CN112820791A - Component for resisting PID effect and preparation method and application thereof - Google Patents
Component for resisting PID effect and preparation method and application thereof Download PDFInfo
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- CN112820791A CN112820791A CN202110153773.3A CN202110153773A CN112820791A CN 112820791 A CN112820791 A CN 112820791A CN 202110153773 A CN202110153773 A CN 202110153773A CN 112820791 A CN112820791 A CN 112820791A
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- 230000000694 effects Effects 0.000 title claims abstract description 150
- 238000002360 preparation method Methods 0.000 title description 20
- 239000011521 glass Substances 0.000 claims abstract description 246
- 239000000758 substrate Substances 0.000 claims abstract description 155
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 148
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 148
- 239000010410 layer Substances 0.000 claims description 256
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 57
- 238000006243 chemical reaction Methods 0.000 claims description 34
- 238000005342 ion exchange Methods 0.000 claims description 29
- 239000002313 adhesive film Substances 0.000 claims description 27
- 238000004806 packaging method and process Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 24
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 21
- 230000007704 transition Effects 0.000 claims description 21
- 239000002344 surface layer Substances 0.000 claims description 14
- 230000035515 penetration Effects 0.000 claims 2
- 229910001415 sodium ion Inorganic materials 0.000 abstract description 29
- 229910001424 calcium ion Inorganic materials 0.000 abstract description 28
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 abstract description 27
- 238000002834 transmittance Methods 0.000 abstract description 27
- 230000005012 migration Effects 0.000 abstract description 14
- 238000013508 migration Methods 0.000 abstract description 14
- 238000000576 coating method Methods 0.000 abstract description 13
- 239000011248 coating agent Substances 0.000 abstract description 12
- 229910001432 tin ion Inorganic materials 0.000 abstract description 9
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 6
- 238000005381 potential energy Methods 0.000 abstract description 5
- 150000004649 carbonic acid derivatives Chemical class 0.000 abstract description 4
- 230000003628 erosive effect Effects 0.000 abstract description 4
- 150000002500 ions Chemical class 0.000 abstract description 4
- 230000002776 aggregation Effects 0.000 abstract description 3
- 238000004220 aggregation Methods 0.000 abstract description 3
- 239000005368 silicate glass Substances 0.000 description 29
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 18
- 238000001755 magnetron sputter deposition Methods 0.000 description 12
- 230000000149 penetrating effect Effects 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 229910052742 iron Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- -1 battery piece Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000741 silica gel Substances 0.000 description 3
- 229910002027 silica gel Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 108010025899 gelatin film Proteins 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 235000019738 Limestone Nutrition 0.000 description 1
- 239000006004 Quartz sand Substances 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- VEUACKUBDLVUAC-UHFFFAOYSA-N [Na].[Ca] Chemical group [Na].[Ca] VEUACKUBDLVUAC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 239000010428 baryte Substances 0.000 description 1
- 229910052601 baryte Inorganic materials 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000010433 feldspar Substances 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000005816 glass manufacturing process Methods 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000006028 limestone Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000008261 resistance mechanism Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
The application relates to the technical field of photovoltaics, and provides a component for resisting PID effect, which comprises a glass substrate and a tin oxide layer arranged on any surface of the glass substrate. Based on that the ion radius of tin ions is smaller than that of sodium ions and calcium ions, the ionic potential energy is stronger, the binding capacity with oxygen atoms is stronger, the obvious aggregation effect is achieved, the glass network structure can be enhanced, the glass network structure is more compact, the migration of sodium ions and calcium ions is further limited, carbonates containing sodium ions and calcium ions are not formed on the surface of glass, the glass is protected from serious erosion, the weather resistance of the surface of the glass and a glass coating film can be obviously improved, and the generation of a PID attenuation effect on the upper surface of the glass is effectively reduced; meanwhile, the tin oxide layer has small influence on the light transmittance of the whole glass, so that the obtained assembly has strong PID effect resistance, excellent integral performance and wide application.
Description
Technical Field
The application belongs to the technical field of photovoltaics, and particularly relates to a component resistant to a PID effect, and a preparation method and application thereof.
Background
Currently, a battery module is divided into 5 layers in the lamination process of the package. From outside to inside: glass, EVA, battery piece, EVA, backplate. The glass is an amorphous inorganic non-metallic material, and is generally prepared by using various inorganic minerals (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash and the like) as main raw materials and adding a small amount of auxiliary raw materials. Its main components are silicon dioxide and other oxides. Among them, in order to increase the transmittance of glass, an antireflection film is generally coated on the upper surface of glass. When the photovoltaic module is in a humid environment for a long time or is not tightly sealed, water in the air can be adsorbed on the surface of the glass, and a large amount of sodium ions and calcium ions exist in the glass and account for 12-15% of the weight of the glass. Sodium ion and calcium ion in glass and hydrogen ion H in water+Exchange is carried out, NaOH is formed on the surface of the glass through hydrolysis, and SiO is separated out2Separated SiO2Generating silica gel to form a protective film on the surface of the glass; however, NaOH generated by hydrolysis reacts with CO in the air2Reaction to form Na2CO3The silica gel film is accumulated on the surface of the glass, and alkali liquor droplets are finally formed due to the strong moisture absorption of the carbonate and are in long-term contact with the glass, so that the silica gel film of the protective layer can be partially dissolved in the glass, the surface of the glass is seriously and locally corroded, spots are formed, the reduction of the glass transmittance is caused, the reduction of the power generation efficiency of a battery assembly is further caused, and the PID attenuation effect is called in the assembly industry.
At present, the upper surface of glass is coated with an antireflection film, the antireflection effect of the glass can only be improved, and the PID attenuation effect of a crystalline silicon assembly cannot be prevented or reduced, so that the crystalline silicon assembly cannot be normally used for a long time.
Disclosure of Invention
The application aims to provide a component resisting PID effect, a preparation method and application thereof, and aims to solve the problem that the component provided in the prior art has PID attenuation effect to influence use.
In order to achieve the purpose of the application, the technical scheme adopted by the application is as follows:
in a first aspect, the present application provides a component resistant to the PID effect, comprising a glass substrate, tin oxide layers disposed on either side of the glass substrate.
In a second aspect, the present application provides a method for preparing a component resistant to the PID effect, comprising the steps of:
providing a glass substrate, and forming a glass substrate,
and arranging a tin oxide layer on any surface of the glass substrate to obtain the component with the PID effect resistance.
In a third aspect, the application provides a crystalline silicon photovoltaic module with anti-PID effect, the crystalline silicon photovoltaic module is sequentially provided with a transparent packaging layer, a first adhesive film layer, crystalline silicon cell pieces arranged in an interval array, a second adhesive film layer and a photovoltaic back plate in a stacking manner, wherein the transparent packaging layer is selected from a module with anti-PID effect.
The component for resisting PID effect provided by the first aspect of the application comprises a glass substrate and tin oxide layers arranged on either side of the glass substrate. The formation of the PID effect is mainly characterized in that a glass substrate contains a large amount of sodium ions and calcium ions, and the sodium ions, the calcium ions and hydrogen ions in water are exchanged to form a series of reactions to cause the generation of the PID effect, and a tin oxide layer is arranged on any surface of the glass substrate, so that the ionic radius of the tin ions is smaller than that of the sodium ions and the calcium ions, the ionic potential energy is stronger, the binding capacity with oxygen atoms is stronger, the glass network structure can be enhanced, the glass network structure is more compact, the migration of the sodium ions and the calcium ions is limited, carbonates containing the sodium ions and the calcium ions are not formed on the surface of the glass, the glass is protected from serious erosion, the weather resistance of the surface of the glass and a glass coating film can be obviously improved, and the generation of the PID attenuation effect on the upper surface of the glass is effectively reduced; meanwhile, the tin oxide layer has small influence on the light transmittance of the whole glass, so that the obtained assembly has strong PID effect resistance, excellent integral performance and wide application.
According to the preparation method of the PID effect resistant assembly, the PID effect resistant assembly can be obtained by directly arranging the tin oxide layer on any surface of the glass substrate, the preparation process is simple and convenient, the operation is quick, and the large-scale use is facilitated.
The crystalline silicon photovoltaic module of anti PID effect that this application third aspect provided, crystalline silicon photovoltaic module stacks gradually and sets up transparent encapsulation layer, first glued membrane layer, interval array arrangement's crystalline silicon battery piece, second glued membrane layer and photovoltaic backplate, wherein, transparent encapsulation layer is selected from the subassembly of anti PID effect. The transparent packaging layer is selected from a component with anti-PID effect, and the component with anti-PID effect can obviously improve the weather resistance of the glass surface and the glass coating, effectively reduce the generation of PID attenuation effect on the upper surface of the glass and ensure higher light transmittance; therefore, the obtained crystalline silicon photovoltaic module with the PID effect resistance can effectively reduce the PID effect and prolong the service life of the module.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an assembly for resisting PID effect provided by an embodiment of the present application.
Fig. 2 is a schematic structural diagram of an assembly for resisting PID effect provided by the embodiment of the present application.
Fig. 3 is a schematic structural diagram of an assembly for resisting PID effect provided by an embodiment of the present application.
Fig. 4 is a schematic structural diagram of an assembly for resisting PID effect provided by the embodiment of the present application.
Fig. 5 is a schematic structural diagram of an assembly for resisting PID effect provided by the embodiment of the present application.
Fig. 6 is a schematic diagram of an alkali precipitation resistance mechanism of the component provided in the embodiment of the present application.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application more clearly apparent, the present application is further described in detail below with reference to the embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In this application, the term "and/or" describes an association relationship of associated objects, meaning that there may be three relationships, e.g., a and/or B, which may mean: a is present alone, A and B are present simultaneously, and B is present alone. Wherein A and B can be singular or plural. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship.
In the present application, "any one" means one or more, "a plurality" means two or more. "any one of the following" or similar expressions refer to any combination of these items, including any combination of the singular or plural items. For example, "any one(s) of a, b, or c," or "any one(s) of a, b, and c," may mean: a, b, c, a-b (i.e., a and b), a-c, b-c, or a-b-c, wherein a, b, and c may be single or plural, respectively.
It should be understood that, in various embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the execution sequence, some or all of the steps may be executed in parallel or executed sequentially, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.
The terminology used in the embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the examples of this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
The weight of the related components mentioned in the description of the embodiments of the present application may not only refer to the specific content of each component, but also represent the proportional relationship of the weight among the components, and therefore, the content of the related components is scaled up or down within the scope disclosed in the description of the embodiments of the present application as long as it is scaled up or down according to the description of the embodiments of the present application. Specifically, the mass in the description of the embodiments of the present application may be in units of mass known in the chemical industry, such as μ g, mg, g, and kg.
The terms "first" and "second" are used for descriptive purposes only and are used for distinguishing purposes such as substances from one another, and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. For example, a first XX may also be referred to as a second XX, and similarly, a second XX may also be referred to as a first XX, without departing from the scope of embodiments of the present application. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature.
In a first aspect, the present embodiment provides a component for resisting PID effect, as shown in fig. 1, the component for resisting PID effect comprises a glass substrate 1 and tin oxide layers 2 disposed on either side of the glass substrate.
The first aspect of the present application provides a component against PID effect, wherein the component against PID effect comprises a glass substrate 1, and tin oxide layers 2 disposed on either side of the glass substrate. The formation of the PID effect is mainly caused by that the glass contains a large amount of sodium ions and calcium ions, and the sodium ions, the calcium ions and hydrogen ions in water are exchanged to form a series of reactions to cause the generation of the PID effect, and the tin oxide layer 2 is arranged on any surface of the glass substrate 1, so that the ionic radius of the tin ions is smaller than that of the sodium ions and the calcium ions, the ionic potential energy is stronger, the binding capacity with oxygen atoms is stronger, the glass network structure can be enhanced, the glass network structure is more compact, the migration of the sodium ions and the calcium ions is limited, carbonates containing the sodium ions and the calcium ions are not formed on the surface of the glass, the glass is protected from serious erosion, the weather resistance of the surface of the glass and a glass coating film can be obviously improved, and the generation of the PID attenuation effect on the upper surface of the glass is effectively reduced; meanwhile, the tin oxide layer has small influence on the light transmittance of the whole glass, so that the obtained assembly has strong PID effect resistance, excellent integral performance and wide application.
Specifically, the component resistant to the PID effect includes the glass substrate 1, wherein the material of the glass substrate 1 has no particular requirement, and any conventional glass material can be used.
In the embodiment, the thickness of the glass substrate 1 is selected from 2-5 mm, the thickness difference of the glass substrate 1 is +/-0.1 mm, and the thickness of the glass substrate 1 is controlled, so that the obtained component with the PID effect resistance can be well applied to a photovoltaic component, and the wide application is facilitated.
In a particular embodiment, the glass substrate 1 is selected from silicate glasses and the iron content of the provided silicate glass is controlled to be < 140ppm, ensuring a transmittance of the provided silicate glass of > 91%. Because the silicate glass has stable property and ensures higher transmittance of the silicate glass, the transmittance of the component resisting the PID effect is not influenced, and the component can be better applied to photovoltaic components.
Specifically, a tin oxide layer 2 is provided on either surface of the glass substrate 1. The ion radius of tin ions is smaller than that of sodium ions and calcium ions, the ion potential energy is stronger, the binding capacity with oxygen atoms is stronger, the obvious aggregation effect is achieved, the tin ions can be preferentially combined with the oxygen atoms to form an oxide structure, the glass network structure is enhanced, the glass network structure is more compact, the migration of the sodium ions and the calcium ions is further limited, carbonate containing the sodium ions and the calcium ions is not formed on the surface of the glass, the glass is protected from being seriously corroded, the weather resistance of the surface of the glass and a glass coating film can be obviously improved, and the generation of the PID attenuation effect on the upper surface of the glass is effectively reduced; meanwhile, the influence of the tin oxide layer 2 on the light transmittance of the whole device is small, so that the obtained component is high in PID (proportion integration differentiation) resistance effect, excellent in overall performance and wide in application.
In an embodiment, as shown in fig. 2, the tin oxide layer 2 includes a first tin oxide layer 21, and the first tin oxide layer 21 is a transition region 211 formed by penetrating into a surface layer of the glass substrate 1. The transition region 211 is a region in which the tin content in the first tin oxide layer 21 decreases in the direction from the first tin oxide layer 21 to the glass substrate 1. The obtained assembly resisting the PID effect comprises a glass substrate 1 and first tin oxide layers 21 arranged on either side of the glass substrate 1, wherein the first tin oxide layers 21 are transition regions formed by penetrating into the surface layers of the glass substrate. In the assembly for resisting the PID effect, the glass substrate 1 and the first tin oxide layer 21 form an integrated structure, interface reflection does not exist, and the influence on light transmittance is low.
In another embodiment, as shown in fig. 3, the tin oxide layer 2 includes a second tin oxide layer 22, the second tin oxide layer 22 is laminated and bonded on the surface of the glass substrate, and the resulting assembly resisting the PID effect includes the glass substrate 1 and the second tin oxide layers 22 disposed on either side of the glass substrate 1, wherein the second tin oxide layer 22 is bonded on the surface of the glass substrate 1. The second tin oxide layer 22 formed will have some interfacial reflection with the glass substrate 1, which will result in a reduced light transmission of the assembly.
In another embodiment, as shown in fig. 4, the tin oxide layer includes a first tin oxide layer 21 and a second tin oxide layer 22, and the first tin oxide layer 21 is a transition region formed by penetrating into the surface layer of the glass substrate 1; the second tin oxide layer 22 is combined on the surface of the first tin oxide layer 21, which is far away from the glass substrate 1, so as to obtain the component glass substrate 1 with the PID effect resistance, and the tin oxide layers 2 arranged on any surfaces of the glass substrate, wherein the tin oxide layers 2 comprise the first tin oxide layer 21 and the second tin oxide layer 22, and the first tin oxide layer 21 is a transition region formed by penetrating into the surface layer of the glass substrate 1; the second tin oxide layer 22 is bonded to the surface of the first tin oxide layer 21 facing away from the glass substrate 1. The formed component for resisting the PID effect is provided with the first tin oxide layer 21 and the second tin oxide layer 22, so that the obtained component for resisting the PID effect can effectively limit the migration of sodium ions and calcium ions under the dual action of the first tin oxide layer 21 and the second tin oxide layer 22, meanwhile, the weather resistance of the glass surface and a glass coating can be obviously improved, and the generation of the PID attenuation effect on the upper surface of the glass can be effectively reduced; and the light transmittance of the obtained component with the PID effect resistance is further ensured to be less influenced, and the overall performance is ensured to be excellent.
In the embodiment, the first tin oxide layer 21 is a transition region formed by penetrating into the surface layer of the glass substrate 1, wherein the thickness of the transition region is 2-25 micrometers, the thickness of the transition region is controlled to be moderate, so that in the obtained assembly, the tin ions in the first tin oxide layer 21 can be high in binding capacity with oxygen, the aggregation effect is obvious, the glass network structure is enhanced, and the glass network structure is more compact; when the glass is corroded by the outside, the migration of sodium ions and calcium ions is limited, the weather resistance of the glass surface and the glass coating can be obviously improved, and the generation of PID attenuation effect on the upper surface of the glass is effectively reduced. Meanwhile, the influence of the transition region on the light transmittance of the whole glass is small, and the influence on the power generation effect of the assembly is small. If the thickness of the transition region is too small, the effect of suppressing ion migration is not obtained, and if the thickness of the transition region is too large, the light transmittance of the material surface is affected.
Furthermore, the thickness of the second tin oxide layer 22 is 0.01-0.05 microns, the thickness of the second tin oxide layer 22 is controlled to be moderate, and the obtained assembly is ensured, so that on one hand, a layer of protection effect can be formed on the surface of glass, the migration of sodium ions and calcium ions is effectively limited, meanwhile, the weather resistance of the surface of the glass and the coating of the glass can be obviously improved, and the generation of a PID attenuation effect on the upper surface of the glass is effectively reduced; on the other hand, the thickness of the second tin oxide layer 22 is controlled, so that the light transmittance of the obtained component with the PID effect resistance is ensured to be less influenced, and the overall performance is ensured to be excellent.
Further, the component for resisting PID effect also comprises: and an antireflection film layer 3 is arranged on the surface of the tin oxide layer 2, which is far away from the glass substrate 1.
As shown in fig. 5, the component resisting PID effect comprises a glass substrate 1, a tin oxide layer 2 disposed on either side of the glass substrate 1, and an antireflection film layer 3 disposed on the surface of the tin oxide layer 2 facing away from the glass substrate 1. The purpose of the antireflection film layer is to reduce or eliminate reflected light, so that the light transmission amount of the photovoltaic element is increased, stray light of a system is reduced or eliminated, and the light transmittance is improved.
Further, the anti-reflection film layer 3 is selected from a silicon nitride layer, and the thickness of the anti-reflection film layer 3 is 150-180 nanometers.
In a second aspect, an embodiment of the present application provides a method for preparing an anti-PID component, including the following steps:
s01, providing a glass substrate,
and S02, arranging a tin oxide layer on any surface of the glass substrate to obtain the component with the PID effect resistance.
According to the preparation method of the PID effect resistant assembly, the PID effect resistant assembly can be obtained by directly arranging the tin oxide layer 2 on any surface of the glass substrate 1, the preparation process is simple and convenient, the operation is quick, and the large-scale use is facilitated.
In step S01, the glass substrate 1 is provided, and the provided glass substrate 1 is cleaned to remove impurities, so as to ensure that the clean and impurity-free glass substrate 1 is used.
In step S02, a tin oxide layer 2 is provided on either surface of the glass substrate 1 to obtain a component resistant to the PID effect.
In some embodiments, the tin oxide layer 2 includes a first tin oxide layer 21, the first tin oxide layer 21 is a transition region formed by penetrating into a surface layer of the glass substrate 1, and the preparation method includes the following steps:
G01. a glass substrate 1 is provided which is,
G02. and providing a tin solution, and placing one surface of the glass substrate 1 in the tin solution for ion exchange reaction to form a first tin oxide layer so as to obtain the component with the anti-PID effect.
In the step G02, in the process of placing one surface of the glass substrate in a tin solution for ion exchange reaction, the temperature of the ion exchange reaction is 600-1100 ℃ in a reducing atmosphere, and the time of the ion exchange reaction is 5-30 minutes. The temperature of the ion exchange reaction is controlled to be 600-1100 ℃, the activity degree of tin ions can be improved, and the preparation of the first tin oxide layer is facilitated in order to prevent the volatilization of the tin solution. The time of the ion exchange reaction is controlled to be 5-30 minutes, the thickness of the formed first tin oxide layer is ensured to be 2-25 micrometers, the weather resistance of the glass surface and a glass coating film can be obviously improved, and the generation of a PID attenuation effect on the upper surface of the glass is effectively reduced. Further, the reducing atmosphere is H2And N2And in the mixed gas, H22-8% by volume of N2The volume percentage of the glass is 92-98%, under the above conditions, the glass floats on the surface of the tin solution, and the glass structure can perform ion exchange with tin ions in the tin solution. In some implementationsIn the example, the tin oxide layer 2 includes a second tin oxide layer 2, and the second tin oxide layer 2 is prepared by a conventional method such as a sol-gel method, a magnetron sputtering method, a vapor deposition method, and the like.
Further, the component for resisting PID effect also comprises: and arranging an antireflection film layer 3 on the surface of the tin oxide layer, which is far away from the glass substrate. The anti-reflection film layer 3 is prepared by adopting a sol-gel method, a magnetron sputtering method, a vapor deposition method and other conventional methods.
In some embodiments, the component resistant to the PID effect may be selected from, but is not limited to, a process using float glass, and other glass making processes may be used.
The third aspect of the embodiments of the present application provides a crystalline silicon photovoltaic module with an anti-PID effect, where the crystalline silicon photovoltaic module is sequentially stacked with a transparent encapsulation layer, a first adhesive film layer, crystalline silicon battery pieces arranged in an interval array, a second adhesive film layer, and a photovoltaic back plate, where the transparent encapsulation layer is selected from an assembly with an anti-PID effect.
According to the crystalline silicon photovoltaic component with the PID effect resistance, the crystalline silicon photovoltaic component is sequentially provided with the transparent packaging layer, the first adhesive film layer, the crystalline silicon battery pieces arranged in the interval array, the second adhesive film layer and the photovoltaic back plate in a stacking mode, the transparent packaging layer is selected from the components with the PID effect resistance, and the components with the PID effect resistance can obviously improve the weather resistance of the glass surface and the glass coating, effectively reduce the generation of the PID attenuation effect on the upper surface of the glass, and simultaneously ensure that the crystalline silicon photovoltaic component has high light transmittance; therefore, the obtained crystalline silicon photovoltaic module with the PID effect resistance can effectively reduce the PID effect and prolong the service life of the crystalline silicon photovoltaic module.
Further, the preparation method of the crystalline silicon photovoltaic module with the PID effect resistance comprises the following steps:
sequentially laminating and gluing the transparent packaging layer, the first adhesive film layer, the crystalline silicon battery pieces arranged in an interval array, the second adhesive film layer and the photovoltaic back plate, gluing and curing the crystalline silicon battery pieces in a high-temperature vacuum environment in a laminating machine, and mounting and fixing frames around the crystalline silicon photovoltaic module; the transparent packaging layer is an assembly with the anti-PID effect, and comprises a glass substrate 1 and a tin oxide layer 2 stacked on any surface of the glass substrate 1, wherein the glass substrate 1 is attached to the first adhesive film layer in the preparation process.
The following description will be given with reference to specific examples.
Example 1
Component for resisting PID effect
Component for resisting PID effect
The component resistant to the PID effect comprises a glass substrate 1; the tin oxide layer 2 is arranged on any surface of the glass substrate, the tin oxide layer 2 comprises a first tin oxide layer 21, and the first tin oxide layer 21 is a transition region formed by penetrating into the surface layer of the glass substrate 1; and the antireflection film layer 3 is arranged on the surface of the tin oxide layer 2, which is far away from the glass substrate 1.
Wherein the glass substrate is selected from silicate glass, the iron content in the provided silicate glass is controlled to be less than 140ppm, the transmittance of the provided silicate glass is ensured to be more than 91%, and the thickness of the glass substrate is 2 mm;
the thickness of the first tin oxide layer is 2 microns;
the anti-reflection film layer is selected from a silicon nitride layer, and the thickness of the anti-reflection film layer is 150 nanometers.
Preparation method of component resisting PID effect
Providing a glass substrate, and forming a glass substrate,
providing a tin solution, and placing one surface of a glass substrate in the tin solution to perform ion exchange reaction to form a first tin oxide layer, wherein the temperature of the ion exchange reaction is 600 ℃, and the time of the ion exchange reaction is 5 minutes;
and preparing an antireflection film layer on the surface of the glass substrate close to the first tin oxide layer by a magnetron sputtering method to obtain the component with the PID effect resistance.
Crystalline silicon photovoltaic module
The crystalline silicon photovoltaic module is sequentially provided with a transparent packaging layer, a first adhesive film layer, crystalline silicon cell pieces arranged in an interval array, a second adhesive film layer and a photovoltaic back plate in a stacking mode, wherein the transparent packaging layer is selected from the modules with the PID effect resistance provided in the embodiment 1.
Example 2
Component for resisting PID effect
Component for resisting PID effect
The component resistant to the PID effect comprises a glass substrate 1; the tin oxide layer 2 is arranged on any surface of the glass substrate, the tin oxide layer 2 comprises a first tin oxide layer 21, and the first tin oxide layer 21 is a transition region formed by penetrating into the surface layer of the glass substrate 1; and the antireflection film layer 3 is arranged on the surface of the tin oxide layer 2, which is far away from the glass substrate 1.
Wherein the glass substrate is selected from silicate glass, the iron content in the provided silicate glass is controlled to be less than 140ppm, the transmittance of the provided silicate glass is ensured to be more than 91%, and the thickness of the glass substrate is 2 mm;
the thickness of the first tin oxide layer was 10 microns;
the anti-reflection film layer is selected from a silicon nitride layer, and the thickness of the anti-reflection film layer is 150 nanometers.
Preparation method of component resisting PID effect
Providing a glass substrate, and forming a glass substrate,
providing a tin solution, placing one surface of a glass substrate in the tin solution to carry out ion exchange reaction to form a first tin oxide layer, wherein the temperature of the ion exchange reaction is 700 ℃, the time of the ion exchange reaction is 10 minutes,
and preparing an antireflection film layer on the surface of the first tin oxide layer, which is far away from the glass substrate, by a magnetron sputtering method to obtain the component with the PID effect resistance.
Crystalline silicon photovoltaic module
The crystalline silicon photovoltaic module is sequentially provided with a transparent packaging layer, a first adhesive film layer, crystalline silicon cell pieces arranged in an interval array, a second adhesive film layer and a photovoltaic back plate in a stacking mode, wherein the transparent packaging layer is selected from the modules with the PID effect resistance provided in the embodiment 2.
Example 3
Component for resisting PID effect
Component for resisting PID effect
The component resistant to the PID effect comprises a glass substrate 1; the tin oxide layer 2 is arranged on any surface of the glass substrate, the tin oxide layer 2 comprises a first tin oxide layer 21, and the first tin oxide layer 21 is a transition region formed by penetrating into the surface layer of the glass substrate 1; and the antireflection film layer 3 is arranged on the surface of the tin oxide layer 2, which is far away from the glass substrate 1.
Wherein the glass substrate is selected from silicate glass, the iron content in the provided silicate glass is controlled to be less than 140ppm, the transmittance of the provided silicate glass is ensured to be more than 91%, and the thickness of the glass substrate is 2 mm;
the thickness of the first tin oxide layer was 15 microns;
the anti-reflection film layer is selected from a silicon nitride layer, and the thickness of the anti-reflection film layer is 150 nanometers.
Preparation method of component resisting PID effect
Providing a glass substrate, and forming a glass substrate,
providing a tin solution, placing one surface of a glass substrate in the tin solution to carry out ion exchange reaction to form a first tin oxide layer, wherein the temperature of the ion exchange reaction is 800 ℃, the time of the ion exchange reaction is 15 minutes,
and preparing an antireflection film layer on the surface of the glass substrate close to the first tin oxide layer by a magnetron sputtering method to obtain the component with the PID effect resistance.
Crystalline silicon photovoltaic module
The crystalline silicon photovoltaic module is sequentially provided with a transparent packaging layer, a first adhesive film layer, crystalline silicon cell pieces arranged in an interval array, a second adhesive film layer and a photovoltaic back plate, wherein the transparent packaging layer is selected from the modules with the PID effect resistance provided in embodiment 3.
Example 4
Component for resisting PID effect
Component for resisting PID effect
The component resistant to the PID effect comprises a glass substrate 1; the tin oxide layer 2 is arranged on any surface of the glass substrate, the tin oxide layer 2 comprises a first tin oxide layer 21, and the first tin oxide layer 21 is a transition region formed by penetrating into the surface layer of the glass substrate 1; and the antireflection film layer 3 is arranged on the surface of the tin oxide layer 2, which is far away from the glass substrate 1.
Wherein the glass substrate is selected from silicate glass, the iron content in the provided silicate glass is controlled to be less than 140ppm, the transmittance of the provided silicate glass is ensured to be more than 91%, and the thickness of the glass substrate is 2 mm;
the thickness of the first tin oxide layer was 20 microns;
the anti-reflection film layer is selected from a silicon nitride layer, and the thickness of the anti-reflection film layer is 150 nanometers.
Preparation method of component resisting PID effect
Providing a glass substrate, and forming a glass substrate,
providing a tin solution, placing one surface of a glass substrate in the tin solution to carry out ion exchange reaction to form a first tin oxide layer, wherein the temperature of the ion exchange reaction is 1000 ℃, the time of the ion exchange reaction is 20 minutes,
and preparing an antireflection film layer on the surface of the glass substrate close to the first tin oxide layer by a magnetron sputtering method to obtain the component with the PID effect resistance.
Crystalline silicon photovoltaic module
The crystalline silicon photovoltaic module is sequentially provided with a transparent packaging layer, a first adhesive film layer, crystalline silicon cell pieces arranged in an interval array, a second adhesive film layer and a photovoltaic back plate, wherein the transparent packaging layer is selected from the modules with the PID effect resistance provided in embodiment 4.
Example 5
Component for resisting PID effect
Component for resisting PID effect
The component resistant to the PID effect comprises a glass substrate 1; the tin oxide layer 2 is arranged on any surface of the glass substrate, the tin oxide layer 2 comprises a first tin oxide layer 21, and the first tin oxide layer 21 is a transition region formed by penetrating into the surface layer of the glass substrate 1; and the antireflection film layer 3 is arranged on the surface of the tin oxide layer 2, which is far away from the glass substrate 1.
Wherein the glass substrate is selected from silicate glass, the iron content in the provided silicate glass is controlled to be less than 140ppm, the transmittance of the provided silicate glass is ensured to be more than 91%, and the thickness of the glass substrate is 2 mm;
the thickness of the first tin oxide layer was 15 microns;
the anti-reflection film layer is selected from a silicon nitride layer, and the thickness of the anti-reflection film layer is 150 nanometers.
Preparation method of component resisting PID effect
Providing a glass substrate, and forming a glass substrate,
providing a tin solution, placing one surface of a glass substrate in the tin solution to carry out ion exchange reaction to form a first tin oxide layer, wherein the temperature of the ion exchange reaction is 1100 ℃, the time of the ion exchange reaction is 25 minutes,
and preparing an antireflection film layer on the surface of the glass substrate close to the first tin oxide layer by a magnetron sputtering method to obtain the component with the PID effect resistance.
Crystalline silicon photovoltaic module
The crystalline silicon photovoltaic module is sequentially provided with a transparent packaging layer, a first adhesive film layer, crystalline silicon cell pieces arranged in an interval array, a second adhesive film layer and a photovoltaic back plate, wherein the transparent packaging layer is selected from the modules with the PID effect resistance provided in embodiment 5.
Example 6
Component for resisting PID effect
Component for resisting PID effect
The component resistant to the PID effect comprises a glass substrate 1; a tin oxide layer 2 disposed on either side of the glass substrate, the tin oxide layer 2 including a second tin oxide layer 22; and the antireflection film layer 3 is arranged on the surface of the tin oxide layer 2, which is far away from the glass substrate 1.
Wherein the glass substrate is selected from silicate glass, the iron content in the provided silicate glass is controlled to be less than 140ppm, the transmittance of the provided silicate glass is ensured to be more than 91%, and the thickness of the glass substrate is 2 mm;
the thickness of the second tin oxide layer was 0.02 microns;
the anti-reflection film layer is selected from a silicon nitride layer, and the thickness of the anti-reflection film layer is 150 nanometers.
Preparation method of component resisting PID effect
Providing a glass substrate, and forming a glass substrate,
arranging a second tin oxide layer on any outer surface of the glass substrate by a magnetron sputtering method,
and arranging an antireflection film layer on the surface of the second tin oxide layer, which is far away from the glass substrate, by a magnetron sputtering method.
Crystalline silicon photovoltaic module
The crystalline silicon photovoltaic module is sequentially provided with a transparent packaging layer, a first adhesive film layer, crystalline silicon cell pieces arranged in an interval array, a second adhesive film layer and a photovoltaic back plate, wherein the transparent packaging layer is selected from the modules with the PID effect resistance provided in embodiment 6.
Example 7
Component for resisting PID effect
Component for resisting PID effect
The component resistant to the PID effect comprises a glass substrate 1; a tin oxide layer 2 disposed on either side of the glass substrate, the tin oxide layer 2 including a first tin oxide layer 21 and a second tin oxide layer 22; the antireflection film layer 3 is arranged on the surface of the tin oxide layer 2, which is far away from the glass substrate 1; wherein, the first tin oxide layer 21 is a transition region formed by penetrating into the surface layer of the glass substrate 1; the second tin oxide layer 22 is laminated and bonded to the surface of the first tin oxide layer 21 facing away from the glass substrate 1.
Wherein the glass substrate is selected from silicate glass, the iron content in the provided silicate glass is controlled to be less than 140ppm, the transmittance of the provided silicate glass is ensured to be more than 91%, and the thickness of the glass substrate is 2 mm;
the thickness of the first tin oxide layer was 20 microns;
the thickness of the second tin oxide layer is 0.02 micrometer;
the anti-reflection film layer is selected from a silicon nitride layer, and the thickness of the anti-reflection film layer is 150 nanometers.
Preparation method of component resisting PID effect
Providing a glass substrate, and forming a glass substrate,
providing a tin solution, placing one surface of a glass substrate in the tin solution to carry out ion exchange reaction to form a first tin oxide layer, wherein the temperature of the ion exchange reaction is 1000 ℃, the time of the ion exchange reaction is 20 minutes,
arranging a second tin oxide layer on any outer surface of the glass substrate by a magnetron sputtering method,
and arranging an antireflection film layer on the surface of the second tin oxide layer, which is far away from the glass substrate, by a magnetron sputtering method.
Crystalline silicon photovoltaic module
The crystalline silicon photovoltaic module is sequentially provided with a transparent packaging layer, a first adhesive film layer, crystalline silicon cell pieces arranged in an interval array, a second adhesive film layer and a photovoltaic back plate, wherein the transparent packaging layer is selected from the modules with the anti-PID effect provided in embodiment 9.
Comparative example 1
Photovoltaic module
Photovoltaic module
The photovoltaic module comprises a glass substrate and an antireflection film layer arranged on any surface of the glass substrate,
wherein the glass substrate is selected from silicate glass, the iron content in the provided silicate glass is controlled to be less than 140ppm, the transmittance of the provided silicate glass is ensured to be more than 91%, and the thickness of the glass substrate is 2 mm;
the anti-reflection film layer is selected from a silicon nitride layer, and the thickness of the anti-reflection film layer is 150 nanometers.
Preparation method of photovoltaic module
Providing a glass substrate, and forming a glass substrate,
and arranging an antireflection film layer on any surface of the glass substrate by a magnetron sputtering method.
Crystalline silicon photovoltaic module
The crystalline silicon photovoltaic module is sequentially provided with a transparent packaging layer, a first adhesive film layer, crystalline silicon cell pieces arranged in an interval array, a second adhesive film layer and a photovoltaic back plate, wherein the transparent packaging layer is selected from the photovoltaic module provided in the comparative example 1.
Property testing
Comprehensive generated energy property test of (I) crystalline silicon photovoltaic module
And performing power generation amount statistics on the crystalline silicon photovoltaic modules provided in the embodiments 1 to 7 and the comparative example 1, and analyzing the comprehensive power generation amount conditions of the crystalline silicon photovoltaic modules under normal conditions and severe environments.
And (II) analyzing the mechanism of the PID effect resisting component photovoltaic for exerting the PID effect resisting.
Analysis of results
Comprehensive generated energy property test of (I) crystalline silicon photovoltaic module
The generated energy statistics of the crystalline silicon photovoltaic modules provided in the embodiments 1 to 7 and the comparative example 1 are performed, wherein the power of polycrystalline silicon per square meter is 150W, and the comprehensive generated energy condition of the crystalline silicon photovoltaic modules is shown in the following table 1, and it can be seen that the comprehensive generated energy of the crystalline silicon photovoltaic modules obtained in the embodiments 1 to 7 is higher than that of the crystalline silicon photovoltaic modules obtained in the comparative example 1.
TABLE 1
Mechanism analysis of anti-PID effect exerted by anti-PID effect component
Since the weatherability of glass is mainly affected by the migration of sodium ions, the faster the migration, the more the glass is damaged. The migration of sodium ions can be inhibited by the tin oxide layer, and the weather resistance of the glass surface and the weather resistance of the AR coating film can be obviously improved. Further suppressing the occurrence of PID. And the photoelectric conversion efficiency of the crystalline silicon photovoltaic module is improved.
Analysis of the mechanism of the PID effect resistance of the assembly provided in example 1 shows that, as shown in FIG. 6, hydrogen ions contained in the water vapor and salt mist in the air can be replaced with sodium calcium ions in the glass and then with CO in the air2The calcium carbonate generated by the reaction is deposited on the surface of the glass, and the light transmittance and the appearance of the glass are influenced. Conventional anti-reflective (AR) coatings even exacerbate such phenomena. In the assembly provided by the example 1 for resisting the PID effect, the tin oxide layer can inhibit the migration of sodium ions and calcium ions in the glass, and the excessive migration is avoidedAnd the anti-PID effect is exerted, and the appearance of the component is maintained.
In summary, the present application provides a component for resisting PID effect, wherein the component for resisting PID effect comprises a glass substrate and tin oxide layers disposed on either side of the glass substrate. The formation of the PID effect is mainly characterized in that a glass substrate contains a large amount of sodium ions and calcium ions, and the sodium ions, the calcium ions and hydrogen ions in water are exchanged to form a series of reactions to cause the generation of the PID effect, and a tin oxide layer is arranged on any surface of the glass substrate, so that the ionic radius of the tin ions is smaller than that of the sodium ions and the calcium ions, the ionic potential energy is stronger, the binding capacity with oxygen atoms is stronger, the glass network structure can be enhanced, the glass network structure is more compact, the migration of the sodium ions and the calcium ions is limited, carbonates containing the sodium ions and the calcium ions are not formed on the surface of the glass, the glass is protected from serious erosion, the weather resistance of the surface of the glass and a glass coating film can be obviously improved, and the generation of the PID attenuation effect on the upper surface of the glass is effectively reduced; meanwhile, the tin oxide layer has small influence on the light transmittance of the whole glass, so that the obtained assembly has strong PID effect resistance, excellent integral performance and wide application.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. An anti-PID effect component, characterized in that it comprises a glass substrate, tin oxide layers arranged on either side of the glass substrate.
2. The PID effect resistant component of claim 1, wherein the tin oxide layer comprises a first tin oxide layer that is a transition zone formed by penetration into a surface layer of the glass substrate.
3. The PID resistant component of claim 2, wherein the transition region has a thickness of 2-25 μm.
4. The PID effect resistant assembly of claim 1, wherein the tin oxide layer comprises a second tin oxide layer that is layer-bonded to a surface of the glass substrate.
5. The PID effect resistant assembly of claim 1, wherein the tin oxide layer comprises a first tin oxide layer and a second tin oxide layer, the first tin oxide layer being a transition zone formed by penetration into a surface layer of the glass substrate; the second tin oxide layer is bonded to a surface of the first tin oxide layer facing away from the glass substrate.
6. The PID effect resistant assembly of claim 4 or 5 wherein the second tin oxide layer is 0.01 to 0.05 microns.
7. The PID effect resistant assembly according to any one of claims 1 to 5, further comprising: and arranging an antireflection film layer on the surface of the tin oxide layer, which is far away from the glass substrate, wherein the thickness of the antireflection film layer is 150-180 nanometers.
8. A method for preparing a component resisting PID effect is characterized by comprising the following steps:
providing a glass substrate, and forming a glass substrate,
and arranging a tin oxide layer on any surface of the glass substrate to obtain the component with the PID effect resistance.
9. The method of preparing a PID effect resistant assembly according to claim 8, wherein the step of providing a tin oxide layer on either side of the glass substrate comprises:
providing a tin solution, and placing one surface of the glass substrate in the tin solution to perform an ion exchange reaction to form a tin oxide layer, wherein the conditions for performing the ion exchange reaction are as follows: under the reducing atmosphere, the temperature of the ion exchange reaction is 600-1100 ℃, and the time of the ion exchange reaction is 5-30 minutes.
10. The crystalline silicon photovoltaic module is characterized in that a transparent packaging layer, a first adhesive film layer, crystalline silicon cell pieces arranged in an interval array, a second adhesive film layer and a photovoltaic back plate are sequentially stacked, wherein the transparent packaging layer is selected from the PID effect resistant module according to any one of claims 1 to 7.
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| CN101527325A (en) * | 2009-04-03 | 2009-09-09 | 中国南玻集团股份有限公司 | Transparent conductive substrate for solar cell |
| CN104159861A (en) * | 2012-03-05 | 2014-11-19 | 法国圣戈班玻璃厂 | Sheet with coating which reflects thermal radiation |
| CN102910837A (en) * | 2012-10-16 | 2013-02-06 | 中国科学院上海技术物理研究所 | Intelligent low-emissivity coated glass capable of offline tempering and preparation method thereof |
| CN103539365A (en) * | 2013-10-09 | 2014-01-29 | 河源旗滨硅业有限公司 | Reflective solar-control low-emissivity coated glass and preparation method thereof |
| CN103840036A (en) * | 2014-04-01 | 2014-06-04 | 润峰电力有限公司 | Preparation technology of PID resistance photovoltaic module |
| CN103928535A (en) * | 2014-04-25 | 2014-07-16 | 中利腾晖光伏科技有限公司 | PID resistance crystalline silicon battery and preparation method thereof |
| CN207097836U (en) * | 2017-07-06 | 2018-03-13 | 泰州隆基乐叶光伏科技有限公司 | A kind of anti-PID photovoltaic glass |
| CN214797430U (en) * | 2021-02-04 | 2021-11-19 | 郴州旗滨光伏光电玻璃有限公司 | PID effect resistant assembly and PID effect resistant crystalline silicon photovoltaic assembly |
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Address after: 423000 No. 9 Jianggao Road, Ziwu Industrial Park, Tangdong street, Zixing City, Chenzhou City, Hunan Province Applicant after: Hunan Qibin Solar Technology Co.,Ltd. Address before: 423000 No. 9 Jianggao Road, Ziwu Industrial Park, Tangdong street, Zixing City, Chenzhou City, Hunan Province Applicant before: CHENZHOU QIBIN PHOTOVOLTAIC AND PHOTOELECTRIC GLASS Co.,Ltd. |
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