CN114678449B - Diffusion process for reducing doping concentration of N + region of solar cell - Google Patents
Diffusion process for reducing doping concentration of N + region of solar cell Download PDFInfo
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- CN114678449B CN114678449B CN202210585993.8A CN202210585993A CN114678449B CN 114678449 B CN114678449 B CN 114678449B CN 202210585993 A CN202210585993 A CN 202210585993A CN 114678449 B CN114678449 B CN 114678449B
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- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 9
- 238000001514 detection method Methods 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 19
- 238000009417 prefabrication Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- CLOMYZFHNHFSIQ-UHFFFAOYSA-N clonixin Chemical compound CC1=C(Cl)C=CC=C1NC1=NC=CC=C1C(O)=O CLOMYZFHNHFSIQ-UHFFFAOYSA-N 0.000 claims description 8
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- 230000009467 reduction Effects 0.000 abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
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- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
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- 238000006467 substitution reaction Methods 0.000 description 2
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of solar cells, in particular to a diffusion process for reducing the doping concentration of an N + region of a solar cell, which comprises the following steps: step S1, a worker prepares the solar cell in advance and puts the cleaned and textured crystalline silicon wafer into a furnace cavity in the process of preparation in advance; step S2, the central control module controls the concentration sensor to detect the doping concentration of the N + region when the solar cell is prefabricated and prepared, preliminarily judges whether the diffusion process is qualified or not, and adjusts the temperature rise speed in the diffusion process to a corresponding value according to a preset concentration difference value; step S3, when the central control module completes the adjustment of the doping concentration, the central control module determines whether the diffusion is uniform according to the comparison result between the actual sheet resistance and the preset resistance and further determines the diffusion uniformity according to the difference between the sheet resistance and the preset resistance. The invention realizes the reduction of the doping concentration in the diffusion process and the accurate control of the diffusion uniformity.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a diffusion process for reducing the doping concentration of an N + region of a solar cell.
Background
In the preparation process of the solar cell, the silicon wafer needs to be subjected to the processes of texturing, diffusion, etching, film coating, printing and the like in sequence. The diffusion process is that the silicon chip is put into a diffusion furnace by taking a quartz boat as a carrier, and nitrogen and doping elements are introduced into the diffusion furnace at a certain temperature so as to diffuse and deposit PN junctions on the surface of the silicon chip. The doping elements are different according to the types of silicon wafers. When the silicon wafer is a P-type silicon wafer, the introduced doping element is phosphorus, and a phosphorus source reacts with the P-type silicon wafer to obtain phosphorus atoms; when the silicon wafer is an N-type silicon wafer, the introduced doping element is boron, and the boron source reacts with the N-type silicon wafer to obtain boron atoms. The prior art has more problems for the diffusion process for reducing the doping concentration.
Chinese patent publication No.: CN103618019A discloses a crystalline silicon solar cell diffusion method, which comprises the steps of using hydrofluoric acid or nitric acid to clean oil stains on the surface of a silicon wafer and make a texture, placing the silicon wafer after cleaning and making the texture in a vertical diffusion furnace for diffusion, wherein the diffusion process comprises the following steps: (1) charging into a furnace: putting a quartz boat with the crystal silicon wafer into a furnace at a constant speed; (2) vacuumizing: the pressure in the furnace cavity after vacuum pumping is 300 +/-50 mTorr; (3) and (3) vacuum leak detection: detecting the leakage rate of the furnace chamber; (4) and (3) oxidation: oxidizing at low pressure; (5) first-time phosphorus source diffusion: performing primary phosphorus source diffusion at low pressure; (6) heating; (7) and (3) second-time phosphorus source diffusion: performing secondary phosphorus source diffusion at low pressure; (8) propelling phosphorus impurities: carrying out phosphorus impurity propulsion at low pressure; (9) cooling; (10) and (4) discharging. Therefore, the diffusion method of the crystalline silicon solar cell has the following problems: the reduction of the doping concentration and the precise control of the diffusion uniformity in the diffusion process are insufficient.
Disclosure of Invention
Therefore, the invention provides a diffusion process for reducing the doping concentration of an N + region of a solar cell, which is used for overcoming the problems of the prior art that the doping concentration in the diffusion process is reduced and the diffusion uniformity is not accurately controlled.
In order to achieve the above object, the present invention provides a diffusion process for reducing the doping concentration of an N + region of a solar cell, comprising: step S1, a worker prepares the solar cell in advance, puts the cleaned and textured crystalline silicon slice into a furnace cavity in the process of preparation in advance, and introduces nitrogen into the furnace cavity in the process of putting in the crystalline silicon slice;
step S2, the central control module controls the concentration sensor to detect the doping concentration of the N + region when the solar cell prefabrication is completed and preliminarily determines whether the diffusion process in the prefabrication process is qualified or not according to the detected actual doping concentration, when the preliminary determination is completed, the central control module adjusts the temperature rise speed in the diffusion process to a corresponding value according to the comparison result of the difference value between the detected concentration and the preset concentration difference value, and when the central control module completes the adjustment of the temperature rise speed, the central control module determines that the internal and external pressure difference value is abnormal or equipment failure occurs in the preprocessing process according to the preset maximum diffusion concentration difference value; step S3, when the central control module finishes adjusting the doping concentration, the central control module controls the resistance sensor to detect the square resistance of the N + region and judges whether the diffusion is uniform or not according to the comparison result of the actual square resistance and the preset resistance, and when the judgment of the diffusion uniformity is finished, the central control module further judges the diffusion uniformity according to the difference value of the square resistance and the preset resistance.
Further, in the step 2, the central control module controls the concentration sensor to detect the diffusion concentration in the pre-preparation process and preliminarily determines whether the concentration of the diffusion process is qualified according to the detected concentration, the central control module is provided with a preset first diffusion concentration Q1 and a preset second diffusion concentration Q2, wherein Q1 is less than Q2,
if Q is less than or equal to Q1, the central control module judges that the actual detection concentration Q is lower than a preset standard, controls the resistance sensor to detect the resistance value at the moment and judges the uniformity of the concentration lower than the preset value;
if Q1 is more than Q and less than or equal to Q2, the central control module judges that the actual detection concentration is in an allowable range and controls the resistance sensor to detect the resistance value at the moment;
if Q is more than Q2, the central control module judges that the actual detection concentration does not accord with the preset standard value, calculates the diffusion concentration difference value and adjusts the internal and external pressure values to corresponding values according to the comparison result of the actual difference value and the preset difference value.
Further, when the central control module finishes the determination of whether the diffusion concentration is qualified or not and Q is not more than Q1 or Q1 is more than Q1 and not more than Q2, the central control module determines the diffusion uniformity at the present stage according to the resistance C detected by the resistance sensor, the central control module is provided with a preset first resistance C1 and a preset second resistance C2, wherein C1 is more than C2,
if C is less than or equal to C1, the central control module judges that the actual resistance is lower than a preset standard value and sends out a tightness check notice and a temperature control check signal;
if C is more than C1 and less than or equal to C2, the central control module judges that the actual resistance is within an allowable range, the diffusion uniformity is normal at the present stage and controls the diffusion device to normally perform diffusion operation;
if C is more than C2, the central control module judges that the diffusion uniformity reaches the standard at the present stage and continues normal diffusion;
further, when the central control module determines that Q is greater than Q2, the central control module adjusts the internal and external pressure values F to corresponding values according to the comparison result of the difference value delta Q between the diffusion concentration and the preset difference value, the central control module is provided with a preset internal and external pressure value F0, a preset first diffusion concentration difference value delta Q1, a preset second diffusion concentration difference value delta Q2, a preset first internal and external pressure adjusting coefficient gamma 1 and a preset second internal and external pressure adjusting coefficient gamma 2, wherein delta Q1 is smaller than delta Q2, gamma 1 is larger than 0 and gamma 2 is smaller than 1,
if the delta Q is less than or equal to the delta Q1, the central control module judges that the difference value between the diffusion concentration and the preset concentration meets the preset standard and does not adjust the internal and external pressure values;
if delta Q1 is less than delta Q and less than or equal to delta Q2, the central control module judges that the difference value between the diffusion concentration and the preset concentration does not meet the preset standard, gamma 2 is used for adjusting the internal and external pressure, the adjusted internal and external pressure value is recorded as F1, and F1= F0 multiplied by gamma 2 is set;
if delta Q is > -delta Q2, the central control module judges that the difference value between the diffusion concentration and the preset concentration does not meet the preset standard, and adjusts the internal and external pressure by using gamma 1, the adjusted internal and external pressure value is recorded as F2, and F2= F0 multiplied by gamma 1 is set;
further, when the central control module finishes the adjustment of the internal pressure and the external pressure, the central control module judges whether equipment faults exist according to the comparison result of the difference value between the actual diffusion concentration and the preset maximum diffusion concentration difference value, the central control module is provided with a preset maximum diffusion concentration difference value delta Qmax,
if delta Q is less than or equal to delta Qmax, the central control module judges that the difference value between the actual diffusion concentration and the preset diffusion concentration meets the preset standard and does not send out equipment fault alarm;
and if delta Q is more than delta Qmax, the central control module judges that the equipment has a fault in the diffusion process and sends a fault alarm.
Further, in the step S2, in the pre-preparation process, the central control module detects the sheet resistance according to the resistance sensor disposed in the N + region during the diffusion process and determines whether the diffusion process during the pre-preparation process is uniform according to the sheet resistance detection result, the central control module is provided with a preset first sheet resistance R1 and a preset second sheet resistance R2, wherein R1 is less than R2,
if R is not more than R1, the central control module judges that the actual square resistance R is lower than the preset standard and uploads the square resistance to a storage database for later use;
if R is more than R1 and less than or equal to R2, the central control module judges that the doping concentration of the diffusion process in the pre-preparation process is in an allowable range, calculates the difference value delta R between the actual square resistance R and the preset resistance R1, adjusts the heating speed of the preset diffusion process of the system to a corresponding value according to the comparison result of the difference value between the actual square resistance and the preset resistance and the difference value of the preset resistance, and sets delta R = R-R1;
if R is larger than R2, the central control module judges that the doping concentration in the diffusion process in the pre-preparation process is not uniform and uploads the parameter data in the preparation process to the cloud-end database for recording.
Further, when the central control module finishes the preliminary judgment of the diffusion uniformity in the pre-preparation process and R1 is more than or equal to R2, the central control module adjusts the heating speed of the preset diffusion process of the system to a corresponding value according to the comparison result of the difference value delta R between the actual square resistance and the preset resistance and the difference value of the preset resistance, the central control module is provided with a preset heating speed V0, a preset first square resistance difference value delta R1, a preset second square resistance difference value delta R2, a preset first heating speed adjusting coefficient alpha 1 and a preset second heating speed alpha 2, wherein delta R1 is less than delta R2, and alpha 1 is more than 0 and less than 1 and less than alpha 2,
if the delta R is less than or equal to the delta R1, the central control module judges that the difference value between the actual square resistance and the preset square resistance meets the preset requirement and does not adjust the heating speed;
if the delta R is more than or equal to the delta R1 and less than or equal to the delta R2, the central control module judges that the difference value between the actual square resistance and the preset square resistance does not meet the preset standard, alpha 2 is used for adjusting the temperature rising speed, the adjusted temperature rising speed is marked as V1, and V1= V0 multiplied by alpha 2 is set;
if DeltaR >. DELTA.R 2, the central control module judges that the difference value between the actual square resistance and the preset square resistance does not meet the preset requirement, adjusts the heating speed by using alpha 1, records the adjusted heating speed as V1, and sets V2= V0 multiplied by alpha 1.
Further, when the central control module finishes adjusting the temperature rise speed, the central control module controls the resistance sensor to detect the square resistance values in different time periods in the diffusion process and adjusts the diffusion time to a corresponding value according to the comparison result of the square resistance R' in different time periods and the preset resistance, the central control module is provided with a preset diffusion time T0, a preset third block preset resistance Ra, a preset fourth block preset resistance Rb, a preset first diffusion time adjustment coefficient β 1 and a preset second diffusion time adjustment coefficient β 2, wherein β 1 is greater than 0 and less than β 2 and less than 1,
if R' is less than or equal to Ra, the central control module judges that the square resistance in different time periods meets the preset standard and does not adjust the diffusion time;
if Ra < R ' < Rb, the central control module judges that the sheet resistance in different time periods does not meet the preset standard and adjusts the diffusion time by using beta 1, and the adjusted diffusion time is recorded as T ', and T ' = T0 multiplied by beta 1 is set;
if R ' > Rb, the central control module judges that the sheet resistance in different time periods does not meet a preset standard, adjusts the diffusion time by using beta 2, marks the adjusted diffusion time as T ', and sets T ' = T0 multiplied by beta 2;
further, when the central control module completes the adjustment of the diffusion time, the central control module judges whether the sheet resistance and the diffusion concentration need to be secondarily detected according to the pressure variation quantity delta P detected by a pressure detector of a pressure sealing mechanism arranged in the diffusion furnace, the central control module is provided with a preset first pressure variation quantity delta P1 and a preset second pressure variation quantity delta P2, the pressure at the first detection is set to be P1, the pressure at the second detection is set to be P2, and delta P = P1-P2,
if the delta P is less than or equal to the delta P1, the central control module judges that the pressure variation meets the preset standard and does not perform secondary detection on the resistance and the diffusion concentration of the square block;
if the pressure variation quantity is less than or equal to delta P2 and is less than delta P1, the central control module judges that the pressure variation quantity does not meet a preset standard, controls the concentration detector and the resistance sensor to carry out secondary detection on the square resistance and the diffusion concentration, and judges whether the tightness problem occurs according to the detection result when the detection is finished;
if delta P is greater than delta P2, the central control module judges that the pressure variation exceeds a preset standard and sends out a tightness alarm.
Further, when the central control module completes the judgment of whether the secondary detection is carried out on the square resistance and the diffusion concentration and the delta P1 is less than or equal to the delta P2, the central control module further judges whether the tightness problem occurs according to the square resistance and the diffusion concentration which are detected secondarily, the central control module is provided with a preset square resistance R0 and a preset diffusion concentration Q0,
if R = R0 and Q = Q0, the central control module judges that the diffusion furnace has no tightness problem and does not send out equipment maintenance notice;
and if R is not equal to R0 or Q is not equal to Q0, the central control module judges that the diffusion furnace has a tightness problem, suspends the preparation operation and sends out an equipment maintenance notice.
Compared with the prior art, the process has the advantages that the resistance sensor, the concentration sensor and the pressure sensor are arranged, the square resistance of the N + region subjected to the diffusion of the prefabricated device can be detected, whether the diffusion is uniform or not can be judged according to the comparison result of the detection result and the preset square resistance, when the central control module judges that the judgment on the diffusion uniformity is finished, the preliminary judgment can be carried out on whether the diffusion process in the prefabricated device process is qualified or not according to the detected actual doping concentration, when the preliminary judgment is finished, the heating speed in the diffusion process can be adjusted to a corresponding value according to the comparison result of the difference value of the detected concentration and the preset concentration difference value, the condition that the internal and external pressure difference values are abnormal or the device fault occurs in the preprocessing process can be judged according to the actual concentration difference value and the preset maximum difference value, the method has the advantages that the doping concentration of the N + region of the solar cell is reduced while the uniformity of the diffusion concentration is ensured, the working efficiency and the accurate control capability of the diffusion process are improved, and the reduction of the doping concentration in the diffusion process and the accurate control of the diffusion uniformity are realized.
Furthermore, the process can detect the diffusion concentration in the preparation process in advance and preliminarily judge whether the concentration in the diffusion process is qualified or not according to the detected concentration by setting the preset first diffusion concentration and the preset second diffusion concentration, so that the detection accuracy is improved, and the reduction of the doping concentration in the diffusion process and the accurate control of the diffusion uniformity are further realized.
Furthermore, the process of the invention can judge the diffusion uniformity at the present stage according to the resistance detected by the resistance sensor by setting the preset first resistance and the preset second resistance, thereby further realizing the reduction of the doping concentration and the accurate control of the diffusion uniformity in the diffusion process.
Furthermore, according to the process, the internal and external pressure values F can be adjusted to corresponding values according to the comparison result of the difference value of the diffusion concentration and the preset difference value by setting the preset internal and external pressure value, the preset first diffusion concentration difference value, the preset second diffusion concentration difference value, the preset first internal and external pressure adjusting coefficient and the preset second internal and external pressure adjusting coefficient gamma 2, so that the reduction of the doping concentration in the diffusion process and the accurate control of the diffusion uniformity are further realized.
Furthermore, the process of the invention can judge whether equipment faults exist according to the comparison result of the difference value between the actual diffusion concentration and the preset maximum diffusion concentration difference value by setting the preset maximum diffusion concentration difference value, thereby further realizing the reduction of the doping concentration in the diffusion process and the accurate control of the diffusion uniformity.
Furthermore, according to the process, the preset first square resistor and the preset second square resistor are arranged, the square resistors can be detected according to the resistor sensors arranged in the N + region in the diffusion process, whether the diffusion process in the pre-preparation process is uniform or not can be judged according to the square resistor detection result, the accurate judgment on the diffusion uniformity degree is improved, and the reduction of the doping concentration in the diffusion process and the accurate control on the diffusion uniformity are further realized.
Furthermore, according to the process, the preset temperature rise speed, the preset first square resistance difference value, the preset second square resistance difference value, the preset first temperature rise speed regulating coefficient and the preset second temperature rise speed are set, so that the temperature rise speed in the preset diffusion process of the system can be regulated to a corresponding value according to the comparison result of the difference value delta R between the actual square resistance and the preset resistance difference value, the temperature precision control capability in the diffusion process is improved, and the reduction of the doping concentration in the diffusion process and the precision control of the diffusion uniformity are further realized.
Furthermore, according to the process, by setting the preset diffusion time, the preset third-block preset resistance, the preset fourth-block preset resistance, the preset first diffusion time adjustment coefficient and the preset second diffusion time adjustment coefficient, the diffusion time can be adjusted to a corresponding value according to the comparison result of the block resistance R' and the preset resistance in different time periods, the accurate control capability of the diffusion time is improved, and the reduction of the doping concentration in the diffusion process and the accurate control of the diffusion uniformity are further realized.
Furthermore, the process of the invention can determine whether the sheet resistance and the diffusion concentration need to be secondarily detected according to the pressure variation detected by the pressure detector of the pressure sealing mechanism arranged in the diffusion furnace by setting the preset first pressure variation and the preset second pressure variation, thereby further improving the coordination control capability of the diffusion concentration and the diffusion uniformity and further realizing the reduction of the doping concentration in the diffusion process and the accurate control of the diffusion uniformity.
Furthermore, the process of the invention can further judge whether the tightness problem occurs according to the quadratic resistance and the diffusion concentration detected twice by setting the preset quadratic resistance and the preset diffusion concentration, thereby further realizing the reduction of the doping concentration in the diffusion process and the accurate control of the diffusion uniformity.
Drawings
Fig. 1 is a flow chart of a diffusion process for reducing the doping concentration of an N + region of a solar cell according to the present invention.
Detailed Description
In order that the objects and advantages of the invention will be more clearly understood, the invention is further described below with reference to examples; it should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only for explaining the technical principle of the present invention, and do not limit the scope of the present invention.
Referring to fig. 1, a diffusion process for reducing the doping concentration of an N + region of a solar cell includes:
step S1, a worker prepares the solar cell in advance, puts the cleaned and textured crystalline silicon slice into a furnace cavity in the process of preparation in advance, and introduces nitrogen into the furnace cavity in the process of putting in the crystalline silicon slice;
step S2, the central control module controls the concentration sensor to detect the doping concentration of the N + region when the solar cell prefabrication is finished and preliminarily determines whether the diffusion process in the prefabrication process is qualified or not according to the detected actual doping concentration, when the preliminary determination is finished, the central control module adjusts the temperature rise speed in the diffusion process to a corresponding value according to the comparison result of the difference value between the detected concentration and the preset concentration difference value, and when the central control module finishes the adjustment of the temperature rise speed, the central control module judges that the internal and external pressure difference value is abnormal or the equipment fault occurs in the preprocessing process according to the preset maximum diffusion concentration difference value;
step S3, when the central control module finishes adjusting the doping concentration, the central control module controls the resistance sensor to detect the square resistance of the N + region and judges whether the diffusion is uniform or not according to the comparison result of the actual square resistance and the preset resistance, and when the judgment of the diffusion uniformity is finished, the central control module further judges the diffusion uniformity according to the difference value of the square resistance and the preset resistance.
The process can detect the square resistance of the N + region of the prefabricated device after finishing diffusion and judge whether the diffusion is uniform or not according to the comparison result of the detection result and the preset square resistance by arranging the resistance sensor, the concentration sensor and the pressure sensor, can preliminarily judge whether the diffusion process in the prefabricated device process is qualified or not according to the detected actual doping concentration when the central control module judges that the diffusion uniformity is finished, can regulate the heating speed in the diffusion process to a corresponding value according to the comparison result of the difference value of the detected concentration and the preset concentration difference value when the preliminary judgment is finished, can judge that the internal and external pressure difference value is abnormal or equipment failure occurs in the pretreatment process according to the actual concentration difference value and the preset maximum difference value, realizes the reduction of the doping concentration of the N + region of the solar cell while ensuring the uniformity of the diffusion concentration, the working efficiency and the accurate control capability of the diffusion process are improved, and the reduction of the doping concentration in the diffusion process and the accurate control of the diffusion uniformity are realized.
Specifically, in the step S2, the central control module controls the concentration sensor to detect the diffusion concentration in the pre-preparation process and preliminarily determines whether the concentration of the diffusion process is qualified according to the detected concentration Q, the central control module is provided with a preset first diffusion concentration Q1, a preset second diffusion concentration Q2, wherein Q1 < Q2,
if Q is less than or equal to Q1, the central control module judges that the actual detection concentration is lower than the preset standard, controls the resistance sensor to detect the resistance value at the moment and judges the uniformity under the condition that the concentration is lower than the preset value;
if Q1 is more than Q and less than or equal to Q2, the central control module judges that the actual detection concentration is in an allowable range and controls the resistance sensor to detect the resistance value at the moment;
and if Q is more than Q2, the central control module judges that the actual detection concentration does not accord with the preset standard value, calculates the diffusion concentration difference value and adjusts the internal and external pressure values to corresponding values according to the comparison result of the actual difference value and the preset difference value.
According to the process, the preset first diffusion concentration and the preset second diffusion concentration are set, the diffusion concentration in the preparation process can be detected in advance, whether the concentration in the diffusion process is qualified or not can be judged preliminarily according to the detected concentration, the detection accuracy is improved, and the reduction of the doping concentration in the diffusion process and the accurate control of the diffusion uniformity are further realized.
Specifically, when the central control module completes the determination of whether the diffusion concentration is qualified or not and Q is not less than Q1 or Q1 is more than Q is not less than Q2, the central control module determines the diffusion uniformity at the present stage according to the resistance C detected by the resistance sensor, the central control module is provided with a preset first resistance C1 and a preset second resistance C2, wherein C1 is more than C2,
if C is less than or equal to C1, the central control module judges that the actual resistance is lower than a preset standard value and sends out a tightness check notice and a temperature control check signal;
if C is more than C1 and less than or equal to C2, the central control module judges that the actual resistance is within an allowable range, the diffusion uniformity is normal at the present stage and controls the diffusion device to normally perform diffusion operation;
and if C is more than C2, the central control module judges that the diffusion uniformity at the current stage reaches the standard and continues normal diffusion.
According to the process, the preset first resistor and the preset second resistor are arranged, the diffusion uniformity at the current stage can be judged according to the resistance detected by the resistance sensor, and the reduction of the doping concentration in the diffusion process and the accurate control of the diffusion uniformity are further realized.
Specifically, when the central control module determines that Q is greater than Q2, the central control module adjusts the internal and external pressure values F to corresponding values according to the comparison result of the difference value delta Q between the diffusion concentration and the preset difference value, the central control module is provided with a preset internal and external pressure value F0, a preset first diffusion concentration difference value delta Q1, a preset second diffusion concentration difference value delta Q2, a preset first internal and external pressure adjusting coefficient gamma 1 and a preset second internal and external pressure adjusting coefficient gamma 2, wherein delta Q1 is less than delta Q2, gamma 1 is more than 0 and less than gamma 2 and less than 1,
if the delta Q is less than or equal to the delta Q1, the central control module judges that the difference value between the diffusion concentration and the preset concentration meets the preset standard and does not adjust the internal and external pressure values;
if delta Q1 is less than delta Q and less than or equal to delta Q2, the central control module judges that the difference value between the diffusion concentration and the preset concentration does not meet the preset standard, gamma 2 is used for adjusting the internal and external pressure, the adjusted internal and external pressure value is recorded as F1, and F1= F0 multiplied by gamma 2 is set;
if delta Q is larger than delta Q2, the central control module judges that the difference value between the diffusion concentration and the preset concentration does not meet the preset standard, gamma 1 is used for adjusting the internal pressure and the external pressure, the adjusted internal pressure and the external pressure are recorded as F2, and F2= F0 multiplied by gamma 1 is set.
According to the process, the internal and external pressure values F can be adjusted to corresponding values according to the comparison result of the difference value of the diffusion concentration and the preset difference value by setting the preset internal and external pressure value, the preset first diffusion concentration difference value, the preset second diffusion concentration difference value, the preset first internal and external pressure adjusting coefficient and the preset second internal and external pressure adjusting coefficient gamma 2, so that the reduction of the doping concentration and the accurate control of the diffusion uniformity in the diffusion process are further realized.
Specifically, when the central control module finishes the adjustment of the internal pressure and the external pressure, the central control module judges whether equipment faults exist according to the comparison result of the difference value between the actual diffusion concentration and the preset maximum diffusion concentration difference value, the central control module is provided with the preset maximum diffusion concentration difference value delta Qmax,
if the delta Q is less than or equal to the delta Qmax, the central control module judges that the difference value between the actual diffusion concentration and the preset diffusion concentration meets the preset standard and does not send out an equipment fault alarm;
and if delta Q is more than delta Qmax, the central control module judges that the equipment has a fault in the diffusion process and sends a fault alarm.
According to the process, the preset maximum diffusion concentration difference value is set, whether equipment faults exist can be judged according to the comparison result of the difference value of the actual diffusion concentration and the preset maximum diffusion concentration difference value, and the reduction of the doping concentration in the diffusion process and the accurate control of the diffusion uniformity are further achieved.
Specifically, in the step S2, in the pre-preparation process, the central control module detects the sheet resistance according to the resistance sensor arranged in the N + region in the diffusion process and determines whether the diffusion process in the pre-preparation process is uniform according to the sheet resistance detection result, the central control module is provided with a preset first sheet resistance R1 and a preset second sheet resistance R2, wherein R1 < R2,
if R is not more than R1, the central control module judges that the actual square resistance R is lower than the preset standard and uploads the square resistance to a storage database for later use;
if R is more than R1 and less than or equal to R2, the central control module judges that the doping concentration of the diffusion process in the pre-preparation process is in an allowable range, calculates the difference value delta R between the actual square resistance R and the preset resistance R1, adjusts the heating speed of the preset diffusion process of the system to a corresponding value according to the comparison result of the difference value between the actual square resistance and the preset resistance and the difference value of the preset resistance, and sets delta R = R-R1;
if R is larger than R2, the central control module judges that the doping concentration in the diffusion process in the pre-preparation process is not uniform and uploads the parameter data in the preparation process to the cloud-end database for recording.
According to the process, the preset first square resistor and the preset second square resistor are arranged, the square resistors can be detected according to the resistance sensors arranged in the N + region in the diffusion process, whether the diffusion process in the prefabrication process is uniform or not can be judged according to the square resistor detection result, the accurate judgment on the diffusion uniformity degree is improved, and the reduction of the doping concentration in the diffusion process and the accurate control on the diffusion uniformity are further realized.
Specifically, when the central control module completes the preliminary determination of the diffusion uniformity in the pre-preparation process and R1 < R is less than or equal to R2, the central control module adjusts the temperature-raising speed of the system pre-set diffusion process to a corresponding value according to the comparison result of the difference value DeltaR between the actual square resistance and the pre-set resistance difference value, the central control module is provided with a pre-set temperature-raising speed V0, a pre-set first square resistance difference value DeltaR 1, a pre-set second square resistance difference value DeltaR 2, a pre-set first temperature-raising speed adjusting coefficient alpha 1 and a pre-set second temperature-raising speed alpha 2, wherein DeltaR 1 is less than DeltaR 2, and alpha 1 is more than 0 and less than 1 and less than alpha 2,
if the delta R is less than or equal to the delta R1, the central control module judges that the difference value between the actual square resistance and the preset square resistance meets the preset requirement and does not adjust the heating speed;
if the delta R is more than delta R1 and less than or equal to delta R2, the central control module judges that the difference value between the actual square resistance and the preset square resistance does not meet the preset standard and adjusts the temperature rising speed by using alpha 2, the adjusted temperature rising speed is marked as V1, and V1= V0 multiplied by alpha 2 is set;
if DeltaR >. DELTA.R 2, the central control module judges that the difference value between the actual square resistance and the preset square resistance does not meet the preset requirement, adjusts the heating speed by using alpha 1, records the adjusted heating speed as V1, and sets V2= V0 multiplied by alpha 1.
According to the process, the preset temperature rise speed, the preset first square resistance difference value, the preset second square resistance difference value, the preset first temperature rise speed adjusting coefficient and the preset second temperature rise speed are set, the temperature rise speed in the preset diffusion process of the system can be adjusted to a corresponding value according to the comparison result of the difference value delta R between the actual square resistance and the preset resistance difference value, the temperature accurate control capability in the diffusion process is improved, and the reduction of the doping concentration in the diffusion process and the accurate control of the diffusion uniformity are further realized.
Specifically, when the central control module completes the adjustment of the temperature rise speed, the central control module controls the resistance sensor to detect the square resistance values in different time periods in the diffusion process and adjusts the diffusion time to corresponding values according to the comparison results of the square resistance R' in different time periods and the preset resistance, the central control module is provided with a preset diffusion time T0, a preset third block preset resistance Ra, a preset fourth block preset resistance Rb, a preset first diffusion time adjustment coefficient beta 1 and a preset second diffusion time adjustment coefficient beta 2, wherein beta 1 is more than 0 and less than beta 2 and less than 1,
if R' is less than or equal to Ra, the central control module judges that the square resistance in different time periods meets the preset standard and does not adjust the diffusion time;
if Ra is more than R ' and less than or equal to Rb, the central control module judges that the sheet resistance in different time periods does not meet the preset standard and adjusts the diffusion time by using beta 1, and the adjusted diffusion time is recorded as T ', and T ' = T0 multiplied by beta 1 is set;
if R ' > Rb, the central control module judges that the sheet resistance in different time periods does not meet the preset standard and adjusts the diffusion time by using beta 2, the adjusted diffusion time is marked as T ', and T ' = T0 multiplied by beta 2 is set.
According to the process, the diffusion time can be adjusted to a corresponding value according to the comparison result of the square resistor R' and the preset resistor in different time periods by setting the preset diffusion time, the preset third-block resistor, the preset fourth-block resistor, the preset first diffusion time adjustment coefficient and the preset second diffusion time adjustment coefficient, so that the accurate control capability of the diffusion time is improved, and the reduction of the doping concentration in the diffusion process and the accurate control of the diffusion uniformity are further realized.
Specifically, when the central control module finishes the adjustment of the diffusion time, the central control module judges whether the sheet resistance and the diffusion concentration need to be secondarily detected according to the pressure change quantity delta P detected by a pressure detector of a pressure sealing mechanism arranged in the diffusion furnace, the central control module is provided with a preset first pressure change quantity delta P1 and a preset second pressure change quantity delta P2, the pressure during the first detection is set to be P1, the pressure during the second detection is set to be P2, and delta P = P1-P2,
if the delta P is less than or equal to the delta P1, the central control module judges that the pressure variation meets the preset standard and does not perform secondary detection on the resistance and the diffusion concentration of the square block;
if the pressure variation quantity is less than or equal to delta P2 and is less than delta P1, the central control module judges that the pressure variation quantity does not meet a preset standard, controls the concentration detector and the resistance sensor to carry out secondary detection on the square resistance and the diffusion concentration, and judges whether the tightness problem occurs according to the detection result when the detection is finished;
if delta P is larger than delta P2, the central control module judges that the pressure variation exceeds a preset standard and sends out a tightness alarm.
According to the process, the preset first pressure variation and the preset second pressure variation are set, whether the sheet resistance and the diffusion concentration need to be secondarily detected or not can be judged according to the pressure variation detected by the pressure detector of the pressure sealing mechanism of the diffusion furnace, the coordination control capability of the diffusion concentration and the diffusion uniformity is further improved, and the reduction of the doping concentration in the diffusion process and the accurate control of the diffusion uniformity are further realized.
Specifically, when the central control module completes the judgment of whether the quadratic detection is carried out on the square resistance and the diffusion concentration and whether the triangle P1 is less than the triangle P and less than or equal to the triangle P2, the central control module further judges whether the tightness problem occurs according to the quadratic resistance and the diffusion concentration which are detected secondarily, the central control module is provided with a preset square resistance R0 and a preset diffusion concentration Q0,
if R = R0 and Q = Q0, the central control module judges that the diffusion furnace has no tightness problem and does not send out equipment maintenance notice;
and if R is not equal to R0 or Q is not equal to Q0, the central control module judges that the diffusion furnace has the tightness problem, suspends the preparation operation and sends out an equipment maintenance notice.
According to the process, whether the tightness problem occurs or not can be further judged according to the quadratic resistance and the diffusion concentration detected twice by setting the preset quadratic resistance and the preset diffusion concentration, and the reduction of the doping concentration in the diffusion process and the accurate control of the diffusion uniformity are further realized.
So far, the technical solutions of the present invention have been described in connection with the preferred embodiments shown in the drawings, but it is apparent to those skilled in the art that the scope of the present invention is not limited to these specific embodiments. Equivalent changes or substitutions of related technical features can be made by those skilled in the art without departing from the principle of the invention, and the technical scheme after the changes or substitutions can fall into the protection scope of the invention.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention; various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A diffusion process for reducing the doping concentration of an N + region of a solar cell, comprising:
step S1, a worker prepares the solar cell in advance, puts the cleaned and textured crystalline silicon slice into a furnace cavity in the process of preparation in advance, and introduces nitrogen into the furnace cavity in the process of putting in the crystalline silicon slice;
step S2, when the solar cell prefabrication is finished, the central control module controls the concentration sensor to detect the doping concentration of the N + region and preliminarily judges whether the diffusion process in the prefabrication process is qualified or not according to the detected actual doping concentration, when the preliminary judgment is finished, the central control module adjusts the temperature rise speed in the diffusion process to a corresponding value according to the comparison result of the difference value between the detected concentration and the preset concentration difference value, and when the central control module finishes the adjustment of the temperature rise speed, the central control module judges that the condition that the internal and external pressure difference value is abnormal or equipment failure occurs in the prefabrication process according to the preset maximum diffusion concentration difference value;
step S3, when the central control module finishes adjusting the doping concentration, the central control module controls the resistance sensor to detect the square resistance of the N + region and judges whether the diffusion is uniform according to the comparison result of the actual square resistance and the preset resistance, and when the judgment of whether the diffusion is uniform is finished, the central control module further judges the diffusion uniformity according to the difference value of the square resistance and the preset resistance.
2. The diffusion process for reducing the doping concentration of the N + region of the solar cell as claimed in claim 1, wherein in the step S2, the central control module controls the concentration sensor to detect the diffusion concentration during the pre-preparation process and makes a preliminary determination as to whether the concentration of the diffusion process is acceptable according to the detected concentration Q, the central control module is provided with a preset first diffusion concentration Q1, a preset second diffusion concentration Q2, wherein Q1 < Q2,
if Q is less than or equal to Q1, the central control module judges that the actual detection concentration is lower than the preset standard, controls the resistance sensor to detect the resistance value at the moment and judges the uniformity under the condition that the concentration is lower than the preset value;
if Q1 is more than Q and less than or equal to Q2, the central control module judges that the actual detection concentration is in an allowable range and controls the resistance sensor to detect the resistance value at the moment;
and if Q is more than Q2, the central control module judges that the actual detection concentration does not accord with the preset standard value, calculates the diffusion concentration difference value and adjusts the internal and external pressure values to corresponding values according to the comparison result of the actual difference value and the preset difference value.
3. The diffusion process for reducing the doping concentration of the N + region of the solar cell as claimed in claim 2, wherein when the central control module completes the determination of whether the diffusion concentration is qualified or not and Q is not less than Q1 or Q1 is not less than Q2, the central control module determines the diffusion uniformity at that time according to the resistance C detected by the resistance sensor, the central control module is provided with a preset first resistance C1, a preset second resistance C2, wherein C1 is not less than C2,
if C is less than or equal to C1, the central control module judges that the actual resistance is lower than a preset standard value and sends out a tightness check notice and a temperature control check signal;
if C is more than C1 and less than or equal to C2, the central control module judges that the actual resistance is within an allowable range, the diffusion uniformity is normal at the moment, and controls the diffusion device to normally perform diffusion operation;
if C is more than C2, the central control module judges that the diffusion uniformity reaches the standard and continues normal diffusion.
4. The diffusion process of claim 3, wherein when the central control module determines Q > Q2, the central control module adjusts the internal and external pressure values F to corresponding values according to the comparison result between the difference Δ Q between the diffusion concentration and the preset difference, the central control module is provided with a preset internal and external pressure value F0, a preset first diffusion concentration difference Δ Q1, a preset second diffusion concentration difference Δ Q2, a preset first internal and external pressure adjustment coefficient γ 1, and a preset second internal and external pressure adjustment coefficient γ 2, wherein Δ Q1 is less than Δ Q2, and 0 < γ 1 < γ 2 < 1,
if the delta Q is less than or equal to the delta Q1, the central control module judges that the difference value between the diffusion concentration and the preset concentration meets the preset standard and does not adjust the internal and external pressure values;
if delta Q1 is less than delta Q and less than or equal to delta Q2, the central control module judges that the difference value between the diffusion concentration and the preset concentration does not meet the preset standard, gamma 2 is used for adjusting the internal and external pressure, the adjusted internal and external pressure value is recorded as F1, and F1= F0 multiplied by gamma 2 is set;
if delta Q is > -delta Q2, the central control module judges that the difference value between the diffusion concentration and the preset concentration does not meet the preset standard, and adjusts the internal and external pressure by using gamma 1, the adjusted internal and external pressure value is recorded as F2, and F2= F0 multiplied by gamma 1 is set.
5. The diffusion process for reducing the doping concentration of the N + region of the solar cell as claimed in claim 4, wherein when the central control module completes the adjustment of the internal and external pressures, the central control module determines whether there is an equipment fault according to the comparison result of the difference between the actual diffusion concentration and the preset maximum diffusion concentration difference, the central control module is provided with the preset maximum diffusion concentration difference Δ Qmax,
if delta Q is less than or equal to delta Qmax, the central control module judges that the difference value between the actual diffusion concentration and the preset diffusion concentration meets the preset standard and does not send out equipment fault alarm;
and if delta Q is more than delta Qmax, the central control module judges that the equipment has a fault in the diffusion process and sends a fault alarm.
6. The diffusion process for reducing the doping concentration of the N + region of the solar cell as claimed in claim 5, wherein in the step S3, during the pre-preparation process, the central control module detects the sheet resistance according to the resistance sensor disposed in the N + region during the diffusion process and determines whether the diffusion process is uniform during the pre-preparation process according to the sheet resistance detection result, the central control module is provided with a preset first sheet resistance R1 and a preset second sheet resistance R2, wherein R1 < R2,
if R is not more than R1, the central control module judges that the actual square resistance R is lower than the preset standard and uploads the square resistance to a storage database for later use;
if R is more than R1 and less than or equal to R2, the central control module judges that the doping concentration of the diffusion process in the pre-preparation process is in an allowable range, calculates the difference value delta R between the actual square resistance R and the preset resistance R1, adjusts the heating speed of the preset diffusion process of the system to a corresponding value according to the comparison result of the difference value between the actual square resistance and the preset resistance and the difference value of the preset resistance, and sets delta R = R-R1;
and if R is more than R2, the central control module judges that the doping concentration in the diffusion process in the pre-preparation process is not uniform and uploads the parameter data in the preparation process to the cloud-end database for recording.
7. The diffusion process of claim 6, wherein when the central control module performs the preliminary determination of diffusion uniformity during the pre-fabrication process and R1 < R ≦ R2, the central control module adjusts the temperature-raising speed of the system pre-determined diffusion process to a corresponding value according to the comparison result of the difference Δ R between the actual sheet resistance and the pre-determined resistance difference, and the central control module is provided with a pre-determined temperature-raising speed V0, a pre-determined first sheet resistance difference Δ R1, a pre-determined second sheet resistance difference Δ R2, a pre-determined first temperature-raising speed adjustment coefficient α 1, and a pre-determined second temperature-raising speed α 2, wherein Δ R1 < [ delta ] R2, and 0 < α 1 < α 2,
if the delta R is less than or equal to the delta R1, the central control module judges that the difference value between the actual square resistance and the preset square resistance meets the preset requirement and does not adjust the heating speed;
if the delta R is more than or equal to the delta R1 and less than or equal to the delta R2, the central control module judges that the difference value between the actual square resistance and the preset square resistance does not meet the preset standard, alpha 2 is used for adjusting the temperature rising speed, the adjusted temperature rising speed is marked as V1, and V1= V0 multiplied by alpha 2 is set;
if DeltaR >. DELTA.R 2, the central control module judges that the difference value between the actual square resistance and the preset square resistance does not meet the preset requirement, adjusts the heating speed by using alpha 1, records the adjusted heating speed as V1, and sets V2= V0 multiplied by alpha 1.
8. The diffusion process according to claim 7, wherein when the central control module completes the adjustment of the temperature raising rate, the central control module controls the resistance sensor to detect the sheet resistance values in different time periods during the diffusion process and adjusts the diffusion time to a corresponding value according to the comparison result between the sheet resistance R' in different time periods and the preset resistance, and the central control module has a preset diffusion time T0, a preset third block preset resistance Ra, a preset fourth block preset resistance Rb, a preset first diffusion time adjustment coefficient β 1 and a preset second diffusion time adjustment coefficient β 2, wherein 0 < β 1 < β 2 < 1,
if R' is less than or equal to Ra, the central control module judges that the square resistance in different time periods meets the preset standard and does not adjust the diffusion time;
if Ra < R ' < Rb, the central control module judges that the sheet resistance in different time periods does not meet the preset standard and adjusts the diffusion time by using beta 1, and the adjusted diffusion time is recorded as T ', and T ' = T0 multiplied by beta 1 is set;
if R ' > Rb, the central control module judges that the sheet resistance in different time periods does not meet the preset standard and adjusts the diffusion time by using beta 2, the adjusted diffusion time is marked as T ', and T ' = T0 multiplied by beta 2 is set.
9. The diffusion process for reducing the doping concentration of the N + region of the solar cell as claimed in claim 8, wherein when the central control module completes the adjustment of the diffusion time, the central control module determines whether the secondary detection of the sheet resistance and the diffusion concentration is required according to the pressure variation Δ P detected by the pressure detector of the pressure sealing mechanism disposed in the diffusion furnace, the central control module is provided with a preset first pressure variation Δ P1 and a preset second pressure variation Δ P2, the pressure at the first detection is set to be P1, the pressure at the second detection is set to be P2, and Δ P = P1-P2,
if the delta P is less than or equal to the delta P1, the central control module judges that the pressure variation meets the preset standard and does not perform secondary detection on the resistance and the diffusion concentration of the square block;
if the pressure variation quantity is less than or equal to delta P2 and is less than delta P1, the central control module judges that the pressure variation quantity does not meet a preset standard, controls the concentration sensor and the resistance sensor to carry out secondary detection on the square resistance and the diffusion concentration, and judges whether the tightness problem occurs according to the detection result when the detection is finished;
if delta P is larger than delta P2, the central control module judges that the pressure variation exceeds a preset standard and sends out a tightness alarm.
10. The diffusion process of claim 9, wherein when the central control module determines whether the second detection of the square resistance and the diffusion concentration is performed and Δ P1 is less than Δ P ≦ Δ P2, the central control module further determines whether the hermeticity problem occurs according to the secondarily detected square resistance and the diffusion concentration, the central control module is provided with a preset square resistance R0 and a preset diffusion concentration Q0,
if R = R0 and Q = Q0, the central control module judges that the diffusion furnace has no tightness problem and does not send out equipment maintenance notice;
and if R is not equal to R0 or Q is not equal to Q0, the central control module judges that the diffusion furnace has a tightness problem, suspends the preparation operation and sends out an equipment maintenance notice.
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