CN114535038B - Transducer unit, array, preparation method and energy device - Google Patents

Transducer unit, array, preparation method and energy device Download PDF

Info

Publication number
CN114535038B
CN114535038B CN202210192486.8A CN202210192486A CN114535038B CN 114535038 B CN114535038 B CN 114535038B CN 202210192486 A CN202210192486 A CN 202210192486A CN 114535038 B CN114535038 B CN 114535038B
Authority
CN
China
Prior art keywords
transducer
ring
electrode layer
central
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202210192486.8A
Other languages
Chinese (zh)
Other versions
CN114535038A (en
Inventor
周红宇
李加东
苗斌
张玉超
王光华
张士钦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Institute of Nano Tech and Nano Bionics of CAS
Original Assignee
Suzhou Institute of Nano Tech and Nano Bionics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Institute of Nano Tech and Nano Bionics of CAS filed Critical Suzhou Institute of Nano Tech and Nano Bionics of CAS
Priority to CN202210192486.8A priority Critical patent/CN114535038B/en
Publication of CN114535038A publication Critical patent/CN114535038A/en
Application granted granted Critical
Publication of CN114535038B publication Critical patent/CN114535038B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B06GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06BMETHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0607Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)

Abstract

The invention discloses a transducer unit, an array, a preparation method and energy equipment, wherein the transducer unit comprises a substrate structure and a vibration structure, and the vibration structure comprises a center structure; the ring structure is provided with a gap in a closed manner along the circumferential direction, the gap penetrates through the main body of the ring structure in the direction perpendicular to the circumferential direction, the central structure is arranged in the gap of the ring structure, and a gap is formed between the central structure and the ring structure; and a first connection structure connecting the central structure and the ring structure; the central structure and the ring structure are both of a multi-layer structure, the central structure and the ring structure are sequentially provided with at least a second electrode layer, a piezoelectric layer and a first electrode layer along the direction deviating from the base structure, and the area of the first electrode layer in the central structure is not larger than that of the piezoelectric layer. The invention effectively improves the performances of sensitivity, propagation distance, output and the like by optimizing the vibrating film structure of the transducer.

