CN113972147A - Packaging method capable of improving adhesive force of nickel layer - Google Patents
Packaging method capable of improving adhesive force of nickel layer Download PDFInfo
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- CN113972147A CN113972147A CN202010714412.7A CN202010714412A CN113972147A CN 113972147 A CN113972147 A CN 113972147A CN 202010714412 A CN202010714412 A CN 202010714412A CN 113972147 A CN113972147 A CN 113972147A
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- layer
- gold
- electroplating
- nickel layer
- nickel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2746—Plating
- H01L2224/27462—Electroplating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29144—Gold [Au] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29147—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29155—Nickel [Ni] as principal constituent
Abstract
The invention provides a packaging method capable of improving the adhesive force of a nickel layer. The packaging method comprises the following steps: 1) providing a substrate, and forming a copper layer at a preset position on the surface of the substrate through electroplating; 2) electroplating the surface of the copper layer to form a nickel layer; 3) and after the electroplating machine is electrified, placing the substrate with the nickel layer into a gold electroplating liquid tank of the electroplating machine so as to form a gold layer on the surface of the nickel layer by electroplating. In the packaging process, the electroplating equipment is powered on, and then the substrate with the nickel layer is placed in the gold electroplating solution tank to form the gold layer on the nickel layer in an electroplating way, so that the nickel atoms of the nickel layer and the gold atoms of the gold electroplating solution can be effectively prevented from carrying out a displacement reaction, the nickel layer is ensured not to be damaged, the adhesion between the nickel layer and the gold layer is improved, bubbles are prevented from being generated between the nickel layer and the gold layer, the nickel layer and the gold layer are prevented from falling off and the like, and the product quality can be obviously improved.
Description
Technical Field
The invention belongs to the field of semiconductor packaging, and particularly relates to a packaging method capable of improving the adhesive force of a nickel layer.
Background
The Wafer Level Packaging (WLP) technology is a process flow of cutting a wafer into individual independent finished chips after Packaging by using a whole wafer as a Packaging and testing object, which is greatly different from the conventional chip Packaging process. The size of the chip packaged by the WLP process can be reduced by more than 20% compared with the size of the chip packaged by the conventional process, and thus the WLP package has become the mainstream of the packaging market. In the WLP packaging process, the electroplating process is a very important process, and the quality of the process is directly related to the electrical performance of the final product. In the conventional WLP packaging process, a substrate plated with a nickel layer is placed in a gold plating solution tank, and then power is applied to form a gold layer by plating, i.e., the nickel layer is initially contacted with the gold plating solution in the absence of current. The inventor finds that, because nickel and gold electroplating solution can generate a displacement reaction under the condition of no current, the adhesion of the nickel layer and the gold layer after electroplating is poor, so that defects such as bubbles (bubbles) and/or peeling (peeling) of the nickel layer and the gold layer are easily generated between the nickel layer and the gold layer, and the defects can bring a plurality of adverse effects to the subsequent process flow, and cause the performance of the final product to be deteriorated or even completely fail.
Disclosure of Invention
In view of the above disadvantages of the prior art, an object of the present invention is to provide a packaging method capable of improving the adhesion of a nickel layer, which is used to solve the problems that in the existing packaging process, a substrate formed with a nickel layer is placed in a gold electroplating bath and then electrified, a nickel and gold electroplating solution can generate a displacement reaction under the condition of no current, the adhesion of the nickel layer and the gold layer after electroplating is poor, bubbles are easily generated between the nickel layer and the gold layer and/or the nickel layer and the gold layer fall off, and the product performance is reduced or even completely fails.
In order to achieve the above and other related objects, the present invention provides a packaging method capable of improving adhesion of a nickel layer, the packaging method comprising:
1) providing a substrate, and forming a copper layer at a preset position on the surface of the substrate through electroplating;
2) electroplating the surface of the copper layer to form a nickel layer;
3) and after the electroplating machine is electrified, placing the substrate with the nickel layer into a gold electroplating liquid tank of the electroplating machine so as to form a gold layer on the surface of the nickel layer by electroplating.
Optionally, the packaging method further includes a step of forming a photoresist layer on the surface of the substrate before forming the copper layer, and exposing and developing the photoresist layer to define the predetermined position.
Optionally, the packaging method further includes a step of removing the residual photoresist layer after the gold layer is formed, and then performing a wire bonding process to electrically connect the gold layer and the metal lead.
Optionally, a chip is formed in the substrate, and the copper layer is electrically connected to the chip.
Optionally, the packaging method further comprises a step of drying the substrate after forming the gold layer.
Optionally, the thickness of the nickel layer is greater than the thickness of the gold layer.
Optionally, the packaging method further comprises the step of forming a titanium layer on the surface of the substrate before forming a copper layer, wherein the copper layer is formed on the surface of the titanium layer.
Optionally, a step of wetting the substrate formed with the nickel layer is further included between the steps 2) and 3).
As mentioned above, in the packaging process, the substrate with the nickel layer is placed into the gold electroplating liquid tank after the electroplating equipment is powered on to form the gold layer on the nickel layer in an electroplating way, so that the nickel and gold electroplating liquid are prevented from contacting under the condition of no current, the nickel atoms of the nickel layer and the gold atoms of the gold electroplating liquid are effectively prevented from generating a displacement reaction, the quality of the nickel layer is ensured, the adhesion between the nickel layer and the gold layer is improved, the generation of bubbles between the nickel layer and the gold layer is avoided, the falling of the nickel layer and the gold layer is avoided, and the quality of products can be obviously improved.
Drawings
Fig. 1 is a flow chart of a packaging method capable of improving the adhesion of a nickel layer according to the present invention.
Fig. 2 to 7 are schematic structural diagrams showing steps of the packaging method of fig. 1.
Description of the element reference numerals
11 device layer
12 dielectric layer
13 Metal wire layer
14 copper layer
15 nickel layer
16 gold layer
17 Photoresist layer
18 metal lead
S1-S3
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 7. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
As shown in fig. 1, the present invention provides a packaging method capable of improving adhesion of a nickel layer, the packaging method includes the steps of:
s1: providing a substrate, and forming a copper layer 14 at a predetermined position on the surface of the substrate through electroplating;
s2: electroplating the surface of the copper layer 14 to form a nickel layer 15;
s3: after the electroplating machine is powered on, the substrate with the nickel layer 15 is placed in a gold electroplating solution tank of the electroplating machine, so that a gold layer 16 is electroplated on the surface of the nickel layer 15.
In the existing WLP packaging process, a substrate plated with a nickel layer is placed in a gold electroplating solution tank, and then is electrified to form a gold layer by electroplating, namely the nickel layer is firstly contacted with a gold electroplating solution under the condition of no current, the adhesion of the nickel layer and the gold layer plated by the process flow is poor, so that the defects of bubbles (bubbles) and/or peeling (peeling) of the nickel layer and the gold layer and the like are easily generated between the nickel layer and the gold layer, the defects can bring a plurality of adverse effects to the subsequent process flow, and finally the performance of the product is deteriorated or even completely failed. The inventors have found, after long-term research, that the nickel and gold plating solutions are subjected to a displacement reaction in the absence of current, so that the nickel layer is damaged, the adhesion between the nickel layer and the gold layer is deteriorated, and various defects are caused, and thus the inventors have made experiments several times to design the present invention. In the packaging process, the electroplating equipment is powered on, and then the substrate with the nickel layer is placed into the gold electroplating solution tank to form the gold layer on the nickel layer in an electroplating way, so that the nickel and gold electroplating solutions are prevented from contacting under the condition of no current, the nickel atoms in the nickel layer and the gold atoms in the gold electroplating solution can be effectively prevented from carrying out a displacement reaction, the nickel layer is ensured not to be damaged, the adhesion between the nickel layer and the gold layer is improved, the generation of bubbles between the nickel layer and the gold layer is avoided, the falling of the nickel layer and the gold layer is avoided, and the product quality can be obviously improved.
In one example, the substrate includes a device layer 11, a dielectric layer 12 on the device layer 11, and a metal wire layer 13 on the dielectric layer 12 and within the dielectric layer 12 and electrically connected to devices within the device layer 11. More specifically, the device layer 11 may be a semiconductor wafer in which a plurality of semiconductor chips are formed; the material of the dielectric layer 12 includes but is not limited to one or a combination of two or more of epoxy resin, silica gel, PI, PBO, BCB, silicon oxide, phosphosilicate glass, and fluorine-containing glass, and the method for forming the dielectric layer 12 includes but is not limited to a chemical vapor deposition method or a physical vapor deposition method; the metal line layer 13 is formed by a method including, but not limited to, physical vapor deposition or electroplating, for example, forming a pattern corresponding to the metal line layer 13 in the dielectric layer 12 by exposure, development, etc., and then filling metal by physical vapor deposition or electroplating to form the metal line layer 13; the material of the metal wire layer 13 includes, but is not limited to, one or a combination of two or more of copper, aluminum, nickel, gold, silver, and titanium. And after the corresponding packaging process is finished, cutting the semiconductor wafer to form independent chips. To enhance the adhesion between the substrate and the copper layer 14, a titanium layer may be formed on the surface of the substrate before the copper layer 14 is formed, and the copper layer is formed on the surface of the titanium layer.
In another example, the substrate comprises a carrier layer, an adhesive layer on the carrier layer, and a substrate layer on the adhesive layer; the carrier layer includes, but is not limited to, glass and ceramic, and the substrate layer includes, but is not limited to, a silicon wafer. After the corresponding packaging process is completed, for example, the structure obtained after the wire bonding process is bonded with other substrates so as to electrically lead out the chips on the other substrates by using the prepared structure of the invention. The specific structure of the substrate is not limited in this embodiment. However, the substrate of any structure ensures the adhesion between the nickel layer 15 and the gold layer 16, and prevents bubbles from being generated or falling off between the nickel layer 15 and the gold layer 16 to ensure the influence of good conductivity between the conductive interconnection structures on the device performance, so that the substrate is suitable for the packaging method of the invention.
As an example, the packaging method further includes the steps of forming a photoresist layer 17 on the substrate surface before forming the copper layer 14, and exposing and developing the photoresist layer 17 to define the predetermined position. Specifically, the process includes forming a photoresist layer 17 on the substrate surface through a coating process (the substrate may be cleaned and dried, for example, ultrasonically cleaned, before the photoresist layer 17 is formed), wherein the thickness of the photoresist layer 17 is ensured to be equal to or greater than the sum of the thicknesses of the subsequently formed copper layer 14, nickel layer 15 and gold layer 16, and then forming an opening at a position corresponding to the predetermined position through an exposure and development process to expose the surface of the substrate, so as to obtain a structure as shown in fig. 2, and then forming the copper layer 14 in the opening. Of course, in other examples, the predetermined position may be defined by forming the positioning mark on the surface of the substrate, which is strictly limited in this embodiment, but it is preferable to form the photoresist layer 17 and develop the photoresist layer by exposure to define the predetermined position, and in the subsequent electroplating process, the residual photoresist layer 17 around the predetermined position (i.e. around the opening) may form a good protection for the surface of the substrate except the predetermined position, and also may be beneficial to improve the accuracy of the electroplating process. After this step is completed, the process of sequentially forming the copper layer 14, the nickel layer 15 and the gold layer 16 on the substrate surface is shown in fig. 3 to 5. As an example, the thickness of the nickel layer 15 is greater than the thickness of the gold layer 16 and preferably also greater than the thickness of the copper layer 14. After the nickel layer 15 is formed by electroplating, the nickel layer 15 can be subjected to reflow soldering, so that the nickel layer 15 can partially flow to the side of the copper layer 14 to form good protection for the copper layer 14, and oxidation of the copper layer 14 is avoided. Meanwhile, a groove is formed in the nickel layer 15 through reflow soldering, which is beneficial to increasing the contact area with the gold layer 16, so that the adhesion between the gold layer 16 and the nickel layer 15 is improved.
As an example, after the gold layer 16 is formed, the residual photoresist layer 17 is removed by one or a combination of wet stripping and dry etching, and the resulting structure is shown in fig. 6. A wire bonding process is then performed to electrically connect the gold layer 16 and the metal leads 18, and the resulting structure is shown in fig. 7. The metal leads 18 include, but are not limited to, one or more of gold, silver, and copper wires. Of course, in other examples, the remaining photoresist layer 17 may be removed after the wire bonding process is completed, which is not strictly limited in this embodiment, but the remaining photoresist layer 17 is preferably removed before the wire bonding process to avoid damage to the metal leads 18.
As an example, the substrate formed with the nickel layer 15 is wetted between the steps 2) and 3), i.e., after the nickel layer 15 is formed, to enhance the hydrophilicity of the substrate, which facilitates more uniform contact of the substrate with the plating solution in the subsequent plating process.
By way of example, after the electroplating process of the gold layer 16 is completed, the resulting structure may be cleaned, such as with a caustic solution, followed by drying, including but not limited to purging with a cleaning gas, or baking.
The inventor tests the method in a factory for many times, and test data shows that the resistance of the interconnection structure of the device prepared by the method is reduced by more than 10% compared with that of the interconnection structure of the device prepared by the original process, which shows that the electrical performance of the product can be effectively improved by using the packaging method. At present, the method is comprehensively popularized and used in a factory where an inventor is located.
As described above, the present invention provides a packaging method capable of improving the adhesion of a nickel layer. The packaging method comprises the following steps: 1): providing a substrate, and forming a copper layer at a preset position on the surface of the substrate through electroplating; 2) electroplating the surface of the copper layer to form a nickel layer; 3) and after the electroplating machine is electrified, placing the substrate with the nickel layer into a gold electroplating liquid tank of the electroplating machine so as to form a gold layer on the surface of the nickel layer by electroplating. In the packaging process, the electroplating equipment is powered on, and then the substrate with the nickel layer is placed into the gold electroplating solution tank to form the gold layer on the nickel layer in an electroplating way, so that the nickel and gold electroplating solutions are prevented from contacting under the condition of no current, the nickel atoms of the nickel layer and the gold atoms of the gold electroplating solution can be effectively prevented from carrying out a displacement reaction, the nickel layer is ensured not to be damaged, the adhesion between the nickel layer and the gold layer is improved, the generation of bubbles between the nickel layer and the gold layer is avoided, the falling of the nickel layer and the gold layer is avoided, and the product quality can be obviously improved. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (8)
1. The packaging method capable of improving the adhesion of the nickel layer is characterized by comprising the following steps of:
1) providing a substrate, and forming a copper layer at a preset position on the surface of the substrate through electroplating;
2) electroplating the surface of the copper layer to form a nickel layer;
3) and after the electroplating machine is electrified, placing the substrate with the nickel layer into a gold electroplating liquid tank of the electroplating machine so as to form a gold layer on the surface of the nickel layer by electroplating.
2. The method of packaging of claim 1, wherein: the packaging method further comprises the steps of forming a photoresist layer on the surface of the substrate before forming the copper layer, and exposing and developing the photoresist layer to define the preset position.
3. The method of packaging of claim 2, wherein: the packaging method further comprises the steps of removing the residual photoresist layer after the gold layer is formed, and then carrying out a wire bonding process to electrically connect the gold layer and the metal lead.
4. The method of packaging of claim 1, wherein: a chip is formed in the substrate, and the copper layer is electrically connected with the chip.
5. The method of packaging of claim 1, wherein: the packaging method further comprises the step of drying the substrate after the gold layer is formed.
6. The method of packaging of claim 1, wherein: the thickness of the nickel layer is greater than that of the gold layer.
7. The method of packaging of claim 1, wherein: the packaging method also comprises the step of forming a titanium layer on the surface of the substrate before forming a copper layer, wherein the copper layer is formed on the surface of the titanium layer.
8. The encapsulation method according to any one of claims 1 to 7, wherein: the step of wetting the substrate with the nickel layer is also included between the steps 2) and 3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010714412.7A CN113972147A (en) | 2020-07-22 | 2020-07-22 | Packaging method capable of improving adhesive force of nickel layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010714412.7A CN113972147A (en) | 2020-07-22 | 2020-07-22 | Packaging method capable of improving adhesive force of nickel layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113972147A true CN113972147A (en) | 2022-01-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010714412.7A Pending CN113972147A (en) | 2020-07-22 | 2020-07-22 | Packaging method capable of improving adhesive force of nickel layer |
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| Country | Link |
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| CN (1) | CN113972147A (en) |
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2020
- 2020-07-22 CN CN202010714412.7A patent/CN113972147A/en active Pending
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