CN113314430B - Monitoring method and monitoring system in CMP (chemical mechanical polishing) process - Google Patents
Monitoring method and monitoring system in CMP (chemical mechanical polishing) process Download PDFInfo
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- CN113314430B CN113314430B CN202110006885.6A CN202110006885A CN113314430B CN 113314430 B CN113314430 B CN 113314430B CN 202110006885 A CN202110006885 A CN 202110006885A CN 113314430 B CN113314430 B CN 113314430B
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- 238000000034 method Methods 0.000 title claims abstract description 115
- 238000012544 monitoring process Methods 0.000 title claims abstract description 71
- 230000008569 process Effects 0.000 title claims abstract description 56
- 238000005498 polishing Methods 0.000 title description 3
- 239000000126 substance Substances 0.000 title description 3
- 238000005530 etching Methods 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 230000000877 morphologic effect Effects 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000012937 correction Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 63
- 238000012545 processing Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000009658 destructive testing Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 238000005389 semiconductor device fabrication Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000007405 data analysis Methods 0.000 description 1
- 238000013499 data model Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010801 machine learning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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Abstract
The application discloses a monitoring method and a monitoring system in a CMP process, wherein the monitoring method comprises the following steps: providing a first photomask having a first pattern; the first graph has a preset first graph size parameter; etching one surface of the wafer based on the first photomask; the surface of the wafer with the etching pattern is a first surface; after depositing a metal layer on the first surface, performing CMP treatment on the first surface for a plurality of times; after finishing the last CMP treatment, acquiring first morphology information of the first surface; and determining the association relation of the first morphology information and the first graph size parameter. According to the technical scheme, only one wafer is needed, the shape information of the first surface is obtained only after the last CMP treatment is completed, data acquisition is not needed in different process stages, the data acquisition period is short, the operation is simple, and the efficiency is high.
Description
Technical Field
The application relates to the technical field of semiconductor device manufacturing processes, in particular to a monitoring method and a monitoring system in a CMP process.
Background
With the continuous development of science and technology, more and more electronic devices are widely applied to daily life and work of people, bring great convenience to daily life and work of people, and become an indispensable important tool for people at present.
The control components of the electronic device that perform the various functions are integrated circuits, and the main functional elements of the integrated circuits are the various semiconductor elements. Semiconductor devices are typically manufactured from wafers, and CMP (chemical mechanical polishing) is an important process in semiconductor device fabrication. Global planarization is a target of CMP processing in semiconductor device fabrication.
In the prior art, the process parameters of the sample wafer need to be monitored, in the process, data acquisition needs to be respectively carried out at different process stages, the data acquisition process period is long, the operation mode is complex, and the efficiency is low.
Disclosure of Invention
In view of this, the present application provides a monitoring method and a monitoring system in a CMP process, and the scheme is as follows:
a method of monitoring in a CMP process, the method comprising:
providing a first photomask having a first pattern; the first graph has a preset first graph size parameter;
etching one surface of the wafer based on the first photomask; the surface of the wafer with the etching pattern is a first surface;
after depositing a metal layer on the first surface, performing CMP treatment on the first surface for a plurality of times;
after finishing the last CMP treatment, acquiring first morphology information of the first surface;
and determining the association relation of the first morphology information and the first graph size parameter.
Preferably, in the above monitoring method, the method for acquiring the first morphology information includes:
acquiring relative height difference information of different positions of the first surface and thickness information of different positions of the wafer in a first direction; the first direction is perpendicular to the wafer;
wherein the first topographical information includes the relative height difference information and the thickness information.
Preferably, in the above monitoring method, the method for obtaining the information of the relative altitude difference includes:
and scanning the first surface through an interferometer to obtain the relative height difference information.
Preferably, in the above monitoring method, the method for obtaining the thickness information includes:
and measuring the cross section of the wafer by a scanning electron microscope or a transmission electron microscope to obtain the thickness information.
Preferably, in the above monitoring method, the monitoring method further includes:
and based on the association relation, obtaining the correction parameters of the first graph size parameters.
Preferably, in the above monitoring method, the monitoring method further includes:
predicting second morphological information corresponding to a second photomask with second graphic size parameters if the wafer adopts the second photomask based on the second graphic size parameters and the association relation;
wherein the second graphic size parameter is different from the first graphic size parameter.
The present application also provides a monitoring system in a CMP process, the monitoring system comprising:
etching equipment for etching one surface of the wafer based on the first photomask; the surface of the wafer with the etching pattern is a first surface;
a deposition apparatus for depositing a metal layer on the first surface;
a CMP apparatus for performing a plurality of CMP processes on the first surface;
the acquisition equipment is used for acquiring first morphology information of the first surface after finishing the last CMP treatment;
and the computing equipment is used for determining the association relation between the first morphology information and the first graph size parameter.
Preferably, in the above monitoring system, the collecting device includes:
the interferometer is used for scanning the first surface to obtain relative height difference information of different positions of the first surface;
the SEM or TEM is used for measuring the cross section of the wafer to obtain thickness information of different positions of the wafer in the first direction; the first direction is perpendicular to the wafer;
wherein the first topographical information includes the relative height difference information and the thickness information.
Preferably, in the above monitoring system, the computing device is further configured to obtain a calibration parameter of the first graphic size parameter based on the association relationship.
Preferably, in the above monitoring system, the computing device is further configured to predict, based on a second pattern size parameter and the association relationship, second shape information corresponding to a second mask having the second pattern size parameter, if the wafer is used;
wherein the second graphic size parameter is different from the first graphic size parameter.
As can be seen from the above description, in the monitoring method and the monitoring system in the CMP process provided by the technical solution of the present application, the monitoring method includes: providing a first photomask having a first pattern; the first graph has a preset first graph size parameter; etching one surface of the wafer based on the first photomask; the surface of the wafer with the etching pattern is a first surface; after depositing a metal layer on the first surface, performing CMP treatment on the first surface for a plurality of times; after finishing the last CMP treatment, acquiring first morphology information of the first surface; and determining the association relation of the first morphology information and the first graph size parameter. According to the technical scheme, only one wafer is needed, the shape information of the first surface is obtained only after the last CMP treatment is completed, data acquisition is not needed in different process stages, the data acquisition period is short, the operation is simple, and the efficiency is high.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the related art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is apparent that the drawings in the following description are only embodiments of the present application, and other drawings may be obtained according to the provided drawings without inventive effort to those skilled in the art.
The structures, proportions, sizes, etc. shown in the drawings are shown only in connection with the present disclosure, and should not be construed as limiting the scope of the invention, since any modification, variation in proportions, or adjustment of the size, which would otherwise be used by those skilled in the art, would not have the essential significance of the present disclosure, would not affect the efficacy or otherwise be achieved, and would still fall within the scope of the present disclosure.
FIG. 1 is a flow chart of a monitoring method in a conventional CMP process;
FIG. 2 is a schematic flow chart of a monitoring method in a CMP process according to an embodiment of the present application;
FIG. 3 is a flow chart of another method for monitoring a CMP process according to an embodiment of the present disclosure;
FIG. 4 is a flow chart of another method for monitoring a CMP process according to an embodiment of the present disclosure;
FIG. 5 is a comparative graph provided in an embodiment of the present application;
fig. 6 is a schematic structural diagram of a monitoring system according to an embodiment of the present application.
Detailed Description
Embodiments of the present application will now be described more fully hereinafter with reference to the accompanying drawings, in which it is shown, and in which it is evident that the embodiments described are exemplary only some, and not all embodiments of the application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
As shown in fig. 1, fig. 1 is a flow chart of a monitoring method in a conventional CMP process, the method comprising:
step S11: a photomask is prepared.
The mask with the preset pattern is designed according to the wafer process requirement.
Step S12: preparing a sample wafer and collecting wafer data.
And transferring the pattern in the photomask to the surface of the wafer through an etching process to form the sample wafer. And then depositing a metal layer on the surface of the wafer with the etched pattern, and performing three times of CMP treatment on the surface deposited with the metal layer.
In step S12, after the etching is completed, a first data acquisition process is required, after the deposition process is completed, a second data acquisition process is required, after the first CMP process is completed, a third data acquisition process is required, and after the third CCP process is completed, a fourth data acquisition process is required. Each data acquisition process requires data acquired by AFM (atomic force microscope) and also by SEM (scanning electron microscope) or TEM (transmission electron microscope).
Step S13: wafer data is analyzed.
Through data processing, defects of a photomask preparation pattern and defects and shortages of different processes of a wafer can be analyzed.
In the method shown in fig. 1, since the data acquisition of SEM and TEM requires destructive testing of wafers, the entire process requires 4 wafers. And through the first wafer, after etching is completed, performing first data acquisition. Because of the need of destructive testing, after the first data acquisition, a second wafer is needed to be adopted for etching again, and after the metal layer is deposited, the second data acquisition is carried out. And after the second data acquisition is completed, a third wafer is needed to be adopted for etching again, a metal layer is deposited, the first CMP treatment is carried out, and the third data acquisition is carried out. Because of the need of destructive testing, after the third data acquisition, the fourth wafer needs to be replaced, etching is performed again, and after the metal layer is deposited, the fourth data acquisition is performed after three times of CMP processing are performed in sequence.
As can be seen, in the conventional technology, the wafer data collected four times can represent the variation of the height of the wafer surface at different process stages. However, the method needs to adopt AFM, SEM and TEM which are long in time consumption, and four wafers are needed, so that the process time is further greatly increased, the total test time is 2 months, the time consumption is long, and the manufacturing cost is high.
In order to solve the above problems, the embodiments of the present application provide a monitoring method and a monitoring system in a CMP process, where only one wafer is needed, and only the topography information of the first surface is needed after the last CMP process is completed, and data acquisition is not needed in different process stages, so that the data acquisition period is short, the operation is simple, and the efficiency is high.
In order that the above-recited objects, features and advantages of the present application will become more readily apparent, a more particular description of the invention briefly described above will be rendered by reference to specific embodiments that are illustrated in the appended drawings.
Referring to FIG. 2, FIG. 2 is a flow chart of a method for monitoring a CMP process according to an embodiment of the present application, the method includes
Step S21: providing a first photomask having a first pattern; the first graph has a preset first graph size parameter.
Step S22: and etching one surface of the wafer based on the first photomask.
The surface of the wafer with the etched pattern is a first surface. And etching the first surface of the wafer by adopting the first photomask through a photoetching process, and transferring a first pattern of the photomask to the first surface.
Step S23: and after the metal layer is deposited on the first surface, performing CMP treatment on the first surface for a plurality of times.
Generally, the etched first surface has a plurality of scribe lines intersecting perpendicularly to divide the wafer into a plurality of chip regions, and the scribe lines have a depth less than the thickness of the wafer. The metal layer includes wiring, pads, and in-hole metal fill structures within the scribe line and within the chip region.
Step S24: and after the last CMP treatment is completed, acquiring first morphology information of the first surface.
In general, the number of times of CMP processing is set to a plurality of times based on demand, and three times of CMP processing are generally employed. And after the third CMP processing is completed, data acquisition is carried out on the wafer, and the first morphology information of the first surface is obtained.
Step S25: and determining the association relation of the first morphology information and the first graph size parameter.
When etching, deposition and CMP process parameters are set, the first shape information of the wafer depends on a first pattern size parameter of the first photomask, and the first shape information and the first pattern size parameter have an association relation. The association can be determined by a conventional data analysis process. And if the first graph parameters are used for linear fitting, obtaining the association relation.
According to the technical scheme, only one wafer is needed, the morphology information of the first surface is obtained only after the last CMP treatment is completed, data acquisition is not needed in different process stages, the data acquisition period is short, the operation is simple, and the efficiency is high. Based on the correspondence, a designer can find a planarization result in the CMP process before actual production, so that the mask pattern is optimally designed before designing a mask required for actual production, thereby obtaining a first mask meeting the product quality requirement.
In the monitoring method of the embodiment of the present application, the method for obtaining the first morphology information includes: acquiring relative height difference information of different positions of the first surface and thickness information of different positions of the wafer in a first direction; the first direction is perpendicular to the wafer; wherein the first topographical information includes the relative height difference information and the thickness information.
The method for acquiring the relative height difference information when acquiring the first morphology information comprises the following steps: and scanning the first surface through an interferometer to obtain the relative height difference information. The interferometer is a laser dynamic interferometer, and the first surface can be scanned by laser to complete the acquisition process of the relative height difference information.
The method for acquiring the thickness information when the first morphology information is acquired comprises the following steps: and measuring the cross section of the wafer by a scanning electron microscope or a transmission electron microscope to obtain the thickness information. Whether a scanning electron microscope or a transmission electron microscope is used, a cross section needs to be formed on the wafer so as to test thickness information at different positions on the wafer.
The monitoring method of the embodiment of the application can greatly save the cost, and the data acquisition process is only required to acquire the first morphology information after the last CMP processing, so that the final data acquisition process can be completed by only one wafer, and compared with the method requiring 4 wafers shown in FIG. 1, the cost and the data acquisition period are greatly reduced.
And the data acquisition of AFM is not needed, the relative height difference information is acquired through an Interferometer (IFM), the relative height difference information is obtained through an optical signal, the operation is simpler, the data accuracy is better, and the measurement time is shorter.
Therefore, according to the monitoring method, the data acquisition period is shorter, and the association relationship can be obtained through a shorter time. Based on the association relationship, the first pattern size parameter of the first photomask can be more quickly checked in the subsequent embodiment. Only after the last CMP process is needed for data acquisition, no delay waiting time is required between each process stage.
As shown in fig. 3, fig. 3 is a schematic flow chart of another monitoring method in a CMP process according to an embodiment of the present application, based on the manner shown in fig. 2, the manner shown in fig. 3 further includes:
step S25: and based on the association relation, obtaining the correction parameters of the first graph size parameters.
Based on the corresponding relation, whether the acquired first appearance information meets the required product standard can be determined, if not, based on the association relation, the correction parameter of the first pattern size parameter is obtained, the first pattern size parameter can be modified based on the correction parameter to prepare a first photomask with the corrected first pattern parameter, and therefore a sample wafer can be prepared based on the first photomask with the corrected first pattern parameter, and the sample wafer has the first appearance information meeting the product requirement.
As shown in fig. 4, fig. 4 is a schematic flow chart of another monitoring method in a CMP process according to an embodiment of the present application, based on the manner shown in fig. 2, the manner shown in fig. 4 further includes:
step S25': and predicting second morphological information corresponding to a second photomask with the second graphic size parameter if the wafer adopts the second photomask based on the second graphic size parameter and the association relation.
Wherein the second graphic size parameter is different from the first graphic size parameter.
In other embodiments, step S24 may be followed by step S25 and step S25 'at the same time, and step S25 may be performed first or step S25' may be performed first after step S24. The sequence of step S25 and step S25' is not limited in the embodiment of the present application.
If the photomasks with different sizes are replaced, the monitoring method can be not required to be repeated, and based on the association relation, the corresponding second morphological information when different photomasks are adopted can be predicted.
The mask has a plurality of grids. The pattern dimension parameters of the mask include geometric dimension data of the mask, specifically including the width, gap, density and circumference of the grid in the mask. The first photomask and the second photomask have different pattern size parameters, and second morphological information corresponding to the second pattern parameter can be predicted based on the corresponding relation between the first pattern size parameter and the first morphological information without carrying out the monitoring method.
In the embodiment of the application, the association relation can be obtained through a machine learning process, a data model comprising the association relation is established, and when different photomasks need to be replaced, new morphology information corresponding to new graphic size parameters can be obtained through the model only by inputting the different graphic size parameters.
Fig. 5 shows a comparative graph provided in the embodiment of the present application, in fig. 5, fig. 5 (a) is a simulated morphology graph of second morphology information predicted based on the monitoring method described in the embodiment of the present application, fig. b is a graph of thickness variation at different positions of a cross section of a rectangular area in a direction indicated by an arrow in fig. a, fig. c is an actual morphology graph of second morphology information obtained by actually measuring by using the monitoring method of the present application, and fig. d is a graph of thickness variation at different positions of a cross section of a rectangular area in a direction indicated by an arrow in fig. c. In fig. (b) and (d), the first surface before wafer etching is taken as a reference surface with 0 thickness.
According to the monitoring method, if second morphological information corresponding to the second mask is predicted, etching, metal layer deposition, CMP processing for preset times and measurement of the second morphological information do not need to be carried out through a wafer actually, and an actual morphological diagram shown in a diagram (b) is obtained based on the predicted second morphological information.
And etching the wafer by adopting a second mask, depositing a metal layer on the surface of the wafer, actually collecting second morphology information after finishing CMP treatment for preset times, and obtaining an actual morphology graph shown in the graph (c) based on the actually collected second morphology information.
Based on comparison of the graph (b) and the graph (d), the variation trend of the predicted graph obtained by the monitoring method is the same as that of the actual measured graph, the variation trend of the second morphological information predicted by the technical scheme is the same as that of the actual measured second morphological information, and the predicted thickness value of the graph (b) is equivalent to the actual measured thickness value at the same position in the graph (d) within the error allowable range.
Based on the foregoing embodiments, another embodiment of the present application further provides a monitoring system in a CMP process, as shown in fig. 6, fig. 6 is a schematic structural diagram of the monitoring system provided in the embodiment of the present application, where the monitoring system includes:
an etching device 11, wherein the etching device 11 is used for etching one surface of the wafer based on the first photomask; the surface of the wafer with the etching pattern is a first surface;
a deposition apparatus 12, the deposition apparatus 12 being for depositing a metal layer on the first surface;
a CMP apparatus 13, the CMP apparatus 13 being configured to perform a plurality of CMP processes on the first surface;
the collecting device 14 is used for obtaining first morphology information of the first surface after the last CMP treatment is completed by the collecting device 14;
a computing device 15, where the computing device 15 is configured to determine an association relationship between the first profile information and the first graphic size parameter. The computing device 15 may be an industrial computer.
In the monitoring system according to the embodiment of the present application, the collecting device 14 includes:
the interferometer is used for scanning the first surface to obtain relative height difference information of different positions of the first surface;
the SEM or TEM is used for measuring the cross section of the wafer to obtain thickness information of different positions of the wafer in the first direction; the first direction is perpendicular to the wafer;
wherein the first topographical information includes the relative height difference information and the thickness information.
In the monitoring system according to the embodiment of the present application, the computing device 15 is further configured to obtain a calibration parameter of the first graphic size parameter based on the association relationship.
In the monitoring system according to the embodiment of the present application, the computing device 15 is further configured to predict, based on a second pattern size parameter and the association relationship, second shape information corresponding to a second mask having the second pattern size parameter, if the wafer is used; wherein the second graphic size parameter is different from the first graphic size parameter.
The monitoring system according to the embodiment of the present application can implement the monitoring method according to the above embodiment, and the specific implementation principle thereof may be referred to the above description and will not be repeated herein.
The monitoring system does not need AFM data acquisition, acquires relative height difference information through an Interferometer (IFM), acquires the relative height difference information through an optical signal, and has the advantages of simpler operation, better data accuracy and shorter measurement time.
In the present specification, each embodiment is described in a progressive manner, or a parallel manner, or a combination of progressive and parallel manners, and each embodiment is mainly described as a difference from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other. For the monitoring system disclosed in the embodiment, since the monitoring system corresponds to the monitoring method disclosed in the embodiment, the description is simpler, and the relevant points are only needed to be referred to in the monitoring method part.
It should be noted that, in the description of the present application, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "top", "bottom", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the apparatus or element to be referred to must have a specific direction, be configured and operated in the specific direction, and thus should not be construed as limiting the present application. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
It is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in an article or apparatus that comprises such element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A method of monitoring in a CMP process, the method comprising:
providing a first photomask having a first pattern; the first graph has a preset first graph size parameter;
etching one surface of the wafer based on the first photomask; the surface of the wafer with the etching pattern is a first surface;
after depositing a metal layer on the first surface, performing CMP treatment on the first surface for a plurality of times;
after finishing the last CMP treatment, acquiring first morphology information of the first surface;
and determining the association relation of the first morphology information and the first graph size parameter.
2. The method of monitoring of claim 1, wherein the method of obtaining the first topographical information comprises:
acquiring relative height difference information of different positions of the first surface and thickness information of different positions of the wafer in a first direction; the first direction is perpendicular to the wafer;
wherein the first topographical information includes the relative height difference information and the thickness information.
3. The method of monitoring according to claim 2, wherein the method of obtaining the relative height difference information comprises:
and scanning the first surface through an interferometer to obtain the relative height difference information.
4. The monitoring method according to claim 2, wherein the method of obtaining the thickness information comprises:
and measuring the cross section of the wafer by a scanning electron microscope or a transmission electron microscope to obtain the thickness information.
5. The method of monitoring according to claim 1, further comprising:
and based on the association relation, obtaining the correction parameters of the first graph size parameters.
6. The method of monitoring according to claim 1, further comprising:
predicting second morphological information corresponding to a second photomask with second graphic size parameters if the wafer adopts the second photomask based on the second graphic size parameters and the association relation;
wherein the second graphic size parameter is different from the first graphic size parameter.
7. A monitoring system in a CMP process, the monitoring system comprising:
etching equipment for etching one surface of the wafer based on a first photomask with a first pattern; the surface of the wafer with the etching pattern is a first surface; the first graph has a preset first graph size parameter;
a deposition apparatus for depositing a metal layer on the first surface;
a CMP apparatus for performing a plurality of CMP processes on the first surface;
the acquisition equipment is used for acquiring first morphology information of the first surface after finishing the last CMP treatment;
and the computing equipment is used for determining the association relation between the first morphology information and the first graph size parameter.
8. The monitoring system of claim 7, wherein the acquisition device comprises:
the interferometer is used for scanning the first surface to obtain relative height difference information of different positions of the first surface;
the SEM or TEM is used for measuring the cross section of the wafer to obtain thickness information of different positions of the wafer in the first direction; the first direction is perpendicular to the wafer;
wherein the first topographical information includes the relative height difference information and the thickness information.
9. The monitoring system of claim 7, wherein the computing device is further configured to obtain a collation parameter for the first graphic size parameter based on the association.
10. The monitoring system of claim 7, wherein the computing device is further configured to predict second topographical information for the wafer if a second mask having a second graphic size parameter is employed based on the second graphic size parameter and the association;
wherein the second graphic size parameter is different from the first graphic size parameter.
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