CN115101581B - Flexible semiconductor structure, system and forming method thereof - Google Patents
Flexible semiconductor structure, system and forming method thereof Download PDFInfo
- Publication number
- CN115101581B CN115101581B CN202210750557.1A CN202210750557A CN115101581B CN 115101581 B CN115101581 B CN 115101581B CN 202210750557 A CN202210750557 A CN 202210750557A CN 115101581 B CN115101581 B CN 115101581B
- Authority
- CN
- China
- Prior art keywords
- flexible
- sandwich structure
- semiconductor
- strain
- end strip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 104
- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000008859 change Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 58
- 239000010409 thin film Substances 0.000 claims description 34
- 239000010410 layer Substances 0.000 claims description 31
- 239000010408 film Substances 0.000 claims description 16
- 229920001721 polyimide Polymers 0.000 claims description 11
- 230000009471 action Effects 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 25
- 239000002184 metal Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000007687 exposure technique Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
A flexible semiconductor structure, and a system and method of forming the same are provided. The flexible semiconductor structure comprises a flexible multistable three-dimensional microstructure (1) and a semiconductor film (2), wherein the flexible multistable three-dimensional microstructure comprises a sandwich structure (12), the sandwich structure (12) is a planar structure capable of buckling deformation in a first direction and a second direction which are intersected with each other, and the semiconductor film (2) is formed on one side of the sandwich structure (12) in a third direction perpendicular to the first direction and the second direction and deforms along with the deformation of the sandwich structure (12) so as to change the energy gap of the semiconductor film (2). By adopting the technical scheme, the flexible semiconductor structure with adjustable conductivity can be obtained.
Description
Technical Field
The present disclosure relates to the field of engineering material fabrication, and more particularly, to a flexible semiconductor structure, a system and a method of forming the same.
Background
Currently, the conductivity of semiconductors can be enhanced by introducing biaxial strain to the semiconductor material with the substrate or uniaxial strain to the semiconductor material with other semiconductor processes to enhance carrier mobility. This process of using strain to manipulate physical properties of a material is known as "strain engineering". Strain engineering has been widely used in the field of regulating semiconductor energy bands and the like.
The energy gap, which is one of the intrinsic properties of semiconductor materials, is derived from a periodic crystal potential field that is stable within the material. When the crystal lattice of the crystal is distorted due to strain, the originally stable periodic crystal field is changed, and the energy gap of the material is correspondingly changed. The physical parameters and the geometric parameters of the material can be designed to change the energy band structure and regulate the energy gap of the material so as to optimize the properties of the semiconductor in the aspects of electricity, optics and the like, thereby obtaining a new device material with more excellent performance.
The manner in which stress is applied to semiconductor materials has been accomplished primarily by epitaxy, i.e., by utilizing dislocations resulting from lattice mismatch of the growth material and the substrate to obtain intrinsic internal stresses. This method is simple and easy to implement, but the resulting stress has no gradient distribution and thus the stress magnitude direction cannot be changed. This approach is limited in cases where adjustments to the conductivity properties of the semiconductor material are required. Accordingly, there is a need for a flexible semiconductor structure that is capable of tuning the conductivity properties.
Disclosure of Invention
The present application has been made in view of the above state of the art, and it is an object of the present application to provide a flexible semiconductor structure capable of adjusting conductive properties, and a system and a method of forming the same.
A first aspect of the present application provides a flexible semiconductor structure including a flexible multistable three-dimensional microstructure including a sandwich structure which is a planar structure capable of buckling deformation in a first direction and a second direction crossing each other, and a semiconductor thin film formed on one side of the sandwich structure in a third direction perpendicular to the first direction and the second direction and deformed as the sandwich structure is deformed to change an energy gap of the semiconductor thin film.
In at least one embodiment, the sandwich structure comprises a first end strip extending along the first direction, a second end strip, and a plurality of connecting strips connected at one end to the first end strip and at the other end to the second end strip, the first end strip and the second end strip being arranged at intervals along the second direction,
at least one of the first end strap, the second end strap, and the plurality of connecting straps can be electromagnetically acted upon by an ampere force.
In at least one embodiment, the sandwich structure flexes and deforms in the first direction before the ampere force is applied, and flexes and deforms in the second direction after the ampere force is applied.
In at least one embodiment, the flexible multistable three-dimensional microstructure further comprises a flexible substrate capable of tensile deformation, the flexible substrate being prestrained in the first direction and prestrained in the second direction, the flexible substrate to which the first prestrained and the second prestrained are applied being connected to the sandwich structure of a planar structure, the flexible substrate being located on a side of the sandwich structure opposite to the semiconductor thin film in the third direction.
In at least one embodiment, the sandwich structure comprises two substrate layers overlapping in the third direction and one conductive layer between the two substrate layers,
the conductive layer is disposed in one or more of the first end strip, the second end strip, and the plurality of connection strips so as to be capable of being applied with an electric current.
In at least one embodiment, the substrate layer is polyimide, the thickness of the single layer substrate layer is 5-15 micrometers,
the conducting layer is made of gold with the thickness of 200-400 nanometers,
the semiconductor film is made of indium tin oxide and has a thickness of 200-400 nanometers.
A second aspect of the present application provides a flexible semiconductor structure system comprising:
the flexible semiconductor structure described in the above technical scheme;
a strain applying section for stretching the flexible substrate and releasing the stretching of the flexible substrate; a current application section for applying a current to the sandwich structure; and
and a magnetic field applying section for applying a magnetic field to the sandwich structure.
A third aspect of the present application provides a method of forming a flexible semiconductor structure, comprising forming a semiconductor thin film on a flexible multistable three-dimensional microstructure,
the flexible multistable three-dimensional microstructure includes a sandwich structure which is a planar structure capable of buckling deformation in a first direction and a second direction intersecting each other, and the semiconductor thin film is formed on one side of the sandwich structure in a third direction perpendicular to the first direction and the second direction, and is deformed with deformation of the sandwich structure to change an energy gap of the semiconductor thin film.
In at least one embodiment, the flexible multistable three-dimensional microstructure comprises a flexible substrate to which a first pre-strain is applied in the first direction and a second pre-strain is applied in the second direction,
the forming method comprises the following steps: the sandwich structure is connected to the flexible substrate to which the first pre-strain and the second pre-strain are applied.
In at least one embodiment, a method of forming a flexible semiconductor structure includes:
releasing the first pre-strain applied to the flexible substrate, causing both sides of the sandwich structure in the second direction to bulge in the third direction;
applying a magnetic field to the sandwich structure;
applying an electrical current to the sandwich structure such that a portion of the sandwich structure is electromagnetically acted upon by an ampere force; and
releasing a second pre-strain applied to the flexible substrate, bringing both sides of the sandwich structure in the second direction closer to each other in the second direction,
the sandwich structure comprising a first end strip extending along the first direction, a second end strip and a plurality of connecting strips connected at one end to the first end strip and at the other end to the second end strip, the first end strip and the second end strip being arranged at a distance along the second direction,
wherein the energy gap of the semiconductor thin film formed on the first end strip and the second end strip is adjusted by changing the magnitude of the first pre-strain,
the energy gap of the semiconductor thin film formed on the connection strip is adjusted by changing the second pre-strain, and/or the energy gap of the semiconductor thin film formed on the connection strip is adjusted by adjusting the direction of the current.
By adopting the technical scheme, the flexible semiconductor structure with adjustable conductivity can be obtained.
Drawings
Fig. 1 shows a schematic view of a flexible semiconductor structure according to one embodiment of the present application.
Fig. 2 shows a cross-sectional view of a sandwich structure according to an embodiment of the present application.
Fig. 3 shows a schematic diagram of steps for preparing a flexible semiconductor structure according to one embodiment of the present application.
Fig. 4 shows a schematic perspective view of a flexible semiconductor structure when pretensioning of only a first direction of a flexible substrate is released according to one embodiment of the present application.
Fig. 5 shows a schematic perspective view of a flexible semiconductor structure switched to a first steady state structure according to one embodiment of the present application.
Fig. 6 shows a schematic perspective view of a flexible semiconductor structure switched to a second steady state structure according to one embodiment of the present application.
Fig. 7 shows a schematic perspective view of a flexible semiconductor structure switched to a third steady state structure according to one embodiment of the present application.
Fig. 8 shows a schematic perspective view of a flexible semiconductor structure switched to a fourth steady state structure according to one embodiment of the present application.
Detailed Description
Exemplary embodiments of the present application are described below with reference to the accompanying drawings. It should be understood that these specific descriptions are merely illustrative of how one skilled in the art may practice the present application and are not intended to be exhaustive of all of the possible ways of practicing the present application nor to limit the scope of the present application.
The technical idea of the present application is schematically described below. The application provides a flexible semiconductor structure, a flexible semiconductor structure system and a forming method of the flexible semiconductor structure. The flexible semiconductor structure comprises a flexible multistable three-dimensional microstructure 1 and a semiconductor film 2. The semiconductor thin film 2 is formed on the flexible multistable three-dimensional microstructure 1 and is deformed with deformation of the flexible multistable three-dimensional microstructure 1 to change the energy gap of the semiconductor thin film 2. According to the present application, the conductivity of the semiconductor thin film 2 can be changed by changing the energy gap of the semiconductor thin film 2.
The first direction in this application refers to the x-direction shown in fig. 1, the second direction refers to the y-direction shown in fig. 1, and the third direction refers to the z-direction shown in fig. 1, unless otherwise specified.
As shown in fig. 1, the flexible multistable three-dimensional microstructure 1 of the present application comprises a flexible substrate 11 and a sandwich structure 12. Wherein the flexible substrate 11 is a planar structure capable of stretching in a first direction and a second direction, and may have a tensile strain ε in the first direction x Has a tensile strain epsilon in a second direction y . The sandwich structure 12 is also a planar structure and is connected to the flexible substrate 11 in a state in which the flexible substrate 11 is stretched in the first direction and the second direction. The flexible substrate 11 is located on one side of the sandwich structure 12 in the third direction.
In the present embodiment, the material of the flexible substrate 11 may be PDMS (polydimethylsiloxane). The flexible substrate 11 having great elasticity can be prepared by adopting a manner of standing casting.
Furthermore, as shown in fig. 2, the sandwich structure 12 comprises a first end strip 121, a second end strip 122 and two connecting strips 123, 124. The first end strap 121 and the second end strap 122 each extend along a first direction, and the first end strap 121 and the second end strap 122 are arranged at intervals along a second direction. The connecting straps 123, 124 are connected at one end to the first end strap 121 and at the other end to the second end strap 122. Here, the connection strap may be a straight strap or a curved strap.
Further, first end connection portions 121a, 121b as end connection portions may be provided at both ends of the first end strap 121, and second end connection portions 122a, 122b as end connection portions may be provided at both ends of the second end strap 122 to be connected to the flexible substrate 11.
Further, the sandwich structure 12 includes two base layers and one conductive layer stacked in the third direction. Wherein the conductive layer is located between the two substrate layers. In this embodiment, the material of the base layer may be polyimide, and the material of the conductive layer may be metal, as shown in step S8 of fig. 3. Here, the conductive layer may extend to the first end connection parts 121a, 121b and the second end connection parts 122a, 122b, so that a current can be applied thereto via the first end connection parts 121a, 121b and the second end connection parts 122a, 122 b.
Specifically, as shown in the hatched area of fig. 2, the conductive layer includes a plurality of individual wires 12a1, 12a2. The wire 12a1 extends from one end of the first end strap 121 to one end of the second end strap 122 via the connecting strap 123. The wire 12a2 extends from the other end of the first end strap 121 to the other end of the second end strap 122 via the connecting strap 124.
Further, as shown in fig. 1 and 4, the semiconductor thin film 2 is formed on the side of the sandwich structure 12 opposite to the flexible substrate 11 in the third direction by deposition or the like. That is, in the third direction, the sandwich structure 12 is located between the semiconductor thin film 2 and the flexible substrate 11. The shape of the semiconductor film 2 may be the same as the shape of the sandwich structure 2 constituted by the first end strip 121, the second end strip 122 and the connecting strips 123, 124.
Here, the third direction may be regarded as a thickness direction of the flexible substrate 11 or the flexible semiconductor structure.
The principle of adjusting the conductivity of the flexible semiconductor structure will be described below.
The carrier mobility and other conductive properties of a semiconductor material are determined by the energy band of the semiconductor material. When the energy gap in the energy band is small, energy transition is easy, and thus carrier mobility is larger. The energy gap of the semiconductor material may be changed by changing the strain of the material, thereby changing the conductive properties of the semiconductor material.
In this embodiment, the formula for the strain at the top position when the strip arches is:
where ε is the total strain at the top position of the strip ε membrane The semiconductor film 2 at the top position of the strip is strained, ε bending A is the camber height of the strip, h is the thickness of the strip, L 0 Is the initial length of the strip in its natural state. Here, the tape includes a sandwich structure 12 and a semiconductor thin film 2 formed on the sandwich structure 12.
Generally, ε membrane The value of (2) is much smaller than epsilon bending Thus, epsilon is substantially composed of epsilon bending And (5) determining. Thus, it can be seen from the above formula that if ε is to be increased bending It is possible to increase the arch height A, increase the thickness h and decrease the initial length L 0 In the form of (a). Typically, the camber a is increased for ease of adjustment. In addition, when a is greater than 0, the top of the strip is tensile strained, the energy gap is reduced, and the carrier mobility is greater. When A is smaller than 0, the top of the strip is compressive strain, the energy gap is increased, and the carrier mobility is smaller.
Hereinafter, a process of adjusting the conductive properties of the flexible semiconductor structure of the present application will be described.
The flexible substrate 11 is held on a biaxial stretching stage for biaxial pre-stretching. Specifically, the arch height a of the first and second end strips 121 and 122 may be set by setting a first pre-strain of the flexible substrate 11 in the first direction, thereby adjusting the strain of the semiconductor thin films formed on the first and second end strips 121 and 122. Further, the arch height a of the connection strips 123, 124 may be set by setting the second pre-strain of the flexible substrate 11 in the second direction, thereby adjusting the strain of the semiconductor thin film formed on the connection strips 123, 124.
The sandwich structure 12 is then transferred from the silicon wafer to the biaxially pre-stretched flexible substrate 11 and the sandwich structure 12 is bonded to the flexible substrate 11 with an adhesive at the first end connections 121a, 121b and the second end connections 122a, 122b, as shown in fig. 1.
Next, the pretensioning strain of the flexible substrate 11 in the first direction is released, and the pretensioning strain in the second direction is kept unchanged. At this time, the sandwich structure 12 is deformed from a planar structure to a three-dimensional structure of a bulge due to buckling caused by compressive strain in the first direction, as shown in fig. 4.
Then, a permanent magnet as a magnetic field applying portion is disposed so that the magnetic field direction thereof is along the third direction. The above-mentioned three-dimensional structure of ridges is placed in a magnetic field B and an electric current is applied to the two wires 12a1, 12a2 in the sandwich structure 2, respectively, by applying an applied current source. The conductive wire is acted by ampere force in the magnetic field when being electrified, so that the connecting strip is correspondingly deformed. Then, releasing the pretensioning strain in the second direction of the flexible substrate 11 will cause the sandwich structure 2 to further flex into a variety of steady-state structures. In this embodiment, since two connection strips 123, 124 are included, the sandwich structure 2 can be switched in the following four steady-state structures by adjusting the direction of the applied current. Here, the direction of the applied current and the direction of the magnetic field B input to the sandwich structure 12 determine the arching direction of the connecting strips 123, 124, i.e. whether the top position of the connecting strips 123, 124 is under tensile or compressive strain.
Hereinafter, four steady-state structures of the present application are described.
First steady state Structure
As shown in fig. 5, an upward magnetic field B is applied to the flexible semiconductor structure, and the left side of the sandwich 12 is wired up with an applied current I. The electrode at the left end of the first end strip 121 is connected to the negative electrode of the power supply, the electrode at the left end of the second end strip 122 is connected to the positive electrode of the power supply, and it can be determined that the connecting strip 123 is concave inwards under the action of ampere force by f=i×b. In addition, the right side of the sandwich structure 12 is wired to an external current source. The electrode at the right end of the first end strip 121 is connected to the positive electrode of the power supply, the electrode at the right end of the second end strip 122 is connected to the negative electrode of the power supply, and it can be determined that the connecting strip 124 is concave inwards under the action of ampere force by f=i×b. Releasing the pretensioned strain in the second direction of the flexible substrate 11, the first end strip 121 and the second end strip 122 being close to each other, will cause the sandwich structure 12 to buckle further into the first stable configuration as shown in fig. 5. At this time, the top positions of the connection strips 123 and 124 are both under pressure strain, and the carrier mobility is small.
Second steady state structure
As shown in fig. 6, an upward magnetic field B is applied to the flexible semiconductor structure, and the left side of the sandwich 12 is wired up with an applied current I. The electrode at the left end of the first end strip 121 is connected to the negative electrode of the power supply, the electrode at the left end of the second end strip 122 is connected to the positive electrode of the power supply, and it can be determined that the connecting strip 123 is concave inwards under the action of ampere force by f=i×b. In addition, the right side of the sandwich structure 12 is wired to an external current source. The electrode at the right end of the first end strip 121 is connected to the negative electrode of the power supply, the electrode at the right end of the second end strip 122 is connected to the positive electrode of the power supply, and it can be determined from f=i×b that the connecting strip 124 protrudes to the outside under the action of ampere force. Releasing the pretensioned strain in the second direction of the flexible substrate 11, the first end strip 121 and the second end strip 122 being close to each other, will cause the sandwich structure 12 to buckle further into the second stable configuration as shown in fig. 6. At this time, the top position of the connection stripe 123 is compressive strain, carrier mobility is small, and the top position of the connection stripe 124 is tensile strain, carrier mobility is large.
Third steady state Structure
As shown in fig. 7, an upward magnetic field B is applied to the flexible semiconductor structure, and the left side of the sandwich 12 is wired up with an applied current I. The electrode at the left end of the first end strip 121 is connected to the positive electrode of the power supply, the electrode at the left end of the second end strip 122 is connected to the negative electrode of the power supply, and it can be determined from f=i×b that the connecting strip 123 protrudes to the outside under the action of ampere force. In addition, the right side of the sandwich structure 12 is wired to an external current source. The electrode at the right end of the first end strip 121 is connected to the negative electrode of the power supply, the electrode at the right end of the second end strip 122 is connected to the positive electrode of the power supply, and it can be determined from f=i×b that the connecting strip 124 protrudes to the outside under the action of ampere force. Releasing the pretensioned strain in the second direction of the flexible substrate 11, the first end strip 121 and the second end strip 122 being close to each other, will cause the sandwich structure 12 to flex further into the third steady-state configuration shown in fig. 7. At this time, the top positions of the connection strips 123 and 124 are tensile strain, and carrier mobility is large.
Fourth steady state structure
As shown in fig. 8, an upward magnetic field B is applied to the flexible semiconductor structure, and the left side of the sandwich 12 is wired up with an applied current I. The electrode at the left end of the first end strip 121 is connected to the positive electrode of the power supply, the electrode at the left end of the second end strip 122 is connected to the negative electrode of the power supply, and it can be determined that the left connecting strip protrudes to the outside under the action of ampere force by f=i×b. In addition, the right side of the sandwich structure 12 is wired to an external current source. The electrode at the right end of the first end strip 121 is connected to the positive electrode of the power supply, the electrode at the right end of the second end strip 122 is connected to the negative electrode of the power supply, and f=i×b can determine that the connecting strip at the right side is concave inwards under the action of ampere force. Releasing the pretensioned strain in the second direction of the flexible substrate 11, the first end strip 121 and the second end strip 122 being close to each other, will cause the sandwich structure 12 to buckle further into a fourth steady-state structure as shown in fig. 8. At this time, the top position of the connection stripe 123 is tensile strain, carrier mobility is large, and the top position of the connection stripe 124 is compressive strain, carrier mobility is small.
A method of forming the flexible semiconductor structure of the present application will be described below with reference to fig. 3.
In the step S1, a silicon wafer with proper size is taken, a proper amount of Polyimide (PI) is spin-coated on the silicon wafer to form a polyimide film with the thickness of 5-15 mu m as a first substrate film, then the silicon wafer is placed on a heat table for pre-curing, and finally the silicon wafer is placed in an oven for heating and curing in a step heating mode. Here, the thickness of the polyimide film may preferably be 10 μm.
In step S2, the silicon wafer of the cured polyimide is cooled to room temperature, and a metal thin film as a conductive thin film is deposited by electron beam evaporation, and the film thickness may be 200 to 400nm. Here, the metal material may be gold. Here, the film thickness may preferably be 300nm.
In step S3, photoresist is spin-coated on the deposited metal film, a reticle with a designed pattern is mounted on a photolithography machine, and the coated photoresist is exposed and developed, leaving the patterned photoresist. Here, the pattern may correspond to a first pattern formed by the respective wires of the conductive layer.
In step S4, the metal not protected by the photoresist is etched using a metal etching solution to form a conductive layer, and then the photoresist is removed using acetone or a secondary exposure technique.
In step S5, a polyimide film as a second base film, a deposited metal as a paste film, and a photoresist are sequentially formed on the polyimide film on which the conductive layer is formed. The mask plate with the designed pattern is installed on a photoetching machine, and the coated photoresist is subjected to secondary exposure and development, so that the patterned photoresist is left. Here, the pattern may correspond to the second pattern formed by the base layer, and the metal may be copper.
In step S6, the metal not protected by the photoresist of step S5 is etched using a metal etching solution to form a metal pattern conforming to the mask pattern of step S5.
In step S7, the photoresist is removed using acetone or a double exposure technique. Next, reactive ion etching is performed to etch the portions of the polyimide film in step S1 and step S5 that are not protected by the metal pattern of step S6.
In step S8, the metal pattern is etched using a metal etching liquid, resulting in a final "base layer-conductive layer-base layer" sandwich structure 12.
In step S9, an indium tin oxide thin film is prepared using a magnetron sputtering system. Based on the sandwich structure 12, a Direct Current (DC) or Radio Frequency (RF) power source is utilized for Ar/O 2 A plasma is generated in the mixed gas to bombard the target, causing the cathode target to rapidly deposit onto the sandwich structure 12. The thickness of the indium tin oxide film after deposition is controlled to be 200nm to 400nm, for example 300nm.
Some of the advantageous effects of the above-described embodiments of the present application are briefly described below.
(1) According to the flexible semiconductor structure of the present application, by forming the semiconductor thin film 2 to the flexible multistable three-dimensional microstructure 1, the energy gap of the semiconductor thin film 2 can be adjusted by changing the deformation of the flexible multistable three-dimensional microstructure 1, thereby adjusting the conductive performance of the semiconductor thin film 2.
(2) According to the flexible semiconductor structure of the present application, the arch height of the first end strip and the second end strip or the arch height of the connection strip can be set by setting the pre-strain of the flexible substrate in the first direction or the second direction, thereby adjusting the strain formed at the top position of the semiconductor thin film described above. The type of strain at the top position of the connecting strip may also be determined by changing the direction of the current applied to the conductive layer. Thus, the conductivity of the semiconductor material can be flexibly adjusted in a variety of ways.
It is to be understood that in the present application, when the number of parts or members is not particularly limited, the number may be one or more, and the number herein refers to two or more. For the case where the number of parts or members is shown in the drawings and/or described in the specification as a specific number such as two, three, four, etc., the specific number is generally illustrative and not restrictive, it may be understood that a plurality, i.e., two or more, but this does not mean that the present application excludes one.
It should be understood that the above embodiments are merely exemplary and are not intended to limit the present application. Those skilled in the art can make various modifications and changes to the above-described embodiments without departing from the scope of the present application.
(i) For example, although in the present embodiment, the semiconductor thin film is formed on the side opposite to the flexible substrate in the third direction of the sandwich structure, it is not limited thereto. The semiconductor thin film may also be formed on the same side of the sandwich structure as the flexible substrate in the third direction.
(ii) For example, although the material of the semiconductor thin film is indium tin oxide in the present embodiment, other semiconductor materials and two-dimensional materials, for example, graphene, perovskite, or the like may be used.
(iii) For example, although the conductive layer includes two wires in the present embodiment, the number of wires may be more than two without being limited thereto.
(iv) For example, in the present embodiment, the first end portion connecting portion and the second end portion connecting portion are provided at both ends of the first end portion strip and the second end portion strip, respectively, but the present invention is not limited thereto, and the ends of the first end portion strip and the second end portion strip may be directly connected to the flexible substrate 11 without providing the first end portion connecting portion and the second end portion connecting portion.
(v) For example, although in the present embodiment, the first direction and the second direction are perpendicular to each other, this is not a limitation. The first direction and the second direction may also intersect each other at an acute or obtuse angle.
