CN112921330A - Organic alkali film-removing liquid - Google Patents

Organic alkali film-removing liquid Download PDF

Info

Publication number
CN112921330A
CN112921330A CN202110087688.1A CN202110087688A CN112921330A CN 112921330 A CN112921330 A CN 112921330A CN 202110087688 A CN202110087688 A CN 202110087688A CN 112921330 A CN112921330 A CN 112921330A
Authority
CN
China
Prior art keywords
mol
content
alkali
film
surfactant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110087688.1A
Other languages
Chinese (zh)
Inventor
岳强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhongshan Jinpuli Electronic Technology Co ltd
Original Assignee
Zhongshan Jinpuli Electronic Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhongshan Jinpuli Electronic Technology Co ltd filed Critical Zhongshan Jinpuli Electronic Technology Co ltd
Priority to CN202110087688.1A priority Critical patent/CN112921330A/en
Publication of CN112921330A publication Critical patent/CN112921330A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23GCLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20Other heavy metals
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0085Apparatus for treatments of printed circuits with liquids not provided for in groups H05K3/02 - H05K3/46; conveyors and holding means therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Paints Or Removers (AREA)
  • Detergent Compositions (AREA)

Abstract

The invention provides an organic alkali film removing liquid, and relates to the field of film removing liquids. The organic alkali film stripping liquid comprises the following components: the water-soluble paint comprises mixed alkali, alcamines, an accelerant, a surfactant and a penetrating agent, wherein the components are dissolved in clear water, the mixture ratio of the components is that the content of the mixed alkali is 1-11 mol/L, the content of the alcamines is 0.25-5.0 mol/L, the content of the accelerant is 0.05-1.0 mol/L, the content of the surfactant is 0.001-0.005 mol/L, and the content of the penetrating agent is 0.001-0.005 mol/L. The PCB film removing treatment can be carried out in a soaking and spraying mode, the operation is convenient, and 50-70 mu m extra-thick dry films or wet films with exposure energy reaching 300 millijoules per square centimeter are removed.

Description

Organic alkali film-removing liquid
Technical Field
The invention relates to the technical field of film removing liquid, in particular to an organic base film removing liquid.
Background
The film removing liquid is used for removing an inner dry film, an outer dry film and a nickel-gold-plated selective dry film in PCB manufacturing, is particularly suitable for removing a fine circuit dry film, and can be used for removing films of an IC (integrated circuit) carrier plate and an MSAP (multiple-position detection) process. The film removing method is characterized in that an alkaline film removing liquid is utilized to neutralize resin containing acid groups, so that the resin is dissolved out, a dry film is separated from a copper surface, and the film removing liquid is often used in the manufacturing and production of electronic product circuits.
The film stripping liquid used in the manufacture and production of the existing electronic product circuit has poor film stripping effect. Usually, the soaking time of the PCB is prolonged to achieve the film removing effect, but the long-time soaking not only reduces the production efficiency of electronic products, but also easily damages the PCB.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides an organic base membrane stripping liquid, which solves the problems that the existing membrane stripping liquid is slow in speed and easy to damage a PCB.
(II) technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme: an organic base film-removing liquid comprises the following components: the water-soluble paint comprises mixed alkali, alcamines, an accelerant, a surfactant and a penetrating agent, wherein the components are dissolved in clear water, and the mixture ratio of the components is that the content of the mixed alkali is 1-11 mol/L, the content of the alcamines is 0.25-5.0 mol/L, the content of the accelerant is 0.05-1.0 mol/L, the content of the surfactant is 0.001-0.005 mol/L, and the content of the penetrating agent is 0.001-0.005 mol/L.
Preferably, the mixed alkali consists of potassium hydroxide and sodium hydroxide, and the molar mass ratio of potassium hydroxide to sodium hydroxide is 1: 1 to 10.
Preferably, the alcohol amine is one or more of monoethanolamine, diethanolamine and triethanolamine.
Preferably, the promoter is one or two of triethylamine and potassium tert-butoxide.
Preferably, the surfactant is a quaternary ammonium compound.
Preferably, the penetrating agent is fatty alcohol-polyoxyethylene ether.
Preferably, the production process of the organic base membrane removing liquid comprises the following steps: adding sodium hydroxide and potassium hydroxide into water, stirring and dissolving, continuously stirring, then sequentially mixing the alcohol amine, the accelerant, the surfactant and the penetrating agent, and obtaining the organic base stripping film after all the components are fully mixed.
Preferably, the use method of the organic base membrane-removing liquid comprises the following steps: adding the organic alkali membrane removing liquid into a container, diluting with clear water, controlling the concentration of alkali equivalent to be 0.5-3.5 mol/L, heating the diluent, keeping the temperature of the diluent to be 40-70 ℃, placing the PCB to be treated into the container, or spraying the diluent on the PCB to be treated in a spraying manner, treating for 1-20 min, and then washing with clear water for 2-3 times.
(III) advantageous effects
The invention provides an organic alkali film-removing liquid. The method has the following beneficial effects:
the invention can remove the extra-thick dry film or wet film with the exposure energy of 50-70 mu m and the exposure energy of 300 mj per square centimeter, and meanwhile, after the film removing treatment, the PCB cannot be damaged
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
the embodiment of the invention provides an organic alkali film stripping liquid, which comprises the following components: the components are dissolved in clear water, preferably deionized water, the mixture ratio of the components is that the content of the mixed alkali is 3mol/L, the content of the alcamines is 1mol/L, the content of the accelerant is 0.5mol/L, the content of the surfactant is 0.002mol/L, and the content of the penetrating agent is 0.003mol/L, after the PCB substrate finishes the green oil process, the substrate which needs the processes of selectively plating thick gold, chemical gold deposition, oxidation resistance (OSP) and the like, or a semiconductor packaging substrate is immersed or sprayed in the organic alkali stripping liquid, so that a cross-linked and cured dry film or wet film swells, decomposes and strips, the green oil surface is not damaged, and the green oil does not change color.
The mixed alkali comprises potassium hydroxide and sodium hydroxide, wherein the molar mass ratio of potassium hydroxide to sodium hydroxide is 1: 4, the alcohol amine is one or more of monoethanolamine, diethanolamine and triethanolamine, the accelerator is one or two of triethylamine and potassium tert-butoxide, the surfactant is a quaternary ammonium compound, and the penetrating agent is fatty alcohol polyoxyethylene ether.
The production process of the organic alkali film stripping liquid comprises the following steps: adding sodium hydroxide and potassium hydroxide into water, stirring and dissolving, preferably using deionized water, continuously stirring, then sequentially mixing alcohol amine, accelerant, surfactant and penetrating agent, and obtaining the organic base membrane fading after all the components are fully mixed.
A use method of an organic base membrane stripping liquid comprises the following steps: adding the organic base membrane removal liquid into a container, diluting with clear water, controlling the concentration of the base equivalent to be 1.5mol/L, heating the diluent, keeping the temperature of the diluent to be 50 ℃, placing the PCB to be treated into the container, treating for 8min, and then washing with clear water for 2-3 times, preferably with deionized water.
Example two:
an organic base film-removing liquid comprises the following components: the components are dissolved in clear water, preferably deionized water, the mixture ratio of the components is that the content of the mixed alkali is 6mol/L, the content of the alcamines is 2mol/L, the content of the accelerant is 0.6mol/L, the content of the surfactant is 0.004mol/L, and the content of the penetrating agent is 0.004mol/L, after the PCB substrate finishes the green oil process, the substrate or the semiconductor packaging substrate which needs the processes of selectively plating thick gold, chemical gold deposition, oxidation resistance (OSP) and the like is immersed or sprayed in the organic alkali stripping liquid, so that a cross-linked and cured dry film or wet film swells, decomposes and strips, the green oil surface is not damaged, and the green oil does not discolor.
The mixed alkali comprises potassium hydroxide and sodium hydroxide, wherein the molar mass ratio of potassium hydroxide to sodium hydroxide is 1: 8, the alcohol amine is one or more of monoethanolamine, diethanolamine and triethanolamine, the accelerator is one or two of triethylamine and potassium tert-butoxide, the surfactant is a quaternary ammonium compound, and the penetrating agent is fatty alcohol polyoxyethylene ether.
The production process of the organic alkali film stripping liquid comprises the following steps: adding sodium hydroxide and potassium hydroxide into water, stirring and dissolving, preferably using deionized water, continuously stirring, then sequentially mixing alcohol amine, accelerant, surfactant and penetrating agent, and obtaining the organic base membrane fading after all the components are fully mixed.
A use method of an organic base membrane stripping liquid comprises the following steps: adding the organic alkali membrane removing liquid into a container, diluting with clear water, controlling the concentration of alkali equivalent to be 2mol/L, heating the diluent, keeping the temperature of the diluent to be 60 ℃, spraying the diluent on the PCB to be treated in a spraying mode, treating for 15min, then washing for 2-3 times with clear water, and preferably using deionized water.
Example three:
the film stripping liquid and the film stripping mode prepared by the formulas of the first embodiment and the second embodiment are respectively used for carrying out film stripping treatment experiments on films on PCBs with different exposure energies, and the results are as follows:
280 millijoules per square centimeter 300 millijoules per square centimeter 320 millijoules per square centimeter
Example one No film residue, no damage to PCB No film residue, no damage to PCB Has no damage to PCB due to residual film
Example two No film residue, no damage to PCB No film residue, no damage to PCB Has no damage to PCB due to residual film
The above table shows that the film removing liquid prepared by the invention can remove a 50-70 μm ultra-thick dry film or wet film with exposure energy of 300 mj per square centimeter, and meanwhile, after the film removing treatment, the PCB cannot be damaged.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (8)

1. The organic base film removing liquid is characterized by comprising the following components: the water-soluble paint comprises mixed alkali, alcamines, an accelerant, a surfactant and a penetrating agent, wherein the components are dissolved in clear water, and the mixture ratio of the components is that the content of the mixed alkali is 1-11 mol/L, the content of the alcamines is 0.25-5.0 mol/L, the content of the accelerant is 0.05-1.0 mol/L, the content of the surfactant is 0.001-0.005 mol/L, and the content of the penetrating agent is 0.001-0.005 mol/L.
2. The organic base membrane stripping solution as claimed in claim 1, characterized in that: the mixed alkali comprises potassium hydroxide and sodium hydroxide, wherein the molar mass ratio of potassium hydroxide to sodium hydroxide is 1: 1 to 10.
3. The organic base membrane stripping solution as claimed in claim 1, characterized in that: the alcohol amine is one or more of monoethanolamine, diethanolamine and triethanolamine.
4. The organic base membrane stripping solution as claimed in claim 1, characterized in that: the accelerant is one or two of triethylamine and potassium tert-butoxide.
5. The organic base membrane stripping solution as claimed in claim 1, characterized in that: the surfactant is a quaternary ammonium compound.
6. The organic base membrane stripping solution as claimed in claim 1, characterized in that: the penetrating agent is fatty alcohol-polyoxyethylene ether.
7. The production process of the organic alkali film stripping liquid is characterized by comprising the following steps of: adding sodium hydroxide and potassium hydroxide into water, stirring and dissolving, continuously stirring, then sequentially mixing the alcohol amine, the accelerant, the surfactant and the penetrating agent, and obtaining the organic alkali membrane removing liquid after all the components are fully mixed.
8. The application method of the organic alkali film stripping liquid is characterized by comprising the following steps: adding the organic alkali membrane removing liquid into a container, diluting with clear water, controlling the concentration of alkali equivalent to be 0.5-3.5 mol/L, heating the diluent, keeping the temperature of the diluent to be 40-70 ℃, placing the PCB to be treated into the container, or spraying the diluent on the PCB to be treated in a spraying manner, treating for 1-20 min, and then washing with clear water for 2-3 times.
CN202110087688.1A 2021-01-22 2021-01-22 Organic alkali film-removing liquid Pending CN112921330A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110087688.1A CN112921330A (en) 2021-01-22 2021-01-22 Organic alkali film-removing liquid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110087688.1A CN112921330A (en) 2021-01-22 2021-01-22 Organic alkali film-removing liquid

Publications (1)

Publication Number Publication Date
CN112921330A true CN112921330A (en) 2021-06-08

Family

ID=76164748

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110087688.1A Pending CN112921330A (en) 2021-01-22 2021-01-22 Organic alkali film-removing liquid

Country Status (1)

Country Link
CN (1) CN112921330A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115522200A (en) * 2022-09-27 2022-12-27 成都光明南方光学科技有限责任公司 Rare metal deplating liquid and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140179583A1 (en) * 2012-12-07 2014-06-26 Boe Technology Group Co., Ltd. Peeling liquid for a resist
CN104987765A (en) * 2015-07-30 2015-10-21 三峡大学 Water-based deinking agent and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140179583A1 (en) * 2012-12-07 2014-06-26 Boe Technology Group Co., Ltd. Peeling liquid for a resist
CN104987765A (en) * 2015-07-30 2015-10-21 三峡大学 Water-based deinking agent and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115522200A (en) * 2022-09-27 2022-12-27 成都光明南方光学科技有限责任公司 Rare metal deplating liquid and preparation method thereof

Similar Documents

Publication Publication Date Title
CN109791377B (en) Detergent composition for resin mask stripping
CN110597026B (en) Dry film removing process for flexible circuit board
CN114554707B (en) Film removing process of high-precision fine circuit board
CN112921330A (en) Organic alkali film-removing liquid
CN105002564A (en) Environment-friendly sapphire film deplating solution and using method thereof
JP7057653B2 (en) Detergent composition for removing resin mask
US5312562A (en) Aqueous electronic circuit assembly cleaner and method
CN113736584A (en) Polyimide degumming agent composition for wafers and preparation method thereof
TWI651409B (en) Aqueous solution and process for removing substances from substrates
KR101557778B1 (en) Composition for photoresist stripper
CN117051455A (en) Tinning and photoresist removing process method for IC lead frame
KR102029442B1 (en) Stripping composition for removing dryfilm resist and stripping method using the same
TW201934738A (en) Resin mask stripping and cleaning method having excellence in resin mask detachment property and continuous operation stability
CN115368773A (en) Stripping agent for PCB solder mask ink stripping
CN115261879A (en) Organic film removing liquid suitable for MSAP (multiple-site amplification process)
CN113844125A (en) Production method of high-elasticity copper plate
KR20080111268A (en) Cleaning solution composition and cleaning method using the same
KR101648110B1 (en) Bonding method having low roughness between metal and polymer, and substrate using the same
JP6670100B2 (en) Cleaning composition for removing resin mask
CN109037032A (en) A kind of optoelectronic semiconductor silicon wafer stripping technique
WO2022114110A1 (en) Cleaning agent composition for detaching resin mask
CN104635439A (en) Photoresist stripping liquid and applications thereof
JP2023172703A (en) Cleaning method
TW202337577A (en) Method for detaching resin mask
CN111880384B (en) Environment-friendly degumming agent for removing photoresist on surface of wafer

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination