CN114695048A - Lower electrode assembly and plasma processing apparatus including the same - Google Patents
Lower electrode assembly and plasma processing apparatus including the same Download PDFInfo
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- CN114695048A CN114695048A CN202011601453.1A CN202011601453A CN114695048A CN 114695048 A CN114695048 A CN 114695048A CN 202011601453 A CN202011601453 A CN 202011601453A CN 114695048 A CN114695048 A CN 114695048A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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Abstract
A lower electrode assembly and a plasma processing apparatus including the same, wherein the lower electrode assembly includes: a base; the electrostatic chuck is positioned on the base and used for adsorbing a substrate to be processed, and the material of the electrostatic chuck is a ceramic non-metallic material; the gas conveying pipeline penetrates through the base and is used for conveying gas; the gas from the gas conveying pipeline enters the gas diffusion cavity through the gas inlet, is diffused by the gas diffusion cavity and then is output to the back of the substrate to be processed through the gas outlet. The plasma processing apparatus can prevent arc discharge.
Description
Technical Field
The present invention relates to the field of semiconductors, and more particularly, to a lower electrode assembly and a plasma processing apparatus including the same.
Background
In various processes of manufacturing semiconductor devices, plasma processing is a key process for processing a substrate to be processed into a designed pattern in a plasma processing apparatus. In a typical plasma processing process, a process gas is excited by Radio Frequency (RF) to form a plasma. The plasmas generate physical bombardment action and chemical reaction with the surface of the substrate to be processed after the plasmas are subjected to the action of an electric field (capacitive coupling or inductive coupling) between the upper electrode and the lower electrode, so that the substrate to be processed is processed.
In the case of processing a substrate to be processed on an electrostatic chuck by using plasma, a higher temperature of the substrate to be processed and a higher rf power are often required, which easily causes the gas in the gas holes to be broken down to generate an arc (arcing) at high temperature and high power, and a serious arc may cause arc damage to the substrate to be processed and the electrostatic chuck, or even may cause permanent damage to the electrostatic chuck.
Therefore, a plasma processing apparatus is urgently required to reduce arc damage.
Disclosure of Invention
The invention provides a lower electrode assembly and a plasma processing device comprising the same, which are used for preventing arc discharge.
To solve the above technical problem, the present invention provides a lower electrode assembly, including: a base; the electrostatic chuck is positioned on the base and used for adsorbing a substrate to be processed, and the material of the electrostatic chuck is a ceramic non-metallic material; the gas conveying pipeline penetrates through the base and is used for conveying gas; the gas from the gas conveying pipeline enters the gas diffusion cavity through the gas inlet, is diffused by the gas diffusion cavity and then is output to the back of the substrate to be processed through the gas outlet.
Optionally, the electrostatic chuck comprises a plurality of concentric gas zones, each gas zone is provided with the gas diffusion chamber, a gas inlet and a gas outlet, and each gas zone corresponds to one gas delivery pipe.
Optionally, the base includes a platform portion and a step portion located at the periphery of the platform portion; the electrostatic chuck is positioned on the platform portion.
Optionally, the step portion includes at least one edge diffusion region, and the lower electrode assembly further includes: edge air inlet, edge diffusion chamber and edge gas outlet locate in the edge diffusion district, edge air inlet and edge gas outlet are located respectively the below and the top in edge diffusion chamber, edge air inlet and edge gas outlet edge diffusion chamber intercommunication just run through the step portion.
Optionally, the number of the gas diffusion regions is 2 or more.
Optionally, the material of the electrostatic chuck comprises: an insulating material or a semiconductor material; the material of the electrostatic chuck comprises: alumina or aluminum nitride.
Optionally, the gas diffusion cavity is an annular cavity with a gap; further comprising: the electrodes are arranged between the gaps and in the electrostatic chuck inside and outside the annular cavity; and the direct current power supply is electrically connected with the electrode and is used for generating electrostatic attraction to adsorb the substrate to be processed.
Optionally, the gas transported by the gas transportation pipeline is helium.
Optionally, the method further includes: the cooling liquid channel is arranged in the base and used for conveying cooling liquid; and the bonding layer is arranged between the electrostatic chuck and the base.
Optionally, the method further includes: a gas source; the two ends of the gas branch are respectively connected with the pressure controller and the gas source, and the gas branch is communicated with the gas conveying pipeline or the edge gas inlet.
Optionally, the number of the gas branches is equal to the sum of the number of the gas conveying pipelines and the number of the edge gas inlets, and one gas branch is connected with one gas conveying pipeline or one edge gas inlet.
Optionally, the number of the gas branches is less than the sum of the number of the gas conveying pipelines and the number of the edge inlet ports, and one gas branch is shared between a plurality of gas conveying pipelines, or between a plurality of edge inlet ports, or between an edge conveying pipeline and an edge inlet port.
Accordingly, the present invention also provides a plasma processing apparatus comprising: a reaction chamber; the lower electrode assembly is arranged at the bottom in the reaction cavity.
Optionally, the plasma processing apparatus is a capacitively-coupled plasma processing apparatus, further comprising: a mounting substrate positioned on the top of the reaction chamber; the gas spray header is positioned below the mounting substrate and is opposite to the lower electrode assembly; the radio frequency power source is electrically connected with the gas spray header or the base; a bias radio frequency power source electrically connected to the pedestal.
Optionally, the plasma processing apparatus is an inductively coupled plasma processing apparatus, further comprising: the insulating window is positioned at the top of the reaction cavity; the inductance coil is positioned above the insulating window; the radio frequency power source is electrically connected with the inductance coil; a bias radio frequency power source electrically connected to the pedestal.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
in the lower electrode assembly provided by the technical scheme of the invention, the electrostatic chuck is internally provided with a gas diffusion cavity, a gas inlet and a gas outlet, the gas inlet is used for receiving gas transmitted by a gas transmission pipeline in the base below the electrostatic chuck, the gas enters the gas diffusion cavity through the gas inlet, and is discharged to the back of the substrate to be processed through the gas outlet after being diffused in the gas diffusion cavity. Because the electrostatic chuck is made of the ceramic non-metallic material, even if arc discharge occurs in the electrostatic chuck, a large current cannot be generated, so that the electrostatic chuck cannot be permanently damaged due to arc damage.
Furthermore, the electrostatic chuck comprises a plurality of concentric gas areas, a gas diffusion cavity, a gas inlet and a gas outlet are arranged in each gas area, the gas inlet is communicated with the gas conveying pipeline, and the temperature of the surface of the to-be-processed substrate in the area corresponding to the gas inlet can be controlled by adjusting the pressure of the gas entering the gas conveying pipeline, so that the temperature of different areas of the to-be-processed substrate can be adjusted.
Drawings
FIG. 1 is a schematic view of a plasma processing apparatus according to the present invention;
FIG. 2 is a top view of a lower electrode assembly of the plasma processing apparatus of FIG. 1;
FIG. 3 is an enlarged view of a portion of the lower electrode assembly of FIG. 1;
FIG. 4 is a schematic diagram of an air supply system according to the present invention;
FIG. 5 is a schematic view of another gas supply system of the present invention;
fig. 6 is a schematic structural view of another gas supply system according to the present invention.
Detailed Description
As described in the background art, the existing lower electrode assembly is susceptible to arc discharge, and for this reason, the present invention has been made in an effort to provide a lower electrode assembly and a plasma processing apparatus including the lower electrode assembly, which are capable of preventing arc discharge.
The following is a detailed description:
FIG. 1 is a schematic structural diagram of a plasma processing apparatus according to the present invention.
Referring to fig. 1, a plasma processing apparatus 1 includes: a reaction chamber 10; the lower electrode assembly 11 is positioned at the bottom in the reaction chamber 10 and used for bearing a substrate W to be processed; a mounting substrate 12 positioned at the top of the reaction chamber 10; and a gas shower head 13 disposed below the mounting substrate 12 and facing the lower electrode assembly 11.
In this embodiment, the plasma processing apparatus is a capacitively-coupled plasma etching apparatus (CCP), and the plasma processing apparatus further includes: a gas supply device 15 connected to the gas shower head 13, the gas supply device 15 being configured to supply a reaction gas into the gas shower head 13; the radio frequency power source 14 is connected with the gas spray head 13 or the lower electrode assembly 11, the corresponding gas spray head 13 or the lower electrode assembly 11 is grounded, the radio frequency signal generated by the radio frequency power source 14 enables the reaction gas to be converted into plasma through capacitance formed by the gas spray head 13 and the lower electrode assembly 11, the plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, free radicals and the like, and the active particles can perform various physical and chemical reactions with the surface of the substrate to be processed, so that the appearance of the surface of the substrate is changed, and the etching process is completed. Further, the plasma processing apparatus includes: a bias rf power source (not shown) is connected to the lower electrode assembly 11 for controlling the bombardment direction of the charged particles in the plasma.
In other embodiments, the plasma processing apparatus is an inductively coupled plasma etching apparatus (ICP), the plasma processing apparatus further comprising: the gas conveying device is used for conveying reaction gas into the reaction cavity; the radio frequency power source is connected with the inductance coil; the bias radio frequency power source applies bias radio frequency voltage to the lower electrode component through the radio frequency matching network and is used for controlling the bombardment direction of charged particles in the plasma; a vacuum pump is arranged below the reaction cavity and used for discharging reaction byproducts out of the reaction cavity and maintaining the vacuum environment of the reaction cavity; and a gas conveying device is arranged at one end of the side wall of the reaction cavity, which is close to the insulating window, or a gas conveying device can be arranged in the central area of the insulating window, the gas conveying device is used for injecting reaction gas into the reaction cavity, and the radio frequency power of the radio frequency power source drives the inductance coil to generate a strong high-frequency alternating magnetic field, so that the low-pressure reaction gas in the reaction cavity is ionized to generate plasma.
Referring to fig. 1, the lower electrode assembly 11 further includes: an electrode 16 disposed within the electrostatic chuck 119; and a direct current power supply DC electrically connected to the electrode 16 for generating an electrostatic attraction force to attract the substrate W to be processed.
The lower electrode assembly 11 is described in detail below:
FIG. 2 is a top view of the lower electrode assembly 11 of the plasma processing apparatus of FIG. 1; fig. 3 is a partially enlarged view of the lower electrode assembly of fig. 1.
Referring to fig. 2 and 3, the lower electrode assembly 11 includes: a base 117; an electrostatic chuck 119, which is located on the pedestal 117, for adsorbing a substrate W to be processed, and is made of a ceramic non-metallic material; gas delivery conduits (113A and 113B) extending through the base 117 for delivering gas; the gas diffusion chamber 111, the gas inlet 112 and the gas outlet 110 are arranged in the electrostatic chuck 119, and gas from the gas conveying pipelines (113A and 113B) enters the gas diffusion chamber 111 through the gas inlet 112, is diffused by the gas diffusion chamber 111 and then is output to the surface of the substrate W to be processed through the gas outlet 110.
In this embodiment, the gas diffusion chamber 111 is a notched annular chamber; further comprising: electrodes 16 (see fig. 1) are provided between the indentations and within the electrostatic chuck 119 inside and outside the annular cavity.
In the present embodiment, the lower electrode assembly 11 further includes: and a lifting hole 150 (see fig. 2) for accommodating a lifting pin (not shown in the figure), wherein the lifting pin moves up and down in the lifting hole 150 to jack up or put down the substrate W to be processed, so that the substrate W to be processed can be taken and placed. The lower electrode assembly 11 further includes a sealing tape 120 for dividing gas regions to accommodate helium gas in different gas regions.
The material of the electrostatic chuck 119 is a ceramic non-metallic material, and the material of the electrostatic chuck 119 includes: an insulating material or a semiconductor material; the material of the electrostatic chuck comprises: alumina or aluminum nitride. Since the gas diffusion chamber 111 is disposed in the electrostatic chuck 119 and the electrostatic chuck 119 is made of a ceramic non-metallic material, even if arc discharge occurs in the electrostatic chuck, a large current is not generated, so that arc damage is not caused, and the electrostatic chuck is permanently damaged.
In this embodiment, the base 117 includes a platform portion and a step portion located at the periphery of the platform portion, and a process unit (process) is disposed above the step portion; the electrostatic chuck 119 is located on the platform portion, the electrostatic chuck 119 includes a plurality of concentric gas regions a, which are schematically illustrated as 2 gas regions a, and actually, the number of the gas regions a may be other numbers, each gas region a is provided with the gas diffusion chamber 111, the gas inlet 112 and the gas outlet 110, each gas region a corresponds to one gas delivery pipe (113A, 113B), and the gas delivery pipes (113A, 113B) penetrate through the platform portion.
In other embodiments, the base 117 is a plate material without a step.
Because a plurality of gas areas A are concentric, and each gas area A is internally provided with a gas conveying pipeline (113A, 113B) for conveying helium gas into the gas diffusion cavity 111 through the gas inlet 112, the helium gas is diffused in the gas diffusion cavity 111 and then flows out through the gas outlet 110 to reach the back of the substrate W to be processed so as to control the temperature of different areas of the substrate W to be processed. The temperature adjustability among different areas of the substrate W to be processed is better by controlling the pressure of helium in each gas area A, which is favorable for improving the etching consistency of the surface of the substrate W to be processed.
In the present embodiment, the gas conveying pipe 113A is used for conveying helium gas to the gas inlet 112 of the inner ring, and the gas conveying pipe 113B is used for conveying helium gas to the gas inlet 112 of the outer ring.
In this embodiment, the step portion includes at least one edge diffusion region, and the number of the edge diffusion regions is 1 for an example, but actually, the number of the edge diffusion regions is not limited, and may be multiple. The lower electrode assembly further includes: edge air inlet 114, edge diffusion chamber 115 and edge gas outlet 116 locate in the edge diffusion district, edge air inlet 114 and edge gas outlet 116 are located respectively edge diffusion chamber 115's below and top, edge air inlet 114 and edge gas outlet 116 and edge diffusion chamber 115 intercommunication and run through the step portion. Helium gas is fed into the edge diffusion chamber 115 through the edge gas inlet 114 and blown through the edge gas outlet 116 towards the device above the step to control the temperature on the device.
In the present embodiment, the lower electrode assembly 11 further includes: a coolant channel 130 (see fig. 3) within the base 117 for conveying a coolant. The cooling fluid flows in the cooling fluid channel 130, and removes heat from the base 117 during the flowing process, so as to realize temperature control of the base 117.
In addition, a bonding layer 118 is disposed between the electrostatic chuck 119 and the base 117, and the bonding layer 118 is used to improve the bonding force between the electrostatic chuck 119 and the base 117.
The following detailed description of the gas supply system for delivering helium gas to the gas delivery lines (113A, 113B) and the edge gas inlets 114 is provided:
fig. 4 is a schematic structural diagram of an air supply system according to the present invention.
Referring to fig. 4, the gas supply system includes: a gas source 140; and the two ends of the gas branches 145 are respectively connected with a pressure controller (141, 142 and 143) and a gas source 140, and the gas branches 145 are communicated with the gas conveying pipelines (113A, 113B) or the edge gas inlet 114 of the reaction chamber 10.
In this embodiment, the example is schematically illustrated that the number of the gas areas a is 2, and the number of the edge diffusion areas is 1, wherein each gas area a is supplied with helium through one gas supply pipe (113A or 113B), and one edge diffusion area is supplied with helium through one edge gas inlet 114.
In other embodiments, the number of gas zones and edge diffusion zones is other than the same, but the number of gas branches equals the sum of the number of gas delivery conduits and edge gas inlets, one gas branch connecting one gas delivery conduit or edge gas inlet, and no two gas delivery conduits, or two edge gas inlets, or one gas delivery conduit and one edge travel port sharing one gas branch therebetween.
In this embodiment, the number of the gas branches 145 is 3, wherein 2 gas branches 145 are respectively communicated with the gas delivery pipes (113A and 113B), 1 gas branch 145 is communicated with the edge gas inlet 114, and each gas branch 145 is provided with a pressure controller (141, 142, or 143), and the amount of helium gas entering each gas delivery pipe (113A, 113B) or the edge gas inlet 114 is controlled by adjusting the pressure of the pressure controller (141, 142, or 143) on each gas branch 145, so as to control the temperature conditions of different regions of the substrate W to be processed, thereby improving the temperature adjustability of the substrate W to be processed.
Fig. 5 is a schematic view of another gas supply system according to the present invention.
Referring to fig. 5, the gas supply system includes: a gas source 240; and the two ends of the gas branches 245 are respectively connected with a pressure controller (241 or 242) and a gas source 240, and the gas branches 245 are communicated with the gas conveying pipelines (113A, 113B) or the edge gas inlet 114 of the reaction chamber 10.
In this embodiment, still taking 2 gas areas a and 1 edge diffusion area as an example for illustration, the number of the gas branches 245 is 2, one gas branch 245 is connected to one pressure controller (241 or 242), the other end of one pressure controller 241 is connected to a gas delivery pipeline (113A) through an input line 246, the other end of the other pressure controller 242 is also connected to an input line 246, except that the input line 246 is divided into 2 input branches (246a and 246B), one input branch 246B is provided with a control valve 247, and 2 input branches (246a and 246B) are respectively connected to a gas delivery pipeline (113B) and the edge gas inlet 114. By adjusting the pressure of the pressure controller 241, the helium gas pressure in the gas delivery pipes (113A, 113B) communicated with the pressure controller is controlled, so as to control the temperature of the area of the substrate W to be processed corresponding to the helium gas pressure. The pressure of the other pressure controller 242 is adjusted to control the flow of helium gas in the input line 246, and the flow of helium gas into the 2 input branches 246a and 246B is adjusted by adjusting the control valve 247, so as to adjust the flow of helium gas in the gas delivery conduits (113A, 113B) and the edge gas inlet 114, and to control the temperature of the substrate W to be processed corresponding to the helium gas, thereby improving the adjustability of the surface temperature of the substrate W to be processed.
In other embodiments, the number of gas zones is 2, the number of edge diffusion zones is 1, the number of gas branches is 2, one of the gas branches is connected to one of the pressure controllers, the other end of one of the pressure controllers is connected to an edge gas inlet via an input line, and the other end of the other pressure controller is also connected to an input line, except that the input line is divided into 2 input branches, and the 2 input branches are respectively connected to 2 of the gas delivery pipes.
Alternatively, in other embodiments, the number of gas branches is less than the sum of the number of gas delivery conduits and edge access ports, and one gas branch is shared between multiple gas delivery conduits, or between multiple edge access ports, or between an edge delivery conduit and an edge access port.
In this embodiment, since the number of the control valves is smaller than the sum of the number of the gas branches and the number of the edge openings, the design of the gas supply system is simplified, the limited space can be saved, the resources can be utilized more effectively, the occupied space area can be reduced, and the cost can be reduced.
Fig. 6 is a schematic view of another gas supply system according to the present invention.
Referring to fig. 6, the gas supply system includes: a gas source 340; the gas supply device comprises 1 gas branch 345, wherein two ends of the gas branch 345 are respectively connected with a pressure controller 341 and a gas source 340, and the gas branch 345 is communicated with gas conveying pipelines (113A, 113B) or an edge gas inlet 114 of the reaction chamber 10.
In this embodiment, taking the gas area a as 2, the edge diffusion area as 1 for example, the number of the gas branches 345 is 1, one gas branch 345 is connected to one pressure controller 341, the other end of one pressure controller 341 is connected to an input line 346, the input line 346 is divided into three branches (346a, 346B and 346c), the three branches (346a, 346B and 346c) are respectively communicated with the gas transmission pipelines (113A and 113B) and the edge gas inlet 114, and two branches (346B and 346c) are respectively provided with a control valve (347a and 347B). The helium gas pressure blown to different areas of the substrate W to be processed is made adjustable by adjusting the control valves (347a and 347b), respectively, thereby improving the adjustability of the temperature of different areas of the substrate W to be processed.
In this embodiment, because the number of the control valves is only 1, the gas supply system is simpler, the limited space and the more effective resource utilization can be saved, and the reduction of the space and the occupied area and the reduction of the cost are facilitated.
In fact, for the gas supply system, the number of the gas sources 140 is not limited to 1, the number of the gas sources 140 may be plural, and the gas branches 145 may be further branches, which is not limited herein.
Although the present invention is disclosed above, the present invention is not limited thereto. Without departure, by any person skilled in the art. Various changes and modifications can be made within the spirit and scope of the invention, and the scope of the invention should be determined by the appended claims.
Claims (15)
1. A lower electrode assembly for a plasma processing apparatus, comprising:
a base;
the electrostatic chuck is positioned on the base and used for adsorbing a substrate to be processed, and the material of the electrostatic chuck is a ceramic non-metallic material;
the gas conveying pipeline penetrates through the base and is used for conveying gas;
the gas from the gas conveying pipeline enters the gas diffusion cavity through the gas inlet, is diffused by the gas diffusion cavity and then is output to the back of the substrate to be processed through the gas outlet.
2. The bottom electrode assembly of claim 1, wherein the electrostatic chuck comprises a plurality of concentric gas zones, each gas zone having the gas diffusion chamber, a gas inlet, and a gas outlet, one gas delivery conduit for each gas zone.
3. The lower electrode assembly according to claim 2, wherein the base includes a terrace portion and a stepped portion at an outer periphery of the terrace portion; the electrostatic chuck is positioned on the platform portion.
4. The lower electrode assembly of claim 3, wherein the step portion comprises at least one edge diffusion region, the lower electrode assembly further comprising: edge air inlet, edge diffusion chamber and edge gas outlet locate each in the edge diffusion district, edge air inlet and edge gas outlet are located respectively the below and the top in edge diffusion chamber, edge air inlet and edge gas outlet and edge diffusion chamber intercommunication just run through the step portion.
5. The lower electrode assembly according to claim 2, wherein the number of the gas regions is 2 or more.
6. The bottom electrode assembly of claim 1, wherein the material of the electrostatic chuck comprises: an insulating material or a semiconductor material; the material of the electrostatic chuck comprises: alumina or aluminum nitride.
7. The lower electrode assembly of claim 1, wherein the gas diffusion chamber is a notched annular chamber; the lower electrode assembly further includes: the electrodes are arranged between the gaps and in the electrostatic chuck inside and outside the annular cavity; and the direct current power supply is electrically connected with the electrode and is used for generating electrostatic attraction to adsorb the substrate to be processed.
8. The lower electrode assembly of claim 1, wherein the gas delivered by the gas delivery conduit is helium.
9. The lower electrode assembly of claim 1, further comprising: the cooling liquid channel is arranged in the base and used for conveying cooling liquid; and a bonding layer disposed between the electrostatic chuck and the base.
10. The lower electrode assembly of claim 4, further comprising: a gas source; the two ends of the gas branch are respectively connected with the pressure controller and the gas source, and the gas branch is communicated with the gas conveying pipeline or the edge gas inlet.
11. The lower electrode assembly of claim 10, wherein the number of gas branches equals the sum of the number of gas delivery conduits and edge gas inlets, one gas branch connecting one gas delivery conduit or edge gas inlet.
12. The lower electrode assembly of claim 10, wherein the number of gas branches is less than the sum of the number of gas delivery conduits and edge access ports, and wherein a gas branch is shared between a plurality of gas delivery conduits, or between a plurality of edge gas inlets, or between an edge delivery conduit and an edge gas inlet.
13. A plasma processing apparatus, comprising:
a reaction chamber;
the lower electrode assembly of any one of claims 1 to 12, disposed at a bottom portion within the reaction chamber.
14. The plasma processing apparatus as claimed in claim 13, wherein the plasma processing apparatus is a capacitively-coupled plasma processing apparatus, further comprising: a mounting substrate positioned on the top of the reaction chamber; the gas spray header is positioned below the mounting substrate and is opposite to the lower electrode assembly; the radio frequency power source is electrically connected with the gas spray header or the base; a bias radio frequency power source electrically connected to the pedestal.
15. The plasma processing apparatus as claimed in claim 13, wherein the plasma processing apparatus is an inductively coupled plasma processing apparatus, further comprising: the insulating window is positioned at the top of the reaction cavity; the inductance coil is positioned above the insulating window; the radio frequency power source is electrically connected with the inductance coil; a bias radio frequency power source electrically connected to the pedestal.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011601453.1A CN114695048A (en) | 2020-12-30 | 2020-12-30 | Lower electrode assembly and plasma processing apparatus including the same |
| TW110140194A TWI827991B (en) | 2020-12-30 | 2021-10-29 | Lower electrode element and plasma processing apparatus including lower electrode element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011601453.1A CN114695048A (en) | 2020-12-30 | 2020-12-30 | Lower electrode assembly and plasma processing apparatus including the same |
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| CN114695048A true CN114695048A (en) | 2022-07-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202011601453.1A Pending CN114695048A (en) | 2020-12-30 | 2020-12-30 | Lower electrode assembly and plasma processing apparatus including the same |
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| CN (1) | CN114695048A (en) |
| TW (1) | TWI827991B (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7674393B2 (en) * | 2005-03-25 | 2010-03-09 | Tokyo Electron Limited | Etching method and apparatus |
| KR101876501B1 (en) * | 2013-08-05 | 2018-07-10 | 어플라이드 머티어리얼스, 인코포레이티드 | In-situ removable electrostatic chuck |
| JP6869034B2 (en) * | 2017-01-17 | 2021-05-12 | 東京エレクトロン株式会社 | Plasma processing equipment |
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2020
- 2020-12-30 CN CN202011601453.1A patent/CN114695048A/en active Pending
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- 2021-10-29 TW TW110140194A patent/TWI827991B/en active
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| TWI827991B (en) | 2024-01-01 |
| TW202240645A (en) | 2022-10-16 |
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