CN114000116A - Rectangular cluster beam source high-power pulse magnetron sputtering device and testing method - Google Patents
Rectangular cluster beam source high-power pulse magnetron sputtering device and testing method Download PDFInfo
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- CN114000116A CN114000116A CN202111219894.XA CN202111219894A CN114000116A CN 114000116 A CN114000116 A CN 114000116A CN 202111219894 A CN202111219894 A CN 202111219894A CN 114000116 A CN114000116 A CN 114000116A
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 31
- 238000012360 testing method Methods 0.000 title claims description 11
- 230000005291 magnetic effect Effects 0.000 claims abstract description 36
- 239000013077 target material Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims description 38
- 238000000151 deposition Methods 0.000 claims description 27
- 230000008021 deposition Effects 0.000 claims description 27
- 230000003044 adaptive effect Effects 0.000 claims description 20
- 230000008878 coupling Effects 0.000 abstract description 24
- 238000010168 coupling process Methods 0.000 abstract description 24
- 238000005859 coupling reaction Methods 0.000 abstract description 24
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000010998 test method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000006698 induction Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000000168 high power impulse magnetron sputter deposition Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
Abstract
The invention discloses a rectangular high-power pulse magnetron sputtering device for a cluster beam source and a test method, wherein the device comprises a substrate, an outer chamber, an inner chamber and a power supply module; the top of the outer chamber is provided with an outlet of sputtered cluster beams; the base plate is mounted on the outlet; the bottom of the outer cavity is provided with an air exhaust port of a vacuum pump; the power supply module is arranged on the bottom of the outer chamber; the inner chamber is arranged on the power supply module; the side wall of the inner chamber is provided with a gas inlet; the top of the inner chamber is provided with an opening, the inner part of the inner chamber comprises a target material and a magnetic control device, and the target material is arranged on the magnetic control device; the power supply module is formed by coupling a high-power pulse magnetron sputtering module and a direct-current pulse power supply which are connected in series with each other and then a direct-current power supply or a radio-frequency power supply; the magnetic control device is a rectangular integral self-adaptive magnet. The invention improves the ionization rate of target atoms in the sputtering process and improves the production efficiency of clusters.
Description
Technical Field
The invention belongs to the field of pulse magnetron sputtering, and particularly relates to a rectangular high-power pulse magnetron sputtering device for a cluster beam source and a testing method.
Background
In the existing pulse magnetron sputtering device, the existence of a magnetic field is necessary, and most of the magnetic pole technologies used at present are round and long permanent magnets which are formed by combining a plurality of strong magnetic materials. This presents a considerable drawback: the assembly and disassembly of these several ferromagnetic materials is quite time consuming, and it takes 2-3 days to build a complete magnetron sputtering device for a cluster source, which obviously does not meet the requirement of high efficiency. In addition, in the experimental process, if the magnetic field distribution of the magnetic pole device needs to be adjusted, the original magnetic pole technology can only disassemble and reassemble the magnet material, so that a large amount of experimental time is delayed.
The limitation of the existing power technology (DC direct current power or RF radio frequency power) leads to a low ionization rate of sputtered target atoms, so that the proportion of positively charged clusters in the generated atom cluster beam is low, which is exactly what we need, and the imperfect power technology also restricts the generation of available positively charged atom clusters. In the traditional direct current magnetron sputtering process, target ions are bound near the target under the action of magnetic lines of force of a magnetic field and negative voltage applied on the target, so that the number of the target ions sputtered at the cluster beam outlet position is greatly reduced. However, in the manufacturing application of the atomic cluster, the ionization rate of target atoms at the outlet can significantly affect the performance of the cluster beam.
Disclosure of Invention
The invention aims to provide a high-power pulse magnetron sputtering device with a rectangular beam source for clusters and a testing method, and aims to solve the technical problems that the ionization rate of sputtered target material atoms is low, and the proportion of clusters with positive charges in generated atom cluster beams is low.
In order to solve the technical problems, the specific technical scheme of the invention is as follows:
a rectangular high-power pulse magnetron sputtering device for a cluster beam source is characterized by comprising a substrate, an outer chamber, an inner chamber and a power supply module;
the top of the outer chamber is provided with an outlet of sputtered cluster beams;
the base plate is mounted on the outlet;
the bottom of the outer cavity is provided with an air exhaust port of a vacuum pump;
the power supply module is arranged on the bottom of the outer chamber;
the inner chamber is arranged on the power supply module;
the side wall of the inner chamber is provided with a gas inlet;
the top of the inner chamber is provided with an opening, the inner part of the inner chamber comprises a target material and a magnetic control device, and the target material is arranged on the magnetic control device;
the power supply module comprises a high-power pulse magnetron sputtering module, a direct-current pulse power supply, a direct-current power supply and a radio-frequency power supply;
the high-power pulse magnetron sputtering module is connected with a direct-current pulse power supply in series and then coupled with a direct-current power supply or a radio-frequency power supply;
the magnetic control device is a monoblock rectangular self-adaptive magnet.
Further, the magnetic control device is a monolithic rectangular adaptive magnet with a shape of 10 x 50 cm.
Further, the target material is a rectangular or rotary cylindrical target.
Further, the target material is a metal or non-metal target.
A testing method of a rectangular high-power pulse magnetron sputtering device for a cluster beam source comprises the following steps:
and 2, in the process of generating cluster beam current by magnetron sputtering, slowly moving the crystal array from the position A to the position B along the short side direction of the magnetron at the same height, enabling the projection of the motion track on the surface of the magnetron to pass through the geometric center of the magnetron, adjusting the height to the position C after reaching the position B, then moving the crystal array to the position D along the short side direction of the adaptive magnet at the same height, and then slowly moving the crystal array upwards in a swinging mode according to the rule, thereby testing the performance of the cluster beam current source in the device.
The rectangular high-power pulse magnetron sputtering device for the cluster beam source and the testing method have the following advantages:
1. the invention adopts the power supply module, and uses the structure that the high-power pulse magnetron sputtering module is connected with a direct current pulse power supply in series and then is coupled with a direct current power supply or a radio frequency power supply, thereby controlling the proportion of gas and metal ions, improving the ionization rate of target material atoms in the sputtering process, integrally improving the yield of atom clusters and indirectly improving the production efficiency of the clusters.
2. The magnetic control device adopted by the invention is a rectangular self-adaptive magnet, in the equipment for producing the atomic cluster, an ion optical device needs to be connected at the outlet of an outer cavity of the magnetic control sputtering device, when the ion optical device is cuboid, the cross section of the cluster beam is required to be square, so that the subsequent process is facilitated, and at the moment, a rectangular magnetic pole device is required to generate the cluster beam with the rectangular cross section.
Drawings
FIG. 1 is a schematic structural diagram of a rectangular high-power pulsed magnetron sputtering apparatus for cluster beam sources according to the present invention;
FIG. 2 is a schematic diagram of a power module according to the present invention;
FIG. 3 is a graph of the magnetic induction distribution of the surface of the adaptive magnet according to the present invention;
FIG. 4 is a cross-sectional view of the magnetic induction above the adaptive magnet of the present invention;
FIG. 5 is a schematic three-dimensional graph of the variation of magnetic induction with height above the adaptive magnet of the present invention;
FIG. 6 is a schematic diagram of a crystal array for detecting cluster deposition rate in accordance with the present invention;
FIG. 7 is a schematic diagram of measuring the deposition rate of atomic clusters through a crystal array when the target material of the present invention is copper and a direct current power coupling mode is adopted;
FIG. 8 is a schematic diagram of the deposition rate of atomic clusters measured by a crystal array when the target of the present invention is copper and a radio frequency power coupling is employed;
FIG. 9 is a schematic diagram of measuring the deposition rate of atomic clusters by a crystal array when the target material of the present invention is aluminum and a DC power coupling is adopted;
FIG. 10 is a schematic diagram of the deposition rate of atomic clusters measured by a crystal array when the target of the present invention is aluminum and a radio frequency power coupling is employed;
FIG. 11 is a schematic diagram of measuring the deposition rate of atomic clusters by a crystal array when the target material of the present invention is silver and a direct current power supply coupling mode is adopted;
FIG. 12 is a schematic diagram of the deposition rate of atomic clusters measured by a crystal array when the target of the present invention is silver and a radio frequency power coupling is used;
FIG. 13 is a schematic diagram of measuring the deposition rate of atomic clusters by a crystal array when the target material of the present invention is silicon and a DC power coupling is used;
FIG. 14 is a schematic diagram of the deposition rate of atomic clusters measured by a crystal array when the target of the present invention is silicon and a radio frequency power coupling is employed;
FIG. 15 is a schematic diagram of measuring the deposition rate of atomic clusters by a crystal array when the target material of the present invention is iron and a DC power coupling is adopted;
FIG. 16 is a schematic diagram of the deposition rate of atomic clusters measured by a crystal array when the target of the present invention is iron and a radio frequency power coupling is employed;
the notation in the figure is: 1. a substrate; 2. an outlet; 3. a target material; 4. a magnetic control device; 5. a power supply module; 6. an extraction opening of the vacuum pump; 7. an inlet; 8. an outer chamber; 9. and (5) crystal arraying.
Detailed Description
In order to better understand the purpose, structure and function of the present invention, a rectangular high power pulse magnetron sputtering apparatus for cluster beam source and a testing method thereof are described in further detail below with reference to the accompanying drawings.
As shown in fig. 1, the present invention includes a substrate 1, an outer chamber 8, an inner chamber, and a power module 5;
the top of the outer chamber 8 is provided with an outlet 2 for sputtered cluster beams;
the substrate 1 is mounted on the outlet 2;
the bottom of the outer chamber 8 is provided with an air exhaust port 6 of a vacuum pump;
the power supply module 5 is arranged at the bottom of the outer chamber 8;
the inner chamber is arranged on the power module 5;
the side wall of the inner chamber is provided with an inlet 7 for working gas (argon);
the top of the inner chamber is opened, the inner chamber comprises a target 3 and a magnetic control device 4, and the target 3 is arranged on the magnetic control device 4;
the target is a rectangular or rotating cylindrical target.
The target material is a metal or non-metal target.
The magnetic control device 4 is a rectangular adaptive magnet with a shape of 10 x 50cm and a certain thickness. The rectangular self-adaptive magnet is formed by pressing a large number of miniature magnetic blocks under the environment of a certain temperature and an electromagnetic field. The self-adaptive magnet is particularly characterized in that the self-adaptive magnet is a whole body, the magnetic field intensity distribution of the self-adaptive magnet is more uniform, the magnetic field distribution of the self-adaptive magnet can be self-defined and designed through an external electromagnetic field in the later period, and the self-adaptive magnet has expandability. The magnetic field property after the adaptive magnet is manufactured is given, the distribution of the magnetic induction b (t) on the surface of the adaptive magnet is shown in fig. 3, wherein the abscissa x (mm) is indicated by the short side (10cm) of the adaptive magnet, the ordinate y (mm) is indicated by the long side (50cm) of the adaptive magnet, and the position 0(mm) is the geometric center of the rectangular magnet. The cross-sectional view of the magnetic induction b (t) above the magnet is shown in fig. 4, in which the abscissa x is a short side of the adaptive magnet, and the ordinate z (mm) represents the height from the adaptive magnet. Fig. 5 shows a partial three-dimensional graph of the variation of magnetic induction with height above the adaptive magnet.
Before the power supply of the device is started, the chamber needs to be evacuated, a large amount of plasma is formed in the sputtering process, and the motion state of specific particles is described in fig. 1.
The design of the power module 5 includes the coupling scheme of the power module and the design of the power parameters. The basis of the design of the power module 5 is as follows: the required power waveform. The required cluster beam current can be obtained more efficiently under a good power waveform. Under different target material conditions, the so-called good power supply waveforms are different, so that the design of each parameter in the power supply module is also different, and only reasonable design is needed. The Power module design focuses on a coupling scheme combining different types of Power supplies (including High Power Impulse Magnetron Sputtering) together, and the coupling scheme can generate a 'good Power waveform' which cannot be achieved by other Power supply combination schemes, as shown in fig. 2; pulse Direct current (pulse dc) represents a dc pulse power supply; dc (direct current) represents a direct current power supply; rf (radio freqency) denotes a radio frequency power supply. The Hipims module is connected with a pulseDC power supply in series and then coupled with a DC power supply or an RF power supply, and finally the power supply module required by the magnetron sputtering device is obtained through setting power supply parameters.
To test the performance of the designed pulsed magnetron sputtering apparatus, we used a movable crystal array 9 in the outer chamber of the apparatus shown in fig. 1 for detecting the cluster deposition rate, as shown schematically in fig. 6. In the figure, the crystal array 9 belongs to the anode of the power module and is positioned above the adaptive magnet. In the process of generating cluster beams by magnetron sputtering, the crystal array 9 slowly moves from a position A to a position B (the projection of the motion track on the surface of the adaptive magnet passes through the geometric center of the adaptive magnet) at the same height along the direction of the short side (10cm) of the adaptive magnet, the height is adjusted to the position C after the crystal array reaches the position B, then the crystal array is moved to the position D again at the same height along the direction of the short side of the adaptive magnet, and then the crystal array slowly moves back and forth in an upward mode according to the rule, and the moving track is shown in fig. 6. The performance of the pulsed magnetron sputtering device as a cluster beam source is researched by adopting different combination methods of different targets and power modules:
1. the target material is copper (Cu), and when a Direct Current (DC) power coupling mode is adopted, the deposition rate of the atomic cluster is measured by the crystal array 9, as shown in fig. 7. The ordinate of the diagram is the Deposition rate (nm/min), the abscissa H of each sub-diagram is the height of the crystal array from the target, and the abscissa P (kw) of the whole combination diagram is the power of the power module. The dots in the graph represent the average deposition rate of cluster beams at each fixed height, and the regions are the upper and lower floating regions of the deposition rate.
2. The target material is copper (Cu), and the deposition rate of the atomic cluster is measured by the crystal array 9 in a Radio Frequency (RF) power coupling manner, as shown in fig. 8.
3. The target material is aluminum (Al), and when a Direct Current (DC) power coupling mode is adopted, the deposition rate of the atomic cluster is measured by the crystal array 9, as shown in fig. 9.
4. The target material is aluminum (Al), and when a Radio Frequency (RF) power coupling mode is adopted, the deposition rate of the atomic cluster is measured by the crystal array 9, as shown in fig. 10.
5. The target material is silver (Ag), and when a Direct Current (DC) power coupling mode is adopted, the deposition rate of the atomic cluster is measured by the crystal array 9, as shown in fig. 11.
6. The target material is silver (Ag), and the deposition rate of the atomic cluster is measured by the crystal array 9 in a Radio Frequency (RF) power coupling manner, as shown in fig. 12.
7. When the target material is silicon (Si) and a Direct Current (DC) power coupling mode is adopted, the deposition rate of the atomic cluster is measured by the crystal array 9, as shown in fig. 13.
8. The target material is silicon (Si), and when a Radio Frequency (RF) power coupling mode is adopted, the deposition rate of the atomic cluster is measured by the crystal array 9, as shown in fig. 14.
9. The target material is iron (Fe), and when a Direct Current (DC) power coupling mode is adopted, the deposition rate of the atomic cluster is measured by the crystal array 9, as shown in fig. 15.
10. The target material is iron (Fe), and the deposition rate of the atomic clusters is measured by the crystal array 9 in a Radio Frequency (RF) power coupling manner, as shown in fig. 16.
It is to be understood that the present invention has been described with reference to certain embodiments, and that various changes in the features and embodiments, or equivalent substitutions may be made therein by those skilled in the art without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (5)
1. A rectangular high-power pulse magnetron sputtering device for a cluster beam source is characterized by comprising a substrate (1), an outer chamber (8), an inner chamber and a power module (5);
the top of the outer chamber (8) is provided with an outlet (2) of sputtered cluster beams;
the base plate (1) is mounted on the outlet (2);
the bottom of the outer chamber (8) is provided with an air exhaust port (6) of a vacuum pump;
the power supply module (5) is arranged on the bottom of the outer chamber (8);
the inner chamber is arranged on the power module (5);
the side wall of the inner chamber is provided with a gas inlet (7);
the top of the inner chamber is opened, the inner chamber comprises a target (3) and a magnetic control device (4), and the target (3) is arranged on the magnetic control device (4);
the power supply module (5) comprises a high-power pulse magnetron sputtering module, a direct-current pulse power supply, a direct-current power supply and a radio-frequency power supply;
the high-power pulse magnetron sputtering module is connected with a direct-current pulse power supply in series and then coupled with a direct-current power supply or a radio-frequency power supply;
the magnetic control device (4) is a monoblock rectangular self-adaptive magnet.
2. The rectangular high power pulsed magnetron sputtering device for cluster beam sources according to claim 1 characterized in that the magnetron device (4) is a massive rectangular adaptive magnet with a shape of 10 x 50 cm.
3. The rectangular high power pulsed magnetron sputtering device for cluster beam source according to claim 1 characterized in that the target (3) is a rectangular or rotating cylindrical target.
4. The rectangular high power pulsed magnetron sputtering device for cluster beam sources according to claim 1 characterized in that the target material (3) is a metallic or non-metallic target.
5. The testing method of the rectangular high power pulse magnetron sputtering device for cluster beam source according to any one of claims 1 to 4, characterized by comprising the following steps:
step 1, applying a movable crystal array (9) for detecting the cluster deposition rate in an outer chamber (8), wherein the crystal array (9) belongs to the anode of a power supply module and is positioned above a magnetic control device (4);
and 2, in the process of generating cluster beam current by magnetron sputtering, slowly moving the crystal array (9) from the position A to the position B along the short side direction of the magnetron device (4) at the same height, enabling the projection of the motion track on the surface of the magnetron device (4) to pass through the geometric center of the magnetron device, adjusting the height to the position C after reaching the position B, then moving the crystal array to the position D along the short side direction of the adaptive magnet at the same height, and then slowly moving back and forth in a swinging manner to move upwards according to the rule, thereby testing the performance of the cluster beam current source in the device.
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| US20040089535A1 (en) * | 2002-08-16 | 2004-05-13 | The Regents Of The University Of California. | Process and apparatus for pulsed dc magnetron reactive sputtering of thin film coatings on large substrates using smaller sputter cathodes |
| US20100264016A1 (en) * | 2007-12-14 | 2010-10-21 | The Regents Of The University Of California | Very low pressure high power impulse triggered magnetron sputtering |
| CN104131258A (en) * | 2014-06-17 | 2014-11-05 | 北京大学深圳研究生院 | Ion film-plating device and ion film-plating method |
| CN205152323U (en) * | 2015-10-27 | 2016-04-13 | 中国科学院兰州化学物理研究所 | Magnetron sputtering device of utensil high power pulsed ion source |
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2021
- 2021-10-20 CN CN202111219894.XA patent/CN114000116A/en not_active Withdrawn
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| US20040089535A1 (en) * | 2002-08-16 | 2004-05-13 | The Regents Of The University Of California. | Process and apparatus for pulsed dc magnetron reactive sputtering of thin film coatings on large substrates using smaller sputter cathodes |
| US20100264016A1 (en) * | 2007-12-14 | 2010-10-21 | The Regents Of The University Of California | Very low pressure high power impulse triggered magnetron sputtering |
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| US20180209035A1 (en) * | 2017-01-25 | 2018-07-26 | Applied Materials, Inc. | Extension of pvd chamber with multiple reaction gases, high bias power, and high power impulse source for deposition, implantation, and treatment |
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Application publication date: 20220201 |