CN114614257B - Planar high-isolation K/Ka frequency band common-caliber phased array antenna - Google Patents
Planar high-isolation K/Ka frequency band common-caliber phased array antenna Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
- H01Q1/521—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas
- H01Q1/523—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas between antennas of an array
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/0006—Particular feeding systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
- H01Q21/061—Two dimensional planar arrays
- H01Q21/065—Patch antenna array
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Abstract
The invention discloses a planar high-isolation K/Ka frequency band common-aperture phased-array antenna, and belongs to the technical field of millimeter wave circular polarization common-aperture antennas. The antenna comprises a multilayer dielectric substrate, wherein a tenth dielectric layer of the multilayer dielectric substrate is an antenna unit, and a K-frequency band metal patch array structure and a Ka-frequency band metal patch array structure are arranged on the tenth dielectric layer; the first metal ground layer is a metal ground and is connected with BGA metal planting balls for realizing telecommunication connection with a subsequent chip multilayer medium substrate; and each layer between the tenth dielectric layer and the first metal stratum is a radio frequency signal wiring, a K/Ka frequency band filtering structure, an antenna metal ground and a filtering metal ground. The K-band filtering structure comprises two K-band filtering structures and two Ka-band filtering structures, and the two filtering structures in each frequency band are arranged at different positions. Through the mode, the problems that the filtering structure of the millimeter wave common-caliber phased-array antenna is difficult to integrate and the isolation between different frequency units is difficult to improve are solved.
Description
Technical Field
The invention belongs to the technical field of millimeter wave circular polarization common-aperture antennas, and particularly relates to a planar high-isolation K/Ka frequency band common-aperture phased array antenna.
Background
The low earth orbit satellite constellation is an important component of the heaven and earth integrated information network, and the rapid development of the low earth orbit satellite constellation can promote the communication of the heaven and earth integrated information network and promote the new change of information infrastructure. In order to meet the high-flux data transmission requirements of military use and civil use, the related low-earth-orbit satellite communication frequency band is expanded from C, X frequency band to K/Ka frequency band.
The phased array antenna has flexible and rapid beam forming capability and wide-range beam covering capability, is an important component in a satellite communication wireless system, and in recent years, with the rapid development of satellite communication, new requirements are put forward on the satellite communication antenna: the common-caliber multiplexing of the transmitting and receiving array surfaces is realized, so that the overall size of the transmitting and receiving is reduced, the transmitting and receiving array surfaces can be flexibly applied to a miniaturized carrying platform, and the system manufacturing, load transmitting and recycling cost and the like are reduced; secondly, the frequency band is wide, and the requirement of military and civil large-capacity data transmission is met; and thirdly, the K/Ka frequency band transmitting-receiving isolation degree is high, the transmitting-receiving interference suppression capability is strong, and the simultaneous working of the transmitting-receiving channels after the shared aperture can be met.
At present, common K/Ka or common-caliber antenna arrays with similar frequency ratios have the problems that a filtering structure is difficult to integrate, and the isolation between different frequency units is low.
The Chinese patent application 201910094604.X discloses a dual-frequency dual-circular-polarization common-aperture antenna array for two-dimensional phased array scanning, the common-aperture antenna array is formed by splicing a layer of dielectric substrate and a layer of metal baseplate, and K/Ka frequency band antennas all adopt single coaxial feed, so that common-aperture multiplexing is also realized. However, because the structure does not have an integrated filtering structure, the isolation between antenna channels is poor, the simultaneous operation of transmitting and receiving is difficult to satisfy, and the bandwidth of a single-layer structure is often insufficient.
Disclosure of Invention
The invention aims to provide a planar high-isolation K/Ka frequency band common-caliber phased-array antenna, which solves the problems that the filtering structure of the K/Ka frequency band common-caliber phased-array antenna is difficult to integrate, the isolation between different frequency units is low and the simultaneous work of transmitting and receiving is difficult to meet on the premise of ensuring the bandwidth.
In order to achieve the purpose, the invention adopts the following technical scheme:
a planar high-isolation K/Ka frequency band common-caliber phased-array antenna comprises a multilayer medium substrate, a K frequency band metal patch array structure, a Ka frequency band metal patch array structure, a K frequency band filtering structure and a Ka frequency band filtering structure;
the multilayer dielectric substrate comprises a first metal stratum, a first dielectric layer, a second metal stratum, a third dielectric layer, a fourth dielectric layer, a third metal stratum, a fifth dielectric layer, a fourth metal stratum, a sixth dielectric layer, a seventh dielectric layer, a fifth metal stratum, an eighth dielectric layer, a ninth dielectric layer, a tenth dielectric layer and an eleventh dielectric layer which are sequentially stacked from bottom to top;
the lower surface of the first metal stratum is connected with BGA metal planting balls for realizing telecommunication connection with a subsequent chip multilayer medium substrate, and the upper surface of the first metal stratum is provided with a first metal column and a second metal column; the first metal column is connected with a fifth metal stratum, a fourth metal stratum, a third metal stratum and a second metal stratum; the second metal column is connected with the BGA metal ball planting, the fourth metal stratum, the third metal stratum and the second metal stratum;
a Ka frequency band one-to-two power divider metal layer is arranged between the first dielectric layer and the second dielectric layer; a third metal column is arranged on the upper surface of the Ka frequency band one-to-two power divider metal layer, and a fourth metal column is arranged on the lower surface of the Ka frequency band one-to-two power divider metal layer; connecting the Ka frequency band metal array structure through a third metal column for feeding; the fourth metal column is connected with the BGA metal planting balls;
a fifth metal column is arranged on the upper surface of the third metal stratum and connected with a fourth metal stratum through the fifth metal column;
a K frequency band feed structure is arranged on the fourth metal layer; the K frequency band feeding structure realizes K frequency band feeding through a cross slot array structure on a fifth metal stratum;
the cross groove array structure arranged on the fifth metal ground layer is positioned right below the K frequency band metal patch array structure, and cross grooves in the cross groove array structure correspond to metal patches in the K frequency band metal patch array one by one;
a sixth metal layer is arranged on the upper surface of the third medium layer and connected with the second metal column;
the upper surface of the tenth dielectric layer is provided with a K-frequency-band metal patch array structure, the lower surface of the tenth dielectric layer is provided with a Ka-frequency-band metal patch array structure, and the Ka-frequency-band metal patch array structure is opposite to the K-frequency-band metal patch array structure; each patch of the Ka frequency band metal patch array structure is connected with a metal layer of the Ka frequency band one-to-two power divider through a third metal column, and the projection of the metal patch of the Ka frequency band metal patch array structure on the tenth medium layer is not overlapped with the projection of the metal patch of the K frequency band metal patch array structure on the tenth medium layer;
the K frequency band filtering structure comprises a first K frequency band filtering structure and a second K frequency band filtering structure, the first K frequency band filtering structure is arranged on any one of a second metal stratum, a sixth metal layer, a third metal stratum or a fourth metal stratum, and the second K frequency band filtering structure is arranged on the Ka frequency band one-in-two power divider metal layer; the Ka frequency band filtering structure comprises a first Ka frequency band filtering structure and a second Ka frequency band filtering structure; the first Ka frequency band filtering structure is arranged on the K frequency band feeding structure; the second Ka frequency band filtering structure is arranged on the second metal stratum or the sixth metal layer; when the first K frequency band filtering structure is arranged on the fourth metal stratum, the first K frequency band filtering structure is not in contact with the K frequency band feeding structure and the second Ka frequency band filtering structure.
Furthermore, the K-frequency band metal patch array structure is formed by arranging a plurality of metal patch units in an array manner; when the metal patches are arranged, a space is arranged between every two adjacent metal patches and is larger than 0; the number of the metal patches of the metal patch unit is 4, the central points of the 4 metal patches are respectively positioned on 4 vertexes of a square, a space larger than 0 is also arranged between every two adjacent metal patches, and the space between every two adjacent metal patches is equal to the space between every two adjacent metal patch units; ka frequency channel metal paster array structure 13 is the same with K frequency channel metal paster array structure's structure, and the difference is: in the Ka frequency band metal patch array structure, the distance between two adjacent metal patches is larger than the distance between two adjacent metal patches in the K frequency band metal patch array structure.
Furthermore, the projection of the K-band metal patch array structure on the tenth medium layer and the projection of the Ka-band metal patch array structure on the tenth medium layer are in the same region, the metal patch unit in the K-band metal patch array structure is used as a first metal patch unit, and the metal patch unit in the Ka-band metal patch array structure is used as a second metal patch unit; the second metal patch unit is nested in the first metal patch unit, and four vertexes of the K frequency band metal patch unit are respectively positioned on the middle points of the 4 sides of the square of the Ka frequency band metal patch unit.
Furthermore, the ratio of the space between two adjacent metal patches in the K-band metal patch array structure to the space between two adjacent metal patches in the Ka-band metal patch array structure is
。
Furthermore, the K-band filtering structure and the Ka-band filtering structure are non-closed structures and formed by randomly bending parallel or serial metal microstrip lines, and the line widths of the metal microstrip lines selected by the K-band filtering structure and the Ka-band filtering structure are unequal.
Furthermore, the K-band feed structure is a non-closed structure and consists of an L-shaped structure and a V-shaped structure, and the short side of the L-shaped structure is connected with one side of the V-shaped structure; the L-shaped structure and the V-shaped structure are both formed by bending metal microstrip lines.
The invention provides a planar high-isolation K/Ka frequency band common-aperture phased-array antenna. The K-band phased array antenna and the Ka-band phased array antenna adopt respective independent filtering structures, so that the isolation between the common-caliber different frequency channels is improved; in the integration process, a preferable scheme is further provided, namely the first filtering structures in the K-band filtering structure and the Ka-band filtering structure are arranged on the same layer, so that the whole size of the device is smaller. Compared with a K/Ka frequency band common-aperture phased-array antenna in the prior art, the millimeter wave common-aperture phased-array antenna and the method have the advantages that the problems that the filtering structure of the millimeter wave common-aperture phased-array antenna is difficult to integrate and the isolation between different frequency units is difficult to improve are solved.
Drawings
FIG. 1 is a schematic side sectional view of the present invention in its entirety;
FIG. 2 is a schematic top view of a K-band metal patch array structure and a Ka-band metal patch array structure in the embodiment;
FIG. 3 is a schematic top view of a fifth metal layer in the embodiment;
FIG. 4 is a schematic diagram illustrating a top view of a fourth metal formation in the embodiment;
FIG. 5 is a schematic top view of a sixth metal layer in an embodiment;
FIG. 6 is a schematic top view of a metal layer of the Ka band one-to-two power divider according to an embodiment;
FIG. 7 is a coupling diagram of adjacent transmit-receive channels when the planar high-isolation K/Ka band common-aperture phased-array antenna of the embodiment is not loaded with high-frequency filter branches;
FIG. 8 is a coupling diagram of adjacent transmit-receive channels when the planar high-isolation K/Ka frequency band common-caliber phased-array antenna loads the high-frequency filter stub according to the embodiment;
FIG. 9 is a coupling diagram of adjacent transmit-receive channels when the low-frequency filter branches are not loaded on the planar high-isolation K/Ka frequency band common-aperture phased-array antenna of the embodiment;
FIG. 10 is a diagram of coupling between adjacent transmit and receive channels when the planar high-isolation K/Ka band common-aperture phased-array antenna loads low-frequency filter branches according to an embodiment.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
The embodiment provides a planar high-isolation K/Ka frequency band common-aperture phased-array antenna, the overall height is controlled to be about 3mm, the overall height is smaller than half of the wavelength corresponding to the highest working frequency, and the planar high-isolation K/Ka frequency band common-aperture phased-array antenna is suitable for low-profile and planar application platforms. The structure of the dielectric substrate is shown in figure 1 and comprises a multilayer dielectric substrate, a K-band metal patch array structure 12, a Ka-band metal patch array structure 13, a K-band filter structure and a Ka-band filter structure.
The multilayer dielectric substrate comprises a first metal stratum 20, a first dielectric layer 11, a second dielectric layer 10, a second metal stratum 18, a third dielectric layer 9, a fourth dielectric layer 8, a third metal stratum 16, a fifth dielectric layer 7, a fourth metal stratum 15, a sixth dielectric layer 6, a seventh dielectric layer 5, a fifth metal stratum 14, an eighth dielectric layer 4, a ninth dielectric layer 3, a tenth dielectric layer 2 and an eleventh dielectric layer 1 which are sequentially stacked from bottom to top.
The lower surface of the first metal ground layer 20 is connected with a BGA metal planting ball 26 for realizing telecommunication connection with a subsequent chip multilayer medium substrate, and the upper surface is provided with a first metal column 21 and a second metal column 25; the first metal column 21 is a shielding structure of the Ka band antenna, and the first metal column 21 is connected with the fifth metal ground layer 14, the fourth metal ground layer 15, the third metal ground layer 16 and the second metal ground layer 18, and simultaneously realizes coupling of common-frequency or different-frequency electromagnetic energy between the PCBs. The second metal column 25 is used as a signal transmission structure of the K-band antenna, and is connected with the BGA metal ball-planting 26, the fourth metal ground layer 15, the third metal ground layer 16, and the second metal ground layer 18 through the second metal column 25.
A Ka band one-to-two power divider metal layer 19 is disposed between the first dielectric layer 11 and the second dielectric layer 10. In this embodiment, the one-to-two power divider metal layer is made of microstrip lines, and can equally divide an input signal into two paths of signals with equal power, and calculate two paths of output signals with a phase difference of 90 ° according to a length difference of the microstrip lines in the two paths of signals in the process of feeding the circular polarized antenna. A third metal column 22 is arranged on the upper surface of the Ka frequency band one-to-two power divider metal layer 19, and a fourth metal column 23 is arranged on the lower surface of the Ka frequency band one-to-two power divider metal layer; the third metal column 22 and the fourth metal column 23 are used as a signal transmission structure of the Ka band antenna, and after being connected with the Ka band metal patch 13 through the third metal column 22, the Ka band metal patch 13 feeds power; the connection with the BGA metal balls 26 is made through the fourth metal posts 23.
The third metal layer 16 is provided with a fifth metal column 24, and the radiation efficiency of the K frequency band is improved after the connection with the fourth metal layer 15 is realized through the added fifth metal column 24.
A K frequency band feed structure 28 is arranged on the upper surface of the fourth metal stratum 15; the structure is a bent metal microstrip line, one end of the metal microstrip line is firstly bent into an L-shaped structure along the length direction and then is continuously bent into a V-shaped structure; the feed structure realizes the feed of the K frequency band through the cross slot feed on the fifth subordinate stratum. The included angle between the end point of L and the starting point of V is 130-140 degrees, and the L and the V are all bent inwards to approach a square.
FIG. 3 is a schematic diagram of a fifth metal formation 14 from above in an example; as shown in fig. 3, a through cross slot array 27 for realizing energy coupling is arranged on the fifth metal formation 14, the structure of the cross slot array 27 is located right below the K-band metal patch array 12, and the cross slots 27 in the array correspond to the metal patches in the K-band metal patch array one by one.
A sixth metal layer 17 is disposed on the third dielectric layer 9, and the sixth metal layer 17 is connected to the second metal pillar 25.
The upper surface of the tenth dielectric layer 2 is provided with a K frequency band metal patch array structure 12, and the lower surface is provided with a Ka frequency band metal patch array structure 13. The Ka frequency band metal patch array structure 13 is connected with the Ka frequency band one-to-two power divider metal layer 19 through the third metal column 22, and the projection of the metal patch in the Ka frequency band metal patch array structure 13 on the tenth dielectric layer 2 is not overlapped with the projection of the metal patch in the K frequency band metal patch 12 on the tenth dielectric layer 2. The K-band metal patch array structure 12 is formed by arranging a plurality of metal patch units in an array manner; when the metal patch units are arranged, a space is arranged between the adjacent metal patch units, and the space is larger than 0; the metal paster of metal paster unit has 4, and the central point of 4 metal pasters is located 4 summits of a square respectively, also is equipped with the interval that is greater than 0 between the adjacent metal paster, and the interval between the adjacent metal paster equals with the interval between the adjacent unit. Ka frequency channel metal paster array structure 13 is the same with K frequency channel metal paster array structure 12 structure, and the difference is: in the Ka-band metal patch array structure 13, the distance between two adjacent metal patches is smaller than the distance between two adjacent metal patches in the K-band metal patch array structure 12. In this embodiment, the distance between two adjacent metal patches in the K-band metal patch array structure 12 is 7mm, and the distance between two adjacent metal patches in the Ka-band metal patch array structure 13 is 4.95 mm. In practical application, the metal patches in the two frequency band metal patch array structures can be adjusted according to application requirements, and the adjustment range of the metal patches should be controlled within +/-10% of the original distance.
As shown in fig. 2, the Ka-band metal patch array structure 13 faces the K-band metal patch array structure 12, that is, the projection of the K-band metal patch array structure 12 on the tenth dielectric layer 2 is in the same region as the projection of the Ka-band metal patch array structure 13 on the tenth dielectric layer 2. Taking the metal patch unit of the K-frequency band metal patch array structure 12 as a first metal patch unit, and taking the metal patch unit of the Ka-frequency band metal patch array structure 13 as a second metal patch single sheet; the second metal patch unit is nested in the first metal patch unit, and four vertexes of the Ka frequency band metal patch unit are respectively positioned on the middle points of 4 sides of the square of the K frequency band metal patch unit. In the implementation process, in order to ensure good isolation effect, the ratio of the space between two metal patches connected in the K-band metal patch array structure 12 to the space between two adjacent metal patches in the Ka-band metal patch array structure 13 is
. It should be noted that: in this embodiment, each metal patch is a circular structure, the radius of the metal patch is half of the wavelength of the medium, and in the whole array structure, the feeding mode can adopt a probe to directly contact with the feed or indirectly couple the feed, so that electromagnetic energy can be radiated well.
The K-band filter structure comprises a first K-band filter structure 29 and a second K-band filter structure 32, and the Ka-band filter structure comprises a first Ka-band filter structure 30 and a second Ka-band filter structure 31. In the implementation process, in order to obtain a better filtering effect, the non-closed structure manufactured by randomly bending the metal micro-strips connected in parallel or in series is used as the filtering structure, and the metal micro-strips with unequal line widths are preferably selected for the two frequency bands in the manufacturing process, so that the isolation is further improved. When designing, in order to further reduce the size of the whole device and ensure the best isolation, besides the first Ka band filtering structure 30 adopts a series structure, a parallel structure is adopted, the first Ka band filtering structure 30 is arranged on one side of the K band feeding structure 28, which is far away from the V-shaped structure, of the L-shaped structure, the first K band filtering structure 29 and the first Ka band filtering structure 30 are arranged on the fourth metal layer 15 on the same layer and are not in contact with the K band feeding structure 28 and the second Ka band filtering structure, and the specific position relationship refers to fig. 4. The second K-band filter structure 32 is shown in fig. 6 and is disposed on the upper surface of the Ka-band power divider metal layer 19. The second Ka band filter structure 31 is a parallel microstrip line bent arbitrarily, and is disposed on the sixth metal layer 17, as shown in fig. 5.
When the metal patch array structure 13 is used, a one-to-two power divider of the Ka frequency band power divider metal layer 19 is connected with the third metal column 22 to directly contact and feed and generate a circularly polarized radiation mode; the K-band metal patch array structure 12 is characterized in that a cross slot 27 on the metal ground layer 14 is excited by a K-band metal bent microstrip line 28, and energy is coupled into the K-band metal patch array structure 12 through the cross slot 27 and generates a circularly polarized radiation mode. The first K frequency band filtering structure 29 and the second K frequency band filtering structure 32 are respectively etched on the fourth metal stratum 15 and the Ka frequency band power divider metal layer 19, the overall occupied size is only about 0.1 times of wavelength, and after the first K frequency band filtering structure and the second K frequency band filtering structure are connected with the third metal column 22, the different-frequency isolation improvement effect of about 20dB can be achieved. The first Ka frequency band filtering structure 30 and the second Ka frequency band filtering structure 31 are respectively etched on the K frequency band feeding structure 28 and the sixth metal layer 17 and are connected with the second metal column 25, the overall occupied size of the filtering structure is only about 0.3 times of wavelength, the antenna space is not additionally occupied in the transverse direction, and the effect of improving the different-frequency isolation degree of about 20dB is also achieved.
What needs to be explained about the above technical solution is: in the scheme, the filtering structure, the feeding structure and the Ka frequency band one-to-two power divider arranged on the upper surface of the metal stratum keep the same horizontal plane with the metal stratum.
FIG. 7 shows the performance of the different frequency isolation when no K-band filtering is loaded in the range of the K-band (17.7-21.2 GHz), and the isolation is only better than-17 dB when a single high-frequency antenna unit and 6 adjacent different low-frequency antenna units are taken; FIG. 8 shows the performance of the inter-frequency isolation after the K-band filtering is loaded in the range of the K-band (17.7-21.2 GHz), and a single high-frequency antenna unit and 6 adjacent different low-frequency antenna units are also taken, so that the isolation is better than-33 dB in the range of (17.7-21.2 GHz), and better than-40 dB in the range of (19-20.8 GHz), and the improvement effect is 15-25 dB; FIG. 9 shows the performance of the different frequency isolation when Ka band filtering is not loaded in the Ka band (27.5-31 GHz), and the isolation is only better than-15 dB when a single low-frequency antenna unit and 6 adjacent different high-frequency antenna units are taken; fig. 10 shows the performance of the different-frequency isolation after the Ka-band filtering is loaded in the Ka-band (27.5-31 GHz) range, and a single low-frequency antenna unit and 6 adjacent different high-frequency antenna units are taken, so that the isolation is better than-35 dB in the (27.5-31 GHz) range, and better than-40 dB in the (28-31 GHz) range, and the improvement effect is 20-30 dB.
In conclusion, after the technical scheme is adopted, the wider bandwidth is obtained by increasing the number of layers of the multilayer dielectric substrate, and the problems that the filter structure of the conventional K/KA frequency band common-caliber phased-array antenna is difficult to integrate, the isolation between different frequency units is low, and the simultaneous work of transmitting and receiving is difficult to meet are solved on the premise of ensuring the bandwidth.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (6)
1. The utility model provides a planar high isolation K/Ka frequency channel is bore phased array antenna altogether, includes multilayer medium base plate, K frequency channel metal patch array structure, Ka frequency channel metal patch array structure, K frequency channel filter structure and Ka frequency channel filter structure, its characterized in that:
the multilayer dielectric substrate comprises a first metal stratum, a first dielectric layer, a second metal stratum, a third dielectric layer, a fourth dielectric layer, a third metal stratum, a fifth dielectric layer, a fourth metal stratum, a sixth dielectric layer, a seventh dielectric layer, a fifth metal stratum, an eighth dielectric layer, a ninth dielectric layer, a tenth dielectric layer and an eleventh dielectric layer which are sequentially stacked from bottom to top;
the lower surface of the first metal stratum is connected with BGA metal planting balls for realizing telecommunication connection with a subsequent chip multilayer medium substrate, and the upper surface of the first metal stratum is provided with a first metal column and a second metal column; the first metal column is connected with the fifth metal stratum, the fourth metal stratum, the third metal stratum and the second metal stratum; the second metal column is connected with the BGA metal ball planting, the fourth metal stratum, the third metal stratum and the second metal stratum;
a Ka frequency band one-to-two power divider metal layer is arranged between the first dielectric layer and the second dielectric layer; a third metal column is arranged on the upper surface of the Ka frequency band one-to-two power divider metal layer, and a fourth metal column is arranged on the lower surface of the Ka frequency band one-to-two power divider metal layer; connecting the Ka frequency band metal patch array structure through a third metal column for feeding; the fourth metal column is connected with the BGA metal planting balls;
a fifth metal column is arranged on the upper surface of the third metal stratum and connected with a fourth metal stratum through the fifth metal column;
a K frequency band feed structure is arranged on the fourth metal layer; the K frequency band feeding structure realizes K frequency band feeding through a cross slot array structure on a fifth metal stratum;
the cross groove array structure on the fifth metal ground layer is positioned right below the K-frequency-band metal patch array structure, and cross grooves in the cross groove array structure correspond to metal patches in the K-frequency-band metal patch array one by one;
a sixth metal layer is arranged on the upper surface of the third medium layer and connected with the second metal column;
the upper surface of the tenth dielectric layer is provided with a K-frequency-band metal patch array structure, the lower surface of the tenth dielectric layer is provided with a Ka-frequency-band metal patch array structure, and the Ka-frequency-band metal patch array structure is opposite to the K-frequency-band metal patch array structure; each patch of the Ka frequency band metal patch array structure is connected with a metal layer of the Ka frequency band one-to-two power divider through a third metal column, and the projection of the metal patch of the Ka frequency band metal patch array structure on the tenth medium layer is not overlapped with the projection of the metal patch of the K frequency band metal patch array structure on the tenth medium layer;
the K-band filtering structure comprises a first K-band filtering structure and a second K-band filtering structure, the first K-band filtering structure is arranged on any one of a second metal layer, a sixth metal layer, a third metal layer or a fourth metal layer, and the second K-band filtering structure is arranged on a Ka-band one-in-two power divider metal layer; the Ka frequency band filtering structure comprises a first Ka frequency band filtering structure and a second Ka frequency band filtering structure; the first Ka frequency band filtering structure is arranged on the K frequency band feeding structure; the second Ka frequency band filtering structure is arranged on the second metal stratum or the sixth metal layer; when the first K frequency band filtering structure is arranged on the fourth metal stratum, the first K frequency band filtering structure is not in contact with the K frequency band feeding structure and the second Ka frequency band filtering structure.
2. The planar high-isolation K/Ka frequency band common-aperture phased array antenna according to claim 1, wherein: the K-frequency band metal patch array structure is formed by arraying a plurality of metal patch units; when the metal patch units are arranged, a space is arranged between the adjacent metal patch units, and the space is larger than 0; the number of the metal patches of the metal patch unit is 4, the central points of the 4 metal patches are respectively positioned on 4 vertexes of a square, a space larger than 0 is also arranged between every two adjacent metal patches, and the space between every two adjacent metal patches is equal to the space between every two adjacent metal patch units; the structure of the Ka frequency band metal patch array structure is the same as that of the K frequency band metal patch array structure.
3. The planar high-isolation K/Ka frequency band common-aperture phased array antenna according to claim 2, wherein: the projection of the K frequency band metal patch array structure on the tenth dielectric layer and the projection of the Ka frequency band metal patch array structure on the tenth dielectric layer are in the same region, the metal patch unit of the K frequency band metal patch array structure is used as a first metal patch unit, and the metal patch unit of the Ka frequency band metal patch array structure is used as a second metal patch unit; the second metal patch unit is nested in the first metal patch unit, and four vertexes of the second metal patch unit are respectively positioned on the middle points of the 4 sides of the square of the first metal patch unit.
4. The planar high-isolation K/Ka frequency band common-aperture phased array antenna according to claim 3, wherein: the ratio of the space between two adjacent metal patches in the K-band metal patch array structure to the space between two adjacent metal patches in the Ka-band metal patch array structure is
。
5. The planar high-isolation K/Ka frequency band common-aperture phased array antenna according to claim 1, wherein: the K-band filtering structure and the Ka-band filtering structure are non-closed structures and are formed by randomly bending metal microstrip lines connected in parallel or in series, and the line widths of the metal microstrip lines selected by the K-band filtering structure and the Ka-band filtering structure are unequal.
6. The planar high-isolation K/Ka frequency band common-aperture phased array antenna according to claim 1, wherein: the K-frequency band feed structure is a non-closed structure and consists of an L-shaped structure and a V-shaped structure, and the short edge of the L-shaped structure is connected with one edge of the V-shaped structure; the L-shaped structure and the V-shaped structure are both formed by bending metal microstrip lines.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210508578.2A CN114614257B (en) | 2022-05-11 | 2022-05-11 | Planar high-isolation K/Ka frequency band common-caliber phased array antenna |
| US18/164,023 US20230369760A1 (en) | 2022-05-11 | 2023-02-03 | Multi-band, shared-aperture, circularly polarized phased array antenna |
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| CN115173052B (en) * | 2022-08-04 | 2024-01-30 | 中国电子科技集团公司第二十六研究所 | Integrated dual-frequency composite phased array antenna and phased array radar |
| CN117175196B (en) * | 2023-03-16 | 2024-04-12 | 广州程星通信科技有限公司 | Common-caliber antenna array |
| US11831088B1 (en) * | 2023-07-19 | 2023-11-28 | The Florida International University Board Of Trustees | Dual-band antenna systems |
| CN117039433B (en) * | 2023-10-07 | 2023-12-29 | 成都辰星迅联科技有限公司 | Thin film phased array antenna and phased array antenna array based on lead patch |
| CN117154423B (en) * | 2023-10-31 | 2023-12-29 | 成都辰星迅联科技有限公司 | Planar Gao Rongcha millimeter wave phased array antenna |
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