CN114267927B - Switchable microwave filter based on phase-change material - Google Patents
Switchable microwave filter based on phase-change material Download PDFInfo
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- CN114267927B CN114267927B CN202111562196.XA CN202111562196A CN114267927B CN 114267927 B CN114267927 B CN 114267927B CN 202111562196 A CN202111562196 A CN 202111562196A CN 114267927 B CN114267927 B CN 114267927B
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Abstract
The invention provides a switchable microwave filter based on a phase-change material, which comprises a medium substrate, a coupling structure and a phase-change control unit, wherein the coupling structure and the phase-change control unit are arranged on the upper surface of the medium substrate, one end of the coupling structure is connected with an input microstrip, the other end of the coupling structure is connected with an output microstrip, the coupling structure comprises at least one coupling structure unit, the coupling structure unit comprises a first metal patch, a second metal patch and a phase-change patch, the phase-change patch is connected between the first metal patch and the second metal patch, the phase-change patch can perform reversible phase change under the control of the phase-change control unit, the switching between a high resistance state and a low resistance state of the phase-change patch is realized, and the change of the coupling structure is controlled so as to control the switching of the working state of the filter. The switchable microwave filter is designed based on the phase-change material, and the influence of parasitic parameters of an active device is avoided.
Description
Technical Field
The invention relates to the technical field of filters, in particular to a switchable microwave filter based on a phase-change material.
Background
The microwave filter is one of essential core devices in modern communication technology, and can ensure the normal operation of communication equipment. With the development of communication systems, microwave filters have higher and higher requirements. The adjustable and controllable filtering is one of the performances required by the existing microwave filter while maintaining the effective filtering of noise and unwanted signals.
The traditional method is generally a switchable microwave filter designed based on an active tunable device, for example, a PIN diode, a varactor, a MEMS device, etc. are used, but this often introduces parasitic parameters of the device itself, and further causes the performance of the filter to deviate from the design result, which affects the use. For example, she Longfang et al designed a tunable Notch filter with an ultra-thin metal Meander Strip unit periodic array (l.ye, y.chen, z.wang, c.zhu, j.zhuo and q.h.liu, "Compact spoofsurface plasma polar on Waveguides and Notch Filters Based on membrane-Strip Units," in IEEE Photonics Technology Letters, vol.33, no.3, pp.135-138,1feb.1,2021, doi. This is because in actual measurement, the active tunable device has parasitic parameters, which affect the final design result, and the performance of the filter deviates from the original design, thereby affecting the use.
Disclosure of Invention
The present invention is directed to a switchable microwave filter based on a phase change material, so as to solve the problem of parasitic parameters of an active tunable microwave filter proposed in the above-mentioned background art.
In order to achieve the purpose, the invention provides the following technical scheme:
the switchable microwave filter based on the phase-change material comprises a medium substrate, a coupling structure and a phase-change control unit, wherein the coupling structure and the phase-change control unit are arranged on the upper surface of the medium substrate, one end of the coupling structure is connected with an input microstrip, the other end of the coupling structure is connected with an output microstrip, the coupling structure comprises at least one coupling structure unit, the coupling structure unit comprises a first metal patch, a second metal patch and a phase-change patch, the phase-change patch is connected between the first metal patch and the second metal patch, the phase-change patch can perform reversible phase change under the control of the phase-change control unit, the switching between a high resistance state and a low resistance state of the phase-change patch is realized, and the change of the coupling structure is controlled so as to control the switching of the working state of the filter.
Further, as a preferred scheme of the present invention, the coupling structure unit is a left-right symmetrical structure as a whole;
the first metal patch is a square ring metal patch with a gap, the center position of the upper side edge or the lower side edge of the square ring metal patch is broken to form a rectangular gap, and the left side and the right side of the rectangular gap respectively form a first end and a second end of the square ring metal patch;
the second metal patch is arranged inside the first metal patch and is composed of two rectangular metal patches which are vertically arranged below the first end and the second end respectively, the first rectangular metal patch is connected with the first end through a first phase change patch, and the second rectangular metal patch is connected with the second end through a second phase change patch.
Further, as a preferable scheme of the invention, the gap width between the two rectangular metal patches is the width of the rectangular gap.
Furthermore, as a preferred scheme of the invention, n coupling structure units are arranged in the coupling structure, and more than n coupling structure units of 2,2 are linearly arranged according to a set distance between the coupling structure units, so that the n-stage band-pass filter is formed.
Further, as a preferable aspect of the present invention, the coupling structure is a left-right symmetrical structure as a whole.
Further, as a preferred scheme of the invention, the phase-change patch is a vanadium dioxide film patch, the phase-change control unit is a temperature control unit, the vanadium dioxide film patch is heated to generate phase change under the control of the temperature control unit, so that the vanadium dioxide film patch is in a low-resistance state, the first metal patch and the second metal patch are connected, and the filter is switched to a filtering state; when the vanadium oxide film patch is at normal temperature, the vanadium oxide film patch is in a high-resistance state, the first metal patch and the second metal patch are disconnected, and the filter is switched to a non-filtering state.
The specific form of the temperature control unit is not limited, and any implementation mode and structure capable of realizing temperature control can be adopted, such as any one of a heating plate, a tungsten plate, a resistance wire, a local heating module and an electrode heating module.
Further, as a preferred scheme of the invention, the dielectric substrate adopts a PCB, and the dielectric constant is 3.
Further, as a preferable scheme of the present invention, the first metal patch and the second metal patch are both copper sheets.
Further, as a preferable scheme of the present invention, the input microstrip and the output microstrip both adopt transmission lines having an impedance of 50 ohms.
Through the technical scheme, the invention has the following beneficial technical effects:
the phase-change patch is used as a filter switch of the coupling structure unit by utilizing the phase-change characteristics of the phase-change material, and the phase-change patch made of the phase-change material controls the work of the filter equivalent circuit, thereby avoiding the influence of parasitic parameters of an active device.
Furthermore, the switchable microwave filter with the structure is designed, the function of switchable filtering is realized by utilizing the phase change characteristic of the phase change material vanadium dioxide and matching with the coupling structure design, and the control is convenient.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of the present invention;
FIG. 2 is a diagram of an equivalent filter circuit according to an embodiment of the present invention;
FIG. 3 is a simulation diagram of an embodiment of the present invention;
reference numbers in the figures:
1. inputting a microstrip; 2. a coupling structure unit; 3. outputting a microstrip; 4. a first metal patch; 401. a rectangular gap; 5. phase-change paster; 501. a first phase change patch; 502. a second phase change patch; 6. a second metal patch; 601. a first rectangular metal patch; 602. a second rectangular metal patch; 7. a dielectric substrate; 8. a coupling structure; 9. a phase change control unit.
The objects, features and advantages of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, an embodiment of the present invention provides a switchable microwave filter based on a phase-change material, which has a two-layer structure, including a dielectric substrate 7, a coupling structure 8 on an upper surface of the dielectric substrate 7, and a phase-change control unit 9, where the dielectric substrate 7 of the filter is rectangular. It is understood that one skilled in the art can select different shapes of dielectric substrates as desired.
One end of a coupling structure 8 is connected with an input microstrip 1, the other end of the coupling structure 8 is connected with an output microstrip 3, the coupling structure 8 comprises at least one coupling structure unit 2, and the coupling structure unit 2 comprises a first metal patch 4, a second metal patch 6 and a phase change patch 5; phase transition paster 5 is connected between first metal paster 4 and second metal paster 6, and phase transition paster 5 can take place reversible phase transition under phase transition control unit 9's control, realizes the switching of phase transition paster high resistance state and low resistance state, and the control coupling structure's change and then the operating condition of control wave filter switches.
The number of the coupling structure units 2 in the coupling structure 8 is n, and n is not less than 2,2, and the coupling structure units are arranged in a linear mode according to the set distance between the coupling structure units, so that the n-stage band-pass filter is formed. In the embodiment shown in fig. 1, there are 5 coupling structure units 2 in the coupling structure 8, which form a 5-stage band-pass filter, and the resonant frequency of each coupling structure unit is reasonably controlled, so that the function of a broadband band-pass filter can be realized.
Each coupling structure unit 2 is in a bilateral symmetry structure. The first metal patch 4 is a square ring metal patch with a slit, and the square ring metal patch with the slit can be equivalent to a series connection of an inductor and a capacitor. The center position disconnection of the upper side or the lower side of square ring metal paster forms rectangle breach gap 401, and the rectangle breach gap 401 left and right sides forms the first end and the second end of square ring metal paster respectively. The second metal patch 6 is arranged inside the first metal patch 4 and is composed of two rectangular metal patches which are vertically arranged below the first end and the second end respectively, and the width of a gap between the two rectangular metal patches is the width of the rectangular gap 401. The two rectangular metal patches are equivalent to a parallel connection of an inductor and a capacitor. The first rectangular metal patch 601 is connected with the first end through the first phase change patch 501, and the second rectangular metal patch 602 is connected with the second end through the second phase change patch 502. Referring to fig. 2, an equivalent filter circuit diagram thereof can implement the basic function of a band pass filter; the first phase change patch 501 and the second phase change patch 502 function as switches to control the operation of the filtering equivalent circuit.
In a preferred embodiment of the present invention, when designing the coupling structure, the sizes of the first metal patches of each coupling structure unit may be designed to be the same, and the sizes of the rectangular metal patches used by the second metal patches of each coupling structure unit may be designed to be different. Certainly, the design mode of the structural parameters of the coupling structure is not limited to this, and the resonant frequency of each coupling structure unit can be controlled by reasonably designing the structural dimensions of the first metal patch and the second metal patch of each coupling structure unit in the coupling structure, so that the function of the broadband band-pass filter can be realized.
In a preferred embodiment of the invention, the dielectric substrate is a PCB (printed Circuit Board), the dielectric constant is 3, the size is 30mm × 93.8mm, and the thickness is 0.5mm; the first metal patch 4 and the second metal patch 6 on the upper surface of the dielectric substrate are made of copper sheets, and the thicknesses of the copper sheets and the second metal patch are 0.135mm.
In a preferred embodiment of the present invention, a structure as shown in fig. 1 is adopted, the first phase change patch 501 and the second phase change patch 502 in each coupling structure unit both adopt vanadium dioxide film patches, the phase change control unit 9 is a temperature control unit, the vanadium dioxide film patches are heated to phase change under the control of the temperature control unit, so that the vanadium dioxide film patches are in a low resistance state, the first metal patches and the second metal patches are connected, and the filter is switched to a filtering state; when the vanadium oxide film patch is at normal temperature, the vanadium oxide film patch is in a high-resistance state, the first metal patch and the second metal patch are disconnected, and the filter is switched to a non-filtering state (namely does not work). The specific form of the temperature control unit is not limited, and any implementation mode and structure capable of realizing temperature control can be adopted, such as any one of a heating plate, a tungsten plate, a resistance wire, a local heating module and an electrode heating module.
In a preferred embodiment of the present invention, the structure shown in fig. 1 is adopted, and the input microstrip and the output microstrip both adopt transmission lines with 50 ohm impedance. The temperature control unit is a heating plate of 1cm x 1cm. The coupling structure 8 is a left-right symmetrical structure as a whole. The first metal patch of each coupling structure unit is designed to have the same structure size, the outer frame size of the square-ring metal patch with the gap is 14.88mm × 16.37mm, the inner frame size is 12.26mm × 13.9mm, and the width of the rectangular gap is 0.26mm. The first phase change patch 501 and the second phase change patch 502 are both vanadium dioxide thin film patches with the size of 0.46mm x 1.23mm. In 5 coupling structure units starting from the first coupling structure unit connected with the input microstrip 1, the width and length of the rectangular metal patch adopted by the second metal patch are 1.23mm 6.75mm, 1.23mm 6.36mm, 1.23mm 6.20mm, 1.23mm 6.36mm and 1.23mm 6.75mm in sequence, and the 5 coupling structure units are arranged in a linear mode according to fixed intervals, and the intervals are 0.17mm, 0.41mm and 0.17mm in sequence. Referring to fig. 3, which is a simulation diagram of the present embodiment, when each vanadium dioxide thin film patch is in a low resistance state (ON), the filter has a band pass function, and a 10dB pass band is 9.8GHz-10.25GHz. When each vanadium dioxide film patch is in a high-resistance state, the filter has no filtering function and conforms to the design. The filter is proved to have a switchable function.
The phase change material can be used for the filter, and can also be used for other reconfigurable microwave filters to replace structures with reconfiguration functions. The phase change material can be loaded at the joint of the microstrip line resonance structure and the branch joint thereof, the opening of the opening resonance ring and the like, namely the loading position of the active device.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may be made by those skilled in the art without departing from the principle of the invention.
Claims (8)
1. The switchable microwave filter based on the phase-change material is characterized by comprising a medium substrate, a coupling structure and a phase-change control unit, wherein the coupling structure and the phase-change control unit are arranged on the upper surface of the medium substrate, one end of the coupling structure is connected with an input microstrip, the other end of the coupling structure is connected with an output microstrip, the coupling structure comprises at least one coupling structure unit, the coupling structure unit comprises a first metal patch, a second metal patch and a phase-change patch, the phase-change patch is connected between the first metal patch and the second metal patch, the phase-change patch can perform reversible phase change under the control of the phase-change control unit, the switching between a high resistance state and a low resistance state of the phase-change patch is realized, and the change of the coupling structure is controlled so as to control the switching of the working state of the filter;
the coupling structure unit is in a left-right symmetrical structure integrally; the first metal patch is a square ring metal patch with a gap, the center position of the upper side or the lower side of the square ring metal patch is broken to form a rectangular gap, and the left side and the right side of the rectangular gap respectively form a first end and a second end of the square ring metal patch; the opening directions of the rectangular gaps of the first metal patches in the adjacent coupling structure units are opposite;
the second metal patch is arranged inside the first metal patch and consists of two rectangular metal patches which are vertically arranged below the first end and the second end respectively, the first rectangular metal patch is connected with the first end through a first phase change patch, and the second rectangular metal patch is connected with the second end through a second phase change patch; the width of the gap between the two rectangular metal patches is the width of the rectangular gap.
2. The switchable microwave filter based on phase change material of claim 1, wherein the number of the coupling structure units in the coupling structure is n, and more than 2,2 coupling structure units are linearly arranged according to the set distance therebetween, thereby forming an n-stage band pass filter.
3. The phase change material-based switchable microwave filter of claim 2, wherein the coupling structure is a left-right symmetrical structure as a whole.
4. The phase-change-material-based switchable microwave filter according to claim 1,2 or 3, wherein the phase-change patch is a vanadium dioxide thin film patch, the phase-change control unit is a temperature control unit, the vanadium dioxide thin film patch is heated to be phase-changed under the control of the temperature control unit, so that the vanadium dioxide thin film patch is in a low-resistance state, the first metal patch and the second metal patch are connected, and the filter is switched to a filtering state; when the vanadium oxide film patch is at normal temperature, the vanadium oxide film patch is in a high-resistance state, the first metal patch and the second metal patch are disconnected, and the filter is switched to a non-filtering state.
5. The switchable phase change material-based microwave filter of claim 4, wherein the temperature control unit is any one of a heating plate, a tungsten plate, a resistance wire, a local heating module, and an electrode heating module.
6. The switchable phase change material based microwave filter of claim 1,2, 3 or 5, wherein the dielectric substrate is a PCB board having a dielectric constant of 3.
7. The phase change material based switchable microwave filter of claim 6, wherein the first metal patch and the second metal patch are both copper sheets.
8. The phase change material based switchable microwave filter of claim 6, wherein the input microstrip and the output microstrip each employ a transmission line having an impedance of 50 ohms.
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|---|---|---|---|---|
| CN101599568A (en) * | 2009-07-09 | 2009-12-09 | 北京大学 | A kind of band pass filter that suppresses second harmonic |
| CN103178351A (en) * | 2013-02-27 | 2013-06-26 | 华中科技大学 | Tunable-frequency Terahertz metamaterials modulator |
| CN204947043U (en) * | 2015-09-14 | 2016-01-06 | 成都千和电子科技有限公司 | The square closed loop filter of micro-band |
| CN110767968A (en) * | 2019-10-24 | 2020-02-07 | 中国计量大学 | Single-band and three-band switchable filter based on vanadium dioxide phase change metamaterial |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101599568A (en) * | 2009-07-09 | 2009-12-09 | 北京大学 | A kind of band pass filter that suppresses second harmonic |
| CN103178351A (en) * | 2013-02-27 | 2013-06-26 | 华中科技大学 | Tunable-frequency Terahertz metamaterials modulator |
| CN204947043U (en) * | 2015-09-14 | 2016-01-06 | 成都千和电子科技有限公司 | The square closed loop filter of micro-band |
| CN110767968A (en) * | 2019-10-24 | 2020-02-07 | 中国计量大学 | Single-band and three-band switchable filter based on vanadium dioxide phase change metamaterial |
Non-Patent Citations (1)
| Title |
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| Applications of vanadium dioxide (VO2)-loaded electrically small resonators in the design of tunable filters;David Bouyge等;《The 40th European Microwave Conference》;20101101;正文第824页 * |
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