CN113285687B - Temperature compensation type film bulk acoustic resonator, forming method thereof and electronic equipment - Google Patents
Temperature compensation type film bulk acoustic resonator, forming method thereof and electronic equipment Download PDFInfo
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- CN113285687B CN113285687B CN202110247009.2A CN202110247009A CN113285687B CN 113285687 B CN113285687 B CN 113285687B CN 202110247009 A CN202110247009 A CN 202110247009A CN 113285687 B CN113285687 B CN 113285687B
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- 238000000034 method Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000010408 film Substances 0.000 claims description 54
- 239000010409 thin film Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 21
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 7
- 239000002210 silicon-based material Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 238000002955 isolation Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- YZYDPPZYDIRSJT-UHFFFAOYSA-K boron phosphate Chemical compound [B+3].[O-]P([O-])([O-])=O YZYDPPZYDIRSJT-UHFFFAOYSA-K 0.000 description 1
- 229910000149 boron phosphate Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a temperature compensation type film bulk acoustic resonator, a manufacturing method thereof and an electronic device. The film bulk acoustic resonator of the present invention includes: the piezoelectric device comprises a substrate, a first electrode, a second electrode, a piezoelectric film and a temperature compensation layer, wherein the temperature compensation layer is made of N-type or P-type doped silicon. Due to the N-type or P-type doped silicon material temperature compensation layer, the frequency temperature drift coefficient of the resonator is smaller, and the frequency stability is higher; since the acoustic loss of the material doped with N-type or P-type silicon is very low, the Q-value of the resonator is higher after temperature compensation than before compensation.
Description
Technical Field
The invention relates to the technical field of resonators, in particular to a temperature compensation type film bulk acoustic resonator, a forming method thereof and electronic equipment.
Background
After a temperature compensation layer of a traditional temperature compensation material such as silicon dioxide, polysilicon, boron phosphate glass (BSG), silicon oxide or tellurium oxide is added to the film bulk acoustic resonator, the temperature drift coefficient of the film bulk acoustic resonator generally becomes small, the frequency stability becomes good, but the quality factor Q value is reduced, and the electrical performance becomes poor. There is a need to find a thin film bulk acoustic resonator and a method of manufacturing the same that can balance the temperature drift coefficient and the quality factor.
Disclosure of Invention
In view of the above, the present invention provides a temperature compensation type thin film bulk acoustic resonator capable of balancing a temperature drift coefficient and a quality factor, a method for manufacturing the same, and an electronic device including the thin film bulk acoustic resonator.
A first aspect of the present invention provides a temperature compensation type thin film bulk acoustic resonator, which may include: the piezoelectric device comprises a substrate, a first electrode, a second electrode, a piezoelectric film and a temperature compensation layer, wherein the temperature compensation layer is made of N-type or P-type doped silicon.
Optionally, the temperature compensation layer is doped monocrystalline silicon.
Optionally, the doping concentration of the temperature compensation layer is greater than 10 19 /cm 3 。
Optionally, the temperature compensation layer has a resistivity of less than 5m Ω · cm.
Optionally, the thickness of the temperature compensation layer is 0.1 to 10 microns.
Optionally, the resonant mode of the film bulk acoustic resonator is a thickness stretching mode, and the piezoelectric film is aluminum nitride or doped aluminum nitride.
Optionally, the resonant frequency ranges from 100MHz to 30GHz.
Optionally, when the resonator is used in a filter, the temperature compensation layer is used for adjusting a first-order frequency temperature drift coefficient of the resonator; when the resonator is used for an oscillator, the temperature compensation layer is used for adjusting the second-order frequency temperature drift coefficient of the resonator or adjusting the first-order and second-order frequency temperature drift coefficients of the resonator simultaneously.
Optionally, the substrate supports the temperature compensation layer, and the temperature compensation layer has the first electrode, the piezoelectric film, and the second electrode stacked in this order thereon.
Optionally, the substrate has a support layer thereon, a top surface of the support layer has an air cavity, the support layer has the temperature compensation layer, the piezoelectric film and the second electrode stacked in sequence thereon, and the first electrode is located below the temperature compensation layer and inside the air cavity.
Optionally, the substrate supports the temperature compensation layer, the piezoelectric film and the second electrode are stacked in sequence on the temperature compensation layer, and the first electrode is located below the temperature compensation layer.
Optionally, the first electrode and the second electrode are of a symmetrical structure.
Optionally, a support layer is provided on the substrate, a top surface of the support layer is provided with an air cavity, and the support layer is provided with the temperature compensation layer, the first electrode, the piezoelectric film and the second electrode which are stacked in sequence.
A second aspect of the present invention provides a method for forming a temperature compensation type thin film bulk acoustic resonator, which may include: forming a temperature compensation layer over a substrate; forming a first electrode over the temperature compensation layer; forming a piezoelectric thin film over the first electrode; forming a second electrode over the piezoelectric film; sequentially forming a temporary bonding layer on the second electrode; forming a temporary substrate over the temporary bonding layer; inverting the current semiconductor structure, and etching the substrate to form an air cavity; and reversing the current semiconductor structure, and removing the temporary bonding layer and the temporary substrate.
A third aspect of the present invention provides a method for forming a temperature compensation type thin film bulk acoustic resonator, which may include: forming a temperature compensation layer over the sacrificial substrate; forming a first electrode over the temperature compensation layer; forming a sacrificial structure over the first electrode; forming a support layer over the sacrificial structure; forming a package base layer over the support layer; inverting the current semiconductor structure and removing the sacrificial substrate; forming a second electrode over the temperature compensation layer; and removing the sacrificial structure.
A fourth aspect of the present invention provides a method for forming a temperature compensation type thin film bulk acoustic resonator, which may include: forming a temperature compensation layer over a substrate; forming a piezoelectric film on a first side of the temperature compensation layer; forming a second electrode over the piezoelectric film; inverting the current semiconductor structure, and etching the substrate to form an air cavity; forming a first electrode on a second side of the temperature compensation layer; the current semiconductor structure is inverted.
Optionally, the first electrode and the second electrode are of a symmetrical structure.
A fifth aspect of the present invention provides a method for forming a temperature compensation type thin film bulk acoustic resonator, including: forming a packaging substrate layer with a cavity and a temperature compensation layer; forming a first electrode on the temperature compensation layer and at a position corresponding to the cavity; forming a piezoelectric layer over the electrode and the temperature compensation layer; a second electrode is formed on the piezoelectric layer at a position corresponding to the first electrode.
A sixth aspect of the present invention provides an electronic device, which may include the temperature compensation type thin film bulk acoustic resonator of the present invention.
According to the technical scheme of the invention, the temperature compensation layer of the N-type or P-type doped silicon material is adopted in the resonator. The temperature compensation layer of the N-type or P-type doped silicon material is arranged, so that the frequency temperature drift coefficient of the resonator is smaller, and the frequency stability is higher; since the acoustic loss of silicon is very low, especially the loss of monocrystalline silicon is far lower than that of polycrystalline silicon, the quality factor Q value of the resonator is higher after temperature compensation than before compensation, so that the temperature stability and the Q value of the resonator can be improved at the same time.
Drawings
For purposes of illustration and not limitation, the present invention will now be described in accordance with its preferred embodiments, particularly with reference to the accompanying drawings, in which:
fig. 1a to 1g are schematic diagrams illustrating a process of manufacturing a film bulk acoustic resonator according to a first embodiment of the present invention;
fig. 2a to fig. 2e are schematic diagrams illustrating a manufacturing process of a film bulk acoustic resonator according to a second embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a film bulk acoustic resonator according to a third embodiment of the present invention;
fig. 4 is a schematic cross-sectional view of a film bulk acoustic resonator according to a fourth embodiment of the present invention;
fig. 5 is a schematic cross-sectional view of a film bulk acoustic resonator according to a fifth embodiment of the present invention.
Detailed Description
The film bulk acoustic resonator of the embodiment of the invention comprises: the piezoelectric ceramic comprises a substrate, a first electrode, a second electrode, a piezoelectric film and a temperature compensation layer, wherein the temperature compensation layer is made of N-type or P-type doped silicon. The temperature compensation layer of the N-type or P-type doped silicon material is arranged, so that the frequency temperature drift coefficient of the resonator is smaller, and the frequency stability is higher; since the acoustic loss of the material doped with N-type or P-type silicon is very low, the quality factor Q of the resonator is higher after temperature compensation than before compensation.
After the structure and the thickness of the resonator structure (the electrode and the piezoelectric layer) are determined, the frequency temperature drift coefficient of the resonator structure is determined by the thickness and the doping concentration of the doped silicon temperature compensation layer, and the frequency temperature drift coefficient of the resonator is adjusted by adjusting the thickness and the doping concentration of the doped silicon temperature compensation layer, so that the absolute value of the resonator structure is smaller and is closer to 0. When the resonator is used for a filter, the doped silicon temperature compensation layer is mainly used for adjusting the first-order frequency temperature drift coefficient of the resonator; when the resonator is used for an oscillator, the doped silicon temperature compensation layer is mainly used for adjusting the second-order frequency temperature drift coefficient of the resonator or simultaneously adjusting the first-order and second-order frequency temperature drift coefficients of the resonator.
On the other hand, because the resonance mode of the film bulk acoustic resonator is a thickness expansion mode, the temperature compensation effect of the doped silicon is only sensitive to the crystal orientation of the doped silicon in the thickness direction of the resonator, and is not sensitive to the crystal orientation of the doped silicon in the plane of the resonator, so that the stability of the compensation method is high, and the temperature compensation effect of the compensation method is not influenced by the crystal orientation fluctuation of the doped silicon in the plane of the resonator.
The film bulk acoustic resonator of the embodiment of the invention has a resonance frequency range of 100MHz to 30GHz.
The details of the parts marked in the figures are described below.
10: the substrate can be selected from monocrystalline silicon, gallium arsenide, sapphire, quartz, lithium niobate and the like.
15: the isolating layer can be made of silicon dioxide, polysilicon and the like. The isolation layer is an optional structure, namely the thin film bulk acoustic resonator can be provided with no isolation layer.
20: the acoustic mirror can be an air cavity, and a Bragg reflection layer or other equivalent acoustic reflection structures can also be adopted.
30/50: the first electrode/the second electrode can be selected from molybdenum, platinum, gold, aluminum or the compound of the above metals or the alloy thereof.
40: and the piezoelectric layer film can be selected from aluminum nitride or doped aluminum nitride.
60: temperature compensation layer: the N-type or P-type doped silicon can be doped monocrystalline silicon. The slag doping element can be selected from phosphorus (P), arsenic (As), antimony (Sb) and other elements, and the doping concentration is more than 10 19 /cm 3 . The thickness of the temperature compensation layer is about 0.1 to 10 microns.
70: and (4) a support layer. Silicon dioxide, polysilicon and other materials can be selected, and the materials need different sacrificial layers.
80: the packaging substrate layer can be made of materials such as silicon, glass and quartz.
91: and the temporary bonding layer can be made of silicon dioxide, silicon, high polymer and the like.
92: the temporary substrate layer can be made of silicon, glass, quartz and the like.
93: the sacrificial substrate can be selected from monocrystalline silicon, gallium arsenide, sapphire, quartz, lithium niobate and the like.
94: sacrificial structure, selected from silicon dioxide, PSG, high polymer, etc
Fig. 1a to 1g are schematic diagrams illustrating a manufacturing process of a film bulk acoustic resonator according to a first embodiment of the present invention.
As shown in fig. 1a, a substrate 10 with a release layer 15 is provided. A temperature compensation layer 60 is formed over the isolation layer 15. The temperature compensation layer 60 is made of N-type or P-type doped silicon with a doping concentration greater than 10 19 /cm 3 (19 th power of 10 per cubic centimeter) and the resistivity of doped silicon is less than 5m Ω · cm.
As shown in fig. 1b, a first electrode material is deposited, and a patterned first electrode 30 is formed by photolithography and etching.
As shown in fig. 1c, a piezoelectric film 40 is deposited.
As shown in fig. 1d, a second electrode material is deposited, and a patterned second electrode 50 is formed by photolithography and etching.
As shown in fig. 1e, a temporary bonding layer 81 is deposited and a temporary base layer 82 is formed thereon.
As shown in fig. 1f, the wafer is inverted, and the substrate 10 and the isolation layer 15 are etched by photolithography to form a cavity as an acoustic mirror.
Finally, the wafer is inverted and the temporary bonding layer 81 and the temporary substrate 82 are removed, as shown in fig. 1g, so as to obtain the film bulk acoustic resonator with the temperature compensation layer according to the first embodiment of the present invention.
Fig. 2a to fig. 2e are schematic diagrams illustrating a manufacturing process of a film bulk acoustic resonator according to a second embodiment of the present invention.
As shown in fig. 2a, the temperature compensation layer 60 and the first electrode 30 are sequentially formed on a sacrificial substrate 93 with an isolation layer 15, and then a sacrificial structure 94 is formed over the first electrode 30.
As shown in fig. 2b, a support layer 70 is deposited over the sacrificial structure 94.
As shown in fig. 2c, the support layer 70 is ground flat and then the encapsulation base layer 80 is applied over the support layer 70.
The wafer is flipped over and the isolation layer 15 and the sacrificial substrate 93 are removed, as shown in figure 2 d.
As shown in fig. 2e, the piezoelectric film 40 is deposited on the temperature compensation layer 60, then the second electrode material is deposited to form the patterned second electrode 50 by photolithography and etching, and finally the sacrificial structure 94 is removed. Thus, a film bulk acoustic resonator having a temperature compensation layer according to a second embodiment of the present invention is obtained.
Fig. 3 is a schematic cross-sectional view of a film bulk acoustic resonator according to a third embodiment of the present invention. As shown, the temperature compensation layer 60 is located between the piezoelectric film 40 and the electrode layer. Since the temperature compensation layer 60 is closer to the piezoelectric layer 40, the temperature compensation effect is better. The manufacturing method of the film bulk acoustic resonator is approximately as follows: forming a temperature compensation layer 60 on the substrate 10 with the isolation layer 15, then sequentially forming a piezoelectric layer 40 and a second electrode 50 on the temperature compensation layer 60, then performing a first inversion, etching the substrate 10 and the isolation layer 15, forming a cavity, depositing a first electrode 30, and finally performing a second inversion.
Fig. 4 is a schematic cross-sectional view of a film bulk acoustic resonator according to a fourth embodiment of the present invention. In the fourth embodiment, on the basis of the third embodiment, the first electrode 30 and the second electrode 50 of the resonator form a symmetrical structure, so that the parasitic mode of the resonator can be suppressed, and the performance of the resonator is effectively improved.
Fig. 5 is a schematic cross-sectional view of a film bulk acoustic resonator according to a fifth embodiment of the present invention. The temperature compensation layer 60 in this embodiment is located below the first electrode layer 30. The manufacturing method of the film bulk acoustic resonator is approximately as follows: first forming a package substrate layer 80 with a cavity 20 and a temperature compensation layer 60, such as a cavity-type SOI; and then the first electrode 30, the piezoelectric layer 40 and the second electrode 50 are sequentially formed thereon.
The electronic device of the embodiment of the invention comprises any film bulk acoustic resonator disclosed by the invention.
According to the technical scheme of the embodiment of the invention, the temperature compensation layer of the N-type or P-type doped silicon material is adopted in the resonator. Due to the temperature compensation layer of the doped silicon material, the frequency temperature drift coefficient of the resonator is smaller, and the frequency stability is higher; since the acoustic loss of the material doped with N-type or P-type silicon is very low, the quality factor Q of the resonator is higher after temperature compensation than before compensation.
The above-described embodiments should not be construed as limiting the scope of the invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions can occur, depending on design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (18)
1. A temperature-compensated film bulk acoustic resonator, comprising: the piezoelectric ceramic comprises a substrate, a first electrode, a second electrode, a piezoelectric film and a temperature compensation layer, wherein the temperature compensation layer is made of N-type or P-type doped silicon,
when the resonator is used for a filter, the temperature compensation layer is used for adjusting a first-order frequency temperature drift coefficient of the resonator; when the resonator is used for an oscillator, the temperature compensation layer is used for adjusting the second-order frequency temperature drift coefficient of the resonator or adjusting the first-order and second-order frequency temperature drift coefficients of the resonator simultaneously.
2. The film bulk acoustic resonator of claim 1, wherein the temperature compensation layer is doped single crystal silicon.
3. The film bulk acoustic resonator of claim 1, wherein the temperature compensation layer has a doping concentration greater than 10 19 /cm 3 。
4. The film bulk acoustic resonator of claim 1, wherein the temperature compensation layer has a resistivity of less than 5m Ω -cm.
5. The film bulk acoustic resonator of claim 1, wherein the temperature compensation layer has a thickness of 0.1 to 10 microns.
6. The thin film bulk acoustic resonator according to claim 1, wherein the resonance mode of the thin film bulk acoustic resonator is a thickness extensional mode, and the piezoelectric thin film is aluminum nitride or doped aluminum nitride.
7. The film bulk acoustic resonator of claim 1, wherein the resonant frequency is in a range of 100MHz to 30GHz.
8. The thin film bulk acoustic resonator according to any one of claims 1 to 7, wherein the substrate supports the temperature compensation layer having the first electrode, the piezoelectric thin film, and the second electrode stacked in this order thereon.
9. The thin film bulk acoustic resonator according to any one of claims 1 to 7, wherein the substrate has thereon a support layer, a top surface of the support layer having an air cavity, the support layer having thereon the temperature compensation layer, the piezoelectric film and the second electrode stacked in this order, the first electrode being located below the temperature compensation layer and inside the air cavity.
10. The thin film bulk acoustic resonator according to any one of claims 1 to 7, wherein the substrate supports the temperature compensation layer having the piezoelectric thin film and the second electrode stacked in this order thereon, the first electrode being located below the temperature compensation layer.
11. The film bulk acoustic resonator of claim 10, wherein the first electrode and the second electrode are of a symmetrical structure.
12. The thin film bulk acoustic resonator according to any one of claims 1 to 7, wherein a support layer is provided on the substrate, a top surface of the support layer has an air cavity, and the temperature compensation layer, the first electrode, the piezoelectric film, and the second electrode are sequentially stacked on the support layer.
13. A method for forming a temperature compensation type film bulk acoustic resonator is characterized by comprising the following steps:
forming a temperature compensation layer over a substrate;
forming a first electrode over the temperature compensation layer;
forming a piezoelectric thin film over the first electrode;
forming a second electrode over the piezoelectric film;
sequentially forming temporary bonding layers on the second electrodes;
forming a temporary substrate over the temporary bonding layer;
inverting the current semiconductor structure, and etching the substrate to form an air cavity;
inverting the current semiconductor structure, removing the temporary bonding layer and temporary substrate,
when the resonator is used for a filter, the temperature compensation layer is used for adjusting a first-order frequency temperature drift coefficient of the resonator; when the resonator is used for an oscillator, the temperature compensation layer is used for adjusting the second-order frequency temperature drift coefficient of the resonator or adjusting the first-order and second-order frequency temperature drift coefficients of the resonator simultaneously.
14. A method for forming a temperature compensation type film bulk acoustic resonator is characterized by comprising the following steps:
forming a temperature compensation layer over the sacrificial substrate;
forming a first electrode over the temperature compensation layer;
forming a sacrificial structure over the first electrode;
forming a support layer over the sacrificial structure;
forming a package base layer over the support layer;
inverting the current semiconductor structure and removing the sacrificial substrate;
forming a second electrode over the temperature compensation layer;
the sacrificial structure is removed and the sacrificial structure is removed,
when the resonator is used for a filter, the temperature compensation layer is used for adjusting a first-order frequency temperature drift coefficient of the resonator; when the resonator is used for an oscillator, the temperature compensation layer is used for adjusting the second-order frequency temperature drift coefficient of the resonator or adjusting the first-order and second-order frequency temperature drift coefficients of the resonator simultaneously.
15. A method for forming a temperature compensation type film bulk acoustic resonator is characterized by comprising the following steps:
forming a temperature compensation layer over a substrate;
forming a piezoelectric film on a first side of the temperature compensation layer;
forming a second electrode over the piezoelectric film;
inverting the current semiconductor structure, and etching the substrate to form an air cavity;
forming a first electrode on a second side of the temperature compensation layer;
the current semiconductor structure is reversed,
when the resonator is used for a filter, the temperature compensation layer is used for adjusting a first-order frequency temperature drift coefficient of the resonator; when the resonator is used for an oscillator, the temperature compensation layer is used for adjusting the second-order frequency temperature drift coefficient of the resonator or simultaneously adjusting the first-order and second-order frequency temperature drift coefficients of the resonator.
16. The method of claim 15, wherein the first electrode and the second electrode are symmetrical structures.
17. A method for forming a temperature compensation type film bulk acoustic resonator is characterized by comprising the following steps:
forming a packaging substrate layer with a cavity and a temperature compensation layer;
forming a first electrode on the temperature compensation layer and at a position corresponding to the cavity;
forming a piezoelectric layer over the electrode and the temperature compensation layer;
forming a second electrode on the piezoelectric layer at a position corresponding to the first electrode,
when the resonator is used for a filter, the temperature compensation layer is used for adjusting a first-order frequency temperature drift coefficient of the resonator; when the resonator is used for an oscillator, the temperature compensation layer is used for adjusting the second-order frequency temperature drift coefficient of the resonator or simultaneously adjusting the first-order and second-order frequency temperature drift coefficients of the resonator.
18. An electronic device comprising the temperature compensation type thin film bulk acoustic resonator according to any one of claims 1 to 12.
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| CN202110247009.2A CN113285687B (en) | 2021-03-05 | 2021-03-05 | Temperature compensation type film bulk acoustic resonator, forming method thereof and electronic equipment |
| PCT/CN2021/084616 WO2022183559A1 (en) | 2021-03-05 | 2021-03-31 | Temperature-compensated film bulk acoustic resonator and method for forming same, and electronic device |
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| CN117955446A (en) * | 2022-10-21 | 2024-04-30 | 广州乐仪投资有限公司 | Preparation method of semiconductor structure, semiconductor structure and electronic equipment |
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