CN114277359B - Air inlet pipeline, chemical vapor deposition furnace and method for introducing precursor into chemical vapor deposition furnace - Google Patents
Air inlet pipeline, chemical vapor deposition furnace and method for introducing precursor into chemical vapor deposition furnace Download PDFInfo
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- Chemical Vapour Deposition (AREA)
Abstract
An air inlet pipeline, a chemical vapor deposition furnace and a method for introducing a precursor into the chemical vapor deposition furnace belong to the field of semiconductors. An inlet conduit for delivering a precursor to a chemical vapor deposition furnace comprising: the hollow first pipe body is provided with a heating section and a refrigerating section which are sequentially distributed along the extending direction; the refrigerating mechanism is connected with the refrigerating section in a matching way; the heating mechanism is connected with the heating section in a matching way; and the hollow second pipe body is in heat conduction connection with the refrigerating section of the first pipe body along the axial direction and is communicated with the pipe cavity to form a fluid passage, and the temperature of the second pipe body is at least controlled by the refrigerating mechanism. The gas inlet pipe can be used for controlling the temperature of a precursor input into the chemical vapor deposition furnace, so that the precursor is prevented from being decomposed at the inlet of the deposition furnace, and the problem that the inlet is blocked due to deposition is prevented.
Description
Technical Field
The application relates to the field of semiconductor equipment, in particular to an air inlet pipeline, a chemical vapor deposition furnace and a method for introducing a precursor into the air inlet pipeline.
Background
As an excellent third-generation semiconductor material, a silicon carbide (SiC) material has advantages of high thermal conductivity, plasma etching resistance, oxidation resistance, wear resistance, corrosion resistance, high-temperature stability, and the like. Particularly, it has excellent characteristics of hardly generating particle contamination in a plasma etching manufacturing process.
Semiconductor device components fabricated using silicon carbide materials, such as Top Edge Ring, focus Ring, electrodes, susceptors for chemical vapor deposition equipment, etc., within etchers can achieve longer service life and higher quality.
Therefore, silicon carbide is one of important materials for ensuring yield and yield in the field of semiconductors.
Currently, the main fabrication technology for silicon carbide parts is HTCVD (high temperature chemical vapor deposition ) technology. The precursor is continuously decomposed and deposited in a high-temperature growth furnace, so that the expected silicon carbide material is obtained.
A typical silicon carbide material fabrication facility, a chemical vapor deposition facility, generally includes an inlet port, a carrier, a heating device, and an outlet port.
As the process of semiconductor devices continues to advance, the device linewidth continues to decrease. These place increasing demands on semiconductor device manufacturing equipment and are mainly reflected in the precise control of chemical vapor deposition gas, temperature, and pressure parameters. Among these, stable delivery of precursors and other reactant/process gases is particularly critical.
In a typical high temperature chemical vapor deposition process for preparing silicon carbide materials, a precursor (e.g., methyltrichlorosilane), a mixture of hydrogen and nitrogen, is fed into a chamber of an apparatus, and the temperature in the chamber is raised to the decomposition reaction temperature of the precursor by a heating device, so that the silicon carbide material is deposited and formed on the surface of a substrate prepared on a carrier.
The applicant finds that the problem of uneven temperature field in the furnace caused by large difference between the air inlet temperature and the average temperature in the furnace exists in the long-term research of the current equipment, and the problem can influence the quality of silicon carbide deposited in the furnace, not only can influence the quality of a silicon carbide film deposited near an air inlet, but also can cause the difference between the quality of the silicon carbide film deposited near the air inlet and the quality of the silicon carbide film at other positions. In addition, the part of the air inlet, which is positioned in the furnace, is influenced by heat radiation for a long time, so that the problem of overhigh temperature easily occurs, partial precursor is deposited at the outlet of the air inlet, the flow and the flow velocity of the air inlet are changed, and the deposition quality of silicon carbide is poor.
Disclosure of Invention
The application provides an air inlet pipeline, a chemical vapor deposition furnace and a method for introducing a precursor into the air inlet pipeline. The scheme can be used for relieving or even solving the problems that the temperature field of the chemical vapor deposition furnace is easy to fluctuate and the air inlet is blocked in the use process, so that the silicon carbide deposition quality is improved.
The application is realized in the following way:
in a first aspect, an example of the present application provides an inlet conduit for delivering a precursor to a chemical vapor deposition furnace.
The air intake duct includes:
the hollow first pipe body is provided with a heating section and a refrigerating section which are sequentially distributed along the extending direction;
the heating mechanism is connected with the heating section in a matching way;
the refrigerating mechanism is connected with the refrigerating section in a matching way; and
the hollow second pipe body is connected with the refrigerating section of the first pipe body in an axial heat conduction way and communicated with the pipe cavity to form a fluid passage, and the temperature of the second pipe body is at least controlled by the refrigerating mechanism.
The intake pipe has a fluid passage and is used as a transport passage for the precursor. When the chemical vapor deposition furnace is used, the fluid precursor enters the interior of the deposition furnace through the fluid channel to react.
Since the fluid channel is mainly constituted by the lumens of the first and second tubes, the devices fitted to the first and second tubes can exert corresponding effects and actions on the fluid-like precursor therein.
The heating section of the first pipe body can heat (or preheat) the precursor in the conveying process through the heating mechanism body; meanwhile, the refrigerating section of the first pipe body can cool the second pipe body through the refrigerating mechanism, accordingly, the contact of the precursor and the overheated second pipe body is avoided, decomposition occurs in advance, the precursor is deposited on the wall of the second pipe body, blocking occurs, the flow and the flow velocity of air inlet are changed, and the deposition quality is affected. In this way, the temperature of the precursor entering the deposition furnace through the fluid channel is well controlled, so that the influence of the relatively low temperature precursor on the temperature field within the relatively high temperature reaction chamber can be prevented.
And through the selective control of the temperature, the temperature of the fluid release port of the second pipe body in the reaction chamber can be effectively regulated. Thus, when the precursor reaches the gas inlet of the deposition furnace, the influence of the ambient temperature is controlled in a proper range so as to avoid the blockage of the gas inlet by the decomposed sediment.
Furthermore, the heating power of the first pipe body and/or the cooling power of the second pipe body can be adjusted by calculating the inlet temperature of the precursor, the outlet temperature of the precursor, the heat transfer coefficient of the first pipe body, the heat transfer coefficient of the second pipe body and the like, so that the accurate control of the temperature of the precursor at the fluid release port of the second pipe body in the reaction chamber is realized, and the more accurate control of the vapor deposition reaction condition is realized.
According to some examples of the application, the first tube and the second tube are detachably connected; and/or the first pipe body and the second pipe body are connected in a mutually sleeved mode; optionally, the second pipe body is at least sleeved in the refrigeration section of the first pipe body.
The first and second tubes may be removable when necessary and desired to allow replacement or repair of either or both as desired. In addition, the two pipe bodies are connected in a sleeved mode, so that the two pipe bodies can be in more sufficient contact (larger contact area), and heat transfer is facilitated.
According to some examples of the application, the lumen of the second tube has a reducing section, and the reducing section is adjacent to the refrigeration section of the first tube, the diameter of the reducing section gradually decreasing in a direction from the first tube to the second tube. Optionally, the lumen of the second tube body has an equal diameter section, the equal diameter section is connected with the variable diameter section, and the connection position is located at the end of the variable diameter section along the direction from the first tube body to the second tube body.
The second pipe body is provided with the reducing section, so that the conveying process and manifold of the precursor can be limited, the flow velocity of the precursor in the second pipe body is improved, and the distribution of the precursor in the deposition furnace can be controlled. Further, the second pipe body is also provided with an equal-diameter section, so that the precursor after passing through the variable-diameter section can flow in the equal-diameter section to be stable, and the conveying stability is improved.
According to some examples of the application, the first tube is provided with a catch at an end configured to contact an inner wall of the deposition furnace to allow a gas tight connection of the first tube with the deposition furnace.
In a second aspect, an example of the present application provides a chemical vapor deposition furnace.
The chemical vapor deposition furnace comprises an air inlet pipeline and a furnace body. Wherein the furnace body has a furnace wall and a furnace chamber defined by the furnace wall. And the furnace wall has an input port extending through the furnace chamber, the cooling section of the second body of the air intake conduit being held at the input port and the furnace chamber being in communication with the fluid passageway.
According to some examples of the application, a chemical vapor deposition furnace includes: and the objective table is connected with the furnace wall and is positioned in the furnace chamber. Optionally, the object stage is provided with an object carrying plate and a supporting column which are connected with each other, and two ends of the supporting column are respectively connected with the furnace wall and the object carrying plate. And/or the furnace wall has a discharge opening through the furnace chamber, optionally the discharge opening is connected to a hollow discharge pipe, optionally the discharge opening and the input opening are located at both ends of the furnace body remote from each other.
A stage within the oven can be used to place the substrate as desired to deposit a precursor-fabricated deposited film thereon.
In a third aspect, an example of the present application provides a chemical vapor deposition furnace. The chemical vapor deposition furnace includes:
a reaction chamber formed by a wall body, wherein the wall body forms a columnar extending inner cavity; along the extending direction, the wall body is provided with an air inlet through hole and an air outlet through hole which are communicated with the inner cavity at two ends far away from each other;
the object placing table is provided with an upright post and an object placing plate which is supported in the inner cavity through the upright post;
the air supply pipe is provided with a front section and a rear section which are detachably and thermally sleeved, wherein the rear section is at least partially positioned in the air inlet through hole and is in airtight connection with the wall body, and the front section is partially positioned outside the wall body;
The cooling module is connected with the rear section of the air supply pipe and is used for providing cold energy/cooling the rear section at the rear section;
and the heating module is connected with the front section of the air supply pipe and is used for providing heat at the front section.
In a fourth aspect, examples of the present application provide a method of introducing a precursor to a chemical vapor deposition furnace. The method comprises the following steps:
providing a chemical vapor deposition furnace with a feeding channel, wherein the furnace chamber of the chemical vapor deposition furnace is in a heating state;
sequentially heating and cooling the feed channels along the input direction, and simultaneously conveying the precursor into the furnace chamber through the feed channels;
the precursor is controlled in temperature between a first temperature and a second temperature through the heated feed channel, wherein the first temperature is 60% of the process temperature of the deposition furnace, and the second temperature is 25% of the process temperature of the deposition furnace.
By controlling the temperature of the precursor above the second temperature, whereby the temperature of the precursor entering the deposition furnace is not too low relative to the process temperature within the deposition furnace, adverse effects on the temperature field within the deposition furnace may be reduced.
By controlling the temperature of the precursor below the first temperature, the precursor may be prevented from being heated beyond the decomposition temperature of the precursor, thereby reducing the likelihood of premature decomposition of the precursor as it passes through the feed channel.
Meanwhile, the feeding channel is cooled, so that the part of the feeding channel in the deposition furnace can be further prevented from being heated to a temperature exceeding the decomposition temperature of the precursor, and the blockage of the air inlet caused by the contact of the precursor with the overheated feeding channel wall and the early decomposition of the precursor on the wall can be reduced.
According to some examples of the application, the chemical vapor deposition furnace is provided by the aforementioned chemical vapor deposition furnace.
In the implementation process, the air inlet pipeline, the chemical vapor deposition furnace based on the air inlet pipeline and the method for introducing the precursor into the deposition furnace can solve the problem of temperature field fluctuation easily happening in the existing deposition furnace, such as more stable temperature field and air inlet blockage, such as blockage reduction or no blockage generation. In addition, by using the method of the application, the temperature of the precursor entering the reaction chamber can be accurately controlled, thereby realizing more refined process control.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a chemical vapor deposition furnace in an example of the application in cross-section along an axial direction;
fig. 2 shows a partial enlarged view of the portion a in fig. 1;
fig. 3 shows a schematic cross-sectional structure of the intake duct in fig. 1.
Icon: 100-chemical vapor deposition furnace; 1-furnace wall; 2-an air inlet pipeline; 21-a first tube; 22-a second tube; 3-a discharge pipe; 4-stage; 212-a first lumen; 220-snap; 221-a second lumen; 301-a heating section; 302-a refrigeration section; 305-furnace body; 401-a heating mechanism; 402-refrigeration mechanism.
Detailed Description
In the field of semiconductor technology, chemical Vapor Deposition (CVD) is an important film-forming process. Correspondingly, the chemical vapor deposition furnace is an important implementation device for realizing chemical vapor deposition.
Chemical vapor deposition is a method of forming a thin film by performing chemical reaction on the surface of a desired substrate mainly using one or more gas/fluid-like compounds or elements containing the element of the target thin film.
In some cases, the target film made by the chemical vapor deposition technique is identical in elemental composition to the starting material, while in other cases, the target film made by the chemical vapor deposition technique is different in elemental composition to the starting material. Regardless of the specific process, chemical vapor deposition is typically performed by decomposing and depositing the feedstock at a relatively high temperature. This is particularly common in high temperature chemical vapor deposition equipment and processes.
Currently, research in the industry is focused on improvements in materials, device structures, process conditions, and parameters for film fabrication. In practice, however, the inventors have found that equipment (e.g., chemical vapor deposition furnaces) for carrying out the corresponding processes present problems and thus make it difficult to further optimize and improve the service life of the equipment, the process cycle time, etc.
The inventors have found that one of the main manifestations of this problem is:
since the inlet air temperature of the deposition furnace is generally low and the temperature in the furnace is high (for example, when methyltrichlorosilane is used as a precursor, the temperature in the furnace is generally set to be 1050 ℃ to 1450 ℃) and thus the temperature near the air inlet is 50 ℃ to 100 ℃ lower than the set control temperature, thereby causing uneven temperature distribution in the furnace and further affecting the quality of film deposition.
In addition, the deposition period of the chemical vapor deposition furnace is longer, generally more than 24 hours, and after long-time deposition, the air inlet can be blocked, namely, film-making raw materials (precursor, process gas and the like) can form solid deposits at the air inlet of the deposition furnace. These deposits interfere with the normal delivery of the precursor and thus the delivery path of the gas. This adversely affects the quality of the subsequent film formation and also increases the film formation time, thereby extending the process cycle of film formation, and further increasing the cost of the product to be produced, decreasing the utilization rate of the equipment, and the like. Even more serious, when the air inlet is severely blocked, a process accident may even be caused.
Through analysis and research, the inventors considered that the important cause of the above-described problems is: precursor decomposition and deposition take place in advance at the gas inlet of the deposition furnace. Thus, there is a need to inhibit or otherwise prevent decomposition and deposition of the precursor at the gas inlet. In addition, the above problems are also due to the relatively low temperature of the precursor. Therefore, the temperature of the precursor needs to be controlled.
In some attempts, the precursor input process is selected to be separated from the high temperature reaction process, so that the high temperature influence of the precursor at the discharge position of the gas inlet is avoided, and the decomposition and deposition of the precursor at the position are restrained. However, such attempts or assumptions are generally not easy to implement. This is either limited by process requirements or by factors such as manufacturing costs and equipment.
Therefore, there is a need to propose a new solution to overcome the problems of the inlet of the chemical vapor deposition furnace being prone to blockage and temperature fluctuations.
In view of this, in the present example, the inventors have purposefully proposed a solution. In an example, the inventors propose to control the temperature of the inlet of the chemical vapor deposition furnace so that the precursor input is not decomposed at the inlet, and thus deposition at that location is not occurred, and thus the problem of clogging due to deposition is also overcome.
Further, considering that the precursor as the raw material gas is generally stored and used at normal temperature or relatively low temperature, the temperature of the precursor inputted into the chemical vapor deposition furnace may be significantly lower with respect to the decomposition and deposition reaction temperatures in the furnace. Thus, the relatively low temperature precursor forms a high temperature differential with the relatively high temperature in-furnace temperature, which can have a significant effect on the temperature field in the furnace, in some cases, even affecting the normal film forming process or substantially adversely affecting the quality of the film formed.
Thus, the exemplary embodiment of the present application also provides for the design and optimization of this. In other words, the solution proposed by the inventors makes it possible to avoid decomposition and deposition of the precursor at the inlet of the deposition furnace, and also to control the excessive influence of the input of "cold" precursor on the temperature field inside the furnace. That is, the solution of the present application organically integrates the new solution proposed by the present inventors for the two defects of the existing apparatus, and provides a novel process and apparatus, and accordingly solves the problems encountered at present, achieving good effects.
It should be noted that while the present application is described in terms of chemical vapor deposition and its corresponding deposition furnace, an exemplary embodiment of the present application is described. However, it should be noted that the exemplary embodiments of the present application are applicable in other situations where such a need exists, and are not limited to the situations mentioned herein. In other words, for the situation that there is a need to perform material transportation under the temperature control condition or temperature control of the material itself, the scheme of the present application can be applied; alternatively, conventional or appropriately adapted solutions based on the concepts of the present exemplary embodiments may be applied in a variety of fields, such as physical vapor deposition PVD, high temperature sintering, etc., or other scenarios involving heat treatment processes.
The exemplary aspects of the present application will be described in connection with use in chemical vapor deposition.
In a first aspect, the inventors propose an inlet conduit 2 for delivering a precursor to a chemical vapor deposition furnace, see fig. 1 to 3.
As a whole, as shown in fig. 2 and 3, the intake duct 2 mainly includes a first pipe body 21, a heating mechanism 401, a cooling mechanism 402, and a second pipe body 22. The first pipe body 21 and the second pipe body 22 are connected to form a main body part for conveying the precursor, and the heating mechanism 401 and the refrigerating mechanism 402 are arranged on the first pipe body 21 in a matching manner, and realize corresponding heating and refrigerating functions.
The first tube 21 is hollow, and along the extending direction of the tube cavity, the first tube 21 has a heating section 301 and a cooling section 302 in sequence, as shown in fig. 2. Thus, from the use state, the precursor will pass through the heating section 301 and then the cooling section 302 within the first lumen 212 of the first tube 21. In addition, the first tube is typically of a suitable length or has an extension beyond the heating section 301 and the cooling section 302 (not shown) based on the need to facilitate connection to other feed lines, etc.
The first tube 21 may be made of various materials, and the pipe diameter, length, wall thickness, diameter of the pipe cavity, and other structural dimensions thereof may be selected according to specific situations, which is not particularly limited in the present application. However, considering the high Wen Qingkuang that may be involved in a chemical vapor deposition process, it is advantageous to use a heat and corrosion resistant material for the first tube 21; the material is, for example, a special alloy, stainless steel, or the like.
The first tube 21 may have a substantially uniform diameter of its lumen over its entire length and may be of a straight configuration. The foregoing configuration may have better precursor delivery smoothness than in the case of bending. Of course, the first pipe body 21 may be provided in a curved structure as needed for piping arrangement. In addition, the first pipe body can be provided with a sealing cover; and the diameter of the sealing cover is larger than the outer diameter of the first pipe body. Therefore, when the first tube is applied to the deposition furnace, the cover of the first tube on the reaction chamber side of the furnace wall can be fitted to the furnace wall of the deposition furnace, thereby maintaining the air tightness between the first tube and the furnace wall. In some examples, the cover may also be configured in a snap-fit manner. For example, referring to fig. 2 and 3, a buckle 220 (which may be an annular protrusion) is provided on the outer surface of the pipe wall of the first pipe body 21; the catch 220 can abut against the inner wall surface of the deposition furnace, thereby allowing the first tube 21 (and the second tube 22) to be conveniently mounted with the deposition furnace in place. In such an example, the first tube 21 has a substantially "T" shaped structure.
The intake duct 2 is provided with a heating mechanism 401 and a cooling mechanism 402, respectively, corresponding to the heating section 301 and the cooling section 302 of the first pipe body 21. In different examples, different implementations of the heating mechanism 401 and the cooling mechanism 402 may exist. This is not particularly limited in the examples of the present application.
As an alternative example, the heating mechanism 401 may be, for example, a resistance wire heating module or a heating tube heating module. The resistance wire heating module and the heating tube heating module may be spirally wound around the outer surface of the tube wall of the heating section 301 of the first tube body 21. Alternatively, in other examples, the heating mechanism 401 may also be a heating plate or a heating belt, which is attached to the outer surface of the tube wall of the heating section 301 of the first tube body 21; alternatively, the heating mechanism 401 may also be a heating jacket that is sandwiched outside the heating section 301 of the first tube 21. Alternatively, the heating mechanism 401 may also implement heating by electromagnetic induction, and accordingly the heating section 301 of the first tube body 21 is made of a material capable of generating heat by electromagnetic induction, such as iron. When the heating mechanism 401 is constructed by adopting the above-described structure, it is configured by being provided with a power device or the like in a matching manner and implemented by a technique known to those skilled in the art or a commercially available device, and will not be described in detail herein.
In addition, in order to effectively control the temperature, the heating mechanism 401 may be further configured with a temperature sensor (not shown) for monitoring the temperature. The temperature sensor may be mainly used to detect the temperature of the precursor that is conveyed in the lumen of the first tube 21 (mainly referred to as the heating section, or may be configured in the cooling section), and thus, the temperature sensor may be disposed (glued or bolted, welded, etc.) on the inner wall surface of the heating section 301 of the first tube 21. And an adjustment mechanism may be provided for adjusting the temperature when necessary, corresponding to the implementation of the heating mechanism 401.
For example, when the heating mechanism 401 is configured to heat the heating sheet, the controller and the temperature touch sensor cooperate to detect the temperature and adjust the temperature according to the comparison result of the set temperature, for example, when the temperature is detected to be less than the design value, the operating voltage of the heating sheet is increased, so that the temperature is increased.
As described above, the heating mechanism 401 may be configured in the above-described manner corresponding to the heating section 301 of the first tube body 21; and the refrigeration mechanism 402, corresponding to the refrigeration segment 302 of the first tubular body 21, may be configured in a manner described below.
Illustratively, the refrigeration mechanism 402 may be a refrigeration sheet, a refrigeration tube, or the like, and it may be, for example, helically wound to the outer surface of the tube wall of the refrigeration section 302. The cooling fin or tube may be operated to have a relatively lower temperature to achieve a reduced temperature by heat transfer. In other words, such a cooling fin and cooling tube may itself provide a low temperature condition.
In other examples, the refrigeration mechanism 402 can be a member capable of providing a condition for a substance or object having a low temperature to cooperate with the refrigeration segment 302. For example, in some examples, the cooling mechanism 402 is primarily a sandwich cavity or coolant channel formed in the wall of the cooling section 302. The inter-layer cavity/cooling channel may be filled with a refrigerant liquid or gas to cool the refrigerant segment 302.
It should be noted that the interlayer cavity may be integrated with the wall of the first pipe body 21, or may be independent of each other. In other words, the sandwich cavity may be closed by the outer surface of the tube wall of the cooling section 302 to which the solid plate body is attached. Thereby, a cavity which can contain the refrigerating substance is formed between the solid plate body and the outer surface of the pipe wall. Alternatively, the sandwich cavity may be hollow plate bodies that are sealingly connected by the outer surface of the tube wall of the cooling section 302; and the hollow plate body is provided with a cavity for accommodating the refrigerating substance.
In the example, the first tube body 21 has a cavity-cooling fluid channel outside the tube wall provided by a cooling mechanism 402 implemented in the form of a cooling tube. In addition, a fluid inlet is disposed in communication with the cavity for facilitating injection of the refrigerated substance into the cavity. Further, a fluid outlet may be provided in communication with the cavity based on facilitating the discharge of the refrigerated substance.
When the fluid input port and the fluid output port are simultaneously provided, the supply of the refrigerant substance can be performed in such a manner that the refrigerant substance is simultaneously input and simultaneously output. In order to improve the cooling effect, the precursor and the refrigerant substance may be convected and transported. That is, the fluid input port is adjacent to the second tube 22 and the fluid output port is remote from the second tube 22. Further, the fluid inlet may be as close to the second tubular body 22 as possible, so that when it is applied to a chemical vapor deposition furnace, the fluid inlet is as close to the furnace wall 1 of the deposition furnace as possible. Wherein the fluid input port and the fluid output port are respectively provided with corresponding pipelines. For example. The fluid input port is connected with the water inlet pipe, and the fluid output port is connected with the water outlet pipe.
In these examples, the refrigeration mechanism 402 may configure the pump body and tubing and the refrigeration mass storage device to pump the refrigeration mass into the cavity of the tube wall of the first tube 21. The specific composition of the refrigerating substances, the conveying speed and the like can be controlled according to different temperature control requirements. In some examples, the refrigeration substance may be pure water, ethanol, propylene glycol, oil, or the like; the transport rate/flow rate thereof is, for example, 0.5L/min to 5L/min.
From the use state of the chemical vapor deposition furnace, most of the first tube 21 is located outside the deposition furnace and part (mainly referred to as the cooling section) of the first tube extends into the furnace wall 1 of the deposition furnace, while most of the second tube 22 is located inside the deposition furnace, see fig. 1 and 2. The majority of the second tube 22 is located in the furnace wall 1 of the furnace body 305, and the rest is located in the furnace chamber; or in other examples where this is necessary, the majority being located within the furnace of the deposition furnace means that all of the second tubular body 22 is located within the furnace walls of the deposition furnace.
Similar to the first tube 21, the second tube 22 may be made of various materials as required, which is not limited by the present application. The second tube 22 is in the example shown a graphite material. As shown in fig. 3, for the delivery of the precursor, the second tube 22 is also hollow and thus has a second lumen 221. And thus, the second tube body 22 is connected in lumen communication with the first tube body 21, thereby constituting a fluid channel/fluid passageway. The first pipe body 21 and the second pipe body 22 can be detachably connected or fixedly connected; the two can be directly connected (the scheme of the application) or indirectly connected through an optional middle section; or the first tube 21 and the second tube 22 are sections of the same pipe at different locations.
Illustratively, the second tube 22 is connected to the first tube 21, for example, by: one end of the second tube 22 is connected to an end of the refrigerant section 302 of the first tube 21. In the illustrated structure of the present application, the first pipe body 21 and the second pipe body 22 are two pipe sections independent of each other, and are connected in a sleeved manner. Further, the second tube 22 is sleeved in the refrigerating section 302 of the first tube 21. The sleeving manner may be that the second tube 22 is inserted into the lumen of the first tube 21, please refer to fig. 2 and 3; alternatively, the first tube 21 is inserted into the lumen of the second tube 22.
The first tube 21 and the second tube 22 as described above are thus nested with each other to have overlapping portions. Referring to fig. 2, the relative magnitude relationship of the overlapping dimension (D1) and the wall thickness (D2) of the second tubular body 22 may be optional. In the illustrated construction of the present example, the overlap dimension is primarily at the cooling section of the first tube 21 and corresponds approximately to the thickness of the walls of the deposition furnace. In other examples, the length of the overlap is 0.5 to 1 times the wall thickness of the second tubular body. In order to ensure that the overlap length meets the design requirements or to facilitate the butt joint of the two tubes.
In the construction shown in fig. 1 and 2, this overlap is located on the wall 1 of the deposition furnace when applied to the deposition furnace. As an advantageous option, the refrigeration mechanism 402 can provide more direct cooling of the location where the two overlap or join, which will facilitate control of the precursor drain temperature.
In short, the tail of the first tube 21 is connected to the head of the second tube 22. And the two are also in heat-conductive engagement at this junction, so that the second tube 22 is cooled/temperature controlled by the cooling mechanism 402 provided at the cooling section 302 of the first tube 21, thereby creating a controlled temperature at the fluid discharge (inlet) of the second tube 22. In this case, the second tube 22 is subjected to both the cooling effect of the first tube 21 and the heating effect of the heating section of the first tube 21, and when applied to a chemical vapor deposition furnace, is also subjected to the combined effect of the heating means in the deposition furnace. Since the heating temperature of the heating mechanism 401 described above is generally determined according to the film to be produced and the precursor (which has been designed and selected before deposition), the temperature of the second tube 22 is mainly adjusted during deposition by the cooling mechanism 402 and the heating mechanism 401, and the function of the cooling mechanism 402 is generally greater. In other words, the temperature of the second tube 22 is at least and primarily controlled by the refrigeration mechanism 402.
Further, since the second tube 22 is the "last" path for the precursor to enter the deposition furnace, the configuration of the lumen of the second tube 22 can serve the various requirements of its delivery. Such as the orientation of the lumen of the second tube 22, the flow rate, the location within the deposition furnace, etc.
In some examples of the application, the lumen of the second tube 22 is structurally designed. For example, the lumen of the second tube 22 has a variable diameter section (not shown) as shown in FIG. 3. Referring to fig. 2 and 3 in combination, the variable diameter section is adjacent to the refrigeration section 302 of the first tube 21, and the diameter of the variable diameter section gradually decreases in the direction from the first tube 21 to the second tube 22. In other words, the variable diameter section is flared or has a diverging structure from one direction or a converging structure from the opposite direction.
Still further, the lumen of the second tube 22 may also have an isodiametric section, and the isodiametric section is remote from the refrigeration section 302 of the first tube 21. Alternatively, the constant diameter section is connected to the variable diameter section, and the connection position of the constant diameter section and the variable diameter section is positioned at the end of the variable diameter section in the direction from the first pipe body to the second pipe body. That is, the variable diameter section is connected to the minimum diameter end of the constant diameter section. In other words, in some examples, the lumen of the second tube 22 has an equal diameter section and a variable diameter section that are sequentially and directly connected. Wherein the distance between the constant diameter section and the first tubular body is closer along the direction of fluid transport, and correspondingly the distance between the variable diameter section and the first tubular body is further.
As the name suggests, the constant diameter section has a constant or tolerance or a range of acceptable fluctuation amplitudes over its entire length. In the illustrated construction, the lumens of the first tube 21 are of equal diameter throughout the length and equal to the maximum diameter of the variable diameter section of the second tube 22, while the diameter of the constant diameter section is the same and equal to the minimum diameter of the variable diameter section of the second tube 22. The pipe diameters of the first pipe body 21 and the second pipe body 22 may have other fitting manners and are not limited to the above manner.
The second tube 22 may optionally be provided with a sensor in the wall of the lumen at the outlet from the deposition furnace. The sensor can monitor the temperature of the pipe cavity wall in real time and transmits the temperature to a controller outside the furnace body, and the controller can adjust the temperature of the pipe cavity wall to a set value by adjusting the heat exchange amount of the refrigerating mechanism/the refrigerating module.
Further, a temperature and/or pressure and/or flow sensor is further disposed on the wall of the pipe cavity of the second pipe body 22 at the outlet of the deposition furnace, so that the temperature, pressure and flow information of the reaction gas flowing into the deposition furnace through the second pipe body can be monitored in real time and sent to the controller outside the furnace body, and the controller can adjust the temperature of the gas entering the deposition furnace to a set value by adjusting the heat exchange amount of the heating module.
The inventors have thus far described the intake duct 2 in the example of the present application, and the following describes an application example thereof, a chemical vapor deposition furnace.
In an example, as shown in fig. 1, the chemical vapor deposition furnace 100 includes an intake duct 2 and a furnace body 305.
Wherein the furnace body 305 has a furnace wall 1 and a furnace chamber defined by the furnace wall 1. The furnace wall 1 has an inlet penetrating the furnace chamber as a structure to be fitted to the intake duct 2. When the outer diameters of the first tube 21 and the second tube 22 are different, the input port may also be of a variable diameter. I.e. the diameter of the inlet opening on the side close to the oven cavity is different from the diameter of the inlet opening on the side remote from the oven cavity.
A portion (or all in other examples) of the second tube 22 of the air intake duct 2 is held (may be an adhesive or a threaded connection or a welded or interference fit, etc.) and a portion of the second tube 22 also extends into the oven cavity. And, the cavity of the furnace body 305 communicates with the fluid passage of the intake duct 2.
Further, as a structure for placing a substrate or base plate supporting a deposited film layer, the chemical vapor deposition furnace 100 may further include a stage 4 connected to the furnace wall 1, and the stage 4 is located in the furnace chamber. In use, the substrate is held (e.g., clamped or sucked by a chuck, etc.) on the stage 4. As an alternative example, the stage 4 has a carrier plate and a support column connected to each other; wherein, both ends of the support column are respectively connected with the furnace wall 1 and the carrying plate. The connection between the carrier plate and the support column, and the connection between the support column and the furnace wall 1 may be achieved by mechanical connection known in the art, and will not be described here.
In addition, in cooperation with the air intake duct 2, the deposition furnace may be further provided with a discharge port that communicates with the furnace chamber of the furnace body 305. Alternatively, the deposition furnace may be further provided with a discharge pipe 3 connected to the furnace wall 1 through a discharge port and communicating with the furnace chamber. The exhaust port is used to vent gases, such as unreacted precursor and gases, mixed materials of reaction products and other byproducts, and the like. In some examples, the discharge and inlet ports on the furnace wall 1 are located at opposite ends of the furnace body 305, away from each other.
In an example, another chemical vapor deposition furnace includes a reaction chamber, a load lock, a plenum, a heating module, and a heating module.
Wherein the reaction chamber provides a primary site for decomposition and deposition of precursors, process gases, and the like. The reaction chamber is formed by walls (and optionally various additions thereto) and the walls also define a cylindrically extending cavity-to provide the aforementioned location. And, along the extending direction/axial direction of the inner cavity, the wall body is provided with an air inlet through hole and an air outlet through hole which are respectively communicated with the inner cavity at two ends far away from each other.
In some examples, the distribution manner of the air inlet through holes and the air outlet through holes may be defined as follows: the axis of the air inlet through hole, the axis of the air outlet through hole and the axis of the inner cavity are coplanar. Or, the axes of the air inlet through holes and the axes of the air outlet through holes are distributed in the tangential plane of the inner cavity along the axes; further, the axes of the two through holes may be parallel; or the extension lines of the axes of both intersect each other.
The object placing table is mainly composed of two parts, namely an upright post and an object placing plate which is supported in the inner cavity through the upright post. The column may be supported approximately along the extension of the interior of the reaction chamber, and its axis may also be collinear with the axis of the interior of the reaction chamber. That is, the post may be centrally located within the interior cavity. The storage plate can be a plane plate or a plate with grooves.
In some examples, the height of the posts may also be adjustable so that the height of the storage plate in the interior cavity relative to the inner bottom wall of the reaction chamber along the axial direction of the interior cavity may be controlled. The height of the upright is adjustable, for example, by constructing the upright as a multi-section telescopic (electrostrictive) connecting structure; alternatively, the column may be a pneumatic piston or a hydraulic piston.
Further, the column may be configured to be rotatable in the axial direction of the cavity. Therefore, the object placing plate can also perform lifting and rotating motions through the cooperation of the lifting and rotating motions of the upright post. Then, since the placement plate is capable of movement in a plurality of directions, it is possible to increase the degree of freedom of deposition for depositing a desired material film provided on the surface thereof, thereby improving the quality of the film deposited on the substrate by changing the posture of the substrate when it is really necessary.
Still further, in still other examples, the pitch angle of the storage plate may also be adjusted. The adjustment of the pitch angle can be achieved, for example, by: the object placing plate is connected with the upright post through a hinge shaft sleeved with a bearing, and the hinge shaft is also provided with a driver. Therefore, the driver can drive the hinge shaft to rotate, and then the pitch angle of the object placing plate is changed.
In addition, as a means for supplying the precursor gas into the reaction chamber, the gas supply pipe has a front section and a rear section which are detachably heat-conductively coupled. The front section is positioned outside the wall body, and the rear section is at least partially positioned in the air inlet through hole and is in airtight connection with the wall body.
In addition, in order to realize the effect of introducing the refrigerating fluid to achieve cooling, the rear section of the air supply pipe can be further provided with an interlayer cavity, a water inlet pipe close to the front section and a water outlet pipe far away from the front section, and the water inlet pipe and the water outlet pipe are respectively communicated with the interlayer cavity. Therefore, when cooling is needed, cooling liquid is pumped into the interlayer cavity through the external water pipe of the water inlet pipe or the direct water pump. Meanwhile, the drain pipe can be externally connected with a water collecting pipe and a water collecting tank. Meanwhile, in order to achieve the heating effect, the heating module is connected with the front section of the air supply pipe to supply heat at the front section, so that the precursor gas in the pipe cavity passing through the front section is heated. The implementation of the heating module may be performed by various devices known to those skilled in the art, or the heating device described above may be referenced.
The temperature of the equipment is controlled by the interlayer cavity and the refrigerating liquid. In other examples, the plenum may not be configured with a mezzanine cavity, but rather cooled by an additional cooling module/device. The specific implementation of the cooling module may have a variety of implementations, and this is not specifically limited in the present application.
As an example of an application, the inventors have also proposed a method of introducing a precursor to a chemical vapor deposition furnace.
The method comprises the following steps:
step S101, a chemical vapor deposition furnace with a feeding channel is provided, and the furnace chamber of the chemical vapor deposition furnace is in a heating state.
The chemical vapor deposition furnace can be the existing equipment or the equipment with proper adjustment and structural modification on the basis. In an example, the chemical vapor deposition furnace described above is selected for use; accordingly, the feed channel is provided by the aforementioned air inlet duct 2 or air feed pipe, respectively.
The heating state of the furnace chamber is generally achieved by disposing a heating apparatus within the furnace chamber of the deposition furnace. For example, in one possible option, to avoid redundancy, the heating device is abbreviated as a heating unit such as a resistance wire or a strip, which may be disposed on the back surface (the front surface is used for placing the substrate) of the placing plate, and heats the substrate placed on the placing plate through heat transfer or heat radiation or heat convection.
Step S102, heating and cooling the feed channel sequentially along the input direction, and simultaneously conveying the precursor into the furnace chamber through the feed channel.
The input direction refers to the direction from outside the deposition furnace (furnace chamber) to inside. By heating and cooling the feed channels, the precursor being transported therein can also be passed through the feed channels, which are heated and cooled in sequence, so that their temperature is controlled below the decomposition temperature and above the temperature of the temperature field in the furnace. In other words, the temperature of the precursor itself is not too low, so that excessive disturbance to the temperature of the deposition furnace is not caused; meanwhile, the temperature of the discharging end of the feeding channel is not too high, so that the precursor can be prevented from decomposing at the end.
Wherein the temperature thereof is below the decomposition temperature mainly because the feed channel is cooled, whereby the control of the temperature of the precursor discharge at the end of the feed channel is achieved by heat conduction, thereby reaching below the decomposition temperature of the precursor. For example, when the decomposition temperature is 1000 ℃, the temperature at the discharge port position of the feed channel is made to be less than 1000 ℃ by the cooling module, so that clogging is less likely to occur when the precursor passes through the feed channel. Meanwhile, since the precursor is preheated at the initial stage of the input, the temperature of the precursor when entering the furnace is also properly raised, so that the temperature field in the furnace is not excessively strongly adversely affected. The above effects can be obtained by measuring, counting and calculating the temperature of the various zones within the deposition furnace before and after the precursor is introduced. In other words, the cooling mechanism 402 may be adaptively operated to control the temperature within a suitable range for different reaction temperatures within the deposition furnace.
More specifically, to facilitate control of the precursor temperature, in some alternative examples, the temperature may be controlled between the first temperature and the second temperature by adjusting the heating power of the feed channel such that the precursor passes through the heated feed channel. Wherein the first temperature may be 60% of the process temperature (target control temperature) of the deposition furnace, and the second temperature may be 25% of the process temperature (target control temperature) of the deposition furnace. Thereby, it is ensured that the technical effects of being less prone to clogging of the feed channel and not having too strong adverse effects on the temperature field inside the furnace, in particular in the vicinity of the air inlet, can be achieved. It is understood that the above temperature ranges are only preferred embodiments, and those skilled in the art can make corresponding selections based on the actual precursors used and the decomposition temperature based on the inventive concept of the present application.
The chemical vapor deposition furnace shown in fig. 1 was used as an example for silicon carbide chemical vapor deposition film formation to test effects.
Example 1
Silicon carbide was prepared using a chemical vapor deposition furnace having an air inlet device of the present application.
CH 3 SiCl 3 And H 2 The total intake air amount was about 900SLPM as precursor and carrier gas, respectively. The initial temperature of the precursor and carrier gas was 25 ℃, the reaction chamber temperature was set at 1400 ℃, and the pressure was 1ATM.
The temperature of the gas passing through the heating section of the air inlet channel is 800 ℃ by controlling the heating module, and the pipe wall cavity of the outlet of the second pipe body close to one side in the furnace is cooled to 1100 ℃ by controlling the cooling module.
After the carrier gas carries the precursor and the reaction gas into the reaction chamber, the precursor CH 3 SiCl 3 And decomposing at high temperature, and finally depositing carbon and silicon atoms on the graphite substrate through a complex decomposition reaction process to prepare the silicon carbide material.
In addition, since the air inlet is also affected by the radiation of heat in the furnace, the temperature continues to rise and solid deposits accumulate.
Examples 2 to 9 were carried out as in example 1, except that the cooling temperature and the heating temperature were adjusted.
Comparative example 1
The process parameters were the same as in example 1 except that the cooling module was not turned on and the heating module was not turned on.
Comparative example 2
The heating module is not started, the refrigerating module is only started, the temperature of the graphite tube is controlled to be 1100 ℃, and other process parameters are the same as those of the embodiment 1.
The thickness of the deposit at the inlet and the difference between the thickness of the product in the vicinity of the inlet and the thickness of the product at other positions were measured after 72 hours of reaction, and the results are shown in Table 1.
TABLE 1
In table 1, remarks show that the flow rate of the air inlet is greatly reduced due to severe blockage, and the film thickness does not reach the standard after deposition for 72 hours; in the cooling temperature column, the temperature of the second tube body is the same as the process temperature of the deposition furnace and 1400 ℃ because the cooling is not performed in comparative example 1.
The parameters in table 1 are defined as follows:
1. the heating temperature relates to an intake air heating operation. The heating temperature means that the gas introduced into the furnace is preheated to a first target temperature by passing through the heating module.
2. Cooling the temperature involves controlling the temperature operation of the second tube. The cooling temperature represents the temperature of the second pipe body located in the furnace, and it controls the second target temperature mainly by the flow rate of the circulating cooling liquid.
3. The process temperature refers to the target control temperature of the deposition furnace.
4. The thickness difference represents the difference in thickness of the product at a location near the air inlet from the product at other locations. The thickness difference is generated because: the temperature field of the product near the air inlet is influenced by the high-flow low-temperature gas to reduce the temperature, so that the film forming speed and quality are reduced. Therefore, the average film thickness of the product near the air inlet is compared with the film thickness of the product at the normal position; wherein "-" represents a thin.
5. The thickness of the deposit film refers to the thickness of the deposit formed by the decomposition and deposition of the precursor at the inlet of the deposition furnace. I.e. the film thickness of the solid deposit at the inlet position at the end of the second pipe, and the maximum film thickness is chosen as a reference (the film thickness is averaged over three points).
The measurement and analysis of the film thickness of the sediment by an optical microscope show that the final experimental data show that: the gas entering the cavity is preheated, so that the influence of air inlet on a thermal field around a product near the air inlet can be reduced, and the influence is smaller when the heating temperature is higher, but the temperature is strictly controlled below the decomposition temperature of the precursor, and the precursor is prevented from being decomposed and deposited in the pipeline. In addition, by cooling the second pipe, the effect of reducing the deposit at the air inlet can also be achieved, and the lower the cooling temperature, the lower the film thickness.
In order to make the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application are clearly and completely described in the foregoing description with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are some, but not all, embodiments of the application. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the detailed description of the embodiments of the application provided in the drawings is not intended to limit the scope of the application as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present application, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or those that are conventionally put in use of the product of the application, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific direction, be configured and operated in a specific direction, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
In the description of the present application, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
In the present application, all the embodiments, implementations and features of the application may be combined with each other without contradiction or conflict. In the present application, conventional equipment, devices, components, etc., are either commercially available or homemade in accordance with the present disclosure. In the present application, some conventional operations and apparatuses, devices, components are omitted or only briefly described in order to highlight the gist of the present application.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (12)
1. A chemical vapor deposition furnace, comprising:
an air intake duct, the air intake duct comprising:
the main part of the first hollow pipe body is positioned outside the deposition furnace, and the main part of the first hollow pipe body extends into the furnace wall of the deposition furnace, and is provided with a heating section and a refrigerating section which are sequentially distributed along the extending direction;
the heating mechanism is connected with the heating section in a matching way;
The refrigerating mechanism is connected with the refrigerating section in a matching way; and
the hollow second pipe body is in heat conduction connection with the refrigerating section of the first pipe body along the axial direction and is communicated with the pipe cavity to form a fluid passage, and the temperature of the second pipe body is at least controlled by the refrigerating mechanism;
a furnace body having a furnace wall and a furnace chamber defined by the furnace wall;
the furnace wall has an input port extending through the furnace chamber, a portion of the second tube is positioned in the furnace wall, a remaining portion is positioned in the furnace chamber, a refrigerant section of the second tube of the air intake conduit is held at the input port, and the furnace chamber is in communication with the fluid passageway.
2. The chemical vapor deposition furnace of claim 1, wherein the first tube body and the second tube body are detachably connected;
and/or the first pipe body and the second pipe body are connected in a mutually sleeved mode.
3. The chemical vapor deposition furnace of claim 2, wherein the second tube is at least sleeved in the cooling section of the first tube.
4. The chemical vapor deposition furnace of claim 1, wherein the lumen of the second tube has a variable diameter section, and wherein the variable diameter section is adjacent to the cooling section of the first tube, and wherein the diameter of the variable diameter section gradually decreases in a direction from the first tube to the second tube.
5. The chemical vapor deposition furnace according to claim 4, wherein the lumen of the second tube body has an equal diameter section, the equal diameter section is connected to the variable diameter section, and a connection position is located at an end of the variable diameter section in a direction from the first tube body to the second tube body.
6. The chemical vapor deposition furnace of claim 1, wherein the first tube is provided with a clasp at an end configured to contact an inner wall of the deposition furnace to allow the first tube to be hermetically connected to the deposition furnace.
7. The chemical vapor deposition furnace of claim 1, wherein the chemical vapor deposition furnace comprises:
and the objective table is connected with the furnace wall and is positioned in the furnace chamber.
8. The chemical vapor deposition furnace according to claim 7, wherein the stage has a carrier plate and a support column connected to each other, both ends of the support column being connected to the furnace wall and the carrier plate, respectively;
and/or the furnace wall has a discharge opening through the furnace chamber.
9. The chemical vapor deposition furnace of claim 8, wherein the exhaust port is connected to a hollow exhaust pipe.
10. The chemical vapor deposition furnace of claim 9, wherein the discharge port and the input port are located at both ends of the furnace body away from each other.
11. A chemical vapor deposition furnace, comprising:
a reaction chamber formed by a wall body, wherein the wall body forms a columnar extending inner cavity; along the extending direction, the wall body is provided with an air inlet through hole and an air outlet through hole which are communicated with the inner cavity at two ends far away from each other;
the object placing table is provided with an upright post and an object placing plate which is supported in the inner cavity through the upright post;
the air supply pipe is provided with a front section and a rear section which are detachably and thermally sleeved, wherein the rear section is at least partially positioned in the air inlet through hole and is in airtight connection with the wall body, and part of the front section is positioned outside the wall body;
the cooling module is connected with the part of the rear section of the air supply pipe, which is positioned in the air inlet through hole, and the part of the rear section of the air supply pipe, which is far away from the front section of the air supply pipe, stretches into the inner cavity and is used for providing cold energy or cooling the rear section at the rear section; and
and the heating module is connected with the front section of the air supply pipe and is used for providing heat at the front section.
12. A method of introducing a precursor to a chemical vapor deposition furnace, the method being performed by the chemical vapor deposition furnace of any one of claims 1-11, the method comprising:
Providing a chemical vapor deposition furnace with a feed channel, wherein the furnace chamber of the chemical vapor deposition furnace is in a heating state;
sequentially heating and cooling the feed channels in an input direction, and simultaneously conveying the precursor into the furnace chamber through the feed channels;
the precursor is temperature controlled between a first temperature and a second temperature through the heated feed channel, wherein the first temperature is 60% of the process temperature of the deposition furnace and the second temperature is 25% of the process temperature of the deposition furnace.
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Citations (8)
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|---|---|---|---|---|
| WO2003071011A1 (en) * | 2002-02-22 | 2003-08-28 | Aixtron Ag | Method and device for depositing semi-conductor layers |
| DE102008026974A1 (en) * | 2008-06-03 | 2009-12-10 | Aixtron Ag | Method and apparatus for depositing thin layers of polymeric para-xylylenes or substituted para-xylylenes |
| CN101759183A (en) * | 2009-05-31 | 2010-06-30 | 江苏中能硅业科技发展有限公司 | Polysilicon reduction furnace |
| CN103290389A (en) * | 2006-09-16 | 2013-09-11 | 韩国生产技术研究院 | Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof |
| CN204982047U (en) * | 2015-07-28 | 2016-01-20 | 河北曹妃甸汉能薄膜太阳能有限公司 | A equipment for plasma enhanced chemical vapor deposition |
| CN107058977A (en) * | 2017-04-17 | 2017-08-18 | 湖南红太阳光电科技有限公司 | A kind of PECVD film plating process and device |
| CN208980792U (en) * | 2018-10-24 | 2019-06-14 | 乐山新天源太阳能科技有限公司 | It is used to prepare the PECVD device of pellumina |
| CN113818011A (en) * | 2021-11-25 | 2021-12-21 | 新美光(苏州)半导体科技有限公司 | Chemical vapor deposition reaction equipment |
-
2021
- 2021-12-28 CN CN202111627275.4A patent/CN114277359B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003071011A1 (en) * | 2002-02-22 | 2003-08-28 | Aixtron Ag | Method and device for depositing semi-conductor layers |
| CN103290389A (en) * | 2006-09-16 | 2013-09-11 | 韩国生产技术研究院 | Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof |
| DE102008026974A1 (en) * | 2008-06-03 | 2009-12-10 | Aixtron Ag | Method and apparatus for depositing thin layers of polymeric para-xylylenes or substituted para-xylylenes |
| CN101759183A (en) * | 2009-05-31 | 2010-06-30 | 江苏中能硅业科技发展有限公司 | Polysilicon reduction furnace |
| CN204982047U (en) * | 2015-07-28 | 2016-01-20 | 河北曹妃甸汉能薄膜太阳能有限公司 | A equipment for plasma enhanced chemical vapor deposition |
| CN107058977A (en) * | 2017-04-17 | 2017-08-18 | 湖南红太阳光电科技有限公司 | A kind of PECVD film plating process and device |
| CN208980792U (en) * | 2018-10-24 | 2019-06-14 | 乐山新天源太阳能科技有限公司 | It is used to prepare the PECVD device of pellumina |
| CN113818011A (en) * | 2021-11-25 | 2021-12-21 | 新美光(苏州)半导体科技有限公司 | Chemical vapor deposition reaction equipment |
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