CN113540155B

CN113540155B - Display screen and electronic equipment

Info

Publication number: CN113540155B
Application number: CN202010280694.4A
Authority: CN
Inventors: 蔡奇; 黄宗兴; 彭旭
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2020-04-10
Filing date: 2020-04-10
Publication date: 2023-09-05
Anticipated expiration: 2040-04-10
Also published as: CN113540155A

Abstract

The embodiment of the application provides a display screen and electronic equipment, and relates to the technical field of display. For shrinking Liu Haiou the display screen and improving the screen ratio of the electronic device. The display screen is provided with a display area and comprises a photosensitive unit and a plurality of sub-pixels, wherein the photosensitive unit and the sub-pixels are arranged in the display area. The sub-pixel is provided with an effective display area, and the photosensitive unit comprises at least one photosensitive control circuit. In addition, the photosensitive control circuit comprises a switching transistor and a photosensitive element coupled with the switching transistor, and the photosensitive control circuit is positioned between the effective display areas of two adjacent sub-pixels. Based on this, the photosensor is used to photoelectrically convert light incident on the display screen and generate an electrical signal. The photosensitive control circuit is used for outputting the electric signal when the switching transistor is in a conducting state.

Description

Display screen and electronic equipment

Technical Field

The application relates to the technical field of display, in particular to a display screen and electronic equipment.

Background

With the development of display technology, display applications are becoming more and more widespread. However, in the application process of the display screen, the intensity of the light can bring a certain difficulty to the application. For example, when used in a dark environment, the brightness of the display screen is too strong to cause fatigue, and when used outdoors where sunlight is relatively abundant, the brightness of the display screen is too low to see the screen clearly. Therefore, it is required that the brightness of the display screen may be changed as the intensity of the light is changed. Therefore, it is necessary to provide a photosensitive unit in the display screen. While currently the photosensitive element is typically disposed on the display Liu Haiou, the screen duty cycle of the electronic device is reduced.

Disclosure of Invention

The embodiment of the application provides a display screen and electronic equipment, which are used for reducing Liu Haiou of the display screen and improving the screen occupation ratio of the electronic equipment.

In order to achieve the above purpose, the application adopts the following technical scheme:

in a first aspect of an embodiment of the present application, a display screen is provided, the display screen having a display area, the display screen including a photosensitive unit and a plurality of subpixels disposed in the display area. The sub-pixel is provided with an effective display area, and the photosensitive unit comprises at least one photosensitive control circuit. In addition, the photosensitive control circuit comprises a switching transistor and a photosensitive element coupled with the switching transistor, and the photosensitive control circuit is positioned between the effective display areas of two adjacent sub-pixels. Based on this, the photosensor is used to photoelectrically convert light incident on the display screen and generate an electrical signal. The photosensitive control circuit is used for outputting the electric signal when the switching transistor is in a conducting state. Therefore, the brightness of the display screen is adjusted according to the acquired electric signals, and the function of adjusting the brightness of the equipment according to the brightness of light rays is realized. Meanwhile, compared with the mode of arranging the light sensor in Liu Haiou, as each photosensitive control circuit in the photosensitive unit is arranged in the effective display area of the sub-pixel, the area of the area for laying out the sub-pixel in the display screen can be increased, thereby Liu Haiou of the display screen can be reduced or removed, and the screen occupation ratio of the electronic equipment is improved.

Optionally, the display screen further includes a first substrate, a pixel defining layer, a plurality of light emitting devices, and a second substrate. The pixel defining layer is disposed on the first substrate and includes a plurality of pixel banks. In addition, a plurality of pixel partition walls are provided to intersect in a horizontal and vertical direction to define a plurality of openings, and one light emitting device is located in one opening. And the second substrate is arranged on one side of the light emitting device far away from the first substrate. Based on the above, the vertical projection of the photosensitive control circuit on the first substrate is positioned in the range of the vertical projection of the pixel separation wall on the first substrate, so that the interference of the photosensitive control circuit on the pixel light path can be avoided.

Optionally, the photosensitive control circuit is disposed on a surface of the first substrate close to the light emitting device, and based on this, the photosensitive control circuit can be made by using a mask process, which is convenient for production, and simplifies station change and equipment change in the production process. And meanwhile, the vertical projection of the photosensitive control circuit on the first substrate is conveniently positioned in the range of the vertical projection of the pixel separation wall on the first substrate, so that the interference of the photosensitive control circuit on the pixel light path is avoided.

Optionally, the photosensitive control circuit is disposed on a surface of the pixel defining layer away from the first substrate, so that vertical projection of the photosensitive control circuit on the first substrate is conveniently located in a range of vertical projection of the pixel partition wall on the first substrate, and interference of the photosensitive control circuit on the pixel light path is avoided.

Optionally, the display screen further includes a first substrate, a second substrate, a liquid crystal layer, and a black matrix, wherein the liquid crystal layer is disposed between the first substrate and the second substrate. The black matrix is located on a side surface of the second substrate close to the first substrate. Based on the above, the vertical projection of the photosensitive control circuit on the second substrate is positioned in the range of the vertical projection of the black matrix on the second substrate, so that the interference of the photosensitive control circuit on the pixel light path can be avoided.

Optionally, the photosensitive control circuit is disposed on a surface of the second substrate far away from the first substrate, so that the photosensitive control circuit can be made by using a mask process, which is convenient for production, and simplifies station change and equipment change in the production process. Meanwhile, the photosensitive control circuit can be conveniently located between the effective display areas of two adjacent sub-pixels, so that the interference of the photosensitive control circuit on the pixel light path is avoided.

Optionally, the display screen further includes a touch layer. The touch control layer is arranged on one side of the second substrate far away from the first substrate, based on the touch control layer, the photosensitive control circuit is arranged on the surface of one side of the touch control layer far away from the first substrate, and the photosensitive control circuit can be conveniently positioned between the effective display areas of two adjacent sub-pixels, so that the interference of the photosensitive control circuit on the pixel light path is avoided.

Optionally, the display screen further comprises an upper polarizer. The upper polaroid is arranged on one side of the second substrate far away from the first substrate, and based on the upper polaroid, the photosensitive control circuit is arranged on the surface of one side of the upper polaroid far away from the first substrate, so that the photosensitive control circuit can be conveniently positioned between the effective display areas of two adjacent sub-pixels, and the interference of the photosensitive control circuit on the pixel light path is avoided.

Optionally, the display screen further comprises a cover plate. The cover plate is arranged on one side, far away from the first substrate, of the second substrate, based on the photosensitive control circuit, the photosensitive control circuit is arranged on the surface, far away from the first substrate, of the cover plate, and can be conveniently located between the effective display areas of two adjacent sub-pixels, so that interference of the photosensitive control circuit on a pixel light path is avoided.

Optionally, the display screen further includes a gate signal line and a read signal line crossing in the horizontal and vertical directions. The gate of the phototransistor is coupled to the first pole of the switching transistor, the first pole of the phototransistor is coupled to the read signal line, and the second pole of the phototransistor is coupled to the first voltage terminal. In addition, the gate of the switching transistor is coupled to the gate signal line, and the second pole of the switching transistor is coupled to the second voltage terminal.

Based on the above, when the gate of the switching transistor is loaded with high voltage, the switching transistor is turned on, at this time, the gate of the phototransistor is loaded with high voltage, and the phototransistor is turned on, so that light incident on the display screen is photoelectrically converted, and an electric signal is generated, and the photosensitive control circuit outputs the electric signal when the switching transistor is in a turned-on state, so that brightness of the display screen can be adjusted according to the read electric signal.

Optionally, the display screen further includes a gate signal line and a read signal line crossing in the horizontal and vertical directions. Wherein the photosensitive element comprises a photodiode or a photoresistor. The first terminal of the photosensitive element is coupled to the first pole of the switching transistor, and the second terminal of the photosensitive element is coupled to the read signal line. In addition, the gate of the switching transistor is coupled to the gate signal line, and the second pole of the switching transistor is coupled to the first voltage terminal.

