CN113325663A - Preparation method of mask base plate - Google Patents
Preparation method of mask base plate Download PDFInfo
- Publication number
- CN113325663A CN113325663A CN202110535823.4A CN202110535823A CN113325663A CN 113325663 A CN113325663 A CN 113325663A CN 202110535823 A CN202110535823 A CN 202110535823A CN 113325663 A CN113325663 A CN 113325663A
- Authority
- CN
- China
- Prior art keywords
- film
- sulfuric acid
- photoresist
- hydrogen peroxide
- reflection film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0664—Carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention provides a preparation method of a mask base plate, which comprises the following steps: providing a transparent substrate; depositing a light shielding film on a transparent substrate; depositing an antireflection film on the light-shielding film; carrying out oxidation treatment on the anti-reflection film by adopting sulfuric acid and/or hydrogen peroxide to form an anti-reflection film oxide film; coating photoresist on the anti-reflection film oxide film to form a photoresist layer; the photoresist is a chemically amplified photoresist.
Description
Technical Field
The invention belongs to the field of semiconductor manufacturing, and particularly relates to a preparation method of a mask base plate.
Background
Photolithography (Lithography) technology using a Photomask (Photomask) is required for forming a fine pattern on a semiconductor integrated circuit. In an environment that is increasingly considered to be economically maximized, any technology or process that can improve product stability or improve yield per unit time is necessarily fully utilized, which is fully proven by the application of the mask technology in the semiconductor technology. It is the advent of the photomask technology that has enabled semiconductors to achieve stable, fast, ultra-large scale production capabilities. Meanwhile, as the performance and the integration of semiconductor integrated circuits are increased and the requirements for higher precision are increased, the use of chemically amplified photoresist in the photomask is more and more extensive. However, the use of the chemically amplified resist makes it easy to form a photoresist pattern in a foot shape, and further makes it difficult to form a stable pattern on the light-shielding film and the antireflection film, and finally, there is always a defect in the pattern formed.
Disclosure of Invention
The present invention has been made in an intensive study for the cause of the occurrence of defects. The following are found: since the amplified resist contains an acidic substance, H is generated when the resist layer is irradiated with an electron beam or an excimer beam+Quantum, which causes neutralization reaction on the contact surface between the resist and the antireflection film, affects H+The quantum diffusion affects the solubility of the developer.
Referring to fig. 1, a conventional mask blank 20 is exemplified, which is composed of a light shielding film 12, an anti-reflection film 13, and a photoresist layer 14 laminated in this order on a transparent substrate 11. The light-shielding film 12 and the antireflection film 13 are usually made of a chromium metal compound. The photoresist used for forming the photoresist layer 14 is a Chemically Amplified photoresist (chemical Amplified Resist) for manufacturing a high-precision photomask. The chemically amplified photoresist is composed of an alkali-soluble Resin (Resin) and a Photo Acid Generator (Photo Acid Generator) from which a strong Acid (H) is generated by a photomask according to an exposure process+) The thermal energy of Post Exposure Bake (Post Exposure cake) is used as a medium to induce the diffusion and decomposition reaction of strong acid, so as to form a Pattern (Pattern) with High Resolution.
Referring to fig. 2, the conventional photomask 30 is formed by performing a post-exposure baking process after selective exposure of a prescribed pattern on a mask substrate, and forming a light shielding film pattern 12a and an anti-reflection film pattern 13a on a transparent substrate 11 through a developing and etching process.
Referring to fig. 3 and 4, when an electron beam or a light beam is irradiated to the photoresist layer 14, a large amount of H is generated inside thereof+Quantum (in fig. 3, · ═ quantum (H +)). The H+The quantum is a substance which can be converted into a soluble developing solution by diffusion of the quantum and serving as a medium for inducing a decomposition reaction after a Post Exposure Bake (Post Exposure Bake) process, and electrons (e) in the anti-reflection film are generated on the contact surface of the anti-reflection film and the photoresist layer-) With diffused H+The quantum can generate neutralization reaction through displayThe exposed portions are dissolved by the exposed chemically amplified resist, and the remaining unexposed portions are patterned. When a resist pattern is formed by applying a resist on the alkali anti-reflection film of the chemically amplified resist, the electrons generated in the alkali anti-reflection film neutralize the quantum, thereby suppressing the diffusion and decomposition of the quantum. Therefore, the solubility of the photoresist developer is lowered, and a photoresist pattern having a foot shape 19 (see fig. 4) is formed, which further causes defective patterns to be formed on the light-shielding film and the anti-reflection film. It is difficult to manufacture a photomask having a precise critical dimension using a photoresist pattern in the form of a pin.
To this end, the present invention provides a method for preparing a mask blank, the method comprising:
providing a transparent substrate 11;
depositing a light shielding film 12 on the transparent substrate 11;
depositing an antireflection film 13 on the light-shielding film 12;
carrying out oxidation treatment on the anti-reflection film 13 by adopting sulfuric acid and/or hydrogen peroxide to form an anti-reflection film oxide film 15;
coating photoresist on the anti-reflection film oxide film to form a photoresist layer 14; the photoresist is a chemically amplified photoresist.
According to the preparation method of the mask base plate, the anti-reflection film oxide film is arranged between the anti-reflection film and the photoresist, so that an effective isolation effect is achieved, and the neutralization reaction of partial region quantum and electrons between the anti-reflection film and the photoresist is avoided, so that when patterns are formed through exposure and development treatment, foot-shaped photoresist patterns are not easy to generate, and the accuracy of a photomask is ensured. In addition, the mode uses sulfuric acid and/or hydrogen peroxide for oxidation treatment, and a dense oxide film can be quickly formed by utilizing the strong oxidation of the substances, so that the mode is superior to a weak oxidation mode. Meanwhile, the method does not introduce excessive exogenous substances basically, the final performance of the product is controllable, and the process is simple and feasible.
In the method for preparing the mask base plate provided by the invention, the transparent substrate 11, the light shielding film 12, the anti-reflection film 13 and the photoresist layer 14 can adopt materials and specifications which are conventional in the field, including components, length, thickness and the like. Meanwhile, the invention does not limit that other auxiliary films can be simply added between the corresponding layers, and the core is to directly oxidize the anti-reflection film so as to form the anti-reflection film oxide film with the isolation effect between the anti-reflection film and the photoresist layer. Meanwhile, such isolation does not require that the anti-reflective coating oxide film and the photoresist layer must be in direct contact, for example, an adhesive (hexamethyldisilazane or the like) may be applied between the anti-reflective coating oxide film and the photoresist layer to increase the adhesion between the photoresist and the substrate.
In the preparation method of the mask base plate provided by the invention, preferably, the sulfuric acid is concentrated sulfuric acid, and the mass percentage concentration of the sulfuric acid is more than or equal to 98%; the mass percentage concentration of the hydrogen peroxide is 27-35%, and the preferred mass percentage concentration is 31%. The oxidation strength can be guaranteed by using concentrated sulfuric acid and hydrogen peroxide with higher concentration. In addition, when the concentrated sulfuric acid and the hydrogen peroxide are used simultaneously, the strong acid environment strengthens the oxidizing capability of the hydrogen peroxide, so that the oxidizing effect on the anti-reflection film is better. However, when preparing the mixed solution, the exothermic reaction is remarkable and the operation needs attention.
In the preparation method of the mask base plate provided by the invention, preferably, when the mixed solution of sulfuric acid and hydrogen peroxide is used for oxidation treatment, the volume ratio of the sulfuric acid to the hydrogen peroxide is 7: 1-3: 1. more preferably, the volume ratio of the sulfuric acid to the hydrogen peroxide is 6: 1-5: 1.
in the method for manufacturing a mask blank according to the present invention, a mask blank formed by sequentially depositing/coating a light-shielding film, an antireflection film, and an antireflection film oxide film photoresist layer on a transparent substrate is of a conventional BIM type (binary mask blank). A PSM type (phase shift mask) is formed by depositing a phase shift inversion film on a transparent substrate, and then depositing/coating a light-shielding film, an anti-reflection film oxide film, and a photoresist layer. Therefore, preferably, the method further comprises the step of depositing a phase shift inversion film on the transparent substrate before depositing the light shielding film on the transparent substrate.
In the method for manufacturing a mask blank according to the present invention, the method preferably further comprises the step of depositing Hexamethyldisilazane (HMDS) on the anti-reflective film oxide film before coating a photoresist on the anti-reflective film oxide film. The HMDS is introduced, so that the adhesion between the anti-reflection film oxide film and the photoresist can be improved. Reduce the generation of defects and produce a high quality mask blank.