Description

Transducer unit, array, preparation method and energy device
Technical Field
The present invention relates to microelectronic system technology, and is especially one kind of transducer unit, array, preparation process and energy apparatus.
Background
The piezoelectric ultrasonic transducer can realize the mutual conversion of electric energy and mechanical energy, and further realize the ultrasonic wave transmitting and receiving functions. The traditional ultrasonic transducer mostly adopts a mechanical processing mode, but the transducer has larger volume, higher power consumption and difficult integration. The micro electromechanical ultrasonic transducer is divided into a piezoelectric type ultrasonic transducer and a capacitive type ultrasonic transducer, the capacitive type ultrasonic transducer needs direct current bias voltage to work, the sound velocity of the traditional piezoelectric type ultrasonic transducer adopting materials for parasitic capacitance is low, the whole acoustic sensitivity of the mechanism is low, the impedance and the impedance value of a transmission medium are large in difference, and the emission efficiency of the transducer is low. The micro-electromechanical piezoelectric ultrasonic transducer has excellent stability, higher sensitivity, small volume and easy integration. The method is applied to the fields of ranging, obstacle recognition, space perception, medical imaging and the like.
The traditional piezoelectric ultrasonic transducers are mostly capacitive ultrasonic transducers, and direct-current bias voltage is needed to improve sensitivity. Ultrasonic transducers using piezoelectric ceramics as piezoelectric materials are not easy to integrate due to large volume and high power consumption. The resonant frequency of the micro-electromechanical ultrasonic transducer is determined by the area of the vibrating membrane, the smaller the area is, the higher the resonant frequency is, the faster the attenuation is, and when the area of the vibrating membrane is smaller, the vibrating displacement of the membrane is smaller, so that the output sound pressure is low. In the prior art, when the area of the vibrating membrane is small, it is difficult to manufacture a piezoelectric ultrasonic transducer with low resonant frequency, high output sound pressure and good sensitivity.
The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person of ordinary skill in the art.
Disclosure of Invention
The invention aims to provide a transducer unit, an array, a preparation method and energy equipment, and aims to solve the problem that a micro-electromechanical ultrasonic transducer in the prior art is limited by small area of a vibrating membrane, so that the structure of the vibrating membrane is improved, and the performance of the transducer is effectively improved.
To achieve the above object, an embodiment of the present invention provides a transducer unit including a base structure, a vibrating structure (the vibrating structure as a whole meets the requirement of stress balance), the vibrating structure including: a central structure; the ring structure is provided with a gap in a closed manner along the circumferential direction, the gap penetrates through the main body of the ring structure in the direction perpendicular to the circumferential direction, the central structure is arranged in the gap of the ring structure, and a gap is formed between the central structure and the ring structure; a first connection structure connecting the central structure and the ring structure (the first connection structure can achieve the purposes of electric connection, structural balance, etc.); the central structure and the ring structure are of a multi-layer structure, the central structure and the ring structure are sequentially provided with at least a second electrode layer, a piezoelectric layer and a first electrode layer along the direction deviating from the base structure, and the area of the first electrode layer in the central structure is not larger than that of the piezoelectric layer.
In one or more embodiments of the invention, a transducer unit includes a base structure, a vibrating structure, the vibrating structure including: a central structure; the ring structure is arranged around the outer side of the central structure and is spaced from the central structure by a certain distance so as to realize a concentric structure, namely the ring structure is a symmetrical ring, and the ring structure and the central structure have a common center; a first connection structure connecting the central structure and the ring structure; the central structure and the ring structure are of a multi-layer structure, the central structure and the ring structure are sequentially provided with at least a second electrode layer, a piezoelectric layer and a first electrode layer along the direction deviating from the base structure, and the area of the first electrode layer in the central structure is not larger than that of the piezoelectric layer.
In one or more embodiments of the present invention, the first connection structure at least satisfies the connection between the center structure and the ring structure, and may have a multi-layered structure as well, that is, a two-layered electrical connection structure and an isolation structure between the two-layered electrical connection structures may be formed as well corresponding to the second electrode layer, the piezoelectric layer, and the second electrode layer three-layered structure; preferably, a multilayer structure of the same material may be used for the second electrode layer, the piezoelectric layer, and the second electrode layer.
In one or more embodiments of the invention, in the central structure: the radius of the first electrode layer is 0.55-0.70 times of the radius of the piezoelectric layer. Preferably, in the central structure: the radius of the first electrode layer is 0.66 times of the radius of the piezoelectric layer, so that the electromechanical coupling effect is optimal, the vibration displacement is maximum, and the output sound pressure is maximum.
In one or more embodiments of the present invention, in order to satisfy the transmission of an electrical signal or current, etc., the transducer unit may further include an electrode lead structure to enable the exchange of an electrical signal with the second electrode layer, the first electrode layer, etc., thereby satisfying the input/output of a detection signal, a switching current, an operating current, etc.
In one or more embodiments of the invention, the outer circumference of the central structure and/or the outer circumference of the ring structure is circular or polygonal. Polygons include, but are not limited to, polygons with sides that are line segments, and polygons with sides that are curved. The polygons of the line segments include, but are not limited to, triangles, squares, and the like. The sides of the polygon with the sides being curves can be circular arcs or wavy lines.
In one or more embodiments of the invention, the central structure and the ring structure are arranged concentrically (may be concentric, etc.) to meet the stress balancing requirements.
In one or more embodiments of the present invention, the ring structure includes a plurality of ring unit structures, and at least a portion of the plurality of ring unit structures have gaps therebetween.
In one or more embodiments of the invention, the multi-layer structure of the central structure and the ring structure in the transducer unit may further comprise a support structure formed on the base structure, which may be formed with the central support structure and the ring support structure, respectively. The combination of the shape of the central support structure and the ring support structure may be adapted to the shape of the central structure of the second electrode layer and the ring structure. The support structure may be in the form of an underlying film.
In one or more embodiments of the invention, a transducer array comprises a plurality of transducer units as described above and a plurality of second connection structures, the second connection structures being electrically between two transducer units.
In one or more embodiments of the present invention, each of the second connection structures electrically connects two adjacent transducer units.
In one or more embodiments of the invention, the plurality of transducer elements are arranged at least partially in an ordered array.
In one or more embodiments of the present invention, in order to satisfy the transmission of an electrical signal or current, etc., the transducer array may further include a number of electrode lead structures to enable the exchange of an electrical signal with the second electrode layer and the first electrode layer, etc., which may be regarded as a unitary array structure, so as to satisfy the input/output of a detection signal, a switching current, an operating current, etc.
In one or more embodiments of the invention, a method of manufacturing, at least including the preparation of a transducer unit, includes the steps of: preparing a substrate; sequentially growing a multilayer structure on a substrate, wherein the multilayer structure comprises a second electrode layer, a piezoelectric layer or sequentially growing the second electrode layer, the piezoelectric layer and the first electrode layer; sequentially etching the multilayer structure from the substrate-facing side to form a cooperatively disposed center structure and ring structure; when the multilayer structure does not have the first electrode layer, continuing to form the first electrode layer; on the side remote from the multilayer structure, the substrate is etched to expose the multilayer structure.
In one or more embodiments of the invention, the energy device comprises a transducer unit as described above or a transducer array as described above. Including but not limited to sensors, sonar, power devices, radar, imaging devices, etc., devices that convert mechanical and electromagnetic energy into a core.
Compared with the prior art, the transducer unit, the array, the preparation method and the energy equipment according to the embodiment of the invention adopt the hollowed-out vibration structure design in a targeted manner, and also propose the array structure design matched with the hollowed-out structure design, thereby effectively overcoming the defects of the prior art and realizing the piezoelectric ultrasonic transducer with lower resonant frequency, higher output sound pressure and good sensitivity. In the same unit or array may be implemented: with smaller radius of the vibrating film, lower resonant frequency can be realized, and longer transmission distance can be achieved; higher vibration displacement can be realized, and better sensitivity and higher sound pressure output are realized. The invention optimizes the performance of the transducer and can be at least embodied in parts of resonant frequency, propagation performance, sensitivity, output capacity and the like. The center point of the membrane has larger displacement under the vibration state, so that higher sound pressure is generated; lower resonant frequency at the same radius, and easy to propagate ultrasonic wave further.
Drawings
FIG. 1 is a schematic diagram of a transducer unit according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view in the A-A direction of the embodiment of FIG. 1 in accordance with the present invention;
FIG. 3 is a schematic diagram of a transducer unit according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of two possible configurations of a transducer unit according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of the structure of a transducer array according to an embodiment of the present invention;
fig. 6 is a schematic view of the displacement of the center point of the vibrating structure of the transducer unit according to an embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the invention is, therefore, to be taken in conjunction with the accompanying drawings, and it is to be understood that the scope of the invention is not limited to the specific embodiments.
Throughout the specification and claims, unless explicitly stated otherwise, the term "comprise" or variations thereof such as "comprises" or "comprising", etc. will be understood to include the stated element or component without excluding other elements or components.
As shown in fig. 1 to 6, in the transducer scheme according to the preferred embodiment of the present invention, the transducer unit and the transducer array formed by the same can provide an improved small-sized vibrating membrane structure, thereby overcoming the problems of high frequency, low output sound pressure and insufficient sensitivity caused by the small-sized vibrating membrane in the prior art. The vibration structure mainly achieves the aim in the invention, and consists of a ring structure (including but not limited to an annular film shape with symmetry and the like) and a central structure (including but not limited to a central circular shape and the like), wherein the central structure is cooperatively arranged in a gap of the ring structure, is surrounded and limited by the ring structure when being observed perpendicular to an extension surface, has no direct connection therebetween, and is also a main structure for transmitting ultrasonic waves. The central structure and the ring structure may be electrically connected directly by additional structures present between the two, such as a first connection structure or the like.
In keeping with the prior art, the transducer unit or transducer array, etc., of the present invention likewise comprises a base structure for carrying a supporting vibrating structure (which may be a vibrating membrane) and an electrode lead structure for electrically connecting with the vibrating structure for purposes of signal transmission and current transport, etc., as is typical in the prior art, the electrode lead structure is electrically connected to the second electrode layer and the first electrode layer of the vibrating structure. In order to embody the difference between the present invention and the prior art, the improved vibration structure mainly comprises an outer ring structure of the vibration structure and a center structure of an inner layer limited in a gap of the ring structure. Since the central structure is defined in the central void of the ring structure, there is no direct structural association between the ring structure and the central structure. Of course, in order to meet the connection definition between the ring structure and the central structure, a first connection structure is formed between the two, so that a functional vibration unit is formed.
As an embodiment, fig. 1 shows a top view of a possible transducer unit according to the invention, fig. 1 shows a situation in which the central structure of the vibrating structure is circular in a direction perpendicular to the viewing angle of the paper, the ring structure of the corresponding single layer is likewise circular, the central position of the circular ring structure forms a void for defining the central structure, the void is likewise circular in the same viewing angle, and it is sufficient that there is no direct connection between the ring structure and the central structure. To satisfy the balance between the two and the information transmission, the first connection structure connects the center structure and the ring structure.
Fig. 2 is a cross-sectional view taken along A-A of fig. 1. The transducer unit may be composed of a base structure, a vibrating structure formed on the base structure, an electrode lead region, and the like. Wherein the vibration structure includes an annular membrane 20 having a void, and the annular membrane 20 may be one of a ring structure having a void formed at a central position; a central circular membrane 10 located in the void, the central circular membrane 10 being one of the central structures; the membrane beam, membrane Liang Jidi, which connects the ring structure and the center structure, is one of the connection structures that connects between the outer periphery of the center circular membrane 10 and the inner periphery of the annular membrane 20 as in fig. 1. The electrode lead regions are introduced by the film body portion, which is shown in fig. 1 as possibly having an outer periphery of the annular film 20, forming a first electrode 61 connected to the first electrode layer and a second electrode 41 connected to the second electrode layer. The membrane beam plays a role in balancing stress, supporting linkage, balance and the like of the vibration structure, and connects all parts of the vibration structure into a whole, and also provides voltage for the main vibration part or is used for feedback signals. The base structure may provide support for the overall film structure.
As an embodiment, the ring structure and the central structure have a multi-layer structure, and may include the second electrode layer 06, the piezoelectric layer 05 and the first electrode layer 04, where a hollowed-out structure is correspondingly implemented on the second electrode layer 06, the piezoelectric layer 05 and the first electrode layer/lower electrode 04, where the hollowed-out structure may be a combination of missing parts of each layer observed by an observer in fig. 1, and in fig. 1, may be a combination of 4-segment arc structures, where the hollowed-out structure meets an isolation requirement between the central structure or the ring structure or the multi-layer ring unit structure forming the ring structure. Correspondingly, a layer connection structure satisfying the communication isolation space may be formed between the hollow structures of the second electrode layer/upper electrode 06, the piezoelectric layer, and the first electrode layer/lower electrode 04 (between the ring structure and the center structure of each layer). Preferably, the material of the connection structure of each layer is the same as that of the corresponding second electrode layer/upper electrode 06, piezoelectric layer and first electrode layer/lower electrode 04.
As an embodiment, it is further defined that in the central structure: the area of the first electrode layer/lower electrode 04 is not larger than the area of the piezoelectric layer. Taking the case shown in fig. 1 as an example, the area here refers to the projected area of the first electrode layer/lower electrode 04 and the piezoelectric layer in the paper surface direction from the viewpoint of the observer. Preferably, in the central structure: the radius of the first electrode layer/lower electrode 04 is 0.55-0.70 times the radius of the piezoelectric layer. Further preferably, in the central structure: the radius of the first electrode layer/lower electrode 04 is about 0.66 times that of the piezoelectric layer, and the structure can enable the vibrating film to have a better vibration mode, and the coupling between the electrode size and the first axisymmetric vibration mode is maximum.
As an embodiment, the shape of the central structure may be selected from a wide variety, and the ring structure may be a circular ring, a rectangular ring, or other polygonal ring, as shown in fig. 1 and 3.
As an embodiment, the shape of the central structure may be similar to the shape of the ring structure, such as a combination of a circular central structure and a circular ring structure; the shape of the central structure can be different from that of the ring structure, such as a combination of a round central structure and a square ring structure.
As an embodiment, as shown in fig. 1 and 3, the ring structure may be composed of a single ring; as shown in a and B of fig. 4, the ring structure may be composed of a plurality of rings, and the ring structure has a structure in which a plurality of unit rings are combined with each other. In fig. 3, the case where the center structure of the vibration structure is rectangular and the ring structure of the corresponding single layer is also rectangular is shown; the design of fig. 4 a shows a ring structure of two layers of rings (with a first outer ring 21, a second outer ring 22); the design B in fig. 4 shows a ring structure of three layers of rings (with a first outer ring 21, a second outer ring 22, a third outer ring 23). The remaining 3 outlets 81 shown in the figures may not be present, as in the case of the 3 schemes operating independently.
Preferably, in the case where the plurality of unit rings are combined with each other, geometric centers of the plurality of rings may coincide; of course, other situations can be selected, and the gravity center of the structure obtained by combining a plurality of unit rings is coincident with the geometric center (balance is realized). Of course, in the combination of the plurality of unit rings, each unit ring may be of the same type, such as a circular ring or a square ring; of course, different types of combinations may be selected for each cell ring, such as a combination of circular rings and square rings.
In one embodiment, in the transducer unit, a support structure (support layer) for supporting the vibration structure is formed on a surface of the base structure adjacent to the vibration structure with reference to the center structure and the ring structure, and the center support structure and the ring support structure are formed in a hollowed-out shape of the center portion and the outer ring structure, respectively. The shape of the center support structure and the shape of the ring support structure may be adapted to the shape and the combination of the second electrode layer/the upper electrode 06, for example, when the second electrode layer/the upper electrode 06 has a center circular structure and an outer single-layer circular ring structure, the center support structure may be formed into a circular structure and the ring support structure in a matched manner, and the ring support structure may be formed into a single-layer circular ring structure.
Of course, when the transducer unit is independently present, the remaining 3 lead-out portions 81 shown in fig. 1 may not be present, except for the lead-out portions from which the first electrode 61 and the second electrode 41 are led out.
As shown in fig. 6, the inventive scheme is more displaced and outputs a greater sound pressure than the conventional vibration structure (about 1.7 μm). That is, the present invention has no doubt larger vibration displacement and thus larger output sound pressure and transmission distance than the transducers of the multi-piezoelectric layer, closed cavity structure, etc. of the prior art.
Further, as shown in fig. 5, a plurality of transducer units including but not limited to those described above may be combined to obtain a transducer array, where the plurality of transducer units are integrally connected to each other by a second connection structure. The connection may be made by interconnecting two adjacent transducer elements or by interconnecting non-adjacent transducer elements as desired. The combination increases the actual effective area of the vibrating membrane, and can play a role in further adjusting the resonance frequency, the output sound pressure, the transmission distance, the sensitivity and other performances of the transducer according to the requirements.
When an array is composed of a plurality of transducer elements, an array having repeatable elements may be employed. As in the case of the 3*3 array shown in fig. 5, the electrode lead areas may be lead from one of the cells (a possible lead from a transducer cell in the lower mid-position is shown in fig. 5). The remaining lead-out portions 81 of each transducer unit can realize the integral connection of the array structure More importantly, the stress distribution inside the piezoelectric layer material in each part of the structure is symmetrical. In fig. 5, a situation is shown in which there is an extraction 81 between two adjacent transducer units.
At the same time, the individual transducer elements of a transducer array may be replaced with one another, since the individual elements of a transducer array may be replaced as desired. Or may be a non-fully repeatable replacement, as in fig. 5, a particular transducer element 100 (the transducer element being positioned in the second row and the second column in the figure) in the transducer array of the 3*3 array may be selectively replaced to include, but is not limited to, the other cases of fig. 3-4. At this point, the remaining 8 cells of the array are repeatable replacement cells, while the particular transducer cell 100 is not repeatable replacement with the rest. Of course, this non-repeatable replacement may be embodied in terms of dimensions, etc., in addition to the shapes previously described. This situation may occur at any location of any array.
As an embodiment, the combination arrangement mode of the plurality of transducer units may be an array mode such as a rectangular factorial array, a circular array or a staggered array (which means that two or more adjacent rows in the rectangular factorial array are alternately arranged to form a repeated structure, and a plurality of repeated structures are repeatedly arranged), or may be an array mode in which no repeatable units exist in the combination.
As an embodiment, multiple transducer units in the same transducer array may be of the same type, i.e. repeatedly combined by the same transducer unit. Of course, multiple transducer elements in the same transducer array may be of different types and combined by different transducer elements, such as by combining transducer elements of different sizes or shapes.
