CN113178498A - Deep ultraviolet detector and preparation method thereof - Google Patents

Deep ultraviolet detector and preparation method thereof Download PDF

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CN113178498A
CN113178498A CN202110488986.1A CN202110488986A CN113178498A CN 113178498 A CN113178498 A CN 113178498A CN 202110488986 A CN202110488986 A CN 202110488986A CN 113178498 A CN113178498 A CN 113178498A
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deep ultraviolet
ultraviolet detector
aluminum nitride
polycrystalline aluminum
substrate
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刘可为
张培宣
朱勇学
艾秋
李炳辉
申德振
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
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Abstract

The invention relates to a deep ultraviolet detector and a preparation method thereof. The deep ultraviolet detector includes: the polycrystalline aluminum nitride thin film layer is arranged on the substrate. The preparation method comprises the following steps: growing a polycrystalline aluminum nitride film on a substrate by using an aluminum source and a nitrogen source through a molecular beam epitaxy method, preparing an electrode layer on the surface of the polycrystalline aluminum nitride film, and pressing indium grains on the electrode layer. The deep ultraviolet detector has the advantages of high quantum efficiency, high photoresponse speed and low dark current. The preparation method of the deep ultraviolet detector has simple preparation process, is convenient to operate and is easy for large-scale industrial application.

Description

Deep ultraviolet detector and preparation method thereof
Technical Field
The invention belongs to the technical field of semiconductor detection, and particularly relates to a deep ultraviolet detector and a preparation method thereof.
Background
The deep ultraviolet photoelectric detector can detect deep ultraviolet signals under the sunlight environment condition because of not being interfered by sunlight, thereby having very important application in the fields of military affairs, national defense and scientific research. The current commercial deep ultraviolet detector mainly comprises a silicon detector, a photomultiplier and a semiconductor detector. The silicon-based deep ultraviolet phototube needs an optical filter, and the photomultiplier needs to work under high pressure, and has the advantages of large volume, low efficiency and easy damage. Compared with the traditional deep ultraviolet detector, the semiconductor material has the advantages of convenience in carrying, low manufacturing cost, high responsivity and the like, and is widely concerned.
The III group nitride (mainly comprising gallium nitride, aluminum nitride, indium nitride and alloy thereof) has the characteristics of a direct band gap energy band structure, high electronic drift saturation velocity, small dielectric constant, good thermal conductivity and the like, and is considered as an ideal material for preparing photoelectric devices for a long time. In all the existing semiconductor materials, aluminum nitride has a direct energy band gap of more than 6eV, has high breakdown field strength, high thermal conductivity, high chemical and thermal stability and good optical and mechanical properties, can be used for researching deep ultraviolet light sources and detectors with the wavelength of 200nm, and therefore has wide application prospects in military and civil fields and irreplaceable advantages in certain extreme applications. The aluminum nitride has wide application prospect in the fields of photoelectric detectors and the like. However, the preparation of the high-quality aluminum nitride film is difficult, so that the high-performance aluminum nitride detector is difficult to break through, and the photoelectric device of the aluminum nitride film is in the initial stage of research and development, so that the preparation of the high-performance aluminum nitride detector has important significance for preparing the photoelectric device.
Disclosure of Invention
The invention aims to provide a deep ultraviolet detector aiming at the defects of the prior art. The deep ultraviolet detector has the characteristics of high photoresponse speed and steep cut-off edge.
The invention also aims to provide a method for preparing the deep ultraviolet detector. The preparation method has simple process, and is time-saving and efficient.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a deep ultraviolet detector comprising: the polycrystalline aluminum nitride thin film comprises a substrate, a polycrystalline aluminum nitride thin film layer arranged on the substrate and an electrode layer arranged on the polycrystalline aluminum nitride thin film layer.
Further, the polycrystalline aluminum nitride thin film layer is polycrystalline aluminum nitride with C-axis orientation; the light response cut-off edge of the deep ultraviolet detector is 200-250 nm, and the response speed of the deep ultraviolet detector is 10-100 mu s.
Further, the substrate is made of sapphire, a silicon wafer with a silicon dioxide layer covered on the surface, or glass.
Furthermore, the thickness of the polycrystalline aluminum nitride thin film layer is 100-500 nm, and the absorption cut-off edge is 190-230 nm.
Furthermore, the electrode layer is a discontinuous electrode layer, and the thickness of the electrode layer is 30-100 nm.
Further, the discontinuous electrode layer is an interdigital electrode, a nested ring electrode or a parallel square electrode.
Furthermore, the inter-finger distance of the inter-finger electrodes is 10 μm, the inter-finger width is 10 μm, the number of pairs of inter-fingers is 25, and the inter-finger length is 500 μm; the interdigital electrode is made of gold.
A method of deep ultraviolet detector comprising the steps of:
s1, cleaning and drying the substrate;
s2, growing a polycrystalline aluminum nitride film in the molecular beam epitaxial growth chamber by using an aluminum source and a nitrogen gas source;
s3, preparing the electrode layer on the surface of the polycrystalline aluminum nitride film;
and S4, pressing indium particles on the electrode layer.
Furthermore, the purity of the aluminum source is 5N 5-8N 5, and the flow rate of the nitrogen gas is 0.5-5 sccm; the radio frequency power of the nitrogen is 100-400W; the current of the electron beam source furnace is 160-200 mA; the voltage of the electron beam source furnace is 4-6 kV; the growth temperature is 500-1000 ℃; the vacuum degree of growth is 1X 10-6～3×10-6Torr。
Further, after the polycrystalline aluminum nitride film is grown, the cooling rate is 1-15 ℃/min.
Further, in step S3, the electrode layer is prepared by using a method of etching after evaporation, the current of evaporation is 10 to 140mA, and the raw material of the electrode is 5 to 500 mg.
Furthermore, the etching method is to perform wet etching after photoetching.
Compared with the prior art, the invention has the following beneficial effects:
the deep ultraviolet detector has the advantages of high quantum efficiency, high photoresponse speed and low dark current. The preparation method of the deep ultraviolet detector has the advantages of simple preparation process, convenient operation and easy large-scale industrial application.
Drawings
Fig. 1 is a schematic structural diagram of a deep ultraviolet light detector according to the present invention;
FIG. 2 is a cross-sectional view of a scanning electron microscope showing a polycrystalline aluminum nitride film according to example 1 of the present invention;
FIG. 3 is a graph showing an ultraviolet-visible light absorption spectrum of a polycrystalline aluminum nitride thin film according to example 1 of the present invention;
FIG. 4 is a transient response spectrum of the deep ultraviolet detector in embodiment 1 of the present invention;
fig. 5 is a time response characteristic curve of the deep ultraviolet detector in example 1 of the present invention.
Wherein the reference numerals include:
the device comprises a substrate 1, a polycrystalline aluminum nitride thin film layer 2, a gold interdigital electrode layer 3 and indium grains 4.
Detailed Description
The embodiments of the present invention will be described in further detail with reference to the drawings and examples. It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention specifically discloses a deep ultraviolet detector, which comprises: the polycrystalline aluminum nitride thin film layer is arranged on the substrate.
Preferably, the polycrystalline aluminum nitride thin film layer is C-axis oriented polycrystalline aluminum nitride; the light response cut-off edge of the deep ultraviolet detector is 200-250 nm, and the response speed of the deep ultraviolet detector is 10-100 mu s.
Preferably, the thickness of the polycrystalline aluminum nitride thin film layer is 100-500 nm, and the absorption cut-off edge is 190-230 nm.
Preferably, the electrode layer is a discontinuous electrode layer and has a thickness of 30-100 nm.
Preferably, the discontinuous electrode layer is an interdigitated electrode, a nested ring electrode or a side-by-side square electrode.
Preferably, the material of the interdigital electrode is gold, the interdigital distance of the interdigital electrode is 10 μm, the interdigital width is 10 μm, the interdigital number is 25 pairs, and the interdigital length is 500 μm.
The invention also provides a preparation method of the deep ultraviolet detector.
Preparation method example 1
The preparation method of the deep ultraviolet detector comprises the following specific steps:
s1, adopting a sapphire substrate (a 2-inch wafer with the thickness of 0.45-0.55 mm), respectively cleaning the substrate by using trichloroethylene, acetone and ethanol, and drying the substrate by using nitrogen.
S2, placing the substrate into molecular beam epitaxial growth equipment, and preparing the polycrystalline aluminum nitride film by taking aluminum with the purity of 6N5 as an aluminum source and a nitrogen gas source.
S3, putting the substrate with the polycrystalline aluminum nitride grown in the step S2 into vacuum platingIn the film machine, the air pressure is 1 x 10-3And preparing the gold interdigital electrode layer under the condition of Pa.
S4, pressing indium particles on the gold interdigital electrode to obtain two indium electrodes with the distance of 1cm, wherein the prepared deep ultraviolet detector is of an MSM structure.
Preferably, the substrate in step S2 is placed in a molecular beam epitaxy apparatus, pretreated at 750 ℃ for 2 hours and then sent into a growth chamber, the growth temperature is 850 ℃, and the vacuum degree of the growth chamber is 1.6 × 10-6Torr, the flow rate of nitrogen gas was 1.2sccm, the radio frequency power of nitrogen gas was 350W, the voltage of the electron beam source furnace was 5kV, and the current of the electron beam source furnace was 185 mA.
Preferably, the substrate in step S2 is grown in the growth chamber for 90 minutes, the radio frequency gas source and the electron beam source furnace are turned off, the temperature is reduced at a cooling rate of 5 ℃/min, and finally, the substrate is taken out, so that the thickness of the polycrystalline aluminum nitride film obtained is 180 nm.
Preferably, a gold interdigital electrode layer is prepared by using an etching method after evaporation, the evaporation current is 140mA, 50mg of gold particles are evaporated on the surface of the polycrystalline aluminum nitride film, the interdigital distance and the interdigital width of the prepared gold interdigital electrode are 10 mu m, the interdigital length is 500 mu m, the interdigital number is 25 pairs, and the total area is 500X 1000 mu m2The area of the gold electrodes at the two ends is 1 multiplied by 1mm2。
The schematic structural diagram of the prepared deep ultraviolet detector is shown in fig. 1, and comprises the following components: the device comprises a sapphire substrate 1, a polycrystalline aluminum nitride thin film layer 2, a gold interdigital electrode layer 3 and indium grains 4; the section view of a scanning electron microscope of the prepared polycrystalline aluminum nitride film of the deep ultraviolet detector is shown in figure 2, and the ultraviolet-visible light absorption spectrum of the prepared polycrystalline aluminum nitride film of the deep ultraviolet detector is shown in figure 3, so that the light absorption cut-off edge of the polycrystalline aluminum nitride film is positioned near 200nm, which indicates that the prepared deep ultraviolet detector has better light response capability; the transient response spectrum of the prepared deep ultraviolet detector is shown in fig. 4, and it can be seen that the prepared aluminum nitride film is weak in conductivity, which shows that the prepared deep ultraviolet detector has the advantage of high photoresponse speed, and the time response characteristic curve of the prepared deep ultraviolet detector is shown in fig. 5, which shows that the prepared deep ultraviolet detector has the advantage of high photoresponse speed.
Preparation method example 2
The preparation method of the deep ultraviolet detector comprises the following specific steps:
s1, adopting a sapphire substrate (a 2-inch wafer with the thickness of 0.45-0.55 mm), respectively cleaning the substrate by using trichloroethylene, acetone and ethanol, and drying the substrate by using nitrogen.
S2, placing the substrate into molecular beam epitaxial growth equipment, and preparing the polycrystalline aluminum nitride film by taking aluminum with the purity of 6N5 as an aluminum source and a nitrogen gas source.
S3, placing the substrate with the polycrystalline aluminum nitride grown in the step S2 into a vacuum coating machine, wherein the air pressure is 1 × 10-3And preparing the gold interdigital electrode layer under the condition of Pa.
And S4, pressing indium particles on the gold interdigital electrodes to obtain the deep ultraviolet detector with the MSM structure.
Preferably, the substrate in step S2 is placed in a molecular beam epitaxy apparatus, pretreated at 750 ℃ for 2 hours and then sent into a growth chamber, the growth temperature is 850 ℃, and the vacuum degree of the growth chamber is 1.6 × 10-6Torr, the flow rate of nitrogen gas was 1.2sccm, the radio frequency power of nitrogen gas was 400W, the voltage of the electron beam source furnace was 5kV, and the current of the electron beam source furnace was 185 mA.
Preferably, the substrate in the step 2 grows in the growth chamber for 90 minutes, the radio frequency gas source and the electron beam source furnace are closed, the temperature is reduced at the cooling rate of 5 ℃/min, finally the temperature is reduced to the room temperature, and the substrate is taken out, so that the thickness of the polycrystalline aluminum nitride film is 200 nm.
Preferably, the gold interdigital electrode layer is prepared by using a method of etching after evaporation, the evaporation current is 140mA, and 50mg of gold particles are evaporated on the surface of the polycrystalline aluminum nitride film.
Preparation method example 3
The preparation method of the deep ultraviolet detector comprises the following specific steps:
s1, adopting a sapphire substrate (a 2-inch wafer with the thickness of 0.45-0.55 mm), respectively cleaning the substrate by using trichloroethylene, acetone and ethanol, and drying the substrate by using nitrogen.
S2, placing the substrate into molecular beam epitaxial growth equipment, and preparing the polycrystalline aluminum nitride film by taking aluminum with the purity of 6N5 as an aluminum source and a nitrogen gas source.
S3, placing the substrate with the polycrystalline aluminum nitride grown in the step S2 into a vacuum coating machine, wherein the air pressure is 1 × 10-3And preparing the gold interdigital electrode layer under the condition of Pa.
And S4, pressing indium particles on the gold interdigital electrodes to obtain the deep ultraviolet detector with the MSM structure.
Preferably, the substrate in step S2 is placed in a molecular beam epitaxy apparatus, pretreated at 750 ℃ for 2 hours and then sent into a growth chamber, the growth temperature is 850 ℃, and the vacuum degree of the growth chamber is 1.6 × 10-6Torr, the flow rate of nitrogen gas was 1.2sccm, the radio frequency power of nitrogen gas was 200W, the voltage of the electron beam source furnace was 5kV, and the current of the electron beam source furnace was 185 mA.
Preferably, the substrate in step S2 is grown in the growth chamber for 90 minutes, the radio frequency gas source and the electron beam source furnace are turned off, the temperature is reduced at a cooling rate of 5 ℃/min, and finally, the substrate is taken out, so that the thickness of the polycrystalline aluminum nitride film obtained is 150 nm.
Preferably, the gold interdigital electrode layer is prepared by using a method of etching after evaporation, the evaporation current is 140mA, and 50mg of gold particles are evaporated on the surface of the polycrystalline aluminum nitride film.
Preparation method example 4
The preparation method of the deep ultraviolet detector comprises the following specific steps:
s1, adopting a sapphire substrate (a 2-inch wafer with the thickness of 0.45-0.55 mm), respectively cleaning the substrate by using trichloroethylene, acetone and ethanol, and drying the substrate by using nitrogen.
S2, placing the substrate into molecular beam epitaxial growth equipment, and preparing the polycrystalline aluminum nitride film by taking aluminum with the purity of 6N5 as an aluminum source and a nitrogen gas source.
S3, placing the substrate with the polycrystalline aluminum nitride grown in the step S2 into a vacuum coating machine, wherein the air pressure is 1 × 10-3Preparing a gold square electrode layer under the condition of Pa, wherein the size of the square electrode is 1 multiplied by 1mm2The spacing between the electrodes was 1 mm.
And S4, pressing indium particles at two ends of the gold square electrode to obtain the deep ultraviolet detector with the MSM structure.
Preferably, the substrate in step S2 is placed in a molecular beam epitaxy apparatus, pretreated at 750 ℃ for 2 hours and then sent into a growth chamber, the growth temperature is 850 ℃, and the vacuum degree of the growth chamber is 1.6 × 10-6Torr, the flow rate of nitrogen gas was 1.2sccm, the radio frequency power of nitrogen gas was 200W, the voltage of the electron beam source furnace was 5kV, and the current of the electron beam source furnace was 185 mA.
Preferably, the substrate in step S2 is grown in the growth chamber for 90 minutes, the radio frequency gas source and the electron beam source furnace are turned off, the temperature is reduced at a cooling rate of 5 ℃/min, and finally, the substrate is taken out, so that the thickness of the polycrystalline aluminum nitride film obtained is 150 nm.
Preferably, a gold square electrode layer is prepared by using an etching method after evaporation, the evaporation current is 140mA, and 50mg of gold particles are evaporated on the surface of the polycrystalline aluminum nitride film.
The deep ultraviolet detector has the advantages of high quantum efficiency, high photoresponse speed and low dark current. The preparation method of the deep ultraviolet detector has the advantages of simple preparation process, convenient operation and easy large-scale industrial application.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it should be understood that the above embodiments are exemplary and should not be taken as limiting the invention. Variations, modifications, substitutions and alterations of the above-described embodiments may be made by those of ordinary skill in the art without departing from the scope of the present invention.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.

Claims (12)

1. A deep ultraviolet detector, comprising: the polycrystalline aluminum nitride thin film comprises a substrate, a polycrystalline aluminum nitride thin film layer arranged on the substrate and an electrode layer arranged on the polycrystalline aluminum nitride thin film layer.
2. The deep ultraviolet detector of claim 1, wherein the polycrystalline aluminum nitride thin film layer is C-axis oriented polycrystalline aluminum nitride; the light response cut-off edge of the deep ultraviolet detector is 200-250 nm, and the response speed of the deep ultraviolet detector is 10-100 mu s.
3. The deep ultraviolet detector according to claim 1, wherein the substrate is made of sapphire, a silicon wafer with a silicon dioxide layer covered on the surface, or glass.
4. The deep ultraviolet detector of claim 1, wherein the polycrystalline aluminum nitride thin film layer has a thickness of 100 to 500nm and an absorption cut-off edge of 190 to 230 nm.
5. The deep ultraviolet detector according to claim 1, wherein the electrode layer is a discontinuous electrode layer and has a thickness of 30 to 100 nm.
6. The deep ultraviolet detector of claim 5, wherein the discontinuous electrode layer is an interdigitated electrode, a nested ring electrode, or a side-by-side square electrode.
7. The deep ultraviolet detector according to claim 6, wherein the material of the interdigital electrodes is gold, the interdigital pitch of the interdigital electrodes is 10 μm, the interdigital width is 10 μm, the number of pairs of interdigital electrodes is 25, and the interdigital length is 500 μm.
8. The method for preparing the deep ultraviolet detector according to any one of claims 1 to 7, characterized by comprising the following steps:
s1, cleaning and drying the substrate;
s2, growing a polycrystalline aluminum nitride film in the molecular beam epitaxial growth chamber by using an aluminum source and a nitrogen gas source;
s3, preparing the electrode layer on the surface of the polycrystalline aluminum nitride film;
and S4, pressing indium particles on the electrode layer.
9. The method for preparing the deep ultraviolet detector as claimed in claim 8, wherein the purity of the aluminum source is 5N 5-8N 5, the flow rate of the nitrogen gas is 0.5-5 sccm; the radio frequency power of the nitrogen is 100-400W; the current of the electron beam source furnace is 160-200 mA; the voltage of the electron beam source furnace is 4-6 kV; the growth temperature is 500-1000 ℃; the vacuum degree of growth is 1X 10-6～3×10-6Torr。
10. The method for preparing the deep ultraviolet detector according to claim 8, wherein the cooling rate is 1-15 ℃/min after the polycrystalline aluminum nitride film is grown.
11. The method for manufacturing the deep ultraviolet detector according to claim 8, wherein in step S3, the electrode layer is manufactured by etching after evaporation, the current of evaporation is 10 to 140mA, and the raw material of the electrode is 5 to 500 mg.
12. The method for preparing the deep ultraviolet detector according to claim 11, wherein the etching is performed by photolithography and then wet etching.
CN202110488986.1A 2021-04-29 2021-04-29 Deep ultraviolet detector and preparation method thereof Pending CN113178498A (en)

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