CN114769199A - Wafer cleaning method and apparatus - Google Patents
Wafer cleaning method and apparatus Download PDFInfo
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- CN114769199A CN114769199A CN202210428388.XA CN202210428388A CN114769199A CN 114769199 A CN114769199 A CN 114769199A CN 202210428388 A CN202210428388 A CN 202210428388A CN 114769199 A CN114769199 A CN 114769199A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
Abstract
The invention relates to the technical field of wafer cleaning, in particular to a wafer cleaning method and device. The wafer cleaning method comprises the following steps: a pre-cleaning procedure, wherein in the pre-cleaning procedure, a first cleaning solution with the temperature of T1 is adopted to carry out spray cleaning on the wafer; a degumming and cleaning procedure, wherein in the degumming and cleaning procedure, a first cleaning solution with the temperature of T2 is adopted to at least immerse the bonding layer; a chemical cleaning step of immersing the wafer with a second cleaning liquid at a temperature of T2, the second cleaning liquid including an alkaline cleaning agent; and a pure water cleaning step of immersing the wafer with a first cleaning liquid having a temperature T2; through the steps, impurities such as dirt, particles and organic matters on the surface of the wafer can be removed more efficiently, so that a stable high-quality wafer is obtained, the quality risk of wafer degumming is reduced, and the production efficiency is improved.
Description
Technical Field
The invention relates to the technical field of wafer cleaning, in particular to a wafer cleaning method and device.
Background
Silicon carbide, one of the most important third-generation semiconductor materials, has excellent properties such as a large forbidden bandwidth, a high saturated electron mobility, a strong breakdown field, and a high thermal conductivity, and is widely used in the fields of power electronics, radio frequency devices, optoelectronic devices, and the like.
Since many organic and inorganic substances are required to participate in the processing of the SiC wafer, and many processes are required to be performed by human beings, the product is inevitably contaminated by impurities such as some organic substances, particles, metals, and oxides. In an integrated circuit made of silicon carbide, each element and a connecting line are very fine, so that if the integrated circuit is polluted by the impurities in the manufacturing process, the functions of the circuit in a chip are easily damaged, short circuit or open circuit is formed, the integrated circuit is failed, and serious loss is caused. Therefore, after the silicon carbide substrate is finally processed, the silicon carbide substrate must be kept clean to a high degree, and particularly for the first wafer cleaning process after line cutting, the surface of the wafer needs to be cleaned strictly by dirt such as mortar and oily substances, and otherwise the appearance quality inspection of the wafer and the grinding quality of the next process are affected.
At present, the wafer cleaning method after silicon carbide wire cutting mainly comprises the steps of degumming and cleaning the wafer which is not degummed in an ultrasonic cleaning machine, and the purpose of removing dirt is not achieved.
Disclosure of Invention
Objects of the present invention include, for example, providing a wafer cleaning method and apparatus which can improve the cleaning efficiency of a wafer and improve the cleanliness of the wafer.
Embodiments of the invention may be implemented as follows:
in a first aspect, the present invention provides a wafer cleaning method, comprising the steps of:
a pre-cleaning step of placing the wafer fixed to the first carrier via the adhesive layer in a first cleaning tank, and cleaning the wafer by spraying a first cleaning solution at a temperature of T1;
a degumming and cleaning process, wherein in the degumming and cleaning process, the wafer and the first carrier are placed in a second cleaning tank, and the bonding layer is at least immersed in first cleaning liquid with the temperature of T2 in the second cleaning tank and is used for softening the bonding layer and separating the wafer from the bonding layer;
a chemical cleaning step of placing the wafer in a third cleaning tank, and immersing the wafer in a second cleaning solution having a temperature of T2 in the third cleaning tank, the second cleaning solution including an alkaline cleaning agent;
and a pure water cleaning step of transferring the wafer to a fourth cleaning tank in which the wafer is immersed with a first cleaning liquid having a temperature of T2;
the softening temperature of the tie layer is T0, and T2 > T0 > T1.