As an embodiment, to satisfy the transmission of signals including electrical signals, currents, etc. of the transducer array, one or more sets of electrode lead structures may be matingly connected on the transducer array corresponding to the second electrode layer/upper electrode 06 and the first electrode layer/lower electrode 04, each set of electrode lead structures including a first pin electrically connected to the first electrode layer/lower electrode 04, respectively, and a second pin electrically connected to the second electrode layer/upper electrode 06, respectively. The arrangement of the electrode lead wires can be comprehensively considered according to the factors of the scale, load, response speed, precision and the like of the array.
As an embodiment, the material of the piezoelectric layer 05 may be adaptively adjusted according to the product, for example, may be selected from aluminum nitride, zinc oxide, lead zirconate titanate piezoelectric ceramics, and the like. Of course, the piezoelectric layer herein may be composed of a single material, such as an aluminum nitride piezoelectric layer, a zinc oxide piezoelectric layer, or the like; the piezoelectric layer may also be a mixed material layer, for example, the mass ratio is 6:4, and certainly, the mixture composition is not limited to the combination of the aluminum nitride and the zinc oxide, but can be more combinations, and the matching proportion of each combination can also depend on the requirements of actual products; the piezoelectric layer may also be a composite material layer, such as a multi-layer composite layer formed by combining an aluminum nitride piezoelectric layer, a zinc oxide piezoelectric layer and a lead zirconate titanate piezoelectric ceramic layer, and of course, may also be other types of composite material layers, where at least one piezoelectric material layer is included in the composite material layer. It should be noted that the layers herein include, but are not limited to, continuous planar layer structures, but may also include web structures, discontinuous layer structures where electrical connections exist between each other, and the like. As one possible embodiment as shown in fig. 2, the material of the base layer 01 may be semiconductor silicon; the material of the oxide layer 02 may be silicon oxide; the 03 material of the supporting layer can be silicon; the 04 material of the second electrode layer/lower electrode may be metallic molybdenum; the 05 material of the piezoelectric layer can be scandium-doped aluminum nitride; the material of the first electrode layer/upper electrode 06 may be gold.
As an embodiment, the electrode materials of the first electrode layer/lower electrode 04 and the second electrode layer/upper electrode 06 may be adaptively adjusted according to products, for example, may be selected from conductive metals such as gold, platinum, aluminum, or tin. At this time, the materials of the first electrode layer/lower electrode 04 and the second electrode layer/upper electrode 06 may be the same or different to meet the design requirement of the product.
In the possible solutions including but not limited to the above, whether the transducer unit or the transducer array, the selection of the combination, the size, the material selection, etc. for each design may depend on the product and the requirements of the product design and the application, etc. without exceeding the protection scope of the present invention.
As an embodiment, in the possible solutions including but not limited to those presented above, the preparation of either the transducer unit or the transducer array may be carried out with reference to the following solutions:
the preparation method can be mainly embodied in the preparation of the transducer units, and the preparation of the transducer array with the same structure can be realized by using different photoetching templates for one-step molding or combining a plurality of molded transducer units to obtain the transducer array with the same structure:
selecting an SOI silicon wafer, thinning and polishing to reach the required thickness;
sequentially growing a lower electrode and a piezoelectric layer by a magnetron sputtering method;
etching the piezoelectric layer by photoetching and dry method to obtain a required pattern and expose the lower electrode;
dry etching the lower electrode;
etching silicon and silicon dioxide of the SOI silicon wafer;
magnetron sputtering an upper electrode;
and etching the back of the silicon wafer by a deep reactive ion etching method to release the film, so that a resonant cavity structure can be formed.
The preparation method can be mainly embodied in the preparation of the transducer units, and the preparation of the transducer array with the same structure can be realized by using different photoetching templates for one-step molding or combining a plurality of molded transducer units to obtain the transducer array with the same structure:
selecting an SOI silicon wafer, thinning and polishing to reach the required thickness;
sequentially growing a lower electrode, a piezoelectric layer and an upper electrode by a magnetron sputtering method;
the electrode is etched by photoetching and dry method to obtain a required pattern and expose the piezoelectric layer;
etching the piezoelectric layer and the lower electrode sequentially by a dry method;
etching silicon and silicon dioxide of the SOI silicon wafer;
and etching the back of the silicon wafer by a deep reactive ion etching method to release the film, so that a resonant cavity structure can be formed.
Photolithography, dry method, magnetron sputtering, deep reactive ion etching, etc. including but not limited to the etching performed in the above steps may employ the prior art depending on factors such as the product and process to be produced.
The foregoing descriptions of specific exemplary embodiments of the present invention are presented for purposes of illustration and description. It is not intended to limit the invention to the precise form disclosed, and obviously many modifications and variations are possible in light of the above teaching. The exemplary embodiments were chosen and described in order to explain the specific principles of the invention and its practical application to thereby enable one skilled in the art to make and utilize the invention in various exemplary embodiments and with various modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the claims and their equivalents.

Claims (9)

1. A transducer unit comprising at least a base structure, a vibrating structure arranged in the base structure, characterized in that the vibrating structure comprises:
a center structure in which the radius of the first electrode layer is 0.55 to 0.70 times the radius of the piezoelectric layer; and
the ring structure is provided with a gap in a circumferential sealing manner, the gap penetrates through the main body of the ring structure in a direction perpendicular to the circumferential direction, the center structure is arranged in the gap of the ring structure, and a gap is formed between the center structure and the ring structure; and
a first connection structure connecting the central structure and the ring structure;
the central structure and the ring structure are of a multi-layer structure, the central structure and the ring structure are sequentially provided with at least a second electrode layer, a piezoelectric layer and a first electrode layer along the direction deviating from the base structure, and the area of the first electrode layer in the central structure is not larger than that of the piezoelectric layer;
the base structure is formed with a hollowed-out pattern corresponding to the central structure and the ring structure.
2. The transducer unit of claim 1, wherein the central structure and the ring structure are concentrically arranged.
3. The transducer unit according to claim 1 or 2, wherein the ring structure comprises a plurality of ring unit structures, and wherein at least part of the ring unit structures have gaps therebetween.
4. A transducer array comprising a plurality of transducer units according to any of claims 1-3 and a plurality of second connection structures electrically associated with the transducer units.
5. The transducer array of claim 4, wherein each of the second connection structures electrically connects adjacent two of the transducer units.
6. The transducer array of claim 4, wherein a plurality of the transducer elements are arranged at least partially in an ordered array.
7. The transducer array of any of claims 4-6, wherein the transducer array further comprises an electrode lead structure electrically connected to the transducer cell.
8. A method of manufacturing a transducer unit according to any of claims 1-3 or a transducer array according to any of claims 4-7, comprising the steps of:
preparing a substrate;
sequentially growing a multilayer structure on a substrate, wherein the multilayer structure comprises a second electrode layer, a piezoelectric layer or sequentially growing the second electrode layer, the piezoelectric layer and the first electrode layer;
sequentially etching the multilayer structure from the substrate-facing side to form a cooperatively disposed center structure and ring structure; when the multilayer structure does not have the first electrode layer, continuing to form the first electrode layer;
on the side remote from the multilayer structure, the substrate is etched to expose the multilayer structure.
9. An energy device comprising a transducer unit according to any of claims 1-3 or a transducer array according to any of claims 4-7.
CN202210192486.8A 2022-02-28 2022-02-28 Transducer unit, array, preparation method and energy device Active CN114535038B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210192486.8A CN114535038B (en) 2022-02-28 2022-02-28 Transducer unit, array, preparation method and energy device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210192486.8A CN114535038B (en) 2022-02-28 2022-02-28 Transducer unit, array, preparation method and energy device

Publications (2)

Publication Number Publication Date
CN114535038A CN114535038A (en) 2022-05-27
CN114535038B true CN114535038B (en) 2023-07-07

Family

ID=81661617

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210192486.8A Active CN114535038B (en) 2022-02-28 2022-02-28 Transducer unit, array, preparation method and energy device

Country Status (1)

Country Link
CN (1) CN114535038B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118023099A (en) * 2022-11-03 2024-05-14 广州乐仪投资有限公司 PMUT structure with thinned portion, manufacturing method thereof and electronic device comprising PMUT structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110560348B (en) * 2019-08-14 2021-01-15 武汉大学 MEMS piezoelectric ultrasonic transducer with hole array Helmholtz resonant cavity
CN111050256A (en) * 2019-12-17 2020-04-21 武汉大学 Miniaturized high-sensitivity piezoelectric microphone
CN112871614B (en) * 2021-01-12 2022-03-15 武汉大学 MEMS ultrasonic transducer with high emission performance
CN113037245B (en) * 2021-03-11 2023-02-03 天津大学 Quartz resonator based on piezoelectric thin film transduction and electronic equipment
CN114345675A (en) * 2022-01-11 2022-04-15 中国科学院苏州纳米技术与纳米仿生研究所 Transduction structure, transducer, preparation method and equipment

Also Published As

Publication number Publication date
CN114535038A (en) 2022-05-27

Similar Documents

Publication Publication Date Title
US11711067B2 (en) Micromachined ultrasound transducer using multiple piezoelectric materials
US6271620B1 (en) Acoustic transducer and method of making the same
US7612635B2 (en) MEMS acoustic filter and fabrication of the same
US8004373B2 (en) MEMS ultrasonic device having a PZT and cMUT
US7489593B2 (en) Electrostatic membranes for sensors, ultrasonic transducers incorporating such membranes, and manufacturing methods therefor
JP5128470B2 (en) Microelectromechanical transducer with insulation extension
US6996883B2 (en) Method of manufacturing a multi-piezoelectric layer ultrasonic transducer for medical imaging
US8456958B2 (en) Capacitive micro-machined ultrasonic transducer for element transducer apertures
JP4981223B2 (en) Microfabricated transducer formed on other circuit components on integrated circuit chip and method of manufacturing the same
US7581295B2 (en) Piezoelectric element and method of manufacturing the same
WO2009004558A2 (en) Thin film detector for presence detection
JP2002528887A (en) Piezoelectric transducer
CN114535038B (en) Transducer unit, array, preparation method and energy device
WO2021135014A1 (en) Piezoelectric single crystal structure and electronic device comprising same
CN114486014A (en) Ultrasonic transducer unit and array combining PMUT and MEMS pressure sensor and manufacturing method
JP6267787B2 (en) Ultrasonic transducer, method for manufacturing the same, and ultrasonic inspection apparatus
WO2009001157A1 (en) A capacitive micro-machined ultrasonic transducer for element transducer apertures
CN114890372B (en) Design and preparation method of PMUT with isolation groove
CN111740204B (en) Cavity resonance suppression structure and application
US20220280971A1 (en) Ultrasound transducer manufacturing method
CN115889153A (en) Multi-electrode driven high-order mode piezoelectric micro-mechanical ultrasonic transducer and application
JP2023527436A (en) Ultrasound imaging device with row and column addressing
CN117040467A (en) Bulk acoustic wave filter based on micro-support structure and preparation method thereof
JP2022091026A (en) Sound wave speaker
CN117548319A (en) Micromechanical ultrasonic transducer structure with double PMUTs on bearing layer and manufacturing method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant