CN113074917A - Micro-nano structure characteristic parameter measuring method and device based on Bessel beam defocusing scanning - Google Patents
Micro-nano structure characteristic parameter measuring method and device based on Bessel beam defocusing scanning Download PDFInfo
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Abstract
The invention discloses a micro-nano structure characteristic parameter measuring method and device based on Bessel beam defocusing scanning, wherein the device comprises an upper computer, a controller, a power supply module, a measuring module, an electric focusing translation table, an electric scanning translation table and a sample to be measured; the electric focusing translation table drives the measuring module to continuously move, the distance between the measuring module and the surface of the sample to be measured is changed, the state of the focused light spot imaging is continuously changed from defocusing to focusing to defocusing, and the surface image of the sample to be measured is shot in the moving process; the electric scanning translation stage is used for changing the measurement area of the surface of the sample to be measured; the measuring module realizes the surface imaging of the sample to be measured through Bessel light beams; the upper computer comprises a three-dimensional image stack distribution database corresponding to different micro-nano structure characteristic parameters, an image stack is formed by analyzing the surface image of the sample to be detected, and the image stack is compared with the database to determine the micro-nano structure characteristic parameters. The invention is non-contact measurement, does not damage the surface, has lower cost and better effect.
Description
Technical Field
The invention belongs to the technical field of test and measurement, and particularly relates to a micro-nano structure characteristic parameter measuring method and device based on Bessel beam defocusing scanning.
Background
With the development of nanotechnology, the use of micro-nano structures is receiving wide attention, and characteristic parameters of the micro-nano structures are one of the core indexes of processing. In order to ensure the performance of the micro-nano structure, the accurate measurement of characteristic parameters is an essential step.
At present, various instrument technologies can be used for characterizing micro-nano structure characteristic parameters, such as a scanning probe microscope, a scanning transmission/reflection electron microscope, a white light interferometer, an elastic light scattering technology and the like.
The scanning probe microscope can obtain the three-dimensional surface shape of the nano-scale resolution micro-nano structure through probe measurement, the measurement is accurate and reliable, but the cost is high, the influence of external noise is easy, the efficiency is low, and tens of seconds are often needed when measuring a 50 micron multiplied by 50 micron area, so that the technology is generally applied to laboratories to carry out high-precision characterization;
the scanning transmission/reflection electron microscope can obtain a high-resolution micro-nano structure image by taking electrons as media by utilizing the characteristic of short wavelength of the electrons, but the cost is higher and the use is inconvenient;
the white light interferometer can use a common microscopic imaging device to measure the three-dimensional surface shape of the structure through incoherent interference imaging, but the white light interferometer is influenced by the limit of optical diffraction, has low resolution and cannot accurately measure sub-wavelength-level transverse characteristic parameters;
the elastic light scattering technology uses a parallel light irradiation structure to measure the scattered light distribution of the structure, compares the scattered light distribution with the scattered light of an ideal structure, determines characteristic parameters, has low measurement cost and high precision, and is a commonly used method in the current semiconductor processing. But it measures the global average characteristic parameter and cannot reflect the local change of the structure.
The defocusing scanning technology is applied to the characterization research of micro-nano structure characteristic parameters in recent years, the characteristic parameters can be inverted by measuring the reflected light condition of a focused light beam, but when the surface position changes, the size of a light spot changes, and the measurement effect is influenced, so that the existing measurement technology is urgently needed to be improved, a novel micro-nano structure characteristic parameter measurement method and device are developed, the accurate and low-cost measurement of the characteristic parameters is realized, and a novel technology and tool is provided for micro-nano processing detection.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a method and a device for measuring micro-nano structure characteristic parameters based on Bessel beam defocusing scanning, aiming at the defects of the prior art, the method and the device are suitable for accurate and low-cost measurement of micro-nano structure characteristic parameters, and have wide application prospects in micro-nano structure detection.
