CN113871496A - Electrode structure of photovoltaic cell and preparation method - Google Patents
Electrode structure of photovoltaic cell and preparation method Download PDFInfo
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- CN113871496A CN113871496A CN202111090165.9A CN202111090165A CN113871496A CN 113871496 A CN113871496 A CN 113871496A CN 202111090165 A CN202111090165 A CN 202111090165A CN 113871496 A CN113871496 A CN 113871496A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 36
- 239000010410 layer Substances 0.000 claims description 19
- 229910000679 solder Inorganic materials 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 3
- 239000011265 semifinished product Substances 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052709 silver Inorganic materials 0.000 abstract description 16
- 239000004332 silver Substances 0.000 abstract description 16
- 238000005245 sintering Methods 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000007772 electrode material Substances 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 38
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 238000009713 electroplating Methods 0.000 description 6
- 238000010030 laminating Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000013035 low temperature curing Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to an electrode structure of a photovoltaic cell and a preparation method thereof, and the electrode structure comprises a silicon chip and a transparent conductive film positioned on the surface of the silicon chip, wherein conductive metal wires are arranged on the surface of the transparent conductive film, a plurality of conductive metal wires are arranged on the surface of the transparent conductive film to form a specific electrode pattern, and the conductive metal wires are connected with the transparent conductive film directly or through a conductive medium to form the electrode structure of the photovoltaic cell. The preparation method disclosed by the invention does not need a high-temperature sintering process, can be applied to preparation of heterojunction photovoltaic cells, the conductivity of the conductive metal wire is higher than that of silver paste, the same consumption of electrode materials is obtained, the conversion efficiency of the photovoltaic cells is higher, the conductive metal wire prepared by a stretching process replaces high-cost silver paste, the manufacturing cost of the photovoltaic cells is reduced, the cross sections of the electrodes can be prepared into different shapes according to requirements, and the conversion efficiency of the photovoltaic cells is further improved.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to an electrode structure of a photovoltaic cell and a preparation method thereof.
Background
Photovoltaic technology has been developed in the near future and is expected to become one of the main energy sources in the future. The electrode on the surface of the photovoltaic cell can conduct the photo-generated current generated in the photovoltaic cell to the outside of the cell, and the preparation method mainly comprises two preparation methods:
1. depositing a transparent non-conductive dielectric layer on the surface of the photovoltaic cell, then depositing a silver paste layer on the partial surface of the dielectric layer, and then sintering at high temperature. Organic solvent and organic binder inside the silver paste are removed at high temperature in the sintering process, and meanwhile, the active ingredients inside the silver paste can ablate the dielectric layer below the silver paste, so that conductive channels are formed inside the silver paste and the photovoltaic cell, and the photovoltaic cell electrode can be prepared by depositing different silver paste patterns.
2. The method comprises the steps of depositing a layer of transparent conductive film on the surface of a photovoltaic cell, then depositing a layer of silver paste on the partial surface area of the conductive film, or covering a conductive material which is made of silver or copper on the partial surface area of the conductive film by an electroplating method, and then connecting electrodes with different patterns and the transparent conductive film by a low-temperature curing process without a high-temperature ablation process.
At present, the electrode of the photovoltaic cell is mainly prepared by a high-temperature sintering method in the photovoltaic industry, and the reason why the electrode of the photovoltaic cell is not prepared in a large scale by a low-temperature process is as follows: if the silver paste is directly deposited, a large amount of organic binders in the silver paste cannot be removed due to the lack of a subsequent high-temperature sintering process, so that the conductivity of the finally formed silver paste is not high. In order to maintain the conversion efficiency of the photovoltaic cell, a large amount of silver paste is required to be used, and the material cost is too high; the electrode prepared by the electroplating method has high conductivity, but the electroplating process flow is complex, firstly a local conductive area needs to be formed on the surface of the battery, then a seed layer is electroplated in the local conductive area, then a copper electrode is electroplated, and then a protective layer is electroplated on the surface of the copper electrode; and the electroplating process is not environment-friendly, and the technical requirement on waste water and waste liquid treatment is high, so that the production and operation cost for preparing the electrode by the electroplating method is overhigh.
However, since the heterojunction photovoltaic cell requires that the temperature of all cell preparation processes is lower than 200 ℃, the cell surface electrode prepared by adopting a high-temperature sintering process cannot be used for the heterojunction photovoltaic cell, and more researches are focused on the low-temperature process.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: in order to overcome the defects in the prior art, the invention provides the electrode structure of the photovoltaic cell adopting the low-temperature process and the preparation method, and the electrode structure can be applied to the preparation of the heterojunction photovoltaic cell without a high-temperature sintering process.
The technical scheme adopted by the invention for solving the technical problems is as follows: an electrode structure of a photovoltaic cell comprises a silicon wafer serving as a semi-finished product of the photovoltaic cell and a transparent conductive film positioned on the surface of the silicon wafer, wherein conductive metal wires are arranged on the surface of the transparent conductive film, a plurality of conductive metal wires are arranged on the surface of the transparent conductive film to form a specific electrode pattern, and the electrode pattern comprises but is not limited to an H-shaped electrode pattern, a parallel electrode pattern or other electrode patterns according to the photoproduction current transport requirement of the photovoltaic cell.
Meanwhile, according to the photoproduction current transport requirement of the photovoltaic cell, the plurality of conductive metal wires can form a photovoltaic cell electrode with a single-layer structure or a multi-layer structure on the surface of the transparent conductive film.
Further, a conductive medium is arranged between the transparent conductive film and the conductive metal wire, and the conductive medium includes, but is not limited to, solder paste, conductive adhesive and a conductive film, so that the conductive metal wire can be directly electrically connected with the transparent conductive film through the solder on the surface of the conductive metal wire, and can also be electrically connected with the transparent conductive film through the conductive medium.
The transparent conductive film is composed of a single-layer or multi-layer film, and the components of the transparent conductive film include but are not limited to indium-doped tin oxide, aluminum-doped zinc oxide and other oxide conductive films.
The conductive metal wire is preferably a copper wire, and other conductive metal wires can be selected; the cross section of the copper wire can be but is not limited to a circle, a rectangle, a trapezoid or other geometric figures, and the projection width of the copper wire on the transparent conductive film is less than 0.1 mm.
The surface of the copper wire is coated with a solder protection layer with the thickness of 50 nm-50 um, the components of the solder protection layer include but are not limited to tin, an alloy protection layer containing tin and other non-tin system protection layers, and the like, the solder protection layer on the surface of the copper wire can have a welding function, and the solder in the solder protection layer can be electrically connected with the transparent conductive film through a welding process.
A preparation method of an electrode structure of a photovoltaic cell comprises the following steps:
a. depositing a layer of transparent conductive film on the surface of the semi-finished silicon wafer;
b. preparing a conductive metal wire by adopting a physical stretching process;
c. and arranging the conductive metal wires on the transparent conductive film according to the electrode pattern to be electrically connected with the transparent conductive film to form a photovoltaic cell electrode.
In the step b, the diameter of the conductive metal wire prepared by stretching is 20-60 um.
And in the step b, coating a solder protective layer with the thickness of 50 nm-50 um on the surface of the conductive metal wire.
In the step c, the conductive metal wire and the transparent conductive film are connected through a conductive medium to form a photovoltaic cell electrode.
The invention has the beneficial effects that:
1. the method does not need a high-temperature sintering process, and can be applied to preparation of heterojunction photovoltaic cells;
2. the copper wire prepared from pure copper is preferentially adopted as the conductive metal wire, the conductivity of the conductive metal wire is higher than that of silver paste, the electrode material with the same consumption is adopted, and the conversion efficiency of the photovoltaic cell is higher;
3. the conductive metal material with relatively low cost replaces silver paste with high cost, and the conductive metal wire can be prepared by utilizing a corresponding metal rod through a stretching process;
4. the cross section of the electrode can be prepared into different shapes according to requirements, so that the conversion efficiency of the photovoltaic cell is further improved;
5. the metal electrode is made of conductive metal wires, and then the metal electrode is connected to the surface of a silicon wafer from top to bottom, so that the traditional method for preparing the metal electrode on the surface of a photovoltaic cell by chemical deposition or physical deposition and growth from bottom to top through printing and other processes is abandoned;
6. no need of electroplating process, simple process and low production cost.
