CN113120848A - Method for manufacturing electrothermal MEMS driving arm and electrothermal MEMS driving arm - Google Patents
Method for manufacturing electrothermal MEMS driving arm and electrothermal MEMS driving arm Download PDFInfo
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- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0024—Transducers for transforming thermal into mechanical energy or vice versa, e.g. thermal or bimorph actuators
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- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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Abstract
A method of fabricating an electrothermal MEMS actuator arm, comprising the steps of: 1) selecting high-resistance silicon as a substrate; 2) patterning the substrate to form a mask of a pre-designed conductive loop pattern; 3) doping the substrate by using an injection method or a diffusion method to form a conductive loop, wherein the conductive loop is used as a heating resistance layer; 4) manufacturing an insulating material on the heating resistance layer to be used as an insulating layer; 5) manufacturing a material with high thermal expansion coefficient on the insulating layer to be used as a first structural layer; 6) etching the bottom of the substrate, and leaving high-resistance silicon with set thickness as a second structural layer; 7) carrying out front patterned etching on the upper part of the substrate according to the shape of a pre-designed MEMS driving arm; and finally, manufacturing the electrothermal MEMS driving arm. The advantages are that: the silicon is used as a structural layer and a heating resistance layer, so that the trouble of needing to make the heating resistance layer is avoided, the process steps of the heating resistance layer of the electrothermal MEMS driving arm are simplified, and the efficiency is improved.
Description
Technical Field
The invention relates to a method for manufacturing an electrothermal MEMS driving arm and the electrothermal MEMS driving arm, belonging to the field of micro-mechanical and electronic systems.
Background
The electrothermal MEMS driving arm based on the thermal double-layer material (Bimorph) structure drives the device structure through joule heat generated by applying voltage to the conductive loop layer (heating resistance layer), and has the advantages of large rotation angle, large displacement, low driving voltage and the like. The existing manufacturing process (such as CN106066535A and CN 104020561B) of the heating resistance layer of the electrothermal MEMS device can only grow a conductive metal film layer in a Bimorph structure layer and carry out insulation wrapping on the conductive metal film layer, the process needs to accumulate and prepare a plurality of layers of films, uncontrollable factors such as stress, thickness, oxidation, diffusion and the like of the plurality of layers of films are introduced, the process difficulty of manufacturing the device is increased, and the process consistency and the structural stability of the device are deteriorated.
Disclosure of Invention
The invention aims to solve the technical problem of how to simplify the process of manufacturing the heating resistor layer of the electrothermal MEMS driving arm and improve the process consistency and stability of the heating resistor layer.
The technical scheme created by the invention is as follows: a method for manufacturing an electrothermal MEMS driving arm, the electrothermal MEMS driving arm at least comprises a heating resistance layer 4, a first structural layer 6, a second structural layer 7, and an insulating layer 5 between the first structural layer 6 and the second structural layer 7, and is characterized by comprising the following steps:
step 1), selecting high-resistance silicon as a substrate 1;
step 2), patterning is carried out on the substrate 1 to form a mask of a pre-designed conductive circuit pattern 3;
step 3), doping the substrate 1 by using an injection method or a diffusion method to form a conductive loop, wherein the conductive loop is used as a heating resistance layer 4;
step 4), manufacturing an insulating material on the heating resistor layer 4 to serve as an insulating layer 5;
step 5), manufacturing a material with a high thermal expansion coefficient on the insulating layer 5 to serve as a first structural layer 6;
step 6), etching the bottom of the substrate 1, and leaving high-resistance silicon with a set thickness as a second structural layer 7;
step 7), carrying out front patterned etching on the upper part of the substrate 1 according to the pre-designed shape of the MEMS driving arm;
and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 6) and the step 7) can be interchanged.
A method for manufacturing an electrothermal MEMS driving arm, which at least comprises a heating resistance layer 4, a first structural layer 6 and a second structural layer 7, is characterized by comprising the following steps:
step 1), selecting high-resistance silicon as a substrate 1;
step 2), patterning is carried out on the substrate 1 to form a mask of a pre-designed conductive circuit pattern 3;
step 3), doping the substrate 1 by using an injection method or a diffusion method to form a conductive loop, wherein the conductive loop is used as a heating resistance layer 4;
step 4), manufacturing an insulating material with a high thermal expansion coefficient on the upper layer of the heating resistor layer 4 to be used as a first structural layer 6;
step 5), etching the bottom of the substrate 1, and leaving high-resistance silicon with a set thickness as a second structural layer 7;
step 6), carrying out front patterned etching on the upper part of the substrate 1 according to the pre-designed shape of the MEMS driving arm;
and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 5) and the step 6) can be interchanged.
A method for manufacturing an electrothermal MEMS driving arm, the electrothermal MEMS driving arm at least comprises a heating resistance layer 4, a first structural layer 6, a second structural layer 7, and an insulating layer 5 between the first structural layer 6 and the second structural layer 7, and is characterized by comprising the following steps:
step 1), selecting high-resistance silicon as a substrate 1;
step 2), carrying out P-type ion heavy doping on the surface of the substrate 1 by using an injection method or a diffusion method to form a deep silicon etching stop layer 8 as a second structure layer 7;
step 3), masking and photoetching are carried out on the deep silicon etching stop layer 8, and an N-type ion doping area is reserved;
step 4), doping N-type ions into the P-type ion doping area according to a pre-designed conductive loop pattern 3 to form N-type silicon serving as a heating resistance layer 4;
step 5), removing the mask, and manufacturing an insulating material on the heating resistor layer 4 to be used as an insulating layer 5;
step 6), manufacturing a material with a high thermal expansion coefficient on the insulating layer 5 to serve as a first structural layer 6;
step 7), etching the bottom of the substrate 1 to the deep silicon etching stop layer 8;
step 8), carrying out front patterned etching on the upper part of the substrate 1 according to the pre-designed shape of the MEMS driving arm;
and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 7) and the step 8) can be interchanged.
A method for manufacturing an electrothermal MEMS driving arm, the electrothermal MEMS driving arm at least comprises a heating resistance layer 4, a first structural layer 6, a second structural layer 7, and an insulating layer 5 between the first structural layer 6 and the second structural layer 7, and is characterized by comprising the following steps:
step 1), selecting high-resistance silicon as a substrate 1;
step 2), carrying out P-type ion heavy doping on the surface of the substrate 1 by using an injection method or a diffusion method to form a deep silicon etching stop layer 8, wherein the deep silicon etching stop layer 8 is used as the second structure layer 7 and also used as the heating resistor layer 4;
step 3), removing the mask, and manufacturing an insulating material on the heating resistor layer 4 to be used as an insulating layer 5;
step 4), manufacturing a material with high thermal expansion coefficient on the insulating layer 5 to serve as a first structural layer 6;
step 5), etching the bottom of the substrate 1 to the heating resistor layer 4;
step 6), carrying out front patterned etching on the upper part of the substrate 1 according to the pre-designed shape of the MEMS driving arm;
and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 5) and the step 6) can be interchanged.
A method for manufacturing an electrothermal MEMS driving arm, which at least comprises a heating resistance layer 4, a first structural layer 6 and a second structural layer 7, is characterized by comprising the following steps:
step 1), selecting high-resistance silicon as a substrate 1;
step 2), carrying out P-type ion heavy doping on the surface of the substrate 1 by using an injection method or a diffusion method to form a deep silicon etching stop layer 8 as a second structure layer 7;
step 3), masking and photoetching are carried out on the deep silicon etching stop layer 8, and an N-type ion doping area is reserved;
step 4), doping N-type ions into the P-type ion doping area according to a pre-designed conductive loop pattern 3 to form N-type silicon serving as a heating resistance layer 4;
step 5), manufacturing an insulating material with a high thermal expansion coefficient on the upper layer of the heating resistor layer 4 to be used as a first structural layer 6;
step 6), etching the bottom of the substrate 1 to the deep silicon etching stop layer 8;
step 7), carrying out front patterned etching on the upper part of the substrate 1 according to the pre-designed shape of the MEMS driving arm;
and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 6) and the step 7) can be interchanged.
A method for manufacturing an electrothermal MEMS driving arm, which at least comprises a heating resistance layer 4, a first structural layer 6 and a second structural layer 7, is characterized by comprising the following steps:
step 1), selecting high-resistance silicon as a substrate 1;
step 2), carrying out P-type ion heavy doping on the surface of the substrate 1 by using an injection method or a diffusion method to form a deep silicon etching stop layer 8, wherein the deep silicon etching stop layer 8 is used as the second structure layer 7 and also used as the heating resistor layer 4;
step 3), manufacturing an insulating material with a high thermal expansion coefficient on the upper layer of the heating resistor layer 4 to be used as a first structural layer 6;
step 4), etching the bottom of the substrate 1 to the heating resistor layer 4;
and step 5), carrying out front-side graphical etching on the upper part of the substrate 1 according to the pre-designed shape of the MEMS driving arm, and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm.
Wherein, the deep silicon etching stop layer 8 formed in the step 2) can be grown on the upper layer of the substrate 1 in an epitaxial mode.
An electrothermal MEMS drive arm, one end of the electrothermal MEMS drive arm is connected with a substrate 1, the other end is connected with a driven unit 9, the electrothermal MEMS drive arm comprises a first structural layer 6 and a second structural layer 7, and is characterized by further comprising a heating resistance layer 4 formed by doping part or the whole of the second structural layer 7.
The electrothermal MEMS actuating arm further comprises an insulating layer 5, the insulating layer 5 being located above the heating resistor layer 4.
The first structural layer 6 is metal aluminum or polymer, and the second structural layer 7 is high-resistance silicon or P-type silicon or N-type silicon.
The driven unit 9 is a micromirror or a micro-structured stage.
The electrothermal MEMS actuator arm is a folded beam structure, and the first structural layer 6 of the folded beam structure is divided into three sections, which are respectively located on three beams of the folded beam structure.
The electrothermal MEMS driving arm is a U-shaped beam structure or a beam structure with bending.
The first structural layer 6 on the electrothermal MEMS actuation arm is discontinuous.
The electrothermal MEMS driving arm also comprises a Via and a metal lead, wherein the metal lead is connected on the heating resistance layer 4 through the Via.
The invention has the advantages that: the invention has the advantages that the silicon is used as a structural layer and a heating resistance layer, so that the trouble of manufacturing the heating resistance layer is avoided, the ion implantation method is adopted to manufacture the heating resistance layer, the process steps of the heating resistance layer of the electrothermal MEMS driving arm are simplified, and the efficiency is improved.
Drawings
Fig. 1 is a schematic structural diagram of an electrothermal MEMS actuator arm.
Fig. 2 is a schematic view of the heating resistor layer 4 in fig. 1.
FIG. 3 is a schematic view of the production flow of example 1.
FIG. 4 is a schematic view of the production flow of example 2.
FIG. 5 is a schematic view of the production flow of example 3.
FIG. 6 is a schematic view of the production flow of example 4.
FIG. 7 is a schematic view of the production flow of example 5.
FIG. 8 is a schematic view of the production flow of example 6.
Figure 9 is a top view of an electrothermal MEMS drive arm.
Figure 10 is a top view of another electrothermal MEMS actuator arm.
Fig. 11 shows the result of deformation caused by heating in fig. 9.
Fig. 12 shows the result of deformation caused by heating in fig. 10.
Figure 13 is a top view of a multi-sectioned electrothermal MEMS drive arm.
Figure 14 is a top view of a multi-sectioned electro-thermal MEMS drive arm connected to a driven element.
Figure 15 is a top view of a single section of an electro-thermal MEMS actuating arm connected to a driven element.
Figure 16 is a top view of two electro-thermal MEMS drive arms connected to a driven element.
Figure 17 is a top view of four electro-thermal MEMS drive arms connected to a driven element.
In the figure, 1 is a substrate, 2 is photoresist, 3 is a conductive circuit pattern, 4 is a heating resistor layer, 5 is an insulating layer, 6 is a first structural layer, 7 is a second structural layer, 8 is a deep silicon etching stop layer, and 9 is a driven unit.
Detailed Description
A method for manufacturing an electrothermal MEMS driving arm, the electrothermal MEMS driving arm at least comprises a heating resistance layer 4, a first structural layer 6, a second structural layer 7, and an insulating layer 5 between the first structural layer 6 and the second structural layer 7, and is characterized by comprising the following steps:
step 1), selecting high-resistance silicon as a substrate 1;
step 2), patterning is carried out on the substrate 1 to form a mask of a pre-designed conductive circuit pattern 3;
step 3), doping the substrate 1 by using an injection method or a diffusion method to form a conductive loop, wherein the conductive loop is used as a heating resistance layer 4;
step 4), manufacturing an insulating material on the heating resistor layer 4 to serve as an insulating layer 5;
step 5), manufacturing a material with a high thermal expansion coefficient on the insulating layer 5 to serve as a first structural layer 6;
step 6), etching the bottom of the substrate 1, and leaving high-resistance silicon with a set thickness as a second structural layer 7;
step 7), carrying out front patterned etching on the upper part of the substrate 1 according to the pre-designed shape of the MEMS driving arm;
and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 6) and the step 7) can be interchanged.
A method for manufacturing an electrothermal MEMS driving arm, which at least comprises a heating resistance layer 4, a first structural layer 6 and a second structural layer 7, is characterized by comprising the following steps:
step 1), selecting high-resistance silicon as a substrate 1;
step 2), patterning is carried out on the substrate 1 to form a mask of a pre-designed conductive circuit pattern 3;
step 3), doping the substrate 1 by using an injection method or a diffusion method to form a conductive loop, wherein the conductive loop is used as a heating resistance layer 4;
step 4), manufacturing an insulating material with a high thermal expansion coefficient on the upper layer of the heating resistor layer 4 to be used as a first structural layer 6;
step 5), etching the bottom of the substrate 1, and leaving high-resistance silicon with a set thickness as a second structural layer 7;
step 6), carrying out front patterned etching on the upper part of the substrate 1 according to the pre-designed shape of the MEMS driving arm;
and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 5) and the step 6) can be interchanged.
A method for manufacturing an electrothermal MEMS driving arm, the electrothermal MEMS driving arm at least comprises a heating resistance layer 4, a first structural layer 6, a second structural layer 7, and an insulating layer 5 between the first structural layer 6 and the second structural layer 7, and is characterized by comprising the following steps:
step 1), selecting high-resistance silicon as a substrate 1;
step 2), carrying out P-type ion heavy doping on the surface of the substrate 1 by using an injection method or a diffusion method to form a deep silicon etching stop layer 8 as a second structure layer 7;
step 3), masking and photoetching are carried out on the deep silicon etching stop layer 8, and an N-type ion doping area is reserved;
step 4), doping N-type ions into the P-type ion doping area according to a pre-designed conductive loop pattern 3 to form N-type silicon serving as a heating resistance layer 4;
step 5), removing the mask, and manufacturing an insulating material on the heating resistor layer 4 to be used as an insulating layer 5;
step 6), manufacturing a material with a high thermal expansion coefficient on the insulating layer 5 to serve as a first structural layer 6;
step 7), etching the bottom of the substrate 1 to the deep silicon etching stop layer 8;
step 8), carrying out front patterned etching on the upper part of the substrate 1 according to the pre-designed shape of the MEMS driving arm;
and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 7) and the step 8) can be interchanged.
A method for manufacturing an electrothermal MEMS driving arm, the electrothermal MEMS driving arm at least comprises a heating resistance layer 4, a first structural layer 6, a second structural layer 7, and an insulating layer 5 between the first structural layer 6 and the second structural layer 7, and is characterized by comprising the following steps:
step 1), selecting high-resistance silicon as a substrate 1;
step 2), carrying out P-type ion heavy doping on the surface of the substrate 1 by using an injection method or a diffusion method to form a deep silicon etching stop layer 8, wherein the deep silicon etching stop layer 8 is used as the second structure layer 7 and also used as the heating resistor layer 4;
step 3), removing the mask, and manufacturing an insulating material on the heating resistor layer 4 to be used as an insulating layer 5;
step 4), manufacturing a material with high thermal expansion coefficient on the insulating layer 5 to serve as a first structural layer 6;
step 5), etching the bottom of the substrate 1 to the heating resistor layer 4;
step 6), carrying out front patterned etching on the upper part of the substrate 1 according to the pre-designed shape of the MEMS driving arm;
and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 5) and the step 6) can be interchanged.