In the method for manufacturing a mask blank according to the present invention, the antireflection film is preferably oxidized with sulfuric acid and/or hydrogen peroxide, and the thickness of the antireflection film oxide film formed by oxidation may be set to be equal to
The film thickness can play a good isolation role and can also ensure the factors such as light transmittance and the like; of course, the film thickness can be properly adjusted according to different materials and different processes when in use.
In the method for preparing the mask substrate, the mask substrate is Quartz (Quartz) or calcium fluoride (CaF)2) And a chromium metal light-shielding film formed on the transparent substrate, wherein the Transmittance (Transmittance) of the substrate is maintained to be 85% or more for 365nm wavelength i-line and 248nm wavelength krypton fluoride Excimer Laser (KrF Excimer Laser) of an ultra-high pressure mercury lamp, and a chromium metal anti-reflection film containing a basic substance is formed on the light-shielding film. Therefore, the transparent substrate preferably has a light transmittance of more than 85%.
In the method for manufacturing a mask substrate according to the present invention, preferably, the light-shielding film may be a chromium compound light-shielding film; in a further preferred embodiment, the chromium compound light-shielding film may be composed of one or two of chromium nitride (CrN) and chromium oxycarbonitride (CrCN).
In the method for producing a mask blank according to the present invention, the antireflection film is preferably a chromium compound antireflection film; in a more preferred embodiment, the chromium compound antireflection film is a metal chromium compound antireflection film containing oxygen and nitrogen. In a more preferred embodiment, the component of the metal chromium compound antireflection film is one or a combination of chromium oxide (CrO), chromium oxynitride (CrON), and chromium oxycarbonitride (CrCON).
In the method for manufacturing a mask blank according to the present invention, preferably, the light-shielding film and/or the antireflection film is manufactured by a sputtering deposition process, and the process parameters may be performed in a conventional manner. One preferred way is: in the sputtering deposition process, argon and helium are jointly used for bombarding a target (a film with better performance can be formed by using helium), and reaction gas is introduced to form the shading film and/or the anti-reflection film.
In the method for manufacturing a mask substrate according to the present invention, when the light-shielding film and/or the antireflection film is manufactured by a sputtering deposition process, conventional process conditions may be employed. Preferably, it can be set as: the process pressure of the sputtering cavity is 0.1-0.5 Pa, and the power is within the range of 0.5-2W.
In the method for preparing a mask substrate according to the present invention, preferably, the photoresist layer may be formed by spin coating or Capillary coating when the photoresist layer is formed.
In the method for preparing a mask blank according to the present invention, preferably, the components of the chemically amplified resist include a polymer resin, a photoacid generator, a solvent, and an additive; the polymer resin is a polymer resin that can undergo alkaline dissolution.
Drawings
Description of the pictures:
FIG. 1 is a schematic cross-sectional view of a mask blank manufactured by a conventional method;
FIG. 2 is a schematic cross-sectional view of a conventional mask;
FIG. 3 is a schematic diagram illustrating a phenomenon during an exposure process of a problem point in a conventional method;
FIG. 4 is a schematic diagram illustrating a footing phenomenon in a conventional method;
fig. 5 is a schematic cross-sectional view of a light-shielding film and a transparent substrate prepared in example 1;
FIG. 6 is a schematic cross-sectional view of a transparent substrate, a light-shielding film and an antireflection film prepared in example 1;
FIG. 7 is a schematic cross-sectional view of a transparent substrate, a light-shielding film, an antireflection film, and an antireflection oxide film produced in example 1;
FIG. 8 is a schematic cross-sectional view of a transparent substrate, a light-shielding film, an antireflection film oxide film, and an HMDS film layer prepared in example 1;
FIG. 9 is a mask blank prepared in example 1;
FIG. 10 is a photo-mask prepared in example 1.
Element number description:
11 transparent substrate
12 light shielding film
12a light shielding film pattern
13 antireflection film
13a anti-reflection film pattern
14 photoresist layer
15 anti-reflection film oxide film
15a antireflection film oxide film pattern
16 HMDS film layer
19 feet shape
20 conventional mask master
30 conventional photomask
40 mask blank manufactured in example 1
50 photomask manufactured in example 1
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example 1
Referring to fig. 5, a transparent substrate 11 of a 6-inch quartz structure is formed by a Reactive Sputtering (Reactive Sputtering) process
A chromium nitride CrN light-shielding film 12 of a thickness.
Referring to fig. 6, a selective reactive sputtering method is formed on the light shielding film 12
A thick chromium oxynitride (CrON) antireflection film 13.
Referring to fig. 7, in order to prevent the photoresist footing from being formed on the alkaline anti-reflection film 13, a mixed solution of concentrated sulfuric acid (98% by mass) and hydrogen peroxide (31% by mass) at a ratio of 5:1 was subjected to a surface treatment at 90 ℃ for 20 minutes by a Dipping (Dipping) method to form an anti-reflection film oxide film 15. At this time, the proportion of oxygen is increased or the oxygen is completely oxidized due to the chemical reaction of sulfuric acid and hydrogen peroxide on the surface of the basic chromium oxynitride (Cron), and the basic material is hardly left on the surface of the anti-reflection film after the surface treatment, so that the photoresist of the photomask does not undergo a neutralization reaction of a strong acid in the pattern forming process. The strong acid decomposition and the amplification reaction at the interface of the anti-reflection film and the photoresist are inactive, and the phenomenon of footing does not occur basically during the photoresist pattern forming process.
Referring to fig. 8, hexamethyldisilazane (hereinafter, abbreviated as HMDS) is used to improve the adhesion between the photoresist and the anti-reflective coating 13 subjected to the sulfuric acid and hydrogen peroxide surface treatment. In this case, the HMDS film layer 16 was formed by performing HMDS vapor coating on a Hot Plate (Hot-Plate) at 100 ℃ for 20 seconds using argon (Ar) gas for replacing HMDS vapor.
Referring to FIG. 9, a chemically amplified photoresist FEP-171 (Fuji photo film) is coated on the HMDS film layer 16 by spin coating
After a photoresist layer 14 of thickness, a 20 minute Soft Bake (Soft baker) process at 120 ℃ is performed on a hot plate to manufacture a mask master 40.
Referring to fig. 10, the mask substrate 40 is subjected to exposure, post-exposure baking, development, etching, and the like to finally manufacture a mask 50 having a light shielding film pattern 12a, an anti-reflection film pattern 13a, and an anti-reflection film oxide film pattern 15a on a transparent substrate.
In the mask blank manufactured by the example of the present invention, electrons generated from the alkali anti-reflection film cannot react with quantum formation generated from the photosensitive layer in the exposure process due to the oxide film formed at the interface between the anti-reflection film and the photoresist. The anti-reflection film oxide film functions as a Barrier (Barrier) and can form a photoresist pattern having an excellent pattern.
Therefore, the present invention provides an embodiment that can form an oxide film on an antireflection film of a conventional structural material without replacing the antireflection film of a mask substrate with a new structural material, and can form a resist pattern having an excellent pattern when exposing a chemically amplified resist, thereby manufacturing a photomask having a high-precision dimension.
Claims (10)
1. A method of making a mask blank, the method comprising:
providing a transparent substrate;
depositing a light shielding film on the transparent substrate;
depositing an antireflection film on the light-shielding film;
carrying out oxidation treatment on the anti-reflection film by adopting sulfuric acid and/or hydrogen peroxide to form an anti-reflection film oxide film;
coating photoresist on the anti-reflection film oxide film to form a photoresist layer; the photoresist is a chemically amplified photoresist.
2. The method for preparing a mask substrate according to claim 1, wherein the sulfuric acid is concentrated sulfuric acid having a mass percentage concentration of 98% or more; the mass percentage concentration of the hydrogen peroxide is 27-35%.
3. The method for preparing the mask base plate according to any one of claims 1 to 2, wherein when the oxidation treatment is performed using a mixed solution of sulfuric acid and hydrogen peroxide, the volume ratio of sulfuric acid to hydrogen peroxide is 7: 1-3: 1; preferably 6: 1-5: 1.
4. the method for producing a mask blank according to claim 1, further comprising a step of depositing hexamethyldisilazane on the anti-reflection film oxide film before coating a photoresist on the anti-reflection film oxide film.
5. The method for producing a mask blank according to claim 1, wherein the thickness of the oxide film of the antireflection film is formed when the antireflection film is subjected to oxidation treatment using sulfuric acid and/or hydrogen peroxide
6. The method for preparing a mask substrate according to claim 1, wherein the light shielding film and/or the anti-reflection film is prepared by a sputtering deposition process in which a target is bombarded with argon gas and helium gas together, and a reaction gas is introduced to form the light shielding film and/or the anti-reflection film.
7. The method for producing a mask blank according to claim 1, wherein the light-shielding film is composed of a component selected from CrN and/or CrCN.
8. The method of claim 1, wherein the antireflective film comprises a composition selected from the group consisting of one or more of CrO, CrON, and CrCON.
9. The method for producing a mask blank according to claim 1, wherein the oxidation treatment is carried out by immersing the antireflection film in an aqueous solution of sulfuric acid and/or hydrogen peroxide at a temperature of 50 to 95 ℃ for 5 to 50 minutes.
10. The method for producing a mask blank according to claim 1, wherein the oxidation treatment is carried out by immersing the antireflection film in a sulfuric acid and/or hydrogen peroxide solution at a temperature of 80 to 95 ℃ for 15 to 25 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110535823.4A CN113325663A (en) | 2021-05-17 | 2021-05-17 | Preparation method of mask base plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110535823.4A CN113325663A (en) | 2021-05-17 | 2021-05-17 | Preparation method of mask base plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113325663A true CN113325663A (en) | 2021-08-31 |
Family
ID=77415737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110535823.4A Pending CN113325663A (en) | 2021-05-17 | 2021-05-17 | Preparation method of mask base plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113325663A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003107676A (en) * | 2001-09-28 | 2003-04-09 | Hoya Corp | Mask blank, its manufacturing method and manufacturing method for mask |
| CN108319103A (en) * | 2017-01-16 | 2018-07-24 | Hoya株式会社 | The manufacturing method of its phase shifting mask of phase shift mask blank and use and the manufacturing method of display device |
-
2021
- 2021-05-17 CN CN202110535823.4A patent/CN113325663A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003107676A (en) * | 2001-09-28 | 2003-04-09 | Hoya Corp | Mask blank, its manufacturing method and manufacturing method for mask |
| CN108319103A (en) * | 2017-01-16 | 2018-07-24 | Hoya株式会社 | The manufacturing method of its phase shifting mask of phase shift mask blank and use and the manufacturing method of display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100811431B1 (en) | Method of Manufacturing Semiconductor Device | |
| TWI483079B (en) | Pattern formation method | |
| US20060160028A1 (en) | Method of forming fine patterns of a semiconductor device | |
| CN108983546A (en) | Method for photolithography | |
| US7662542B2 (en) | Pattern forming method and semiconductor device manufacturing method | |
| TWI606486B (en) | Method for manufacturing semiconductor device and material utilized in photolithography process | |
| US6632582B2 (en) | Pattern formation material and pattern formation method | |
| TWI454451B (en) | Resist pattern improving material, method for forming resist pattern, and method for producing semiconductor device | |
| KR100635019B1 (en) | Blank Mask and Photo Mask and Method for Manufacturing thereof | |
| JP3509760B2 (en) | Method for manufacturing semiconductor device | |
| CN113325663A (en) | Preparation method of mask base plate | |
| JPH0463349A (en) | Photomask blank and photomask | |
| JP2621533B2 (en) | Pattern formation method | |
| JP2002006478A (en) | Mask for exposure and method for producing the same | |
| JPH09134862A (en) | Forming method of resist pattern | |
| CN113311660B (en) | Mask base plate manufacturing method and gluing equipment with plasma heating device | |
| CN113296355A (en) | Mask base plate and preparation method thereof and photomask | |
| US7348130B2 (en) | Electron exposure to reduce line edge roughness | |
| US7998658B2 (en) | Pattern forming method | |
| JP2003140314A (en) | Photomask blank, method for manufacturing the same and method for manufacturing photomask by using the photomask blank | |
| KR20110016737A (en) | Blank mask and photo mask and method for manufacturing thereof | |
| KR20100116343A (en) | Blank mask and photo mask and method for manufacturing thereof | |
| JP2005010467A (en) | Halftone phase shift mask, its manufacturing method and method for transferring mask pattern by using same | |
| JP2616820B2 (en) | Method of forming resist pattern | |
| KR20040081678A (en) | Method for fabricating patterns by photolithography |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |