CN114268020A - Al with high refractive index contrast2O3 AlxGa1-xManufacturing method of As DBR VCSEL - Google Patents
Al with high refractive index contrast2O3 AlxGa1-xManufacturing method of As DBR VCSEL Download PDFInfo
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- CN114268020A CN114268020A CN202111356428.6A CN202111356428A CN114268020A CN 114268020 A CN114268020 A CN 114268020A CN 202111356428 A CN202111356428 A CN 202111356428A CN 114268020 A CN114268020 A CN 114268020A
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- 238000000034 method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 21
- 230000003647 oxidation Effects 0.000 claims abstract description 19
- 230000002093 peripheral effect Effects 0.000 claims abstract description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 15
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 13
- 238000001704 evaporation Methods 0.000 claims abstract description 12
- 230000008020 evaporation Effects 0.000 claims abstract description 12
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims abstract description 9
- 238000003486 chemical etching Methods 0.000 claims abstract description 8
- 238000009713 electroplating Methods 0.000 claims abstract description 7
- 229910016920 AlzGa1−z Inorganic materials 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
The invention relates to Al with high refractive index contrast2O3 AlxGa1‑xThe manufacturing method of the As DBR VCSEL comprises the following steps: main DBR Al over MQW layerxGa1‑xAs/AlyGa1‑yAs(x>y，0≤y<1) Medium and high Al% component AlxGa1‑xPartial complete oxidation of As to Al2O3Forming Al on the desired optical path2O3/AlyGa1‑yAs DBR stack structure by controlling the low Al% component Al closer to MQWzGa1‑zOxidation rate control center for As non-oxidized AlzGa1‑zThe size of the As current aperture; then, the peripheral portion is completely oxidized to form Al2O3Removing by chemical etching to retain Al in optical path2O3/AlyGa1‑yAn As DBR stack structure; removing the peripheral portionAl of (2)2O3The formed space is filled with ohmic metal in one or more of atomic layer deposition, sputtering, evaporation and electroplating to form a low-resistance electric conduction path.
Description
Technical Field
The invention relates to the technical field of VCSELs (vertical cavity surface emitting lasers), in particular to Al with high refractive index contrast2O3 AlxGa1-xAn As DBR VCSEL manufacturing method.
Background
The existing resonant cavity reflector is made of AlxGa1-xAs/AlyGa1-yAs is stacked epitaxially. Because of the small difference of the refractive indexes, more Al pairs are neededxGa1-xAs/AlyGa1-yAs is stacked to achieve a reflectivity of approximately 99%. And AlGaAs itself is a semiconductor material that is more difficult to dope, and has a higher resistance than metal, and the overlap of the optical resonant cavity and the electrical channel is also affected by the piezoelectric effect.
Disclosure of Invention
In view of the above, it is necessary to provide Al with high refractive index contrast2O3 AlxGa1-xAn As DBR VCSEL manufacturing method.
In order to solve the technical problems, the invention adopts the technical scheme that: al with high refractive index contrast2O3AlxGa1-xThe manufacturing method of the As DBR VCSEL comprises the following steps: main DBR Al over MQW layerxGa1-xAs/AlyGa1-yAs(x>y，0≤y<1) Medium and high Al% component AlxGa1-xAs (when x is 0.98, n is 3.01) is partially completely oxidized to convert it into Al2O3(n-1.67) forming Al on a desired optical path2O3/AlyGa1-yAs DBR stack structure with at least one layer nearest MQW in the structure As low Al% component AlzGa1-zAs forms a current aperture and controls the size of the current aperture by controlling the oxidation rate thereof, wherein the Al% composition satisfies x>Max (y, z); al formed by complete oxidation of peripheral part2O3Removing by chemical etching to retain Al in optical path2O3/AlyGa1-yAn As DBR stack structure; removing Al of peripheral portion2O3The formed space is filled with ohmic metal in one or more of atomic layer deposition, sputtering, evaporation and electroplating to form a low-resistance electric conduction path.
Further, the method also comprises the steps of epitaxial growth, platform etching and upper electrode manufacturing.
Further, alsoIncluding Al in the removed peripheral portion2O3MQW adjacent Al is protected by negative photoresist before2O3。
Further, Al in the peripheral portion2O3An etching process is adopted.
Further, the method also comprises the following steps of secondary mesa etching, lower electrode manufacturing, dielectric layer coating and welding pad evaporation.
The invention has the beneficial effects that: converting the portion of the high Al% component AlGaAs in the DBR above the MQW layer to Al2O3In the structure of one or more layers of Al nearest to the MQWzGa1-zAs(x>y and x>z) forming a current aperture in the unoxidized central portion after the oxidation process and controlling the size of the current aperture by controlling the oxidation rate thereof, so that the size of the current aperture can be conveniently adjusted and changed, filling the ohmic metal in one or more combination modes of atomic layer deposition, sputtering, evaporation and plating to form a low-resistance electrical conduction path, thereby forming a conduction path with high heat conduction, low resistance and high power conversion efficiency by the AlGaAs/ohmic metal, and reducing the Al content in the epitaxial stagexGa1-xAs/AlyGa1-yAs(x>y，0≤y<1) The number of DBR layers is logarithmic. The size relationship of Al% in the structure is x>z, mainstream of today z>x>y is different, changing the highest aluminum composition as the current aperture limiting layer.
Drawings
FIG. 1 shows a high refractive index contrast Al according to an embodiment of the present invention2O3 AlxGa1-xAl in As DBR VCSEL manufacturing methodyGa1-yA process structure flow diagram when y is 0 in As;
FIG. 2 shows a high refractive index contrast Al according to an embodiment of the present invention2O3 AlxGa1-xThe flow schematic diagram of the As DBR VCSEL manufacturing method.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the following description, taken in conjunction with the accompanying drawings and examples, describes a high refractive index contrast A according to the present inventionl2O3 AlxGa1-xThe fabrication method of the As DBR VCSEL is further described in detail. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to FIGS. 1-2, an Al with high refractive index contrast2O3 AlxGa1-xThe manufacturing method of the As DBR VCSEL comprises the following steps: main DBR Al over MQW layerxGa1-xAs/AlyGa1-yAs(x>y，0≤y<1) Medium and high Al% component AlxGa1-xPartial complete oxidation of As to Al2O3Forming Al on the desired optical path2O3/AlyGa1- yAs DBR stack structure with at least one layer nearest MQW in the structure As low Al% component AlzGa1-zAs forms a current aperture and controls the size of the current aperture by controlling the oxidation rate thereof, wherein the Al% composition satisfies x>Max (y, z); al formed by complete oxidation of peripheral part2O3Removing by chemical etching to retain Al in optical path2O3/AlyGa1-yAn As DBR stack structure; removing Al of peripheral portion2O3The formed space is filled with ohmic metal in one or more of atomic layer deposition, sputtering, evaporation and electroplating to form a low-resistance electric conduction path.
Converting the portion of high Al% component AlGaAs (n-3.01) in the DBR above the MQW layer to Al2O3With the lowest Al% component Al in the structurezGa1-zAs forms a current aperture and controls the size of the current aperture by controlling the oxidation rate thereof, so that the size of the current aperture can be conveniently adjusted and changed, ohmic metal is filled in one or more combination modes of atomic layer deposition, sputtering, evaporation and plating to form a low-resistance electrical conduction path, thereby forming a conduction path with high heat conduction, low resistance and high power conversion efficiency by AlGaAs/ohmic metal, and reducing Al in an epitaxial stagexGa1-xAs/AlyGa1-yAs(x>y，0≤y<1) The number of DBR layers is logarithmic. That is, the size relationship of Al% in the structure is x>z, mainstream of today z>x>y is different, changing the highest aluminum composition as the current aperture limiting layer.
In particular, high Al% component AlxGa1-xAs (when x is 0.98, n is 3.01, and n is a refractive index), and Al2O3The refractive index of (a) tends to be 1.67.
It will be appreciated that x > Max (y, z), i.e. x is greater than the maximum of y and z, i.e. x is greater than y and x is greater than z.
Referring to fig. 1 and 2, the epitaxial growth, the mesa etching and the upper electrode fabrication are also included.
Referring to fig. 1 and 2, Al is further included in the removed peripheral portion2O3MQW adjacent Al is protected by negative photoresist before2O3。
Referring to FIGS. 1 and 2, except for Al in the peripheral portion2O3A chemical etching process is adopted. Namely, wet etching or dry etching process can be selected according to the requirement.
Referring to fig. 1 and fig. 2, the method further includes a second mesa etching, a lower electrode manufacturing, a dielectric layer coating, and a pad evaporation.
Main DBR Al over MQW layerxGa1-xAs/AlyGa1-yAs(x>y，0≤y<1) Medium and high Al% component AlxGa1-xPartial complete oxidation of As to Al2O3Forming Al on the desired optical path2O3/AlyGa1- yAs DBR stack structure by controlling the low Al% component Al closer to MQWzGa1-zOxidation rate of As, in turn controlling center unoxidized AlzGa1-zThe size of As current aperture, wherein the Al% component satisfies x>y and x>z; al formed by complete oxidation of peripheral part2O3Removing by chemical etching to retain Al in optical path2O3/AlyGa1-yAn As DBR stack structure; removing Al of peripheral portion2O3The space formed byOne or more of atomic layer deposition, sputtering, evaporation and electroplating are combined to fill the ohmic metal to form a low-resistance electric conduction path.
As can be understood, referring to fig. 1 and fig. 2, the overall process sequentially includes: epitaxially growing to form an epitaxial structure, which generally mainly comprises an upper DBR layer, an MQW, a lower DBR layer and a substrate; a step of primary platform etching/upper electrode manufacturing, wherein the primary platform etching enables the upper DBR layer to form a primary etching table-board, the upper electrode manufacturing is to form an upper electrode on the primary etching table-board, and the electrode can be formed in a vapor deposition mode generally; forming HC-DBR (High thermal conductivity-distributed Bragg reflector) by oxidation, i.e. the main DBR Al above the MQW layerxGa1-xAs/AlyGa1- yAs(x>y，0≤y<1) Medium and high Al% component AlxGa1-xAs (when x is 0.98, n is 3.01) is partially completely oxidized to convert it into Al2O3(n-1.67) forming Al on a desired optical path2O3/AlyGa1-yAs DBR stack structure with one or more layers of Al nearest the MQW in the structurezGa1-zAs(x>y and x>z) forming a current aperture in the central portion not oxidized after the oxidation process and controlling the size of the current aperture by controlling the oxidation rate thereof, wherein the Al% component satisfies x>y and x>z; negative photoresist protection MQW near Al2O3I.e. Al exposed on the top of MQW and outside the primary etching mesa2O3Protected by a negative photoresist, which can be formed by deposition; chemical etching to remove peripheral Al2O3I.e. Al formed by complete oxidation of the peripheral part2O3Removing by chemical etching to retain Al in optical path2O3/AlyGa1-yAn As DBR stack structure; filling the ohmic metal, namely filling the ohmic metal in one or more combination modes of processes such as atomic layer deposition, sputtering, evaporation, electroplating and the like to form a low-resistance electric conduction path; etching the secondary mesa, namely etching the lower DBR part below the MQW and above the substrate to form a secondary etched mesa; bottom electrode fabricationThat is, the lower electrode is formed on the electrode contact layer (the portion between the lower DBR and the substrate) outside the secondary etching mesa.
Obviously, each pair of Al2O3/AlyGa1-yThe thickness of the As DBR stack layer satisfies the lambda/(2 n) of the resonant cavityeff) Where λ is the wavelength of the laser's main emission, neffThe equivalent refractive index of the stacked layers in each pair of DBRs for that wavelength.
As can be understood, the VCSEL is a Vertical-Cavity Surface-Emitting Laser (VCSEL for short, and also a Vertical-Cavity Surface-Emitting Laser); MQW, Multiple Quantum Well, Multiple Quantum Well; DBR, Distributed Bragg Reflector. Al is aluminum, it being understood that Al2O3That is, alumina generally means that AlGaAs is oxidized to Al in VCSEL structure2O3Mainly containing a small amount of Ga2O3GaAs or a mixture of AlAs. Ga is gallium and As is arsenic.
It should be noted that, if directional indications (such as up, down, left, right, front, and back … …) are involved in the embodiment of the present invention, the directional indications are only used to explain the relative positional relationship between the components, the movement situation, and the like in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indications are changed accordingly.
In summary, the present invention provides an Al with high refractive index contrast2O3 AlxGa1-xA method of making an As DBR VCSEL converts the high Al% component AlGaAs (n-3.01) in the DBR above the MQW layer to Al2O3With the lowest Al% component Al in the structurezGa1-zAs forms a current aperture and controls the size of the current aperture by controlling the oxidation rate thereof, so that the size of the current aperture can be conveniently adjusted and changed, and ohmic metal is filled in one or more combination modes of atomic layer deposition, sputtering, evaporation, electroplating and the like to form a low-resistance electric conduction path, thereby forming a conduction path with high heat conduction, low resistance and high power conversion efficiency by AlGaAs/ohmic metal. I.e. Al% in the structure is largeThe small relationship is x>z, mainstream of today z>x>y is different, changing the highest aluminum composition as the current aperture limiting layer.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (5)
1. Al with high refractive index contrast2O3 AlxGa1-xThe manufacturing method of the As DBR VCSEL is characterized by comprising the following steps:
main DBR Al over MQW layerxGa1-xAs/AlyGa1-yAs(x>y，0≤y<1) Medium and high Al% component AlxGa1-xPartial complete oxidation of As to Al2O3Forming Al on the desired optical path2O3/AlyGa1-yAs DBR stack structure with at least one layer nearest MQW in the structure As low Al% component AlzGa1-zAs forms a current aperture and controls the size of the current aperture by controlling the oxidation rate thereof, wherein the Al% composition satisfies x>Max(y,z)；
Al formed by complete oxidation of peripheral part2O3Removing by chemical etching to retain Al in optical path2O3/AlyGa1-yAn As DBR stack structure;
removing Al of peripheral portion2O3The formed space is filled with ohmic metal in one or more of atomic layer deposition, sputtering, evaporation and electroplating to form a low-resistance electric conduction path.
2. A high-contrast Al according to claim 12O3 AlxGa1-xThe manufacturing method of the As DBR VCSEL is characterized by further comprising epitaxial growth, platform etching and upper electrode manufacturing.
3. A high-contrast Al according to claim 12O3 AlxGa1-xThe manufacturing method of the As DBR VCSEL is characterized by further comprising the step of removing Al at the peripheral part2O3MQW adjacent Al is protected by negative photoresist before2O3。
4. A high-contrast Al according to claim 12O3 AlxGa1-xThe manufacturing method of As DBR VCSEL is characterized in that Al at the periphery part2O3An etching process is adopted.
5. A high-contrast Al according to claim 12O3 AlxGa1-xThe manufacturing method of the As DBR VCSEL is characterized by further comprising the steps of secondary mesa etching, lower electrode manufacturing, dielectric layer coating and welding pad evaporation.
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| CN202111356428.6A CN114268020B (en) | 2021-11-16 | 2021-11-16 | Al with high refractive index contrast 2 O 3 Al x Ga 1-x As DBR VCSEL manufacturing method |
| TW111138069A TWI800464B (en) | 2021-11-16 | 2022-10-06 | Fabrication Method of AlOAlxGa-xAs DBR VCSEL with High Refractive Index Contrast |
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| TWI800464B (en) | 2023-04-21 |
| TW202322505A (en) | 2023-06-01 |
| CN114268020B (en) | 2023-11-28 |
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