CN113764544A - Processing method for improving strength of GaAs wafer - Google Patents
Processing method for improving strength of GaAs wafer Download PDFInfo
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- CN113764544A CN113764544A CN202110921776.7A CN202110921776A CN113764544A CN 113764544 A CN113764544 A CN 113764544A CN 202110921776 A CN202110921776 A CN 202110921776A CN 113764544 A CN113764544 A CN 113764544A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 106
- 238000003672 processing method Methods 0.000 title claims abstract description 26
- 238000000227 grinding Methods 0.000 claims abstract description 55
- 238000005520 cutting process Methods 0.000 claims abstract description 33
- 239000013078 crystal Substances 0.000 claims abstract description 19
- 238000005507 spraying Methods 0.000 claims abstract description 17
- 239000003513 alkali Substances 0.000 claims abstract description 11
- 230000007797 corrosion Effects 0.000 claims abstract description 11
- 238000005260 corrosion Methods 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 239000000853 adhesive Substances 0.000 claims description 40
- 230000001070 adhesive effect Effects 0.000 claims description 40
- 239000002002 slurry Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 229910003460 diamond Inorganic materials 0.000 claims description 15
- 239000010432 diamond Substances 0.000 claims description 15
- 239000004744 fabric Substances 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- 239000002270 dispersing agent Substances 0.000 claims description 10
- 239000000314 lubricant Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229960000583 acetic acid Drugs 0.000 claims description 5
- 239000013543 active substance Substances 0.000 claims description 5
- 239000012362 glacial acetic acid Substances 0.000 claims description 5
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical group C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 claims description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 5
- 239000004094 surface-active agent Substances 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000005498 polishing Methods 0.000 abstract description 3
- 238000005336 cracking Methods 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 96
- 238000001816 cooling Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 3
- 125000003827 glycol group Chemical group 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to a processing method for improving the strength of a GaAs wafer, which comprises the steps of bonding the GaAs wafer with a tool according to the crystal orientation characteristic of the GaAs wafer, cutting the bonding position of the tool wafer and the tool in an inclined spraying cutting mode, grinding the surface of the GaAs wafer, placing the GaAs wafer in a corrosion pot, corroding the GaAs wafer by using hot alkali liquor, processing by cleaning equipment and polishing equipment, and finally drying. According to the processing method for improving the strength of the GaAs wafer, the edge defects and epitaxial cracking problems generated in the epitaxial growth process of the substrate are changed by changing the change of the warping Bow value, the damage rate of the substrate generated in the epitaxial growth process is reduced, and the yield in the epitaxial growth process is improved.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the field of LED wafer production processes, in particular to a processing method for improving the strength of a GaAs wafer.
[ background of the invention ]
During the production of the wafer, the processing technology of the wafer may affect the strength of the wafer, and the possible affecting technologies are: slicing, grinding, corroding and polishing, wherein the slicing and grinding inevitably have certain damage, and the polishing and the corroding can remove part or all of the damage, but because the requirements of the acidic corrosive liquid on vessels and corrosion conditions are higher, the brightness of the surface of the wafer after corrosion is inconsistent, and the wafer is flaked, so that the wafer is fragile after epitaxy, and the yield is reduced. In view of the above-mentioned problems, it is desirable to design a processing method for improving the strength of GaAs wafers to improve the breakage rate caused by the hard force after the wafer epitaxy.
[ summary of the invention ]
In order to solve the above problems, the present invention aims to provide a processing method for improving the strength of a GaAs wafer, which solves the problems of the existing method that the brightness of the surface of the wafer after etching is inconsistent and the wafer is fragile after the wafer is subjected to epitaxy due to high requirements of the acidic etching solution on vessels and etching conditions, and the yield is reduced.
In order to achieve the purpose, the invention adopts the technical scheme that: a processing method for improving the strength of a GaAs wafer is carried out according to the following steps:
step 1: selecting a bonding position according to the crystal orientation characteristics of the GaAs wafer, coating photoresist on the surface of the GaAs wafer, spraying an adhesive A on the photoresist, spraying an adhesive B on the surface of the tool, bonding the tool and the GaAs wafer by using the adhesive A and the adhesive B, and entering the step 2;
step 2: mounting the tool bonded with the GaAs wafer obtained in the step 2 on a thinning clamp of a cutting device, adjusting the cutting azimuth structure of the cutting device, cutting the bonding position of the tool wafer and the tool by adopting an inclined spraying cutting mode to change the requirement that the Bow value is a plus value, and entering a step 3;
and step 3: taking the tool bonded with the GaAs wafer down from the thinning clamp of the cutting device, then installing the tool bonded with the GaAs wafer on the thinning clamp of the crystal orientation angle grinding equipment, grinding the GaAs wafer by using a grinding disc and grinding slurry which are pasted with grinding cloth, and entering the step 4;
and 4, step 4: taking down the GaAs wafer tool arranged on the thinning clamp of the crystal orientation angle grinding equipment in the step 3, placing the tool in an etching pot, pouring hot alkali liquor into the etching pot to carry out heating etching on the GaAs wafer bonded on the surface of the tool, wherein the etching amount is about 10um, obtaining the GaAs wafer with the cutting wafer warping degree of 1-5 um, and entering the step 5;
and 5: and (4) taking out the tool which is obtained in the step (4) and bonded with the GaAs wafer after low corrosion treatment, cleaning the tool by ultrasonic cleaning equipment, putting the tool into a clamp again to precisely polish the GaAs wafer, and finally taking out the tool and drying the GaAs wafer by centrifugal drying equipment.
The processing method for improving the strength of the GaAs wafer is further provided with the following steps: in the step 4, the hot alkali liquor comprises the following components in percentage by volume: 73 to 77 percent of hydrogen peroxide, 2.8 to 5 percent of concentrated sulfuric acid, 6.7 to 10 percent of glacial acetic acid and 8.5 to 11.5 percent of concentrated hydrochloric acid.
The processing method for improving the strength of the GaAs wafer is further provided with the following steps: in the step 3, the grinding cloth is monocrystalline diamond grinding cloth with a nano artificial diamond coating on the surface, the particle size of diamond particles in the coating is 400-600 nm, and the rotation speed of a grinding disc is 120-180 r/min.
The processing method for improving the strength of the GaAs wafer is further provided with the following steps: in the step 3, the grinding slurry comprises the following components: a lubricant, a surfactant, a dispersant, deionized water and a pH value regulator; the weight percentage is as follows: 0.5 to 4 percent of lubricant; 0.5 to 10 percent of active agent; 1 to 4 percent of dispersant; 80% -94% of deionized water; pH regulators: 0.1 to 1 percent; the pH value of the grinding slurry is 6.5-11.5, and the flow rate of the slurry is 2-3 ml/s.
The processing method for improving the strength of the GaAs wafer is further provided with the following steps: in the step 1, the adhesive A sprayed on the photoresist is hexamethyldisilane adhesive.
The processing method for improving the strength of the GaAs wafer is further provided with the following steps: in the step 1, the adhesive B is sprayed on the photoresist by spraying ethylene glycol titanate adhesive on the surface of the tool in a vacuum environment with the temperature of 135-150 ℃ and the vacuum degree of less than or equal to 1 x 10 < -2 > mbar.
The processing method for improving the strength of the GaAs wafer is further provided with the following steps: in the step 1, after the tool is bonded with the GaAs wafer, the process further comprises cooling the tool bonded with the GaAs wafer to room temperature of 20-24 ℃.
Compared with the prior art, the invention has the following beneficial effects:
according to the processing method for improving the strength of the GaAs wafer, the problem of edge defects and epitaxial cracking of the substrate in the epitaxial growth process is solved by changing the change of the warping Bow value, the damage rate of the substrate in the epitaxial growth process can be reduced, and the yield in the epitaxial growth process is improved.
[ detailed description ] embodiments
The processing method for improving the strength of the GaAs wafer according to the present invention is further described in detail with reference to the following embodiments.
Example 1
The processing method for improving the strength of the GaAs wafer comprises the following steps:
step 1: selecting a bonding position according to the crystal orientation characteristics of a GaAs wafer, coating photoresist on the surface of the GaAs wafer, spraying an adhesive A on the photoresist, wherein the adhesive A is a hexamethyldisilane adhesive, placing a tool in a vacuum environment with the temperature of 135-150 ℃ and the vacuum degree of less than or equal to 1 x 10 < -2 > mbar, spraying an adhesive B on the surface of the tool, wherein the adhesive B is a glycol titanate adhesive, bonding the tool and the GaAs wafer by using the adhesive A and the adhesive B, cooling the tool bonded with the GaAs wafer to the room temperature of 20-24 ℃, and entering a step 2;
step 2: mounting the tool bonded with the GaAs wafer obtained in the step 2 on a thinning clamp of a cutting device, adjusting the cutting azimuth structure of the cutting device, cutting the bonding position of the tool wafer and the tool by adopting an inclined spraying cutting mode to change the requirement that the Bow value is a plus value, and entering a step 3;
and step 3: the tool bonded with the GaAs wafer is taken down from the thinning clamp of the cutting device, the tool bonded with the GaAs wafer is installed on the thinning clamp of the crystal orientation angle grinding equipment, the grinding disc bonded with the grinding cloth and the grinding slurry are adopted to grind the GaAs wafer, the grinding cloth adopts single crystal diamond grinding cloth with a nano artificial diamond coating on the surface, the grain diameter of diamond grains in the coating is 400 nm-600 nm, the rotating speed of the grinding disc is 120-180 r/min, and the grinding slurry comprises the following components: a lubricant, a surfactant, a dispersant, deionized water and a pH value regulator; the weight percentage is as follows: 0.5 to 4 percent of lubricant; 0.5 to 10 percent of active agent; 1 to 4 percent of dispersant; 80% -94% of deionized water; pH regulators: 0.1 to 1 percent; the pH value of the grinding slurry is 6.5-11.5, the flow rate of the slurry is 2-3 ml/s, and the step 4 is carried out;
and 4, step 4: taking down the GaAs wafer tool arranged on the thinning clamp of the crystal orientation angle grinding equipment in the step 3, placing the GaAs wafer tool in an etching pot, pouring hot alkali liquor into the etching pot to heat and etch the GaAs wafer bonded on the surface of the tool, wherein the hot alkali liquor comprises the following components in percentage by volume: hydrogen peroxide 73-77%, concentrated sulfuric acid 2.8-5%, glacial acetic acid 6.7-10%, concentrated hydrochloric acid 8.5-11.5%, and the corrosion amount is about 10um, so as to obtain a GaAs wafer with the warpage of a cut wafer being 1-5 um, and entering the step 5;
and 5: and (4) taking out the tool which is obtained in the step (4) and bonded with the GaAs wafer after low corrosion treatment, cleaning the tool by ultrasonic cleaning equipment, putting the tool into a clamp again to precisely polish the GaAs wafer, and finally taking out the tool and drying the GaAs wafer by centrifugal drying equipment.
Example 1
The processing method for improving the strength of the GaAs wafer comprises the following steps:
step 1: selecting a bonding position according to the crystal orientation characteristics of a GaAs wafer, coating photoresist on the surface of the GaAs wafer, spraying an adhesive A on the photoresist, wherein the adhesive A is a hexamethyldisilane adhesive, placing a tool in a vacuum environment with the temperature of 135-150 ℃ and the vacuum degree of less than or equal to 1 x 10 < -2 > mbar, spraying an adhesive B on the surface of the tool, wherein the adhesive B is a glycol titanate adhesive, bonding the tool and the GaAs wafer by using the adhesive A and the adhesive B, cooling the tool bonded with the GaAs wafer to the room temperature of 20-24 ℃, and entering a step 2;
step 2: mounting the tool bonded with the GaAs wafer obtained in the step 2 on a thinning clamp of a cutting device, adjusting the cutting azimuth structure of the cutting device, cutting the bonding position of the tool wafer and the tool by adopting an inclined spraying cutting mode to change the requirement that the Bow value is a plus value, and entering a step 3;
and step 3: the tool bonded with the GaAs wafer is taken down from the thinning clamp of the cutting device, the tool bonded with the GaAs wafer is installed on the thinning clamp of the crystal orientation angle grinding equipment, the grinding disc bonded with the grinding cloth and the grinding slurry are adopted to grind the GaAs wafer, the grinding cloth adopts single crystal diamond grinding cloth with a nano artificial diamond coating on the surface, the grain diameter of diamond grains in the coating is 400 nm-600 nm, the rotating speed of the grinding disc is 120-180 r/min, and the grinding slurry comprises the following components: a lubricant, a surfactant, a dispersant, deionized water and a pH value regulator; the weight percentage is as follows: 0.5 to 4 percent of lubricant; 0.5 to 10 percent of active agent; 1 to 4 percent of dispersant; 80% -94% of deionized water; pH regulators: 0.1 to 1 percent; the pH value of the grinding slurry is 6.5-11.5, the flow rate of the slurry is 2-3 ml/s, and the step 4 is carried out;
and 4, step 4: taking down the GaAs wafer tool arranged on the thinning clamp of the crystal orientation angle grinding equipment in the step 3, placing the GaAs wafer tool in an etching pot, pouring hot alkali liquor into the etching pot to heat and etch the GaAs wafer bonded on the surface of the tool, wherein the hot alkali liquor comprises the following components in percentage by volume: hydrogen peroxide 73-77%, concentrated sulfuric acid 2.8-5%, glacial acetic acid 6.7-10%, concentrated hydrochloric acid 8.5-11.5%, and the corrosion amount is about 10um, so as to obtain a GaAs wafer with the warpage of a cut wafer being 1-5 um, and entering the step 5;
and 5: and (4) taking out the tool which is obtained in the step (4) and bonded with the GaAs wafer after low corrosion treatment, cleaning the tool by ultrasonic cleaning equipment, putting the tool into a clamp again to precisely polish the GaAs wafer, and finally taking out the tool and drying the GaAs wafer by centrifugal drying equipment.
Example 2
The GaAs wafer strength processing method comprises the following steps:
step 1: selecting a bonding position according to the crystal orientation characteristics of a GaAs wafer, coating photoresist on the surface of the GaAs wafer, spraying an adhesive A on the photoresist, wherein the adhesive A is a hexamethyldisilane adhesive, placing a tool in a vacuum environment with the temperature of 135-150 ℃ and the vacuum degree of less than or equal to 1 x 10 < -2 > mbar, spraying an adhesive B on the surface of the tool, wherein the adhesive B is a glycol titanate adhesive, bonding the tool and the GaAs wafer by using the adhesive A and the adhesive B, cooling the tool bonded with the GaAs wafer to the room temperature of 20-24 ℃, and entering a step 2;
step 2: mounting the tool bonded with the GaAs wafer obtained in the step (2) on a thinning clamp of a cutting device, adjusting a cutting azimuth structure of the cutting device, cutting the bonding position of the tool wafer and the tool, and entering a step (3);
and step 3: the tool bonded with the GaAs wafer is taken down from the thinning clamp of the cutting device, the tool bonded with the GaAs wafer is installed on the thinning clamp of the crystal orientation angle grinding equipment, the grinding disc bonded with the grinding cloth and the grinding slurry are adopted to grind the GaAs wafer, the grinding cloth adopts single crystal diamond grinding cloth with a nano artificial diamond coating on the surface, the grain diameter of diamond grains in the coating is 400 nm-600 nm, the rotating speed of the grinding disc is 120-180 r/min, and the grinding slurry comprises the following components: lubricant, surfactant, dispersant and deionized water; the weight percentage is as follows: 1% -3% of a lubricant; 0.5 to 10 percent of active agent; 1 to 4 percent of dispersant; 60% -80% of deionized water; the pH value of the grinding slurry is 6.5-11.5, the flow rate of the slurry is 1-2 ml/s, and the step 4 is carried out;
and 4, step 4: taking down the GaAs wafer tool arranged on the thinning clamp of the crystal orientation angle grinding equipment in the step 3, placing the GaAs wafer tool in an etching pot, pouring hot alkali liquor into the etching pot to heat and etch the GaAs wafer bonded on the surface of the tool, wherein the hot alkali liquor comprises the following components in percentage by volume: 77% -82% of hydrogen peroxide, 1.8% -3.5% of concentrated sulfuric acid, 4.7% -8% of glacial acetic acid and 6.5% -9.5% of concentrated hydrochloric acid, wherein the corrosion amount is about 10um, the GaAs wafer with the Bow value of 1-5 um is obtained, and the step 5 is carried out;
and 5: and (4) taking out the tool which is obtained in the step (4) and bonded with the GaAs wafer after low corrosion treatment, cleaning the tool by ultrasonic cleaning equipment, putting the tool into a clamp again to precisely polish the GaAs wafer, and finally taking out the tool and drying the GaAs wafer by centrifugal drying equipment.
The result of the detection
The strength of the wafer of example 1 treated according to the invention can be increased by 50% compared to the wafer of example 2.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (7)
1. A processing method for improving the strength of a GaAs wafer is characterized by comprising the following steps:
step 1: selecting a bonding position according to the crystal orientation characteristics of the GaAs wafer, coating photoresist on the surface of the GaAs wafer, spraying an adhesive A on the photoresist, spraying an adhesive B on the surface of the tool, bonding the tool and the GaAs wafer by using the adhesive A and the adhesive B, and entering the step 2;
step 2: mounting the tool bonded with the GaAs wafer obtained in the step 2 on a thinning clamp of a cutting device, adjusting the cutting azimuth structure of the cutting device, cutting the bonding position of the tool wafer and the tool by adopting an inclined spraying cutting mode to change the requirement that the Bow value is a plus value, and entering a step 3;
and step 3: taking the tool bonded with the GaAs wafer down from the thinning clamp of the cutting device, then installing the tool bonded with the GaAs wafer on the thinning clamp of the crystal orientation angle grinding equipment, grinding the GaAs wafer by using a grinding disc and grinding slurry which are pasted with grinding cloth, and entering the step 4;
and 4, step 4: taking down the GaAs wafer tool arranged on the thinning clamp of the crystal orientation angle grinding equipment in the step 3, placing the tool in an etching pot, pouring hot alkali liquor into the etching pot to carry out heating etching on the GaAs wafer bonded on the surface of the tool, wherein the etching amount is about 10um, obtaining the GaAs wafer with the cutting wafer warping degree of 1-5 um, and entering the step 5;
and 5: and (4) taking out the tool which is obtained in the step (4) and bonded with the GaAs wafer after low corrosion treatment, cleaning the tool by ultrasonic cleaning equipment, putting the tool into a clamp again to precisely polish the GaAs wafer, and finally taking out the tool and drying the GaAs wafer by centrifugal drying equipment.
2. The processing method for improving the strength of the GaAs wafer as claimed in claim 1, wherein: in the step 4, the hot alkali liquor comprises the following components in percentage by volume: 73 to 77 percent of hydrogen peroxide, 2.8 to 5 percent of concentrated sulfuric acid, 6.7 to 10 percent of glacial acetic acid and 8.5 to 11.5 percent of concentrated hydrochloric acid.
3. The processing method for improving the strength of the GaAs wafer as claimed in claim 1, wherein: in the step 3, the grinding cloth is monocrystalline diamond grinding cloth with a nano artificial diamond coating on the surface, the particle size of diamond particles in the coating is 400-600 nm, and the rotation speed of a grinding disc is 120-180 r/min.
4. The processing method for improving the strength of the GaAs wafer as claimed in claim 1, wherein: in step 3, the grinding slurry comprises the following components: a lubricant, a surfactant, a dispersant, deionized water and a pH value regulator; the weight percentage is as follows: 0.5 to 4 percent of lubricant; 0.5 to 10 percent of active agent; 1 to 4 percent of dispersant; 80% -94% of deionized water; pH regulators: 0.1 to 1 percent; the pH value of the grinding slurry is 6.5-11.5, and the flow rate of the slurry is 2-3 ml/s.
5. The processing method for improving the strength of the GaAs wafer as claimed in claim 1, wherein: in step 1, the adhesive A sprayed on the photoresist is hexamethyldisilane adhesive.
6. The processing method for improving the strength of the GaAs wafer as claimed in claim 1, wherein: in the step 1, the adhesive B is sprayed on the photoresist by spraying ethylene glycol titanate adhesive on the surface of the tool in a vacuum environment with the temperature of 135-150 ℃ and the vacuum degree of less than or equal to 1 x 10 < -2 > mbar.
7. The processing method for improving the strength of the GaAs wafer as claimed in claim 1, wherein: in the step 1, after the tool is bonded with the GaAs wafer, the tool bonded with the GaAs wafer is cooled to room temperature of 20-24 ℃.
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| CN202110921776.7A CN113764544A (en) | 2021-08-12 | 2021-08-12 | Processing method for improving strength of GaAs wafer |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5942445A (en) * | 1996-03-25 | 1999-08-24 | Shin-Etsu Handotai Co., Ltd. | Method of manufacturing semiconductor wafers |
| CN102427034A (en) * | 2011-11-23 | 2012-04-25 | 中国科学院微电子研究所 | Method of carrying out mirror polishing and thinning on GaAs wafer with ultrathin thickness |
| US20120329369A1 (en) * | 2011-06-27 | 2012-12-27 | Kabushiki Kaisha Toshiba | Substrate processing method and substrate processing apparatus |
| CN106702492A (en) * | 2017-02-24 | 2017-05-24 | 江西德义半导体科技有限公司 | Gallium arsenide ultrathin substrate and application thereof |
| CN112251818A (en) * | 2020-09-29 | 2021-01-22 | 威科赛乐微电子股份有限公司 | Wafer etching solution and etching method |
| CN113206007A (en) * | 2021-04-30 | 2021-08-03 | 中锗科技有限公司 | Preparation method of indium phosphide substrate |
-
2021
- 2021-08-12 CN CN202110921776.7A patent/CN113764544A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5942445A (en) * | 1996-03-25 | 1999-08-24 | Shin-Etsu Handotai Co., Ltd. | Method of manufacturing semiconductor wafers |
| US20120329369A1 (en) * | 2011-06-27 | 2012-12-27 | Kabushiki Kaisha Toshiba | Substrate processing method and substrate processing apparatus |
| CN102427034A (en) * | 2011-11-23 | 2012-04-25 | 中国科学院微电子研究所 | Method of carrying out mirror polishing and thinning on GaAs wafer with ultrathin thickness |
| CN106702492A (en) * | 2017-02-24 | 2017-05-24 | 江西德义半导体科技有限公司 | Gallium arsenide ultrathin substrate and application thereof |
| CN112251818A (en) * | 2020-09-29 | 2021-01-22 | 威科赛乐微电子股份有限公司 | Wafer etching solution and etching method |
| CN113206007A (en) * | 2021-04-30 | 2021-08-03 | 中锗科技有限公司 | Preparation method of indium phosphide substrate |
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