CN114047578B - Waveguide layer and cross waveguide - Google Patents
Waveguide layer and cross waveguide Download PDFInfo
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- CN114047578B CN114047578B CN202210032807.8A CN202210032807A CN114047578B CN 114047578 B CN114047578 B CN 114047578B CN 202210032807 A CN202210032807 A CN 202210032807A CN 114047578 B CN114047578 B CN 114047578B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
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Abstract
The application belongs to the technical field of optical waveguides, and discloses a waveguide layer and a cross waveguide; the waveguide layer comprises two waveguides which are vertically crossed, the shapes and the sizes of the two waveguides are the same, and the central points of the two waveguides are overlapped; the waveguide is in a biaxial symmetric structure, the symmetric axes of the waveguide comprise a first symmetric axis passing through the central point along the length direction and a second symmetric axis passing through the central point along the width direction, and the first symmetric axis is vertical to the second symmetric axis; the waveguide comprises a widened part and two equal-width parts respectively arranged at two ends of the widened part, the widths of any cross sections of the equal-width parts are the same, and a specific relation exists between the distance from the point of the side edge of the widened part to the second symmetry axis and the distance from the point of the side edge to the first symmetry axis; the crossing waveguide comprises the waveguide layer; the waveguide layer and the crossed waveguide can effectively reduce transmission loss and crosstalk in 1310nm optical communication bands.
Description
Technical Field
The application relates to the technical field of optical waveguides, in particular to a waveguide layer and a cross waveguide.
Background
When a plurality of optical devices are connected with each other, waveguide crossing often occurs, and then aiming at a waveguide crossing point part, a crossed waveguide is needed to achieve the purposes of high-efficiency propagation of light waves and low crosstalk among waveguides; if two optical waveguides of constant width are used to directly intersect, the light transmission efficiency will be greatly lost due to diffraction at the waveguide intersection.
Because the intensity of the diffraction effect of the waveguide cross point is in negative correlation with the widths of the two waveguides, most of the cross waveguides are designed in a structure with the waveguide width gradually increasing, but the problems of large transmission loss, large crosstalk and the like still exist due to the unreasonable design of the waveguide width gradual change mode.
Disclosure of Invention
It is an object of the present application to provide a waveguide layer and a cross waveguide which can effectively reduce transmission loss and crosstalk in the 1310nm optical communication band.
In a first aspect, the application provides a waveguide layer, which comprises two waveguides vertically intersected, wherein the two waveguides have the same shape and size, and the central points of the two waveguides are overlapped; the waveguide is of a biaxial symmetrical structure, the symmetry axes of the waveguide comprise a first symmetry axis passing through the central point along the length direction and a second symmetry axis passing through the central point along the width direction, and the first symmetry axis is perpendicular to the second symmetry axis;
the waveguide comprises a widened part and two equal-width parts respectively arranged at two ends of the widened part, the widths of the equal-width parts on any cross section are the same, and the following relation exists between the distance from the point of the side edge of the widened part to the second symmetry axis and the distance from the point of the side edge to the first symmetry axis:
wherein the content of the first and second substances,
the distance of the side edge of said widened portion from a point to said second axis of symmetry,
the distance of the side edge of the widening from a point to the first axis of symmetry,
being half the length of said widening,
the half width of the equal-width part,
the central half width of the widening.
The two waveguides of the waveguide layer comprise the widening parts, and the width of the widening parts is designed reasonably in the gradual change mode, so that the light waves are gathered at the intersection points of the waveguides, the diffraction effect of the light waves at the intersection points of the waveguides is effectively eliminated, the transmission loss is reduced, and the 1310nm optical communication waveband has smaller transmission loss and smaller crosstalk.
Preferably, the central half width of the widening is 0.75 μm and the half length of the widening is 3.5 μm.
Therefore, the waveguide layer has a compact structure, and when the waveguide layer is applied to the crossed waveguide, the volume of the crossed waveguide is favorably reduced, and the miniaturization design of a photoelectric integrated circuit is favorably realized.
Preferably, the waveguide has a thickness of 0.22 μm and the equal-width portions have a width of 0.45 μm.
Thereby meeting the requirements of the interface general standard of the crossed waveguide.
Preferably, a cross-section of the waveguide perpendicular to the first axis of symmetry is rectangular.
In a second aspect, the present application provides an intersecting waveguide comprising a substrate and further comprising a waveguide layer as described above, said waveguide layer being provided on an upper surface of said substrate.
Two waveguides of the waveguide layer of the crossed waveguide comprise widening parts, the design of the gradual change mode of the width of the widening parts is reasonable, and the light waves can be gathered at the intersection points of the waveguides, so that the diffraction effect of the light waves at the intersection points of the waveguides is effectively eliminated, the transmission loss is reduced, and the 1310nm optical communication waveband has smaller transmission loss and smaller crosstalk.
Preferably, the refractive index of the substrate is lower than the refractive index of the waveguide layer, which is higher than the refractive index of air.
Preferably, the refractive index of the waveguide layer is 3.45 and the refractive index of the substrate is 1.45.
Preferably, the substrate is made of silicon dioxide and the waveguide layer is made of silicon.
Preferably, the upper surface of the waveguide layer is provided with a cladding layer having a refractive index lower than that of the waveguide layer.
Preferably, the cladding is made of silica.
Has the advantages that:
the application provides a waveguide layer and cross waveguide, two waveguides of waveguide layer wherein all include the widen portion, and the gradual change mode design of the width of widen portion is reasonable, can make the light wave gather together at the intersect of waveguide to effectively eliminate the diffraction effect of light wave at the waveguide intersect, reduced transmission loss, have less transmission loss and less crosstalk at 1310nm optical communication wave band.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the application.
Drawings
Fig. 1 is a schematic structural diagram of a waveguide layer provided in an embodiment of the present application.
Fig. 2 is a schematic structural diagram of a waveguide layer provided in an embodiment of the present application.
Fig. 3 is a schematic structural diagram of an intersecting waveguide provided in an embodiment of the present application.
Fig. 4 is a simulation calculation result of crosstalk of the crossed waveguide according to the embodiment of the present application.
Fig. 5 is a simulation calculation result of the optical transmission efficiency of the crossed waveguide provided in the embodiment of the present application.
Fig. 6 shows the variation of the optical transmission efficiency of the crossed waveguide according to the wavelength of the optical communication wave provided in the embodiment of the present application.
Description of reference numerals: 1. a waveguide; 101. a widening section; 102. equal width parts; 2. a first axis of symmetry; 3. a second axis of symmetry; 100. a waveguide layer; 200. a substrate.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
For convenience of description, the width direction in this application is the left-right direction in fig. 2, the length direction is the up-down direction in fig. 2, and the thickness direction is the direction perpendicular to the sheet of fig. 2.
Referring to fig. 1-2, fig. 1 is a waveguide layer 100 in some embodiments of the present application, which includes two waveguides 1 intersecting perpendicularly, where the two waveguides 1 have the same shape and size, and central points O of the two waveguides 1 coincide; the waveguide 1 is a biaxial symmetric structure, and its symmetric axes include a first symmetric axis 2 passing through the center point O along the length direction and a second symmetric axis 3 passing through the center point O along the width direction (i.e. the waveguide 1 is symmetric about the first symmetric axis 2 and also symmetric about the second symmetric axis 3), and the first symmetric axis 2 is perpendicular to the second symmetric axis 3 (thus, two waveguides 1 are rotationally symmetric at 90 °;
as shown in fig. 2, the waveguide 1 includes a widened portion 101 and two equal-width portions 102 respectively disposed at both ends of the widened portion 101 in the longitudinal direction, the widths of the equal-width portions 102 are the same in any cross section (a section perpendicular to the first axis of symmetry 2), and the following relationship exists between the distance from a side edge point of the widened portion 101 to the second axis of symmetry 3 and the distance from the side edge point to the first axis of symmetry 2 (the side edge point refers to a point on the other edge except for the end portion connected to the equal-width portion 102, and the relationship exists at any one of the side edge points):
wherein the content of the first and second substances,
the distance of the side edges of the widening 101 from the second axis of symmetry 3 along a point,
the distance of the side edge points of the widening 101 from the first axis of symmetry 2,
is half the length of the widened portion 101 (i.e. half the length of the widened portion 101),
is the half width of the constant width portion 102 (i.e., half the width of the constant width portion 102, which is also equal to the half width of the end portion of the widened portion 101),
the central half width of the widened portion 101 (i.e. half the cross-sectional width of the widened portion 101 at the second axis of symmetry 3).
It should be noted that the above description of the structure of the waveguide 1 is directed to the description of the structure of an arbitrary cross section of the waveguide 1 in the thickness direction.
The two waveguides 1 of the waveguide layer 100 both include the widening portion 101, and the design of the gradual change mode of the width of the widening portion 101 is reasonable, so that the light waves gather at the intersection of the waveguides 1, thereby effectively eliminating the diffraction effect of the light waves at the intersection of the waveguides 1, reducing the transmission loss, and having smaller transmission loss and smaller crosstalk at the 1310nm optical communication band.
Wherein the half length of the widening portion 101
And center half width
Can be set according to actual needs.
In some preferred embodiments, the center half width of the widened portion 101
0.75 μm, half length of the widened portion 101
And 3.5 μm. Therefore, the waveguide layer 100 has a compact structure, and when applied to a cross waveguide, the waveguide layer is beneficial to reducing the volume of the cross waveguide and realizing the miniaturization design of a photoelectric integrated circuit.
The thickness of the waveguide 1 and the width of the equal-width part 102 can be set according to actual needs.
In some preferred embodiments, the waveguide 1 has a thickness of 0.22 μm (i.e., the thickness of both the widened portion 101 and the equal-width portion 102 is 0.22 μm), and the width of the equal-width portion 102 is 0.45 μm. For the input/output interface of the waveguide layer of the common cross waveguide, the standard size is 0.45 μm × 0.22 μm, so that the waveguide layer 100 can meet the requirement of the interface general standard of the cross waveguide, which is beneficial to ensuring that the application range of the cross waveguide applying the waveguide layer 100 is larger.
Preferably, the cross section of the waveguide 1 perpendicular to the first axis of symmetry 2 (i.e. parallel to the second axis of symmetry 3) is rectangular.
In the present embodiment, the waveguide layer 100 is made of silicon.
The length of the equal-width portion 102 can be set according to actual needs, for example, according to the actual size of the crossed waveguide using the waveguide layer 100; if the size of the cross waveguide using the waveguide layer 100 is 8 μm × 8 μm, the half length of the widened portion 101
At 3.5 μm, the length of the equal width portion 102 = (8 μm to 2 × 3.5 μm)/2 =0.5 μm.
Referring to fig. 3, the present application provides an intersecting waveguide, which includes a substrate 200 and the waveguide layer 100, wherein the waveguide layer 100 is disposed on the upper surface of the substrate 200.
The two waveguides 1 of the waveguide layer 100 of the crossed waveguide comprise the widening portions 101, and the design of the gradual change mode of the width of the widening portions 101 is reasonable, so that the light waves gather at the intersection points of the waveguides 1, the diffraction effect of the light waves at the intersection points of the waveguides 1 is effectively eliminated, the transmission loss is reduced, and the 1310nm optical communication waveband has smaller transmission loss and smaller crosstalk.
In some embodiments, the refractive index of substrate 200 is lower than the refractive index of waveguide layer 100, and the refractive index of waveguide layer 100 is higher than the refractive index of air. Since the refractive index of the waveguide layer 100 is higher than the refractive index of the substrate 200 and air, the light wave can be totally reflected at the upper and lower surfaces when propagating in the waveguide layer 100, thereby avoiding energy loss caused by the light wave transmitting from the upper and lower surfaces. In addition, the waveguide layer 100 can be used normally without providing a cladding layer on the upper surface thereof, which corresponds to air as the cladding layer.
Preferably, the refractive index of the waveguide layer 100 is 3.45, and the refractive index of the substrate 200 is 1.45, so that the refractive index deviation between the waveguide layer 100 and the substrate 200 is large enough to effectively prevent the light wave from being transmitted from the lower surface to cause energy loss.
In some embodiments, substrate 200 is made of silicon dioxide (but not limited thereto) and waveguide layer 100 is made of silicon.
In some preferred embodiments, the upper surface of the waveguide layer 100 is provided with a cladding layer (not shown) having a refractive index lower than the refractive index of the waveguide layer 100. Since the refractive index of the cladding is lower than that of the waveguide layer 100, total reflection of the light wave at the upper surface of the waveguide layer 100 can be realized, and energy loss caused by transmission of the light wave from the upper surface can be avoided. For example, when the refractive index of the waveguide layer 100 is 3.45, the refractive index of the cladding layer is 1.45 (but not limited thereto), so that the refractive index deviation between the waveguide layer 100 and the cladding layer is large enough to effectively prevent the light wave from being transmitted from the upper surface to cause energy loss.
In this embodiment, the cladding is made of silica, but is not limited thereto (e.g., may also be a polymer or other material).
In some embodiments, the crossed waveguide is a compact crossed waveguide on the order of 8 μm, such that the substrate 200 has dimensions of 8 μm, the total length of the waveguide 1 is 8 μm, and the end faces at both ends of the waveguide 1 (i.e., the end faces of the constant width portion 102) are flush with the side faces of the substrate 200.
In one embodiment, the waveguide layer 100 has a thickness of 0.22 μm, the waveguide 1 has a width of 0.45 μm in the equal width portion 102, a center half width of the widened portion 101 of 0.75 μm, a half length of the widened portion 101 of 3.5 μm, a refractive index of the waveguide layer 100 of 3.45, a refractive index of the substrate 200 of 1.45, and a refractive index of the cladding layer of 1.45. For such crossed waveguides, crosstalk and transmission efficiency are calculated by a time-domain finite difference method using a gaussian optical wave having TE (transverse electric field wave) polarization, where fig. 4 shows the crosstalk for the 1310nm optical communication band, fig. 5 shows the variation of the optical transmission efficiency with time for the 1310nm optical communication band (the two curves in the figure are the variation of the optical transmission efficiency with time for the two waveguides 1, respectively), and fig. 6 shows the variation of the optical transmission efficiency with the wavelength of the optical communication wave; as can be seen from fig. 4, the light waves have a relatively obvious converging effect at the intersection point, and the crosstalk is relatively small for the 1310nm optical communication band, and can reach the crosstalk of-30 dBb; as can be seen from fig. 5, for the 1310nm optical communication band, the transmission efficiency can reach 97%, i.e., about-0.1 dB insertion loss; as can be seen from fig. 6, the transmission efficiency of the crossed waveguide is greater than 95% in the wavelength range of 1250nm to 1600nm, and even the transmission efficiency of the crossed waveguide exceeds 98.5% in the wavelength range of about 1400nm, and the crossed waveguide has excellent robustness.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A waveguide layer comprises two waveguides (1) which are vertically intersected, the shapes and the sizes of the two waveguides (1) are the same, and the central points of the two waveguides (1) are overlapped; the waveguide (1) is of a biaxial symmetrical structure, the symmetry axes of the waveguide comprise a first symmetry axis (2) passing through the central point along the length direction and a second symmetry axis (3) passing through the central point along the width direction, and the first symmetry axis (2) is perpendicular to the second symmetry axis (3); it is characterized in that the preparation method is characterized in that,
the waveguide (1) comprises a widened part (101) and two equal-width parts (102) which are respectively arranged at two ends of the widened part (101), the widths of the equal-width parts (102) on any cross section are the same, and the following relation exists between the distance from the side edge point of the widened part (101) to the second symmetry axis (3) and the distance from the side edge point to the first symmetry axis (2):
wherein the content of the first and second substances,
the distance of the side edge of the widened portion (101) from the second axis of symmetry (3) along a point,
is the distance of the side edge of the widening (101) from the first axis of symmetry (2) along a point,
is half the length of the widening (101),
is half the width of the equal width part (102),
is the central half width of the widening (101).
2. The waveguide layer according to claim 1, characterized in that the central half width of the widening (101) is 0.75 μm and the half length of the widening (101) is 3.5 μm.
3. The waveguide layer according to claim 2, characterized in that the thickness of the waveguide (1) is 0.22 μm and the width of the equal-width portion (102) is 0.45 μm.
4. The waveguide layer according to claim 1, characterized in that the cross section of the waveguide (1) perpendicular to the first axis of symmetry (2) is rectangular.
5. An intersecting waveguide comprising a substrate (200), further comprising a waveguide layer (100) according to any of claims 1-4, said waveguide layer (100) being arranged on an upper surface of said substrate (200).
6. The crossed waveguide according to claim 5, characterized in that the refractive index of the substrate (200) is lower than the refractive index of the waveguide layer (100), the refractive index of the waveguide layer (100) being higher than the refractive index of air.
7. The crossed waveguide according to claim 6, characterized in that the refractive index of the waveguide layer (100) is 3.45 and the refractive index of the substrate (200) is 1.45.
8. The crossed waveguide according to claim 5, characterized in that the substrate (200) is made of silicon dioxide and the waveguide layer (100) is made of silicon.
9. The crossing waveguide according to claim 5, characterized in that the upper surface of the waveguide layer (100) is provided with a cladding layer having a refractive index lower than the refractive index of the waveguide layer (100).
10. The crossed waveguide of claim 9, wherein the cladding is made of silica.
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| CN114815274B (en) * | 2022-04-28 | 2023-02-14 | 厦门大学 | Optical vortex generating system with locally controllable near field |
| CN115166902B (en) * | 2022-07-12 | 2024-02-02 | 无锡芯光互连技术研究院有限公司 | Waveguide layer and multimode interference cross waveguide thereof |
| CN115390189A (en) * | 2022-10-31 | 2022-11-25 | 之江实验室 | Planar optical cross waveguide based on adjoint method |
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| US10816725B2 (en) * | 2018-09-18 | 2020-10-27 | Globalfoundries Inc. | Waveguide intersections incorporating a waveguide crossing |
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| CN103513333A (en) * | 2013-10-25 | 2014-01-15 | 东南大学 | Blended crossing device for silicon-based nanowire |
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