CN113175991A - Detection device and method for realizing terahertz wave detection - Google Patents
Detection device and method for realizing terahertz wave detection Download PDFInfo
- Publication number
- CN113175991A CN113175991A CN202110298258.4A CN202110298258A CN113175991A CN 113175991 A CN113175991 A CN 113175991A CN 202110298258 A CN202110298258 A CN 202110298258A CN 113175991 A CN113175991 A CN 113175991A
- Authority
- CN
- China
- Prior art keywords
- metal electrode
- channel
- detection
- electromagnetic resonance
- positive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 144
- 238000000034 method Methods 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 112
- 239000002184 metal Substances 0.000 claims abstract description 112
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000523 sample Substances 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 238000013461 design Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 230000005672 electromagnetic field Effects 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- -1 tellurium bismuth compound Chemical class 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a detection device and a method for realizing terahertz wave detection, wherein the detection device comprises: two or more detection units forming an electromagnetic resonant array, the detection units comprising: the device comprises a channel, a positive metal electrode, a negative metal electrode and an electromagnetic resonance structure; the positive metal electrode and the negative metal electrode are in ohmic contact with two ends of the channel and are only electrically connected through the channel; the electromagnetic resonance structure is used for generating electromagnetic resonance. The embodiment of the invention realizes the array arrangement design of the detection units based on more than two detection units forming the electromagnetic resonance array, and improves the sensitivity of terahertz wave detection through the detection units arranged in the array.
Description
Technical Field
The present disclosure relates to, but not limited to, electromagnetic wave technology, and more particularly, to a detection arrangement and method for implementing terahertz wave detection.
Background
The terahertz wave is a general term for electromagnetic waves of a specific waveband, generally refers to electromagnetic waves with oscillation frequency between 0.1 terahertz (THz) and 10THz, has the characteristics of good penetrating performance, low photon energy, rich spectrum information and the like, and has important application value in the fields of public safety, spectrum detection, communication and the like. To realize these applications, efficient and reliable terahertz detection means are indispensable. The terahertz detection method based on the photothermal effect has the advantages of being capable of working at room temperature, wide in response frequency band, good in stability, easy to integrate in an array and the like, and is one of the closest terahertz detection technologies to commercial application.
The photo-thermoelectric effect belongs to one of the thermoelectric effects; terahertz waves irradiate one end of a channel material, a temperature field with gradient distribution is generated in the channel, and carriers in the channel are driven to move, so that photocurrent is generated. The detection method is only used for detecting the single-pixel terahertz wave at present, and the terahertz wave cannot be efficiently irradiated to different channels respectively, so that the method is difficult to be used for realizing array-type terahertz wave detection. In addition, the structure of the related art terahertz antenna such as a sector antenna is generally in a two-dimensional plane, and accordingly, the distribution of the detection channel and the temperature field is also spread along the horizontal direction, which is not favorable for heat concentration and array integration of the detection device.
In order to realize the detection of the arrayed terahertz waves, meet the requirements of real-time and room-temperature imaging of the terahertz waves and promote the practical development of the terahertz technology, a terahertz detection device which is high in sensitivity and easy to integrate is designed to become a requirement.
Disclosure of Invention
The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.
The embodiment of the invention provides a detection setting and a method for realizing terahertz wave detection, which can improve the sensitivity of terahertz wave detection.
An embodiment of the present invention provides a detection apparatus, including: two or more detection units forming an electromagnetic resonant array, the detection units comprising: the device comprises a channel (1-1), a positive metal electrode (1-2), a negative metal electrode (1-3) and an electromagnetic resonance structure (1-4); wherein the content of the first and second substances,
the positive metal electrode (1-2) and the negative metal electrode (1-3) are in ohmic contact with two ends of the channel (1-1) and are only electrically connected through the channel (1-1);
the electromagnetic resonance structure (1-4) is used for generating electromagnetic resonance.
In an illustrative example, the positive metal electrode (1-2) or the negative metal electrode (1-3) is connected to the electromagnetic resonance structure (1-4).
In an exemplary instance, the detection unit further includes:
and the substrate (1-5) is used for arranging the channel (1-1), the positive metal electrode (1-2), the negative metal electrode (1-3) and the electromagnetic resonance structure (1-4).
In an exemplary instance, the detection unit further includes:
a positive electrode lead-out wire (1-6) connected with the positive metal electrode (1-2), and a negative electrode lead-out wire (1-7) connected with the negative metal electrode (1-3).
In an exemplary embodiment, the size of the detection unit (1) is of the order of sub-wavelength.
In an illustrative example, the channels (1-1) are laid out in a plane or in a longitudinal direction.
In an illustrative example, the channel (1-1) is a rectangular parallelepiped when developed along a plane;
the channel (1-1) is a cylinder when unfolded along the longitudinal direction.
In an illustrative example, the dimensions of the channel (1-1) are determined by information including the thermal diffusion length.
In one illustrative example, the channels (1-1) are arranged such that:
receiving terahertz waves to be detected irradiated according to a preset angle;
the positive metal electrode (1-2) and the negative metal electrode (1-3) are arranged as follows: outputting an electric signal generated when the terahertz wave to be detected irradiates the channel (1-1);
wherein the electrical signal is proportional to the intensity of the terahertz wave.
On the other hand, an embodiment of the present invention further provides a method for implementing terahertz wave detection, including:
irradiating the terahertz wave to be detected to channels of more than two detection units of a preset detection device according to a preset angle;
reading an electric signal generated by irradiating a channel of the detection unit with the terahertz wave to be detected from a positive metal electrode and a negative metal electrode of the detection unit;
determining the intensity information of the terahertz waves according to the read electric signals;
wherein, two or more detection units in the detection device constitute an electromagnetic resonance array, and the detection unit comprises: the device comprises a channel, a positive metal electrode, a negative metal electrode and an electromagnetic resonance structure; the positive metal electrode and the negative metal electrode are in ohmic contact with two ends of the channel and are only electrically connected through the channel; the electromagnetic resonance structure is used for generating electromagnetic resonance.
In one illustrative example, the electrical signal comprises:
a voltage signal or a current signal.
The detection device of the embodiment of the invention comprises: two or more detection units forming an electromagnetic resonant array, the detection units comprising: the device comprises a channel, a positive metal electrode, a negative metal electrode and an electromagnetic resonance structure; the positive metal electrode and the negative metal electrode are in ohmic contact with two ends of the channel and are only electrically connected through the channel; the electromagnetic resonance structure is used for generating electromagnetic resonance. The embodiment of the invention realizes the array arrangement design of the detection units based on more than two detection units forming the electromagnetic resonance array, and improves the sensitivity of terahertz wave detection through the detection units arranged in the array.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention.
FIG. 1 is a block diagram of a detecting device according to an embodiment of the present invention;
FIG. 2 is a flowchart of a method for implementing terahertz wave detection according to an embodiment of the present invention;
FIG. 3 is a schematic bottom view of an exemplary probing unit embodying the present invention;
FIG. 4 is a diagram illustrating an electric field distribution of the detecting device in an operation state of the present application example;
FIG. 5 is a schematic view of another detecting device according to an exemplary embodiment of the present invention;
FIG. 6 is a schematic diagram of another detecting unit according to an exemplary embodiment of the present invention;
FIG. 7 is a schematic cross-sectional view of another exemplary detection unit;
fig. 8 is a diagram illustrating an electric field distribution of another detecting device in an operating state of the present application example.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
The steps illustrated in the flow charts of the figures may be performed in a computer system such as a set of computer-executable instructions. Also, while a logical order is shown in the flow diagrams, in some cases, the steps shown or described may be performed in an order different than here.
Fig. 1 is a block diagram of a detecting apparatus according to an embodiment of the present invention, as shown in fig. 1, including: two or more detection units 1 constituting an electromagnetic resonance array, the detection unit 1 (the right side of fig. 1 is a partially enlarged schematic view of the detection unit 1) comprising: the device comprises a channel 1-1, a positive metal electrode 1-2, a negative metal electrode 1-3 and an electromagnetic resonance structure 1-4; wherein the content of the first and second substances,
the positive metal electrode 1-2 and the negative metal electrode 1-3 are in ohmic contact with two ends of the channel 1-1 and are only electrically connected through the channel 1-1;
the electromagnetic resonance structure 1-4 is used to generate electromagnetic resonance.
In an illustrative example, the positive metal electrode 1-2 or the negative metal electrode 1-3 of the embodiment of the present invention is connected to the electromagnetic resonance structure 1-4.
It should be noted that the electromagnetic resonance structure 1-4 may not be connected to the positive metal electrode 1-2 or the negative metal electrode 1-3, and the electromagnetic resonance structure 1-4 may be implemented by those skilled in the art according to the related design, as long as the electromagnetic resonance can be generated.
The channel 1-1 of the embodiment of the invention is used for converting electromagnetic energy contained in incident terahertz waves into an electric signal convenient for detection, and the material of the channel can comprise: the tellurium bismuth compound and other thermoelectric materials can also be new two-dimensional materials such as graphene and other novel conductive film materials such as 3, 4-ethylene dioxythiophene monomer Polymer (PEDOT). The positive metal electrode 1-2 and the negative metal electrode 1-3 are used to apply a bias voltage, a gate control voltage, or to direct an electrical signal generated by the channel 1-1 to an electrical detection instrument for measurement. The materials of the positive metal electrode 1-2 and the negative metal electrode 1-3 may include, but are not limited to, metal conductive materials such as gold, silver, copper, aluminum, titanium, etc., and may also include emerging conductive materials such as Indium Tin Oxide (ITO), carbon nanotubes, etc. The detection unit 1 modulates incident terahertz waves, so that local field enhancement is formed in the detection device, absorbed terahertz waves are converted into heat energy, local hot spots are generated, and a temperature field with gradient distribution is formed in the channel 1-1. The material of the detection unit is not limited, and the detection unit can be a conductive metal material or a dielectric material, and can be designed into some shapes by the experience of a person skilled in the art, and electromagnetic resonance is generated by depending on the electromagnetic properties of the shapes and the materials.
Two or more detection units forming an electromagnetic resonant array, the detection units comprising: the device comprises a channel, a positive metal electrode, a negative metal electrode and an electromagnetic resonance structure; the positive metal electrode and the negative metal electrode are in ohmic contact with two ends of the channel and are only electrically connected through the channel; the positive metal electrode or the negative metal electrode is connected with the electromagnetic resonance structure. The embodiment of the invention realizes the array arrangement design of the detection units based on more than two detection units forming the electromagnetic resonance array, and improves the sensitivity of terahertz wave detection through the detection units arranged in the array.
The detection unit provided by the embodiment of the invention is an artificial electromagnetic microstructure, is a manually designed sub-wavelength structure, has an electromagnetic resonance function, and can be used for realizing electromagnetic wave regulation and control.
In an exemplary embodiment, the size of the detection unit 1 implemented by the present invention is in the order of sub-wavelength.
In an exemplary embodiment, the detection unit of the embodiment of the present invention further includes: a substrate 1-5 for disposing a channel 1-1, a positive metal electrode 1-2, a negative metal electrode 1-3, and an electromagnetic resonance structure 1-4 (a half-loop structure in the positive metal electrode 1-2).
The substrates 1-5 according to the embodiments of the present invention provide mechanical support for the probe device, and the materials thereof include, but are not limited to, silicon nitride, silicon oxide, silicate glass, and the like, and the shapes thereof can be set according to the composition architecture of the probe device.
In an exemplary example, the detection unit 1 according to the embodiment of the present invention further includes:
a positive electrode lead wire 1-6 (at the bottom, indicated by a dotted line) connected to the positive metal electrode 1-2, and a negative electrode lead wire 1-7 (at the bottom, indicated by a dotted line) connected to the negative metal electrode 1-3.
In one illustrative example, the present embodiment channel 1-1 is laid out in a plane.
In an illustrative example, the present embodiment channel 1-1 is longitudinally flared.
In an illustrative example, the channel 1-1 of embodiments of the invention is a cuboid when laid out in a plane.
In an illustrative example, the channel 1-1 of embodiments of the invention is cylindrical when deployed in the longitudinal direction.
In an illustrative example, the channel 1-1 of embodiments of the invention may be formed in other shapes, with cuboids and pillars being alternative embodiments of the invention.
In an illustrative example, the pillars of embodiments of the present invention may include cylinders, quadrangular prisms, etc., and the height of the pillars may be of the order of sub-wavelength.
In an exemplary embodiment, the shapes and sizes of the components included in the detection unit of the embodiments of the present invention may be set by the connections and working relationships between the components as will be appreciated by those skilled in the art.
In an illustrative example, the dimensions of the channel 1-1 of embodiments of the invention are determined by information including the thermal diffusion length. The thermal diffusion length is only one factor that determines the size of the channel 1-1, in other words, the size of the channel 1-1 is not determined only by the thermal diffusion length. In one illustrative example, channel 1-1 of embodiments of the present invention is configured as: receiving terahertz waves to be detected irradiated according to a preset angle;
the positive metal electrode 1-2 and the negative metal electrode 1-3 are arranged as follows: outputting an electric signal generated when the terahertz wave to be detected is irradiated to the channel 1-1;
wherein the electrical signal is proportional to the intensity of the terahertz wave. Fig. 2 is a flowchart of a method for implementing terahertz wave detection according to an embodiment of the present invention, as shown in fig. 2, including:
wherein, more than two detecting element among the detecting device constitute electromagnetic resonance array, and detecting element includes: the device comprises a channel, a positive metal electrode, a negative metal electrode and an electromagnetic resonance structure; the positive metal electrode and the negative metal electrode are in ohmic contact with two ends of the channel and are only electrically connected through the channel; the electromagnetic resonance structure is used for generating electromagnetic resonance.
The positive metal electrode or the negative metal electrode is connected with the electromagnetic resonance structure.
In one illustrative example, the electrical signals in embodiments of the invention include:
a voltage signal or a current signal.
The embodiment of the invention realizes the design of the terahertz wave detection device arranged in the array based on more than two detection units forming the electromagnetic resonance array, and improves the sensitivity of terahertz wave detection.
Application example
The following is a brief description of the embodiments of the present invention by way of application examples, which are only used to illustrate the embodiments of the present invention and are not used to limit the scope of the present invention.
The present application example detection unit 1 includes: the device comprises a channel 1-1, a substrate 1-5, a positive metal electrode 1-2 and a negative metal electrode 1-3; fig. 3 is a schematic bottom view of a detection unit according to an exemplary application of the present invention, and as shown in fig. 3, the detection unit 1 further includes: positive electrode lead wires 1-6 and negative electrode lead wires 1-7.
In an illustrative example, the channel 1-1 of the present application example is in the shape of a rectangular parallelepiped, located above the substrate 1-5, and a good mechanical support can be obtained by the substrate 1-5 detecting unit. The positive metal electrode 1-2 is an open ring resonator (SRR) structure, and based on the SRR structure, the positive metal electrode 1-2 of the application example comprises an electromagnetic resonance structure 1-4; the negative metal electrode 1-3 is a cuboid structure; the positive metal electrode 1-2 and the negative metal electrode 1-3 are respectively positioned at two sides of the channel 1-1 and form good ohmic contact with the channel 1-1.
In an illustrative example, the opening of the split ring of the positive metal electrode 1-2 of the present application is in contact with the channel 1-1.
In an illustrative example, the positive electrode lead wire 1-6 and the negative electrode lead wire 1-7 of the present application example both pass through the substrate 1-5, are connected to the positive metal electrode 1-2 and the negative metal electrode 1-3, respectively, at the top of the probe assembly, and protrude at the bottom of the probe assembly for the purpose of electrical signal extraction.
In the application example, the detection device is fixed on a fixed support, and the front surface of the detection device faces towards the terahertz waves to be detected. Voltage signals or current signals are led out through the positive electrode lead-out wires 1-6 and the negative electrode lead-out wires 1-7, and intensity information of the terahertz waves to be detected can be obtained by reading the voltage or current signals. Since the detection device comprises a plurality of detection units in an array type, the electric signals of the application example are read out by the signal interfaces with corresponding paths of voltage or current signals. The detection implementation process of the terahertz waves comprises the following steps: when the terahertz wave to be detected irradiates on the detection device, the terahertz wave to be detected is modulated by the detection unit. The positive metal electrode 1-2 is used for modulating the terahertz waves, the positive metal electrode 1-2 is an open resonant ring structure, and the size parameters of the positive metal electrode 1-2 can enable the terahertz waves with specific frequency to generate electromagnetic resonance after being designed. Fig. 4 is a distribution diagram of an electric field of the detecting device in an operation state of the present application example, as shown in fig. 4, under the action of electromagnetic resonance, a significant local field enhancement is formed at the opening of the open resonant ring of the positive metal electrode 1-2, and in this region, incident photons strongly react with carriers in the channel 1-1, so that the temperature of this region rises, a local hot spot is formed, and a temperature field distribution with a certain gradient is formed along the channel 1-1 direction (dark color indicates high temperature, light color indicates low temperature). Under the action of the temperature field, carriers in the channel 1-1 diffuse from the positive metal electrode 1-2 side to the negative metal electrode 1-3 side, thereby forming a photocurrent, or expressing a photovoltage. The intensity of the incident terahertz wave can be determined by measuring the magnitude of the current or the voltage.
FIG. 5 is a schematic diagram of another exemplary probing apparatus, as shown in FIG. 5, the probing apparatus includes two or more probing units distributed in an array; the detection units can be distributed in an area array or in a line array. FIG. 6 is a schematic diagram of another exemplary probing unit of the present invention, as shown in FIG. 6, a trench 1-1, a substrate 1-5, a positive metal electrode 1-2, a negative metal electrode 1-3, and an electromagnetic resonance structure 1-4; fig. 7 is a schematic cross-sectional view of another detection unit according to an exemplary application of the present invention, and as shown in fig. 7, the detection unit 1 further includes: positive electrode lead wires 1-6 and negative electrode lead wires 1-7.
This application illustrates that the channel 1-1 may be a cylinder, fixed above the substrate 1-5, with good mechanical support by the substrate 1-5. The positive metal electrode 1-2 is in a disc shape and is fixed above the cylinder of the channel 1-1 to form good ohmic contact with the channel 1-1. The negative metal electrode 1-3 is a square structure, the center of which is provided with a round opening, is positioned below the channel 1-1 and forms good ohmic contact with the channel 1-1. The bottom of the negative metal electrode 1-3 is connected with a negative electrode lead 1-7. This application example the positive metal electrode 1-2 and the negative metal electrode 1-3 are electrically connected only through the channel 1-1, and therefore, an insulating layer is provided on the positive metal electrode 1-2 and the negative metal electrode 1-3 to prevent electrical contact from being formed. The positive metal electrode 1-2 is used for regulating and controlling incident terahertz waves to form electromagnetic resonance. The top end of the positive electrode lead 1-6 is connected with the positive metal electrode 1-2, penetrates through the channel 1-1 and the substrate 1-5, and a certain lead interface is exposed at the bottom of the substrate 1-5 and used for leading out an electric signal. The negative electrode lead 1-7 is a hollow cylinder structure, the cylinder takes the positive electrode lead 1-2 as the axis, the top end is connected with the negative metal electrode 1-3, penetrates through the substrate 1-5 and is exposed at the bottom for leading out the electric signal.
The process of implementing terahertz wave detection by the detection device shown in fig. 5 includes: the terahertz wave to be detected is made to be normally incident to the front face of the detection device, and the incident terahertz wave intensity can be obtained by contrasting the relationship between the incident power and the photovoltage calibrated in advance through the voltage between the positive electrode outgoing line 1-6 and the negative electrode outgoing line 1-7 of the detection device. The detection principle of the terahertz waves is as follows: when incident terahertz waves irradiate the detection device, electromagnetic resonance is generated under the common modulation of the positive metal electrode 1-2 and the negative metal electrode 1-3, and a local hot spot is formed near the positive metal electrode 1-2. Fig. 8 is a diagram of an electric field distribution of another detecting device in the working state of this application example, as shown in fig. 8, the temperature of the channel 1-1 at the local hot spot is higher than that of the vicinity of the negative metal electrode 1-3, so that the carriers in the channel 1-1 diffuse from one end of the positive metal electrode 1-2 to one end of the negative metal electrode 1-3, thereby forming a photovoltage on two sides of the channel 1-1. The photo-voltage can be measured through the positive electrode lead 1-6 and the negative electrode lead 1-7, thereby determining intensity information of the incident terahertz wave.
The detection process of the terahertz wave of the application example comprises the following steps: incident terahertz waves irradiate the detection device, interact with a detection unit in the detection device, excite electromagnetic resonance, and form a local electromagnetic field at a specific position of the detection device; the field intensity of incident terahertz waves is enhanced by utilizing the formed local electromagnetic field, so that the field intensity and a material which can absorb the terahertz waves in the detection device are in strong interaction, energy is converted into heat energy from light energy, a local hot point is formed at the position of the local electromagnetic field, and a high-temperature area is formed nearby the local hot point. Meanwhile, a low-temperature region is formed at a position where local electromagnetic resonance does not occur in the detection device; generating a temperature field with gradient distribution in the channel by means of the generated local hot spot and the low-temperature region, driving carriers to diffuse from the high-temperature region to the low-temperature region, generating photocurrent in the channel, and forming photovoltage at two ends of the channel; measuring the magnitude of photocurrent or photovoltage, and calibrating the relationship between the magnitude of the electrical signal and the intensity of incident terahertz waves; and comparing the relationship between the incident power calibrated in advance and the electric signal to obtain the intensity information of the incident terahertz wave.
According to the application example, incident terahertz waves are regulated and controlled by the artificial electromagnetic microstructures, locally enhanced electromagnetic fields are excited at all detection units, an arrayed local hot spot is constructed, and the problem that the arrayed sensitivity of the structural photothermal detector in the related technology is insufficient is solved. The array detection under the incidence of the uniform terahertz waves is realized, and the detection sensitivity of a single detection unit is enhanced by using the local field. Example artificial electromagnetic microstructures for this application include, but are not limited to, metamaterials, super-surfaces, photonic crystals, sub-wavelength gratings, surface plasmon arrays, and the like. The application example realizes conversion of terahertz wave energy into electric energy through a photoelectric effect. In the theory concerned, the above-mentioned photothermal effect is also expressed as hot carrier effect, non-equilibrium carrier effect, and the detection device prepared according to this effect is sometimes called a thermocouple or a thermopile, and the basic principle is consistent and should be considered as the same mechanism. The terahertz wave detection provided by the application example does not need extra terahertz wave modulator components such as lenses and wave plates, and can realize array detection under non-focusing terahertz irradiation; in addition, the number of the detection units in the application example is not limited, and the detection units can be linear array detection or area array detection; the arrangement direction of the detection channels can be perpendicular to the direction of the incident terahertz waves, can also be parallel to the direction of the incident terahertz waves, or can be combined in multiple directions.
According to the terahertz wave detection method and device provided by the application example, the artificial electromagnetic microstructure is introduced into the detection device, the artificial electromagnetic microstructure is utilized to realize absorption enhancement of incident terahertz waves, the photo-thermal conversion efficiency of a device is improved, and the performance of the photo-thermal detector is improved; the artificial electromagnetic microstructure can modulate an incident terahertz light field, and a plurality of local hot spots are formed at different positions under the irradiation of a uniform terahertz light field, so that the requirement of array detection is met, and the problem of terahertz photothermal electric detection in the aspect of array integration is solved; the artificial electromagnetic microstructure can be expanded in a three-dimensional space, a terahertz optical field is limited in three dimensions at the same time, a smaller mode volume and a larger resonance field intensity are obtained, the interaction strength of incident terahertz waves and channels is improved, and high-sensitivity terahertz wave detection is realized; the artificial electromagnetic microstructure is generally composed of a plurality of resonance units and has obvious periodicity, which is highly matched with the requirement of array detection, when the array detection is realized, one or more resonance units can be designed into the front end of a detection unit, and the detection array formed in this way is regularly arranged, convenient to lead and strong in practicability; the gradient temperature field along the vertical direction can be conveniently constructed by utilizing the artificial electromagnetic microstructure, so that the photothermal electric device with the channel direction parallel to the incident direction of the terahertz waves, namely vertical distribution, is designed and developed. Compare in the photothermal power device that the channel expanded in the horizontal plane, the thermal locality of vertical type photothermal power device is better, and sensitivity is higher promptly, the structural cycle is littleer, and compact structure.
"one of ordinary skill in the art will appreciate that all or some of the steps of the methods, systems, functional modules/units in the devices disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof. In a hardware implementation, the division between functional modules/units mentioned in the above description does not necessarily correspond to the division of physical components; for example, one physical component may have multiple functions, or one function or step may be performed by several physical components in cooperation. Some or all of the components may be implemented as software executed by a processor, such as a digital signal processor or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable media, which may include computer storage media (or non-transitory media) and communication media (or transitory media). The term computer storage media includes volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, as is well known to those of ordinary skill in the art. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, Digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can accessed by a computer. In addition, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media as known to those skilled in the art. ".
Claims (11)
1. A probe apparatus, comprising: two or more detection units (1) constituting an electromagnetic resonance array, the detection units (1) comprising: the device comprises a channel (1-1), a positive metal electrode (1-2), a negative metal electrode (1-3) and an electromagnetic resonance structure (1-4); wherein the content of the first and second substances,
the positive metal electrode (1-2) and the negative metal electrode (1-3) are in ohmic contact with two ends of the channel (1-1) and are only electrically connected through the channel (1-1);
the electromagnetic resonance structure (1-4) is used for generating electromagnetic resonance.
2. A detection device according to claim 1, characterized in that the positive metal electrode (1-2) or the negative metal electrode (1-3) is connected to an electromagnetic resonance structure (1-4).
3. The detection apparatus according to claim 1, wherein the detection unit (1) further comprises:
and the substrate (1-5) is used for arranging the channel (1-1), the positive metal electrode (1-2), the negative metal electrode (1-3) and the electromagnetic resonance structure (1-4).
4. The detection device according to claim 1, wherein the detection unit further comprises:
a positive electrode lead-out wire (1-6) connected with the positive metal electrode (1-2), and a negative electrode lead-out wire (1-7) connected with the negative metal electrode (1-3).
5. A detection device according to any of claims 1-4, characterized in that the size of the detection unit (1) is of sub-wavelength order.
6. A probe device according to any of claims 1 to 4, wherein the channel (1-1) is planar or longitudinally extending.
7. A probe device according to claim 6,
the channel (1-1) is a cuboid when unfolded along a plane;
the channel (1-1) is a cylinder when unfolded along the longitudinal direction.
8. A detection device according to claim 7, characterized in that the dimensions of the channel (1-1) are determined by information including the length of thermal diffusion.
9. A probe device according to any of claims 1 to 4, wherein the channel (1-1) is arranged to:
receiving terahertz waves to be detected irradiated according to a preset angle;
the positive metal electrode (1-2) and the negative metal electrode (1-3) are arranged as follows: outputting an electric signal generated when the terahertz wave to be detected irradiates the channel (1-1);
wherein the electrical signal is proportional to the intensity of the terahertz wave.
10. A method of implementing terahertz wave detection, comprising:
irradiating the terahertz wave to be detected to channels of more than two detection units of a preset detection device according to a preset angle;
reading an electric signal generated by irradiating a channel of the detection unit with the terahertz wave to be detected from a positive metal electrode and a negative metal electrode of the detection unit;
determining the intensity information of the terahertz waves according to the read electric signals;
wherein, two or more detection units in the detection device constitute an electromagnetic resonance array, and the detection unit comprises: the device comprises a channel, a positive metal electrode, a negative metal electrode and an electromagnetic resonance structure; the positive metal electrode and the negative metal electrode are in ohmic contact with two ends of the channel and are only electrically connected through the channel; the electromagnetic resonance structure is used for generating electromagnetic resonance.
11. The method of claim 10, wherein the electrical signal comprises:
a voltage signal or a current signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110298258.4A CN113175991A (en) | 2021-03-19 | 2021-03-19 | Detection device and method for realizing terahertz wave detection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110298258.4A CN113175991A (en) | 2021-03-19 | 2021-03-19 | Detection device and method for realizing terahertz wave detection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113175991A true CN113175991A (en) | 2021-07-27 |
Family
ID=76922463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110298258.4A Pending CN113175991A (en) | 2021-03-19 | 2021-03-19 | Detection device and method for realizing terahertz wave detection |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113175991A (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102237432A (en) * | 2010-05-07 | 2011-11-09 | 同济大学 | Terahertz and infrared frequency band sensitive photon detector |
| CN102445711A (en) * | 2010-09-30 | 2012-05-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | THz-wave detector |
| CN104360424A (en) * | 2014-10-19 | 2015-02-18 | 北京工业大学 | Broadband terahertz metamaterial absorber based on L-shaped structures |
| CN105336809A (en) * | 2015-11-09 | 2016-02-17 | 中国工程物理研究院电子工程研究所 | Terahertz wave detector with array conductive channel structure |
| CN105720378A (en) * | 2016-01-13 | 2016-06-29 | 武汉科技大学 | Polarization-insensitive photic driving tunable TeraHertz wave metamaterial absorber |
| CN107482109A (en) * | 2017-07-02 | 2017-12-15 | 中国科学院上海微系统与信息技术研究所 | A kind of room temperature terahertz detector based on graphene thermal electrical effect and preparation method thereof |
| CN108389874A (en) * | 2018-01-25 | 2018-08-10 | 电子科技大学 | A kind of photodetector of Localized field enhancement molded breadth spectrum height response |
| US20190078938A1 (en) * | 2016-03-16 | 2019-03-14 | Centre National De La Recherche Scientifique - Cnrs | Detector for terahertz electromagnetic waves |
| CN109494293A (en) * | 2018-12-28 | 2019-03-19 | 同方威视技术股份有限公司 | Terahertz detector and its manufacturing method |
| CN111739950A (en) * | 2019-03-19 | 2020-10-02 | 国家纳米科学中心 | Terahertz photoelectric detector |
-
2021
- 2021-03-19 CN CN202110298258.4A patent/CN113175991A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102237432A (en) * | 2010-05-07 | 2011-11-09 | 同济大学 | Terahertz and infrared frequency band sensitive photon detector |
| CN102445711A (en) * | 2010-09-30 | 2012-05-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | THz-wave detector |
| CN104360424A (en) * | 2014-10-19 | 2015-02-18 | 北京工业大学 | Broadband terahertz metamaterial absorber based on L-shaped structures |
| CN105336809A (en) * | 2015-11-09 | 2016-02-17 | 中国工程物理研究院电子工程研究所 | Terahertz wave detector with array conductive channel structure |
| CN105720378A (en) * | 2016-01-13 | 2016-06-29 | 武汉科技大学 | Polarization-insensitive photic driving tunable TeraHertz wave metamaterial absorber |
| US20190078938A1 (en) * | 2016-03-16 | 2019-03-14 | Centre National De La Recherche Scientifique - Cnrs | Detector for terahertz electromagnetic waves |
| CN107482109A (en) * | 2017-07-02 | 2017-12-15 | 中国科学院上海微系统与信息技术研究所 | A kind of room temperature terahertz detector based on graphene thermal electrical effect and preparation method thereof |
| CN108389874A (en) * | 2018-01-25 | 2018-08-10 | 电子科技大学 | A kind of photodetector of Localized field enhancement molded breadth spectrum height response |
| CN109494293A (en) * | 2018-12-28 | 2019-03-19 | 同方威视技术股份有限公司 | Terahertz detector and its manufacturing method |
| CN111739950A (en) * | 2019-03-19 | 2020-10-02 | 国家纳米科学中心 | Terahertz photoelectric detector |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wen et al. | Hot electron harvesting via photoelectric ejection and photothermal heat relaxation in hotspots-enriched plasmonic/photonic disordered nanocomposites | |
| Benseman et al. | Powerful terahertz emission from Bi2Sr2CaCu2O8+ δ mesa arrays | |
| WO2016140946A1 (en) | Plasmon-enhanced terahertz graphene-based photodetector and method of fabrication | |
| US20100282967A1 (en) | High sensitivity thz signal detector and camera | |
| US8785852B2 (en) | Terahertz imaging device with improved thermal converter | |
| CN109490241B (en) | Rapid dynamic terahertz near-field imaging system based on photoconductive antenna array and construction method thereof | |
| JP2008145289A (en) | Electromagnetic wave sensor, imaging element, and imaging device | |
| EP3905351A1 (en) | Terahertz detector and manufacturing method therefor | |
| Henri et al. | Fabrication and characterization of an 8× 8 terahertz photoconductive antenna array for spatially resolved time domain spectroscopy and imaging applications | |
| CN102445420A (en) | Transmission imaging device and method based on tera-hertz quantum device | |
| CN111060466B (en) | Portable optical gas sensor | |
| JP2014190975A (en) | Photoelectric transducer and light detection method | |
| WO2007126706A2 (en) | Multi-band terahertz receiver and imaging device | |
| Malhotra et al. | Design of highly directive lens-less photoconductive dipole antenna array with frequency selective surface for terahertz imaging applications | |
| EP0299841B1 (en) | Electromagnetic wave detector and image analyser using such a detector | |
| CN113175991A (en) | Detection device and method for realizing terahertz wave detection | |
| US11898905B2 (en) | Plasmonic metamaterial structure | |
| CN110767769A (en) | Detection unit, ultra-wideband photodetector and detection method | |
| CN111289104A (en) | Terahertz energy detector, detection system and application | |
| CN115753759A (en) | Phase-locked carrier radiation imaging test system and method for perovskite material/device | |
| Carelli et al. | A fast terahertz spectrometer based on frequency selective surface filters | |
| CN104836098A (en) | Photoconductive antenna, camera, imaging device, and measurement device | |
| Isgandarov et al. | Terahertz emission enhancement of GaAs-based photoconductive antennas via the nanodecoration of their surface by means of pulsed-laser-deposition of gold nanoparticles | |
| Liu et al. | Multiplexed infrared photodetection using resonant radio-frequency circuits | |
| CN210956702U (en) | Detection unit and ultra-wideband photodetector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |