CN113030675B - Non-back-gold MOSFET wafer testing method based on near particle method - Google Patents
Non-back-gold MOSFET wafer testing method based on near particle method Download PDFInfo
- Publication number
- CN113030675B CN113030675B CN202110217703.XA CN202110217703A CN113030675B CN 113030675 B CN113030675 B CN 113030675B CN 202110217703 A CN202110217703 A CN 202110217703A CN 113030675 B CN113030675 B CN 113030675B
- Authority
- CN
- China
- Prior art keywords
- particles
- testing
- mosfet
- particle
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
A method for testing a metal-free MOSFET wafer based on a near particle method comprises the following steps: judging whether the basic functions of the N detected MOSFET particles are normal or not; selecting two particles which have normal functions and are closest to the detected particles as auxiliary particles; loading a saturation starting voltage on the grid electrodes of the two auxiliary particles to make the two auxiliary particles in saturation conduction; respectively connecting the measuring end and the loading end of the drain electrode of the measured particle to the source electrodes of the two auxiliary particles; and testing large-current parameters Rdson and Vfsd of the MOSFET wafer without the back gold. The invention solves the problem that the existing testing method has high requirements on the flatness and the surface contact resistance of the objective table, can improve the measurement precision of the large current parameters of Rdson and Vfsd of the MOSFET wafer without the back gold, and effectively reduces the measurement error by a simpler method.
Description
Technical Field
The invention belongs to the field of discrete device testing, and particularly relates to a non-back-gold MOSFET wafer testing method based on a near particle method.
Background
The drain measurement terminal of a normal MOSFET is connected to the stage, and even if the internal resistance of the stage is low, the error is negligible, and the equivalent resistance in the drain substrate current path will add to the value of the Rdson (on resistance) of the device under test, so that the drain loop is no longer a standard Kelvin connection, which results in a large amount of measurement error. The measurement error is unstable, and is small when the bottom of the measured particle is in good contact, and is large when the bottom of the measured particle and the nearby particles are in poor contact. In order to reduce errors, the wafer needs to be attached to the CHUNK stage as closely as possible, and the gap in the middle is as small as possible, so that the path length from the common drain measurement terminal to the device under test can be reduced, the resistance of the non-Kelvin connection part can be reduced, and when the additional resistance caused by the drain is far smaller than Rdson (on resistance), the test result is credible, and the test method puts high requirements on the flatness and surface contact resistance of the stage.
At the end of the MOSFET wafer process, thinning and gold-back processes are typically required to enter the wafer test flow, because without thinning and gold-back, the common drain has a large resistance and cannot load and test signals from the stage-to-substrate contact, but in some cases, it is necessary to perform test evaluation on the wafer without thinning or gold-back to determine whether the following processes are necessary, and thus an effective method is not available.
Disclosure of Invention
The invention aims to solve the problem that the high-current parameters of the non-thinned backless MOSFET wafer are difficult to measure with high precision in the prior art, and provides a backless MOSFET wafer testing method based on a near particle method, which can improve the measurement precision of the Rdson and Vfsd high-current parameters of the backless MOSFET wafer and effectively reduce the testing error.
In order to achieve the purpose, the invention has the following technical scheme:
a method for testing a non-gold-backed MOSFET wafer based on a near particle method comprises the following steps:
-determining whether the basic function of the N MOSFET particles under test is normal;
-selecting as auxiliary particles two particles that function normally and are closest to the particle to be measured;
-applying a saturation turn-on voltage to the gates of the two auxiliary particles to make them conduct in saturation;
connecting the measuring end and the loading end of the drain electrode of the measured particle to the source electrodes of the two auxiliary particles respectively;
testing large current parameters Rdson, vfsd of the metal-free MOSFET wafer.
Preferably, whether the basic functions of the N MOSFET particles to be tested are normal or not is judged by testing the small current parameter.
Preferably, the small current parameters include VTH and Igss.
Preferably, the number of the tested particles and the number of the auxiliary particles are consistent with the number of the circuit arms of the test station.
Preferably, the gate drive voltage is kept at one time of the MOSFET gate turn-on voltage, i.e. in a saturated conducting state.
Preferably, the starting voltage is divided into a high opening voltage and a low opening voltage, the high opening voltage is +/-5V, and the low opening voltage is +/-2V.
Preferably, if the particle nearest to the detected particle is an abnormal particle, the next closest particle is selected as the auxiliary particle.
Compared with the prior art, the invention has the following beneficial effects: the method comprises the steps of selecting two particles which have normal functions and are closest to the measured particles as auxiliary particles, enabling the auxiliary particles to be in saturated conduction, and respectively connecting the measuring end and the loading end of the drain electrode of the measured particles to the source electrodes of the two auxiliary particles to test the large-current parameters Rdson and Vfsd.
Drawings
FIG. 1 is a flow chart of a method for testing a metal-free MOSFET wafer based on a near-particle method according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a non-gold-backed MOSFET wafer test circuit based on the near particle method according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples.
Referring to fig. 1, a method for testing a non-gold-backed MOSFET wafer based on a near particle method includes the following steps:
s101, judging that the basic functions of the N MOSFET particles to be tested are normal by testing small current parameters such as VTH, igss and the like;
s102, selecting two particles which have normal functions and are closest to the detected particles as auxiliary particles;
s103, loading a saturation starting voltage on the grid electrodes of the two auxiliary particles to enable the grid electrodes to be in saturation conduction;
s104, respectively connecting the measuring end and the loading end of the drain electrode of the measured particle to the source electrodes of the two auxiliary particles;
and S105, respectively designing related test schemes according to the measured large current parameters Rdson and Vfsd.
The number of the tested particles and the number of the auxiliary particles are consistent with the number of the circuit arms of the test station.
The gate drive voltage is kept at one time of the MOSFET gate turn-on voltage, and the MOSFET can be in a saturated conduction state.
If the nearest particle of the detected particle is an abnormal particle, the next nearest particle can be selected as the auxiliary particle.
The starting voltage is divided into a high opening voltage and a low opening voltage, the high opening voltage is +/-5V, and the low opening voltage is +/-2V.
Example 1
Referring to fig. 2, the Rdson (on-resistance) parameter of the MOSFET wafer is tested by using the testing method of the present invention, which is described by taking 3SITE parallel test as an example, and specifically includes the following steps:
s201: when the detected particles are Die3, enabling Die4 and Die2 to serve as auxiliary particles;
s202: setting Source3 to be 0V and setting Gate3 to be the starting voltage of the MOSFET wafer;
s203: adding a saturation starting voltage to the Source of the Gate4 relative to the Die4 to make the Die4 saturated and conducted;
s204: adding a saturation starting voltage to the Source of the Gate2 relative to the Die2 to make the Die2 saturated and conducted;
s205: applying a specified large current Ids from Force of Drain3 through Die 4;
s206: the sensor of Drain3 is connected to the Source of Die2, and the Vds with better precision is obtained by testing the pressure drop between the Sense of Drain3 and the Sense of Source 3;
s207: according to the formula
The value of Rdson (on resistance) is calculated.
The size of the saturated starting voltage is one time of the size of the starting voltage;
vds is the voltage measured between the grid electrode and the source electrode of the MOSFET;
and Ids is the current loaded between the grid electrode and the source electrode of the MOSFET.
Example 2
Referring to fig. 2, the parameter Vfsd of the MOSFET wafer tested by the testing method of the present invention is illustrated by taking a parallel 3SITE test as an example, and specifically includes the following steps:
s301: when the detected particles are Die3, enabling Die4 and Die2 to serve as auxiliary particles;
s302: source3 is set to 0V. Gate3 is set to 0V;
s303: adding a saturation starting voltage to the Source of the Gate4 relative to the Die4 to make the Die4 saturated and conducted;
s304: adding a saturation starting voltage to the Source of the Gate2 relative to the Die2 to make the Die2 be in saturation conduction;
s305: applying a specified large current Ids from Force of Drain3 through Die 4;
s306: the Sense of Drain3 is connected to the Source of Die2, and by testing the voltage drop between the Sense of Source3 and the Sense of Drain3, the Vsd with better precision is obtained, namely Vsd = Vfsd;
in summary, the testing method for the metal-free MOSFET wafer based on the near-particle method is feasible for testing Rdson (on-resistance) and Vfsd large-current parameters of the MOSFET wafer, effectively improves the testing precision, and reduces the testing error.
The above-mentioned embodiments are only preferred embodiments of the present invention, and are not intended to limit the technical solution of the present invention, and it should be understood by those skilled in the art that the technical solution can be modified and replaced by a plurality of simple modifications and replacements without departing from the spirit and principle of the present invention, and the modifications and replacements also fall into the protection scope covered by the claims.
Claims (6)
1. A method for testing a non-back-gold MOSFET wafer based on a near particle method is characterized by comprising the following steps:
-determining whether the basic functions of the N MOSFET particles under test are normal;
-selecting as auxiliary particles two particles that function normally and are closest to the particle to be measured;
-applying a saturation turn-on voltage to the gates of the two auxiliary particles to make them conduct in saturation;
keeping the grid driving voltage to be one time of the grid opening voltage of the MOSFET, namely, keeping the grid driving voltage in a saturated conduction state;
connecting the measuring end and the loading end of the drain electrode of the measured particle to the source electrodes of the two auxiliary particles respectively;
testing large current parameters Rdson and Vfsd of the metal-free MOSFET wafer;
a. when the detected particles are Die3, enabling Die4 and Die2 to serve as auxiliary particles;
setting Source3 to be 0V and setting Gate3 to be the starting voltage of the MOSFET wafer;
adding a saturation starting voltage to the Source of the Gate4 relative to the Die4 to make the Die4 saturated and conducted;
adding a saturation starting voltage to the Source of the Gate2 relative to the Die2 to make the Die2 saturated and conducted;
applying a specified large current Ids from Force of Drain3 through Die 4;
connecting the sensor of Drain3 to the Source of Die2, and testing the voltage drop between the Sense of Drain3 and the Sense of Source3 to obtain V with better precision ds ；
According to the formula
Calculating the value of Rdson;
the V is ds Is the voltage measured between the gate and source of the MOSFET;
said I ds The current loaded between the grid electrode and the source electrode of the MOSFET;
b. when the detected particles are Die3, enabling Die4 and Die2 to serve as auxiliary particles;
source3 is set to 0V, gate3 is set to 0V;
adding a saturation starting voltage to the Source of the Gate4 relative to the Die4 to make the Die4 saturated and conducted;
adding a saturation starting voltage to the Source of the Gate2 relative to the Die2 to make the Die2 be in saturation conduction;
applying a specified large current Ids from Force of Drain3 through Die 4;
by connecting the Sense of Drain3 to the Source of Die2, and testing the voltage drop between the Sense of Source3 and the Sense of Drain3, a Vsd with better accuracy is obtained, i.e., vsd = Vfsd.
2. The method for testing the non-gold-backed MOSFET wafer based on the near particle method as claimed in claim 1, wherein: and judging whether the basic functions of the N tested MOSFET particles are normal or not by testing the small current parameter.
3. The method for testing the metal-free MOSFET wafer based on the near particle method as claimed in claim 2, wherein: the small current parameters comprise VTH and Igss.
4. The method for testing the non-gold-backed MOSFET wafer based on the near particle method as claimed in claim 1, wherein: the number of the tested particles and the number of the auxiliary particles are consistent with the number of the circuit arms of the test station.
5. The method for testing the non-gold-backed MOSFET wafer based on the near particle method as claimed in claim 1, wherein: the starting voltage is divided into a high opening voltage and a low opening voltage, the high opening voltage is +/-5V, and the low opening voltage is +/-2V.
6. The method for testing the non-gold-backed MOSFET wafer based on the near particle method as claimed in claim 1, wherein: and if the particle closest to the detected particle is an abnormal particle, selecting the next closest particle as the auxiliary particle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110217703.XA CN113030675B (en) | 2021-02-26 | 2021-02-26 | Non-back-gold MOSFET wafer testing method based on near particle method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110217703.XA CN113030675B (en) | 2021-02-26 | 2021-02-26 | Non-back-gold MOSFET wafer testing method based on near particle method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113030675A CN113030675A (en) | 2021-06-25 |
| CN113030675B true CN113030675B (en) | 2023-03-24 |
Family
ID=76461773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110217703.XA Active CN113030675B (en) | 2021-02-26 | 2021-02-26 | Non-back-gold MOSFET wafer testing method based on near particle method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113030675B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117233569A (en) * | 2023-11-13 | 2023-12-15 | 成都高投芯未半导体有限公司 | Resistance measurement system, method and test equipment |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100940415B1 (en) * | 2007-12-03 | 2010-02-02 | 주식회사 동부하이텍 | On resistance test method for back-side-drain wafer |
| US9052281B2 (en) * | 2012-01-24 | 2015-06-09 | Purdue Research Foundation | Transistor-based particle detection systems and methods |
| CN105445635B (en) * | 2014-07-29 | 2017-05-17 | 华润赛美科微电子(深圳)有限公司 | Metal oxide semiconductor field effect transistor on-resistance measuring method |
| CN204649917U (en) * | 2015-04-02 | 2015-09-16 | 北京华峰测控技术有限公司 | A kind of measurement mechanism of MOSFET wafer conducting resistance |
| CN111337812A (en) * | 2020-04-20 | 2020-06-26 | 陕西三海测试技术开发有限责任公司 | MOSFET wafer proximity particle testing method and circuit |
-
2021
- 2021-02-26 CN CN202110217703.XA patent/CN113030675B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN113030675A (en) | 2021-06-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102338846B (en) | Method for evaluating reliability of GaN-based HEMT (High Electron Mobility Transistor) device | |
| CN105445635B (en) | Metal oxide semiconductor field effect transistor on-resistance measuring method | |
| CN101769964A (en) | Method, device and system for testing conducting resistance of packaged field-effect tube | |
| US7126359B2 (en) | Device monitor for RF and DC measurement | |
| CN103675459A (en) | Method for measuring conductor resistance in integrated circuit | |
| CN102253324B (en) | A kind of test structure of MOS device hot carrier's effect and method of testing | |
| CN111337812A (en) | MOSFET wafer proximity particle testing method and circuit | |
| CN101865971A (en) | Method and structure for testing semiconductor field effect transistor | |
| CN113030675B (en) | Non-back-gold MOSFET wafer testing method based on near particle method | |
| CN1948981A (en) | High speed Acceptable testing process for wafer | |
| CN101368990A (en) | Method for eliminating probe needle track bias | |
| US8000935B2 (en) | Diagnostic method for root-cause analysis of FET performance variation | |
| US20140354325A1 (en) | Semiconductor layout structure and testing method thereof | |
| CN108344936B (en) | Test method of power semiconductor device | |
| US20210156902A1 (en) | Semiconductor chip and circuit and method for electrically testing semiconductor chip | |
| CN101566667B (en) | MOS component testing method | |
| CN117648892A (en) | Method and system for dynamically adjusting aging test parameters by using AI | |
| CN113064041B (en) | Method and device for measuring on-resistance of field effect transistor | |
| CN113030676B (en) | Diode triode wafer testing method based on near particle method | |
| CN102074489B (en) | Method for testing field effect transistor (FET) grate drain capacitance under multi-bias points | |
| CN103837809A (en) | IC layout for testing MOSFET matching and test method | |
| US20230029337A1 (en) | Test method and system for testing connectivity of semiconductor structure | |
| CN114509657A (en) | Test unit for improving WAT test precision and test method thereof | |
| US7898269B2 (en) | Semiconductor device and method for measuring analog channel resistance thereof | |
| CN104977519A (en) | Device hot carrier injection effect test method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Room 401, building 2, Fengze science and Technology Park, 170 West Avenue, high tech Zone, Xi'an, Shaanxi 710000 Applicant after: Saiyinte Semiconductor Technology (Xi'an) Co.,Ltd. Address before: Room 401, building 2, Fengze science and Technology Park, 170 West Avenue, high tech Zone, Xi'an, Shaanxi 710000 Applicant before: Shaanxi Sanhai Test Technology Development Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |