CN112993133B - Display device and manufacturing method thereof - Google Patents
Display device and manufacturing method thereof Download PDFInfo
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- CN112993133B CN112993133B CN202011140297.3A CN202011140297A CN112993133B CN 112993133 B CN112993133 B CN 112993133B CN 202011140297 A CN202011140297 A CN 202011140297A CN 112993133 B CN112993133 B CN 112993133B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000000853 adhesive Substances 0.000 claims description 54
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- 239000000758 substrate Substances 0.000 claims description 40
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- 238000000034 method Methods 0.000 claims description 28
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- 239000000463 material Substances 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 6
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a display device and a manufacturing method thereof. Through set up reflection of light structure between a plurality of chips, the side direction light energy that the chip sent is reflected by reflection of light structure, and partial light is followed the direction outgoing of forward light, and partial light is followed the direction transmission of dorsad light, and the effect of the reflection of the electrode face of reunion circuit backplate for the light of following the direction transmission of dorsad light also is reflected as the direction outgoing of forward light, thereby can abundant utilization side direction light, improves the luminous utilization efficiency of chip.
Description
Technical Field
The invention relates to the technical field of micro light-emitting devices, in particular to a display device and a manufacturing method of the display device.
Background
In recent years, with the development of display technologies, Micro Light Emitting devices having better display effects are gaining favor, and typical display technologies are Micro Light Emitting Diode (Micro Light Emitting Diode) and mini Light Emitting Diode (sub-millimeter Light Emitting Diode). Compared with the traditional LED (Light Emitting Diode) display technology, the Micro-LED and mini-LED display technology can be provided with more Light Emitting chips in the same area, the size of the Light Emitting chips is smaller, and the interval between the adjacent Light Emitting chips is also small.
For the light emitting chips, the light emitted by the light emitting chips is emitted all around, and lateral light is emitted towards the direction of an adjacent chip, so that the light emitting chips are difficult to use, and the utilization efficiency of the light emitted by the light emitting chips is low.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present application aims to provide a display device and a method for manufacturing the display device, which aims to solve the problem of how to use the side light of the light emitting chip to emit light so as to improve the utilization efficiency of light.
A display device, comprising: a circuit backplane; a plurality of light emitting chips bonded on the circuit backplane; and the light reflecting structure is arranged among the plurality of light emitting chips.
Through set up reflection of light structure between a plurality of luminescence chips, the side direction light energy that the luminescence chip sent is reflected by reflection of light structure, and some light is along the direction outgoing of forward light, and some light is along the direction transmission of dorsad light, and the effect of the reflection of the electrode face of reunion circuit backplate for the light of following the direction transmission of dorsad light is also reflected as the direction outgoing of forward light, thereby can abundant utilization side direction light, improve the luminous utilization efficiency of luminescence chip.
Optionally, the light reflecting structure includes an adhesive layer and light reflecting particles, the adhesive layer is disposed on the circuit board and filled between the light emitting chips, and the light reflecting particles are mixed in the adhesive layer. The reflecting structure is formed by mixing the reflecting particles through the adhesive layer, the structure is simple, and the manufacturing is convenient.
Optionally, the adhesive layer is formed by curing a transparent adhesive. The transparent adhesive can be mixed with the reflective particles first and then cured to form the adhesive layer, so that the reflective particles are also cured in the adhesive layer, and the process is simple.
Optionally, the volume percentage of the reflective particles in the reflective structure is 30% to 70%. The reflective particles have the above ratio, have strong reflection capability, and can be stably mixed with the adhesive layer.
Optionally, the reflective particles are any one of silver particles, aluminum particles, pearl powder and glass particles.
Based on the same inventive concept, the present application further provides a manufacturing method of a display device, including:
providing a carrier substrate, wherein the carrier substrate is provided with a plurality of light-emitting chips;
bonding the plurality of light emitting chips to a circuit backplane with the plurality of light emitting chips interposed between the carrier substrate and the circuit backplane;
manufacturing a light reflecting structure among the light emitting chips, wherein the light reflecting structure is connected with two adjacent light emitting chips, and is connected with the circuit backboard and the carrier substrate; and
and removing the carrier substrate.
After the carrier substrate is used for bonding the plurality of light-emitting chips with the circuit backboard, the carrier substrate and the circuit backboard are used for limiting the space, a light reflecting structure located among the plurality of light-emitting chips is formed, lateral light energy emitted by the light-emitting chips is reflected by the light reflecting structure, part of light rays are emitted along the direction of forward light, part of light rays are emitted along the direction of backward light, and the effect of reflection of the electrode surface of the circuit backboard is combined, so that the light rays emitted along the direction of backward light are also reflected to be emitted along the direction of forward light, the lateral light can be fully utilized, and the utilization efficiency of light emission of the light-emitting chips is improved.
Optionally, the light reflecting structure includes an adhesive layer and light reflecting particles, and the light reflecting structure is fabricated between a plurality of the light emitting chips, including:
mixing reflective particles in a transparent binder;
filling the transparent adhesive between the plurality of light emitting chips and connecting the circuit backplane and the carrier substrate;
curing the transparent adhesive to form the adhesive layer.
The reflective particles are mixed in the transparent adhesive, then the transparent adhesive is filled among the plurality of light-emitting chips, the circuit backboard and the carrier substrate are connected, and then the transparent adhesive is cured to form the bonding layer, so that the reflective particles are mixed in the bonding layer, the process is simple, and the implementation is easy.
Optionally, filling the transparent adhesive between the plurality of light emitting chips and connecting the circuit backplane and the carrier substrate, includes:
providing a clamp and placing the clamp in a chamber of a vacuum device;
mounting the circuit backplane bonded with the plurality of light emitting chips using the jig;
injecting the transparent adhesive around the circuit back sheet in a vacuum state;
and slowly changing the pressure in the chamber of the vacuum equipment to gradually change the chamber to normal pressure, wherein the transparent adhesive is gradually filled between the plurality of light emitting chips under the action of the atmospheric pressure.
The circuit back plate is installed through the clamp, the transparent adhesive is injected around the circuit back plate in a vacuum state, then the vacuum is slowly removed, and the transparent adhesive is gradually filled among the plurality of light-emitting chips under the action of air pressure.
Optionally, a liquid storage tank and a filling tank which are communicated with each other are arranged in the clamp, the circuit back plate is arranged in the filling tank, and gaps are formed between the edge of the circuit back plate and the peripheral side walls of the filling tank;
setting the cavity in a vacuum state, and injecting the transparent adhesive into the liquid storage tank, wherein the transparent adhesive overflows from the liquid storage tank into gaps between the circuit back plate and the peripheral side walls of the filling tank;
when the chamber is gradually changed from a vacuum state to a normal pressure state, the transparent adhesive of the liquid storage pool is gradually pushed by air pressure to enter the filling pool and is filled among the plurality of light-emitting chips.
Through the liquid storage tank and the filling tank that set up the anchor clamps intercommunication, can be convenient carry on transparent adhesive store with fill between a plurality of luminescent chip, simple process, easy to operate.
Optionally, the volume percentage of the reflective particles in the reflective structure is set to be 30% to 70%. The reflective particles have the above ratio, have strong reflection capability, and can be stably mixed with the adhesive layer.
Drawings
Fig. 1 is a schematic structural diagram of a display device including a light emitting chip according to an embodiment;
FIG. 2 is a flowchart illustrating a method of fabricating a display device according to an embodiment;
FIG. 3 is a schematic structural diagram illustrating a step of a method for fabricating a display device according to an embodiment;
FIG. 4 is a schematic structural diagram illustrating a step of a method for fabricating a display device according to an embodiment;
FIG. 5 is a flowchart illustrating a method of fabricating a display device according to an embodiment;
FIG. 6 is a schematic diagram illustrating a step of a method for fabricating a display device according to an embodiment;
FIG. 7 is a flowchart illustrating a method of fabricating a display device according to an embodiment;
FIG. 8 is a schematic diagram illustrating a step of a method for fabricating a display device according to an embodiment;
FIG. 9 is a schematic diagram illustrating a step of a method for fabricating a display device according to an embodiment;
fig. 10 is a schematic structural diagram illustrating a step of a manufacturing method of a display device according to an embodiment.
Description of the reference numerals:
10-a circuit backplane, 11-a first pad, 12-a second pad, 13-an electrode surface;
20-light emitting chip, 21-epitaxy, 22-first electrode, 23-second electrode, 24-cover plate;
31-forward light, 32-side light;
40-a carrier substrate;
50-an adhesive layer;
60-adhesive layer, 65-reflective particles, 60' -transparent adhesive;
70-vacuum equipment, 71-chamber;
80-clamp, 81-reservoir, 82-filling reservoir, 83-gap;
100-a wafer;
200-display device.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
For the light-emitting chip, the emitted light is emitted towards the periphery, and the light is emitted towards the side back to the circuit backboard through the reflection of the circuit backboard. However, lateral light of the light emitting chips is emitted toward the adjacent light emitting chips, and thus reflection is difficult to occur, resulting in low utilization efficiency of light emitted from the light emitting chips.
Therefore, it is an urgent need to solve the problem of how to utilize the side light of the light emitting chip for reflection to improve the utilization efficiency of the light.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be set forth in the following embodiments.
Referring to fig. 1, for the LED display device, the light emitting chip 20 is bonded on the circuit backplane 10, and the circuit on the circuit backplane 10 drives the light emitting chip 20 to emit light, so as to implement a display function. For Micro-LED and mini-LED display technologies, the light emitting angle of the light emitting chip 20 is emitted all around, that is, the light emitted by the light emitting chip 20 includes forward light 31, lateral light 32 and backward light (not shown in the figure), the forward light 31 is a light facing away from the circuit backplane 10, the lateral light 32 is a light substantially parallel to the circuit backplane 10, the lateral light 32 is emitted towards the adjacent light emitting chip 20, and the backward light is a light facing away from the forward light 31, that is, the backward light is a light facing towards the circuit backplane 10. The circuit backboard 10 has an electrode surface 13, the light emitting chip 20 is bonded on the electrode surface 13, and the electrode surface 13 has a reflection function, so that the back light is reflected by the electrode surface 13, and the back light is emitted in the same direction as the forward light 31 after being reflected. Since the side light 32 is emitted toward the adjacent light-emitting chip 20 and is substantially parallel to the electrode surface 13, most of the side light 32 is lost, and is difficult to be emitted from the same direction as the forward light 31 and effectively utilized, so that the light-emitting chip 20 is inefficient in light-emitting utilization.
Fig. 1 shows a structure of a display device including one light emitting chip 20 according to an embodiment, including: a circuit backplane 10 and a light emitting chip 20 bonded on the circuit backplane 10. The light emitting chip 20 includes an epitaxial layer 21, a first electrode 22, and a second electrode 23, and the first electrode 22 and the second electrode 23 are connected to the epitaxial layer 21 with a space therebetween. In some embodiments, a cover plate 24 may be further included, the cover plate 24 being connected to a side of the epitaxy 21 facing away from the first electrode 22 and the second electrode 23. In other embodiments, the cover plate 24 may not be provided. The circuit backboard 10 is provided with a first bonding pad 11 and a second bonding pad 12, the first electrode 22 is bonded with the first bonding pad 11, and the second electrode 23 is bonded with the second bonding pad 12. The circuit backboard 10 is provided with an electrode surface 13, the electrode surface 13 comprises a circuit, and the circuit is connected with the first bonding pad 11 and the second bonding pad 12, so that the circuit of the circuit backboard 10 can drive the light-emitting chip 20 to emit light.
The materials of the circuit back plate 10, the epitaxy 21 and the cover plate 24 are different according to different light emitting colors of the light emitting chips 20. When the light emitting chip 20 emits blue light, the main material of the epitaxy 21 may be gallium nitride (GaN), and the circuit backplate 10 and the cover plate 24 may be sapphire; when the light emitting chip 20 emits red light, the main material of the epitaxy 21 is gallium arsenide (GaAs), and the circuit back plate 10 and the cover plate 24 may be red materials; when the light emitting chip 20 emits green light, the main material of the epitaxy 21 may be gallium nitride (GaN), and the circuit board 10 and the cover plate 24 may be green materials. Of course, the above are only examples of some materials, and not limited thereto.
Referring to fig. 2, an embodiment of the present application provides a method for manufacturing a display device, including S10-S40:
referring to fig. 2 to 4, in the present embodiment, in S10: a carrier substrate 40 is provided, and the carrier substrate 40 has a plurality of light emitting chips 20 thereon.
Referring to fig. 2 to 4, in the present embodiment, in S20: the plurality of light emitting chips 20 are bonded to the circuit backplane 10 such that the plurality of light emitting chips 20 are disposed between the carrier substrate 40 and the circuit backplane 10.
Specifically, as shown in fig. 3, the plurality of light emitting chips 20 are first connected to the carrier substrate 40, and as shown in fig. 4, the carrier substrate 40 and the plurality of light emitting chips 20 thereon are then integrally bonded to the circuit backplane 10. The carrier substrate 40 may be sapphire or the like. When the light emitting chips 20 are connected to the carrier substrate 40, an adhesive layer 50 may be disposed on the carrier substrate 40, and the light emitting chips 20 are bonded to the adhesive layer 50.
The light emitting chips 20 of the present embodiment may be any one of a small-pitch LED, a mini-LED, and a Micro-LED, and the size of the light emitting chips 20 and the interval between the light emitting chips 20 are smaller than those of the common conventional LED light emitting chips 20.
Referring to fig. 2 and fig. 6, in the embodiment, in S30: a light reflecting structure is fabricated between the plurality of light emitting chips 20, and the light reflecting structure connects two adjacent light emitting chips 20, and connects the circuit backplane 10 and the carrier substrate 40.
Specifically, as shown in fig. 4 and 6, after the carrier substrate 40 transfers the plurality of light emitting chips 20 to be bonded to the circuit backplane 10, the carrier substrate 40 is not removed, and the light reflecting structure is formed by utilizing the space limitation of the carrier substrate 40 and the circuit backplane 10, that is, the light reflecting structure can be formed between the adjacent light emitting chips 20. Therefore, the step of forming the light reflecting structure is continuous with the step of bonding, and the light reflecting structure is manufactured after the display device is formed without waiting for removing the carrier substrate 40, so that the process steps and time can be saved. In other embodiments, the light reflecting structure may be spaced apart from the carrier substrate 40 without connection.
After the light reflecting structure is formed, referring to fig. 1 and fig. 6, the side light 32 emitted by the light emitting chip 20 can be reflected by the light reflecting structure, a part of the light is emitted in the direction of the forward light 31, and a part of the light is emitted in the direction of the backward light, and then the light emitted in the direction of the backward light is also reflected to be emitted in the direction of the forward light 31 by combining the reflection effect of the electrode surface 13 of the circuit back plate 10, so that the side light 32 can be fully utilized, and the utilization efficiency of the light emitting chip 20 is improved.
Referring to fig. 2 and fig. 6, in the embodiment, in S40: the carrier substrate 40 is removed.
After the light reflecting structure is formed, the carrier substrate 40 is removed, and a desired display device having the light reflecting structure between the plurality of light emitting chips 20 is formed. The method for removing the carrier substrate 40 may adopt a laser lift-off process, a mechanical lift-off process, a chemical etching process, and the like, and is not particularly limited.
Therefore, according to the manufacturing method of the display device provided by the embodiment of the application, after the carrier substrate 40 bonds the plurality of light emitting chips 20 with the circuit backboard 10, the light reflecting structure between the plurality of light emitting chips 20 is formed by utilizing the space limitation of the carrier substrate 40 and the circuit backboard 10, the side light 32 emitted by the light emitting chips 20 can be reflected by the light reflecting structure, part of the light is emitted in the direction of the forward light 31, and part of the light is emitted in the direction of the backward light, and the light emitted in the direction of the backward light is also reflected to be emitted in the direction of the forward light 31 by combining the reflection effect of the electrode surface 13 of the circuit backboard 10, so that the side light 32 can be fully utilized, and the utilization efficiency of the light emission of the light emitting chips 20 is improved.
In one embodiment, referring to fig. 6, the light reflecting structure includes an adhesive layer 60 and light reflecting particles 65. Referring to fig. 2 and 5, the method of S30 of the embodiment of the present application, which includes S31-S33, manufactures a light reflecting structure among the plurality of light emitting chips 20.
Specifically, referring to fig. 5 and 6, in this embodiment, the step S31: the light reflecting particles 65 are mixed in the transparent adhesive 60'. The mixing method may be any known method, and it is only necessary to mix the light reflecting particles 65 substantially uniformly in the transparent adhesive 60 ', and the transparent adhesive 60' is fluid when uncured. Specifically, the transparent adhesive 60' may be benzocyclobutene (BCB), or may be other types of adhesives, and is not particularly limited. The reflective particles 65 may be silver particles, aluminum particles, pearl powder, glass particles, or the like.
Optionally, the volume percentage of the reflective particles 65 in the reflective structure is set to be 30% to 70%. The light reflecting particles 65 have the above ratio, can have a strong reflection ability, and can be stably mixed with the adhesive layer 60. Further optionally, the volume percentage of the reflective particles 65 in the reflective structure is 40% to 60%. Further alternatively, the volume percentage of the reflective particles 65 in the reflective structure is 30%, 40%, 50%, 60%, 70%, etc.
S32 of the present embodiment: a transparent adhesive 60' is filled between the plurality of light emitting chips 20 and connects the circuit backplane 10 and the carrier substrate 40. The method of filling the transparent adhesive 60 'may be any feasible method, and it is understood that the transparent adhesive 60' herein has the reflective particles 65 mixed therein.
S33 of the present embodiment: the transparent adhesive 60' is cured to form the adhesive layer 60. Depending on the type of adhesive, a suitable curing method may be selected. After the transparent adhesive 60 'is cured to form the adhesive layer 60, the reflective particles 65 mixed in the transparent adhesive 60' are also cured in the adhesive layer 60, and the adhesive layer 60 is also transparent after being cured.
In the embodiment, the reflective particles 65 are mixed in the transparent adhesive 60 ', the transparent adhesive 60 ' is filled between the plurality of light emitting chips 20, the circuit backplane 10 and the carrier substrate 40 are connected, and then the transparent adhesive 60 ' is cured to form the adhesive layer 60, so that the reflective particles 65 are mixed in the adhesive layer 60, and the process is simple and easy to implement.
Referring to fig. 5 and 7, in an embodiment of the present application, S22: the transparent adhesive 60' is filled between the plurality of light emitting chips 20 and connects the circuit backplane 10 and the carrier substrate 40, including S321-S324.
Specifically, referring to fig. 7 and 8, in the embodiment, the step S321: a jig 80 is provided and the jig 80 is placed in the chamber 71 of the vacuum apparatus 70.
Referring to fig. 7 and 8, in the present embodiment, in S322: the circuit backplane 10 to which the plurality of light emitting chips 20 are bonded is mounted using a jig 80. In this embodiment, the fixture 80 may be used to mount a circuit backplane 10 of a display device 200; a plurality of circuit backplanes 10 of a display device 200, which plurality of circuit backplanes 10 is also referred to as a wafer 100, may also be mounted using a fixture 80. Each display device 200 includes a circuit backplane 10 and a plurality of light emitting chips 20 thereon. After the related operations are completed, the wafer 100 is subsequently diced to obtain a display device 200.
Referring to fig. 7 and 9, in the embodiment, in S323: a transparent adhesive 60' is injected around the circuit backsheet 10 in a vacuum state. A needle may be used to inject a transparent adhesive 60 ', which transparent adhesive 60' has been mixed with reflective particles 65. The transparent adhesive 60 'is injected in a vacuum state, so that the influence of gas on the transparent adhesive 60' can be reduced, and controllability can be improved.
Referring to fig. 7 and 10, in the present embodiment, S324: the pressure in the chamber 71 of the vacuum apparatus 70 is slowly changed such that the chamber 71 gradually becomes the normal pressure and the transparent adhesive 60' is gradually filled between the plurality of light emitting chips 20 by the atmospheric pressure.
The circuit board 10 is mounted by the jig 80, the transparent adhesive 60 'is injected around the circuit board 10 in a vacuum state, the vacuum is slowly removed, and the transparent adhesive 60' is gradually filled between the plurality of light emitting chips 20 by the air pressure, so that the whole process is simple and has good controllability.
In one embodiment, referring to fig. 8 to 10, a liquid storage tank 81 and a filling tank 82 are disposed in the fixture 80, the circuit board 10 is disposed in the filling tank 82, and a gap 83 is formed between the edge of the circuit board 10 and the peripheral sidewall of the filling tank 82. In this embodiment, the shape of the reservoir 81 is not limited. The shape of the fill pool 82 is generally circular or oval to correspond to the shape of the wafer 100.
Setting the chamber 71 to be in a vacuum state, injecting the transparent adhesive 60 'into the liquid reservoir 81, and enabling the transparent adhesive 60' to overflow from the liquid reservoir 81 to a gap 83 between the circuit backboard 10 and the peripheral side wall of the filling reservoir 82;
when the chamber 71 is gradually changed from the vacuum state to the atmospheric pressure state, the transparent adhesive 60' of the liquid reservoir 81 is gradually pushed by the air pressure into the filling reservoir 82 and filled between the plurality of light emitting chips 20.
Through the liquid storage tank 81 and the filling tank 82 which are communicated by the clamp 80, the transparent adhesive 60' can be conveniently stored and filled among the plurality of light-emitting chips 20, the process is simple, and the operation is easy.
Referring to fig. 6, an embodiment of the present invention further provides a display device, which includes a circuit backplane 10, a plurality of light emitting chips 20, and a light reflecting structure. A plurality of light emitting chips 20 are bonded on the circuit backplane 10, and a light reflecting structure is disposed between the plurality of light emitting chips 20.
This application embodiment is through setting up reflective structure between a plurality of luminescence chips 20, the side direction light 32 that luminescence chips 20 sent can be reflected by reflective structure, some light is along the direction outgoing of forward light 31, some light is along the direction emission of light dorsad, the effect of the reflection of the electrode face 13 of reunion circuit backplate 10, make along the light of light direction emission dorsad also reflected as the direction outgoing of forward light 31, thereby can abundant utilization side direction light 32, improve the luminous utilization efficiency of luminescence chips 20.
In one embodiment, referring to fig. 6, the light reflecting structure includes an adhesive layer 60 and light reflecting particles 65, the adhesive layer 60 is disposed on the circuit board 10 and filled between the light emitting chips 20, and the light reflecting particles 65 are mixed in the adhesive layer 60. The reflecting structure is formed by mixing the adhesive layer 60 with the reflecting particles 65, so that the structure is simple and the manufacturing is convenient. Optionally, the reflective particles 65 are any one of silver particles, aluminum particles, pearl powder, and glass particles.
In one embodiment, referring to fig. 6, the adhesive layer 60 is formed by curing a transparent adhesive 60'. The transparent adhesive 60 'may be mixed with the reflective particles 65 and then the transparent adhesive 60' is cured to form the adhesive layer 60, so that the reflective particles 65 are also cured in the adhesive layer 60, and the process is simple.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A method for manufacturing a display device, comprising:
providing a carrier substrate, wherein the carrier substrate is provided with a plurality of light-emitting chips;
bonding the plurality of light emitting chips to a circuit backplane with the plurality of light emitting chips interposed between the carrier substrate and the circuit backplane;
manufacturing a light reflecting structure among the light emitting chips, wherein the light reflecting structure is connected with two adjacent light emitting chips and is connected with the circuit backboard and the carrier substrate;
making a light reflecting structure between a plurality of the light emitting chips, comprising:
mixing light reflecting particles in a transparent binder;
providing a clamp and placing the clamp in a chamber of a vacuum device;
mounting the circuit backplane bonded with the plurality of light emitting chips using the jig;
injecting the transparent adhesive around the circuit back sheet in a vacuum state;
and slowly changing the pressure in the chamber of the vacuum equipment to gradually change the chamber to normal pressure, wherein the transparent adhesive is gradually filled between the plurality of light emitting chips under the action of the atmospheric pressure.
2. The method of manufacturing a display device according to claim 1,
and curing the transparent adhesive to form the adhesive layer.
3. The manufacturing method of the display device according to claim 1, wherein a liquid storage tank and a filling tank which are communicated with each other are arranged in the fixture, the circuit backboard is arranged in the filling tank, and a gap is formed between the edge of the circuit backboard and the peripheral side wall of the filling tank;
setting the cavity in a vacuum state, and injecting the transparent adhesive into the liquid storage tank, wherein the transparent adhesive overflows from the liquid storage tank into gaps between the circuit back plate and the peripheral side walls of the filling tank;
when the cavity is gradually changed from a vacuum state to a normal pressure state, the transparent adhesive of the liquid storage pool is gradually pushed by air pressure to enter the filling pool and is filled among the plurality of light-emitting chips.
4. The method of manufacturing a display device according to claim 1, wherein the reflective particles are provided in the reflective structure in a volume percentage of 30% to 70%.
5. The method of manufacturing a display device according to claim 1, further comprising:
and removing the carrier substrate.
6. The method of manufacturing a display device according to claim 1, wherein the light reflecting particles are any one of silver particles, aluminum particles, pearl powder, and glass particles.
7. The method for manufacturing a display device according to claim 1, wherein the circuit backplane includes an electrode surface having a reflection function, and the light emitting chip is bonded to the electrode surface.
8. The method of claim 1, wherein a cover plate is attached to a side of each of the light emitting chips facing away from the circuit backplane, and the carrier substrate is attached to the cover plate.
9. The method of manufacturing a display device according to claim 8, wherein the circuit backplane and the cover sheet are made of materials corresponding to emission colors of the light emitting chips.
10. The method of claim 1, wherein an adhesive layer is formed on the carrier substrate, and the light emitting chip is bonded to the adhesive layer.
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| CN112993133A (en) | 2021-06-18 |
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