detailed description will be made with reference to the accompanying drawings.
Referring to fig. 15, ion implantation is performed on the piezoelectric material layer 202 to form a thinned interface 501 in the piezoelectric material layer 202.
In the present embodiment, the thinned interface 501 formed in the piezoelectric material layer 202 is implanted ions, and the implanted ions can break the lattice arrangement in the piezoelectric material layer 202.
Referring to fig. 16, the piezoelectric material layer 202 on the thinned interface 501 is removed by an annealing and peeling process to form the piezoelectric layer 203.
In this embodiment, since the thinning interface 501 destroys the lattice arrangement in the piezoelectric material layer 202, after high-temperature annealing, the piezoelectric material layer 202 may be broken from the thinning interface 401, and then the piezoelectric material layer 202 on the thinning interface 501 is peeled off, so that the piezoelectric layer 203 may be formed.
In the present embodiment, the material of the piezoelectric layer 203 and the material of the substrate 200 are the same, please refer to fig. 4 to fig. 6 and the related description, which will not be repeated herein.
Referring to fig. 17, an electrode structure 204 is formed on the piezoelectric layer 203.
In the present embodiment, please refer to fig. 7 and 8 and the related description for details of a method for forming the electrode structure 204 and a material of the electrode structure 204, which will not be repeated herein.
It is understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes in light thereof will be suggested to persons skilled in the art and are to be included within the spirit and purview of this application and scope of the appended claims.
Claims (15)
1. A surface acoustic wave resonator device, comprising:
a substrate;
an intermediate layer on the substrate, the material of the intermediate layer comprising: silicon or silicon carbide;
a piezoelectric layer on the intermediate layer, the piezoelectric layer being of the same material as the substrate;
an electrode structure on the piezoelectric layer.
2. A surface acoustic wave resonator device according to claim 1, wherein said intermediate layer includes: a first dielectric layer for forming an acoustic reflection structure; the material of the first dielectric layer comprises: silicon or silicon carbide.
3. A surface acoustic wave resonator device as set forth in claim 2, wherein said intermediate layer further comprises: the second dielectric layer is positioned between the first dielectric layer and the piezoelectric layer and used for temperature compensation; the material of the second dielectric layer comprises: silicon dioxide, silicon oxyfluoride or silicon oxycarbide.
4. A surface acoustic wave resonator device as set forth in claim 1, wherein said electrode structure includes: the first bus is connected with the first electrode strips; the first electrode strips and the second electrode strips are positioned between the first bus bars and the second bus bars and are arranged in a staggered mode.
5. A surface acoustic wave resonator device, as set forth in claim 1, wherein the material of said substrate includes: aluminum nitride, aluminum nitride alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, or lead magnesium niobate-lead titanate.
6. A surface acoustic wave resonator device, as set forth in claim 1, wherein the material of said piezoelectric layer includes: aluminum nitride, aluminum nitride alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, or lead magnesium niobate-lead titanate.
7. A surface acoustic wave resonator device according to claim 1, wherein the material of said electrode structure includes: aluminum, aluminum alloys, one or more of molybdenum, ruthenium, tungsten, platinum, iridium, copper, chromium, magnesium, scandium, and tantalum.
8. A method of forming a surface acoustic wave resonator device, comprising:
providing a substrate;
forming an intermediate layer on the substrate;
bonding the intermediate layer and a piezoelectric layer, the piezoelectric layer being located on the intermediate layer, the intermediate layer being located between the substrate and the piezoelectric layer, the piezoelectric layer being of the same material as the substrate, wherein the method of bonding the intermediate layer and the piezoelectric layer comprises forming the piezoelectric layer;
forming an electrode structure on the piezoelectric layer.
9. A method of forming a surface acoustic wave resonator device as set forth in claim 8, wherein the method of forming the intermediate layer includes: forming a first dielectric layer on the substrate; the material of the first dielectric layer comprises: silicon or silicon carbide.
10. A method of forming a surface acoustic wave resonator device as set forth in claim 9, wherein the method of bonding the intermediate layer and the piezoelectric layer includes: and bonding the first medium layer and the piezoelectric layer, wherein the first medium layer is positioned between the substrate and the piezoelectric layer.
11. A method for forming a surface acoustic wave resonator device as claimed in claim 9, wherein the method for forming the intermediate layer further comprises: forming a second dielectric layer on the first dielectric layer; the material of the second dielectric layer comprises: silicon dioxide, silicon oxyfluoride or silicon oxycarbide.
12. A method of forming a surface acoustic wave resonator device according to claim 11, wherein the method of bonding said intermediate layer and piezoelectric layer comprises: and bonding the second medium layer and the piezoelectric layer, wherein the second medium layer is positioned between the first medium layer and the piezoelectric layer.
13. A method of forming a surface acoustic wave resonator device according to claim 8, wherein the method of bonding said intermediate layer and piezoelectric layer comprises: providing a layer of piezoelectric material; bonding the intermediate layer and the piezoelectric material layer.
14. A method of forming a surface acoustic wave resonator device according to claim 13, wherein the method of forming the piezoelectric layer comprises: and thinning the piezoelectric material layer.
15. A method of forming a surface acoustic wave resonator device as set forth in claim 8, wherein the method of forming the electrode structure includes: forming a plurality of first electrode bars and a first bus bar connecting the plurality of first electrode bars; and forming a plurality of second electrode strips and a second bus bar connected with the plurality of second electrode strips, wherein the plurality of first electrode strips and the plurality of second electrode strips are positioned between the first bus bar and the second bus bar and are arranged in a staggered manner.
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| CN202211118771.1A CN115225060A (en) | 2022-09-15 | 2022-09-15 | Surface acoustic wave resonator device and method of forming the same |
| PCT/CN2023/118484 WO2024055980A1 (en) | 2022-09-15 | 2023-09-13 | Surface acoustic wave resonance device and forming method therefor |
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| CN115567027A (en) * | 2022-11-03 | 2023-01-03 | 常州承芯半导体有限公司 | Energy conversion device, surface acoustic wave resonance device, forming method of surface acoustic wave resonance device and filtering device |
| WO2024055980A1 (en) * | 2022-09-15 | 2024-03-21 | 常州承芯半导体有限公司 | Surface acoustic wave resonance device and forming method therefor |
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| JP2006222512A (en) * | 2005-02-08 | 2006-08-24 | Seiko Epson Corp | Surface acoustic wave device |
| CN101958696A (en) * | 2010-09-27 | 2011-01-26 | 张�浩 | Temperature compensation film bulk wave resonator and processing method thereof |
| WO2021258442A1 (en) * | 2020-06-22 | 2021-12-30 | 深圳市信维通信股份有限公司 | Bulk acoustic wave resonance apparatus, filter apparatus, and radio frequency front end apparatus |
| CN113890501A (en) * | 2021-12-01 | 2022-01-04 | 常州承芯半导体有限公司 | Method for forming surface acoustic wave resonance device |
| CN114337581A (en) * | 2022-03-17 | 2022-04-12 | 常州承芯半导体有限公司 | Method for forming bulk acoustic wave resonator |
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| US11528006B2 (en) * | 2020-06-22 | 2022-12-13 | Shenzhen Sunway Communication Co., Ltd. | BAW resonance device, filter device and RF front-end device |
| CN115225060A (en) * | 2022-09-15 | 2022-10-21 | 常州承芯半导体有限公司 | Surface acoustic wave resonator device and method of forming the same |
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| JP2006222512A (en) * | 2005-02-08 | 2006-08-24 | Seiko Epson Corp | Surface acoustic wave device |
| CN101958696A (en) * | 2010-09-27 | 2011-01-26 | 张�浩 | Temperature compensation film bulk wave resonator and processing method thereof |
| WO2021258442A1 (en) * | 2020-06-22 | 2021-12-30 | 深圳市信维通信股份有限公司 | Bulk acoustic wave resonance apparatus, filter apparatus, and radio frequency front end apparatus |
| CN113890501A (en) * | 2021-12-01 | 2022-01-04 | 常州承芯半导体有限公司 | Method for forming surface acoustic wave resonance device |
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| WO2024055980A1 (en) * | 2022-09-15 | 2024-03-21 | 常州承芯半导体有限公司 | Surface acoustic wave resonance device and forming method therefor |
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