In an optional embodiment, after the pre-cleaning process and before the degumming cleaning process, a soaking cleaning process is further included; in the soaking and cleaning process, the wafer and the first carrier are transferred from the first cleaning tank to the fifth cleaning tank, and the wafer is immersed in pure water in the fifth cleaning tank, so that the wafer is thrown in the fifth cleaning tank; in the immersion cleaning step, the temperature of the pure water in the fifth cleaning tank is T1.
In an alternative embodiment, the steps of the wafer cleaning method further comprise:
after the degumming and cleaning process and before the chemical cleaning process, the wafer which is separated from the bonding layer is inserted into the second carrier.
In an alternative embodiment, the steps of the wafer cleaning method further comprise:
after the chemical cleaning step and before the pure water cleaning step, the wafer in the wafer cassette is transferred to a third carrier, and the third carrier is oscillated in a third cleaning tank to perform ultrasonic cleaning.
In an alternative embodiment, the steps of the wafer cleaning method further comprise:
after the pure water cleaning step, the wafer is transferred from the fourth cleaning tank to the drying tank, and the wafer is dried.
In an alternative embodiment, the first cleaning solution is pure water or deionized water.
In alternative embodiments, T1 is 45 ± 2 ℃; t2 was 90. + -. 2 ℃.
In an optional embodiment, the second cleaning tank includes a limiting member, and in the step of degumming and cleaning, when the wafer and the first carrier are placed in the second cleaning tank, the limiting member is abutted against the wafer, and the limiting member is used for limiting the wafer.
In a second aspect, the present invention provides a wafer cleaning apparatus for performing the above wafer cleaning method, which includes a first cleaning tank, a second cleaning tank, a third cleaning tank, a fourth cleaning tank, a fifth cleaning tank, a drying tank and a robot arm; heating units are arranged in the first cleaning tank, the fifth cleaning tank, the second cleaning tank, the third cleaning tank and the fourth cleaning tank, and an ultrasonic generator is arranged in the third cleaning tank;
the mechanical arm is used for transferring the wafer between any two of the first cleaning tank, the second cleaning tank, the third cleaning tank, the fourth cleaning tank, the fifth cleaning tank and the drying tank.
In an optional embodiment, swing mechanisms are arranged in the fifth cleaning tank, the third cleaning tank and the fourth cleaning tank, and the swing mechanisms are used for driving the wafer to swing in the tanks;
the embodiment of the invention has the beneficial effects that:
the wafer cleaning method comprises the following steps: a pre-cleaning step of placing the wafer fixed to the first carrier via the adhesive layer in a first cleaning tank and cleaning the wafer by spraying a first cleaning solution at a temperature of T1; a degumming and cleaning process, wherein in the degumming and cleaning process, the wafer and the first carrier are placed in a second cleaning tank, and at least the bonding layer is immersed in the second cleaning tank by adopting first cleaning liquid with the temperature of T2, so that the bonding layer is softened and the wafer is separated from the bonding layer; a chemical cleaning step of placing the wafer in a third cleaning tank, and immersing the wafer in a second cleaning solution at a temperature of T2 in the third cleaning tank, the second cleaning solution including an alkaline cleaning agent; and a pure water cleaning step of transferring the wafer cassette to a fourth cleaning tank in which the wafer is immersed with a first cleaning liquid having a temperature of T2; the softening temperature of the bonding layer is T0, and T2 > T0 > T1.
Through the steps, impurities such as dirt, particles and organic matters on the surface of the wafer can be removed more efficiently, so that a stable high-quality wafer is obtained, the quality risk of wafer degumming is reduced, and the production efficiency is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a diagram illustrating steps in a wafer cleaning method according to an embodiment of the present invention;
FIG. 2 is a schematic view of a wafer cleaning apparatus according to an embodiment of the present invention.
An icon: 100-a wafer; 200-a wafer cleaning device; 210-a first cleaning tank; 220-a fifth cleaning tank; 230-a second cleaning tank; 240-third wash tank; 250-a fourth wash tank; 260-drying groove; 270-a robotic arm.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. indicate an orientation or a positional relationship based on that shown in the drawings or that the product of the present invention is used as it is, this is only for convenience of description and simplification of the description, and it does not indicate or imply that the device or the element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention.
Furthermore, the appearances of the terms "first," "second," and the like, if any, are only used to distinguish one description from another and are not to be construed as indicating or implying relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
Referring to fig. 1 and 2, fig. 1 illustrates steps of a wafer cleaning method according to an embodiment of the invention, and fig. 2 illustrates a structure of a wafer cleaning apparatus according to an embodiment of the invention; the embodiment provides a wafer cleaning method, which comprises the following steps:
s1: a pre-cleaning step of placing the wafer 100 fixed to the first carrier via the adhesive layer in the first cleaning tank 210, and cleaning the wafer 100 by spraying a first cleaning solution at a temperature of T1;
s2: a degumming cleaning process, in which the wafer 100 and the first carrier are placed in a second cleaning tank 230, and the bonding layer is at least immersed in the second cleaning tank 230 by using a first cleaning solution with the temperature of T2, so as to soften the bonding layer and separate the wafer 100 from the bonding layer;
s3: a chemical cleaning step of placing the wafer 100 in a third cleaning tank 240, and immersing the wafer 100 in the third cleaning tank 240 with a second cleaning liquid having a temperature of T2, the second cleaning liquid including an alkaline cleaning agent;
s4: and a pure water cleaning step of transferring the wafer 100 to the fourth cleaning tank 250 and immersing the wafer 100 in the fourth cleaning tank 250 using the first cleaning liquid having a temperature T2;
wherein the softening temperature of the bonding layer is T0, and T2 is more than T0 is more than T1.
It should be noted that, in the present embodiment, the adhesive layer is an AB glue as an example, but in other embodiments of the present invention, the adhesive layer may be other types of materials.
In this embodiment, the steps of the wafer cleaning method further include:
after the pre-cleaning process and before the degumming cleaning process, the method also comprises a soaking cleaning process; in the immersion cleaning process, the wafer 100 and the first carrier are transferred from the first cleaning tank 210 to the fifth cleaning tank 220, and the wafer 100 is immersed in pure water in the fifth cleaning tank 220, so that the wafer 100 is thrown in the fifth cleaning tank 220. In the immersion cleaning step, the temperature of the pure water in the fifth cleaning tank 220 is T1.
Wherein the temperature of the pure water in the fifth cleaning bath 220 is 45 + -2 deg., and the cleaning time of the wafer 100 in the fifth cleaning bath 220 is 10 + -2 minutes.
The steps of the wafer cleaning method further include:
after the chemical cleaning process, the wafer 100 in the cassette is transferred to the third carrier before the pure water cleaning process, and the third carrier is oscillated in the third cleaning bath 240 to perform the ultrasonic cleaning.
The steps of the wafer cleaning method further include:
after the pure water cleaning process, the wafer 100 is transferred from the fourth cleaning tank 250 to the drying tank 260, and the wafer 100 is dried.
In the embodiment, since the wafer 100 is entirely inclined when the bonding layer is softened at a high temperature during the degumming process of the wafer 100, and the wafer 100 is prone to corner collapse after being entirely inclined, the second cleaning tank 230 includes a limiting member, and when the wafer 100 and the first carrier are placed in the second cleaning tank 230 during the degumming cleaning process, the limiting member is abutted against the wafer 100 and is used for limiting the wafer 100, so that the phenomenon that the wafer 100 is inclined and has corner collapse due to softening of the bonding layer can be avoided. The working principle of the wafer cleaning method is as follows:
referring to fig. 1 and 2, the wafer 100 and the first carrier are placed in the first cleaning tank 210, and the first carrier is immersed in the first cleaning tank 210, and the wafer 100 is sprayed and cleaned by the first cleaning solution with a temperature of T1; the purpose is that the first cleaning liquid with the temperature of T1 is sprayed to clean the dirt such as mortar on the surface of the wafer 100, and the dirt particles in the gaps between the wafers 100 are washed to flow to the bottom drain pipe of the first cleaning tank 210 and then to the special sewer to flow to the sewage treatment station;
transferring the wafer 100 and the first carrier from the first cleaning tank 210 into the fifth cleaning tank 220 with the wafer 100 being immersed in pure water in the fifth cleaning tank 220 so that the wafer 100 is thrown in the fifth cleaning tank 220; the method aims to clean away residual mortar dirt and metal particles on the surface of the wafer 100 again to achieve the condition of the inserted sheet after degumming and prevent a wafer 100 wafer box from being stained and metal from being adhered to the wafer box;
transferring the wafer 100 and the first carrier from the fifth cleaning tank 220 to the second cleaning tank 230, and immersing the bonding layer between the wafer 100 and the first carrier in the first cleaning solution with a temperature T2 in the second cleaning tank 230; inserting the wafer 100 into the cassette after the wafer 100 is detached from the adhesive layer; the purpose is to soften the adhesive layer so that the wafer 100 can be detached from the adhesive layer, thereby enabling the wafer 100 to be inserted into the wafer box by hand;
transferring the wafer cassette with the wafer 100 inserted therein to a third cleaning bath 240, immersing the wafer 100 in the third cleaning bath 240 with a second cleaning solution having a temperature of T2; transferring the wafer 100 in the cassette into a third carrier, so that the third carrier swings in a third cleaning bath 240, and performing ultrasonic cleaning; the purpose is to remove all impurities, mortar residues and metal particles from the surface of the wafer 100; note that the second cleaning liquid in the third cleaning tank 240 is an alkaline cleaning liquid;
transferring the wafer 100 and the wafer cassette into a fourth cleaning tank 250, immersing the wafer 100 in the fourth cleaning tank 250 by using a first cleaning solution with the temperature of T2, and enabling the wafer 100 and the wafer cassette to swing; the purpose is to remove the chemical liquid, the dirt and the metal particles remained on the surface of the wafer 100 after the wafer 100 is cleaned by the third cleaning tank 240;
the wafer 100 is transferred from the fourth cleaning tank 250 to the drying tank 260, and the wafer 100 is dried.
It should be noted that pure water can also be used as the cleaning solution in the first cleaning tank 210, the fifth cleaning tank 220, the second cleaning tank 230, the third cleaning tank 240, and the fourth cleaning tank 250.
Through the steps, the wafer 100 can be subjected to pre-cleaning, soaking cleaning, ultrasonic cleaning, pure water cleaning and drying, so that impurities such as dirt, particles, organic matters and the like on the surface of the wafer 100 can be more effectively removed, the stable and high-quality wafer 100 is obtained, the quality risk of the wafer 100 during degumming is reduced, and the production efficiency is improved. Besides, it should be noted that, by providing the first cleaning tank 210, the fifth cleaning tank 220, the second cleaning tank 230 and the third cleaning tank 240, the dirty substances and metal particles on the surface of the wafer 100 can be effectively removed; and it is possible to prevent the pure water in the fourth cleaning tank 250 from being contaminated, so that it is possible to improve the utilization rate of the cleaning liquid in each tank and reduce the replacement frequency of the cleaning liquid in each tank, and it is possible to reduce the cleaning cost.
