CN114029790B - Wafer grinding method - Google Patents

Wafer grinding method Download PDF

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Publication number
CN114029790B
CN114029790B CN202111414745.9A CN202111414745A CN114029790B CN 114029790 B CN114029790 B CN 114029790B CN 202111414745 A CN202111414745 A CN 202111414745A CN 114029790 B CN114029790 B CN 114029790B
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Prior art keywords
grinding
wafer
detection
thickness
point
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CN202111414745.9A
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CN114029790A (en
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田国军
崔凯
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Beijing Jingyi Precision Technology Co ltd
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Beijing Jingyi Precision Technology Co ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Abstract

The invention provides a wafer grinding method, which comprises the following steps: acquiring a reference graph and acquiring a relation graph of wafer thickness and grinding end point detection laser reflected light intensity; selecting detection points, selecting a plurality of detection points on the surface of the wafer, respectively irradiating the detection points by using grinding end point detection laser, and acquiring the light intensity of the reflected laser of each detection point; measuring the thickness of the detection points in real time, and determining the wafer thickness of each detection point according to a relation graph of the wafer thickness and the light intensity of laser reflected light detected by a grinding end point; and adjusting the grinding conditions, taking the thickness of any one of the plurality of detection points as a reference point, calculating the difference between the thicknesses of other detection points and the thickness of the reference point, and adjusting the grinding conditions at the corresponding areas of the detection points according to the difference. The wafer grinding method provided by the invention can effectively reduce the situations of insufficient grinding amount or over grinding in the wafer grinding process.

Description

Wafer grinding method
Technical Field
The invention relates to the technical field of wafer manufacturing, in particular to a wafer grinding method.
Background
With the development of semiconductor chip manufacturing technology, the role and requirement of Chemical Mechanical Planarization (CMP) process for wafer in chip production are getting higher and higher. Chip devices are getting smaller, line widths are getting narrower and electrical isolation requirements are getting higher, which requires higher uniformity of wafer surface thickness after polishing (uniformity refers to the difference between the maximum thickness and the minimum thickness of a single wafer) in the CMP process. In a general polishing process, a single wafer is polished under a fixed polishing condition, and the polishing condition of a subsequent wafer is adjusted according to the polishing condition of the single wafer, so that due to different thickness distribution conditions of different wafer surfaces, a polishing endpoint is advanced or lagged to obtain, and the phenomenon of insufficient polishing amount or excessive polishing amount of the wafer is caused. As shown in fig. 1, 001 is a wafer before polishing, 002 is an under-polished wafer, and 003 is an over-polished wafer. Due to the above problems, it is necessary to re-process the defective wafer or to discard the wafer. Therefore, a solution is needed to solve the problem that the existing wafer polishing process is prone to insufficient polishing amount or excessive polishing amount.
Disclosure of Invention
The invention provides a wafer grinding method to solve the problem that insufficient grinding amount or excessive grinding amount is easy to occur in the wafer grinding process.
The invention provides a wafer grinding method, which comprises the following steps: acquiring a reference graph, and acquiring a relation graph of wafer thickness and polishing end point detection laser reflected light intensity; selecting detection points, selecting a plurality of detection points on the surface of the wafer, respectively irradiating the detection points by using grinding end point detection laser, and obtaining the light intensity of the reflected laser of each detection point; measuring the thickness of the detection points in real time, and determining the wafer thickness of each detection point according to a relation graph of the wafer thickness and the light intensity of laser reflected light detected by a grinding end point; and adjusting the grinding conditions in real time, taking the thickness of any one of the plurality of detection points as a reference point, calculating the difference between the thicknesses of other detection points and the thickness of the reference point, and adjusting the grinding conditions of the corresponding areas of the detection points according to the difference.
Optionally, in the step of selecting the detection points, distances from the detection points to the center of the surface of the wafer are different.
Optionally, in the step of adjusting the grinding conditions, when the difference is greater than the first set value, the grinding conditions are changed to increase the final grinding amount at the corresponding detection point; when the difference value is smaller than the second set value, the grinding condition is changed to reduce the final grinding amount at the position of the corresponding detection point; when the difference value is between the first set value and the second set value, the grinding condition of the position of the corresponding detection point is maintained.
Optionally, the grinding conditions include a grinding head pressure of a grinding device for performing the grinding process; when the difference value is larger than the first set value, increasing the pressure of the grinding head at the position of the corresponding detection point; and when the difference is smaller than a second set value, reducing the pressure of the grinding head at the corresponding detection point.
Optionally, the first set value is 25000 angstroms to 50000 angstroms; the second set value is 10 to 25000 angstroms.
Optionally, the step of measuring the thickness of the detection point is performed multiple times according to a set frequency, and the step of adjusting the grinding condition is performed once after each step of measuring the thickness of the detection point is performed.
Optionally, the frequency is set to be 0.001ms to 10000ms.
Optionally, the adjustment range of the pressure of the single grinding head is 0.001 psi-5 psi.
The technical scheme of the invention has the following advantages:
the wafer method provided by the invention utilizes the grinding end point to detect the light intensity of the reflected light of the laser, measures the thickness of different areas on the wafer in real time, adopts different grinding conditions for different thicknesses and adjusts the thicknesses in real time, so that the uniformity of the surface of the wafer is in line with the expectation. Through real-time adjustment of survey for the change of grinding condition is more timely, and the wafer surface degree of consistency after the grinding is higher, can effectively reduce the condition that the volume of grinding is not enough or the overgrinding. In addition, the detection is carried out only through a plurality of detection points, compared with the whole surface detection or half surface detection, the detection quantity is less, the condition is lower, the implementation is easy, and the method is relatively more economical.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic diagram of wafers in different states during a wafer polishing process;
FIG. 2 is a schematic flow chart illustrating a wafer polishing method according to the present invention.
Detailed Description
In order to solve the problem that insufficient grinding amount or over grinding is easy to occur in the wafer grinding process, the invention provides a wafer grinding method, which comprises the following steps: acquiring a reference graph, and acquiring a relation graph of wafer thickness and polishing end point detection laser reflected light intensity; selecting detection points, selecting a plurality of detection points on the surface of the wafer, respectively irradiating the detection points by using grinding end point detection laser, and obtaining the light intensity of the reflected laser of each detection point; measuring the thickness of the detection points, and determining the wafer thickness of each detection point according to a relation graph of the wafer thickness and the light intensity of laser reflected light detected by the grinding end point; and adjusting the grinding conditions, taking the thickness of any one of the plurality of detection points as a reference point, calculating the difference between the thicknesses of other detection points and the thickness of the reference point, and adjusting the grinding conditions at the corresponding areas of the detection points according to the difference.
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
Referring to fig. 2, the present embodiment provides a wafer polishing method, including the following steps:
acquiring a reference map; obtaining a relation graph of wafer thickness and grinding end point detection laser reflected light intensity;
selecting a detection point; selecting a plurality of detection points on the surface of the wafer, respectively irradiating the detection points by using grinding end point detection laser, and acquiring the light intensity of the reflected laser of each detection point;
measuring the thickness of a detection point in real time; determining the wafer thickness of each detection point according to a relation graph of the wafer thickness and the light intensity of laser reflected light detected at the grinding end point;
adjusting grinding conditions in real time; and taking the thickness of any one of the detection points as a reference point, calculating the difference between the thicknesses of other detection points and the thickness of the reference point, and adjusting the grinding conditions of the corresponding areas at the detection points according to the difference.
The wafer method provided by the embodiment utilizes the light intensity of the reflected light of the grinding end point detection laser to measure the thickness of different areas on the wafer in real time, and adopts different grinding conditions and real-time adjustment on different thicknesses so as to enable the uniformity of the surface of the wafer to be in line with the expectation. Through real-time adjustment of survey for the change of grinding condition is more timely, and the wafer surface degree of consistency after the grinding is higher, can effectively reduce the condition that the volume of grinding is not enough or the overgrinding. In addition, the detection is carried out only through a plurality of detection points, compared with the whole surface detection or half surface detection, the detection quantity is less, the condition is lower, the implementation is easy, and the method is relatively more economical.
Specifically, in the embodiment, in the step of selecting the detecting points, distances from the detecting points to the center of the surface of the wafer are different. For example, a plurality of annular regions and a central circular region are artificially divided from the center to the edge of the wafer to be polished, and one point is selected from each annular region and the central circular region as a detection point. Since the wafer keeps rotating horizontally during the grinding process, the thickness of the detection point can be used as the thickness of the area
In this embodiment, in the step of adjusting the grinding conditions, when the difference is greater than the first set value, the grinding conditions are changed to increase the final grinding amount at the corresponding detection point; when the difference value is smaller than the second set value, the grinding condition is changed to reduce the final grinding amount at the position of the corresponding detection point; when the difference value is between the first set value and the second set value, the grinding condition of the position of the corresponding detection point is maintained.
For example, 4 annular regions and 1 circular region at the center are selected, and each region respectively selects one detection point, which can respectively represent the thickness of 5 regions. After the thickness is measured in real time, 5 thickness data are obtained in total, any one point is selected as a reference point, the difference value of the thickness of each other detection point and the reference point is calculated respectively, and 4 difference values are obtained in total. And comparing the 4 difference values with a first set value and a second set value respectively, and adjusting the grinding conditions in the 4 areas in real time according to the size relationship.
Specifically, the grinding conditions include a grinding head pressure of a grinding device for performing the grinding process; when the difference value is larger than the first set value, increasing the pressure of the grinding head at the position of the corresponding detection point; and when the difference is smaller than a second set value, reducing the pressure of the grinding head at the corresponding detection point. The first set value is 25000 angstroms to 50000 angstroms, and may be 25000 angstroms, 30000 angstroms, 35000 angstroms, 40000 angstroms, 45000 angstroms, 50000 angstroms, for example; the second set value is 10 to 25000 angstroms, and may be, for example, 10 angstroms, 100 angstroms, 1000 angstroms, 10000 angstroms, 20000 angstroms, 25000 angstroms.
In this embodiment, the step of measuring the thickness of the detection point in real time is performed a plurality of times according to the set frequency, and the step of adjusting the polishing conditions is performed once after each step of measuring the thickness of the detection point. Optionally, the frequency is set to be 0.001ms to 10000ms. Meanwhile, the adjustment range of the pressure of the single grinding head is 0.001 psi-5 psi. The higher the frequency of real-time detection is, the higher the frequency of adjustment is, and the higher the polishing accuracy to be finally obtained is, and the more easily the final polishing amount satisfies the desired amount, the more easily the case of insufficient polishing amount or excessive polishing amount can be reduced.
Further, the step of acquiring the reference map includes the steps of: measuring the light intensity of the reflected light of the wafers with different materials and different thicknesses by using the grinding end point detection laser with a fixed wavelength, and obtaining a relation graph of the thickness of the wafers with different materials and the light intensity of the laser reflected light of the grinding end point detection laser as an initial graph; the light intensity of the reflected light in each relation graph changes periodically along with the thickness of the wafer; and determining and selecting a cycle multiple in the initial graph as a reference graph according to the material of the wafer. For example, when the wafer material is silicon dioxide, one cycle may represent a thickness variation of 2300 angstroms. Generally, the relation graph of the thickness of the wafer and the light intensity of the laser reflected light of the polishing endpoint detection is a sine wave graph, and sine waves with different cycle multiples can be selected as a reference graph according to actual requirements. For example, the amount of the compound may be 0.1 to 2 times.
In this embodiment, the wafer polishing method further includes the steps of:
a wafer polishing device is provided, which comprises a bearing platform, a polishing head, a laser emitting device and a laser receiving device, namely a control calculation unit.
The wafer is placed on a bearing platform, laser detection of initial thickness is carried out firstly, a detection point is selected, detection laser is emitted to the detection point by a laser emitting device, a laser receiving device receives reflected light of the detection laser, and data of the reflected light is transmitted to a control calculation unit. In some embodiments, the incident direction of the detection laser may be located on the opposite surface of the wafer from the direction polished by the polishing head. Therefore, the grinding can be simultaneously detected in real time, and the grinding is not required to be stopped for detection.
The control calculation unit calculates the thickness of each part of the wafer according to the reflected light feedback data and provides initial grinding conditions.
The polishing head is moved close to the surface of the wafer, and polishing is performed according to the initial polishing conditions.
And carrying out real-time detection on the thickness of the wafer and real-time adjustment on the grinding conditions according to the set frequency.
The present invention has been described above by way of examples, and it is believed that one skilled in the art can appreciate the present invention by way of the above examples. It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.

Claims (5)

1. A method for polishing a wafer, comprising the steps of:
acquiring a reference graph and acquiring a relation graph of wafer thickness and grinding end point detection laser reflected light intensity;
selecting detection points, selecting a plurality of detection points on the surface of the wafer, respectively irradiating the detection points by using the grinding end point detection laser, and acquiring the light intensity of the reflected laser of each detection point;
measuring the thickness of detection points in real time, and determining the wafer thickness of each detection point according to a relation graph of the wafer thickness and the light intensity of laser reflected light detected by a grinding end point;
adjusting grinding conditions in real time, taking the thickness of any one of the detection points as a reference point, calculating the difference value between the thickness of other detection points and the thickness of the reference point, and adjusting the grinding conditions at the corresponding area of the detection point in real time according to the difference value;
in the step of adjusting the grinding conditions in real time, when the difference value is greater than a first set value, changing the grinding conditions to increase the final grinding amount at the position of the corresponding detection point; when the difference value is smaller than a second set value, changing the grinding condition to reduce the final grinding amount at the position of the corresponding detection point; when the difference value is between the first set value and the second set value, maintaining the grinding condition of the position of the corresponding detection point;
the grinding conditions include a grinding head pressure of a grinding device for performing a grinding process;
when the difference value is larger than a first set value, increasing the pressure of the grinding head at the position of the corresponding detection point;
when the difference value is smaller than a second set value, reducing the pressure of the grinding head where the corresponding detection point is located;
the first set value is 25000 angstroms to 50000 angstroms; the second set value is 10 to 25000 angstroms.
2. The wafer polishing method as set forth in claim 1,
in the step of selecting the detection points, the distances from the detection points to the center of the surface of the wafer are different.
3. The wafer polishing method as set forth in claim 1,
the adjustment range of the grinding head pressure in one time is 0.001 psi-5 psi.
4. The wafer polishing method as set forth in claim 1,
the step of measuring the thickness of the detection point is performed a plurality of times according to a set frequency, and the step of adjusting the grinding conditions is performed once after each step of measuring the thickness of the detection point.
5. The wafer polishing method as set forth in claim 4,
the set frequency is 0.001 ms-10000 ms.
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