CN112959233B - Fixed abrasive polishing pad and deliquescent KDP crystal dry-type polishing method - Google Patents
Fixed abrasive polishing pad and deliquescent KDP crystal dry-type polishing method Download PDFInfo
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- CN112959233B CN112959233B CN202110246315.4A CN202110246315A CN112959233B CN 112959233 B CN112959233 B CN 112959233B CN 202110246315 A CN202110246315 A CN 202110246315A CN 112959233 B CN112959233 B CN 112959233B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a fixed abrasive polishing pad and a dry polishing method of a KDP crystal easy to deliquesce. The reactant in the polishing pad and KDP crystal are subjected to solid phase chemical reaction, and the generated transition layer is removed under the mechanical action of the abrasive particles to obtain a smooth surface. The invention solves the problem that the KDP crystal is easy to deliquesce, improves the processing efficiency of the KDP crystal, simplifies the polishing process of the KDP crystal, and has the advantages of environmental friendliness, low cost and the like.
Description
Technical Field
The invention relates to the technical field of precision machining, in particular to a polishing method of an optical performance material KDP crystal, and specifically relates to a KDP dry type consolidation abrasive polishing method of a deliquescent functional crystal.
Background
The KDP crystal has the performance advantages of frequency doubling effect, photoelectric effect, piezoelectric effect, large nonlinear optical coefficient, high laser damage threshold, wide light-transmitting wave band, excellent optical uniformity, easy realization of phase pairing and the like, and has important application in the fields of inertial confinement nuclear fusion, communication, controllable thermonuclear reaction, nuclear reaction explosion and the like. However, the KDP crystal has the characteristics of low hardness, high brittleness, temperature sensitivity, deliquescence and anisotropy and the like, and is one of the most difficult laser optical elements recognized by the international optical community.
There are many current patents directed to precision processing of KDP crystals. Patent CN 202010704951.2 discloses a method for preparing chemical polishing solution for KDP crystal and a polishing method, the polishing solution is an organic solvent completely free of solid particles, and the removal of materials is realized by chemical action. Patent CN 201910972150.1 discloses a plasma modified liquid film contact deliquescence polishing device and a polishing method, the device comprises a plasma generating device and a micro-vapor generating device besides a polishing pad. Patent CN 201610271922.5 discloses a surface polishing method of potassium dihydrogen phosphate crystal, which comprises spin coating a planarization layer on the surface, performing heat treatment, vacuum filling reaction gas, and performing discharge etching. CN201410288335.8 discloses a magnetorheological polishing method for deliquescent crystals, which comprises the steps of preparing a polishing solution containing alkoxy alcohol, magnetosensitive particles, a surfactant and deionized water, cleaning aromatic hydrocarbon, carrying out magnetorheological polishing processing, cleaning the aromatic hydrocarbon and the like.
In the above patents, the polishing liquid is involved in the processing. However, the micro-removal method of the polishing solution has the problems of low material removal rate, low utilization rate of the polishing solution, uncontrollable processing process and the like, and in addition, the preparation, atomization and cleaning steps of the polishing solution have the problems of high equipment cost, environmental pollution and the like.
Disclosure of Invention
The invention aims to provide a dry type fixed abrasive polishing method for deliquescent KDP crystals, aiming at the problems of low material removal rate, complex polishing process, environmental pollution and the like in the existing KDP crystal polishing processing, and the precise polishing of the deliquescent KDP crystals is realized.
The technical scheme of the invention is as follows:
a fixed abrasive polishing pad for dry polishing of KDP crystals, which comprises abrasive particles, reactants, a catalyst, a curing agent and a bonding agent, wherein the abrasive particles are one or more of silicon dioxide, cerium oxide, aluminum oxide and silicon carbide;
the reactant and the KDP crystal are subjected to solid phase chemical reaction in the polishing process, the reactant is one or more of potassium hydroxide, potassium carbonate, potassium bicarbonate and potassium oxalate, and the mass fraction is 5% -40%;
the catalyst promotes solid-phase chemical reaction, and is one or more of fatty amide sulfosuccinic acid monoester, N-lauroyl sarcosine sodium and fatty alcohol-polyoxyethylene ether sodium sulfate, and the mass fraction of the catalyst is 0.1-10%.
Furthermore, the grain diameter of the abrasive grains is 0.5-5 μm, and the mass fraction of the abrasive grains is 10% -60%.
A KDP crystal dry-type fixed abrasive polishing method easy to deliquesce adopts the fixed abrasive polishing pad to polish KDP crystals, and dry-type fixed abrasive polishing without using a liquid polishing medium is adopted. The fixed abrasive polishing pad comprises abrasive particles, reactants, a catalyst, a curative and a binder. The transition layer generated by the solid-phase chemical reaction of the reactant and the KDP crystal is removed under the mechanical action of the abrasive particles to obtain a smooth surface.
The abrasive is one or the combination of more than one of silicon dioxide, cerium oxide, aluminum oxide and silicon carbide. The grain diameter of the abrasive grains is 0.1-5 mu m, and the mass fraction is 10% -60%.
The reactant is one or a combination of more than one of potassium hydroxide, potassium carbonate, potassium bicarbonate and potassium oxalate, wherein the mass fraction of the reactant is 5-40%. The reactant can perform solid phase reaction with KDP crystal under certain conditions, and the generated transition layer is mechanically removed by abrasive particles, so that the purpose of chemical mechanical polishing is finally achieved.
The catalyst is one or more of fatty amide sulfosuccinic acid monoester, N-lauroyl sarcosine sodium and fatty alcohol-polyoxyethylene ether sodium sulfate, and the mass fraction is 0.1-10%. The other components are curing agent and bonding agent.
Advantageous effects
Compared with the existing KDP crystal polishing method, the invention has the following advantages:
according to the dry type fixed abrasive polishing technology, the reactant is fixed in the polishing pad, and the transition layer generated by the solid phase reaction of the reactant and the KDP crystal is mechanically removed by the abrasive particles, so that the KDP crystal matrix is obtained with a smooth surface and is not scratched, and the surface and the sub-surface of the crystal are prevented from being damaged.
The polishing pad adopted by the invention is a fixed abrasive polishing pad, and abrasive particles are fixed in the polishing pad. The position of the consolidated abrasive particles in the polishing pad is basically unchanged, and compared with liquid corrosion polishing, the consolidated abrasive polishing process is controllable and the material removal rate is higher; the grinding material can fall off only when being worn dully, and the utilization rate of the grinding material is high.
The invention does not adopt liquid polishing medium, solves the problem that KDP crystal is easy to deliquesce, avoids the steps of polishing solution preparation, atomization, waste liquid recovery treatment and the like, and simplifies the polishing process.
The invention does not relate to polishing solution, avoids the problems of material waste, environmental pollution and the like caused by low utilization rate of the polishing solution, and belongs to the green processing technology.
Detailed Description
The present invention will be further described with reference to examples.
The application provides a fixed abrasive polishing pad which is used for dry polishing of crystals and comprises abrasive particles, reactants, a catalyst, a curing agent and a bonding agent, wherein the abrasive particles are one or more of silicon dioxide, cerium oxide, aluminum oxide and silicon carbide;
the reactant and the KDP crystal are subjected to solid phase chemical reaction in the polishing process, the reactant is one or more of potassium hydroxide, potassium carbonate, potassium bicarbonate and potassium oxalate, and the mass fraction is 5% -40%;
the catalyst promotes solid-phase chemical reaction, and is one or more of fatty amide sulfosuccinic acid monoester, N-lauroyl sarcosine sodium and fatty alcohol-polyoxyethylene ether sodium sulfate, and the mass fraction of the catalyst is 0.1-10%.
Furthermore, the grain diameter of the abrasive grains is 0.5-5 μm, and the mass fraction of the abrasive grains is 10% -60%.
The polishing pad adopted by the invention is a fixed abrasive polishing pad, and abrasive particles are fixed in the polishing pad. The position of the consolidated abrasive particles in the polishing pad is basically unchanged, and compared with liquid corrosion polishing, the consolidated abrasive polishing process is controllable and the material removal rate is higher; the grinding material can fall off only when being worn dully, and the utilization rate of the grinding material is high.
Based on the fixed abrasive polishing pad, the invention also provides a KDP crystal dry-type fixed abrasive polishing method, which comprises the step of polishing the KDP crystal by using the fixed abrasive polishing pad, wherein the fixed abrasive polishing pad comprises abrasive particles, reactants, a catalyst, a curing agent and a bonding agent, the reactants and the KDP crystal undergo a solid-phase chemical reaction to generate a transition layer, and the transition layer is removed under the mechanical action of the abrasive particles to obtain a smooth surface.
The abrasive grain and the abrasive in the fixed abrasive polishing pad are one or the combination of more than one of silicon dioxide, cerium oxide, aluminum oxide and silicon carbide.
The grain diameter of the abrasive grains is 0.5-5 mu m, and the mass fraction is 10% -60%.
A reactant in the fixed abrasive polishing pad and KDP crystals undergo a solid-phase chemical reaction in the polishing process, wherein the reactant is one or more of potassium hydroxide, potassium carbonate, potassium bicarbonate and potassium oxalate, and the mass fraction of the reactant is 5-40%.
The catalyst in the fixed abrasive polishing pad promotes solid-phase chemical reaction, is one or more of fatty amide sulfosuccinic acid monoester, N-lauroyl sarcosine sodium and fatty alcohol-polyoxyethylene ether sodium sulfate, and accounts for 0.1-10% by mass.
The first embodiment.
Carrying out dry polishing on the KDP crystal by using a cerium oxide consolidated abrasive polishing pad, wherein 30g of cerium oxide abrasive grains are contained in the polishing pad, and the grain size is 1.0 mu m; 10g of potassium hydroxide; 2.2g of fatty amide sulfosuccinic acid monoester (N-lauroyl sodium sarcosinate or fatty alcohol-polyoxyethylene ether sodium sulfate), and the balance of curing agent and bonding agent; the polishing pressure is set to be 20 kPa; the rotating speed of the polishing pad is 40r/min, and the rotating speed of the workpiece is 45 r/min; the polishing time was 20 min.
In the polishing process, the polishing pad is in contact with the KDP crystal surface, the temperature of the contact surface is raised under the action of pressure, the potassium hydroxide in the polishing pad and the KDP crystal are subjected to solid-phase chemical reaction under the catalysis of the fatty amide sulfosuccinic acid monoester to generate a transition layer, and the generated transition layer is mechanically removed by the cerium oxide abrasive particles in the polishing pad.
The surface roughness after polishing is 3.79nm, the material removal rate is 265nm/min, the crystal surface is smooth, and no obvious scratch is generated.
Example two
Carrying out dry polishing on the KDP crystal by using an alumina consolidated abrasive polishing pad, wherein 25g of alumina abrasive grains are contained in the polishing pad, and the grain size is 3.0 mu m; 15g of potassium carbonate; 3g of N-lauroyl sodium sarcosinate (fatty amide sulfosuccinic acid monoester or fatty alcohol polyoxyethylene ether sodium sulfate), and the balance of curing agent and bonding agent; the polishing pressure is set to be 20 kPa; the rotating speed of the polishing pad is 50r/min, and the rotating speed of the workpiece is 55 r/min; the polishing time was 25 min.
In the polishing process, the polishing pad is in contact with the KDP crystal surface, the temperature of the contact surface is increased under the action of pressure, the potassium carbonate in the polishing pad and the KDP crystal are subjected to solid phase chemical reaction under the catalysis of N-lauroyl sarcosine sodium to generate a transition layer, and the generated transition layer is mechanically removed by alumina abrasive particles in the polishing pad.
The surface roughness after polishing is 5.63nm, the material removal rate is 482nm/min, the crystal surface is smooth, and individual fine scratches, a few of bulges and pits are observed by an atomic force microscope.
EXAMPLE III
Carrying out dry polishing on the KDP crystal by using a cerium oxide consolidated abrasive polishing pad, wherein 35g of cerium oxide abrasive grains are contained in the polishing pad, and the grain size is 5.0 mu m; 10g of potassium bicarbonate; 4g of fatty amide sulfosuccinic acid monoester (N-lauroyl sodium sarcosinate or fatty alcohol-polyoxyethylene ether sodium sulfate), and the balance of curing agent and bonding agent; the polishing pressure is set to be 25 kPa; the rotating speed of the polishing pad is 40r/min, and the rotating speed of the workpiece is 42 r/min; the polishing time was 30 min.
In the polishing process, the polishing pad is in contact with the KDP crystal surface, the temperature of the contact surface is increased under the action of pressure, the potassium bicarbonate in the polishing pad and the KDP crystal are subjected to solid-phase chemical reaction under the catalysis of fatty amide sulfosuccinic acid monoester to generate a transition layer, and the generated transition layer is mechanically removed by cerium oxide abrasive particles in the polishing pad.
The surface roughness after polishing is 6.12nm, the material removal rate is 426nm/min, the crystal surface is smooth, and a small amount of scratches and bulges are observed under an atomic force microscope.
Example four
Carrying out dry polishing on the KDP crystal by using a diamond consolidation abrasive polishing pad, wherein the polishing pad contains 32g of diamond abrasive particles, and the particle size is 3.0 mu m; 12g of potassium oxalate; 3.5g of fatty alcohol-polyoxyethylene ether sodium sulfate (N-lauroyl sarcosine sodium or fatty amide sulfosuccinic acid monoester), and the balance of curing agent and bonding agent; the polishing pressure is set to be 20 kPa; the rotating speed of the polishing pad is 50r/min, and the rotating speed of the workpiece is 55 r/min; the polishing time was 20 min.
In the polishing process, the polishing pad is in contact with the KDP crystal surface, the temperature of the contact surface is increased under the action of pressure, potassium oxalate in the polishing pad and KDP crystal are subjected to solid phase chemical reaction under the catalysis of fatty alcohol-polyoxyethylene ether sodium sulfate to generate a transition layer, and the generated transition layer is mechanically removed by diamond abrasive particles in the polishing pad.
The surface roughness after polishing is 5.36nm, the material removal rate is 425nm/min, the crystal surface is smooth, and a small amount of fine scratches are observed under an atomic force microscope.
According to the dry type fixed abrasive polishing technology, a reactant is fixed in a polishing pad, the reactant and KDP crystals generate a transition layer through a solid phase reaction, and then the transition layer is mechanically removed by abrasive particles, so that a KDP crystal matrix with a smooth surface and without scratching is obtained, and the surface and sub-surface of the crystals are prevented from being damaged.
The invention does not adopt liquid polishing medium, solves the problem that KDP crystal is easy to deliquesce, avoids the steps of polishing solution preparation, atomization, waste liquid recovery treatment and the like, and simplifies the polishing process. The invention does not relate to polishing solution, avoids the problems of material waste, environmental pollution and the like caused by low utilization rate of the polishing solution, and belongs to the green processing technology.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (6)
1. A fixed abrasive polishing pad, comprising: the fixed abrasive polishing pad comprises abrasive particles, reactants, a catalyst, a curing agent and a bonding agent, and is used for dry polishing of crystals; the abrasive particles are one or a combination of more than one of silicon dioxide, cerium oxide, aluminum oxide and silicon carbide;
the reactant and KDP crystal are subjected to solid phase chemical reaction in the polishing process, and the reactant is one or more of potassium hydroxide, potassium carbonate, potassium bicarbonate and potassium oxalate;
the catalyst promotes solid-phase chemical reaction, and is one or more of fatty amide sulfosuccinic acid monoester, N-lauroyl sarcosine sodium and fatty alcohol-polyoxyethylene ether sodium sulfate;
the mass fraction of the reactant in the polishing pad is 5-40%, the mass fraction of the catalyst is 0.1-10%, the mass fraction of the abrasive particles is 10-60%, and the balance of the components are a curing agent and a bonding agent.
2. The fixed abrasive polishing pad according to claim 1, wherein the abrasive grains have a grain size of 0.5 to 5 μm.
3. A method for polishing a KDP crystal easy to deliquesce in a dry mode is characterized by comprising the following steps: polishing KDP crystals by using a fixed abrasive polishing pad, wherein the fixed abrasive polishing pad comprises abrasive particles, a reactant, a catalyst, a curing agent and a bonding agent, the reactant and the KDP crystals perform solid-phase chemical reaction to generate a transition layer, and the transition layer is removed under the mechanical action of the abrasive particles to obtain a smooth surface;
a reactant in the fixed abrasive polishing pad and KDP crystals undergo a solid phase chemical reaction in the polishing process, wherein the reactant is one or more of potassium hydroxide, potassium carbonate, potassium bicarbonate and potassium oxalate.
4. The dry polishing method for deliquescent KDP crystal according to claim 3, wherein the abrasive grains in the fixed abrasive polishing pad are one or more of silicon dioxide, cerium oxide, aluminum oxide and silicon carbide, and have a grain size of 0.5-5 μm.
5. The dry polishing method for a deliquescent KDP crystal according to claim 3,
the catalyst in the fixed abrasive polishing pad promotes solid-phase chemical reaction, and is one or more of fatty amide sulfosuccinic acid monoester, N-lauroyl sodium sarcosinate and fatty alcohol-polyoxyethylene ether sodium sulfate.
6. The dry polishing method for deliquescent KDP crystals according to claim 3, characterized in that: the mass fraction of the reactant is 5-40%, the mass fraction of the catalyst is 0.1-10%, the mass fraction of the abrasive particles is 10-60%, and the balance of the curing agent and the bonding agent.
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| US5897424A (en) * | 1995-07-10 | 1999-04-27 | The United States Of America As Represented By The Secretary Of Commerce | Renewable polishing lap |
| US6039775A (en) * | 1997-11-03 | 2000-03-21 | 3M Innovative Properties Company | Abrasive article containing a grinding aid and method of making the same |
| US6986705B2 (en) * | 2004-04-05 | 2006-01-17 | Rimpad Tech Ltd. | Polishing pad and method of making same |
| CN101310922A (en) * | 2008-02-29 | 2008-11-26 | 哈尔滨工业大学 | Patassium dihydrogen phosphate crystal slaking and finishing method |
| CN104209879B (en) * | 2014-09-11 | 2017-04-12 | 衢州学院 | Method for manufacturing soluble fixed soft abrasive-polishing film |
| CN106272034A (en) * | 2016-08-10 | 2017-01-04 | 盐城工学院 | A kind of grinding pad for processing soft brittle crystal material and preparation method thereof |
| CN107953148A (en) * | 2017-11-29 | 2018-04-24 | 浙江工业大学 | It is a kind of based on the sapphire wafer polishing method for including neodymium compound mild abrasives fixation grinding tool |
| CN110052917A (en) * | 2019-04-27 | 2019-07-26 | 安徽工程大学 | A kind of sapphire polishing processing method based on concretion abrasive technology |
| CN112139859A (en) * | 2020-09-21 | 2020-12-29 | 大连理工大学 | Method for anhydrous polishing of KDP crystal |
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Address after: 214187, No. 40, Renmin South Road, Luoyang Town, Huishan District, Jiangsu, Wuxi Patentee after: Nanjing University of Aeronautics and Astronautics Patentee after: NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS WUXI Research Institute Address before: 210016 No.40, Renmin South Road, Luoshe Town, Huishan District, Nanjing City, Jiangsu Province Patentee before: Nanjing University of Aeronautics and Astronautics Patentee before: NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS WUXI Research Institute |