CN112992880A - Method for forming Mini-LED backlight board through hole and electronic equipment - Google Patents

Method for forming Mini-LED backlight board through hole and electronic equipment Download PDF

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Publication number
CN112992880A
CN112992880A CN202110448071.8A CN202110448071A CN112992880A CN 112992880 A CN112992880 A CN 112992880A CN 202110448071 A CN202110448071 A CN 202110448071A CN 112992880 A CN112992880 A CN 112992880A
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glass substrate
substrate
forming
hole
mini
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CN202110448071.8A
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CN112992880B (en
Inventor
易伟华
张迅
邱晓宇
洪华俊
成育凯
周成
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WG Tech Jiangxi Co Ltd
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WG Tech Jiangxi Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133603Direct backlight with LEDs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)

Abstract

The invention provides a method for forming a Mini-LED backlight board through hole and electronic equipment, wherein the method for forming the Mini-LED backlight board through hole comprises the following steps: obtaining a glass substrate with a preset thickness and a preset size; laser equipment is adopted to laser out a plurality of through hole shapes with preset shapes on the surface of the glass substrate; fixing the glass substrate on a transition substrate; and soaking the substrate in an etching solution, wherein the etching solution permeates through the laser trace to form the through hole with the preset shape. The forming method has the advantages that the speed of forming the through hole on the glass substrate is high, and a through hole structure with a required small size can be formed.

Description

Method for forming Mini-LED backlight board through hole and electronic equipment
Technical Field
The invention relates to the technical field of semiconductor processes, in particular to a method for forming a through hole of a Mini-LED backlight plate and electronic equipment.
Background
With the continuous development of scientific technology, LEDs (Light Emitting diodes) are used as novel Light Emitting devices, and compared with traditional Light Emitting devices, LEDs have the advantages of energy saving, environmental protection, good color rendering and response speed, and the like, and are widely applied to life and work of people, thereby bringing great convenience to daily life of people.
Based on the Mini-LED chip, the LED chip has the chip size of about 100 microns multiplied by 100 microns, has the advantages of high color saturation, local dimming, high brightness and energy-saving lamps, and can be applied to backlight displays, notebooks, tablet computers, televisions and the like.
However, the backlight plate adopted by the current Mini-LED chip backlight structure cannot effectively form the required through hole structure on the backlight plate.
Disclosure of Invention
In view of the above, in order to solve the above problems, the present invention provides a method for forming a Mini-LED backlight through hole and an electronic device, and the technical scheme is as follows:
a method for forming a through hole of a Mini-LED backlight plate comprises the following steps:
obtaining a glass substrate with a preset thickness and a preset size;
laser equipment is adopted to laser out a plurality of through hole shapes with preset shapes on the surface of the glass substrate;
fixing the glass substrate on a transition substrate;
and soaking the substrate in an etching solution, wherein the etching solution permeates through the laser trace to form the through hole with the preset shape.
Preferably, in the above forming method, the obtaining of the glass substrate with a preset thickness and a preset size includes:
selecting the large-size glass substrate with the preset thickness;
and cutting the large-size glass substrate to form the glass substrate with the preset thickness and the preset size.
Preferably, in the above forming method, after the obtaining of the glass substrate with a preset thickness and a preset size, the forming method further includes:
and performing edge grinding and chamfering treatment on the glass substrate.
Preferably, in the above forming method, the predetermined shape is a circular truncated cone having a size gradually increasing in the first direction;
wherein the first direction is perpendicular to the glass substrate and is directed from the transition substrate to the glass substrate.
Preferably, in the above forming method, after the fixing of the glass substrate on a transition substrate, the forming method further includes:
and sealing the outer edge of the glass substrate and the transition substrate.
Preferably, in the above forming method, the sealing process of the outer edge of the glass substrate and the transition substrate includes:
and sealing the outer edge of the glass substrate and the transition substrate by adopting UV glue.
Preferably, in the above forming method, the transition substrate is an acryl substrate.
Preferably, in the above forming method, the size of the transition substrate is the same as the size of the glass substrate.
Preferably, in the above forming method, the etching solution is a hydrofluoric acid solution.
An electronic device comprising at least a Mini-LED backlight structure;
the Mini-LED backlight structure at least comprises a Mini-LED backlight plate;
wherein the through hole on the Mini-LED backlight plate is formed by any one of the forming methods.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a method for forming a Mini-LED backlight board through hole, which comprises the following steps: obtaining a glass substrate with a preset thickness and a preset size; laser equipment is adopted to laser out a plurality of through hole shapes with preset shapes on the surface of the glass substrate; fixing the glass substrate on a transition substrate; and soaking the substrate in an etching solution, wherein the etching solution permeates through the laser trace to form the through hole with the preset shape. The forming method has the advantages that the speed of forming the through hole on the glass substrate is high, and a through hole structure with a required small size can be formed.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic flow chart of a method for forming a through hole of a Mini-LED backlight board according to an embodiment of the present invention;
FIGS. 2-6 are schematic structural diagrams corresponding to the forming method shown in FIG. 1 in an embodiment of the invention;
fig. 7 is a schematic flow chart illustrating another method for forming a through hole of a Mini-LED backlight board according to an embodiment of the present invention;
fig. 8 is a schematic flow chart illustrating a method for forming a through hole of a Mini-LED backlight board according to another embodiment of the present invention;
FIG. 9 is a schematic view of a through hole of a glass substrate according to an embodiment of the present invention;
fig. 10 is a schematic flow chart illustrating a method for forming a through hole of a Mini-LED backlight board according to another embodiment of the present invention;
fig. 11 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the inventive process of the present invention, the inventor finds that, at present, the Mini-LED backlight structure mainly uses a PCB (Printed Circuit Board) substrate, and is limited to a certain extent in product thickness.
According to the inventor, when the thickness of the PCB substrate is less than 0.4mm, when the Mini-LED chip is packaged on the PCB substrate, the problem of glue crack is generated due to different thermal expansion coefficients of the packaging glue and the PCB material.
And, the thermal conductivity of the PCB material is poor, when the number of Mini-LED chips increases. The service life of the Mini-LED chip will be shortened.
These problems have hindered the need for further thinning of the Mini-LED backlight.
Further, the aperture of the PCB substrate is very large based on the current PCB substrate.
Based on the above, the invention provides a method for forming the through hole of the Mini-LED backlight plate, which has the advantages of high through hole forming speed and capability of forming a through hole structure with a required small size.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1, fig. 1 is a schematic flow chart of a method for forming a through hole of a Mini-LED backlight board according to an embodiment of the present invention.
The forming method comprises the following steps:
s101: as shown in fig. 2, a glass substrate 11 of a predetermined thickness and a predetermined size is obtained.
In this step, a glass substrate with a preset thickness and a preset size is obtained according to actual requirements, and the selection of the thickness and the size is not limited in the embodiment of the present invention.
S102: as shown in fig. 3, a plurality of through hole profiles with preset shapes are laser-formed on the surface of the glass substrate 11 by using a laser device.
S103: as shown in fig. 4, the glass substrate 11 is fixed to a transition substrate 12.
S104: as shown in fig. 5, the substrate is immersed in an etching solution, and the etching solution penetrates through the trace of laser to form the through hole with the preset shape.
In this embodiment, the etching solution penetrates through the trace of the laser, and the etching solution erodes the glass substrate 11 after a period of time, as shown in fig. 6, so that all the laser-irradiated patterns are conducted to form the through holes of the predetermined shape.
The forming method has the advantages that the speed of forming the through hole is high, and the through hole structure with the required small size can be formed.
The etching solution includes, but is not limited to, a hydrofluoric acid solution.
Optionally, in another embodiment of the present invention, referring to fig. 7, fig. 7 is a schematic flow chart of another method for forming a through hole of a Mini-LED backlight board according to an embodiment of the present invention.
In step S101, the obtaining of the glass substrate 11 with a preset thickness and a preset size includes:
s1011: selecting the large-size glass substrate with the preset thickness;
s1012: and cutting the large-size glass substrate to form the glass substrate 11 with the preset thickness and the preset size.
In this embodiment, based on the large-size glass substrate with the preset thickness, the optimal region in the large-size glass substrate is selected for cutting, so as to form the glass substrate with high quality, the preset thickness and the preset size, and avoid the occurrence of breakage of the subsequent glass substrate.
Optionally, in another embodiment of the present invention, referring to fig. 8, fig. 8 is a schematic flow chart of a method for forming a through hole of a Mini-LED backlight board according to another embodiment of the present invention.
After the step S101 of obtaining the glass substrate 11 with the preset thickness and the preset size, the forming method further includes:
s105: and performing edge grinding and chamfering treatment on the glass substrate 11.
In this embodiment, the edges of the glass substrate 11 are subjected to edging and chamfering processes to prevent the glass substrate from cracking due to cutting residual sand cracks in the subsequent manufacturing process.
Optionally, in another embodiment of the present invention, referring to fig. 9, fig. 9 is a schematic shape diagram of a through hole of a glass substrate according to an embodiment of the present invention.
The preset shape is a circular truncated cone with the size gradually increasing in the first direction.
Wherein the first direction is perpendicular to the glass substrate 11 and is directed from the transition substrate 12 to the glass substrate 11.
Optionally, in another embodiment of the present invention, referring to fig. 10, fig. 10 is a schematic flow chart of a method for forming a through hole of a Mini-LED backlight board according to another embodiment of the present invention.
After the step S103 of fixing the glass substrate 11 on a transition substrate 12, the forming method further includes:
s106: and sealing the outer edge of the glass substrate 11 and the transition substrate 12.
In this embodiment, the outer edge of the glass substrate 11 and the outer edge of the transition substrate 12 are sealed, so that an etching solution in a subsequent manufacturing process is prevented from entering between the glass substrate 11 and the transition substrate 12, and the manufacturing yield of the through holes of the glass substrate 11 is improved.
Optionally, in another embodiment of the present invention, the sealing process of the outer edge of the glass substrate 11 and the transition substrate 12 includes:
and sealing the outer edge of the glass substrate 11 and the transition substrate 12 by using UV glue.
In this embodiment, the outer edge of the glass substrate 11 and the transition substrate 12 are sealed by UV glue, which has a good sealing effect and is simple to remove the UV glue.
Optionally, in another embodiment of the present invention, the transition substrate 12 is an acrylic substrate.
Optionally, in another embodiment of the present invention, the size of the transition substrate 12 is the same as the size of the glass substrate 11.
Optionally, based on all the above embodiments of the present invention, in another embodiment of the present invention, an electronic device is further provided, referring to fig. 11, and fig. 11 is a schematic structural diagram of an electronic device provided in an embodiment of the present invention.
The electronic device 13 at least comprises a Mini-LED backlight structure;
the Mini-LED backlight structure at least comprises a Mini-LED backlight plate;
the through hole on the Mini-LED backlight plate is formed by the forming method of the embodiment of the invention.
In this embodiment, the electronic device 13 includes, but is not limited to, electronic devices such as a backlight display, a notebook, a tablet computer, and a television.
The method for forming the Mini-LED backlight through hole and the electronic device provided by the invention are described in detail above, a specific example is applied in the text to explain the principle and the implementation of the invention, and the description of the above example is only used to help understanding the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. A method for forming a through hole of a Mini-LED backlight plate is characterized by comprising the following steps:
obtaining a glass substrate with a preset thickness and a preset size;
laser equipment is adopted to laser out a plurality of through hole shapes with preset shapes on the surface of the glass substrate;
fixing the glass substrate on a transition substrate;
and soaking the substrate in an etching solution, wherein the etching solution permeates through the laser trace to form the through hole with the preset shape.
2. The method of forming as claimed in claim 1, wherein said obtaining a glass substrate of a predetermined thickness and a predetermined size comprises:
selecting the large-size glass substrate with the preset thickness;
and cutting the large-size glass substrate to form the glass substrate with the preset thickness and the preset size.
3. The forming method according to claim 1, wherein after the obtaining of the glass substrate of the predetermined thickness and the predetermined size, the forming method further comprises:
and performing edge grinding and chamfering treatment on the glass substrate.
4. The method of forming as claimed in claim 1, wherein said predetermined shape is a truncated cone of increasing size in a first direction;
wherein the first direction is perpendicular to the glass substrate and is directed from the transition substrate to the glass substrate.
5. The method of forming as claimed in claim 1, wherein after said securing said glass substrate to a transition substrate, said method further comprises:
and sealing the outer edge of the glass substrate and the transition substrate.
6. The method of forming as claimed in claim 5, wherein the sealing process of the outer edge of the glass substrate to the transition substrate includes:
and sealing the outer edge of the glass substrate and the transition substrate by adopting UV glue.
7. The method of forming as claimed in claim 1, wherein the transitional substrate is an acrylic substrate.
8. The method of forming as defined in claim 1, wherein the transition substrate is the same size as the glass substrate.
9. The method of forming as claimed in claim 1, wherein the etching solution is a hydrofluoric acid solution.
10. An electronic device, characterized in that the electronic device comprises at least a Mini-LED backlight structure;
the Mini-LED backlight structure at least comprises a Mini-LED backlight plate;
wherein the through hole of the Mini-LED backlight is formed by the forming method of any one of claims 1 to 9.
CN202110448071.8A 2021-04-25 2021-04-25 Mini-LED backlight plate through hole forming method and electronic equipment Active CN112992880B (en)

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Publication number Priority date Publication date Assignee Title
US20030146196A1 (en) * 1995-08-07 2003-08-07 Miki Kurosawa Laser beam machining method for wiring board, laser beam machining apparatus for wiring board, and carbonic acid gas laser oscillator for machining wiring board
US20030150839A1 (en) * 2002-02-05 2003-08-14 Fumitoshi Kobayashi Glass substrate with fine hole and method for producing the same
US20100032087A1 (en) * 2008-06-11 2010-02-11 Nitto Denko Corporation Pressure-sensitive adhesive sheet for laser processing and laser processing method
JP2011228511A (en) * 2010-04-21 2011-11-10 Asahi Glass Co Ltd Glass substrate for semiconductor device through-electrode and manufacturing method thereof
US20160347643A1 (en) * 2015-05-29 2016-12-01 Asahi Glass Company, Limited Glass substrate manufacturing method
US20170295652A1 (en) * 2016-04-06 2017-10-12 Asahi Glass Company, Limited Method of manufacturing glass substrate that has through hole, method of forming through hole in glass substrate and system for manufacturing glass substrate that has through hole
CN107540232A (en) * 2016-06-23 2018-01-05 奥特司科技株式会社 The processing method of glass
CN107835794A (en) * 2015-07-10 2018-03-23 康宁股份有限公司 The method of continuous manufacturing hole and product related to this in flexible substrate plate
JP2018158855A (en) * 2017-03-22 2018-10-11 日本電気硝子株式会社 Manufacturing method of perforated glass substrate
JP2019089082A (en) * 2017-11-13 2019-06-13 ビアメカニクス株式会社 Laser processing method
US20190271873A1 (en) * 2018-03-01 2019-09-05 Panasonic Liquid Crystal Display Co., Ltd. Display device and manufacturing method for display device
CN112119499A (en) * 2018-04-05 2020-12-22 康宁公司 System and method for reducing substrate surface damage during via formation

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030146196A1 (en) * 1995-08-07 2003-08-07 Miki Kurosawa Laser beam machining method for wiring board, laser beam machining apparatus for wiring board, and carbonic acid gas laser oscillator for machining wiring board
US20030150839A1 (en) * 2002-02-05 2003-08-14 Fumitoshi Kobayashi Glass substrate with fine hole and method for producing the same
US20100032087A1 (en) * 2008-06-11 2010-02-11 Nitto Denko Corporation Pressure-sensitive adhesive sheet for laser processing and laser processing method
JP2011228511A (en) * 2010-04-21 2011-11-10 Asahi Glass Co Ltd Glass substrate for semiconductor device through-electrode and manufacturing method thereof
US20160347643A1 (en) * 2015-05-29 2016-12-01 Asahi Glass Company, Limited Glass substrate manufacturing method
CN107835794A (en) * 2015-07-10 2018-03-23 康宁股份有限公司 The method of continuous manufacturing hole and product related to this in flexible substrate plate
US20170295652A1 (en) * 2016-04-06 2017-10-12 Asahi Glass Company, Limited Method of manufacturing glass substrate that has through hole, method of forming through hole in glass substrate and system for manufacturing glass substrate that has through hole
CN107540232A (en) * 2016-06-23 2018-01-05 奥特司科技株式会社 The processing method of glass
JP2018158855A (en) * 2017-03-22 2018-10-11 日本電気硝子株式会社 Manufacturing method of perforated glass substrate
JP2019089082A (en) * 2017-11-13 2019-06-13 ビアメカニクス株式会社 Laser processing method
US20190271873A1 (en) * 2018-03-01 2019-09-05 Panasonic Liquid Crystal Display Co., Ltd. Display device and manufacturing method for display device
CN112119499A (en) * 2018-04-05 2020-12-22 康宁公司 System and method for reducing substrate surface damage during via formation

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