(vi) For example, although the connection strap is deformed by an ampere force in the present embodiment, it is not limited thereto. The first and second end straps may also deform under the force of an ampere force.
(vii) For example, although in the present embodiment, the flexible multistable three-dimensional structure includes a flexible substrate, it is not limited thereto. The strain may also be applied directly to the sandwich structure by micro devices.
Claims (7)
1. A flexible semiconductor structure characterized by comprising a flexible multistable three-dimensional microstructure (1) and a semiconductor thin film (2), the flexible multistable three-dimensional microstructure comprising a sandwich structure (12), the sandwich structure (12) being a planar structure capable of buckling deformation in a first direction and a second direction intersecting each other, the semiconductor thin film (2) being formed on one side of the sandwich structure (12) in a third direction perpendicular to the first direction and the second direction and being deformed with deformation of the sandwich structure (12) to change an energy gap of the semiconductor thin film (2),
the sandwich structure (12) comprises a first end strip (121) extending along the first direction, a second end strip (122) and a plurality of connecting strips (123, 124) connected at one end to the first end strip (121) and at the other end to the second end strip (122), the first end strip (121) and the second end strip (122) being arranged at a distance along the second direction,
at least one of the first end strap (121), the second end strap (122) and the plurality of connecting straps (123, 124) is capable of being subjected to an ampere force under electromagnetic action.
2. The flexible semiconductor structure of claim 1, wherein the flexible semiconductor structure comprises a plurality of conductive layers,
the sandwich structure (12) is buckling deformed in the first direction before the ampere force is applied, and the sandwich structure (12) is buckling deformed in the second direction after the ampere force is applied.
3. A flexible semiconductor structure as claimed in claim 1 or 2, wherein,
the flexible multistable three-dimensional microstructure (1) further comprises a flexible substrate (11) capable of tensile deformation, the flexible substrate (11) being applied with a first pre-strain in the first direction and with a second pre-strain in the second direction, the flexible substrate (11) being connected with the sandwich structure (12) of planar structure, the flexible substrate (11) being located on the side of the sandwich structure (12) opposite to the semiconductor thin film (2) in the third direction.
4. A flexible semiconductor structure as claimed in claim 1 or 2, wherein,
the sandwich structure (12) comprises two substrate layers overlapping in the third direction and one conductive layer between the two substrate layers,
the first end strip (121), the second end strip (122) and one or more of the plurality of connecting strips (123, 124) are provided with the conductive layer so as to be able to be applied with an electric current.
5. The flexible semiconductor structure of claim 4, wherein the flexible semiconductor structure comprises a plurality of conductive layers,
the base layer is made of polyimide, the thickness of the single-layer base layer is 5-15 micrometers,
the conducting layer is made of gold with the thickness of 200-400 nanometers,
the semiconductor film is made of indium tin oxide and has a thickness of 200-400 nanometers.
6. A flexible semiconductor structure system, comprising:
a flexible semiconductor structure according to claim 3;
a strain applying section for stretching the flexible substrate (11) and releasing the stretching of the flexible substrate (11);
a current application section for applying a current to the sandwich structure (12); and
a magnetic field applying part for applying a magnetic field to the sandwich structure (12).
7. A method for forming a flexible semiconductor structure is characterized by comprising the steps of forming a semiconductor film (2) on a flexible multistable three-dimensional microstructure (1),
the flexible multistable three-dimensional microstructure includes a sandwich structure (12), the sandwich structure (12) is a planar structure capable of buckling deformation in a first direction and a second direction intersecting each other, the semiconductor thin film (2) is formed on one side of the sandwich structure (12) in a third direction perpendicular to the first direction and the second direction, and deformation occurs with deformation of the sandwich structure (12) to change an energy gap of the semiconductor thin film (2),
the flexible multistable three-dimensional microstructure (1) comprises a flexible substrate (11) to which a first pre-strain is applied in the first direction and a second pre-strain is applied in the second direction,
the forming method comprises the following steps: -connecting the sandwich structure (12) to the flexible substrate (11) to which the first and second pre-strains are applied,
the method for forming the flexible semiconductor structure further comprises the following steps:
releasing the first pre-strain applied to the flexible substrate (11) such that both sides of the sandwich structure (12) in the second direction are raised in the third direction;
-applying a magnetic field to the sandwich structure (12);
-applying an electric current to the sandwich structure (12) such that a portion of the sandwich structure (12) is subjected to an ampere force under electromagnetic action; and
releasing the second pre-strain applied to the flexible substrate (11) such that two sides of the sandwich structure (12) in the second direction are close to each other in the second direction,
the sandwich structure (12) comprises a first end strip (121) extending along the first direction, a second end strip (122) and a plurality of connecting strips (123, 124) connected at one end to the first end strip (121) and at the other end to the second end strip (122), the first end strip (121) and the second end strip (122) being arranged at a distance along the second direction,
wherein the energy gap of the semiconductor film (2) formed on the first end strip (121) and the second end strip (122) is adjusted by changing the magnitude of the first pre-strain,
the energy gap of the semiconductor film (2) formed on the connection strips (123, 124) is adjusted by changing the second pre-strain, and/or the energy gap of the semiconductor film (2) formed on the connection strips (123, 124) is adjusted by adjusting the direction of the current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210750557.1A CN115101581B (en) | 2022-06-28 | 2022-06-28 | Flexible semiconductor structure, system and forming method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210750557.1A CN115101581B (en) | 2022-06-28 | 2022-06-28 | Flexible semiconductor structure, system and forming method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115101581A CN115101581A (en) | 2022-09-23 |
| CN115101581B true CN115101581B (en) | 2023-06-16 |
Family
ID=83294411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210750557.1A Active CN115101581B (en) | 2022-06-28 | 2022-06-28 | Flexible semiconductor structure, system and forming method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115101581B (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7491892B2 (en) * | 2003-03-28 | 2009-02-17 | Princeton University | Stretchable and elastic interconnects |
| US7521292B2 (en) * | 2004-06-04 | 2009-04-21 | The Board Of Trustees Of The University Of Illinois | Stretchable form of single crystal silicon for high performance electronics on rubber substrates |
| CN107240600B (en) * | 2017-06-26 | 2019-10-18 | 京东方科技集团股份有限公司 | A kind of flexible display apparatus |
-
2022
- 2022-06-28 CN CN202210750557.1A patent/CN115101581B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN115101581A (en) | 2022-09-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11207705B2 (en) | Mask and method of manufacturing mask assembly including the same | |
| US4256829A (en) | Method of manufacturing solid-state devices in which planar dimensional distortion is reduced | |
| US20080042543A1 (en) | Multiple shadow mask structure for deposition shadow mask protection and method of making and using same | |
| WO2007120322A2 (en) | Ground shields for semiconductors | |
| KR101521205B1 (en) | Selective continuous transferring apparatus using contact control | |
| Park et al. | Fabrication of well-controlled wavy metal interconnect structures on stress-free elastomeric substrates | |
| JPH0559576B2 (en) | ||
| CN115101581B (en) | Flexible semiconductor structure, system and forming method thereof | |
| JP2022103212A (en) | Frame body and vapor deposition mask | |
| KR101509282B1 (en) | A system for patterning flexible foils | |
| CN114955975B (en) | Flexible multistable three-dimensional microstructure and system and method of forming the same | |
| JP2018094661A (en) | Method for manufacturing fine three-dimensional structure | |
| CN110241382A (en) | The manufacturing method of the one-piece type mask of frame | |
| US11879170B2 (en) | Stress patterning systems and methods for manufacturing free-form deformations in thin substrates | |
| KR20160104561A (en) | Magnetic sensor and method of manufacturing the same | |
| US11358868B2 (en) | Device comprising physical properties controlled by microstructure and method of manufacturing the same | |
| JP2004207570A (en) | Stencil mask and its producing process | |
| CN114496350B (en) | Electrode, electronic device and device | |
| JP7413713B2 (en) | Vapor deposition mask manufacturing method and vapor deposition mask | |
| Takeshita et al. | Simulation and fabrication of a MEMS optical scanner device considering deformation caused by internal stress | |
| US11098955B2 (en) | Micro-scale wireless heater and fabrication method and applications thereof | |
| KR101986526B1 (en) | Producing method of mask | |
| Bonderover et al. | Amorphous silicon thin film transistors on kapton fibers | |
| JP4341296B2 (en) | Method for producing photonic crystal three-dimensional structure | |
| US20170068032A1 (en) | Wire grid polarizer plate and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |