CN114594107A - Optimization method and application of scanning path and detection method of surface of semiconductor material - Google Patents
Optimization method and application of scanning path and detection method of surface of semiconductor material Download PDFInfo
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Abstract
The invention provides an optimization method and application of a scanning path and a detection method of a semiconductor material surface, belonging to the technical field of semiconductor surface detection.A scanning path optimization method establishes an inequality model by taking the scanning quantity and an actual overlapping area as parameters to be optimized according to the limit conditions of a to-be-scanned area, a scanning imaging visual field and the overlapping area as constant parameters; and performing integer solution on the inequality model to obtain the plan of the scanning path with the least number of scanned pictures and the largest overlapping area of two adjacent imaging fields under the same condition. The method does not need to make any hardware change, can effectively save the scanning time of the whole wafer, and reduces the processing quantity and the storage capacity of the imaging view images.
Description
Technical Field
The invention belongs to the technical field of semiconductor material detection, and particularly relates to a scanning path optimization method, application and a semiconductor material surface detection method.
Background
Semiconductor materials are commonly used in semiconductor wafer processing manufacturing processes, and thus, the yield of semiconductor materials has a significant impact on the overall integrated circuit industry. Currently, the main semiconductor material is wafer, and more than 90% of the electronic devices on the market are manufactured on the basis of wafer. Since the surface of the semiconductor material directly affects the processing performance of the device, the surface is not allowed to have any defects; in the industrial production process, a detection system is required to carry out real-time detection, the problem of high detection difficulty exists, and non-contact optical detection is generally adopted in the prior art.
In the process of non-contact optical detection, because the size of the semiconductor material is relatively large, a general optical system cannot directly obtain a complete semiconductor material image and can only obtain an image of a local view field on the premise of considering the minimum detection precision. Therefore, in order to obtain a complete image of the semiconductor material, a scanning photographing technique is generally adopted: and planning a scanning path according to the size of the semiconductor material, carrying out image scanning acquisition by taking a plurality of scanning points as centers, imaging one by one, and finally combining to obtain a complete semiconductor material image. Taking the wafer surface inspection as an example, fig. 1 shows an overall image of the wafer, and a rectangular area in the overall image is a local view image. Meanwhile, because the detection of the wafer has the requirement of real-time performance, the fewer the scanned images, the better. Therefore, the fewer redundant images obtained by scanning are better, on one hand, the scanning time and the image shooting time can be reduced, on the other hand, the data volume of the images is also reduced, and the pressure of hard disk storage and the pressure of subsequent detection algorithms are reduced. Therefore, in the production inspection process, an optimized scan path planning method is urgently needed, which can ensure that each small image in a wafer can be scanned, and can also ensure that the number of scanned images is minimum, so that the scanning time and the subsequent image processing time can be minimum.
In the existing technical scheme, two detection scanning methods are adopted: 1. firstly, planning a scanning path in advance according to the size of the wafer and the calibrated central position. And then in the process of each production detection, the wafer is moved to the calibrated central position through the alignment system to be scanned according to a preset scanning path. 2. Firstly, a positioning camera is used for obtaining the position of a wafer, then the scanning path is planned according to the size and the central position of the wafer, and then scanning is carried out according to the scanning path. Both methods essentially require the generation of a scan path based on a certain wafer size and a previously set overlap region of two adjacent imaging fields of view. The specific method comprises the following steps:
step1 obtaining the location and area of the waferRegion 0 And obtaining the external rectangle of the outer contour edge of the wafer in the horizontal directionRect 0 ；
Step 2: to avoid generating errors in the scanning process, the rectangular area is circumscribedRect 0 Performing external expansion to obtain a rectangular regionRect 1 ；
Step 3: according to the hardware condition of the scanning device, the imaging visual field of each shootingrectAs a unit area, and overlapping areas of adjacent imaging fields of view are setoverlapThereby obtaining an external rectangular areaRect 1 The distribution rectangular region of all imaging fields of view inrect（rect 0 ，rect 1 ，rect 2 ，，，rect N ）；
Step 4: imaging a field of view according to a distributionrect N The region where the wafer is locatedRegion 0 Whether the intersections determine whether to remain.
Thus, the prior art, while considering the number of pictures to be saved as much as possible, does not achieve an optimal imaging field of viewrect N The distribution planning increases the time and the scanning space of scanning imaging, and the detection efficiency is low and is complex.
Disclosure of Invention
In view of the above drawbacks and needs of the prior art, the present invention provides a method for optimizing a scan path, an application of the method, and a method for inspecting a surface of a semiconductor material, which can rapidly plan a scan path of a surface of a semiconductor material, so as to obtain fewer images by scanning and maximize an overlapping area between adjacent imaging fields.
To achieve the above object, according to a first aspect of the present invention, there is provided a scan path optimization method, including:
acquiring an image of a surface to be detected of a sample, determining a circumscribed rectangle of the outline edge of the surface to be detected in the image in the horizontal direction, and expanding the circumscribed rectangle outwards to obtain a region to be scanned of the surface to be detected;
setting the imaging visual field of the scanning device and the size range of the minimum overlapping area between the adjacent imaging visual fields;
establishing an inequality set by taking the size ranges of the region to be scanned, the imaging visual fields and the minimum overlapping region between the adjacent imaging visual fields as constant parameters and taking the imaging number of the imaging visual fields and the size range of the actual overlapping region between the adjacent imaging visual fields as optimization parameters;
obtaining the optimal focusing positions of all imaging visual fields in the current region to be scanned by taking the inequality group as a constraint condition; and extracting an imaging visual field intersected with the surface to be detected, and forming a scanning path according to the optimal focusing position of the imaging visual field.
Further, the setting of the size range of the imaging field of view of the scanning device and the minimum overlapping area between adjacent imaging fields of view includes:
setting a width of the imaging field of view in a first direction and a second direction; and setting widths of the minimum overlapping area in the first direction and the second direction.
Further, the first direction and the second direction are perpendicular to each other and are both horizontal directions.
Further, the establishing of the inequality set by taking the size range of the region to be scanned, the imaging field of view and the minimum overlapping region between the adjacent imaging fields of view as constant parameters and taking the imaging number of the imaging fields of view and the size range of the actual overlapping region between the adjacent imaging fields of view as optimized parameters includes:
establishing a first inequality according to the fact that the width of the actual overlapping area in the first direction or the second direction is larger than or equal to the width of the minimum overlapping area; and establishing a second inequality according to the condition that the sum of the widths of the non-overlapped areas in the imaging visual fields in the first direction or the second direction is greater than or equal to the width of the current area to be scanned.
Further, the obtaining the optimal focusing positions of all imaging fields in the current region to be scanned by using the inequality group as a constraint condition includes:
calculating the imaging quantity of the imaging visual fields in the first direction and the width of the actual overlapping region, and determining the optimal focusing coordinate of each imaging visual field in the first direction; and calculating the imaging number of the imaging fields of view in the second direction and the width of the actual overlapping area, and determining the optimal focusing coordinate of each imaging field of view in the second direction.
Further, the outward expansion width of the circumscribed rectangle in the first direction is set to be 1/20-1/5 of the width of the imaging field of view in the first direction.
Further, the outward expansion width of the circumscribed rectangle in the second direction is set to be 1/20-1/5 of the width of the imaging field of view in the second direction.
According to a second aspect of the present invention, there is provided a system for optimizing a scan path, applying the method as described above, the system comprising: the device comprises an acquisition module, a setting module, an optimization module and a calculation module; the acquisition module is used for acquiring an image of a surface to be measured of a sample, determining a circumscribed rectangle of the outer contour edge of the surface to be measured in the image in the horizontal direction, and expanding the circumscribed rectangle outwards to obtain a region to be scanned of the surface to be measured; the setting module is used for setting the imaging visual field of the scanning device and the size range of the minimum overlapping area between the adjacent imaging visual fields; the optimization module is used for establishing an inequality set by taking the size ranges of the region to be scanned, the imaging visual field and the minimum overlapping region between the adjacent imaging visual fields as constant parameters and taking the imaging number of the imaging visual fields and the size range of the actual overlapping region between the adjacent imaging visual fields as optimization parameters; the calculation module is used for obtaining the optimal focusing positions of all imaging visual fields in the current region to be scanned by taking the inequality group as a constraint condition; and extracting an imaging visual field intersected with the surface to be detected, and forming a scanning path according to the optimal focusing position of the imaging visual field.
According to a third aspect of the present invention, there is provided an electronic device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the steps of the method as described above when executing the computer program.
According to a fourth aspect of the present invention, there is provided a method of inspecting a surface of a semiconductor material, comprising:
providing a semiconductor material sample, and obtaining a local scanning image in a detection area corresponding to the surface to be detected of the sample by applying the optimization method of the scanning path;
fusing and splicing the local scanning images to obtain a panoramic scanning image of the current detection area; and acquiring detection parameters of the surface of the semiconductor material sample based on the panoramic scanning image.
Generally, compared with the prior art, the above technical solution conceived by the present invention has the following beneficial effects:
the invention provides an optimization method and application of a scanning path and a detection method of a semiconductor material surface aiming at the problem of scanning track generation of semiconductor material surface detection. Compared with the existing track generation method, the method can reduce the number of the scanned pictures on one hand, thereby effectively reducing the time for scanning, storing and operating the images; on the other hand, the overlapping area of adjacent imaging visual fields can be increased, so that the calculation processing of the splicing, fusion and positioning of the local scanning images of the wafer is easier, and the derived detection result is more accurate.
Drawings
FIG. 1 is a prior art image of an entire crystal formed by stitching scanned wafer partial images;
FIG. 2 is a flow chart of a method of scan path optimization implemented in accordance with the present invention;
fig. 3 is a layout diagram of an imaging field of view after optimization of a wafer scan path, implemented in accordance with an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
It should be noted that in the functional equations of the present invention, the symbol "+" is an operation symbol representing the multiplication of two constants or vectors before and after, and "/" is an operation symbol representing the division of two constants or vectors before and after, and all the functional equations of the present invention follow the mathematical operation of addition, subtraction, multiplication and division.
It should be noted that the term "first \ second" referred to in the present invention is only used for distinguishing similar objects, and does not represent a specific ordering for the objects, and it should be understood that "first \ second" may be interchanged in a specific order or sequence, if allowed. It should be understood that "first \ second" distinguishing objects may be interchanged under appropriate circumstances such that the embodiments of the invention described herein may be practiced in sequences other than those described or illustrated herein.
The invention provides a scanning path optimization method, application and a semiconductor material surface detection method, and aims to rapidly plan a scanning path of a semiconductor material surface, so that fewer images can be obtained through scanning on one hand, and the largest overlapping area can be formed between adjacent imaging fields on the other hand. Therefore, the scanning quantity in a certain direction is ensured to be as minimum as possible under the condition of the maximum overlapping area, and meanwhile, the splicing between corresponding adjacent imaging fields is easier when the overlapping area is larger. Since the scanning of the semiconductor material surface image is a two-dimensional image scanning, the present invention translates the problem into a scan path optimization in two perpendicular directions. Thus, for a certain one-dimensional direction, an optimized inequality model is established:
wherein the content of the first and second substances,nfor the number of images to be imaged for the field of view,w overlap the width of the actual overlapping area between adjacent imaging visual fields in a certain one-dimensional direction,W overlap the width of the minimum overlapping area between adjacent imaging visual fields in a certain one-dimensional direction,W sub to image the width of the field of view in a certain dimension,Wis the width of the area to be scanned; wherein the content of the first and second substances,n、w overlap for the unknown parameters that need to be optimized,W overlap 、W sub 、Wis a constant parameter that can be set according to actual scanning conditions.
From the above set of inequalities, one can further obtain:
it is known thatnIs a positive integer, so the solution of the above inequality formula can be simplified as:
wherein the functionceil（）Meaning not to follow a rounding offThe function of (1) is added as long as the decimal value is an integermax（）Representing the value of the maximum value.
It is known thatnAndw overlap the arrangement of the imaging field of view in the one-dimensional scanning direction can be easily obtained, so that the scanning track can be obtained. Preferably, the imaging field of viewrect N For a rectangular area, as shown in fig. 2, a method for optimizing a scan path is provided, which includes:
s1: acquiring an image of a surface to be detected of a sample, determining a circumscribed rectangle of the outline edge of the surface to be detected in the image in the horizontal direction, and expanding the circumscribed rectangle outwards to obtain a region to be scanned of the surface to be detected;
s2: setting the imaging visual field of the scanning device and the size range of the minimum overlapping area between the adjacent imaging visual fields;
s3: establishing an inequality set by taking the size ranges of the region to be scanned, the imaging visual fields and the minimum overlapping region between the adjacent imaging visual fields as constant parameters and taking the imaging number of the imaging visual fields and the size range of the actual overlapping region between the adjacent imaging visual fields as optimization parameters;
s4: obtaining the optimal focusing positions of all imaging visual fields in the current region to be scanned by taking the inequality group as a constraint condition; and extracting an imaging visual field intersected with the surface to be detected, and forming a scanning path according to the optimal focusing position of the imaging visual field.
According to the invention, the optimal focusing positions of all imaging visual fields are determined through the first direction and the second direction, so that the first direction and the second direction can be two vertical directions on the same horizontal plane, and a coordinate system is established to determine the optimal focusing coordinate; specifically, the following embodiments take the wafer surface inspection as an example to perform the following description by optimizing the scanning path in the X, Y direction in the horizontal plane of the region where the wafer is located:
the embodiment provides a method for optimizing a scanning path, which is used for detecting the surface of a wafer, and the method comprises the following steps:
s1: obtaining a wafer image to be scannedRegion 0 Determining a circumscribed rectangle of the outer contour edge of the wafer in the image in the horizontal directionRect 0 And the external rectangle is expanded outwards to obtain the area to be scanned of the waferRect 1 （W x ， W y ）；
In the present embodiment, the region to be scanned has a width in both the X direction and the Y directionW x ，W y The X direction and the Y direction can be set as two vertical directions on a two-dimensional horizontal plane of the wafer image; preferably, the X direction and the Y direction are respectively parallel to the length and the width of the area to be scanned; more preferably, since the region to be scanned is a rectangle, as shown in fig. 3, any end point of the rectangle can be used as the origin, so the widths of the region to be scanned in the X direction and the Y directionW x ，W y The length and width of the rectangle are the same as those of the area to be scanned. Region(s)Region 0 The circumscribed rectangle is the circular area in FIG. 3, and the circumscribed rectangle meansRect 0 With a rectangular area tangent to the circular area in figure 3,
preferably, the outward expansion width of the circumscribed rectangle in the X direction is set to be 1/20-1/5 of the width of the imaging visual field in the X direction; the outward expansion width of the circumscribed rectangle in the Y direction is set to be 1/20-1/5 of the width of the imaging visual field in the Y direction. Preferably, as shown in fig. 3, the flared rectangular region is the overall rectangular region in fig. 3.
S2: setting the imaging visual field of the scanning device and the size range of the minimum overlapping area between the adjacent imaging visual fields;
in the present embodiment, the imaging field of view is determined according to the hardware condition of the scanning apparatusrectAnd the imaging field of view corresponds to the width in the X directionW sub-x And width in Y directionW sub-y (ii) a And setting the width of the minimum overlapping area in the X directionW overlap-x And width in Y directionW overlap-y 。
S3: establishing an inequality set by taking the size ranges of the region to be scanned, the imaging view field and the minimum overlapping region between the adjacent imaging view fields as constant parameters and taking the imaging number of the imaging view fields and the size range of the actual overlapping region between the adjacent imaging view fields as optimized parameters;
in this embodiment, a first inequality is established according to the width of the actual overlapping region in the X direction or the Y direction being greater than or equal to the width of the minimum overlapping region; and establishing a second inequality according to the condition that the sum of the widths of the non-overlapped areas in the imaging visual fields in the X direction or the Y direction is greater than or equal to the width of the current area to be scanned.
Specifically, in the X direction, the width of the region to be scanned in the X directionW x Field of view of imagingrectWidth in X directionW sub-x Width of minimum overlapping region between adjacent imaging fields of view in X directionW overlap-x Is a known constant parameter, and the imaging quantity of the imaging field of view in the X directionn xAnd the width of the actual overlapping area between adjacent imaging visual fields in the X directionw overlap-x To optimize the parameters, a set of inequalities is established according to 1.1.
Specifically, in the Y direction, the width of the region to be scanned in the Y directionW y Field of view of imagingrectWidth in Y directionW sub-y Width of minimum overlapping region between adjacent imaging fields in Y directionW overlap-y A known constant parameter, in the number of images of the imaging field of view in the Y directionn yAnd the width of the actual overlapping area between adjacent imaging visual fields in the Y directionw overlap-y To optimize the parameters, a set of inequalities is established according to 1.1.
S4: obtaining the optimal focusing positions of all imaging visual fields in the current region to be scanned by taking the inequality group as a constraint condition; and extracting an imaging field of view intersected with the wafer image, and forming a scanning path according to the optimal focusing position of the imaging field of view.
In the present embodiment, the imaging number of the imaging field of view in the X direction can be calculated according to equation 1.3n xAnd the width of the actual overlapping areaw overlap-x And determining therefrom optimal focus coordinates in the X-direction for each imaging field of view; the imaging number of imaging visual fields in the Y direction can be calculated according to the formula 1.3n yAnd the width of the actual overlapping area
w overlap-y And thus the optimal focus coordinates in the Y direction for each imaged field of view.
As shown in fig. 3, there is an imaging field of view that intersects the waferrect N A reservation is made to form the final scan trajectory. And obtaining the optimal focusing positions of all the imaging fields in the current region to be scanned according to the optimal focusing coordinates of all the imaging fields in the direction X, Y, arranging the imaging fields in the region to be scanned, extracting the imaging fields intersected with the wafer image, and forming a scanning path according to the optimal focusing positions.
The invention provides a wafer detection method based on the above embodiment 1, which includes:
s1': providing a wafer, and obtaining a local scanning image in a detection area corresponding to the surface of the wafer by applying the optimization method of the wafer scanning path in the embodiment 1;
s2': fusing and splicing the local scanning images to obtain a panoramic scanning image of the current detection area; and acquiring detection parameters of the surface of the wafer based on the panoramic scanning image.
Description of the experiments
A 4-inch wafer is provided, and scanning and shooting are performed by using a 25M camera (imaging field of view is 5120 pixels by 5120 pixels) and a 3X lens, wherein the width and the height of the whole wafer are about 80000 pixels respectively. We set the minimum overlap to beW overlap-x Is 140 pixels andW overlap-y 105 pixels. The results of the comparison we have obtained using the prior art are as follows:
table 1 test results obtained using the wafer scan path planning methods described in examples 1-3 and the prior art
| Examples | Prior Art | |
| Number of imaging fields of view (number) scanned | 642 | 780 |
| Width of actual overlap area woverlap-Y (pixels) in Y-direction/each column | 435 | 140 |
| Width of actual overlap area in X direction/each row woverlap-X (pixel) | 140-470 | 105 |
As can be seen from table 1 above, the scanned image formed by the embodiment of the present application is fewer, and the actual overlapping area is larger. Therefore, the optimization method of the wafer scanning path provided by the embodiment is adopted to establish an inequality model by taking the limited conditions of the region to be scanned, the scanning imaging field of view and the overlapping region as constant parameters and taking the scanning number and the actual overlapping region as parameters to be optimized; and performing integer solution on the inequality model to obtain the plan of the scanning path with the least number of scanned pictures and the largest overlapping area of two adjacent imaging fields under the same condition. The method does not need to make any hardware change, can effectively save the scanning time of the whole wafer, and reduces the processing quantity and the storage capacity of the imaging view images.
The present invention provides a system for optimizing a scan path based on the above embodiments, the system comprising: the device comprises an acquisition module, a setting module, an optimization module and a calculation module; the acquisition module is used for acquiring an image of a wafer to be scanned, determining a circumscribed rectangle of the outer contour edge of the wafer in the image in the horizontal direction, and expanding the circumscribed rectangle outwards to obtain an area to be scanned of the wafer; the setting module is used for setting the imaging visual field of the scanning device and the size range of the minimum overlapping area between the adjacent imaging visual fields; the optimization module is used for establishing an inequality set by taking the size ranges of the region to be scanned, the imaging visual field and the minimum overlapping region between the adjacent imaging visual fields as constant parameters and taking the imaging number of the imaging visual fields and the size range of the actual overlapping region between the adjacent imaging visual fields as optimization parameters; the calculation module is used for obtaining the optimal focusing positions of all imaging visual fields in the current region to be scanned by taking the inequality group as a constraint condition; and extracting an imaging field of view intersected with the wafer image, and forming a scanning path according to the optimal focusing position of the imaging field of view.
The present invention provides an electronic device based on the above embodiments, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor, and when the processor executes the computer program, the steps of the method according to the embodiments are implemented.
It should be understood that any process or method descriptions of methods, structures, or steps described herein that are in a block diagram or otherwise may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps in the process, and that the scope of embodiments of the present invention includes additional implementations in which functions may be executed out of order from that shown or discussed, including in substantially the same way or in an opposite order depending on the functionality involved, as would be understood by those reasonably skilled in the art of embodiments of the present invention.
It should be understood that portions of the present invention may be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, the various steps or methods may be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, any one or combination of the following techniques, which are known in the art, may be used: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application specific integrated circuit having an appropriate combinational logic gate circuit, a Programmable Gate Array (PGA), a Field Programmable Gate Array (FPGA), or the like.
It will be understood by those skilled in the art that all or part of the steps carried by the method for implementing the above embodiments may be implemented by hardware related to instructions of a program, which may be stored in a computer readable storage medium, and when the program is executed, the program includes one or a combination of the steps of the method embodiments.
In addition, functional units in the embodiments of the present invention may be integrated into one processing module, or each unit may exist alone physically, or two or more units are integrated into one module. The integrated module can be realized in a hardware mode, and can also be realized in a software functional module mode. The integrated module, if implemented in the form of a software functional module and sold or used as a stand-alone product, may also be stored in a computer readable storage medium.
The storage medium mentioned above may be a read-only memory, a magnetic or optical disk, etc.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made in the above embodiments by those of ordinary skill in the art without departing from the principle and spirit of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. A method for optimizing a scan path, comprising:
acquiring an image of a surface to be detected of a sample, determining a circumscribed rectangle of the outline edge of the surface to be detected in the image in the horizontal direction, and expanding the circumscribed rectangle outwards to obtain a region to be scanned of the surface to be detected;
setting the imaging visual field of the scanning device and the size range of the minimum overlapping area between the adjacent imaging visual fields;
establishing an inequality set by taking the size ranges of the region to be scanned, the imaging visual fields and the minimum overlapping region between the adjacent imaging visual fields as constant parameters and taking the imaging number of the imaging visual fields and the size range of the actual overlapping region between the adjacent imaging visual fields as optimization parameters;
obtaining the optimal focusing positions of all imaging visual fields in the current region to be scanned by taking the inequality group as a constraint condition; and extracting an imaging visual field intersected with the surface to be detected, and forming a scanning path according to the optimal focusing position of the imaging visual field.
2. The method for optimizing a scan path according to claim 1, wherein the setting of the size range of the imaging field of view of the scanning device and the minimum overlapping area between adjacent imaging fields of view comprises:
setting a width of the imaging field of view in a first direction and a second direction; and setting widths of the minimum overlapping area in the first direction and the second direction.
3. The method of claim 2, wherein the first direction and the second direction are perpendicular to each other and are both horizontal directions.
4. The method for optimizing scanning path according to claim 2, wherein the establishing a set of inequalities with the size ranges of the region to be scanned, the imaging field of view, and the minimum overlapping region between adjacent imaging fields of view as constant parameters and with the imaging number of the imaging field of view, and the size range of the actual overlapping region between adjacent imaging fields of view as optimization parameters comprises:
establishing a first inequality according to the fact that the width of the actual overlapping area in the first direction or the second direction is larger than or equal to the width of the minimum overlapping area; and establishing a second inequality according to the condition that the sum of the widths of the non-overlapped areas in the imaging visual fields in the first direction or the second direction is greater than or equal to the width of the current area to be scanned.
5. The method for optimizing the scanning path according to claim 2, wherein the obtaining the optimal focusing positions of all imaging fields of view in the current region to be scanned by using the set of inequalities as a constraint condition includes:
calculating the imaging quantity of the imaging visual fields in the first direction and the width of the actual overlapping region, and determining the optimal focusing coordinate of each imaging visual field in the first direction; and calculating the imaging number of the imaging fields of view in the second direction and the width of the actual overlapping area, and determining the optimal focusing coordinate of each imaging field of view in the second direction.
6. The scan path optimization method of claim 2, wherein the circumscribing rectangle has a flared width in the first direction set to 1/20-1/5 of a width of the imaging field of view in the first direction.
7. The scan path optimization method of claim 2, wherein the circumscribing rectangle has a flared width in the second direction set to 1/20-1/5 of a width of the imaging field of view in the second direction.
8. A scan path optimization system, wherein the method of any one of claims 1 to 7 is applied, comprising: the device comprises an acquisition module, a setting module, an optimization module and a calculation module; the acquisition module is used for acquiring an image of a surface to be measured of a sample, determining a circumscribed rectangle of the outer contour edge of the surface to be measured in the image in the horizontal direction, and expanding the circumscribed rectangle outwards to obtain a region to be scanned of the surface to be measured; the setting module is used for setting the imaging visual field of the scanning device and the size range of the minimum overlapping area between the adjacent imaging visual fields; the optimization module is used for establishing an inequality set by taking the size range of the region to be scanned, the imaging field of view and the minimum overlapping region between the adjacent imaging fields of view as constant parameters and taking the imaging number of the imaging fields of view and the size range of the actual overlapping region between the adjacent imaging fields of view as optimization parameters; the calculation module is used for obtaining the optimal focusing positions of all imaging visual fields in the current region to be scanned by taking the inequality group as a constraint condition; and extracting an imaging visual field intersected with the surface to be detected, and forming a scanning path according to the optimal focusing position of the imaging visual field.
9. An electronic device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, characterized in that the steps of the method according to any of claims 1 to 7 are implemented when the computer program is executed by the processor.
10. A method of inspecting a surface of a semiconductor material, comprising:
providing a semiconductor material sample, and acquiring a local scanning image in a corresponding detection area of a surface to be measured of the sample by applying the method for optimizing the scanning path according to any one of claims 1 to 7;
fusing and splicing the local scanning images to obtain a panoramic scanning image of the current detection area; and acquiring detection parameters of the surface of the semiconductor material sample based on the panoramic scanning image.
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