CN113686809A - Pixel unit, forming method, display and terahertz imaging system - Google Patents
Pixel unit, forming method, display and terahertz imaging system Download PDFInfo
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Abstract
The invention provides a pixel unit, a forming method, a display and a terahertz imaging system. In the terahertz imaging system integrated with the pixel unit, terahertz light waves emitted by a terahertz radiation source module irradiate on an object to be detected, the terahertz light waves are focused and emitted through an optical focuser after being transmitted or reflected from the object, focusing signals are emitted to a metamaterial layer, and optical signals form electric signals through the metamaterial layer. The thin film transistor receives the electric signal of the metamaterial layer, amplifies and extracts the electric signal, and the electric signal is used for controlling the deflection of the liquid crystal to achieve the lighting and dimming of the pixel points, so that the display of the image is achieved. The technical scheme of the invention provides an applicable scheme for miniaturization, controllability and large-area detection array of the terahertz imaging system.
Description
Technical Field
The invention relates to the field of terahertz imaging, in particular to a pixel unit, a forming method, a display and a terahertz imaging system.
Background
Currently, Terahertz (Terahertz, abbreviated as THz, 1THz ═ 1012Hz) wave refers to a wave having a frequency range of 0.1-10THz, a corresponding wavelength of 3mm-30 μm, and a frequency band between millimeter waves and infrared optics. The development of the terahertz time-domain spectroscopy technology based on the ultrafast laser promotes the rapid development of the terahertz technology. In nature, both an object and a material can radiate a specific terahertz spectrum outwards, so that terahertz can be applied to the fields of imaging detection, security inspection and the like. Meanwhile, because the photon energy of the terahertz radiation is very low, the nondestructive detection of the measured substance can be realized.
Therefore, how to provide a terahertz imaging system is a subject of general consideration in the industry.
Disclosure of Invention
The invention provides a pixel unit, a forming method, a display and a terahertz imaging system, which are used for solving the technical problem that the terahertz imaging feasibility in the prior art is not high.
In a first aspect, the present invention provides a pixel cell, comprising:
the thin film transistor is positioned on the glass substrate, and the liquid crystal layer is positioned on one side adjacent to the thin film transistor;
wherein the thin film transistor includes:
the grid electrode is positioned on the glass substrate, and the source electrode and the drain electrode are positioned on two sides of the grid electrode;
a dielectric layer located on the thin film transistor, wherein a first conductive plug and a second conductive plug are formed in the dielectric layer;
the metamaterial layer is positioned on the dielectric layer;
any two poles of the grid electrode, the source electrode and the drain electrode are electrically connected with the metamaterial layer through the first conductive plug and the second conductive plug respectively;
the liquid crystal layer comprises a bottom pixel electrode and liquid crystal positioned on the bottom pixel electrode, and an output electrode in the source electrode and the drain electrode is electrically connected with the bottom pixel electrode.
According to the pixel unit provided by the invention, the metamaterial layer is at least one of a linear shape, a cross shape, a fishing net shape, a rectangular ring shape, a zigzag shape, an open ring shape, an H shape and a nested multi-layer open ring shape.
According to the pixel unit provided by the invention, the metamaterial layer is made of copper, aluminum, gold, graphene, silicon dioxide or silicon nitride.
According to a pixel unit provided by the present invention, the thin film transistor further includes:
a gate insulating layer and a channel layer formed in a vertical direction;
the grid electrode is isolated from the source electrode and the drain electrode along the vertical direction through the grid insulating layer;
the channel layer has at least a channel region between the source and drain electrodes, the channel layer being isolated from the gate electrode by the gate insulating layer in the vertical direction.
In a second aspect, the present invention further provides a display, which includes the pixel units arranged in an array.
In a third aspect, the present invention further provides a terahertz imaging system, including:
a terahertz radiation source module;
the above display;
an optical focuser positioned on an optical path of the terahertz radiation source module between the terahertz radiation source module and the metamaterial layer;
the optical focuser is arranged to:
and carrying out optical focusing on the terahertz light waves emitted by the terahertz radiation source module, and enabling focusing signals to be incident to the metamaterial layer.
In a fourth aspect, the present invention further provides a method for forming a pixel unit, including:
forming a thin film transistor on a glass substrate, wherein the thin film transistor comprises a grid electrode, a source electrode and a drain electrode, and the source electrode and the drain electrode are positioned on two sides of the grid electrode;
forming a dielectric layer on the thin film transistor;
forming a first conductive plug and a second conductive plug in the dielectric layer, wherein the first conductive plug and the second conductive plug are respectively and electrically connected with any two poles of the grid, the source and the drain;
and forming a metamaterial layer on the dielectric layer, wherein the metamaterial layer is electrically connected with the first conductive plug and the second conductive plug.
According to the forming method of the pixel unit provided by the invention, the forming of the metamaterial layer on the dielectric layer comprises the following steps:
depositing a metamaterial on the dielectric layer;
and carrying out patterning treatment on the metamaterial to obtain the metamaterial layer.
According to the forming method of the pixel unit provided by the invention, the formation of the first conductive plug and the second conductive plug in the dielectric layer and the formation of the metamaterial layer on the dielectric layer are realized in the same manufacturing process, and the forming method comprises the following steps:
forming a first through hole and a second through hole in the dielectric layer, wherein the first through hole and the second through hole respectively expose any two poles of the grid, the source and the drain;
depositing a metamaterial on the dielectric layer, wherein the metamaterial is higher than the upper surface of the dielectric layer and fills the first through hole and the second through hole;
and grinding the metamaterial, wherein the residual metamaterial higher than the dielectric layer is ground to be used as the metamaterial layer, and the residual metamaterial in the first through hole and the second through hole is used as the first conductive plug and the second conductive plug.
In the pixel unit, the metamaterial layer is electrically connected with the input electrode in the thin film transistor through the conductive plug so as to be integrated with the thin film transistor, and the thin film transistor is electrically connected with the bottom pixel electrode of the liquid crystal layer through the output electrode. In the terahertz imaging system integrated with the pixel unit, terahertz light waves emitted by a terahertz radiation source module irradiate on an object to be detected, the terahertz light waves are focused and emitted through an optical focuser after being transmitted or reflected from the object, focusing signals are emitted to a metamaterial layer, and optical signals form electric signals through the metamaterial layer. The thin film transistor receives the electric signal of the metamaterial layer, amplifies and extracts the electric signal, and the electric signal is used for controlling the deflection of the liquid crystal to achieve the lighting and dimming of the pixel points, so that the display of the image is achieved. The technical scheme of the invention provides an applicable scheme for miniaturization, controllability and large-area detection array of the terahertz imaging system.
Drawings
In order to more clearly illustrate the technical solutions of the present invention or the prior art, the drawings needed for the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 is a schematic cross-sectional structural diagram of a pixel unit according to an embodiment of the invention;
FIG. 2 is a schematic structural diagram of a terahertz imaging system provided by an embodiment of the invention;
FIG. 3 is a schematic diagram illustrating an operating principle of a terahertz imaging system provided by an embodiment of the present invention;
FIG. 4 is a top view of a metamaterial layer in a pixel unit according to an embodiment of the invention;
fig. 5 is a second schematic cross-sectional view of a pixel unit according to an embodiment of the invention;
fig. 6 is a schematic cross-sectional structural diagram of a thin film transistor according to an embodiment of the present invention;
FIG. 7 is a second schematic cross-sectional view of a thin film transistor according to an embodiment of the present invention;
fig. 8 is a third schematic cross-sectional view of a thin film transistor according to an embodiment of the present invention;
fig. 9 is a schematic flow chart of a method for forming a pixel unit according to an embodiment of the invention;
fig. 10-13 are schematic cross-sectional views of various stages in the formation of a pixel unit according to an embodiment of the invention;
fig. 14-16 are schematic cross-sectional views of the second embodiment of the pixel unit in various stages of the formation process.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Feasibility research on terahertz imaging shows that the frequency band and the millimeter wave frequency band of the conventional terahertz imaging system are overlapped, the processes of the conventional terahertz imaging system are mainly Complementary Metal Oxide Semiconductor (CMOS) process and Micro Electro Mechanical System (MEMS) process, the conventional terahertz imaging technology based on the two processes has a small imaging range, and the single-pixel unit cannot be controlled. Most applications are still in the laboratory phase and true large-scale engineering applications have not yet begun.
The present invention is directed to a Thin-Film Transistor TFT (Thin-Film Transistor), which is a special field-effect Transistor. The TFT is similar to a Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in structure and operation principle, and is used for a switching element of a display in current mainstream applications. This also determines that the TFT can be used as an electrically controlled switch for the device cell. Meanwhile, the TFT process can realize the preparation of large-scale arrays, so that the TFT process provides mature process compatibility in the aspect of array imaging.
Meanwhile, Metamaterials (Metamaterials), also called artificial specific materials, are artificial electromagnetic media in which micro-nano-scale units are manufactured artificially and arranged and distributed according to a certain rule, and the working principle of the metamaterial can be roughly summarized as that the unit size is smaller than the wavelength of a working frequency band, so that the metamaterial can be regarded as a material with uniform performance relative to the working wavelength. Compared with natural materials, metamaterials have the advantage that the adjustment of the property parameters (mainly dielectric constant and magnetic permeability) of the materials can be realized through manual design, so that the characteristics superior to or even different from those of the natural materials are obtained. Nowadays, metamaterials have a plurality of wide applications, such as stealth coatings, perfect lenses, metamaterial antennas and the like.
This provides the possibility for the metamaterial layer to be applied to terahertz imaging systems.
The embodiment of the invention provides a terahertz imaging scheme, wherein a metamaterial layer and a thin film transistor are integrated to form a single pixel unit, and the single pixel unit and a liquid crystal layer are integrated to form a single active Focal Plane Array (FPA) applied to a terahertz imaging system. The technology can realize non-contact detection of the hidden object.
Referring to fig. 1, a pixel unit provided in an embodiment of the present invention includes:
a thin film transistor 10 on a glass substrate 22 and a liquid crystal layer 21 on a side adjacent to the thin film transistor;
the thin film transistor 10 includes:
a gate electrode 11 located on the glass substrate 22, and a source electrode 12 and a drain electrode 13 located on both sides of the gate electrode 11, the positional relationship of the source electrode 12 and the drain electrode 13 is not limited to that shown in fig. 1, and may be interchanged;
a dielectric layer 14 positioned on the thin film transistor 10, wherein a first conductive plug 15 and a second conductive plug 16 are formed in the dielectric layer 14;
a metamaterial layer 17 on the dielectric layer 14;
the source electrode 12 and the drain electrode 13 are electrically connected with the metamaterial layer 17 through a first conductive plug 15 and a second conductive plug 16 respectively;
the liquid crystal layer 21 includes a bottom pixel electrode 23 and a top pixel electrode 24 formed along a vertical direction AA, and a liquid crystal 25 located between the bottom pixel electrode 23 and the top pixel electrode 24, and the drain electrode 13 is an output electrode and electrically connected to the bottom pixel electrode 23.
For the pixel unit of the embodiment of the invention, when the metamaterial layer 17 receives the terahertz light wave, the optical signal is converted into the electrical signal, and the electrical signal affects the voltage between the source electrode 12 and the drain electrode 13, so as to change the output voltage of the thin film transistor 10, thereby realizing the on-off of the thin film transistor or the strength of the output electrical signal.
The type of the TFT in the embodiment of the invention can be a metal oxide thin film transistor, and can also be an amorphous silicon thin film transistor or a polycrystalline silicon thin film transistor.
The liquid crystal is an intermediate state substance with partial properties of crystal and liquid, has optical and dielectric anisotropy, and can realize the change of light and shade by changing the direction of a director of liquid crystal molecules by changing bias voltage. Specifically, the liquid crystal 25 may include, but is not limited to, biphenyl liquid crystal, phenylcyclohexane liquid crystal, ester liquid crystal, and the like
In this way, the electric signal of the metamaterial layer 17 collected by the thin film transistor 10 is transmitted to the bottom pixel electrode 23 through the drain electrode 13, and the deflection of the liquid crystal 25 is controlled to realize the brightness change of the pixel point corresponding to the liquid crystal 25, thereby realizing the display of the image.
In the embodiment of the present invention, the drain electrode 13 is an output electrode of the thin film transistor 10 and is electrically connected to the bottom pixel electrode 23.
In an alternative embodiment of the present invention, the source electrode may also be used as the output electrode of the thin film transistor, and the bottom pixel electrode may be electrically connected to the source electrode.
In alternative embodiments of the present invention, the liquid crystal layer may not include a top pixel electrode.
In a specific application, please refer to the terahertz imaging system shown in fig. 2, which includes:
a terahertz radiation source module 31;
a display 32 using the pixel unit shown in fig. 1, wherein the display 32 includes the pixel unit shown in fig. 1 and a display panel 33 arranged in an array;
an optical focuser 34 located on an optical path of the terahertz radiation source module 31 between the terahertz radiation source module 31 and the metamaterial layer 17;
the optical focuser 34 is arranged to:
and optically focusing the terahertz wave of the terahertz radiation source module 31, and enabling a focusing signal to be incident to the metamaterial layer 17.
With reference to fig. 3, the operating principle of the terahertz imaging system shown in fig. 2 is as follows:
the terahertz radiation source module 31 emits terahertz light waves, and the terahertz light waves emitted by the terahertz radiation source module irradiate on the object to be detected 40;
signals reflected by or transmitted from the object 40 by the terahertz waves pass through the optical focuser 34 and impinge on the imaging plane of the metamaterial layer 17. Due to the special properties of the metamaterial layer 17, the signals passing through the imaging plane of the metamaterial layer 17 will form electrical signals inside the metamaterial layer 17.
The array of thin film transistors 10 receives, amplifies and extracts the imaging signal passing through the metamaterial layer 17, and the signal is used to control the deflection of the liquid crystal 25 (shown in fig. 1) to realize the lighting and dimming of the pixel points, and finally the display of the image is realized through the display panel 33.
By utilizing the technical scheme of the embodiment of the invention, the metamaterial layer is electrically connected with the TFT through the conductive plug, the metamaterial layer receives optical signals and converts the optical signals into electric signals and transmits the electric signals to the TFT, the output signals of the metamaterial layer are extracted by the TFT and are used as switching signals to modulate the on and off of the liquid crystal pixel points, the detection array can be expanded into a large-scale controllable detection array through the TFT-LCD panel process, and compared with local imaging images of other imaging technologies, the images imaged by the scheme have higher spatial resolution and higher imaging speed.
Therefore, the coupling effect between the terahertz and the metamaterial is utilized, the isolated imaging of the hidden object can be realized, meanwhile, due to the designability of the metamaterial, different arrays are obtained according to different detection environments by customizing according to different characteristic frequencies of an object to be detected, and in addition, due to the high integration of devices and the large-scale production of the TFT technology, the portability and the simplified cost of the system can be realized.
The TFT array used by the terahertz imaging system provided by the embodiment of the invention has wide sources, and can be used for displaying the TFT array used for displaying in the previous generation display line, so that the cost is greatly reduced. Meanwhile, the TFT process is flexible, the large-scale array production technology is mature, and the price is further reduced by using the simplified TFT process.
Furthermore, an operational amplifier based on a thin film transistor is used in the terahertz imaging system, so that the integration level and compatibility of the currently used imaging equipment can be improved, and a peripheral supporting circuit is simplified.
The thin film transistor technology used in the embodiment of the invention not only comprises 5 generation display lines and 4.5 generation display lines, but also is suitable for the advanced generation display line technology. The embodiment of the invention provides an applicable scheme for miniaturization, controllability and large-area detection array of a terahertz imaging system.
According to the embodiment of the invention, the operational amplifier based on the thin film transistor is used in the terahertz imaging system, so that the integration level and compatibility of the currently used imaging equipment can be improved, and a peripheral supporting circuit is simplified.
The technical scheme of the embodiment of the invention can realize non-contact detection of the hidden object, and because the response characteristic of the metamaterial to the terahertz light wave depends on the material and the structural design of the metamaterial, the technical scheme can realize a large-scale array with scene adaptability and customizable size by expanding and optimizing the metamaterial according to different application scenes. The terahertz imaging system provided by the embodiment of the invention has great advantages in non-contact imaging aspects such as medical detection, cultural relic identification, security check and the like.
In addition, the terahertz wave has very high application advantages as a potential frequency band of 6G communication in future both in interplanetary communication and ground communication, and the technical scheme of the embodiment of the invention has potential application value in an electrically controllable modulation end or a large-area receiving end of terahertz communication.
The terahertz imaging system can realize active imaging, and compared with passive imaging, the intensity of a detected signal of the active imaging is improved by several orders of magnitude, so that the requirement on the sensitivity of a receiver is reduced. The active imaging system can use a continuous wave signal source and can also use a pulse wave source to irradiate the target to be measured.
The terahertz imaging system provided by the embodiment of the invention can realize large-area expansion of an imaging panel and greatly shorten single detection time based on terahertz imaging of a TFT technology. Based on the development of display line replacement technology, the cost can be obviously reduced by preparing the TFT array. According to the technical scheme provided by the embodiment of the invention, through the integration of the TFT and the metamaterial, the single pixel point in the imaging system can be controlled, and the imaging image can be presented and optimized better.
The terahertz radiation source module 31 is used for generating terahertz radiation signals, and can use one of a vacuum electron source, a photoconductive antenna source, a quantum cascade laser source or a femtosecond laser-induced spintronics source, and meanwhile, the quantum cascade laser source and the spintronics source can be integrated with a TFT controllable metamaterial layer.
The terahertz imaging system may further include a storage module 35. Terahertz imaging signals collected by the TFT control liquid crystal deflection to realize pixel point brightness change, so that image display is realized, and meanwhile, the signals can be stored through the storage module 35, so that subsequent expansion and utilization are facilitated. Specifically, the storage module 35 converts the original analog signal (voltage signal) into a digital signal and performs channel correction, storage processing, and the like when operating.
The embodiment of the invention protects the display integrated with the pixel units, the pixel units in the display are arranged on the panel in an array mode, and images are displayed on the panel. By expanding the pixel unit array, signals of multi-point pixels can be acquired at one time during imaging, and imaging time is greatly shortened. In practical application, the detection efficiency and speed can be improved, and the cost is saved.
In an embodiment of the present invention, with reference to fig. 4 in combination, the metamaterial layer 17 (see fig. 1) may be in a cross shape, and an imaging surface formed by the cross shape is used for receiving terahertz imaging signals.
In another embodiment, the metamaterial layer may be at least one of a linear shape, a cross shape, a fishing net shape, a rectangular ring shape, a zigzag shape, an open ring shape, an H shape, and a nested multi-layer open ring shape, or other shapes, and the shape is not limited herein on the basis of ensuring the imaging surface, and can be selected according to needs.
In an embodiment of the invention, referring to fig. 1, the material of the metamaterial layer 17 may be copper, aluminum, gold, graphene, silicon dioxide, or silicon nitride, which is not limited herein. With reference to the above description of metamaterials, conventional metallic materials or non-metallic materials can be artificially processed into materials with micro-nano scale units.
In the embodiment shown in fig. 1, the metamaterial layer 17 is electrically connected to the source electrode 12 and the drain electrode 13.
In an alternative embodiment of the present invention, referring to fig. 5, the metamaterial layer 51 is electrically connected to the gate electrode 52 and the source electrode 53 through the conductive plugs 54, and the drain electrode 55 is electrically connected to the bottom pixel electrode 56 of the liquid crystal layer.
Therefore, any two poles of the gate electrode, the source electrode and the drain electrode in the thin film transistor of the embodiment of the invention can be electrically connected with the metamaterial layer through the first conductive plug and the second conductive plug respectively.
In an embodiment of the present invention, referring to fig. 1, the thin film transistor may further include:
a gate insulating layer 18 and a channel layer 19 formed in a vertical direction AA;
the gate electrode 11 is isolated from the source electrode 12 and the drain electrode 13 by a gate insulating layer 18 in a vertical direction AA;
the channel layer 19 has at least a channel region between the source electrode 12 and the drain electrode 13, and the channel layer 19 is isolated from the gate electrode 11 by the gate insulating layer 18 in the vertical direction AA.
Specifically, the upper surface of the gate electrode 11 is lower than the lower surfaces of the source and drain electrodes 12 and 13, and the gate insulating layer 18 covers the gate electrode 11 and the glass substrate 22. The channel layer 19 is located on the gate insulating layer 18 and under the source and drain electrodes 12 and 13.
In an alternative embodiment of the present invention, referring to fig. 6, the difference between the tft shown in fig. 1 and the tft is:
the channel layer 61 is located between a gate insulating layer 62 and a glass substrate 63, a gate electrode 64 is located on the gate insulating layer 62, and the gate insulating layer 62 isolates the gate electrode 64 from the underlying channel layer 61, source electrode 65, and drain electrode 66. And the channel layer 61 covers the glass substrate 63, the source electrode 65, and the drain electrode 66.
In an alternative embodiment of the present invention, referring to fig. 7, compared with the tft shown in fig. 1, the difference is that:
the channel layer 71 covers the source electrode 72 and the drain electrode 73.
In an alternative embodiment of the present invention, referring to fig. 8, compared with the tft shown in fig. 6, the difference is that:
the source electrode 81 and the drain electrode 82 are located on the channel layer 83;
the gate insulating layer 84 covers the source and drain electrodes 81 and 82.
Therefore, the structure of the thin film transistor in the embodiment of the invention has various choices, and can be selected according to needs. With any structure of the thin film transistor, no obstacle is formed on feasibility of the pixel unit and the terahertz imaging system.
The following describes a method for forming a pixel unit according to an embodiment of the present invention with reference to fig. 9 to 13.
Referring to fig. 9, a method for forming a pixel unit according to an embodiment of the present invention includes the following steps:
step 91: forming a thin film transistor, wherein the thin film transistor comprises a glass substrate, a grid electrode positioned on the glass substrate, and a source electrode and a drain electrode positioned on two sides of the grid electrode;
and step 92: forming a dielectric layer on the thin film transistor;
step 93: forming a first conductive plug and a second conductive plug in the dielectric layer, wherein the first conductive plug and the second conductive plug are respectively and electrically connected with two poles of the grid, the source and the drain;
step 94: forming a metamaterial layer on the dielectric layer, wherein the metamaterial layer is electrically connected with the first conductive plug and the second conductive plug;
step 95: and a liquid crystal layer is formed on one adjacent side of the thin film transistor, the liquid crystal layer and the thin film transistor share the glass substrate, the liquid crystal layer comprises a bottom pixel electrode and liquid crystal positioned on the bottom pixel electrode, and an output electrode in the source electrode and the drain electrode is electrically connected with the bottom pixel electrode.
In embodiments of the present invention, steps 93 and 94 may be two separate steps, with the metamaterial layer being formed after the first and second conductive plugs are formed in the dielectric layer based on step 93.
In an alternative embodiment of the present invention, steps 93 and 94 may be the same fabrication process, and the first and second conductive plugs and the metamaterial layer may be formed in the same fabrication process.
The timing between steps 94 and 95 is not limited to the embodiment shown in fig. 9, and step 95 may be performed first to form a liquid crystal layer and then a metamaterial layer on the thin film transistor.
In the embodiment of the present invention, referring to fig. 10, when forming the thin film transistor 10, the gate 101 is formed first. Specifically, the gate electrode 101 is formed using deposition and patterning processes.
In addition, after the gate electrode 101 is formed, a gate insulating layer 104 is deposited, and the gate insulating layer 104 plays a role of insulating isolation. Specifically, the gate insulating layer 104 covers the gate electrode 101 and the glass substrate 100 in the form of a thin film.
The gate insulating layer 104 may be formed by using alumina deposited by rf magnetron sputtering or silicon dioxide deposited by plasma enhanced chemical vapor deposition, and the forming method and material are not limited by the embodiments of the present invention, and are determined according to the requirements and experimental conditions.
A channel layer 105 is formed on the gate insulating layer 104. For the thin film transistor 10, the channel layer 105 covers the gate insulating layer 104 in the form of a thin film. The material of the channel layer 105 includes, but is not limited to, hydrogenated amorphous silicon (a-Si: H), polysilicon (Poly Si), amorphous oxide, organic, and the like.
Then, a source electrode 102 and a drain electrode 103 are formed on the channel layer 105, and the specific means includes plating, photolithography, etching, and the like.
Considering that the glass substrate 100 cannot withstand high annealing temperatures, the deposition process for the layers in the thin film transistor is performed at a relatively low temperature. Such as chemical vapor deposition, physical vapor deposition (mostly using sputtering techniques) are commonly used deposition processes.
Referring to fig. 11, a dielectric layer 110 is formed on the thin film transistor 10, and the dielectric layer 110 covers the thin film transistor 10 to achieve an insulation and isolation effect.
Referring to fig. 12, a first conductive plug 111 and a second conductive plug 112 are formed in the dielectric layer 110, and the first conductive plug 111 and the second conductive plug 112 are electrically connected to the gate 101 and the source 102, respectively.
The forming process of the first conductive plug 111 and the second conductive plug 112 includes performing patterning processing on the dielectric layer 110, forming a through hole in the dielectric layer 110, exposing the upper surfaces of the gate 101 and the source 102 through the through hole, and filling a conductive material in the through hole to form the first conductive plug 111 and the second conductive plug 112. The conductive material may be metal or other conductive non-metallic material.
In an alternative embodiment of the present invention, the first conductive plug and the second conductive plug are electrically connected to the gate and the drain, respectively, or the first conductive plug and the second conductive plug are electrically connected to the source and the drain, respectively. Therefore, the first conductive plug and the second conductive plug may be electrically connected to any two poles of the gate electrode, the source electrode, and the drain electrode, respectively.
Referring to fig. 13, a metamaterial layer 120 is formed on the dielectric layer 110, and the metamaterial layer 120 is electrically connected to the first conductive plug 111 and the second conductive plug 112.
Forming a metamaterial layer on the dielectric layer 110 may specifically include:
depositing a metamaterial on the dielectric layer;
and carrying out patterning treatment on the metamaterial to obtain the metamaterial layer.
Based on the difference of the meta-material, the corresponding deposition process can be selected, which is not limited.
The graphic processing means includes photoetching and etching.
In an alternative embodiment of the present invention, the metamaterial layer and the conductive plug may be formed in the same manufacturing process. Specifically, the following steps may be employed:
referring to fig. 14, a first via hole 14a and a second via hole 14b are formed in the dielectric layer 140, the first via hole 14a and the second via hole 14b exposing the gate 141 and the source 142, respectively;
referring to fig. 15, depositing a meta-material 143 on the dielectric layer 140, the meta-material 143 being higher than the upper surface of the dielectric layer 140 and filling the first via 14a and the second via 14b (refer to fig. 14);
referring to fig. 16, the meta-material 163 (see fig. 15) is planarized, the meta-material remaining above the dielectric layer 140 after the planarization process serves as the meta-material layer 144, and the meta-material remaining in the first and second vias serves as the first and second conductive plugs 145 and 146.
The planarization technique includes etching back, glass reflow, spin-on coating, or Chemical Mechanical Polishing (CMP), so that the top surface of the metamaterial layer 144 is a flat surface.
In the embodiment of the invention, the metamaterial layer is manufactured in the metal interconnection layer of the TFT subsequent process, so that the specific response characteristic to the terahertz wave can be realized.
For the pixel units shown in fig. 5-8 of the present invention, reference may be made to the flowchart shown in fig. 9, and adaptive adjustment may be performed, which is not described herein again.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (9)
1. A pixel cell, comprising:
the thin film transistor is positioned on the glass substrate, and the liquid crystal layer is positioned on one side adjacent to the thin film transistor;
wherein the thin film transistor includes:
the grid electrode is positioned on the glass substrate, and the source electrode and the drain electrode are positioned on two sides of the grid electrode;
a dielectric layer located on the thin film transistor, wherein a first conductive plug and a second conductive plug are formed in the dielectric layer;
the metamaterial layer is positioned on the dielectric layer;
any two poles of the grid electrode, the source electrode and the drain electrode are electrically connected with the metamaterial layer through the first conductive plug and the second conductive plug respectively;
the liquid crystal layer comprises a bottom pixel electrode and liquid crystal positioned on the bottom pixel electrode, and an output electrode in the source electrode and the drain electrode is electrically connected with the bottom pixel electrode.
2. The pixel cell of claim 1, wherein the metamaterial layer is at least one of linear, cross-shaped, fish-net-shaped, rectangular-shaped, open-loop, H-shaped, and nested multi-layer open-loop.
3. The pixel cell of claim 1, wherein the metamaterial layer is copper, aluminum, gold, graphene, silicon dioxide, or silicon nitride.
4. The pixel cell of claim 1, wherein the thin film transistor further comprises:
a gate insulating layer and a channel layer formed in a vertical direction;
the grid electrode is isolated from the source electrode and the drain electrode along the vertical direction through the grid insulating layer;
the channel layer has at least a channel region between the source and drain electrodes, the channel layer being isolated from the gate electrode by the gate insulating layer in the vertical direction.
5. A display comprising the pixel unit according to any one of claims 1 to 4 arranged in an array.
6. A terahertz imaging system, comprising:
a terahertz radiation source module;
the display of claim 5;
an optical focuser positioned on an optical path of the terahertz radiation source module between the terahertz radiation source module and the metamaterial layer;
the optical focuser is arranged to:
and carrying out optical focusing on the terahertz light waves emitted by the terahertz radiation source module, and enabling focusing signals to be incident to the metamaterial layer.
7. A method for forming a pixel unit is characterized by comprising the following steps:
forming a thin film transistor, wherein the thin film transistor comprises a glass substrate, a grid electrode positioned on the glass substrate, and a source electrode and a drain electrode positioned on two sides of the grid electrode;
forming a dielectric layer on the thin film transistor;
forming a first conductive plug and a second conductive plug in the dielectric layer, wherein the first conductive plug and the second conductive plug are respectively and electrically connected with any two poles of the grid, the source and the drain;
forming a metamaterial layer on the dielectric layer, wherein the metamaterial layer is electrically connected with the first conductive plug and the second conductive plug;
and a liquid crystal layer is formed on one adjacent side of the thin film transistor, the liquid crystal layer and the thin film transistor share the glass substrate, the liquid crystal layer comprises a bottom pixel electrode and liquid crystal positioned on the bottom pixel electrode, and an output electrode in the source electrode and the drain electrode is electrically connected with the bottom pixel electrode.
8. The method of claim 7, wherein forming a metamaterial layer over the dielectric layer comprises:
depositing a metamaterial on the dielectric layer;
and carrying out patterning treatment on the metamaterial to obtain the metamaterial layer.
9. The method of claim 7, wherein forming the first and second conductive plugs in the dielectric layer and forming the metamaterial layer on the dielectric layer are performed in a same fabrication process, comprising:
forming a first through hole and a second through hole in the dielectric layer, wherein the first through hole and the second through hole respectively expose any two poles of the grid, the source and the drain;
depositing a metamaterial on the dielectric layer, wherein the metamaterial is higher than the upper surface of the dielectric layer and fills the first through hole and the second through hole;
and carrying out planarization treatment on the metamaterial, wherein the metamaterial which is higher than the dielectric layer is left after treatment and is used as the metamaterial layer, and the metamaterial which is left in the first through hole and the second through hole is used as the first conductive plug and the second conductive plug.
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