Drawings
The invention is further illustrated with reference to the following figures and examples.
Fig. 1 is a schematic diagram of a photovoltaic cell according to the present invention.
Fig. 2 is a schematic cross-sectional structure of the present invention.
In the figure: 1. the photovoltaic cell panel comprises a photovoltaic cell panel, 2 main grid lines, 3 auxiliary grid lines, 4 silicon chips, 5 transparent conducting films, 6 conducting media and 7 copper wires.
Detailed Description
The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic views illustrating only the basic structure of the present invention in a schematic manner, and thus show only the constitution related to the present invention.
As shown in fig. 1, the photovoltaic cell includes a photovoltaic cell panel 1, main grid lines 2 are arranged on the photovoltaic cell panel in parallel at intervals, and sub-grid lines 3 are arranged in a direction perpendicular to the main grid lines 2, and the main grid lines 2 and the sub-grid lines 3 form an electrode structure of the photovoltaic cell.
Example 1:
1. depositing a transparent conducting film 5 made of tin-doped indium oxide on the surface of a silicon wafer 4 of the heterojunction battery, wherein the thickness of the transparent conducting film is 100 nm;
2. stretching the copper rod by a physical stretching process to prepare a copper wire 7 with the diameter of 50 um;
3. coating a solder protective layer with the thickness of 10um on the surface of the copper wire 7;
4. pre-fixing 150 copper wires 7 on the transparent conductive film 5 in parallel;
5. heating and controlling the temperature to be above the melting point of the solder and below 200 ℃;
6. and cooling to room temperature, and cooling and solidifying the molten solder to connect the copper wire 7 and the transparent conductive film 5 together to form the electrode.
Example 2:
1. depositing a transparent conducting film 5 made of tin-doped indium oxide on the surface of the silicon chip 4 in contact with the tunneling oxide layer passivation high-temperature battery, wherein the thickness of the transparent conducting film 5 is 80 nm;
2. stretching the copper rod by a physical stretching process to prepare a copper wire 7 with the diameter of 60 um;
3. coating a solder protective layer with the thickness of 10um on the surface of the copper wire 7;
4. pre-fixing 180 copper wires 7 on a transparent conductive film 5 in parallel;
5. heating and controlling the temperature to be higher than the melting point of the solder;
6. and cooling to room temperature, cooling and solidifying the molten solder, and connecting the copper wire 7 and the transparent conductive film 5 together to form the electrode.
Example 3:
1. depositing a transparent conducting film 5 made of tin-doped indium oxide on the surface of a silicon wafer 4 of the heterojunction battery, wherein the thickness of the transparent conducting film 5 is 50 nm;
2. preparing a copper wire 7 with the diameter of 40um by a physical stretching process;
3. coating a protective layer with the thickness of 10um on the surface of the copper wire 7;
4. printing a conductive medium 6 with conductive adhesive on the surface of the transparent conductive film 5;
5. arranging 180 copper wires on the conductive medium 6 according to a battery pattern;
6. heating to 150 ℃, curing the conductive adhesive, and connecting the copper wire 7 and the transparent conductive film 5 through the conductive medium 6 to form an electrode.
Example 4:
1. depositing a transparent conducting film 5 made of tin-doped indium oxide on the surface of a silicon wafer 4 of the heterojunction battery, wherein the thickness of the transparent conducting film 5 is 120 nm;
2. preparing a copper wire 7 with the diameter of 60um by a physical stretching process;
3. coating a solder protective layer with the thickness of 10um on the surface of the copper wire 7;
4. pre-fixing 180 copper wires 7 together according to a certain pattern;
5. laying a pre-fixed copper wire 7 on the surface of the transparent conductive film 5, and sequentially laminating glass, a packaging material, a copper wire 7 pattern, the transparent conductive film 5, the packaging material, a rear cover material and the like according to the laminating sequence of the photovoltaic module packaging material;
6. and heating and pressurizing the laminated material through a laminating machine, controlling the laminating temperature to be between 130 and 175 ℃, laminating the photovoltaic module material, and connecting the copper wire 7 and the transparent conductive film 5 together through the solder on the surface of the copper wire 7 during lamination to form a photovoltaic cell electrode.
In light of the foregoing description of the preferred embodiment of the present invention, many modifications and variations will be apparent to those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (11)
1. An electrode structure of a photovoltaic cell comprises a silicon wafer serving as a semi-finished product of the photovoltaic cell and a transparent conductive film positioned on the surface of the silicon wafer, and is characterized in that: the surface of the transparent conductive film is provided with conductive metal wires which can be arranged into H-shaped, parallel or other geometric electrode patterns.
2. The electrode structure of a photovoltaic cell according to claim 1, wherein: and a conductive medium is arranged between the transparent conductive film and the conductive metal wire.
3. The electrode structure of a photovoltaic cell according to claim 2, wherein: the conductive medium includes, but is not limited to, solder paste, conductive paste, and conductive film.
4. The electrode structure of a photovoltaic cell according to claim 1, wherein: the transparent conductive film comprises, but is not limited to, indium-doped tin oxide and aluminum-doped zinc oxide conductive films.
5. The electrode structure of a photovoltaic cell according to claim 4, wherein: the transparent conductive film is composed of a single-layer or multi-layer film.
6. The electrode structure of a photovoltaic cell according to claim 1, wherein: the conductive metal wire is a copper wire, the cross section of the copper wire can be but is not limited to a circle, a rectangle, a trapezoid or other geometric figures, and the projection width of the copper wire on the transparent conductive film is smaller than 0.1 mm.
7. The electrode structure of a photovoltaic cell according to claim 6, wherein: the surface of the copper wire is coated with a solder protective layer.
8. A preparation method of a photovoltaic cell electrode structure is characterized by comprising the following steps: comprises the following steps:
a. depositing a layer of transparent conductive film on the surface of a silicon wafer;
b. preparing a conductive metal wire by adopting a physical stretching process;
c. and arranging the conductive metal wires on the transparent conductive film according to the electrode pattern to be electrically connected with the transparent conductive film to form a photovoltaic cell electrode.
9. The method of making a photovoltaic cell electrode structure according to claim 8, wherein: in the step b, the diameter of the conductive metal wire prepared by stretching is 20-60 um.
10. The method of making a photovoltaic cell electrode structure according to claim 9, wherein: and in the step b, coating a solder protective layer with the thickness of 50 nm-50 um on the surface of the conductive metal wire.
11. The method of making a photovoltaic cell electrode structure according to claim 8, wherein: in the step c, the conductive metal wire and the transparent conductive film are connected through a conductive medium to form a photovoltaic cell electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111090165.9A CN113871496A (en) | 2021-09-17 | 2021-09-17 | Electrode structure of photovoltaic cell and preparation method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111090165.9A CN113871496A (en) | 2021-09-17 | 2021-09-17 | Electrode structure of photovoltaic cell and preparation method |
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| CN113871496A true CN113871496A (en) | 2021-12-31 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114843373A (en) * | 2022-01-27 | 2022-08-02 | 江苏日托光伏科技股份有限公司 | Preparation method of HTJ battery |
| CN115064610A (en) * | 2022-07-07 | 2022-09-16 | 隆基绿能科技股份有限公司 | Solar cell preparation method, solar cell and cell module |
-
2021
- 2021-09-17 CN CN202111090165.9A patent/CN113871496A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114843373A (en) * | 2022-01-27 | 2022-08-02 | 江苏日托光伏科技股份有限公司 | Preparation method of HTJ battery |
| CN115064610A (en) * | 2022-07-07 | 2022-09-16 | 隆基绿能科技股份有限公司 | Solar cell preparation method, solar cell and cell module |
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