Further, in this embodiment, the first cleaning solution is pure water or deionized water; the first cleaning tank 210, the fifth cleaning tank 220, the second cleaning tank 230, the third cleaning tank 240 and the fourth cleaning tank 250 need to adjust the temperature of the cleaning liquid in the process of cleaning the wafer 100, specifically, T1 is 45 ± 2 ℃; t2 is 90 +/-2 ℃; that is, the pure water temperature of the first cleaning tank 210 is 45 ± 2 °; the temperature of the pure water in the second cleaning tank 230 is 90 ± 2 °; the temperature of the pure water in the third washing tank 240 is 90 ± 2 °; the temperature of pure water in the fourth cleaning tank 250 is 90 + -2 deg., and the temperature of pure water in the fifth cleaning tank 220 is 45 + -2 deg..
The cleaning time period of the wafer 100 in the fifth cleaning bath 220 is 10 ± 2 minutes.
Further, in the present embodiment, in order to improve the cleaning effect, the cleaning time of the first cleaning tank 210, the fifth cleaning tank 220, the second cleaning tank 230, the third cleaning tank 240 and the fourth cleaning tank 250 needs to be adjusted in the process of cleaning the wafer 100, specifically, the time of performing the spray cleaning in the first cleaning tank 210 is 13 ± 2 minutes; the cleaning time of the wafer 100 in the fifth cleaning bath 220 is 10 ± 2 minutes; in the second cleaning bath 230, when the temperature in the second cleaning bath 230 is 90 degrees, the time period during which the bonding layer between the wafer 100 and the first carrier is immersed by the pure water in the second cleaning bath 230 is 20 minutes; the duration of the ultrasonic cleaning of the third carrier in the third cleaning tank 240 is 22 ± 2 minutes; the cleaning time period of the wafer 100 in the fourth cleaning tank 250 is 10 ± 2 minutes.
In summary, referring to fig. 1 and fig. 2, based on the above, taking silicon carbide cleaning as an example, the wafer cleaning method comprises the following steps:
placing the silicon carbide wafer 100 and a first carrier in a first cleaning tank 210, soaking the first carrier in the first cleaning tank 210, and spraying and cleaning the silicon carbide wafer 100 for 13 minutes by adopting a first cleaning solution with the temperature of T1; therefore, the first cleaning liquid is sprayed to clean dirt such as mortar on the surface of the silicon carbide wafer 100, and dirt particles in gaps among the silicon carbide wafers 100 are washed to flow to a drain pipe at the bottom of the first cleaning tank 210 and then are discharged to a special sewer to flow to a sewage treatment station;
transferring the silicon carbide wafer 100 and the first carrier from the first cleaning tank 210 into the fifth cleaning tank 220, and immersing the silicon carbide wafer 100 in 45 ° pure water in the fifth cleaning tank 220, so that the silicon carbide wafer 100 is thrown in the fifth cleaning tank 220, and bubbles are generated inside the fifth cleaning tank 220, and cleaning is performed for 10 minutes with the silicon carbide wafer 100 oscillating and with the bubbles present; the aim is to clean the residual mortar dirt and metal particles on the surface of the silicon carbide wafer 100 again to achieve the condition of the insert after degumming and prevent the silicon carbide wafer 100 wafer box from being stained and the metal from adhering to the wafer box; it is possible to prevent the pure water of the third and fourth wash tanks 240 and 250 from being contaminated;
transferring the silicon carbide wafer 100 and the first carrier from the fifth cleaning bath 220 to the second cleaning bath 230, and immersing the bonding layer between the silicon carbide wafer 100 and the first carrier in the first cleaning solution with a temperature of T2 of 90 ° in the second cleaning bath 230; softening the bonding layer for 20 minutes under the action of the high temperature of the first cleaning liquid at 90 degrees so as to separate the silicon carbide wafer 100 from the bonding layer; after the silicon carbide wafer 100 is detached from the adhesive layer, the silicon carbide wafer 100 is inserted into a cassette; the purpose is to soften the adhesive layer so that the silicon carbide wafer 100 can be separated from the adhesive layer, and when the silicon carbide wafer 100 can be adhered, the silicon carbide wafer 100 is inserted into the wafer box by hand;
transferring the wafer cassette inserted with the silicon carbide wafer 100 into a third cleaning tank 240, wherein the temperature of the second cleaning liquid in the third cleaning tank 240 is 90 ℃, transferring the silicon carbide wafer 100 in the wafer cassette into a third carrier, so that the third carrier swings up and down in the third cleaning tank 240 and bubbles are generated in the third cleaning tank 240, and performing ultrasonic cleaning for 22 minutes under the condition that the silicon carbide wafer 100 swings and bubbles exist; the purpose is to remove all impurities, mortar residues and metal particles from the surface of the silicon carbide wafer 100; note that the second cleaning liquid in the third cleaning tank 240 is an alkaline cleaning liquid;
transferring the silicon carbide wafer 100 and the wafer box into a fourth cleaning tank 250, wherein the temperature of the first cleaning liquid in the fourth cleaning tank 250 is 90 degrees, the silicon carbide wafer 100 and the wafer box swing in the first cleaning liquid, air bubbles are generated in the fourth cleaning tank 250, and the silicon carbide wafer 100 is cleaned for 15 minutes under the condition that the air bubbles exist and swing; the purpose is to remove the liquid medicine, the dirt substances and the metal particles which are remained on the surface of the silicon carbide wafer 100 after the silicon carbide wafer 100 is cleaned by the third cleaning tank 240;
the silicon carbide wafer 100 is transferred from the fourth cleaning bath 250 to the drying bath 260, and the silicon carbide wafer 100 is dried.
In the process of performing the above method, the robot arm 270 may be used to transfer the wafer 100, the first carrier, and the cassette.
Based on the above, referring to fig. 1 and fig. 2, the present invention provides a wafer cleaning apparatus 200 for implementing the above wafer cleaning method, wherein the wafer cleaning apparatus 200 includes a first cleaning tank 210, a second cleaning tank 230, a third cleaning tank 240, a fourth cleaning tank 250, a fifth cleaning tank 220, a drying tank 260 and a robot arm 270; heating units are arranged in the first cleaning tank 210, the second cleaning tank 230, the third cleaning tank 240, the fourth cleaning tank 250 and the fifth cleaning tank 220, and an ultrasonic generator is arranged in the third cleaning tank 240;
the robot arm 270 serves to transfer the wafer 100 between any two of the first cleaning bath 210, the fifth cleaning bath 220, the second cleaning bath 230, the third cleaning bath 240, the fourth cleaning bath 250, and the drying bath 260.
Further, in the present embodiment, in order to drive the wafer 100 to swing in the fifth cleaning tank 220, the third cleaning tank 240 and the fourth cleaning tank 250 to improve the cleaning effect, swing mechanisms are disposed in the fifth cleaning tank 220, the third cleaning tank 240 and the fourth cleaning tank 250, and the swing mechanisms are used for driving the wafer 100 to swing in the tank.
In addition, in order to improve the cleaning effect by generating bubbles in the fifth cleaning tank 220, the third cleaning tank 240, and the fourth cleaning tank 250, bubblers for generating bubbles in the tank are provided in the fifth cleaning tank 220, the third cleaning tank 240, and the fourth cleaning tank 250.
In summary, referring to fig. 1 and 2, taking the cleaning of the sic wafer 100 as an example, the wafer cleaning apparatus 200 works as follows:
the silicon carbide wafer 100 and the first carrier are placed in the first cleaning tank 210 by the robot arm 270, and the pure water in the first cleaning tank 210 is heated to 45 ° by the heating unit in the first cleaning tank 210 while the silicon carbide wafer 100 is subjected to spray cleaning with the pure water for 13 minutes;
the silicon carbide wafer 100 and the first carrier are transferred from the first cleaning tank 210 into the fifth cleaning tank 220 by the robot arm 270, and the pure water in the fifth cleaning tank 220 is heated to 45 ° by the heating unit in the fifth cleaning tank 220, and the silicon carbide wafer 100 is immersed in the pure water of 45 ° in the fifth cleaning tank 220; meanwhile, the silicon carbide wafer 100 is driven by a swing mechanism to swing up and down in the fifth cleaning tank 220, bubbles are generated in the fifth cleaning tank 220 by a bubbler, and the silicon carbide wafer 100 is cleaned for 10 minutes under the condition of swinging and existence of the bubbles; the aim is to wash away the residual mortar dirt and metal particles on the surface of the silicon carbide wafer 100 again to achieve the condition of the inserted sheet after degumming and prevent the silicon carbide wafer 100 and the wafer box from being stained and metal from adhering to the wafer box; it is possible to prevent the pure water of the third and fourth wash tanks 240 and 250 from being contaminated;
the silicon carbide wafer 100 and the first carrier are transferred from the fifth cleaning tank 220 into the second cleaning tank 230 by the robot 270, and the pure water in the second cleaning tank 230 is heated to 90 ° by the heating unit in the second cleaning tank 230, and the bonding layer between the silicon carbide wafer 100 and the first carrier is immersed by the 90 ° pure water in the second cleaning tank 230; under the high-temperature action of 90-degree pure water, the bonding layer is softened for 20 minutes to separate the silicon carbide wafer 100 from the bonding layer; after the silicon carbide wafer 100 is detached from the adhesive layer, the silicon carbide wafer 100 is inserted into a cassette; the purpose is to soften the adhesive layer so that the silicon carbide wafer 100 can be separated from the adhesive layer, and when the silicon carbide wafer 100 can be adhered, the silicon carbide wafer 100 is inserted into the wafer box by hand;
transferring the wafer box inserted with the silicon carbide wafer 100 into a third cleaning tank 240 through a mechanical arm 270, heating pure water in the third cleaning tank 240 to 90 degrees through a heating unit in the third cleaning tank 240, transferring the silicon carbide wafer 100 in the wafer box into a third carrier, simultaneously driving the silicon carbide wafer 100 and the third carrier to swing up and down in the third cleaning tank 240 through a swing mechanism, generating bubbles in the third cleaning tank 240 through a bubbler, and performing ultrasonic cleaning for 22 minutes under the condition that the silicon carbide wafer 100 swings and the bubbles exist; the purpose is to remove all impurities, mortar residues and metal particles on the surface of the silicon carbide wafer 100; it should be noted that, an alkaline cleaning agent is added into the third cleaning tank 240;
transferring the silicon carbide wafer 100 and the wafer cassette into the fourth wash tank 250 by the robot arm 270, and heating the pure water in the fourth wash tank 250 to 90 ° by the heating unit in the fourth wash tank 250; meanwhile, the silicon carbide wafer 100 and the wafer box are driven by the swing mechanism to swing up and down in the fourth cleaning tank 250, bubbles are generated in the fourth cleaning tank 250 by the bubbler, and the silicon carbide wafer 100 is cleaned for 15 minutes under the conditions of swing and existence of the bubbles; the purpose is to remove the liquid medicine, the dirt substances and the metal particles which are remained on the surface of the silicon carbide wafer 100 after the silicon carbide wafer 100 is cleaned by the third cleaning tank 240;
the silicon carbide wafer 100 is transferred from the fourth cleaning bath 250 to the drying bath 260, and the silicon carbide wafer 100 is dried by the heating unit in the drying bath 260.
Through the steps, the silicon carbide wafer 100 can be subjected to pre-cleaning, soaking cleaning, ultrasonic cleaning, pure water cleaning and drying, so that impurities such as dirt, particles and organic matters on the surface of the silicon carbide wafer 100 can be effectively removed, the stable high-quality silicon carbide wafer 100 is obtained, the quality risk of degumming of the silicon carbide wafer 100 is reduced, and the production efficiency is improved.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are also within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A method for cleaning a wafer, the method comprising the steps of:
a pre-cleaning step of placing a wafer fixed to a first carrier via an adhesive layer in a first cleaning tank, and cleaning the wafer by spraying a first cleaning solution at a temperature of T1;
a degumming and cleaning process, wherein the wafer and the first carrier are placed in a second cleaning tank, and at least the bonding layer is immersed in the second cleaning tank by adopting a first cleaning solution with the temperature of T2 so as to soften the bonding layer and separate the wafer from the bonding layer;
a chemical solution cleaning step of placing the wafer in a third cleaning tank, in which the wafer is immersed with a second cleaning solution having a temperature of T2, the second cleaning solution including an alkaline cleaning agent;
and a pure water cleaning step of transferring the wafer to a fourth cleaning tank in which the wafer is immersed with a first cleaning liquid having a temperature of T2;
the softening temperature of the bonding layer is T0, and T2 > T0 > T1.
2. A method for cleaning a wafer as recited in claim 1, wherein:
after the pre-cleaning procedure and before the degumming cleaning procedure, a soaking cleaning procedure is also included; in the soaking and cleaning process, the wafer and the first carrier are transferred from the first cleaning tank to a fifth cleaning tank, and the wafer is immersed in pure water in the fifth cleaning tank, so that the wafer is thrown in the fifth cleaning tank;
in the immersion cleaning step, the temperature of the pure water in the fifth cleaning tank is T1.
3. A method for cleaning a wafer as recited in claim 1, wherein:
the steps of the wafer cleaning method further include:
after the degumming and cleaning process and before the chemical cleaning process, the wafer which is separated from the bonding layer is inserted into a second carrier.
4. A method for cleaning a wafer as recited in claim 1, wherein:
the steps of the wafer cleaning method further include:
and after the chemical cleaning step and before the pure water cleaning step, transferring the wafer in the wafer cassette into a third carrier, so that the third carrier swings in the third cleaning tank, and performing ultrasonic cleaning.
5. A method for cleaning a wafer as recited in claim 1, wherein:
the steps of the wafer cleaning method further include:
after the pure water cleaning step, the wafer is transferred from the fourth cleaning tank into a drying tank, and the wafer is dried.
6. A method for cleaning a wafer as recited in any one of claims 1-5, wherein:
the first cleaning liquid is pure water or deionized water.
7. A method for cleaning a wafer according to any one of claims 1 to 5, wherein:
the T1 is 45 +/-2 ℃; the T2 is 90. + -. 2 ℃.
8. A method for cleaning a wafer as recited in any one of claims 1-5, wherein:
the second cleaning tank comprises a limiting piece, in the degumming cleaning process, when the wafer and the first carrier are placed in the second cleaning tank, the limiting piece is abutted to the wafer, and the limiting piece is used for limiting the wafer.
9. A wafer cleaning apparatus for carrying out the wafer cleaning method according to any one of claims 1 to 8, characterized in that:
the wafer cleaning device comprises a first cleaning tank, a second cleaning tank, a third cleaning tank, a fourth cleaning tank, a fifth cleaning tank, a drying tank and a mechanical arm; heating units are arranged in the first cleaning tank, the fifth cleaning tank, the second cleaning tank, the third cleaning tank and the fourth cleaning tank, and an ultrasonic generator is arranged in the third cleaning tank;
the mechanical arm is used for transferring the wafer between any two of the first cleaning tank, the second cleaning tank, the third cleaning tank, the fourth cleaning tank, the fifth cleaning tank and the drying tank.
10. The wafer cleaning apparatus according to claim 9, wherein:
and swing mechanisms are arranged in the fifth cleaning tank, the third cleaning tank and the fourth cleaning tank and are used for driving the wafers to swing in the tanks.
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