CN112904762A - Quick voltage pulse module for semiconductor - Google Patents
Quick voltage pulse module for semiconductor Download PDFInfo
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- CN112904762A CN112904762A CN202110054010.3A CN202110054010A CN112904762A CN 112904762 A CN112904762 A CN 112904762A CN 202110054010 A CN202110054010 A CN 202110054010A CN 112904762 A CN112904762 A CN 112904762A
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- module
- semiconductor
- voltage
- conversion module
- voltage pulse
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/04—Programme control other than numerical control, i.e. in sequence controllers or logic controllers
- G05B19/042—Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
- G05B19/0423—Input/output
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/20—Pc systems
- G05B2219/24—Pc safety
- G05B2219/24215—Scada supervisory control and data acquisition
Abstract
The invention discloses a rapid voltage pulse module for a semiconductor, which comprises a main control chip, an A/D conversion module, a D/A conversion module, a high-speed analog switch, a semiconductor to be tested, a transimpedance amplifier and a display module, the main control chip is respectively connected with the output end of the A/D conversion module, the input end of the D/A conversion module and the display module, the input end of the A/D conversion module is connected with the output end of the transimpedance amplifier, the input end of the transimpedance amplifier is connected with the semiconductor to be tested, the output end of the D/A conversion module is connected with the semiconductor to be tested through the high-speed analog switch, the pulse with the amplitude of 0-3.3V and the width of 200ns-1s can be generated, and the current can be detected in real time, and the small, portable and low-cost nonvolatile semiconductor tester can be made.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to a rapid voltage pulse module for a semiconductor.
Background
The memristor is a nonvolatile electronic storage device, is a novel device with high speed, low power consumption, small area, nonvolatility and memory computing capacity, can perform logic operation and analog operation, is particularly important in analog operation, and can accelerate the computation of a neural network. It was first proposed in 1971 to be a fourth basic two-terminal circuit element, followed by a resistor, a capacitor and an inductor. The first memristor is manufactured in the HP of 2008, then all research institutions and scholars around the world are developing new memristors, and the memristors are manufactured, so that the performance test of the memristors is particularly important, for example, the response time of the memristors can bear how many times of SET and RESET operations, the memory retention time and the like, and therefore an instrument capable of testing the memristors is urgently needed.
Disclosure of Invention
It is an object of the present invention to provide a fast voltage pulse module for a semiconductor to solve the above-mentioned problems of the background art.
In order to achieve the purpose, the invention provides the following technical scheme:
the utility model provides a quick voltage pulse module for semiconductor, includes main control chip, AD conversion module, DA conversion module, high-speed analog switch, the semiconductor that awaits measuring, transimpedance amplifier and display module, main control chip connects AD conversion module's output, DA conversion module's input and display module respectively, and transimpedance amplifier's output is connected to AD conversion module's input, and the semiconductor that awaits measuring is connected to transimpedance amplifier's input, and DA conversion module's output passes through high-speed analog switch and connects the semiconductor that awaits measuring.
As a further scheme of the invention: the type of the transimpedance amplifier is OPA 2277.
As a further scheme of the invention: the main control chip adopts an STM32 singlechip.
As a further scheme of the invention: the model of the high-speed analog switch is ADG733 BRUZ.
As a further scheme of the invention: the power supply module is used for supplying power to the modules, and the output voltage of the power supply module comprises 3.3V voltage, 9V voltage and 5V voltage.
As a further scheme of the invention: the power supply module includes a 78M09 voltage regulator, a 78M05 voltage regulator, and an AMS1117-3.3 voltage regulator.
As a further scheme of the invention: the power supply module also includes an adjustable voltage module that includes two DAC8830ID chips and an OPA2277 chip.
Compared with the prior art, the invention has the beneficial effects that: the invention can generate the pulse with the amplitude of 0-3.3V and the width of 200ns-1s, can detect the current in real time, and can be used as a small, portable and low-cost nonvolatile semiconductor tester.
Drawings
Fig. 1 is a circuit diagram of a power supply module.
Fig. 2 is a circuit diagram of an adjustable voltage module.
Fig. 3 is a circuit diagram of a high-speed analog switch.
Fig. 4 is a circuit diagram of a transimpedance amplifier.
Fig. 5 is a circuit diagram of an ADC acquisition module.
FIG. 6 is a graph of the effect of measuring memristor conductance values.
Fig. 7 is a general framework diagram of the system.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-7, example 1: in the embodiment of the invention, the rapid voltage pulse module for the semiconductor comprises a main control chip, an A/D conversion module, a D/A conversion module, a high-speed analog switch, a semiconductor to be tested, a transimpedance amplifier and a display module, wherein the main control chip is respectively connected with the output end of the A/D conversion module, the input end of the D/A conversion module and the display module, the input end of the A/D conversion module is connected with the output end of the transimpedance amplifier, the input end of the transimpedance amplifier is connected with the semiconductor to be tested, and the output end of the D/A conversion module is connected with the semiconductor to be tested through the high-speed analog switch.
The transimpedance amplifier is of the type OPA 2277. The main control chip adopts an STM32 singlechip. The model of the high-speed analog switch is ADG733 BRUZ. The power supply module is used for supplying power to the modules, and the output voltage of the power supply module comprises 3.3V voltage, 9V voltage and 5V voltage. The power supply module includes a 78M09 voltage regulator, a 78M05 voltage regulator, and an AMS1117-3.3 voltage regulator. The power supply module also includes an adjustable voltage module that includes two DAC8830ID chips and an OPA2277 chip.
The power supply is 12V, 9V voltage and 5V voltage are generated through a 78M09 chip and a 78M05 chip respectively and used for supplying power to the chips of the whole equipment, 5V voltage generated by 78M05 is used for generating 3.3V voltage through an AMS1117-3.3 chip and used as a reference voltage source of a DAC, as shown in figure 1, an upper-layer MCU can control the DAC through an SPI protocol and generate 0-3.3V voltage in a control mode, as shown in figure 2, due to the fact that the driving capacity of the DAC is limited, an operational amplifier is adopted and used as a voltage follower, the load capacity is improved, and as the isolation function of an output stage, the input impedance is made to be infinite, and the output impedance is made to be infinitesimal. The DAC is used for generating a specified voltage and outputting the specified voltage in a pulse form, and the opening and closing of the switch are controlled through a control pin of the switch, so that a pulse with an adjustable pulse width is realized. The scheme of fig. 2 achieves adjustable amplitude and the scheme of fig. 3 achieves adjustable pulse width, which in combination achieve pulses of adjustable amplitude and pulse width.
Since a non-volatile semiconductor memristor is typically a resistor, when a voltage pulse passes through the resistor, a current is generated, which is typically inconvenient to measure, and needs to be converted into a voltage by a trans-impedance amplifier (TIA), as shown in fig. 4.
As shown in fig. 5, the ADC analog-to-digital conversion circuit reads a voltage converted by a transconductance amplifier (TIA) through the ADC. And the MCU is communicated in a parallel communication mode to finish data acquisition.
Example 2: on the basis of embodiment 1, the MCU communicates with the computer through the RS232 serial port, and some program API interfaces are written in the MCU, so that the computer can be used to program the tester to control the tester to generate a specified amplitude, pulse width and waveform, and measure the conductance value of the nonvolatile memristor, as shown in fig. 6.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (7)
1. The utility model provides a quick voltage pulse module for semiconductor, includes main control chip, AD conversion module, DA conversion module, high-speed analog switch, the semiconductor that awaits measuring, transimpedance amplifier and display module, its characterized in that, main control chip connects AD conversion module's output, DA conversion module's input and display module respectively, and transimpedance amplifier's output is connected to AD conversion module's input, and the semiconductor that awaits measuring is connected to transimpedance amplifier's input, and DA conversion module's output passes through high-speed analog switch and connects the semiconductor that awaits measuring.
2. A fast voltage pulse module for semiconductors as claimed in claim 1, wherein the transimpedance amplifier is of type OPA 2277.
3. The module of claim 1, wherein the main control chip is an STM32 single chip microcomputer.
4. A fast voltage pulse module for semiconductors according to claim 2, characterized in that the high speed analog switch is model ADG733 BRUZ.
5. The fast voltage pulse module for semiconductors of claim 1, further comprising a power module for powering the respective modules, the power module output voltage comprising a voltage of 3.3V, a voltage of 9V, and a voltage of 5V.
6. The fast voltage pulse module for semiconductors of claim 5, wherein the power supply module comprises a 78M09 regulator, a 78M05 regulator, and an AMS1117-3.3 regulator.
7. The fast voltage pulse module for semiconductors of claim 6, wherein the power module further comprises an adjustable voltage module comprising two DAC8830ID chips and an OPA2277 chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110054010.3A CN112904762A (en) | 2021-01-15 | 2021-01-15 | Quick voltage pulse module for semiconductor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110054010.3A CN112904762A (en) | 2021-01-15 | 2021-01-15 | Quick voltage pulse module for semiconductor |
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| CN112904762A true CN112904762A (en) | 2021-06-04 |
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| CN202110054010.3A Pending CN112904762A (en) | 2021-01-15 | 2021-01-15 | Quick voltage pulse module for semiconductor |
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| US20130027114A1 (en) * | 2011-07-27 | 2013-01-31 | Infineon Technologies Ag | High Side Switch |
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| US20160095189A1 (en) * | 2014-09-29 | 2016-03-31 | Koninklijke Philips N.V | Systems and methods for lighting control |
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2021
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| CN102478862A (en) * | 2010-11-19 | 2012-05-30 | Ls产电株式会社 | Temperature control module and temperature control apparatus having the same |
| CN202150896U (en) * | 2011-06-23 | 2012-02-22 | 格科微电子（上海）有限公司 | Signal reading circuit and module of image sensor |
| US20130027114A1 (en) * | 2011-07-27 | 2013-01-31 | Infineon Technologies Ag | High Side Switch |
| US20160095189A1 (en) * | 2014-09-29 | 2016-03-31 | Koninklijke Philips N.V | Systems and methods for lighting control |
| CN204719490U (en) * | 2015-07-06 | 2015-10-21 | 江苏立德环保科技有限公司 | A kind of frequency-conversion control cabinet |
| CN106711328A (en) * | 2016-12-29 | 2017-05-24 | 南京邮电大学 | Copper phthalocyanine memristor and preparation method thereof |
| CN209283247U (en) * | 2018-11-29 | 2019-08-20 | 深圳市易飞扬通信技术有限公司 | 100Gbps optical module |
| CN110535461A (en) * | 2019-08-01 | 2019-12-03 | 上海大学 | A kind of heterodyne detection device based on optical injection-locked and Optical phase-locked loop |
| CN211717946U (en) * | 2020-03-12 | 2020-10-20 | 重庆盛科纳科技有限公司 | A spacing protection device for distributing type sclerometer |
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Application publication date: 20210604 |