CN112838138B - Flexible touch sensitive element and preparation method thereof - Google Patents
Flexible touch sensitive element and preparation method thereof Download PDFInfo
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- CN112838138B CN112838138B CN202011632158.2A CN202011632158A CN112838138B CN 112838138 B CN112838138 B CN 112838138B CN 202011632158 A CN202011632158 A CN 202011632158A CN 112838138 B CN112838138 B CN 112838138B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 39
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 39
- 239000002131 composite material Substances 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims abstract 9
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims abstract 9
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims abstract 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 30
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 239000011787 zinc oxide Substances 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 239000012263 liquid product Substances 0.000 claims description 10
- 239000002086 nanomaterial Substances 0.000 claims description 10
- 239000000047 product Substances 0.000 claims description 10
- 238000004528 spin coating Methods 0.000 claims description 9
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 239000002105 nanoparticle Substances 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000002121 nanofiber Substances 0.000 claims description 4
- 239000002073 nanorod Substances 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 11
- 239000000843 powder Substances 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 229920001296 polysiloxane Polymers 0.000 abstract description 2
- 239000011148 porous material Substances 0.000 abstract description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- -1 Polydimethylsiloxane Polymers 0.000 description 6
- XSKUQABTDMBZCN-UHFFFAOYSA-N [Sb].[As].[In] Chemical compound [Sb].[As].[In] XSKUQABTDMBZCN-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 229940126534 drug product Drugs 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 239000000825 pharmaceutical preparation Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention discloses a flexible touch-sensitive element and a preparation method thereof.A composite material formed by doping GaInAsSb and PDMS is filled between two metal electrodes; under the touch condition, the resistance of the composite material changes, the touch behavior is sensed, and the composite material can be used in the field of flexible electronic skin. Doped GaInAsSb is a narrow-bandgap semiconductor material, and can realize the detection of infrared light emitted by a human body. PDMS is a flexible silicone material with pores that can be air permeable and moisture permeable. The composite material formed by dispersing the doped GaInAsSb powder in PDMS has the characteristic of flexibility. Under the condition of external pressure of a human body, the change of the resistance value of the composite material is caused by the change of the contact degree of the doped GaInAsSb powder, and meanwhile, infrared light radiated by the human body at the external pressure excites the doped GaInAsSb to generate a photoconductive effect to cause the change of the resistance of the composite material, so that the composite material can sense touch.
Description
Technical Field
The invention belongs to the field of component preparation, and particularly relates to preparation of a component taking a gallium indium arsenic antimony (GaInAsSb) doped and Polydimethylsiloxane (PDMS) composite material as a resistance sensitive layer.
Background
Gallium indium arsenic antimony (GaInAsSb) is a narrow bandgap semiconductor material, is sensitive to infrared light, changes in resistance after being irradiated by the infrared light, can be made into an infrared photoelectric detector, can further increase the detection wavelength after being doped, and realizes the detection of infrared rays radiated by a human body. The GaInAsSb powder material is dispersed in the medium, the contact degree between the powder is changed through the extrusion deformation of the medium, and the material resistance value is changed. After the GaInAsSb is compounded with the elastic material, the resistance value of the material can be changed through infrared light radiation or material extrusion deformation, so that the material and the device which are sensitive to human body contact can be prepared.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a touch-sensitive element taking a gallium indium arsenic antimony (GaInAsSb) doped and Polydimethylsiloxane (PDMS) composite material as a functional layer, and an element with flexible touch resistance change is prepared on the basis of the composite material.
A flexible touch sensitive element comprises a gallium indium antimony arsenide doped and polydimethylsiloxane composite material and two metal electrodes; and a composite material doped with gallium indium arsenic antimony (GaInAsSb) and Polydimethylsiloxane (PDMS) is filled between the two metal electrodes.
The method is to prepare a composite film material formed by doping GaInAsSb and PDMS; micropores formed by zinc oxide acid washing are borrowed on the surface of the composite material, and the micropores are favorable for electrode deposition; and depositing a metal conductive electrode on the surface to realize the preparation of the component.
The preparation method of the flexible touch sensitive element comprises the following specific steps:
and (1) preparing the doped GaInAsSb nano material by a chemical vapor deposition method. The appearance can be nano particles, nano rods and nano fibers. The doping agent is metal bismuth (Bi), and the doping concentration Bi is Sb =0.5% -2% (molar ratio).
And (2) uniformly dispersing the doped GaInAsSb nano material in PDMS. PDMS was prepared from Dow Corning SYLGARD184, which contains basic components and curing agent. The two components are as follows: curing agent =10, mixed in a ratio of 1, doped GaInAsSb, gaInAsSb: PDMS =70% -95% (volume ratio). Stirring and mixing evenly.
And (3) spin-coating the liquid product obtained in the step (2) on the surface of the silicon substrate with the zinc oxide rod growing on the surface. The spin coating speed is 200-500 rpm. Then a silicon substrate on which a zinc oxide rod is grown is covered on the liquid product. Then, the mixture is placed at room temperature for 2-4 days.
And (4) putting the product obtained in the step (3) into acetic acid for 2-5 minutes, removing the silicon wafer, putting the silicon wafer into the acetic acid again for soaking for 1-3 minutes, cleaning with ethanol, and then airing.
And (5) evaporating the product obtained in the step (4) to form a gold (Au) electrode. And forming an Au/doped GaInAsSb and PDMS composite material/Au structure. And finishing the preparation of the component.
Compared with the prior art, the invention has the following effects: according to the invention, a composite material formed by doping GaInAsSb and PDMS is filled between two metal electrodes, and the electronic component is prepared. Under the touch condition of the electrode, the resistance of the composite material changes, the touch behavior is sensed, and the electrode can be used in the field of flexible electronic skin. Doped GaInAsSb is a narrow-bandgap semiconductor material, and can realize the detection of infrared light (with the wavelength of about 10 microns) emitted by a human body. PDMS is a flexible silicone material with pores that can be air permeable and moisture permeable. The composite material formed by dispersing the doped GaInAsSb powder in PDMS has the characteristic of flexibility. Under the condition of external pressure of a human body, the change of the resistance value of the composite material is caused by the change of the contact degree of the doped GaInAsSb powder, and meanwhile, infrared light radiated by the human body at the external pressure excites the doped GaInAsSb to generate a photoconductive effect to cause the change of the resistance of the composite material, so that the composite material can sense touch.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
Detailed Description
As shown in fig. 1, a flexible touch-sensitive element comprises a gallium indium arsenic antimony doped and polydimethylsiloxane composite material 2 and two metal electrodes 1; and a composite material doped with gallium indium antimony arsenide (GaInAsSb) and Polydimethylsiloxane (PDMS) is filled between the two metal electrodes.
The first embodiment is as follows: a preparation method of a flexible touch-sensitive element specifically comprises the following steps:
and (1) preparing the doped GaInAsSb nano material by a chemical vapor deposition method. The morphology is nanoparticles; the doping agent is metal bismuth (Bi), and the doping molar concentration is Bi, sb =0.5%;
and (2) uniformly dispersing the doped GaInAsSb nano material in PDMS. PDMS was prepared from Dow Corning SYLGARD184, which contains basic components and curing agent. The two components are as follows: curing agent =10, mixed in a ratio of 1, and doped GaInAsSb, gaInAsSb: PDMS =70%, volume ratio; stirring and mixing evenly.
And (3) spin-coating the liquid product obtained in the step (2) on the surface of the silicon substrate with the zinc oxide rod growing on the surface. The spin speed was 200 rpm. Then a silicon substrate on which a zinc oxide rod is grown is covered on the liquid product. After that, the mixture was left at room temperature for 2 days.
And (4) putting the product obtained in the step (3) into acetic acid for 2 minutes, removing the silicon wafer, soaking the silicon wafer into the acetic acid for 1 minute, washing the silicon wafer with ethanol, and airing the silicon wafer.
And (5) evaporating the gold electrode from the product obtained in the step (4). And forming an Au/doped GaInAsSb and PDMS composite material/Au structure. And finishing the preparation of the component.
Example two: a preparation method of a flexible touch-sensitive element specifically comprises the following steps:
and (1) preparing the doped GaInAsSb nano material by a chemical vapor deposition method. The appearance is nano particles, nano rods or nano fibers; the doping agent is metal bismuth, and the doping molar concentration is Bi, wherein Sb is =1%;
and (2) uniformly dispersing the doped GaInAsSb nano material in PDMS. The raw materials for preparing PDMS used for Dow Corning SYLGARD184, and the drug product contained basic components and curing agent. The two components are as follows: curing agent =10, mixed in a ratio of 1, doped GaInAsSb, gaInAsSb: PDMS =80%, by volume; stirring and mixing evenly.
And (3) spin-coating the liquid product obtained in the step (2) on the surface of the silicon substrate with the zinc oxide rod growing on the surface. The spin coating speed is 300 revolutions per minute; then a silicon substrate on which a zinc oxide rod grows is covered on the liquid product. After that, the mixture was left at room temperature for 3 days.
And (4) putting the product obtained in the step (3) into acetic acid for 3 minutes, removing the silicon wafer, soaking in the acetic acid for 2 minutes, cleaning with ethanol, and airing.
And (5) evaporating the gold-plated electrode from the product of the step (4). Forming an Au/doped GaInAsSb and PDMS composite material/Au structure; and finishing the preparation of the component.
Example three: a preparation method of a flexible touch-sensitive element specifically comprises the following steps:
and (1) preparing the doped GaInAsSb nano material by a chemical vapor deposition method. The appearance is nano particles, nano rods or nano fibers; the doping agent is metal bismuth, and the doping molar concentration is Bi: sb =2%.
And (2) uniformly dispersing the doped GaInAsSb nano material in PDMS. The raw materials for preparing PDMS used for Dow Corning SYLGARD184, and the drug product contained basic components and curing agent. The two components are as follows: curing agent =10, mixed in a ratio of 1, and doped GaInAsSb, gaInAsSb: PDMS =95%, volume ratio; stirring and mixing evenly.
And (3) spin-coating the liquid product obtained in the step (2) on the surface of the silicon substrate with the zinc oxide rod growing on the surface. The spin coating speed is 500 revolutions per minute; then a silicon substrate on which a zinc oxide rod is grown is covered on the liquid product. After that, the mixture was left at room temperature for 4 days.
And (4) putting the product obtained in the step (3) into acetic acid for 5 minutes, removing the silicon wafer, soaking in the acetic acid for 3 minutes, cleaning with ethanol, and airing.
And (5) evaporating the gold electrode from the product obtained in the step (4). Forming an Au/doped GaInAsSb and PDMS composite material/Au structure; and finishing the preparation of the component.
Claims (1)
1. A method of making a flexible touch-sensitive member, comprising: the flexible touch-sensitive element comprises a doped GaInAsSb and PDMS composite material and two metal electrodes; the GaInAsSb and PDMS doped composite material is filled between the two metal electrodes;
the preparation method specifically comprises the following steps:
preparing a doped GaInAsSb nano material by a chemical vapor deposition method; the appearance is nano particles, nano rods or nano fibers; the doping agent is metal bismuth, and the doping concentration Bi is Sb =0.5% -2%, which is the molar ratio;
step (2), uniformly dispersing the doped GaInAsSb nano material in PDMS; the raw material for preparing PDMS adopts Dow Corning SYLGARD184, and the raw material comprises basic components and a curing agent; the two components are as follows: curing agent =10, mixed in a ratio of 1, doped GaInAsSb, gaInAsSb: PDMS =70% -95%, volume ratio; stirring and mixing uniformly;
step (3), spin-coating the liquid product obtained in the step (2) on the surface of a silicon substrate with a zinc oxide rod growing on the surface; the spin coating rotating speed is 200-500 r/min; then covering a silicon substrate on which a zinc oxide rod grows on the liquid product; then placing for 2-4 days at room temperature;
step (4), putting the product obtained in the step (3) into acetic acid for 2-5 minutes, then removing the silicon substrate, putting the silicon substrate into the acetic acid again for soaking for 1-3 minutes, washing with ethanol, and then drying in the air;
step (5), evaporating the product of the step (4) to plate the gold electrode; forming an Au/doped GaInAsSb and PDMS composite material/Au structure; and finishing the preparation of the component.
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| CN112838138B true CN112838138B (en) | 2023-04-07 |
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| CA2442985C (en) * | 2001-03-30 | 2016-05-31 | The Regents Of The University Of California | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
| EP1537445B1 (en) * | 2002-09-05 | 2012-08-01 | Nanosys, Inc. | Nanocomposites |
| US8119233B2 (en) * | 2007-02-17 | 2012-02-21 | Nanogram Corporation | Functional composites, functional inks and applications thereof |
| US20110281070A1 (en) * | 2008-08-21 | 2011-11-17 | Innova Dynamics, Inc. | Structures with surface-embedded additives and related manufacturing methods |
| WO2018128513A1 (en) * | 2017-01-09 | 2018-07-12 | 세종대학교 산학협력단 | Sensing system and sensing method using machine learning |
| CN106876577B (en) * | 2017-03-09 | 2019-05-28 | 电子科技大学 | DAST flexible compound piezoelectric material and preparation method thereof |
| CN111312849B (en) * | 2019-05-17 | 2021-09-14 | 北京纳米能源与系统研究所 | Piezoelectric photoelectronic photoelectric detector and construction method thereof |
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