CN114300943A - Electro-absorption active modulation spontaneous pulse type photon cascade semiconductor laser and preparation method thereof - Google Patents
Electro-absorption active modulation spontaneous pulse type photon cascade semiconductor laser and preparation method thereof Download PDFInfo
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Abstract
The invention discloses an electro-absorption active modulation spontaneous pulse type photon cascade semiconductor laser and a preparation method thereof.A pumping source VCSEL semiconductor laser epitaxial structure doped with lanthanide rare earth elements and a first reflecting layer are sequentially formed on one side of a substrate; and an electric absorption modulation structure and a second reflecting layer are sequentially formed on the other side of the substrate. According to the invention, a pumping source VCSEL is utilized to output a certain wavelength specific laser for pumping, the number of particles of rare earth particles in a lanthanide rare earth element doped layer doped below an active region of the VCSEL is reversed, photoluminescence is performed, photon cascade is formed, and new wavelength light generated by the photon cascade oscillates in a second wavelength resonant cavity and is actively modulated by an electric absorption modulation structure.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to an electro-absorption active modulation spontaneous pulse type photon cascade semiconductor laser and a preparation method thereof.
Background
Mode locking is one of the most common techniques for obtaining ultrashort pulse lasers, and lasers with repetition rates of several gigahertz are key components for many applications, such as high-capacity communication systems, photonic switching devices, optical interconnects, and clock distribution.
The traditional vertical cavity surface semiconductor laser is difficult to realize high peak power pulse output, and in order to obtain the high peak power pulse output photon cascade laser, on-chip modulation is carried out in an active and passive modulation mode, and an electric absorption modulation structure can be adopted in the active modulation mode.
The epitaxial structure of the electro-absorption modulator is the basis of the modulator and will directly affect the extinction ratio, while the optical waveguide structure mainly affects the insertion loss, its static loss (including material loss, waveguide transmission loss and fiber-to-waveguide coupling loss) is required to be as low as possible, and its optical spot has as large an overlap as possible with the effective modulation region (MQW region).
Disclosure of Invention
Aiming at the problems in the prior art, the invention designs the epitaxial structure and the optical waveguide layer of the electronic modulator on the photonic cascade chip from the single-chip integration angle, thereby providing the electroabsorption actively modulated spontaneous pulse type photonic cascade semiconductor laser and the preparation method thereof.
The invention discloses an electro-absorption active modulation spontaneous pulse type photon cascade semiconductor laser, which comprises: a substrate;
a pumping source VCSEL semiconductor laser epitaxial structure doped with lanthanide rare earth elements and a first reflecting layer are sequentially formed on one side of the substrate, and the pumping source VCSEL semiconductor laser epitaxial structure sequentially comprises an N-type total reflection DBR layer, a rare earth element doping layer, an N-type waveguide layer, an active region, a P-type waveguide layer, an oxidation limiting layer and a P-type total reflection DBR layer from the side of the substrate to the side of the first reflecting layer;
an electric absorption modulation structure and a second reflecting layer are sequentially formed on the other side of the substrate;
wherein the content of the first and second substances,
the N-type total reflection DBR layer, the N-type waveguide layer, the active region, the P-type waveguide layer and the P-type total reflection DBR layer form a first laser resonant cavity, the first reflection layer, the rare earth element doping layer, the oxidation layer and the second reflection layer form a second laser resonant cavity, and the first laser resonant cavity and the second laser resonant cavity form a photon cascade composite cavity.
As a further improvement of the present invention,
the laser generation mechanism in the first laser resonant cavity is semiconductor material electroluminescence, and under the excitation of injected current, electrons and holes are recombined to radiate a large number of photons to form first wavelength laser between energy bands; the laser generation mechanism in the second laser resonant cavity is photoluminescence, the first wavelength laser is used as pump light in the second laser resonant cavity, and when the first wavelength laser passes through the rare earth element doped layer, particle level transition of lanthanide metal ions in the rare earth element doped layer is excited to generate second wavelength laser;
and the second wavelength laser is continuously compressed in a pulse form from a continuous direction through the modulation of the electro-absorption modulation structure, and finally, the second wavelength laser pulse is output.
As a further improvement of the present invention,
the first reflecting layer is a total reflecting layer, the second reflecting layer is a semi-reflecting and semi-transmitting layer, and the reflectivity of the semi-reflecting and semi-transmitting layer to the laser with the second wavelength is 50% -99.5%.
As a further improvement of the present invention,
the active region is a semiconductor quantum well layer, and the semiconductor quantum well layer is of a multi-quantum well structure.
As a further improvement of the present invention,
the substrate is a GaAs substrate, and the rare earth element doped layer is formed by doping lanthanide in a GaAs-N type total reflection DBR layer.
As a further improvement of the present invention,
the doping mode of the lanthanide element is a mode that the GaAs layer and lanthanide arsenide alternately grow.
As a further improvement of the present invention,
the electroabsorption modulation structure comprises the following components in sequence from the substrate side to the second reflecting layer side: the waveguide layer is of a ridge-type waveguide structure.
As a further improvement of the present invention,
the ridge waveguide structure is a ridge structure formed by a material having a wider band gap and a lower refractive index and a material having a lower band gap and a higher refractive index.
The invention also provides a preparation method of the electroabsorption active modulation spontaneous pulse type photon cascade semiconductor laser, which comprises the following steps:
extending an N-type total reflection DBR layer, a rare earth element doping layer, an N-type waveguide layer, an active region, a P-type waveguide layer, an oxidation limiting layer and a P-type total reflection DBR layer on one side of a substrate to prepare a lanthanide rare earth element doped pump source VCSEL semiconductor laser extension structure;
epitaxially growing a first reflecting layer on the P-type total reflection DBR layer;
preparing an electroabsorption modulation structure on the other side of the substrate;
a second reflective layer is fabricated on the electroabsorption modulating structure.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, a pumping source VCSEL is utilized to output a certain wavelength specific laser pump, so that the number of particles of rare earth particles in a lanthanide rare earth element doped layer doped below an active region of the VCSEL is reversed, photoluminescence is performed, photon cascade is formed, and new wavelength light generated by the photon cascade oscillates in a second wavelength resonant cavity and is actively modulated by an electric absorption modulation structure; meanwhile, a ridge structure is formed by a material with a wider band gap and a lower refractive index and a material with a lower band gap and a higher refractive index, so that higher photoelectric conversion efficiency and better optical field mode limiting effect are obtained, and ultrashort laser pulses are generated by a multi-quantum well structure and strain compensation.
Drawings
Fig. 1 is a schematic structural diagram of an electro-absorption actively modulated spontaneous pulse type photonic cascade semiconductor laser according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the electro-absorption modulation structure of FIG. 1.
In the figure:
10. a substrate; 20. a pumping source VCSEL semiconductor laser epitaxial structure doped with lanthanide rare earth elements; 21. an N-type total reflection DBR layer; 22. doping a rare earth element layer; 23. an N-type waveguide layer; 24. an active region; 25. a P-type waveguide layer; 26. an oxidation limiting layer; 27. a P-type total reflection DBR layer; 30. a first reflective layer; 40. an electro-absorption modulation structure; 41. a sacrificial layer; 42. a lower contact layer; 43. the active region of the multiple quantum wells of the electroabsorption modulation structure; 44. an upper contact layer; 45. a coating layer; 46. a waveguide layer; 50. a second reflective layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The invention is described in further detail below with reference to the attached drawing figures:
as shown in fig. 1, the present invention provides an electro-absorption actively modulated spontaneous pulse type photon cascade semiconductor laser, comprising: the laser structure comprises a substrate 10, a lanthanide rare earth element doped pump source VCSEL semiconductor laser epitaxial structure 20, a first reflecting layer 30, an electric absorption modulation structure 40 and a second reflecting layer 50;
the substrate 10 is a single crystal GaAs substrate, and a pumping source VCSEL semiconductor laser epitaxial structure 20 doped with lanthanide rare earth elements and a first reflecting layer 30 are sequentially formed on one side of the substrate 10; the pump source VCSEL semiconductor laser epitaxial structure sequentially comprises an N-type total reflection DBR layer 21, a rare earth element doping layer 22, an N-type waveguide layer 23, an active region 24, a P-type waveguide layer 25, an oxidation limiting layer 26 and a P-type total reflection DBR layer 27 from the substrate side to the first reflection layer side;
the other side of the substrate 10 of the present invention is formed with an electro-absorption modulation structure 40 and a second reflective layer 50 in sequence; as shown in fig. 2, the electrical modulator structure 40 is designed as a quantum well, and includes, in order from the substrate side to the second reflective layer side: a sacrificial layer 41, a lower contact layer 42, an electro-absorption modulation structure multi-quantum well active region 43, an upper contact layer 44, a cladding layer 45, and a waveguide layer 46.
The N-type total reflection DBR layer 21, the N-type waveguide layer 23, the active region 24, the P-type waveguide layer 25, and the P-type total reflection DBR layer 27 constitute a first laser resonant cavity, the first reflective layer 30, the rare earth element doping layer 22, the oxide layer 26, and the second reflective layer 50 constitute a second laser resonant cavity, and the first laser resonant cavity and the second laser resonant cavity form a photonic cascade composite cavity.
Further, the first reflective layer 30 is a total reflective layer, the second reflective layer 50 is a semi-reflective and semi-transparent layer, and the reflectivity of the semi-reflective and semi-transparent layer to the laser with the second wavelength is 50% -99.5%.
Further, the active region 24 is a semiconductor quantum well layer, and the semiconductor quantum well layer is a multiple quantum well structure; the rare earth element doped layer 22 is formed by doping a lanthanide element, such as doped erbium, erbium ytterbium scandium, and other lanthanide metal ions, in the GaAs layer; the doping mode of the lanthanide is as follows: lanthanide ion implantation or alternate growth of GaAs and lanthanide alloy; specifically, the alternative growth mode of the GaAs layer and the lanthanide alloy is as follows: the alternative growth mode of the GaAs layer and the lanthanide alloy is as follows: growing a GaAs layer with the thickness of 20-30 nm, and growing an Er layer with the thickness of 20-30 nm on the GaAs layerxAsz、YbyAszOr XyAszA layer, wherein x + z is 1, y + z is 1; a GaAs layer with the thickness of 20-30 nm is grown, and an Er layer with the thickness of 20-30 nm is grown on the GaAs layerxAsz、YbyAszOr XyAszA layer; …, alternately growing for 8-10 times to obtain the rare earth element doped layer 22.
Yb in rare earth doped layer3+、Er3+The light emitting mechanism of (a) is:
the first step is as follows: yb of3+Is/are as follows2F7/2Excited by energy level absorbed pump photons2F5/2Energy level.
The second step is that:2F5/2energy level transfers energy to ground state Er3+，Er3+Transition to4I11/2Energy level, Yb3+Falling back to the ground state energy level.
The third step: er3+By4I11/2Radiationless transition of energy level to4I13/2Energy level.
The fourth step: under the excitation of pump light, Er3+Transition of stimulated radiation to4I15/2Energy level and radiates a photon having a wavelength of 1550 nm.
Further, in order to confine the optical field in the device, the waveguide layer 46 may adopt a ridge waveguide structure, which is a ridge structure formed by a material having a wider band gap and a lower refractive index and a material having a lower band gap and a higher refractive index.
The working principle of the invention is as follows:
the laser generation mechanism in the first laser resonant cavity is semiconductor material electroluminescence, and under the excitation of injected current, electrons and holes are recombined to radiate a large number of photons to form first wavelength laser between energy bands; the laser generation mechanism in the second laser resonant cavity is photoluminescence, the first wavelength laser is used as pump light in the second laser resonant cavity, and when the first wavelength laser passes through the rare earth element doped layer, particle level transition of lanthanide metal ions in the rare earth element doped layer is excited to generate second wavelength laser; the second wavelength laser is continuously compressed in a pulse form from a continuous direction through the modulation of the electric absorption modulation structure, and finally the second wavelength laser pulse is output.
The invention provides a preparation method of an electro-absorption active modulation spontaneous pulse type photon cascade semiconductor laser, which comprises the following steps:
extending an N-type total reflection DBR layer, a rare earth element doping layer, an N-type waveguide layer, an active region, a P-type waveguide layer, an oxidation limiting layer and a P-type total reflection DBR layer on one side of a substrate to prepare a lanthanide rare earth element doped pump source VCSEL semiconductor laser extension structure;
epitaxially growing a first reflecting layer on the P-type total reflection DBR layer;
preparing an electroabsorption modulation structure on the other side of the substrate;
a second reflective layer is fabricated on the electroabsorption modulating structure.
The preparation method comprises the following steps:
step 1, preparing a pumping source VCSEL semiconductor laser epitaxial structure 20 doped with lanthanide rare earth elements:
an N-type total reflection DBR layer 21, an N-type waveguide layer 23, an active region 24, a P-type waveguide layer 25, an oxidation limiting layer 26 and a P-type total reflection DBR layer 27 are epitaxially grown on the surface of a single crystal GaAs substrate 10 in sequence;
in the DBR growth process below the active region 24, the required doped rare earth element source and As source are turned on, the Ga source and Al source are turned off, the corresponding sources are evaporated to form an atomic beam with a certain beam density, and the beam density is 10 DEG-8Torr-10-10Projecting the epitaxial layer structure growing on the GaAs substrate under the high vacuum of Torr; the atomic beam emitted from the source impacts the surface of the substrate to be adsorbed; the adsorbed atoms migrate and decompose on the surface; atoms enter the lattice position to carry out epitaxial growth, and atoms which do not enter the lattice leave the surface due to thermal desorption, and finally a crystallization process region of the doped element crystal is formed, namely the rare earth element doped layer 22; and finishing the epitaxial growth of the subsequent active region 24, the P-type waveguide layer 25, the oxidation limiting layer 26 and the P-type total reflection DBR layer 27 of the VCSEL laser structure of the pumping source;
step 2, epitaxially growing and preparing a lower reflecting layer 30 of the second wavelength resonant cavity;
step 3, preparing the electroabsorption modulation structure 40: epitaxially manufacturing an electroabsorption modulation structure 40 on the lower surface of the GaAs substrate 10; in order to realize the design of the multiple quantum well and protect the electro-absorption modulation epitaxial structure, the epitaxial structure can be directly used as a mask for waveguide etching, a silicon dioxide mask is grown in advance on the top, a sacrificial layer 41 is prepared under the mask, an upper contact layer 44 is introduced above a multiple quantum well active region 43 of the electro-absorption modulation structure, an upper coating layer 45 structure is prepared on the surface of the upper contact layer 44 and used for preparing a structure of a waveguide 46, and a ridge waveguide structure is adopted for limiting an optical field on a device. On the waveguide structure of the laser part, a ridge waveguide with shallow etching is adopted, and the etching depth is controlled above the active quantum well layer;
step 4, a process for preparing an on-chip semiconductor laser:
preparing the pumping source VCSEL laser structure epitaxial wafer doped with the lanthanide rare earth element prepared in the step into a device structure such as a table top, a light-emitting limiting aperture, an N contact electrode and a P contact electrode of an on-chip photon cascade semiconductor laser through a deposition process, a photoetching process, an etching process, wet oxidation, metal sputtering/stripping and other processes;
step 5, preparing a reflecting layer 50 on the second wavelength resonant cavity;
and 6, injecting current into the electric absorption modulation structure and the pumping source VCSEL laser structure simultaneously to form the electric absorption active modulation spontaneous pulse type photon cascade semiconductor laser.
Example 1:
the invention provides an active modulation spontaneous pulse type photon cascade semiconductor laser and a preparation method thereof, wherein the active modulation spontaneous pulse type photon cascade semiconductor laser comprises the following steps:
step 1, preparing a pumping source VCSEL semiconductor laser epitaxial structure 20 doped with lanthanide rare earth elements:
an N-type total reflection DBR layer 21, an N-type waveguide layer 23, an active region 24, a P-type waveguide layer 25, an oxidation limiting layer 26 and a P-type total reflection DBR layer 27 are epitaxially grown on the surface of a single crystal GaAs substrate 10 in sequence;
in the DBR growth process below the active region 24, the Er source or Yb source and As source to be doped is turned on, the Ga source and Al source are turned off, the corresponding sources are evaporated to form an atomic beam with a certain beam density, and the beam density is 10 DEG-8Torr-10-10Projecting the epitaxial layer structure growing on the GaAs substrate under the high vacuum of Torr; the atomic beam emitted from the source impacts the surface of the substrate to be adsorbed; the adsorbed atoms migrate and decompose on the surface; atoms enter the lattice position to carry out epitaxial growth, and atoms which do not enter the lattice leave the surface due to thermal desorption, and finally a crystallization process region of the doped element crystal is formed, namely the rare earth element doped layer 22; and finishing the epitaxial growth of the subsequent active region 24, the P-type waveguide layer 25, the oxidation limiting layer 26 and the P-type total reflection DBR layer 27 of the VCSEL laser structure of the pumping source;
step 2, epitaxially growing and preparing a lower reflecting layer 30 of the second wavelength resonant cavity;
step 3, preparing the electroabsorption modulation structure 40: epitaxially manufacturing an electroabsorption modulation structure 40 on the lower surface of the GaAs substrate 10; in order to realize the design of the multiple quantum well and protect the electro-absorption modulation epitaxial structure, the epitaxial structure can be directly used as a mask for waveguide etching, a silicon dioxide mask is grown in advance on the top, a sacrificial layer 41 is prepared under the mask, an upper contact layer 44 is introduced above a multiple quantum well active region 43 of the electro-absorption modulation structure, an upper coating layer 45 structure is prepared on the surface of the upper contact layer 44 and used for preparing a structure of a waveguide 46, and a ridge waveguide structure is adopted for limiting an optical field on a device. On the waveguide structure of the laser part, a ridge waveguide with shallow etching is adopted, and the etching depth is controlled above the active quantum well layer;
step 4, manufacturing a device by a process:
after the epitaxial structure obtained in the above step is subjected to relevant photoetching processes, a mesa structure is manufactured on the epitaxial wafer to be processed by adopting methods such as wet etching or dry etching. Dry etching to expose oxide layer of chip, and etching Cl2/BCl3The gas flow ratio is 1: 3, etching power is 500W, and cleaning the chip. Finally, after cleaning, drying the epitaxial wafer to be processed by using high-purity nitrogen, and after ensuring cleanness, heating and drying the epitaxial wafer for later use;
and oxidizing the oxide layer in the table top of the epitaxial wafer to be processed from the outer side by using a wet selective oxidation technology to form an oxide aperture. The purpose is to limit carrier diffusion and confine the lateral optical field above the high-gain active layer. And (3) wet selective oxidation process: heating the oxidation furnace to 430 ℃, setting the water temperature to 90 ℃, and introducing a trace amount of N2The flow rate is 1L/min, the stability is 20min, and the redundant air in the oxidation furnace is removed. After 20min, start to feed N2The flow rate is 9L/min, and the stability is 30 min. After stabilizing for 30min, the epitaxial wafer is put into an oxidation furnace for oxidation, and the oxidation time is determined according to the oxidation aperture required to be oxidized. After the oxidation is finished, waiting for the furnace temperature to be reduced to 80 ℃, and taking out the epitaxial wafer for later use;
coating SU-8 negative photoresist on an epitaxial wafer to be processed, making an N electrode pattern after photoetching and developing, and growing an N electrode metal material by a magnetron sputtering technology;
placing the epitaxial wafer on which the N electrode metal grows in an acetone solution to be soaked for 2-4 hours, then stripping the metal, stripping the metal of a non-N electrode, and manufacturing a metal N electrode;
coating an L300 negative photoresist on an epitaxial wafer to be processed, making a pattern of a P electrode after photoetching and developing, and then growing a P electrode metal material by a magnetron sputtering technology;
the metal is to put the epitaxial wafer on which the P electrode metal grows into an acetone solution to be soaked for about 8 hours, then a metal stripping process is carried out, the metal of the non-P electrode is stripped, and a metal P electrode is manufactured;
step 5, preparing a reflection structure on the second wavelength resonant cavity:
surface deposition of Si on electro-absorption modulation structures3N4And the equal-transmission infrared optical material forms a semi-reflection and semi-transmission structure aiming at the second wavelength of 1550 nm.
The invention has the advantages that:
according to the invention, a pumping source VCSEL is utilized to output a certain wavelength specific laser pump, so that the number of particles of rare earth particles in a lanthanide rare earth element doped layer doped below an active region of the VCSEL is reversed, photoluminescence is performed, photon cascade is formed, and new wavelength light generated by the photon cascade oscillates in a second wavelength resonant cavity and is actively modulated by an electric absorption modulation structure; meanwhile, a ridge structure is formed by a material with a wider band gap and a lower refractive index and a material with a lower band gap and a higher refractive index, so that higher photoelectric conversion efficiency and better optical field mode limiting effect are obtained, and ultrashort laser pulses are generated by a multi-quantum well structure and strain compensation.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. An electro-absorption actively modulated spontaneous pulsed photonic cascaded semiconductor laser, comprising: a substrate;
a pumping source VCSEL semiconductor laser epitaxial structure doped with lanthanide rare earth elements and a first reflecting layer are sequentially formed on one side of the substrate, and the pumping source VCSEL semiconductor laser epitaxial structure sequentially comprises an N-type total reflection DBR layer, a rare earth element doping layer, an N-type waveguide layer, an active region, a P-type waveguide layer, an oxidation limiting layer and a P-type total reflection DBR layer from the side of the substrate to the side of the first reflecting layer;
an electric absorption modulation structure and a second reflecting layer are sequentially formed on the other side of the substrate;
wherein the content of the first and second substances,
the N-type total reflection DBR layer, the N-type waveguide layer, the active region, the P-type waveguide layer and the P-type total reflection DBR layer form a first laser resonant cavity, the first reflection layer, the rare earth element doping layer, the oxidation layer and the second reflection layer form a second laser resonant cavity, and the first laser resonant cavity and the second laser resonant cavity form a photon cascade composite cavity.
2. The electro-absorption actively modulated spontaneous pulsed photonic cascade semiconductor laser of claim 1,
the laser generation mechanism in the first laser resonant cavity is semiconductor material electroluminescence, and under the excitation of injected current, electrons and holes are recombined to radiate a large number of photons to form first wavelength laser between energy bands; the laser generation mechanism in the second laser resonant cavity is photoluminescence, the first wavelength laser is used as pump light in the second laser resonant cavity, and when the first wavelength laser passes through the rare earth element doped layer, particle level transition of lanthanide metal ions in the rare earth element doped layer is excited to generate second wavelength laser;
and the second wavelength laser is continuously compressed in a pulse form from a continuous direction through the modulation of the electro-absorption modulation structure, and finally, the second wavelength laser pulse is output.
3. An electro-absorption actively modulated spontaneous pulsed photonic cascade semiconductor laser as claimed in claim 1 or 2,
the first reflecting layer is a total reflecting layer, the second reflecting layer is a semi-reflecting and semi-transmitting layer, and the reflectivity of the semi-reflecting and semi-transmitting layer to the laser with the second wavelength is 50% -99.5%.
4. An electro-absorption actively modulated spontaneous pulsed photonic cascade semiconductor laser as claimed in claim 1 or 2,
the active region is a semiconductor quantum well layer, and the semiconductor quantum well layer is of a multi-quantum well structure.
5. An electro-absorption actively modulated spontaneous pulsed photonic cascade semiconductor laser as claimed in claim 1 or 2,
the substrate is a GaAs substrate, and the rare earth element doped layer is formed by doping lanthanide in a GaAs-N type total reflection DBR layer.
6. The electro-absorption actively modulated spontaneous pulsed photonic cascade semiconductor laser of claim 5,
the doping mode of the lanthanide element is a mode that the GaAs layer and lanthanide arsenide alternately grow.
7. An electro-absorption actively modulated spontaneous pulsed photonic cascade semiconductor laser as claimed in claim 1 or 2,
the electroabsorption modulation structure comprises the following components in sequence from the substrate side to the second reflecting layer side: the waveguide layer is of a ridge-type waveguide structure.
8. The electro-absorption actively modulated spontaneous pulsed photonic cascade semiconductor laser of claim 7,
the ridge waveguide structure is a ridge structure formed by a material having a wider band gap and a lower refractive index and a material having a lower band gap and a higher refractive index.
9. A method of fabricating an electroabsorption actively modulated spontaneous pulsed photonic cascade semiconductor laser as claimed in any of claims 1 to 8, comprising:
extending an N-type total reflection DBR layer, a rare earth element doping layer, an N-type waveguide layer, an active region, a P-type waveguide layer, an oxidation limiting layer and a P-type total reflection DBR layer on one side of a substrate to prepare a lanthanide rare earth element doped pump source VCSEL semiconductor laser extension structure;
epitaxially growing a first reflecting layer on the P-type total reflection DBR layer;
preparing an electroabsorption modulation structure on the other side of the substrate;
a second reflective layer is fabricated on the electroabsorption modulating structure.
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