CN114256046A - Plasma processing apparatus and method of operating the same - Google Patents
Plasma processing apparatus and method of operating the same Download PDFInfo
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- CN114256046A CN114256046A CN202011004465.6A CN202011004465A CN114256046A CN 114256046 A CN114256046 A CN 114256046A CN 202011004465 A CN202011004465 A CN 202011004465A CN 114256046 A CN114256046 A CN 114256046A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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Abstract
The invention discloses a plasma processing device and a substrate processing method, wherein the device comprises: the top of the reaction chamber is provided with an opening, and the inner bottom of the reaction chamber is provided with a base which is used for bearing a substrate to be processed; a mounting substrate seated within the opening; the gas spray header is positioned below the mounting substrate and is arranged opposite to the base; an electrode positioned between the mounting substrate and the gas shower head; insulating layers respectively positioned between the mounting substrate and the electrode and between the gas shower head and the electrode; and the direct current is electrically connected with the electrode so as to enable the gas spray head to be adsorbed on the mounting substrate. The invention improves the physical contact between the gas spray header and the subsequent electrode, thereby better controlling the temperature of the gas spray header and reducing the complexity of installation.
Description
Technical Field
The invention relates to the technical field of semiconductor processing equipment, in particular to a plasma processing device and a working method thereof.
Background
With the increasing precision of semiconductor manufacturing technology, significant changes in integrated circuits have occurred, which has led to a rapid increase in the computing performance and memory capacity of computers and has driven the rapid development of peripheral industries. The semiconductor industry has also developed at a rate of doubling the number of transistors on an integrated circuit every 18 months, as predicted by moore's law. For example: the critical dimensions of transistors are also continuously shrinking and the density is continuously increasing. The corresponding integrated circuit chip manufacturing process becomes more numerous and complex, and each process of manufacturing is subject to more stringent criteria with respect to stability and uniformity.
In order to ensure the continuous stability of the process of manufacturing integrated circuit chips, the stability of the structure of the semiconductor processing device used therein, especially the stability of some key process components, needs to be ensured.
For example: the electrode structure of the existing common capacitively coupled plasma etcher is a parallel plate structure, the lower electrode is an electrostatic chuck (ESC), and the substrate to be processed is usually placed on it. The ESC is connected with a cooling device on one hand to realize the control of wafer temperature in the etching process, and is connected with a radio frequency signal on the other hand. The upper electrode is a silicon-based gas spray head (Si showerhead), the outer side of the silicon-based gas spray head is an upper grounding ring (upper grounding ring) made of silicon-based material and attached to an aluminum-based mounting substrate (mounting base) in a physical connection mode through aluminum screws and the like, the upper grounding ring is fixed to an aluminum-alloy chassis (base plate) through the aluminum screws, the aluminum-alloy chassis is fixed to the mounting substrate through a group of aluminum screws, and the mounting substrate is located on the upper surface of the cavity.
Therefore, the monocrystalline silicon electrode can provide a silicon environment for etching, ensure no pollution of other elements, the aluminum substrate provides a physical process for the monocrystalline silicon electrode through a plurality of screws, and the temperature control is realized through physical contact. However, due to the difference of the expansion coefficients between the aluminum substrate and the single crystal silicon electrode, the screw for maintaining the contact between the aluminum substrate and the single crystal silicon electrode inevitably loosens along with the increase of time, thereby causing the problems that the heat conduction and the direct current radio frequency circuit are affected and the substrate has poor yield.
Disclosure of Invention
The invention aims to provide a plasma processing device and a working method thereof, which aim to improve the physical contact between a gas spray header and an electrode, thereby realizing better temperature control and improving the yield of a substrate.
In order to achieve the above purpose, the invention is realized by the following technical scheme:
a plasma processing apparatus, comprising: the top of the reaction chamber is provided with an opening, and the inner bottom of the reaction chamber is provided with a base which is used for bearing a substrate to be processed; a mounting substrate seated within the opening; (ii) a The gas spray header is positioned below the mounting substrate and is arranged opposite to the base; an electrode positioned between the mounting substrate and the gas shower head; insulating layers respectively positioned between the mounting substrate and the electrode and between the gas shower head and the electrode; and the direct current is electrically connected with the electrode so as to enable the gas spray head to be adsorbed on the mounting substrate.
Optionally, a plurality of mounting through holes are formed in the mounting substrate; the electrode is provided with a plurality of mounting blind holes, and the mounting through holes correspond to the mounting blind holes one to one; and a first fixing piece penetrates through the mounting through hole and stops in the mounting blind hole so as to fixedly connect the mounting substrate and the electrode.
Optionally, the electrode is of a U-shaped structure, the mounting substrate is located inside the electrode, and the side wall of the electrode is connected with the side wall of the mounting substrate by using a second fixing member.
Optionally, the second fixing member is a plurality of first screws, and each first screw penetrates through a sidewall of the electrode and stops in the mounting substrate.
Optionally, the mounting substrate has a first surface and a second surface opposite to each other, a plurality of first air holes penetrating through the first surface and the second surface are arranged on the mounting substrate at intervals, a first end of each first air hole is connected to a gas source of a reaction gas, and a second end of each first air hole is communicated with the gas shower head.
Optionally, the method further comprises: the gas buffer piece is arranged above the mounting substrate, forms a closed space with the first surface and is used for buffering reaction gas transmitted from a gas path pipe of the gas source; a heater disposed around a periphery of the gas cushion; the graphite heat conducting fin is arranged between the heater and the mounting substrate, and heat generated by the heater is conducted to the gas spray header through the graphite heat conducting fin, the mounting substrate and the electrode so as to control the temperature of the gas spray header.
Optionally, the electrode has a third surface and a fourth surface opposite to each other, the second surface of the mounting substrate is in contact with the third surface, a plurality of second air holes penetrating through the third surface and the fourth surface are formed in the electrode at intervals, the first air holes and the second air holes are arranged in a one-to-one correspondence manner, one end of each of the second air holes is communicated with the second end of the first air hole, and the other end of each of the second air holes is communicated with the gas shower head.
Optionally, the method further comprises: go up the ground loop, the inward flange of going up the ground loop is equipped with an annular step, the gas shower head is located go up the inside of ground loop, its edge embarks on the annular step, through with go up the ground loop and be fixed in on the electrode, with fixed the gas shower head.
Optionally, a plurality of first through holes are formed in the edge of the electrode at intervals, a plurality of blind holes are formed in the outer edge of the upper grounding ring at intervals, and the first through holes and the blind holes are arranged in a one-to-one correspondence manner.
Optionally, the method further comprises: and each second screw penetrates through the first through hole and stops in the blind hole.
Optionally, the upper grounding ring further includes a protruding portion, the protruding portion is located on the annular step, a recessed portion is disposed on the gas shower head, and the protruding portion is matched with the recessed portion to achieve alignment between the protruding portion and the recessed portion.
Optionally, the method further comprises: and each gasket is positioned between the second screw and the mounting substrate and is respectively contacted with the second screw and the second surface of the mounting substrate.
Optionally, the surfaces of the mounting substrate except for the surface of the contact surface contacted with the gasket are not coated with the anodic oxidation and/or yttrium oxide coating, and the rest surfaces are coated with the anodic oxidation and/or yttrium oxide coating; the inner walls of the first air holes are coated with anodic oxidation and/or yttrium oxide coatings.
Optionally, the surface of the electrode and the pore walls of all the second pores are coated with an anodic oxidation and/or yttrium oxide coating; the anodized and/or yttria coating is the insulating layer.
Optionally, the surface of the annular step of the upper ground ring is coated with an anodized and/or yttria coating.
Optionally, the method further comprises: the electrode joint is arranged on one side of the electrode, and the flange is arranged on the side wall of the reaction cavity; the electrode joint is connected with the direct current power supply arranged outside the reaction cavity through the flange.
Optionally, the thickness of the gas shower head ranges from 1mm to 2 mm.
Optionally, the materials of the mounting substrate and the electrode include: an aluminum alloy.
Optionally, the insulating layer is located between the gas shower head and the mounting substrate, and the electrode is embedded in the insulating layer.
In another aspect, the present invention also provides a method of operating a plasma processing apparatus, including: the direct current power supply provides voltage within a preset range for the electrode, charges can be gathered between the electrode and the mounting substrate and between the electrode and the gas spray header to generate adsorption force, and the mounting substrate, the electrode and the gas spray header are attached and fixed.
Optionally, before the dc power supply is used to energize the electrode, the method further includes: moving a substrate to be processed into the reaction cavity; introducing argon into the reaction cavity, dissociating the argon into argon plasma, and forming a direct current loop consisting of a mounting substrate, an upper grounding ring, the argon plasma, a gas spray header and an electrode;
optionally, after the supplying the voltage of the preset range to the electrode by the dc power supply, the method further includes: delivering a process gas into the reaction chamber, and dissociating the process gas into plasma; and processing the substrate to be processed by adopting plasma.
Compared with the prior art, the invention has at least one of the following advantages:
in the plasma processing apparatus provided by the invention, the direct current is transmitted to the electrode through the direct current power supply, charges can be accumulated on the surfaces between the mounting substrate and the electrode and between the electrode and the gas spray head, and strong electrostatic adsorption force is generated, so that the mounting substrate and the electrode and the gas spray head are jointed, the adsorption force is uniform, and the adhesion between the mounting substrate and the electrode and between the electrode and the gas spray head is firm. Through controlling the voltage value of the external direct current power supply, enough electrostatic adsorption force can be ensured among the three, so that the mounting substrate, the electrode and the gas spray header can be tightly attached, the heat conduction among the three is better, and the better temperature control of the gas spray header can be realized.
Further, since the mounting substrate and the electrode are both made of an aluminum alloy, no deformation difference is generated between the two.
Because the gas spray header provided by the invention is connected with the electrode in an electrostatic adsorption mode, screws are not required to be used for fixing between the mounting substrate and the gas spray header, namely the gas spray header does not need to be additionally processed to form a mechanical fixing structure, therefore, the gas spray header can be made of a thinner silicon-based material sheet, and particularly, the thickness range of the gas spray header is 1-2 mm, so that the gas spray header provided by the invention has better flexibility. Even if the mounting substrate and the electrode deform in the temperature changing process, the mounting substrate and the electrode can be tightly attached to the electrode under the action of electrostatic adsorption force to ensure the stability of heat conduction. The gas spray head adopts a thinner silicon-based material sheet, so that the utilization rate of the silicon-based material can be improved, and the preparation cost of the upper electrode is reduced.
The side wall of the electrode and the side wall of the mounting substrate are fixedly connected through the second fixing piece, namely the electrode is U-shaped, and the uniqueness of alignment of the mounting substrate and the air holes formed in the electrode is guaranteed through arrangement of screw holes in the side wall.
The upper grounding ring provided by the invention further comprises a protruding part, the protruding part is positioned on the annular step, a concave part is arranged on the gas spray header, and the protruding part is matched with the concave part. Therefore, the gas spray header is positioned, and the gas holes of the gas spray header are aligned with the second gas holes on the electrode.
Drawings
FIG. 1 is a schematic diagram of a plasma processing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic top view of an upper ground ring of a plasma processing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of an upper ground ring at a protrusion of a plasma processing apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of an upper ground ring of a plasma processing apparatus according to an embodiment of the present invention, wherein the upper ground ring is not provided with a protrusion;
FIG. 5 is a schematic view of a plasma processing apparatus according to another embodiment of the present invention;
FIG. 6 is a schematic structural diagram of an electrode of a plasma processing apparatus according to yet another embodiment of the present invention;
fig. 7 is a flowchart illustrating a method of operating a plasma processing apparatus according to an embodiment of the present invention.
Detailed Description
The following describes a plasma processing apparatus and a method for operating the same in detail with reference to fig. 1 to 7 and the detailed description thereof. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are all used in a non-precise scale for the purpose of facilitating and distinctly aiding in the description of the embodiments of the present invention. To make the objects, features and advantages of the present invention comprehensible, reference is made to the accompanying drawings. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the implementation conditions of the present invention, so that the present invention has no technical significance, and any structural modification, ratio relationship change or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention.
Fig. 1 is a schematic structural diagram of a plasma processing apparatus according to an embodiment of the present invention.
Referring to fig. 1, the plasma processing apparatus includes: a reaction chamber 200 having an opening at the top and a susceptor 100 disposed at the inner bottom, wherein the susceptor 100 is used for carrying a substrate 101 to be processed; a mounting substrate 501 seated within the opening; a first sealing structure 601 is disposed between the mounting substrate 501 and the opening, and is used for sealing the reaction chamber 200. The electrode 502 is positioned below the mounting substrate 501; a gas shower head 300 disposed below the electrode 502 and opposite to the susceptor 100; a first insulating layer 511 located between the mounting substrate 501 and the electrode 502; a second insulating layer 512 between the electrode 502 and the showerhead 300; a dc power source 940 electrically connected to the electrode 502 for generating an adsorption force by collecting electric charges between the mounting substrate 501 and the electrode 502 and between the electrode 502 and the showerhead 300.
The gas cushion 800 is arranged above the mounting substrate 501, and a second sealing structure 602 is arranged between the gas cushion 800 and the mounting substrate 501, so that the gas cushion 800 and the first surface of the mounting substrate 501 form a closed space for buffering reaction gas introduced from a gas path pipe of the gas source; a heater 910 disposed around the periphery of the gas buffer 800; a heat conductive sheet 920 is disposed between the heater 910 and the mounting substrate 501, and heat generated by the heater 910 is conducted to the showerhead 300 through the heat conductive sheet 920, the mounting substrate 501 and the electrode 502 to control the temperature of the showerhead 300.
In this embodiment, the electrode 502 has a U-shaped structure, specifically, the electrode 502 includes a second bottom plate and a sidewall plate extending upward from an edge of the second bottom plate, and the mounting substrate 501 includes: the electrode structure comprises a first bottom plate and a bearing plate extending outwards from the edge of the first bottom plate, wherein the bearing plate is borne on the top of the reaction chamber 200 around the opening, the mounting substrate 501 is located inside the electrode 502, and the side wall of the electrode 502 is fixedly connected with the side wall of the mounting substrate 501 through a second fixing piece. Optionally, the second fixing member is a plurality of first screws 701, each of the first screws 701 penetrates through the sidewall of the electrode 502 and stops in the mounting substrate 501, that is, the first screws 701 are used to fix and mount the sidewall plate and the first bottom plate. The mounting substrate 501 is further provided with a second surface opposite to the first surface, a plurality of first air holes 503 penetrating through the first surface and the second surface are arranged on the mounting substrate 501 at intervals, a first end of each first air hole 503 is connected to an air source of reaction gas (namely, connected to the gas buffer 800 and the first surface to form a closed space), and a second end of the first air hole is communicated with the gas shower head 300.
The electrode 502 is provided with a third surface and a fourth surface which are opposite to each other, the second surface of the mounting substrate 501 is in contact with the third surface, a plurality of second air holes 504 penetrating through the third surface and the fourth surface are arranged on the electrode 502 at intervals, the first air holes 503 are arranged in one-to-one correspondence with the second air holes 504, one end of each second air hole 504 is communicated with the second end of the first air hole 503, and the other end of each second air hole 504 is communicated with the gas shower head 300. Therefore, the electrode provided by the present embodiment is U-shaped, and the arrangement of the screw hole positions of the side walls (side wall plates) ensures the uniqueness of the alignment of the mounting substrate 501 and the air holes provided in the electrode 502.
With continuing reference to fig. 2 to fig. 4, the present embodiment further includes: the inner edge of the upper grounding ring 400 is provided with an annular step 4003, the gas shower head 300 is positioned inside the upper grounding ring 400, the edge of the gas shower head is arranged on the annular step 4003 in a carrying manner, and the upper grounding ring 400 is fixed on the electrode 502 to fix the gas shower head 300.
The upper grounding ring 400 further comprises a protruding portion 4002, the protruding portion 4002 is located on the annular step 4003, a recessed portion is arranged on the gas shower head 300, and the protruding portion 4002 is matched with the recessed portion to achieve alignment between the protruding portion and the recessed portion.
A plurality of first through holes are arranged at intervals on the edge of the electrode 502, a plurality of blind holes 4001 are arranged at intervals on the outer edge of the upper grounding ring 400, and the first through holes and the blind holes 4001 are arranged in a one-to-one correspondence manner. This embodiment still includes: a plurality of second screws 702, each second screw 702 penetrating the first through hole and stopping in the blind hole 4001.
Please refer back to fig. 1, further comprising: a plurality of spacers 703, each spacer 703 being located between the second screw 702 and the mounting substrate 501 and contacting the second surface of the second screw 702 and the second surface of the mounting substrate 501, respectively, so as to form a dc circuit when the plasma processing apparatus is operated subsequently.
Please refer to fig. 1, which further includes: an electrode tap 930 disposed at one side of the electrode 502, and a flange 900 disposed on a sidewall of the reaction chamber 200; the electrode tap 930 is connected to the dc power source disposed outside the reaction chamber 200 through the flange 900.
The material of the mounting substrate 501 and the electrode 502 includes, but is not limited to, aluminum alloy.
The surface of the mounting substrate 501, except the surface of the contact surface with the gasket 703, is not coated with the anodic oxidation and/or yttrium oxide coating, and the rest of the surface is coated with the anodic oxidation and/or yttrium oxide coating; and the wall of all the first air holes 503 are coated with anodic oxidation and/or yttrium oxide coatings. The surface of the electrode 502 and the walls of all the second pores 504 are coated with an anodized and/or yttria coating. The surface of the annular step 4003 of the upper ground ring 400 is coated with an anodic oxide and/or yttrium oxide coating, thereby forming the first insulating layer and the second insulating layer. The thickness range of the gas spray header is 1 mm-2 mm. And silicon-based materials for preparing the gas spray header are subjected to double-sided polishing.
Therefore, the voltage value of the external direct-current power supply is controlled, so that sufficient electrostatic adsorption force can be ensured among the three, and the heat conduction of the upper electrode can be ensured to be in a stable state all the time. Therefore, the mounting substrate, the electrode and the gas spray header can be tightly attached, the heat conduction among the mounting substrate, the electrode and the gas spray header is better, and the better temperature control of the gas spray header can be realized. .
In the present embodiment, since the mounting substrate and the electrode are both made of aluminum alloy, no deformation difference occurs between the two. The gas spray head does not need additional processing to form a mechanical fixing structure, and the thickness of the gas spray head ranges from 1mm to 2mm, namely the gas spray head adopts a thinner silicon substrate sheet, and has better flexibility. Even if the mounting substrate and the electrode deform in the temperature changing process, the mounting substrate and the electrode can be tightly attached to the electrode under the action of electrostatic adsorption force to ensure the stability of heat conduction. The gas spray head adopts a thinner silicon-based material sheet, so that the utilization rate of the silicon-based material can be improved, and the preparation cost of the upper electrode is reduced.
The lateral wall of the electrode that this embodiment provided with the lateral wall of mounting substrate adopts the second mounting to carry out fixed connection, promptly the electrode is the U type, and through the arrangement of the screw hole position of lateral wall, the air vent that mounting substrate and electrode were equipped with is aligned the uniqueness.
The embodiment provides go up ground ring still includes a bulge, the bulge is located on the annular step, be equipped with a depressed part on the gas shower head, the bulge with the depressed part matches. Therefore, the gas spray header is positioned, and the gas holes of the gas spray header are aligned with the second gas holes on the electrode.
In summary, in the embodiment shown in fig. 1, the whole mounting process of the upper electrode is as follows: the thin gas spray head is aligned with the protruding portion on the upper grounding ring, the gas spray head is placed in the upper grounding ring, then the upper grounding ring is fixed on the electrode through a second screw, finally, a gasket is placed on the second screw of the upper grounding ring, the mounting substrate is hung on the electrode through a first screw on the side wall, and a joint of a direct-current power supply of the mounting substrate is connected with an electrode joint on the flange. Alignment is provided at each step of the overall process, which improves the accuracy of the installation and ensures alignment of the final air holes. On the other hand, all installation faces are arranged on one side of the installation substrate, and the thin gas spray header is adopted, so that compared with the traditional gas spray header, the corresponding mechanical processing of mechanical hoisting is not needed, and the installation difficulty can be greatly reduced.
Fig. 5 is a schematic structural diagram of a plasma processing apparatus according to another embodiment of the present invention.
Referring to fig. 5, in the present embodiment, the electrode 502 is a flat plate structure, and the mounting substrate 501 is provided with a plurality of mounting through holes; a plurality of mounting blind holes are formed in the electrode 502, and the mounting through holes correspond to the mounting blind holes one to one; a first fixing member 711 is used to penetrate through the mounting through hole and stop in the mounting blind hole, so as to fixedly connect the mounting substrate 501 and the electrode 502. The first fixing member 711 may be a screw, but is not limited thereto.
Fig. 6 is a schematic structural diagram of an electrode of a plasma processing apparatus according to yet another embodiment of the present invention.
Referring to fig. 6, in the present embodiment, the insulating layer 521 is located between the mounting substrate 501 and the gas shower head 300, and the electrode 522 is embedded in the insulating layer 521.
The electrode 522 is embedded in the insulating layer 521, and in this embodiment, the insulating layer 521 has a small thickness, so that the mounting substrate 501 can better transfer heat to the showerhead 300. The insulating layer 521 further includes a screw 721, and the screw 721 is screwed into the mounting substrate 501 to fix the electrode 522 to the mounting substrate 501. The mounting manner of the upper ground ring and the insulating layer 521 is the same as that of the upper ground ring and the electrode in the embodiment of fig. 1, and is not described herein again.
Accordingly, as shown in fig. 7, the present invention also provides a method of operating a plasma processing apparatus,
the method is carried out in a plasma processing apparatus as described above, the method comprising the steps of: step S1, a substrate to be processed is moved into the reaction cavity; introducing argon into the reaction cavity, dissociating the argon into argon plasma, and forming a direct current loop consisting of a mounting substrate, an upper grounding ring, the argon plasma, a gas spray header and an electrode; step S2, providing a voltage of a preset range to the electrode through the dc power supply, and collecting charges between the electrode and the mounting substrate and between the electrode and the gas shower head to generate an adsorption force, so that the mounting substrate, the electrode, and the gas shower head are attached and fixed; step S3, delivering process gas into the reaction cavity, and dissociating the process gas into plasma; and processing the substrate to be processed by adopting plasma.
In summary, in the plasma processing apparatus provided by this embodiment, charges are accumulated on the surface between the electrode and the gas shower head between the mounting substrate and the electrode, so as to generate a strong electrostatic attraction force, so that the electrode and the gas shower head are fixed between the mounting substrate and the electrode, and the attraction force is more uniform, which makes the mounting substrate, the electrode and the gas shower head firmly attached. By controlling the voltage value of the external direct current power supply, enough electrostatic adsorption force can be ensured among the three, so that the heat conduction of the upper electrode can be ensured to be in a stable state all the time. Therefore, physical contact between the gas spray header and the subsequent electrode can be improved, and better temperature control is realized. The electrostatic adsorption mode is adopted to realize the installation between the substrate and the electrode, and the electrode and the gas spray header are fixed, so that the installation complexity can be reduced.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
In the description of the present invention, it is to be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present invention and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (22)
1. A plasma processing apparatus, comprising:
the top of the reaction chamber is provided with an opening, and the inner bottom of the reaction chamber is provided with a base which is used for bearing a substrate to be processed;
a mounting substrate seated within the opening;
the gas spray header is positioned below the mounting substrate and is arranged opposite to the base;
an electrode positioned between the mounting substrate and the gas shower head;
insulating layers respectively positioned between the mounting substrate and the electrode and between the gas shower head and the electrode;
and the direct current is electrically connected with the electrode so as to enable the gas spray head to be adsorbed on the mounting substrate.
2. The plasma processing apparatus as claimed in claim 1, wherein the mounting substrate is provided with a plurality of mounting through-holes;
the electrode is provided with a plurality of mounting blind holes, and the mounting through holes correspond to the mounting blind holes one to one;
and a first fixing piece penetrates through the mounting through hole and stops in the mounting blind hole so as to fixedly connect the mounting substrate and the electrode.
3. The plasma processing apparatus as claimed in claim 1, wherein the electrode has a U-shaped configuration, the mounting substrate is positioned inside the electrode, and a second fixing member is used to connect a side wall of the electrode with a side wall of the mounting substrate.
4. The plasma processing apparatus as claimed in claim 3, wherein the second fixing member is a plurality of first screws, each of the first screws penetrating through a sidewall of the electrode and stopping within the mounting substrate.
5. The plasma processing apparatus as claimed in claim 1, wherein the mounting substrate has a first surface and a second surface opposite to the first surface, a plurality of first gas holes are provided at intervals on the mounting substrate and penetrate through the first surface and the second surface, a first end of each of the first gas holes is connected to a gas source of the reaction gas, and a second end of each of the first gas holes is communicated with the gas shower head.
6. The plasma processing apparatus as claimed in claim 5, further comprising: the gas buffer piece is arranged above the mounting substrate, forms a closed space with the first surface and is used for buffering reaction gas transmitted from a gas path pipe of the gas source;
a heater disposed around a periphery of the gas cushion; a graphite heat-conducting fin is arranged between the heater and the mounting substrate,
the heat generated by the heater is conducted to the gas spray header through the graphite heat-conducting fin, the mounting substrate and the electrode so as to control the temperature of the gas spray header.
7. The plasma processing apparatus as claimed in claim 5, wherein the electrode has a third surface and a fourth surface opposite to each other, the second surface is in contact with the third surface, a plurality of second air holes penetrating the third surface and the fourth surface are spaced apart from each other on the electrode, the first air holes and the second air holes are arranged in a one-to-one correspondence, one end of each of the second air holes is communicated with the second end of the first air hole, and the other end thereof is communicated with the gas shower head.
8. The plasma processing apparatus as claimed in claim 7, further comprising: go up the ground loop, the inward flange of going up the ground loop is equipped with an annular step, the gas shower head is located go up the inside of ground loop, its edge embarks on the annular step, through with go up the ground loop and be fixed in on the electrode, with fixed the gas shower head.
9. The plasma processing apparatus as claimed in claim 8, wherein a plurality of first through holes are provided at intervals on an edge of the electrode, a plurality of blind holes are provided at intervals on an outer edge of the upper ground ring, and the first through holes are provided in one-to-one correspondence with the blind holes.
10. The plasma processing apparatus as claimed in claim 9, further comprising: and each second screw penetrates through the first through hole and stops in the blind hole.
11. The plasma processing apparatus of claim 10, wherein the upper ground ring further comprises a protrusion, the protrusion being located on the annular step, the showerhead having a recess, the protrusion mating with the recess to achieve alignment therebetween.
12. The plasma processing apparatus as claimed in claim 11, further comprising: and each gasket is positioned between the second screw and the mounting substrate and is respectively contacted with the second screw and the second surface of the mounting substrate.
13. The plasma processing apparatus according to claim 12, wherein the surface of the mounting substrate other than the surface of the contact surface with the gasket is not coated with an anodized and/or yttria coating, and the other surface is coated with an anodized and/or yttria coating; the inner walls of the first air holes are coated with anodic oxidation and/or yttrium oxide coatings.
14. The plasma processing apparatus according to claim 13, wherein the surface of the electrode and the wall of all the second gas holes are coated with an anodic oxidation and/or yttrium oxide coating; the anodized and/or yttria coating is the insulating layer.
15. The plasma processing apparatus of claim 14, wherein a surface of the annular step of the upper ground ring is coated with an anodized and/or yttria coating.
16. The plasma processing apparatus as claimed in claim 1, further comprising: the electrode joint is arranged on one side of the electrode, and the flange is arranged on the side wall of the reaction cavity; the electrode joint is connected with the direct current power supply arranged outside the reaction cavity through the flange.
17. The plasma processing apparatus of claim 1, wherein the gas shower head has a thickness in a range of 1mm to 2 mm.
18. The plasma processing apparatus of claim 1, wherein the materials of the mounting substrate and the electrode comprise: an aluminum alloy.
19. The plasma processing apparatus according to claim 1, wherein the insulating layer is located between the gas shower head and a mounting substrate, and the electrode is buried in the insulating layer.
20. A method of operating a plasma processing apparatus, comprising:
the electrodes are supplied with a voltage of a preset range by a direct current power supply,
electric charges are accumulated between the electrode and the mounting substrate and between the electrode and the gas shower head to generate adsorption force, so that the mounting substrate, the electrode and the gas shower head are attached and fixed.
21. The method according to claim 20, wherein the step of controlling the plasma processing apparatus,
before the direct current power supply is used for electrifying the electrode, the method further comprises the following steps:
a substrate to be processed is moved into the reaction cavity and is placed on the base;
and introducing argon into the reaction cavity, dissociating the argon into argon plasma, and forming a direct current loop consisting of the mounting substrate, the upper grounding ring, the argon plasma, the gas spray header and the electrode.
22. The method of claim 20, wherein after providing a predetermined range of voltage to said electrode via said dc power supply, further comprising:
delivering process gas into the reaction cavity, and dissociating the process gas into plasma;
and processing the substrate to be processed by adopting the plasma.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011004465.6A CN114256046A (en) | 2020-09-22 | 2020-09-22 | Plasma processing apparatus and method of operating the same |
| TW110129044A TWI817173B (en) | 2020-09-22 | 2021-08-06 | Plasma treatment device and working method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011004465.6A CN114256046A (en) | 2020-09-22 | 2020-09-22 | Plasma processing apparatus and method of operating the same |
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| CN114256046A true CN114256046A (en) | 2022-03-29 |
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| CN202011004465.6A Pending CN114256046A (en) | 2020-09-22 | 2020-09-22 | Plasma processing apparatus and method of operating the same |
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| TW (1) | TWI817173B (en) |
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| Publication number | Publication date |
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| TW202230432A (en) | 2022-08-01 |
| TWI817173B (en) | 2023-10-01 |
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