A method for manufacturing an electrothermal MEMS driving arm, which at least comprises a heating resistance layer 4, a first structural layer 6 and a second structural layer 7, is characterized by comprising the following steps:
step 1), selecting high-resistance silicon as a substrate 1;
step 2), carrying out P-type ion heavy doping on the surface of the substrate 1 by using an injection method or a diffusion method to form a deep silicon etching stop layer 8 as a second structure layer 7;
step 3), masking and photoetching are carried out on the deep silicon etching stop layer 8, and an N-type ion doping area is reserved;
step 4), doping N-type ions into the P-type ion doping area according to a pre-designed conductive loop pattern 3 to form N-type silicon serving as a heating resistance layer 4;
step 5), manufacturing an insulating material with a high thermal expansion coefficient on the upper layer of the heating resistor layer 4 to be used as a first structural layer 6;
step 6), etching the bottom of the substrate 1 to the deep silicon etching stop layer 8;
step 7), carrying out front patterned etching on the upper part of the substrate 1 according to the pre-designed shape of the MEMS driving arm;
and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 6) and the step 7) can be interchanged.
A method for manufacturing an electrothermal MEMS driving arm, which at least comprises a heating resistance layer 4, a first structural layer 6 and a second structural layer 7, is characterized by comprising the following steps:
step 1), selecting high-resistance silicon as a substrate 1;
step 2), carrying out P-type ion heavy doping on the surface of the substrate 1 by using an injection method or a diffusion method to form a deep silicon etching stop layer 8, wherein the deep silicon etching stop layer 8 is used as the second structure layer 7 and also used as the heating resistor layer 4;
step 3), manufacturing an insulating material with a high thermal expansion coefficient on the upper layer of the heating resistor layer 4 to be used as a first structural layer 6;
step 4), etching the bottom of the substrate 1 to the heating resistor layer 4;
and step 5), carrying out front-side graphical etching on the upper part of the substrate 1 according to the pre-designed shape of the MEMS driving arm, and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm.
Wherein, the deep silicon etching stop layer 8 formed in the step 2) can be grown on the upper layer of the substrate 1 in an epitaxial mode.
An electrothermal MEMS drive arm, one end of the electrothermal MEMS drive arm is connected with a substrate 1, the other end is connected with a driven unit 9, the electrothermal MEMS drive arm comprises a first structural layer 6 and a second structural layer 7, and is characterized by further comprising a heating resistance layer 4 formed by doping part or the whole of the second structural layer 7.
The electrothermal MEMS actuating arm further comprises an insulating layer 5, the insulating layer 5 being located above the heating resistor layer 4.
The first structural layer 6 is metal aluminum or polymer, and the second structural layer 7 is high-resistance silicon or P-type silicon or N-type silicon.
The driven unit 9 is a micromirror or a micro-structured stage.
The electrothermal MEMS actuator arm is a folded beam structure, and the first structural layer 6 of the folded beam structure is divided into three sections, which are respectively located on three beams of the folded beam structure.
The electrothermal MEMS driving arm is a U-shaped beam structure or a beam structure with bending.
The first structural layer 6 on the electrothermal MEMS actuation arm is discontinuous.
The electrothermal MEMS driving arm also comprises a Via and a metal lead, wherein the metal lead is connected on the heating resistance layer 4 through the Via.
As shown in fig. 1, 2, and 9-17, an electrothermal MEMS actuator arm, one end of which is connected to a substrate 1 and the other end of which is connected to a driven unit 9, includes a first structural layer 6 and a second structural layer 7, and further includes a heating resistor layer 4 formed by doping the inside of the second structural layer 7 or the whole second structural layer 7.
The electrothermal MEMS actuating arm further comprises an insulating layer 5, the insulating layer 5 being located above the heating resistor layer 4. The first structural layer 6 is metallic aluminum or a polymer (e.g., SU-8, PVDF, PMMI, PI, etc.), and the second structural layer 7 is high-resistivity silicon. The driven unit 9 is a mirror.
As shown in fig. 13 and 14, the electrothermal MEMS actuator arm is a folded beam structure, and the first structural layer 6 of the folded beam structure is divided into three segments, which are respectively located on three beams of the folded beam structure. At this time, the first structural layer 6 is discontinuous.
As shown in fig. 9 and 10, the electrothermal MEMS driving arm has a U-beam structure, and as shown in fig. 11 and 12, the electrothermal MEMS driving arm has a beam structure with a bend.
The electrothermal MEMS driving arm also comprises a Via and a metal lead, wherein the metal lead is connected on the heating resistance layer 4 through the Via.
Example 1
As shown in fig. 3, a method for fabricating an electrothermal MEMS actuator arm, which at least includes a heating resistor layer 4, a first structural layer 6, a second structural layer 7, and an insulating layer 5 between the first structural layer 6 and the second structural layer 7, includes the following steps.
Step 1), selecting high-resistance silicon as a substrate 1.
Step 2), patterning the substrate 1, i.e. coating photoresist (as shown in fig. 3 a), and then performing photolithography to form a mask of the pre-designed conductive loop pattern 3, as shown in fig. 3 b.
Step 3), doping the substrate 1 by using an implantation method or a diffusion method (the ions may be P-type ions or N-type ions), and forming a conductive loop, which serves as the heating resistor layer 4, as shown in fig. 3 c.
Step 4), removing the photoresist 2, and forming an insulating material (e.g., a deposit) on the heating resistor layer 4SiO deposition2Thin film layer) as an insulating layer 5, as shown in fig. 3 d. At this time, Via holes and metal leads can be manufactured, and the specific manufacturing method comprises the following steps: patterning the insulating layer 5, namely coating photoresist, and then photoetching to form a Via mask; etching the insulating layer 5 by using the Via mask to form a Via through hole, and then removing the Via mask; a conductive material (e.g., a metal film) is deposited on the insulating layer 5 and metal leads are formed by photolithography and etching or liftoff.
Step 5), a material with high thermal expansion coefficient is made on the insulating layer 5 (for example, metal aluminum is deposited), and a first structural layer 6 is formed by photoetching and etching or liftoff, as shown in fig. 3 e; if the material with the high thermal expansion coefficient is the same as the metal lead material, the metal lead is formed together with the first structural layer 6.
And 6) etching the bottom of the substrate 1, and leaving high-resistance silicon with a set thickness as a second structural layer 7.
And 7) carrying out front patterned etching on the upper part of the substrate 1 according to the pre-designed MEMS driving arm shape.
And finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 6) and the step 7) can be interchanged.
The material of the substrate 1 may be selected to be high-resistivity silicon, P-type silicon or N-type silicon.
When P-type silicon is selected, the doped ions may be P-type ions or N-type ions in step 3). However, when doping P-type ions, the doping concentration is much higher than that of the P-type ions in the substrate 1; when N-type ions are doped, PN junctions are formed with the substrate 1 after doping, and the voltage applied to the N-type regions is higher than that of the P-type regions, so that PN junction reverse bias is formed.
When N-type silicon is selected, the doped ions may be P-type ions or N-type ions in step 3). However, when doping N-type ions, the doping concentration is much higher than that of the N-type ions in the substrate 1; when doping P-type ions, after doping, forming PN junction with the substrate 1, the voltage applied to the N-type region is higher than that of the P-type region, and forming PN junction reverse bias.
Example 2
This embodiment is different from embodiment 1 in that the electrothermal MEMS driving arm is fabricated without the insulating layer 5.
A method for manufacturing an electrothermal MEMS driving arm, which at least comprises a heating resistor layer 4, a first structural layer 6 and a second structural layer 7, is characterized by comprising the following steps.
Step 1), selecting high-resistance silicon as a substrate 1.
Step 2), patterning the substrate 1, i.e. coating photoresist (as shown in fig. 4 a), and then performing photolithography to form a mask of the pre-designed conductive loop pattern 3, as shown in fig. 4 b.
Step 3), doping the substrate 1 by using an implantation method or a diffusion method (the ions may be P-type ions or N-type ions), and forming a conductive loop, which serves as the heating resistor layer 4, as shown in fig. 4 c.
Step 4), removing the photoresist 2, making an insulating material with a high thermal expansion coefficient on the upper layer of the heating resistor layer 4, and forming a first structural layer 6 by photoetching and etching or liftoff, as shown in fig. 4 d.
And 5) etching the bottom of the substrate 1, and leaving high-resistance silicon with a set thickness as a second structural layer 7.
And 6) carrying out front patterned etching on the upper part of the substrate 1 according to the pre-designed MEMS driving arm shape.
And finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 5) and the step 6) can be interchanged.
Example 3
As shown in fig. 5, the present embodiment is implemented by using a multiple-time ion doping process on a bare silicon wafer, and the deep silicon etching stop layer 8 formed by using a P-type ion doping region in the high-resistance silicon substrate 1 is etched to the deep silicon etching stop layer 8 when the second structure layer 7 is formed by using a KOH or TMAH wet etching process on the silicon substrate 1, so that an etching self-stop phenomenon occurs. Compared with the expensive price of an SOI silicon wafer, the thickness of the second structure layer 7 can be accurately controlled on the bare silicon wafer by adjusting the depth of the N-type ion doped region, and the device cost is reduced.
A method for manufacturing an electrothermal MEMS driving arm, which at least comprises a heating resistance layer 4, a first structural layer 6, a second structural layer 7, and an insulating layer 5 between the first structural layer 6 and the second structural layer 7, is characterized by comprising the following steps.
Step 1), selecting high-resistance silicon as a substrate 1.
And step 2), patterning the substrate 1 (i.e. coating photoresist on the substrate 1 and then performing photoetching), and forming a mask pattern as a P-type ion doping region, as shown in fig. 5 a.
Wherein, the step 2) is an optional step, namely after the patterning, the P-type ion doped region is doped in the step 3); without patterning, it is the surface of the substrate 1 that is doped in step 3).
And 3) carrying out P-type ion heavy doping on the surface of the substrate 1 or the P-type ion doping area by using an injection method or a diffusion method to form a deep silicon etching stop layer 8, wherein the deep silicon etching stop layer 8 is used as a second structural layer 7, as shown in FIG. 5 b.
And 4) masking and photoetching are carried out on the deep silicon etching stop layer 8 (namely, the photoresist 2 is uniformly coated on the etching stop layer 8 and then exposed and developed), and an N-type ion doped region is reserved, as shown in figure 5 c.
And 5) doping N-type ions into the P-type ion doping area according to the pre-designed conductive loop pattern 3 to form N-type silicon, wherein the N-type silicon is used as the heating resistance layer 4, as shown in FIG. 5 d.
Step 6), remove the mask (i.e. remove the photoresist 2), as shown in fig. 5e, make insulating material on the heating resistor layer 4 (for example: a SiO2 layer is deposited) as the insulating layer 5, as shown in fig. 5 f. At this time, Via holes and metal leads can be formed in the same manner as in step 4) of example 1.
Step 7), a material with a high thermal expansion coefficient is manufactured on the insulating layer 5 (for example: depositing a metallic aluminum film) as the first structural layer 6, as shown in fig. 5 g.
Step 8), the bottom of the substrate 1 is wet etched to the deep silicon etch stop layer 8 using KOH or TMAH.
And 9) carrying out front patterned etching on the upper part of the substrate 1 according to the pre-designed MEMS driving arm shape.
And finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 8) and the step 9) can be interchanged, as shown in FIG. 5 h.
When the electrothermal MEMS driving arm is applied, the voltage of the heating resistance layer 4 is higher than that of the deep silicon etching stop layer 8, so that the formed PN junction is reversely biased.
The material of the substrate 1 may be high-resistance silicon, P-type silicon, or N-type silicon. When the substrate 1 is P-type silicon, the doping concentration is low.
Furthermore, the deep silicon etch stop layer 8 formed in step 2) and step 3) may be epitaxially grown on the upper layer of the substrate 1, as shown in fig. 5 i.
Example 4
As shown in fig. 6, the present embodiment is different from embodiment 3 in that the deep silicon etching stopper layer 8 is used as both the second structure layer 7 and the heating resistor layer 4, which is simpler than that of embodiment 3.
A method for manufacturing an electrothermal MEMS driving arm, which at least comprises a heating resistance layer 4, a first structural layer 6, a second structural layer 7, and an insulating layer 5 between the first structural layer 6 and the second structural layer 7, is characterized by comprising the following steps.
Step 1), selecting high-resistance silicon as a substrate 1.
And step 2), patterning the substrate 1 (i.e. coating photoresist on the substrate 1 and then performing photoetching), and forming a mask pattern as a P-type ion doping region, as shown in fig. 6 a.
Wherein, the step 2) is an optional step, namely after the patterning, the P-type ion doped region is doped in the step 3); without patterning, it is the surface of the substrate 1 that is doped in step 3).
And 3) carrying out P-type ion heavy doping on the surface of the substrate 1 or the P-type ion doping area by using an injection method or a diffusion method to form a deep silicon etching stop layer 8, wherein the deep silicon etching stop layer 8 is used as the second structure layer 7 and also used as the heating resistor layer 4, as shown in FIG. 6 b.
Step 4), removing the mask (i.e. removing the photoresist 2), and forming an insulating material (for example: a SiO2 layer is deposited) as the insulating layer 5, as shown in fig. 6 c. At this time, Via holes and metal leads can be formed in the same manner as in step 4) of example 1.
Step 5), manufacturing a material with a high thermal expansion coefficient (for example: depositing a metallic aluminum film) as the first structural layer 6, as shown in fig. 6 d.
Step 6), etching the bottom of the substrate 1 to the heating resistor layer 4.
And 7) carrying out front patterned etching on the upper part of the substrate 1 according to the pre-designed MEMS driving arm shape.
Finally releasing the electrothermal MEMS driving arm to complete the manufacture of the electrothermal MEMS driving arm, wherein step 6) and step 7) can be interchanged, as shown in FIG. 6 e.
The material of the substrate 1 may be high-resistance silicon, P-type silicon, or N-type silicon. When the substrate 1 is N-type silicon, the voltage of the substrate 1 must be higher than that of the deep silicon etching stop layer 8, so that the formed PN junction is reversely biased.
Example 5
This embodiment is different from embodiment 3 in that the insulating layer 5 is not provided.
A method for manufacturing an electrothermal MEMS driving arm, which at least comprises a heating resistor layer 4, a first structural layer 6 and a second structural layer 7, is characterized by comprising the following steps.
Step 1), selecting high-resistance silicon as a substrate 1.
And step 2), patterning the substrate 1 (i.e. coating photoresist on the substrate 1 and then performing photoetching) to form a mask pattern as a P-type ion doped region, as shown in fig. 7 a.
Wherein, the step 2) is an optional step, namely after the patterning, the P-type ion doped region is doped in the step 3); without patterning, it is the surface of the substrate 1 that is doped in step 3).
And step 3), carrying out P-type ion heavy doping on the surface of the substrate 1 or the P-type ion doping area by using an injection method or a diffusion method, and forming a deep silicon etching stop layer 8 as a second structural layer 7, as shown in fig. 7 b.
And 4) masking and photoetching are carried out on the deep silicon etching stop layer 8, and an N-type ion doped region is reserved, as shown in figure 7 c.
And 5) doping N-type ions into the P-type ion doping area according to the pre-designed conductive loop pattern 3 to form N-type silicon, wherein the N-type silicon is used as the heating resistance layer 4, as shown in FIG. 7 d.
Step 6), an insulating material with a high thermal expansion coefficient is made as the first structural layer 6 on top of the heating resistor layer 4, as shown in fig. 7 e.
Step 7), etching the bottom of the substrate 1 to the deep silicon etching stop layer 8.
And 8) carrying out front patterned etching on the upper part of the substrate 1 according to the pre-designed MEMS driving arm shape.
Finally releasing the electrothermal MEMS driving arm to complete the manufacture of the electrothermal MEMS driving arm, and step 7) and step 8) can be interchanged, as shown in FIG. 7 f.
When the electrothermal MEMS driving arm is applied, the voltage of the heating resistance layer 4 is higher than that of the deep silicon etching stop layer 8, so that the formed PN junction is reversely biased.
The material of the substrate 1 may be high-resistance silicon, P-type silicon, or N-type silicon. When the substrate 1 is P-type silicon, the doping concentration is low.
Example 6
This embodiment is different from embodiment 4 in that the insulating layer 5 is not provided.
A method for manufacturing an electrothermal MEMS driving arm, which at least comprises a heating resistor layer 4, a first structural layer 6 and a second structural layer 7, is characterized by comprising the following steps.
Step 1), selecting high-resistance silicon as a substrate 1.
And step 2), patterning the substrate 1 (i.e. coating photoresist on the substrate 1 and then performing photoetching), and forming a mask pattern as a P-type ion doping region, as shown in fig. 8 a.
Wherein, the step 2) is an optional step, namely after the patterning, the P-type ion doped region is doped in the step 3); without patterning, it is the surface of the substrate 1 that is doped in step 3).
And 3) carrying out P-type ion heavy doping on the P-type ion doping area by using an injection method or a diffusion method to form a deep silicon etching stop layer 8, wherein the deep silicon etching stop layer 8 is used as the second structure layer 7 and also used as the heating resistor layer 4, as shown in FIG. 8 b.
Step 4), the mask is removed (i.e. the photoresist 2 is removed), and an insulating material with a high thermal expansion coefficient is made on the upper layer of the heating resistor layer 4 as the first structural layer 6.
Step 5), etching the bottom of the substrate 1 to the heating resistor layer 4.
And 6), carrying out front patterned etching on the upper part of the substrate 1 according to the pre-designed shape of the MEMS driving arm, and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm.
The material of the substrate 1 may be high-resistance silicon, P-type silicon, or N-type silicon. When the substrate 1 is N-type silicon, the voltage of the substrate 1 must be higher than that of the deep silicon etching stop layer 8, so that the formed PN junction is reversely biased.
In the application, when the substrate 1 is etched in the step 8) in the embodiment 3), the step 6) in the embodiment 4), the step 7) in the embodiment 5) and the step 5) in the embodiment 6, the substrate 1 can be automatically stopped by using an electrochemical etching method, and can be an N-type substrate, a P-type substrate or high-resistance silicon substrate; when the substrate is of an N type, the upper silicon layer is of a P type, and a PN junction is formed; when the substrate is of a P type, the upper silicon layer is of an N type to form a PN junction; when the substrate is high-resistance silicon, the upper layer silicon can be N type or P type; and then, the substrate is etched in an electrochemical mode, and the etching is automatically stopped at the upper silicon layer.
Claims (15)
1. A method of manufacturing an electrothermal MEMS actuation arm comprising at least a heating resistive layer (4), a first structural layer (6), a second structural layer (7), an insulating layer (5) between the first structural layer (6) and the second structural layer (7), characterized by comprising the steps of:
step 1), selecting high-resistance silicon as a substrate (1);
step 2), patterning is carried out on the substrate (1) to form a mask of a pre-designed conductive circuit pattern (3);
step 3), doping the substrate (1) by using an injection method or a diffusion method to form a conductive loop, wherein the conductive loop is used as a heating resistance layer (4);
step 4), manufacturing an insulating material on the heating resistance layer (4) to be used as an insulating layer (5);
step 5), manufacturing a material with a high thermal expansion coefficient on the insulating layer (5) to be used as a first structural layer (6);
step 6), etching the bottom of the substrate (1), and leaving high-resistance silicon with a set thickness as a second structural layer (7);
step 7), carrying out front patterned etching on the upper part of the substrate (1) according to a pre-designed MEMS driving arm shape;
and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 6) and the step 7) can be interchanged.
2. A method for manufacturing an electrothermal MEMS driving arm, which at least comprises a heating resistance layer (4), a first structural layer (6) and a second structural layer (7), is characterized by comprising the following steps:
step 1), selecting high-resistance silicon as a substrate (1);
step 2), patterning is carried out on the substrate (1) to form a mask of a pre-designed conductive circuit pattern (3);
step 3), doping the substrate (1) by using an injection method or a diffusion method to form a conductive loop, wherein the conductive loop is used as a heating resistance layer (4);
step 4), manufacturing an insulating material with a high thermal expansion coefficient on the upper layer of the heating resistor layer (4) to be used as a first structural layer (6);
step 5), etching the bottom of the substrate (1), and leaving high-resistance silicon with a set thickness as a second structural layer (7);
step 6), carrying out front patterned etching on the upper part of the substrate (1) according to a pre-designed MEMS driving arm shape;
and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 5) and the step 6) can be interchanged.
3. A method of manufacturing an electrothermal MEMS actuation arm comprising at least a heating resistive layer (4), a first structural layer (6), a second structural layer (7), an insulating layer (5) between the first structural layer (6) and the second structural layer (7), characterized by comprising the steps of:
step 1), selecting high-resistance silicon as a substrate (1);
step 2), carrying out P-type ion heavy doping on the surface of the substrate (1) by using an injection method or a diffusion method to form a deep silicon etching stop layer (8) as a second structure layer (7);
step 3), masking and photoetching are carried out on the deep silicon etching stopping layer (8), and an N-type ion doping area is reserved;
step 4), doping N-type ions into the P-type ion doping area according to a pre-designed conductive loop pattern (3) to form N-type silicon serving as a heating resistance layer (4);
step 5), removing the mask, and manufacturing an insulating material on the heating resistance layer (4) to be used as an insulating layer (5);
step 6), manufacturing a material with a high thermal expansion coefficient on the insulating layer (5) to be used as a first structural layer (6);
step 7), etching the bottom of the substrate (1) to the deep silicon etching stop layer (8);
step 8), carrying out front patterned etching on the upper part of the substrate (1) according to a pre-designed MEMS driving arm shape;
and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 7) and the step 8) can be interchanged.
4. A method of manufacturing an electrothermal MEMS actuation arm comprising at least a heating resistive layer (4), a first structural layer (6), a second structural layer (7), an insulating layer (5) between the first structural layer (6) and the second structural layer (7), characterized by comprising the steps of:
step 1), selecting high-resistance silicon as a substrate (1);
step 2), carrying out P-type ion heavy doping on the surface of the substrate (1) by using an injection method or a diffusion method to form a deep silicon etching stopping layer (8), wherein the deep silicon etching stopping layer (8) is used as a second structural layer (7) and a heating resistance layer (4) at the same time;
step 3), removing the mask, and manufacturing an insulating material on the heating resistance layer (4) to be used as an insulating layer (5);
step 4), manufacturing a material with a high thermal expansion coefficient on the insulating layer (5) to be used as a first structural layer (6);
step 5), etching the bottom of the substrate (1) to the heating resistor layer (4);
step 6), carrying out front patterned etching on the upper part of the substrate (1) according to a pre-designed MEMS driving arm shape;
and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 5) and the step 6) can be interchanged.
5. A method for manufacturing an electrothermal MEMS driving arm, which at least comprises a heating resistance layer (4), a first structural layer (6) and a second structural layer (7), is characterized by comprising the following steps:
step 1), selecting high-resistance silicon as a substrate (1);
step 2), carrying out P-type ion heavy doping on the surface of the substrate (1) by using an injection method or a diffusion method to form a deep silicon etching stop layer (8) as a second structure layer (7);
step 3), masking and photoetching are carried out on the deep silicon etching stopping layer (8), and an N-type ion doping area is reserved;
step 4), doping N-type ions into the P-type ion doping area according to a pre-designed conductive loop pattern (3) to form N-type silicon serving as a heating resistance layer (4);
step 5), manufacturing an insulating material with a high thermal expansion coefficient on the upper layer of the heating resistor layer (4) to be used as a first structural layer (6);
step 6), etching the bottom of the substrate (1) to the deep silicon etching stop layer (8);
step 7), carrying out front patterned etching on the upper part of the substrate (1) according to a pre-designed MEMS driving arm shape;
and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm, wherein the step 6) and the step 7) can be interchanged.
6. A method for manufacturing an electrothermal MEMS driving arm, which at least comprises a heating resistance layer (4), a first structural layer (6) and a second structural layer (7), is characterized by comprising the following steps:
step 1), selecting high-resistance silicon as a substrate (1);
step 2), carrying out P-type ion heavy doping on the surface of the substrate (1) by using an injection method or a diffusion method to form a deep silicon etching stopping layer (8), wherein the deep silicon etching stopping layer (8) is used as a second structural layer (7) and a heating resistance layer (4) at the same time;
step 3), manufacturing an insulating material with a high thermal expansion coefficient on the upper layer of the heating resistor layer (4) to be used as a first structural layer (6);
step 4), etching the bottom of the substrate (1) to the heating resistor layer (4);
and step 5), carrying out front-side graphical etching on the upper part of the substrate (1) according to the pre-designed shape of the MEMS driving arm, and finally releasing the electrothermal MEMS driving arm to finish the manufacture of the electrothermal MEMS driving arm.
7. A method of fabricating an electrothermal MEMS actuating arm according to any one of claims 3 to 6, wherein the deep silicon etch stop layer (8) formed in step 2) is epitaxially grown on the upper layer of the substrate (1).
8. An electrothermal MEMS driving arm is characterized by further comprising a heating resistance layer (4) formed by doping part or the whole of the second structure layer (7).
9. An electrothermal MEMS actuating arm according to claim 8 further comprising an insulating layer (5), the insulating layer (5) being located above the heating resistor layer (4).
10. The electrothermal MEMS actuating arm according to claim 8, wherein the first structural layer (6) is metallic aluminum or polymer, and the second structural layer (7) is high resistance silicon or P-type silicon or N-type silicon.
11. The electrothermal MEMS actuating arm according to claim 8, wherein the driven element (9) is a micromirror or a micro-structured platform.
12. An electrothermal MEMS actuating arm according to claim 8 wherein the electrothermal MEMS actuating arm is a folded beam structure having the first structural layer (6) divided into three segments, each segment being located on a respective one of the three beams of the folded beam structure.
13. An electrothermal MEMS actuating arm according to claim 8 wherein the electrothermal MEMS actuating arm is a U-beam structure or a beam structure with bends.
14. The electrothermal MEMS actuating arm according to claim 8, wherein the first structural layer (6) on the electrothermal MEMS actuating arm is discontinuous.
15. An electrothermal MEMS drive arm according to claim 8 further comprising Via holes and metal leads connected to the heating resistor layer (4) through the Via holes.
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