CN114071040A - Image sensor and method for reading out signals - Google Patents
Image sensor and method for reading out signals Download PDFInfo
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- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
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- H—ELECTRICITY
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Abstract
The present application provides an image sensor and a method for reading out a signal of the image sensor, the image sensor comprising: the receiving module comprises a pixel array and a receiving module, wherein the pixel array is used for receiving an optical signal; a readout module for reading out a first pixel group signal in the pixel array; a latch module, configured to latch an address of a first pixel in the first pixel group when the readout module reads out the first pixel group signal; wherein the first pixel is a pixel which receives the optical signal first. By arranging the latch module in the image sensor, when a plurality of pixels in a group of pixel signals receive optical signals, the address of the pixel which receives the optical signal firstly is latched, namely, the time information of the pixel which receives the optical signal firstly is used as the stop information of the TDC of the subsequent circuit, thereby avoiding false triggering in the pixel array and improving the reliability of ranging.
Description
Technical Field
The present disclosure relates to the field of detection technologies, and in particular, to an image sensor and a method for reading out signals.
Background
Time of flight (TOF) is a method of finding a distance to an object by continuously transmitting light pulses to the object, receiving light returning from the object with a sensor, and detecting the Time of flight (round trip) of the light pulses. Direct Time of flight (DTOF) is one of TOF, and the DTOF technology directly obtains the target distance by calculating the transmitting and receiving Time of an optical pulse, and has the advantages of simple principle, good signal-to-noise ratio, high sensitivity, high accuracy and the like, and receives more and more attention.
Meanwhile, Complementary Metal Oxide Semiconductor (CMOS) image sensor technology provides an effective method for recording measurement signals in real time at a high speed. A CMOS image sensor applying DTOF technology is very advantageous for acquiring a three-dimensional (3D) range image in a time-critical system.
Generally, a CMOS image sensor includes a photosensitive area Array (Pixel Array), a Timing control unit, a time-to-Digital Converter (TDC), a data processing unit, and the like. The pixel array is used for completing photoelectric conversion and converting photons into electrons; the time sequence control unit is used for controlling the reading and the transmission of the electric signals; the TDC is used to record the time stamps of the transmission and reception times; the data processing unit is used for processing the electric signals in the pixel array.
Generally, a CMOS image sensor (i.e., a 3D image sensor) carrying distance information may use a DTOF technology, in which a pixel array detects an optical signal using Single Photon Avalanche photodiodes (SPADs), i.e., pixels containing SPADs (Single Photon Avalanche photodiodes) are arranged in a matrix form. In SPAD, when a photon enters the high electric field PN junction region while a voltage higher than the breakdown voltage is applied, avalanche amplification occurs. By detecting the instant when the current instantaneously flows, the distance can be measured with high accuracy.
However, as the number of pixels in the pixel array increases, the pixel signals in the array are read out in a column readout manner, and a plurality of pixels in a column can be multiplexed with one TDC unit. If a plurality of pixels connected in a TDC unit receive the optical signal at the same time and are subjected to avalanche breakdown, the TDC cannot distinguish the pixels simultaneously excited, and the test is discarded, i.e., a false triggering phenomenon occurs.
Therefore, it is desirable to provide a pixel circuit that can reduce the test data discarded during false triggering, and improve the reliability of ranging.
Disclosure of Invention
An object of the present application is to provide an image sensor and a method for reading out a signal, so as to solve the problem of low reliability of the conventional distance measurement.
In order to achieve the above purpose, the technical solutions adopted in the embodiments of the present application are as follows:
in a first aspect, an embodiment of the present application provides a method for reading out a signal by an image sensor, including: the pixel array receives an optical signal; reading out the first pixel group signal, the first pixel group being composed of a plurality of pixels in the pixel array; when a first pixel group signal is read out, locking the address of a first pixel in the first pixel group and outputting the address to a pixel address line; wherein the first pixel is one of the pixels of the pixel array that first receives the optical signal.
Optionally, the first pixel group is a pixel group formed by pixels in the same column in the pixel array.
Optionally, the pixel address line has only one valid bit.
Optionally, the pixel array receives a light signal, including that a part of the pixels in the first pixel group receive the light signal.
In a second aspect, an embodiment of the present application provides an image sensor, including: the receiving module comprises a pixel array and a receiving module, wherein the pixel array is used for receiving an optical signal; a readout module for reading out a first pixel group signal in the pixel array; a latch module, configured to latch an address of a first pixel in the first pixel group when the readout module reads out the first pixel group signal; wherein the first pixel is a pixel which receives the optical signal first.
Optionally, the first pixel group is formed by the same column of pixels in the image sensor.
Optionally, the device further comprises an address line, the first pixel group corresponds to a first address line, the latch device is connected with the first address line, and the address line of the first pixel group has only one valid bit.
Optionally, a part of the pixels in the first pixel group receive light signals.
The beneficial effect of this application is: according to the method and the device, the latch module is arranged in the image sensor, when a plurality of pixels in a group of pixel signals receive optical signals, the address of the pixel which receives the optical signals firstly is latched, namely, the time information of the pixel which receives the optical signals firstly is used as the stop information of the TDC of the subsequent circuit, so that the false triggering in the pixel array is avoided, and the reliability of ranging is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a block diagram of an image sensor according to an embodiment of the present disclosure;
fig. 2 is a circuit block diagram of an image sensor according to an embodiment of the present disclosure;
FIG. 3 is a block diagram of another image sensor provided in an embodiment of the present application;
fig. 4 is a connection diagram of a latch module according to an embodiment of the present application;
fig. 5 is a circuit diagram of a latch module according to an embodiment of the present disclosure;
fig. 6 is a method for reading out a signal of an image sensor according to an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
Specific embodiments of the present application will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the block diagram of an image sensor 100 provided in the present application includes a receiving module 101, a readout module 102, and a latch module 103. Circuit modules with other functions may also be included, and the present application is not limited in this regard.
The receiving module 101 is configured to receive an optical signal returned by an object to be tested, and the receiving module may be a pixel array or an array formed by combining a plurality of SPADs and a part of logic circuits. The logic circuit of the SPAD may include a quenching circuit for quenching the avalanche state of the SPAD so that the SPAD may receive the optical signal again and reach the avalanche state.
The readout module 102 is configured to perform readout processing on the signals in the receiving module 101, and for example, the readout module 102 may be a signal processing circuit including a TDC module, and may also include a timing control circuit that reads out pixels in the receiving module 101, for example, a row-selected column readout circuit that selects pixels in a column as a unit and simultaneously reads out pixel signals in a row may be selected.
The latch module 103 is configured to store an address of the avalanche triggered pixel in the receiving module 101, that is, an address of a pixel that receives the optical signal first. The latch module 103 may be connected to the receiving module through an address bus to store addresses of pixels. The readout module 102 may be connected to the receiving module 101 through a signal line to read signals of the pixels. The present application does not specifically limit the connection manner.
By arranging the latch module 103 to store the address of the pixel array in the image sensor, the pixel address which receives the optical signal firstly is ensured to be stored by the latch module 103, the occurrence of the false triggering condition of a plurality of pixels in a group of pixels is avoided, and the ranging reliability of the image processor is improved.
As another embodiment, a group of pixels may be formed by a column of pixels in the image sensor, or may be formed by a portion of pixels in a column of pixels in the image sensor, as shown by the dotted lines in fig. 2.
The image sensor 200 includes a pixel array 201, where the pixel array 201 is composed of a plurality of pixels, the pixel array includes an address line and a signal line, the address line is used for transmitting pixel address information of the pixel array 201, and the signal line is used for transmitting signals of the pixels in the pixel array 201. The address line may be used to connect the latch module 202, and the latch module 202 stores address information of a pixel, which receives the optical signal first, in a group of pixels; the signal line may be used to connect the readout module 203 to read out the signal of the pixel of the group of pixels that first received the optical signal, e.g. to read out the avalanche current of the pixel.
In addition, the image sensor 200 may further include a processing circuit 204 for processing pixel information in the pixel array 201.
Referring to fig. 3, another image sensor 300 provided in the present application will be described in detail by taking an example in which all pixels in a same column are a set of pixels, a latch module is formed by a set of latches, and a read module is formed by a set of TDCs.
The pixel array 301 includes an array of a plurality of pixels, pixel address lines (shown by thick solid lines) and pixel signal lines (shown by broken lines) connected in a column manner. The pixel address line is connected to a latch module formed by 9 latches, where each latch is connected to an address line of a column of pixels, that is, latch 1 is connected to a first column of pixel address lines in pixel array 301 for storing an address of the first column of pixels, latch 2 is connected to a second column of pixel address lines in pixel array 301 for storing an address of the second column of pixels, and so on, which will not be described herein again.
The pixel signal line is connected to a readout module formed by 9 TDC circuits, where each TDC is connected to a signal line of a column of pixels, that is, TDC1 is connected to a signal line of a first column of pixels in the pixel array 301 for recording a timestamp of a first pixel in the first column of pixels receiving the optical signal, TDC2 is connected to a signal line of a second column of pixels in the pixel array 301 for recording a timestamp of a first pixel in the second column of pixels receiving the optical signal, and so on, which are not described herein again.
In addition, the logic processing circuit 302 is used for processing other information of the pixel signals in the pixel array 301 in the image sensor 300, such as color information, gray scale information, and the like.
Next, the connection relationship and specific implementation of the latch circuit provided in the present application are described in detail with reference to fig. 4 and 5.
As shown in fig. 4, the first pixel group 400 is composed of a plurality of pixels, each pixel is composed of an SPAD and a quenching circuit connected thereto, the plurality of pixels form the first pixel group, each pixel is connected to the latch module 402, for example, four pixels form a four-bit address bus, and the four-bit address lines are respectively <0>, <1>, <2>, <3> and are connected to the latch module 402.
As shown in fig. 5, the address bus 500 may be input to a multi-input or gate circuit through four switches, the output of which is connected to a D flip-flop, the output of which is fed back to the address bus 500 for controlling the switches transmitting in the address bus.
For example, the pixel corresponding to the <0> bit address line in the address bus 500 is the pixel which receives the optical signal first, that is, the <0> bit address line is high, at this time, all switches in the address bus are closed, the high level is transmitted to the input of the D flip-flop through the or gate, when the clock rising edge of the D flip-flop arrives, the output end Q is also high level, which is fed back to the address bus 500 to open all switches, and at this time, the addresses of the remaining pixels which receive the optical signal cannot be stored, so as to achieve the purpose of latching the address of the <0> bit address line.
Therefore, the address of the pixel array in the image sensor is stored by the latch device, the pixel address which receives the optical signal firstly is ensured to be stored, the occurrence of the condition that a plurality of pixels in a group of pixels are triggered by mistake is avoided, and the ranging reliability of the image processor is improved.
It should be noted that the above circuit is only one embodiment of the latch circuit of the present application, and the present application does not limit the implementation of the latch circuit.
In addition, the present application also provides a method for reading out signals by an image sensor, as shown in fig. 6.
S601, the pixel array receives the optical signal.
The pixel array receives the optical signal returned by the object to be measured, which may be a received optical signal of a part of pixels in the pixel array, or a received optical signal of all pixels in the pixel array, and this application is not limited in this respect. Partial pixel receiving optical signals can be realized by closing partial pixels in the pixel array, and the power consumption of the pixel array can be reduced.
S602, reading out a first pixel group signal, where the first pixel group is composed of a plurality of pixels in the pixel array.
The reading out of the first pixel group signal may be through a pixel signal line, and the first pixel group may be composed of a part of pixels in a column of pixels in the array, or may be composed of all pixels in a column of pixels in the array, which is not specifically limited in this application. The grouping mode is the same as the TDC sharing mode, i.e., one pixel group corresponds to one TDC circuit.
S603, when the first pixel group signal is read out, locking the address of the first pixel in the first pixel group, and outputting the address to the pixel address line, where the first pixel is the first pixel in the pixel array to receive the optical signal.
When the pixel group signal is read to the TDC circuit to record the timestamp, the pixel address of the pixel which receives the optical signal firstly in the pixel group is locked and transmitted to the pixel address line, and at the moment, the pixel address line cannot be rewritten even if other pixel signals receive the optical signal, so that false triggering in the pixel array is avoided, and the reliability of ranging is improved.
The method is applied to the detection device provided in the foregoing embodiment, and the implementation principle and technical effect are similar, which are not described herein again.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (8)
1. A method for image sensor readout of signals, comprising:
the pixel array receives an optical signal;
reading out a first pixel group signal, the first pixel group consisting of a plurality of pixels in the pixel array;
when a first pixel group signal is read out, locking the address of a first pixel in the first pixel group and outputting the address to a pixel address line;
wherein the first pixel is one of the pixels of the pixel array that first receives the optical signal.
2. The method of claim 1, wherein the first pixel group is a pixel group of pixels in a same column of the pixel array.
3. The method of claim 2, wherein the pixel address line has only one valid bit.
4. The method of claim 3, wherein the array of pixels receives an optical signal, including a portion of the pixels in the first group of pixels receiving the optical signal.
5. An image sensor, comprising:
the receiving module comprises a pixel array and a receiving module, wherein the pixel array is used for receiving an optical signal;
a readout module for reading out a first pixel group signal in the pixel array;
a latch module, configured to latch an address of a first pixel in the first pixel group when the readout module reads out the first pixel group signal;
wherein the first pixel is a pixel which receives the optical signal first.
6. The apparatus of claim 5, wherein the first group of pixels is comprised of a same column of pixels in the image sensor.
7. The apparatus of claim 6, further comprising an address line, the first pixel group being connected to a first address line, the latch being connected to the first address line, the address line of the first pixel group having only one valid bit.
8. The apparatus of claim 7, wherein a portion of the pixels in the first group of pixels receive light signals.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023231838A1 (en) * | 2022-05-31 | 2023-12-07 | 华为技术有限公司 | Chip, dynamic vision sensor and method for outputting pixel information |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106124471A (en) * | 2016-07-19 | 2016-11-16 | 天津大学 | Time-domain fluorescent life-span imaging arrangement and life test acquisition methods |
| CN106165399A (en) * | 2014-04-07 | 2016-11-23 | 三星电子株式会社 | High-resolution, high frame per second, lower powered imageing sensor |
| CN106657826A (en) * | 2016-12-08 | 2017-05-10 | 中国科学院上海高等研究院 | Single photon avalanche diode type pixel circuit |
| CN108036861A (en) * | 2017-11-15 | 2018-05-15 | 深圳技术大学（筹） | A kind of single-photon detector of shared digital quantizer |
| CN110235024A (en) * | 2017-01-25 | 2019-09-13 | 苹果公司 | SPAD detector with modulation sensitivity |
| CN110596721A (en) * | 2019-09-19 | 2019-12-20 | 深圳奥锐达科技有限公司 | Flight time distance measuring system and method of double-shared TDC circuit |
| CN110716415A (en) * | 2018-07-11 | 2020-01-21 | 台湾积体电路制造股份有限公司 | Self-calibrating time-to-digital converter integrated circuit |
| US20200057150A1 (en) * | 2018-08-16 | 2020-02-20 | Fraunhofer- Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Apparatus and method for tdc sharing in run time-based distance measurements |
| CN111200710A (en) * | 2018-10-31 | 2020-05-26 | 英飞凌科技股份有限公司 | Image sensor with interleaved retention for single readout depth measurement |
-
2020
- 2020-07-31 CN CN202010759151.0A patent/CN114071040A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106165399A (en) * | 2014-04-07 | 2016-11-23 | 三星电子株式会社 | High-resolution, high frame per second, lower powered imageing sensor |
| CN106124471A (en) * | 2016-07-19 | 2016-11-16 | 天津大学 | Time-domain fluorescent life-span imaging arrangement and life test acquisition methods |
| CN106657826A (en) * | 2016-12-08 | 2017-05-10 | 中国科学院上海高等研究院 | Single photon avalanche diode type pixel circuit |
| CN110235024A (en) * | 2017-01-25 | 2019-09-13 | 苹果公司 | SPAD detector with modulation sensitivity |
| CN108036861A (en) * | 2017-11-15 | 2018-05-15 | 深圳技术大学（筹） | A kind of single-photon detector of shared digital quantizer |
| CN110716415A (en) * | 2018-07-11 | 2020-01-21 | 台湾积体电路制造股份有限公司 | Self-calibrating time-to-digital converter integrated circuit |
| US20200057150A1 (en) * | 2018-08-16 | 2020-02-20 | Fraunhofer- Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Apparatus and method for tdc sharing in run time-based distance measurements |
| CN110857989A (en) * | 2018-08-16 | 2020-03-03 | 弗劳恩霍夫应用研究促进协会 | Apparatus and method for TDC sharing in runtime-based distance measurement |
| CN111200710A (en) * | 2018-10-31 | 2020-05-26 | 英飞凌科技股份有限公司 | Image sensor with interleaved retention for single readout depth measurement |
| CN110596721A (en) * | 2019-09-19 | 2019-12-20 | 深圳奥锐达科技有限公司 | Flight time distance measuring system and method of double-shared TDC circuit |
Non-Patent Citations (1)
| Title |
|---|
| CHAO ZHANG等: "A CMOS SPAD Imager with Collision Detection and 128 Dynamically Reallocating TDCs for Single-Photon Counting and 3D Time-of-Flight Imaging", 《SENSORS》, pages 1 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023231838A1 (en) * | 2022-05-31 | 2023-12-07 | 华为技术有限公司 | Chip, dynamic vision sensor and method for outputting pixel information |
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