In order to achieve the technical purpose, the technical scheme adopted by the invention is as follows:
a micro-nano structure characteristic parameter measuring device based on Bessel light beam defocusing scanning comprises an upper computer, a controller, a power supply module, a measuring module, an electric focusing translation table, an electric scanning translation table and a sample to be measured;
the measuring module is arranged on the electric focusing translation table, the electric focusing translation table can drive the measuring module to move up and down continuously, the distance between the measuring module and the surface of the sample to be measured is changed, the imaging state of a focusing light spot is continuously changed from defocusing to focusing to defocusing, and the image of the surface of the sample to be measured is shot in real time through an imaging detector during movement;
the electric scanning translation stage is used for changing the measurement area of the surface of the sample to be measured;
the measuring module realizes the surface imaging of the sample to be measured through Bessel light beams;
the upper computer comprises three-dimensional image stack distribution databases corresponding to different micro-nano structure characteristic parameters, an image stack is formed by analyzing a surface image of a sample to be detected, which is shot in real time by an imaging detector, and the image stack is compared with the three-dimensional image stack distribution database to determine the micro-nano structure characteristic parameters;
the electric focusing translation stage and the electric scanning translation stage are driven by closed-loop stepping motors;
the upper computer controls the electric focusing translation table and the electric scanning translation table through the controller;
the power module supplies power to the device.
In order to optimize the technical scheme, the specific measures adopted further comprise:
the measuring module comprises a laser submodule, a semi-transparent semi-reflective prism, an imaging detector and a microscope objective;
the laser sub-module comprises a semiconductor laser, a conical lens, a 45-degree spectroscope and a laser intensity detector;
the semiconductor laser generates a light beam, the light beam becomes a Bessel light beam through the conical lens, the Bessel light beam irradiates the 45-degree spectroscope, part of the light beam is reflected to the laser intensity detector, the change of the laser intensity is measured in real time, and part of the light beam is transmitted to the semi-transparent semi-reflective prism;
the laser beam is reflected to the microscope objective through the semi-transparent semi-reflective prism and focused to the surface of a sample to be measured;
the focused light spot on the surface of the sample to be detected is imaged by the imaging detector through the microscope objective and the semi-transparent semi-reflective prism.
The semiconductor laser is a laser diode, and the wavelength of the laser diode is visible light;
the cone lens is made of dichroic materials, and can convert light beams emitted by the laser into Bessel light, wherein the wavelength range is 400-700nm visible light range;
the transmission reflectance of the 45-degree spectroscope is 1: 1;
the laser light intensity detector uses a photocell as a detection element.
The imaging detector 43 described above uses a CMOS area array detector.
The controller comprises a microprocessor, a laser constant current driving module, a current analog-to-digital conversion module and a stepping motor driver;
the microprocessor is connected with the upper computer through a serial port;
the microprocessor provides pulses and direction signals for controlling the electric focusing translation stage and the electric scanning translation stage through a stepping motor driver;
the microprocessor amplifies the photocurrent of the laser light intensity detector through the current analog-to-digital conversion module and performs analog-to-digital conversion;
the laser constant current driving module is used for controlling the semiconductor laser.
The electric focusing translation stage and the electric scanning translation stage are both in a screw guide rail structure and are driven by a closed-loop stepping motor, and a brake device is additionally arranged on the stepping motor of the electric focusing translation stage;
and the electric focusing translation stage and the electric scanning translation stage are both provided with limit and zero position switches and are controlled by the controller.
The above-mentioned host computer includes: the system comprises a communication module for serial port communication with a controller, an image acquisition module for acquiring an image of an imaging detector, an image processing module for extracting light intensity distribution and comparing the light intensity distribution with a database, and a file module for storing data and configuration parameters.
A micro-nano structure characteristic parameter measuring method based on Bessel beam out-of-focus scanning comprises the following steps:
1) simulating the distribution of reflected light when different characteristic parameters of the micro-nano structure are simulated by using an experimental measurement or finite element method and a time domain finite difference method, continuously changing the distance between a focusing light spot and the surface of a sample to be tested during simulation, shooting the surface image of the sample to be tested in real time through an imaging detector, analyzing the image to form an image stack, and constructing a three-dimensional image stack distribution database corresponding to the different characteristic parameters of the micro-nano structure;
2) the power supply module supplies power, the upper computer sends a command to the controller, and the electric scanning translation table and the electric focusing translation table are controlled to be at the designated positions;
3) the semiconductor laser in the measuring module generates a light beam, and the laser light intensity detector measures the brightness of the outgoing light beam of the laser and transmits the brightness to the upper computer in real time;
4) the electric focusing translation table moves the measurement module, searches a focusing position from top to bottom, and moves 10 micrometers downwards after the searching;
5) moving an imaging detector of the measuring module from bottom to top, and shooting a pair of images at intervals of 2 microns;
6) searching micro-nano structure characteristic parameters which are most consistent with the shot light field distribution in a pre-manufactured database by the upper computer, displaying a measurement result on a screen and storing data;
7) the upper computer controls the electric scanning translation table to move the sample to be measured to different positions, and the steps from 2) to 7) are repeated to obtain the micro-nano structure characteristic parameters at different sampling points, and whether the machining quality meets the precision requirement is determined.
The invention has the following beneficial effects:
according to the invention, three-dimensional reflected light field distribution of a focused light spot in different defocusing states is obtained through a defocusing scanning technology, and then a micro-nano structure characteristic parameter is searched through a database, so that the method is suitable for measuring the sub-wavelength scale micro-nano structure characteristic parameter. Compared with the traditional scanning probe technology, the method has the advantages that non-contact measurement is adopted, the surface is not damaged, and the cost is low. Compared with the traditional two-dimensional light field measurement technology, the method has higher measurement precision by comparing the three-dimensional light field, and is expected to be widely applied to optical processing enterprises. Compared with the traditional defocusing scanning technology of the focused light beam, the method uses the Bessel light beam, the cross section of the focused light beam is not influenced by the surface position, and the effect is better.
Drawings
Fig. 1 is a schematic structural diagram of a micro-nano structure characteristic parameter measuring device based on Bessel beam defocusing scanning according to an embodiment of the application.
Fig. 2 is a schematic structural diagram of a measurement module according to an embodiment of the present application.
Fig. 3 is a schematic structural diagram of a laser submodule according to an embodiment of the present application.
In the figure: 1-an upper computer, 2-a controller, 3-a power supply module, 4-a measuring module, 5-an electric focusing translation table, 6-a sample to be measured, 7-an electric scanning translation table, 41-a laser submodule, 42-a semi-transparent semi-reflecting prism, 43-an imaging detector, 44-a microscope objective, 411-a semiconductor laser, 412-a cone lens, 413-45 degrees of spectroscopes and 414-a laser light intensity detector.
Detailed Description
Embodiments of the present invention are described in further detail below with reference to the accompanying drawings.
Referring to fig. 1, an embodiment of the present application provides a micro-nano structure characteristic parameter measurement device based on defocus scanning, the device includes: the device comprises an upper computer 1, a controller 2, a power module 3, a measuring module 4, an electric focusing translation table 5, a sample to be measured 6 and an electric scanning translation table 7.
Referring to fig. 2, the measuring module 4 includes a laser sub-module 41, a half-mirror 42, an imaging detector 3, and a microscope objective 44.
Referring to fig. 3, the laser sub-module 41 includes a semiconductor laser 411, an axicon lens 412, a 45 ° beam splitter 413, and a laser intensity detector 414.
In an embodiment, the semiconductor laser 411 generates laser light with a wavelength of visible light or near-infrared band, the laser light becomes a Bessel light beam through the conical lens 412, the Bessel light beam enters the 45 ° spectroscope 413, a part of the light beam is reflected to the laser light intensity detector 414, converted into a voltage signal, and connected to the controller 2, the other part of the light beam is transmitted to the half-transmitting and half-reflecting prism 42, reflected to the microscope objective 44 and focused on the surface of the sample 6 to be measured, the focused Bessel light reflected includes information of the micro-nano structure, and the information is collected by the microscope objective 44, and is measured by the imaging detector after passing through the half-transmitting and.
The reflected light on the surface of the sample contains micro-nano structure parameter information, and the light intensity distribution of the cross section of the Bessel light beam is kept unchanged in a section of propagation distance, so that the surface position of the sample does not influence the scattering condition of the light beam by the micro-nano structure, and the sample has a better effect compared with the traditional Gaussian light beam.
In the embodiment, the measuring module 4 is mounted on the electric focusing translation stage 5 and can move in the direction vertical to the z axis, so that the laser light spot continuously changes from defocusing to focusing to defocusing, an image shot by the imaging detector is collected in real time during movement, an image stack is formed, and the image stack is compared with a pre-manufactured image stack database to determine the micro-nano structure characteristic parameters.
In the embodiment, the upper computer 1 uses a Windows operating device, self-developed equipment control software, and the software is written by using C # language, including: the system comprises a communication module for serial port communication with a controller, an image acquisition module for acquiring an image of an imaging detector, an image processing module for extracting light intensity distribution and comparing the light intensity distribution with a database, and a file module for storing data and configuration parameters, wherein the image processing module improves the customization development efficiency by calling Matlab.
In the embodiment, the upper computer 1 stores a three-dimensional image stack distribution database corresponding to different micro-nano structure characteristic parameters. The database can be generated through numerical simulation by a finite element method and a time domain finite difference method, and can also be obtained by actually measuring a micro-nano structure with known characteristic parameters.
In an embodiment, the controller 2 includes a microprocessor, a laser constant current driving module, a current analog-to-digital conversion module, and a stepping motor driver.
In an embodiment, the microprocessor uses an STM32 single chip microcomputer, is connected with the upper computer through a serial port, provides pulses and direction signals to the stepping motor driver, and is used for controlling the electric focusing translation stage and the electric scanning translation stage to amplify and perform analog-to-digital conversion on the photocurrent of the laser light intensity detector.
In an embodiment, the laser constant current driving module is used for controlling a semiconductor laser.
In an embodiment, the stepper motor driver is closed-loop controlled to receive the direction and pulse signals and the position encoder signal.
In the embodiment, the power module 3 uses a switching power supply to input 220V alternating current and output two paths of power supplies of 24V and 5V, wherein 24V voltage is used for a motor driving module and a brake signal, 5V voltage is used for a microprocessor, a stepping motor driver and a laser constant current driving module, and input alternating current signals can be changed according to different national and regional standards.
In an embodiment, the measuring module 4 includes a semiconductor laser 411, a cone lens 412, a 45 ° beam splitter 413, a laser intensity detector 414, a half-mirror prism 42, an imaging detector 43, and a microscope objective 44.
In an embodiment, the semiconductor laser 411 uses a low power laser diode, and the wavelength is visible light.
In an embodiment, the cone lens 412 is made of a dichroic material, and can convert the laser emergent beam into Bessel light with a wavelength range of 400-700 nm.
In one embodiment, the 45 ° beam splitter 413 has a transmission to reflection ratio of about 1: 1.
In one embodiment, the laser light intensity detector 414 uses a photocell as the detection element.
In an embodiment, the transflective prism 42 has a transmittance to reflectance ratio of 50:50 and is insensitive to polarization.
In an embodiment, the imaging detector 43 uses a CMOS area array detector, and generally uses a USB, gigabit network or CameraLink interface, a matching acquisition card needs to be provided in the upper computer, a common network card may be used when the gigabit network is used, and a corresponding CameraLink acquisition card needs to be provided when the CameraLink interface is used.
In embodiments, the microscope objective 44 focuses the laser beam and collects the reflected beam, and has a high numerical aperture, typically greater than 0.6, and a working distance of less than 4 mm.
In the embodiment, the electric focusing translation stage 5 and the electric scanning translation stage 7 are both in a screw guide rail structure and are driven by a closed-loop stepping motor, and a brake device is additionally arranged on the stepping motor of the electric focusing translation stage. And the two translation tables are provided with limit and zero position switches and are controlled by the controller 2.
In an embodiment, the stroke of the electric scanning translation stage 7 is 50mm or more.
In an embodiment, the optical element 6 to be measured is a micro-nano structure with characteristic parameters of sub-wavelength level.
The measuring steps of the invention are as follows:
1) simulating the distribution of reflected light when different characteristic parameters of the micro-nano structure are simulated by using an experimental measurement or finite element method and a time domain finite difference method, continuously changing the distance between a focusing light spot and the surface of a sample to be tested during simulation, shooting the surface image of the sample to be tested in real time through an imaging detector, analyzing the image to form an image stack, and constructing a three-dimensional image stack distribution database corresponding to the different characteristic parameters of the micro-nano structure;
2) the power supply module supplies power, the upper computer sends a command to the controller, and the electric scanning translation table and the electric focusing translation table are controlled to be at the designated positions;
3) the semiconductor laser in the measuring module generates a light beam, and the laser light intensity detector measures the brightness of the outgoing light beam of the laser and transmits the brightness to the upper computer in real time;
4) the electric focusing translation table moves the measurement module, searches a focusing position from top to bottom, and moves 10 micrometers downwards after the searching;
5) moving an imaging detector of the measuring module from bottom to top, and shooting a pair of images at intervals of 2 microns;
6) searching micro-nano structure characteristic parameters which are most consistent with the shot light field distribution in a pre-manufactured database by the upper computer, displaying a measurement result on a screen and storing data;
7) the upper computer controls the electric scanning translation table to move the sample to be measured to different positions, and the steps from 2) to 7) are repeated to obtain the micro-nano structure characteristic parameters at different sampling points, and whether the machining quality meets the precision requirement is determined.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may be made by those skilled in the art without departing from the principle of the invention.
Claims (8)
1. A micro-nano structure characteristic parameter measuring device based on Bessel light beam defocusing scanning is characterized by comprising an upper computer, a controller, a power supply module, a measuring module, an electric focusing translation table, an electric scanning translation table and a sample to be measured;
the measuring module is arranged on the electric focusing translation table, the electric focusing translation table can drive the measuring module to move up and down continuously, the distance between the measuring module and the surface of the sample to be measured is changed, the imaging state of a focusing light spot is continuously changed from defocusing to focusing to defocusing, and the image of the surface of the sample to be measured is shot in real time through an imaging detector during movement;
the electric scanning translation stage is used for changing the measurement area of the surface of the sample to be measured;
the measuring module realizes the surface imaging of the sample to be measured through Bessel light beams;
the upper computer comprises three-dimensional image stack distribution databases corresponding to different micro-nano structure characteristic parameters, an image stack is formed by analyzing a surface image of a sample to be detected, which is shot in real time by an imaging detector, and the image stack is compared with the three-dimensional image stack distribution database to determine the micro-nano structure characteristic parameters;
the electric focusing translation stage and the electric scanning translation stage are driven by closed-loop stepping motors;
the upper computer controls the electric focusing translation table and the electric scanning translation table through the controller;
the power module supplies power to the device.
2. The micro-nano structure characteristic parameter measuring device based on Bessel beam out-of-focus scanning is characterized in that the measuring module comprises a laser submodule, a semi-transparent semi-reflective prism, an imaging detector and a microscope objective;
the laser sub-module comprises a semiconductor laser, a conical lens, a 45-degree spectroscope and a laser intensity detector;
the semiconductor laser generates a light beam, the light beam becomes a Bessel light beam through the conical lens, the Bessel light beam irradiates the 45-degree spectroscope, part of the light beam is reflected to the laser intensity detector, the change of the laser intensity is measured in real time, and part of the light beam is transmitted to the semi-transparent semi-reflective prism;
the laser beam is reflected to the microscope objective through the semi-transparent semi-reflective prism and focused to the surface of a sample to be measured;
the focused light spot on the surface of the sample to be detected is imaged by the imaging detector through the microscope objective and the semi-transparent semi-reflective prism.
3. The micro-nano structure characteristic parameter measuring device based on Bessel beam defocusing scanning is characterized in that the semiconductor laser is a laser diode, and the wavelength of the semiconductor laser is visible light;
the cone lens is made of dichroic materials, and can convert light beams emitted by the laser into Bessel light, wherein the wavelength range is 400-700nm visible light range;
the transmission reflectance of the 45-degree spectroscope is 1: 1;
the laser light intensity detector uses a photocell as a detection element.
4. The micro-nano structure characteristic parameter measuring device based on Bessel beam out-of-focus scanning according to claim 2, wherein the imaging detector 43 uses a CMOS area array detector.
5. The micro-nano structure characteristic parameter measuring device based on Bessel beam defocusing scanning is characterized in that the controller comprises a microprocessor, a laser constant current driving module, a current analog-to-digital conversion module and a stepping motor driver;
the microprocessor is connected with the upper computer through a serial port;
the microprocessor provides pulses and direction signals for controlling the electric focusing translation stage and the electric scanning translation stage through a stepping motor driver;
the microprocessor amplifies the photocurrent of the laser light intensity detector through the current analog-to-digital conversion module and performs analog-to-digital conversion;
the laser constant current driving module is used for controlling the semiconductor laser.
6. The micro-nano structure characteristic parameter measuring device based on Bessel beam defocusing scanning is characterized in that the electric focusing translation stage and the electric scanning translation stage are both in a screw guide rail structure and are driven by a closed-loop stepping motor, and a brake device is additionally arranged on the stepping motor of the electric focusing translation stage;
and the electric focusing translation stage and the electric scanning translation stage are both provided with limit and zero position switches and are controlled by the controller.
7. The micro-nano structure characteristic parameter measuring device based on Bessel beam out-of-focus scanning according to claim 1, wherein the upper computer comprises: the system comprises a communication module for serial port communication with a controller, an image acquisition module for acquiring an image of an imaging detector, an image processing module for extracting light intensity distribution and comparing the light intensity distribution with a database, and a file module for storing data and configuration parameters.
8. The method for measuring the micro-nano structure characteristic parameters based on Bessel beam out-of-focus scanning of the micro-nano structure characteristic parameter measuring device based on Bessel beam out-of-focus scanning according to any one of claims 1 to 7, comprising the following steps:
1) simulating the distribution of reflected light when different characteristic parameters of the micro-nano structure are simulated by using an experimental measurement or finite element method and a time domain finite difference method, continuously changing the distance between a focusing light spot and the surface of a sample to be tested during simulation, shooting the surface image of the sample to be tested in real time through an imaging detector, analyzing the image to form an image stack, and constructing a three-dimensional image stack distribution database corresponding to the different characteristic parameters of the micro-nano structure;
2) the power supply module supplies power, the upper computer sends a command to the controller, and the electric scanning translation table and the electric focusing translation table are controlled to be at the designated positions;
3) the semiconductor laser in the measuring module generates a light beam, and the laser light intensity detector measures the brightness of the outgoing light beam of the laser and transmits the brightness to the upper computer in real time;
4) the electric focusing translation table moves the measurement module, searches a focusing position from top to bottom, and moves 10 micrometers downwards after the searching;
5) moving an imaging detector of the measuring module from bottom to top, and shooting a pair of images at intervals of 2 microns;
6) searching micro-nano structure characteristic parameters which are most consistent with the shot light field distribution in a pre-manufactured database by the upper computer, displaying a measurement result on a screen and storing data;
7) the upper computer controls the electric scanning translation table to move the sample to be measured to different positions, and the steps from 2) to 7) are repeated to obtain the micro-nano structure characteristic parameters at different sampling points, and whether the machining quality meets the precision requirement is determined.
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