Based on the above, when the grid electrode of the switching transistor is loaded with high voltage, the switching transistor is turned on, so that light incident to the display screen is subjected to photoelectric conversion, an electric signal is generated, and when the switching transistor Tc is in a turned-on state, the photosensitive control circuit outputs the electric signal, so that the brightness of the display screen can be adjusted according to the read electric signal.

Optionally, the photosensitive control circuit further comprises a resistor. The first end of the resistor is coupled to the read signal line, and the second end of the resistor is coupled to the third voltage terminal. The voltage of the first voltage end is larger than that of the third voltage end. Therefore, an electric field can be formed between the first voltage end and the third voltage end, under the action of the electric field, the phototriode performs photoelectric conversion on light rays incident to the display screen, and the impedance change condition of the phototriode is obtained through testing the voltages at the two ends of the resistor. And transmitting the impedance change condition to a reading signal line, and adjusting the brightness of the display screen according to the acquired impedance change condition.

Optionally, the display screen further comprises a filter layer. The filter layer is arranged on one side of the light incident surface of the photosensitive element and covers the light incident surface of the photosensitive element. The filter layer is used for filtering light rays incident to the display screen and comprises a silicon oxide layer and a titanium oxide layer which are laminated. Based on this, the non-response band of the photosensitive element can be filtered out using the filter layer by adjusting the number of layers and refractive index of the silicon oxide layer and the titanium oxide layer in the filter layer.

Optionally, the display screen further comprises a light blocking structure. The light blocking structure is arranged on one side of the light incident surface of the photosensitive element and is arranged around the circumference of the photosensitive element. Therefore, light rays emitted by the display screen can be shielded, and interference of the light rays to the acquisition result of the photosensitive control circuit is avoided.

Optionally, the light incident surface of the photosensitive element is circular. In addition, the ratio of the radius R of the light incident surface of the photosensitive element to the height H of the light blocking structure is R/H=tan theta, wherein the angle theta is an included angle between incident light and the normal line of the light incident surface of the photosensitive element. The angle theta is in the range of 5 DEG to 30 deg. Based on the method, the incidence range of incident light is reduced, and non-detection light rays are prevented from being injected, so that the detection result is more accurate.

Optionally, the switching transistor is a top gate transistor, and the display screen further includes a light shielding layer. The shading layer is positioned on one side of the grid electrode of the switch transistor far away from the active layer of the switch transistor, and covers the grid electrode of the switch transistor. Thereby avoiding the damage of external light to the active layer of the switch transistor.

In a second aspect of the embodiments of the present application, an electronic device is provided, where the electronic device includes any one of the display screens described above, and the electronic device has the same technical effects as the display screen provided in the foregoing embodiments, which are not described herein again.

Drawings

Fig. 1a is a schematic structural diagram of an electronic device according to an embodiment of the present application;

fig. 1b is a schematic structural diagram of a display screen according to an embodiment of the present application;

FIG. 1c is a schematic diagram of another display screen according to an embodiment of the present application;

FIG. 1d is a schematic diagram of another display screen according to an embodiment of the present application;

fig. 2a is a schematic structural diagram of another electronic device according to an embodiment of the present application;

FIG. 2b is a schematic diagram illustrating a configuration position of a photosensitive unit according to an embodiment of the present application;

FIG. 3a is a circuit diagram of a photosensitive control circuit according to an embodiment of the present application;

FIG. 3b is a circuit diagram of another photosensitive control circuit according to an embodiment of the present application;

FIG. 3c is a schematic diagram of a partial structure of a display screen with a photosensitive control circuit according to an embodiment of the present application;

FIG. 3d is a schematic view of the partial structure of the W area in FIG. 3 c;

FIG. 3e is a schematic view of the light blocking structure of FIG. 3 d;

fig. 4a is a schematic structural diagram of another electronic device according to an embodiment of the present application;

fig. 4b is a schematic structural diagram of another electronic device according to an embodiment of the present application;

fig. 4c is a schematic structural diagram of an electronic device according to the related art;

FIG. 4d is a cross-sectional view taken along the dashed line A-A in FIG. 4 c;

fig. 4e is a schematic cross-sectional structure of an electronic device according to an embodiment of the present application;

FIG. 5a is a schematic diagram of another partial structure of a display screen with a photosensitive control circuit according to an embodiment of the present application;

FIG. 5b is a schematic diagram of another partial structure of a display screen with a photosensitive control circuit according to an embodiment of the present application;

FIG. 5c is a schematic diagram of another partial structure of a display screen with a photosensitive control circuit according to an embodiment of the present application;

FIG. 6a is a circuit diagram of another photosensitive control circuit according to an embodiment of the present application;

FIG. 6b is a schematic diagram of another partial structure of a display screen with a photosensitive control circuit according to an embodiment of the present application;

FIG. 7 is a circuit diagram of another photosensitive control circuit according to an embodiment of the present application;

FIG. 8a is a schematic diagram of another display screen according to an embodiment of the present application;

FIG. 8b is a cross-sectional view taken along the dashed line O-O in FIG. 8 a;

FIG. 8c is a schematic diagram of another display screen according to an embodiment of the present application;

FIG. 8d is a schematic diagram of another display screen according to an embodiment of the present application;

fig. 8e is a schematic structural diagram of another display screen according to an embodiment of the present application;

Fig. 9 is a schematic structural diagram of another display screen according to an embodiment of the present application;

fig. 10a is a schematic structural diagram of another display screen according to an embodiment of the present application;

FIG. 10b is a schematic diagram of another display screen according to an embodiment of the present application;

fig. 10c is a schematic structural diagram of another display screen according to an embodiment of the present application;

fig. 10d is a schematic structural diagram of another display screen according to an embodiment of the present application.

Reference numerals:

01-an electronic device; 10-a display module; 11-a middle frame; 12-a rear shell; 13-a photosensitive unit; 101-a display screen; 202-pixel units; 130-substrate; 104-pixel circuits; 105-subpixels; 105R-red subpixels; 105G-green subpixels; 105B-blue subpixels; AA-an active display area; 106-inactive display area; 220-photosensitive pixels; RG-photoresistor; 317-silicon oxide (SiOx) layer; a 318-titanium oxide (TiOx) layer; 113-a light emitting device; 116-pixel banks; 125-a first substrate base plate; 126-a pixel defining layer; 127-a second substrate base plate; 117-anode; 118-a light emitting layer; 119-cathode; 201-a photosensitive control circuit; s-source; d-drain electrode; g-grid; 314-an active layer of a switching transistor; GL-grid lines; a Tc-switching transistor; BG-phototransistors; RL-read signal line; 311-a buffer layer; 312-gate insulation layer; 302-a first gate; 313-an intermediate layer; 320-a first groove; 321-a second groove; 303-a light shielding layer; 322-third groove; 323-fourth grooves; 324-fifth groove; 304-a light blocking structure; 305-a filter layer; 310-passivation layer; 308-a phototransistor active layer; 307-a second gate; h-the height of the light blocking structure; r-phototransistor light entrance radius; 504-a transistor; 120-opening; VD-photodiodes; 501-a touch layer; 502-applying a polarizer; 503-cover plate; 602-black matrix; 603-liquid crystal molecules; 601-a liquid crystal layer; 604-a color film substrate; 100-Liu Haiou; 200-light sensor.

Detailed Description

The following description of the technical solutions according to the embodiments of the present application will be given with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, but not all embodiments.

Hereinafter, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", etc. may explicitly or implicitly include one or more such feature. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.

Furthermore, in the present application, directional terms "upper", "lower", etc. may be defined as including, but not limited to, the orientation in which the components are schematically disposed with respect to each other in the drawings, and it should be understood that these directional terms may be relative concepts, which are used for the description and clarity with respect thereto, and which may be correspondingly varied depending upon the orientation in which the components are disposed with respect to the drawings in the drawings.

In the present application, unless explicitly specified and limited otherwise, the term "connected" is to be construed broadly, and for example, "connected" may be either fixedly connected, detachably connected, or integrally formed; can be directly connected or indirectly connected through an intermediate medium. Furthermore, the term "coupled" may be a means of electrical connection for achieving signal transmission. "coupled" may be directly connected electrically, or indirectly connected electrically through an intermediary.

The embodiment of the application provides electronic equipment. The electronic device includes electronic products with display functions such as mobile phone (mobile phone), tablet personal computer (pad), computer, television, smart wearable products (e.g., smart watch, smart bracelet), virtual Reality (VR) terminal device, augmented reality (augmented reality AR), etc. The embodiment of the application does not limit the specific form of the electronic device.

For convenience of explanation, the electronic device 01 is taken as an example of a mobile phone as shown in fig. 1 a. In this case, the electronic device 01 mainly includes a display module 10, a middle frame 11, and a rear case 12. The middle frame 11 is located between the display module 10 and the rear case 12. The display module 10 and the rear shell 12 are respectively connected with the middle frame 11. The accommodating cavity formed between the rear case 12 and the middle frame 11 is used for accommodating electronic components such as a battery, a camera (not shown in fig. 1 a), and a printed circuit board (printed circuit board, PCB) as shown in fig. 1 a.

In addition, the display module 10 is used for displaying images, and comprises a display screen 101 as shown in fig. 1b, wherein the display screen 101 is provided with a plurality of pixel units 202. In some embodiments of the present application, the pixel arrangement may be as shown in fig. 1B, where one pixel unit 202 includes one red (R) subpixel 105R, one green (G) subpixel 105G, and one blue (B) subpixel 105B. For example, the red and green sub-pixels 105R and 105G are located in the same row along the X-direction, the blue sub-pixel 105B is located in another row, and is located in the same column as the red sub-pixel 105R along the Y-axis direction. For the pixel arrangement shown in fig. 1B, the right side of the blue subpixel 105B and the lower side of the green subpixel 105G may not be provided with subpixels. So that there is a certain gap between two adjacent green sub-pixels 105G located in the same column in the Y direction.

In fig. 1B, the red subpixel 105R and the green subpixel 105G of the same pixel unit 202 are located in the same row along the X-axis direction, and the blue subpixel 105B is located in the next row. In other embodiments of the present application, the red subpixel 105R and the blue subpixel 105B in the same pixel unit 202 may be located in the same row along the X-axis direction, while the green subpixel 105G is located in the next row, or the green subpixel 105G and the blue subpixel 105B may be located in the same row along the X-axis direction, and the red subpixel 105R is located in the next row.

In other embodiments of the present application, as shown in fig. 1c, the pixel arrangement of the display screen 101 may also be that the red sub-pixel 105R, the green sub-pixel 105G and the blue sub-pixel 105B in the same pixel unit 202 are sequentially arranged in the same row along the X-axis direction. It should be noted that the arrangement of the red, green and blue sub-pixels 105 may be determined according to the requirement, which is not limited in the present application. For example, the arrangement of the subpixels 105 of the display panel 101 may be a Pentile pixel arrangement (may also be referred to as a P arrangement) or an RGB-Delta pixel arrangement (may also be referred to as a D arrangement) in which the areas of the red subpixels, the blue subpixels, and the green subpixels are not equal to each other.

For either pixel arrangement shown in fig. 1b or 1c, either subpixel 105 has an Active Area (AA) and an inactive area 106 located around the AA. The AA region of the subpixel 105 is the region of the subpixel 105 that is actually used for displaying an image. In this case, the inactive display area 106 between the AA areas of any two adjacent subpixels 105 described above is not used to display an image.

In general, when the display screen 101 is used in a dark environment, the brightness of the display screen 101 is too strong to cause fatigue, and when the sun is relatively enough outdoors, the brightness of the display screen 101 is too low to see the screen clearly, which makes application difficult.

Based on this, the electronic device 01 provided in the embodiment of the present application further has a function of adjusting the brightness of the display screen 101 according to the light. In this case, the electronic device 01 may further comprise a light sensing unit 13 as in fig. 2 a. Wherein the light sensing unit 13 may comprise at least one light sensing pixel 220 as shown in fig. 2 b. In fig. 2b, the photosensitive unit 13 includes a plurality of photosensitive pixels 220, and the photosensitive control circuit 201 is disposed in any one of the photosensitive pixels 220.

As can be seen from the above, the area between two adjacent sub-pixel AA areas is the inactive display area 106, and the inactive display area 106 does not display an image. Therefore, in order to avoid the interference of each photosensitive control circuit 201 in the photosensitive unit 13 on the image displayed on the display screen, each photosensitive control circuit 201 in the photosensitive unit 13 may be disposed at intervals. In some embodiments of the present application, the photosensitive control circuit 201 may be located within the inactive display area 106 (e.g., the location identified in fig. 1b and 1 c) between the active display areas AA of adjacent two sub-pixels 105. Alternatively, in other embodiments of the present application, as shown in FIG. 1d, the photosensitive control circuit 201 may be located in the inactive display area 106 between two adjacent pixel units 202.

As shown in fig. 3a, each photosensitive control circuit 201 includes a switching transistor Tc and a photosensitive element (e.g., a phototransistor BG shown in fig. 3 a) coupled to the switching transistor Tc. The switching transistor Tc may be a thin film transistor (thin filmtransistor, TFT) or a MOS transistor. For convenience of explanation, the switching transistor Tc is exemplified as a TFT.

It should be noted that in the embodiment of the present application, any TFT may include a gate (g), an Active Layer (AL), and a first electrode, for example, a source(s), and a second electrode, for example, a drain (d). Alternatively, the first pole of the transistor may be the drain d and the second pole the source s. The present application is not limited thereto, and for convenience of illustration, the following description will take the first pole of the transistor as the drain d and the second pole as the source s as an example.

Further, when the switching transistor Tc is a TFT, the switching transistor Tc may be a top gate type transistor or a bottom gate type transistor, and when it is a top gate type transistor, the gate g of the switching transistor Tc is farther from the substrate with respect to the active layer AL. In this case, in order to avoid the active layer 314 of the switching transistor Tc from being damaged by external light, the display screen 101 may further include a light shielding layer, wherein the light shielding layer is located on a side of the gate g of the switching transistor Tc away from the active layer AL of the switching transistor Tc, and the light shielding layer covers the gate g of the switching transistor Tc. When it is a top gate transistor, the gate g of the switching transistor Tc is closer to the substrate than the active layer AL. The present application is not limited thereto, and for convenience of illustration, the following description will be given taking the switching transistor Tc as an example of a top gate transistor.

Based on this, in some embodiments of the present application, as shown in fig. 3a, the photosensitive element may be a phototransistor BG. The structure of the phototransistor BG is similar to the switching transistor Tc, i.e., may be a TFT or MOS transistor. When the phototransistor BG is a TFT, the phototransistor BG may be a top gate or bottom gate transistor. For convenience of explanation, the following description will be given taking the phototransistor BG as an example of top gate. In addition, the phototransistor BG and the switching transistor Tc are different in that a photodiode is connected to the active layer of the phototransistor BG. The coupling of the switching transistor Tc and the photosensor means that the gate g of the phototransistor BG is coupled to the first pole of the switching transistor Tc.

In this case, the display screen 101 may further include a gate signal line GL and a read signal line RL crossing horizontally and vertically as shown in fig. 2 b. The first pole of the phototransistor BG, for example, the drain (drain, d) of the phototransistor BG in fig. 3a is coupled to the read signal line RL, and the gate (gate, g) of the switching transistor Tc is coupled to the gate signal line GL. In addition, the second pole of the phototransistor BG is coupled to the first voltage terminal V1, and the second pole of the switching transistor Tc, such as the source(s) of the phototransistor BG in fig. 3a, is coupled to the second voltage terminal V2.

Based on this, the input signal of GL can control the on of the switching transistor Tc, and after the selected communication line GL receives the gate signal, the switching transistor Tc is turned on, and at this time, the voltage of V2 can be applied to the gate g of the phototransistor BG, so that the phototransistor BG is turned on.

Furthermore, in other embodiments of the present application, the voltages of V1 and V2 described above may be different. At this time, V1 may be larger than V2, or V1 may be smaller than V2, as long as the switching transistor Tc and the phototransistor BG can be turned on. Alternatively, in other embodiments of the present application, the voltages of V1 and V2 may be the same, as shown in FIG. 3 b. At this time, the switching transistor Tc and the first pole of the phototransistor BG may be connected to the same voltage terminal V1.

As shown in fig. 3c (a cross-sectional view taken along a broken line E-E in fig. 1b, only the portion of the display screen 101 where the photosensitive control circuit 201 is located), when light is incident on the surface of the phototransistor BG, a photoelectric conversion effect occurs in the active layer 308 of the phototransistor BG, so that the impedance of the active layer 308 of the phototransistor BG changes, and charge accumulation or dissipation is formed at both ends of the active layer 308 of the phototransistor BG (as shown in fig. 3c, positive charges are formed on the left side and negative charges are formed on the right side of the active layer 308).

In other embodiments of the present application, as shown in fig. 3a, the photosensitive control circuit 201 may further include a resistor R, wherein a first terminal C of the resistor R is coupled to the read signal line RL, a second terminal D of the resistor R is coupled to the third voltage terminal V3, and a voltage of the first voltage terminal V1 is greater than a voltage of the third voltage terminal V3. In some embodiments of the present application, the third voltage terminal V3 may be grounded.

In this way, when the selected communication line GL is turned on at a certain frequency, an electric field can be formed between the first voltage terminal V1 and the third voltage terminal V3. Under the action of the electric field, a current can be formed between the charges accumulated at the two ends of the active layer 308 of the phototransistor BG (as shown in fig. 3c, the direction of the current is that positive charges are directed to negative charges), and an electric signal is output from the RL terminal. The certain frequency can be 20Hz, or set according to the requirement, so as to meet the requirements of accuracy, power consumption and the like. In this embodiment, the impedance change condition of the phototransistor BG can be obtained by testing the voltages at the two ends of the resistor R.

After that, the CPU can adjust the brightness of the display screen 101 according to the acquired impedance change condition. For example, the duty cycle in pulse width modulation (pulse widthmodulation, PWM) is adjusted, the value of the duty cycle may be reduced when an increase in brightness is required, and the value of the duty cycle may be increased when a decrease in brightness is required. Since this is the prior art for the person skilled in the art, no further description is given here.

It should be noted that, the correspondence between the impedance and the brightness of the display screen needs to be set in advance inside the CPU. In addition, it is necessary to test the reference voltage as a reference for the post-voltage test when the electronic apparatus 01 is in the initial state. The method comprises the following steps:

in the initial state, the gate g of the switching transistor Tc is set to a 0 bias voltage, and at this time, the switching transistor Tc is turned off, and V1 and V2 are set to a positive bias voltage. Here, V1 may be set to a negative bias, or may be set according to the need, which is not limited in the present application. And V2 is used to turn on the phototransistor BG in the state where the switching transistor Tc is turned on.

Then, the gate signal line GL receives the gate signal, applies a high voltage to the gate g of the switching transistor Tc (for example, the switching transistor Tc is an N-type transistor), and turns on the switching transistor Tc, and after the switching transistor Tc is turned on, the phototransistor BG provides a high voltage to the phototransistor BG, so that the phototransistor BG is turned on, and then the voltage values at both ends of the resistor R are read out at the RL terminal as a reference voltage.

Based on the above, when the light is incident on the surface of the phototransistor BG, the light is converted into an electrical signal, however, after some of the external light enters the surface of the phototransistor BG, the phototransistor BG is not easily caused to generate photoelectric conversion. So in order to solve the above-mentioned problems. In some embodiments of the present application, as shown in FIG. 3c, the display screen 101 may further include a filter layer 305.

The filter layer 305 is disposed on one side of the light incident surface of the phototransistor BG and covers the light incident surface of the phototransistor BG, and the filter layer 305 is used for filtering light incident on the display screen 101, so as to filter out the non-response band of the phototransistor BG and improve the accuracy of light signal acquisition of the photosensitive control circuit 201. As shown in fig. 3d (an enlarged view corresponding to a portion W in fig. 3 c), the filter layer 305 may include a stacked silicon oxide (SiOx) layer 317 and a titanium oxide (TiOx) layer 318 (only one example of a stacked manner of the silicon oxide (SiOx) layer 317 and the titanium oxide (TiOx) layer 318 is shown in the drawing), and the light wavelength band that the filter layer 305 may filter is adjusted by adjusting the number of layers and the refractive index of the silicon oxide (SiOx) layer 317 and the titanium oxide (TiOx) layer 318. For example, when the above-described photosensitive element in the photosensitive control circuit 201 does not respond to the infrared band, the number of layers and refractive index of the silicon oxide (SiOx) 317 layer and the titanium oxide (TiOx) 318 layer may be adjusted so that the filter layer 305 may filter out light rays in the infrared band.

It should be noted that the number of layers, stacking mode and refractive index of SiOx and TiOx are not limited in the present application, and those skilled in the art may set the number of layers, stacking mode and refractive index of SiOx and TiOx in a manner of experiment, test, simulation, etc., so long as the non-response band can be filtered according to the requirement of the phototransistor BG on the wavelength of light.

In addition, as described above, each photosensitive control circuit 201 of the photosensitive unit 13 is located in the non-display area 106 between two adjacent AA areas, however, as described above, the AA area can display an image, and when the AA area displays an image, the light emitted from the AA area may be incident on the non-display area 106, thereby affecting the acquisition result of the photosensitive control circuit 201. In order to solve the above problem, the display screen 101 may further include a light blocking structure 304 as shown in fig. 3c, where the light blocking structure 304 is disposed on a side of the light incident surface of the phototransistor BG and is disposed around a circumference of the phototransistor BG (as shown in fig. 3 e), so that the light of the subpixel 105 is blocked from being incident on the phototransistor BG.

In some embodiments of the present application, the light incident surface of the phototransistor BG may be circular as shown in fig. 3e, and at this time, as shown in fig. 3d, the ratio of the radius R of the light incident surface of the phototransistor BG to the height H of the light blocking structure 304 is R/h=tan θ, and when the angle θ is within the range of 5 ° to 30 °, the incident range of the incident light may be narrowed, so as to avoid the incidence of non-detection light, thereby making the detection result more accurate. The angle θ is an angle between the incident light and a normal line of the incident light surface of the photosensitive element, such as the phototransistor BG. For example, in some embodiments of the present application, the angle θ may be 5 °, 10 °, 15 °, 20 °, or 30 °.

It should be noted that, taking the example that the photosensitive unit 13 includes four photosensitive control circuits 201 as shown in fig. 4a, the four photosensitive control circuits 201 may be respectively set at positions corresponding to four top corners of the display screen 101 as shown in fig. 4a, where in this case, compared with the related art as shown in fig. 4c, the manner in which Liu Haiou 100 is set in the electronic device 01 (Liu Haiou means that a groove is dug in the display area of the display screen 101 for setting other electronic components, for example, a camera, a home key, etc.), the accuracy is higher.

Alternatively, in other embodiments of the present application, the above-mentioned photosensitive unit 13 includes eight photosensitive control circuits 201 as shown in fig. 4b, and four photosensitive control circuits 201 may be respectively disposed on two sides of the display screen 101, where each photosensitive control circuit 201 in the photosensitive unit 13 may test the light intensity, adjust the brightness of the display screen 101, and detect the hand shielding position, so as to determine the operation performed by the hand. The present application does not limit the setting position of the photosensitive control circuit 201, and can be set according to the need.

As can be seen from the above description, in the embodiment of the present application, the display screen 101 may include a plurality of photosensitive control circuits 201 and a plurality of sub-pixels disposed in a display area, wherein the sub-pixels have an effective display area. The plurality of photosensitive control circuits 201 may constitute the photosensitive unit 13 for detecting ambient light. In addition, the photosensitive control circuit 201 includes a switching transistor Tc and a photosensitive element coupled to the switching transistor Tc, in which case the photosensitive control circuit 201 is located between the active display areas of the adjacent two sub-pixels. Based on this, the photosensor is configured to photoelectrically convert light incident on the display screen 101 and generate an electrical signal, and the photosensitive control circuit 201 is configured to output the electrical signal when the switching transistor Tc is in an on state. Therefore, the brightness of the display screen is adjusted according to the acquired electric signals, and the function of adjusting the brightness of the equipment according to the brightness of light rays is realized.

In addition, as shown in fig. 4c, in the related scheme, the light sensor 200 is disposed in the Liu Haiou of the electronic device 01, so as shown in fig. 4d (a cross-sectional view taken along A-A in fig. 4 c), the sub-pixel 105 cannot be disposed in the Liu Haiou 100 due to the light sensor 200 disposed below the cover plate 503 of the electronic device 01 at the position Liu Haiou, and the screen duty ratio of the screen is reduced. However, in contrast to the scheme shown in fig. 4c, the scheme of the present application is shown in fig. 4e, in which the photosensitive control circuit 201 is disposed in the inactive display area 106 between two adjacent pixel units 202. Alternatively, the photosensitive control circuit 201 is disposed in the inactive display area 106 between two adjacent sub-pixels 105, so that the area of the area under the cover plate 503 where the sub-pixels 105 can be laid out can be increased, and Liu Haiou of the display screen 101 can be reduced or removed, thereby improving the screen ratio of the electronic apparatus 01.

The process of manufacturing the photosensitive control circuit 201 in the display panel 101 will be described below by taking fig. 3b as an example.

First, as shown in fig. 5a, a buffer layer 311 is formed on a substrate 130 by chemical vapor deposition (chemical vapor deposition, CVD), and then an active layer 314 of a switching transistor Tc is formed on a side surface of the buffer layer 311 remote from the substrate 130 by physical vapor deposition (physical vapor deposition, PVD).

Then, on the substrate on which the buffer layer 311 is formed, a CVD process is used to form a gate insulating layer 312. The gate insulating layer 312 covers the active layer 314 of the switching transistor Tc. Next, the first gate 302 of Tc and the second gate 307 of BG may be simultaneously formed by a PVD process on a side surface of the gate insulating layer 312 remote from the substrate 130. Thereafter, an intermediate layer 313 is formed to cover the first gate electrode 302 and the second gate electrode 307 using a CVD process.

Thereafter, a first groove 320 and a second groove 321 are formed at both ends of the active layer 314 of the switching transistor Tc using a dry etching process, and a third groove 322 is formed at one end of the second gate electrode 307. The first groove 320 and the second groove 321 penetrate the intermediate layer 313 and the gate insulating layer 312 to the active layer 314 of the switching transistor Tc. The third recess 322 penetrates the intermediate layer 313 to the second gate 307.

Next, as shown in fig. 5b, a source electrode s and a drain electrode d are formed at both ends of the active layer 314 of the switching transistor Tc, respectively, by a PVD process.

Since the source s and the drain d of the phototransistor BG are formed of the same material as the source s and the drain d of the switching transistor Tc, the same mask can be used to manufacture the source s and the drain d of the switching transistor Tc, and the source s and the drain d of the phototransistor BG can be manufactured at the same time. Further, the drain d of the switching transistor Tc is insulated from the source s of the phototransistor BG. The source s and drain d of the phototransistor BG and the source s and drain d of the switching transistor Tc may be made of a metal material such as copper (Cu), aluminum (Al), or gold (Au).

In the embodiment of the present application, the "same layer" refers to a layer structure formed by forming a film layer for forming a specific pattern by using the same film forming process (e.g., a coating process) and then forming the film layer by using the same mask plate (mask) through a one-time patterning process. Depending on the particular pattern, the same patterning process may include multiple exposure, development, or etching processes, and the particular patterns in the formed layer structure may be continuous or discontinuous, and may be at different heights or have different thicknesses.

Thereafter, a light shielding layer 303 is formed between the source s and the drain d of the switching transistor Tc, and the light shielding layer 303 is connected to the source s and the drain d of the switching transistor Tc, wherein the material constituting the light shielding layer 303 may be a black light absorbing material (e.g., black photoresist) or a surface-plated insulating metal (e.g., aluminum (Al), titanium (Ti), etc.), which may be prepared by photolithography or metal sputtering, respectively.

Then, an active layer 308 of the phototransistor BG is formed between the source s and the drain d of the phototransistor BG such that the active layer 308 of the phototransistor BG is connected to the source s and the drain d of the phototransistor BG, respectively, wherein a material constituting the active layer 308 of the phototransistor BG may be a semiconductor material such as polysilicon, amorphous silicon, or the like, may be prepared by a CVD process, or may be an organic semiconductor material such as pentacene, isopropylsilynyl pentacene, or the like, and may be prepared by photolithography and a coating method.

Next, in order to ensure the accuracy of the light signal collected by the photosensitive control circuit 201, as shown in fig. 5c, a filter layer 305 may be formed on a surface of a side of the active layer 308 of the phototransistor BG, which is far from the first substrate 125, by a CVD process, so as to filter out the non-response band of the phototransistor BG.

Thereafter, the filter layer 305 is covered with the passivation layer 310, and a fourth groove 323 and a fifth groove 324 are formed in the passivation layer 310 by a dry etching process, wherein the fourth groove 323 and the fifth groove 324 penetrate the passivation layer 310.

Finally, the light blocking structure 304 is formed in the fourth recess 323 and the fifth recess 324, wherein the material constituting the light blocking structure 304 may be a black light absorbing material (e.g., black photoresist) or a surface-plated insulating metal (e.g., aluminum (Al), titanium (Ti), etc.), and may be prepared by photolithography or metal sputtering, respectively.

In other embodiments of the present application, the photosensitive element in the photosensitive control circuit 201 may be a photodiode VD.

As shown in fig. 6a, the first terminal a of the photodiode VD is coupled to a first pole of the switching transistor Tc, the second terminal B of the photodiode VD is coupled to the read signal line RL, and furthermore, the gate of the switching transistor Tc is coupled to the gate signal line GL, and the second pole of the switching transistor Tc is coupled to the first voltage terminal V1.

In other embodiments of the present application, the photosensitive control circuit 201 may further include a resistor R.

In this example, the working principle is basically the same as the above scheme (scheme in which the photosensitive element is a phototransistor BG), except that: in the above scheme, the first gate 302 needs to be loaded with a high voltage to turn on the switching transistor Tc, and the phototransistor BG provides a high voltage to the second gate 307 after the switching transistor Tc is turned on to turn on the phototransistor BG, that is, the phototransistor BG is turned on after the switching transistor Tc is turned on, and at this time, the phototransistor BG has a function of amplifying current. In this example, the photodiode VD is originally conductive, and the first gate 302 only plays a role of turning on the switching transistor Tc, and the photodiode VD also has no role of amplifying current, and other processes are described above, which are not repeated here.

Fig. 6b is a cross-sectional view of the display screen 101 with the photodiode VD shown in fig. 1b, taken along the broken line E-E, and is different from the above-mentioned scheme in that: the first pole of the switching transistor Tc is not connected to the second gate 307 and the first pole of the switching transistor Tc is connected to the a terminal of the photodiode VD. Other arrangement modes are the same as those described above, and will not be described in detail here.

The process for preparing the above-mentioned photosensitive control circuit 201 is different from the preparation process of the scheme when the photosensitive element is a phototransistor BG in that: in this example, the third recess 322 is not formed at one end of the second gate 307, and the first pole of the switching transistor Tc is connected to the a-terminal of the photodiode VD. Other processes are the same as those described above, and will not be repeated here.

It should be noted that, in this example, the second gate 307 does not function, but is only used to keep the same scheme as that when the photosensitive element is the phototransistor BG, so that the same mask can be used in this example and the scheme, thereby facilitating the simultaneous production of the two types of products and simplifying the process. Further, the second gate electrode 307 may be omitted in this example.

In other embodiments of the present application, the photosensitive element in the photosensitive control circuit 201 may be a photoresistor RG. As shown in fig. 7, the first terminal I of the photo resistor RG is coupled to the first pole of the switching transistor Tc, the second terminal G of the photo resistor RG is coupled to the read signal line RL, the gate of the switching transistor Tc is coupled to the gate signal line GL, and the second pole of the switching transistor Tc is coupled to the first voltage terminal V1.

In other embodiments of the present application, the photosensitive control circuit 201 may further include a resistor R. The working principle is the same as the scheme when the photosensitive element is a photodiode VD, and the description is omitted here.

In addition, the cross-sectional view of the photosensitive control circuit 201 with the above-mentioned photoresistor RG, which is taken along the broken line E-E in fig. 1b, is the same as that in fig. 6b, except that the photodiode VD in fig. 6b is replaced with the photoresistor RG, and the details are not repeated here.

The above description is given of the manufacturing process of the photosensitive control circuit 201 in the display panel 101, and the structure of the display panel 101 having the photosensitive control circuit 201 is exemplified below.

Example one

In this example, the display panel 101 is a display panel 101 capable of self-luminescence.

As shown in fig. 8a, the display screen 101 capable of self-luminescence may have a plurality of sub-pixels (sub-pixels) 105 arranged in an array. In addition, the display panel 101 includes a pixel circuit 104 and a light emitting device 113 within the subpixel 105. The pixel circuit 104 drives the light emitting device 113 to emit light so that each subpixel 105 in the display screen 101 can display at a preset gray level.

In some embodiments of the present application, the light emitting device 113 may be an organic light emitting diode (organic light emitting diode, OLED). Alternatively, in other embodiments of the present application, the light emitting device 113 may be a micro light emitting diode (light emittingdiode, LED), such as a micro LED, or a mini LED. The present application is not limited in the type of the light emitting device 113 as long as the light emitting device 113 can emit light under the drive of the pixel circuit 104. For convenience of explanation, the light emitting device 113 is exemplified as an OLED.

In this case, the display screen 101 may further include a first substrate 125, a second substrate 127 as shown in fig. 8b (a cross-sectional view taken along a broken line O-O in fig. 8 a). The light emitting device 113 is disposed between the first substrate 125 and the second substrate 127. The first substrate 125 is used for carrying the light emitting device 113, and the second substrate 127 is used for preventing water and oxygen in air from entering the light emitting device 113, thereby adversely affecting the light emitting device 113.

Based on this, in some embodiments of the present application, as shown in fig. 8b, the above-mentioned photosensitive control circuit 201 may be disposed on a side of the first substrate base 125 close to the second substrate base 127. Alternatively, in other embodiments of the present application, the photosensitive control circuit 201 may be disposed on a side of the second substrate 127 remote from the first substrate 125. The manner in which the photosensitive control circuit 201 is arranged will be exemplified in detail in the following description.

In some embodiments of the present application, the display 101 may be a flexible display. At this time, the material constituting the first substrate 125 may be a flexible material, such as an organic material. The second substrate 127 may be an encapsulation layer including a multi-layered organic thin film encapsulation layer for a flexible substrate and a multi-layered inorganic thin film encapsulation layer for blocking water and oxygen. The organic thin film encapsulation layer and the inorganic thin film encapsulation layer are disposed to intersect, and one thin film of the encapsulation layer near the air and near the light emitting device 113 is the inorganic thin film encapsulation layer. Alternatively, in other embodiments of the present application, when the display 101 is a hard display, the materials constituting the first substrate 125 and the second substrate 127 may be hard transparent materials. For example, glass, sapphire, hard resin materials, and the like. In this case, the second substrate 127 may be a package cover.

In addition, the display screen 101 may further include a pixel defining layer (pixel definitionlayer, PDL) 126 disposed on the first substrate 125 as shown in fig. 8 c. The pixel defining layer 126 may include a plurality of pixel banks 116, where the pixel banks 116 are disposed to intersect each other in a transverse direction to form a plurality of openings 120 (the pixel banks 116 are disposed to intersect each other in a transverse direction as seen in fig. 5 a). One of the plurality of light emitting devices 113 of the display screen 101 may be disposed in one of the plurality of openings 120, and the light emitting device 113 may be disposed in one of the plurality of openings 120.

The light emitting device 113 is located in an Active Area (AA) of the sub-pixel 105. The light emitting device 113 includes an anode 117, a light emitting layer 118, and a cathode 119 in this order from a side of the first substrate 125. In this case, after the cathode 119 and the anode 117 are energized, the light emitting layer 118 emits light by an electric field formed by the cathode 119 and the anode 117. The pixel partition wall 116 is used to separate adjacent sub-pixels 105, and defines a region of the sub-pixels 105. In addition, the material constituting the pixel partition wall 116 may be silicon oxide (SiOx), silicon nitride (SiNx), or the like, and the pixel partition wall 116 may transmit light.

It should be noted that, as can be seen from fig. 8c, the pixel circuit 104 is provided with the pixel partition wall 116 on a side far from the first substrate 125, that is, the pixel partition wall 116 covers the surface of the pixel circuit 104, and for convenience of illustration, the surface of the pixel circuit 104 is not shown with the pixel partition wall 116 in fig. 8 a.

In this case, in order to avoid the interference of the light path of the pixel by the light sensing control circuit 201, the light sensing control circuit 201 may be located between the effective display areas of the adjacent two sub-pixels 105, and as described above, the effective display areas are the positions corresponding to the light emitting devices 113. In order for the photosensitive control circuit 201 to be located between the effective display areas of two adjacent sub-pixels 105, the vertical projection of the photosensitive control circuit 201 on the first substrate 125 needs to be located within the range of the vertical projection of the pixel dividing wall 116 on the first substrate 125.

In some embodiments of the present application, in order to locate the photosensitive control circuit 201 on the side of the first substrate 125 near the second substrate 127, as shown in fig. 8d, the switching transistor Tc and the photosensitive element in the photosensitive control circuit 201 may be fabricated directly on the surface of the side of the first substrate 125 near the second substrate 127. The vertical projection of the photosensitive control circuit 201 on the first substrate 125 is within the range of the vertical projection of the pixel partition wall 116 on the first substrate 125, and the specific arrangement is the same as that described above, and the detailed description is omitted here.

The switching transistor Tc in the photosensitive control circuit 201 and the transistor 504 in the pixel circuit 104 may or may not be shared (not shared scheme is shown in the figure), and may be set according to the requirements, and the application is not limited thereto. When the switching transistor Tc in the photosensitive control circuit 201 and the transistor 504 in the pixel circuit 104 are common, both the pixel and the photosensitive control circuit 201 can be controlled by the pixel circuit 104. When the switching transistor is not shared, the frequency of switching on and off of the switching transistor Tc can be set according to the frequency of data acquisition required, so that the purpose of reducing power consumption is achieved.

It should be noted that, the above description is given taking the photosensitive element in the photosensitive control circuit 201 as the photo transistor BG as an example, in this example, the photosensitive element may also be a photo diode VD or a photo resistor, and in the above cross-sectional view of the display screen 101, only the photo transistor BG in fig. 8d is replaced by the photo diode VD or the photo resistor, which is specifically set as described above, and will not be repeated here.

In other embodiments of the present application, in order to dispose the photosensitive control circuit 201 on the side of the second substrate 127 away from the first substrate 125, as shown in fig. 8e, the switching transistor Tc and the photosensitive element in the photosensitive control circuit 201 may be fabricated directly on the surface of the side of the second substrate 127 away from the first substrate 125. In order to avoid the interference of the photosensitive control circuit 201 to the pixel light path, the vertical projection of the photosensitive control circuit 201 on the first substrate 125 needs to be within the range of the vertical projection of the pixel partition wall 116 on the first substrate 125, so that the photosensitive control circuit 201 is located between the effective display areas of the adjacent two sub-pixels 105.

In this embodiment, the photosensitive element may also be configured as a phototransistor BG, a photodiode VD or a photoresistor (in fig. 8e, the photosensitive element is taken as an example of the phototransistor BG), and the configuration of the photosensitive control circuit 201 is similar to that of the above-mentioned configuration in which the photosensitive control circuit 201 is disposed on a side surface of the first substrate 125, which is close to the light emitting device 113, but the first substrate 125 is replaced by the second substrate 127.

In other embodiments of the present application, the photosensitive control circuit 201 may be disposed on a surface of the pixel defining layer 126 away from the first substrate 125. In order to avoid the interference of the photosensitive control circuit 201 to the pixel light path, the vertical projection of the photosensitive control circuit 201 on the first substrate 125 needs to be within the range of the vertical projection of the pixel partition wall 116 on the first substrate 125, so that the photosensitive control circuit 201 is located between the effective display areas of the adjacent two sub-pixels 105.

In this embodiment, the photosensitive element may also be configured as a phototransistor BG, a photodiode VD, or a photoresistor, and the configuration of the photosensitive control circuit 201 is similar to that of the above configuration in which the photosensitive control circuit 201 is disposed on a side surface of the first substrate 125 close to the light emitting device 113, except that the first substrate 125 is replaced with the pixel defining layer 126, which is otherwise the same, and detailed configuration is not repeated here.

In other embodiments of the present application, as shown in fig. 9, the display screen 101 further includes a touch layer 501, where the touch layer 501 is disposed on a side of the second substrate 127 away from the first substrate 125, and in this case, the photosensitive control circuit 201 may be disposed on a surface of a side of the touch layer 128 away from the first substrate 125. In order to avoid the interference of the photosensitive control circuit 201 to the pixel light path, the vertical projection of the photosensitive control circuit 201 on the first substrate 125 needs to be within the range of the vertical projection of the pixel partition wall 116 on the first substrate 125, so that the photosensitive control circuit 201 is located between the effective display areas of the adjacent two sub-pixels 105.

In this embodiment, the photosensitive element may also be configured as a phototransistor BG, a photodiode VD, or a photoresistor, and the configuration of the photosensitive control circuit 201 is similar to that of the above configuration in which the photosensitive control circuit 201 is disposed on a side surface of the first substrate 125, which is close to the light emitting device 113, but the first substrate 125 is replaced by the touch layer 501.

In other embodiments of the present application, as shown in fig. 9, the display screen 101 may further include an upper polarizer 502, where the upper polarizer 502 is disposed on a side of the second substrate 127 away from the first substrate 125, and in this case, the photosensitive control circuit 201 may be disposed on a surface of the side of the upper polarizer 502 away from the first substrate 125. In order to avoid the interference of the photosensitive control circuit 201 to the pixel light path, the vertical projection of the photosensitive control circuit 201 on the first substrate 125 needs to be within the range of the vertical projection of the pixel partition wall 116 on the first substrate 125, so that the photosensitive control circuit 201 is located between the effective display areas of the adjacent two sub-pixels 105.

In this embodiment, the photosensitive element may also be configured as a phototransistor BG, a photodiode VD, or a photoresistor, and the configuration of the photosensitive control circuit 201 is similar to that of the above configuration in which the photosensitive control circuit 201 is disposed on a side surface of the first substrate 125, which is close to the light emitting device 113, but the first substrate 125 is replaced by the upper polarizer 502.

In other embodiments of the present application, as shown in fig. 9, the display screen 101 further includes a cover plate 503, where the cover plate 503 is disposed on a side of the second substrate 127 away from the first substrate 125, and in this case, the photosensitive control circuit 201 may be disposed on a surface of the side of the cover plate 503 away from the first substrate 125. In order to avoid the interference of the photosensitive control circuit 201 to the pixel light path, the vertical projection of the photosensitive control circuit 201 on the first substrate 125 needs to be within the range of the vertical projection of the pixel partition wall 116 on the first substrate 125, so that the photosensitive control circuit 201 is located between the effective display areas of the adjacent two sub-pixels 105.

In this embodiment, the photosensitive element may also be configured as a phototransistor BG, a photodiode VD, or a photoresistor, and the configuration of the photosensitive control circuit 201 is similar to that of the above configuration in which the photosensitive control circuit 201 is disposed on a side surface of the first substrate 125, which is close to the light emitting device 113, but the first substrate 125 is replaced by the cover plate 503.

Note that, since the first substrate 125 and the second substrate 127 are the same as the photosensitive control circuit 201, they are manufactured by the mask process. Therefore, when the photosensitive control circuit 201 is disposed on a side surface of the second substrate 127 away from the first substrate 125 or a side surface of the second substrate 127 away from the first substrate 125, the process production can be facilitated, and the station change and the equipment change in the production process can be simplified. Therefore, it is preferable to provide the photosensitive control circuit 201.

Example two

In this example, the display screen 101 is a liquid crystal display screen (liquid crystal display, LCD) 101. Since the liquid crystal display cannot emit light, a backlight unit (BLU) is required to provide a light source to the liquid crystal display 101 so that each sub-pixel (sub-pixel) 105 of the liquid crystal display 101 as shown in fig. 10a can emit light, thereby realizing image display.

The LCD101 may include a first substrate 125, a Color Filter (CF) substrate 604, a liquid crystal layer 601, a second substrate 127, and a touch layer 501, an upper polarizer 502, and a cover plate 503 sequentially far from the second substrate 127, as shown in fig. 10b (a cross-sectional view taken along a broken line F-F in fig. 10 a). On the first substrate 125, a pixel (pixel) circuit (not shown in the figure) is provided within each subpixel 105. The pixel circuit can be used for controlling the deflection angle of the liquid crystal molecules 603 in the liquid crystal layer 601, which corresponds to the position of the sub-pixel 105 where the pixel circuit is located, so that the amount of light provided by the BLU passing through the sub-pixel 105 can be controlled, and the aim of controlling the sub-pixel 105 to display gray scale is achieved.

In order to avoid interference between different effective display areas AA, a black matrix 602 is disposed between different effective display areas AA, wherein an area between the black matrices 602 is an effective display area. Further, a liquid crystal cell (cell) for accommodating the liquid crystal layer 601 is formed between the first substrate 125 and the second substrate 127. The second substrate 127 is used to prevent water and oxygen in the air from entering the liquid crystal layer 601 and damaging the liquid crystal molecules 603. The materials constituting the first substrate 125 and the second substrate 127 may be both hard transparent materials. For example, glass, sapphire, hard resin materials, and the like. In this case, the second substrate 127 may be a package cover.

In this case, when the electronic device 01 has a function of adjusting the brightness of the display screen 101 according to light, the electronic device 01 further includes a photosensitive control circuit 201, and in order to avoid interference of the photosensitive control circuit 201 with the pixel light path, the photosensitive control circuit 201 may be located between the effective display areas of the adjacent two sub-pixels 105.

As can be seen from the above, the position between the effective display areas of two adjacent sub-pixels 105 is the position corresponding to the black matrix 602. In order for the photosensitive control circuit 201 to be located between the effective display areas of two adjacent sub-pixels 105, the vertical projection of the photosensitive control circuit 201 on the second substrate 127 needs to be within the range of the vertical projection of the black matrix 602 on the second substrate 127.

In some embodiments of the present application, as shown in fig. 10b, the photosensitive control circuit 201 may be disposed on a side of the second substrate 127 away from the first substrate 125. Specifically, as shown in fig. 10c, the switching transistor Tc and the photosensor in the above-described photosensitive control circuit 201 may be fabricated directly on the surface of the second substrate 127 on the side away from the first substrate 125.

In this example, the vertical projection of the photosensitive control circuit 201 on the second substrate 127 is within the range of the vertical projection of the black matrix 602 on the second substrate 127, and other arrangements are as described above, and will not be repeated here.

In addition, in this example, the photosensitive element may be configured as a photodiode VD or a photoresistor, and in this case, in the above-mentioned cross-sectional view of the display screen 101, only the phototransistor BG in fig. 10c is replaced by the photodiode VD or the photoresistor, and the specific configuration is the same as that described above, and will not be repeated here.

In other embodiments of the present application, as shown in fig. 10d, the display screen 101 may further include a touch layer 501, where the touch layer 501 is disposed on a side of the second substrate 127 away from the first substrate 125, and in this case, the photosensitive control circuit 201 may be disposed on a surface of the touch layer 501 on a side away from the first substrate 125. In order to avoid the interference of the light path of the pixels by the light sensing control circuit 201, the vertical projection of the light sensing control circuit 201 on the second substrate 127 needs to be within the range of the vertical projection of the black matrix 602 on the second substrate 127, so that the light sensing control circuit 201 is located between the effective display areas of the two adjacent sub-pixels 105.

In this example, the photosensitive element may also be configured as a phototransistor BG, a photodiode VD, or a photoresistor, and the configuration of the photosensitive control circuit 201 is similar to that described above, except that the second substrate 127 is replaced with the touch layer 501, and the detailed configuration is the same as that described above, and the detailed description is omitted here.

In other embodiments of the present application, as shown in fig. 10d, the display screen 101 may further include an upper polarizer 502, where the upper polarizer 502 is disposed on a side of the second substrate 127 away from the first substrate 125, and in this case, the photosensitive control circuit 201 may be disposed on a surface of the side of the upper polarizer 502 away from the first substrate 125. In order to avoid the interference of the light path of the pixels by the light sensing control circuit 201, the vertical projection of the light sensing control circuit 201 on the second substrate 127 needs to be within the range of the vertical projection of the black matrix 602 on the second substrate 127, so that the light sensing control circuit 201 is located between the effective display areas of the two adjacent sub-pixels 105.

In this embodiment, the photosensitive element may also be configured as a phototransistor BG, a photodiode VD, or a photoresistor, and the configuration of the photosensitive control circuit 201 is similar to that described above, except that the second substrate 127 is replaced with the upper polarizer 502, and the specific configuration is the same as that described above, and the detailed description is omitted here.

In other embodiments of the present application, as shown in fig. 10d, the display screen 101 may further include a cover plate 503, where the cover plate 503 is disposed on a side of the second substrate 127 away from the first substrate 125, and at this time, the photosensitive control circuit 201 may be disposed on a surface of the side of the cover plate 503 away from the first substrate 125, and in order to avoid interference of the photosensitive control circuit 201 with the pixel light path, the vertical projection of the photosensitive control circuit 201 on the second substrate 127 needs to be within the range of the vertical projection of the black matrix 602 on the second substrate 127, so that the photosensitive control circuit 201 is located between the effective display areas of the two adjacent sub-pixels 105.

In this embodiment, the photosensitive element may also be configured as a phototransistor BG, a photodiode VD, or a photoresistor, and the configuration of the photosensitive control circuit 201 is similar to that described above, except that the second substrate 127 is replaced with the cover plate 503, and the detailed configuration is the same as that described above, and the detailed description is omitted here.

It should be noted that, since the pixel circuit 104 can control the deflection angle of the liquid crystal molecules 603 in the liquid crystal layer 601, so that the amount of light passing through the sub-pixels 105 is different, the purpose of controlling the sub-pixels 105 to display gray scale is achieved, and therefore, there is a case of light-tightness under the liquid crystal layer. Therefore, for convenience of manufacture, when the display screen 101 is a liquid crystal display screen, the present application preferably places the photosensitive control circuit 201 above the liquid crystal layer 601.

The embodiment of the application also provides an electronic device, which includes any display screen as described above, and has the same technical effects as those of the display screen provided in the foregoing embodiment, and will not be described herein.

The foregoing is merely illustrative of specific embodiments of the present application, and the scope of the present application is not limited thereto, but any changes or substitutions within the technical scope of the present application should be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A display screen, wherein the display screen has a display area; the display screen comprises a photosensitive unit and a plurality of sub-pixels, wherein the photosensitive unit and the sub-pixels are arranged in the display area, and the sub-pixels are provided with an effective display area;

the photosensitive unit comprises at least one photosensitive control circuit; the photosensitive control circuit comprises a switching transistor and a photosensitive element coupled with the switching transistor; the photosensitive control circuit is positioned between the effective display areas of two adjacent sub-pixels; the photosensitive element is used for carrying out photoelectric conversion on light rays incident to the display screen and generating an electric signal; the photosensitive control circuit is used for outputting the electric signal when the switching transistor is in a conducting state;

the display screen also comprises a light blocking structure; the light blocking structure is arranged on one side of the light incident surface of the photosensitive element and is arranged around the periphery of the photosensitive element;

the light incident surface of the photosensitive element is circular; the ratio of the radius R of the light incident surface of the photosensitive element to the height H of the light blocking structure is R/H=tan theta; wherein, the angle theta is the included angle between the incident light and the normal line of the light incidence surface of the photosensitive element; the angle theta is in the range of 5-30 degrees.

2. The display screen of claim 1, further comprising:

a first substrate base plate;

a pixel defining layer disposed on the first substrate and including a plurality of pixel banks; the pixel separation walls are transversely and longitudinally crossed and enclosed into a plurality of openings;

a plurality of light emitting devices, one of said light emitting devices being located within one of said openings;

the second substrate base plate is arranged on one side, far away from the first substrate base plate, of the light-emitting device;

wherein, the vertical projection of the photosensitive control circuit on the first substrate is positioned in the range of the vertical projection of the pixel separation wall on the first substrate.

3. A display screen as recited in claim 2, wherein,

the photosensitive control circuit is arranged on one side surface of the first substrate base plate, which is close to the light emitting device.

4. The display screen of claim 2, wherein the photosensitive control circuit is disposed on a side surface of the pixel defining layer remote from the first substrate.

5. The display screen of claim 1, further comprising:

a first substrate base plate;

A second substrate base plate;

the liquid crystal layer is arranged between the first substrate base plate and the second substrate base plate;

a black matrix on a surface of the second substrate close to the first substrate;

wherein, the vertical projection of the photosensitive control circuit on the second substrate is positioned in the range of the vertical projection of the black matrix on the second substrate.

6. The display screen of claim 2 or 5, wherein the photosensitive control circuit is disposed on a side surface of the second substrate base plate remote from the first substrate base plate.

7. The display screen of claim 2 or 5, further comprising a touch layer; the touch control layer is arranged on one side of the second substrate base plate far away from the first substrate base plate; the photosensitive control circuit is arranged on one side surface of the touch control layer, which is far away from the first substrate.

8. The display screen of claim 2 or 5, further comprising an upper polarizer; the upper polaroid is arranged on one side of the second substrate far away from the first substrate; the photosensitive control circuit is arranged on one side surface of the upper polarizer, which is far away from the first substrate.

9. The display screen of claim 2 or 5, further comprising a cover plate; the cover plate is arranged on one side of the second substrate base plate far away from the first substrate base plate; the photosensitive control circuit is arranged on one side surface of the cover plate, which is far away from the first substrate.

10. The display screen according to any one of claims 1 to 9, further comprising a gate signal line and a read signal line crossing in the horizontal and vertical directions;

the photosensitive element comprises a phototransistor; the gate of the phototransistor is coupled to the first pole of the switching transistor, the first pole of the phototransistor is coupled to the read signal line, and the second pole of the phototransistor is coupled to a first voltage terminal;

the gate of the switching transistor is coupled to the gate signal line, and the second pole of the switching transistor is coupled to the second voltage terminal.

11. The display screen according to any one of claims 1 to 9, further comprising a gate signal line and a read signal line crossing in the horizontal and vertical directions;

the photosensitive element comprises a photosensitive diode or a photosensitive resistor;

a first end of the photosensitive element is coupled with a first pole of the switching transistor, and a second end of the photosensitive element is coupled with the reading signal line;

The gate of the switching transistor is coupled to the gate signal line, and the second pole of the switching transistor is coupled to the first voltage terminal.

12. The display screen of claim 10 or 11, wherein the photosensitive control circuit further comprises a resistor; the first end of the resistor is coupled with the reading signal line, and the second end of the resistor is coupled with the third voltage end;

the voltage of the first voltage end is larger than that of the third voltage end.

13. The display screen of any one of claims 1-12, further comprising a filter layer; the filter layer is arranged on one side of the light incident surface of the photosensitive element and covers the light incident surface of the photosensitive element; the filter layer is used for filtering light rays incident to the display screen;

the filter layer comprises a laminated silicon oxide layer and a titanium oxide layer.

14. The display screen of any one of claims 1-13, wherein the switching transistor is a top gate transistor; the display screen also comprises a shading layer;

the shading layer is positioned on one side of the grid electrode of the switching transistor far away from the active layer of the switching transistor, and the shading layer covers the grid electrode of the switching transistor.

15. An electronic device comprising a display screen as claimed in any one of claims 1 to 14.