CN112820332A - Controllable dissolution hybrid memory, preparation method and information reading method thereof - Google Patents
Controllable dissolution hybrid memory, preparation method and information reading method thereof Download PDFInfo
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- G—PHYSICS
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- G11C—STATIC STORES
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- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/42—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically- coupled or feedback-coupled
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
Abstract
The invention relates to the technical field of information storage, in particular to a controllable dissolution hybrid memory, a preparation method and an information reading method thereof. The memory is provided with an optical diffraction memory unit, an electromagnetic metamaterial memory unit and a resistance change memory unit; the hybrid memory comprises an optical diffraction layer, a first metal layer, an insulating layer, an electromagnetic metamaterial layer and a second metal layer which are sequentially arranged; the optical diffraction layer constitutes an optical diffraction storage unit; the first metal layer, the insulating layer and the electromagnetic metamaterial layer form an electromagnetic metamaterial storage unit; the first metal layer, the insulating layer and the second metal layer constitute a resistance change memory unit. The controlled dissolution hybrid memory is capable of storing optical, electromagnetic, and electrical information, etc. simultaneously in the memory. Through multi-mode mixed coding and controllable dissolution, multi-level controllable degradation can be realized, and information preset in a memory can be displayed along with degradation in a hierarchical mode, so that encryption, decryption and destruction of stored information on a physical layer are realized.
Description
Technical Field
The invention relates to the technical field of information storage, in particular to a controllable dissolution hybrid memory, a preparation method and an information reading method thereof.
Background
Transient electronic devices refer to a brand new type of electronic devices in which the physical form and function thereof may be partially or completely disappeared within a predetermined time after the device has completed a designated function. The transient electronic device can also reduce the pollution of waste electronic products to the natural environment, and can be applied to the fields of implantable and wearable medical electronics and the like. In addition, since the bioprotein has the advantages of good mechanical properties, good light transmission, adjustable dielectric properties and degradation properties, the bioprotein is widely used for optical devices, electronic devices, implantable degradable devices and the like.
After the transient resistive random access memory manufactured based on the biological protein finishes information storage and information reading, the physical form and the device function can be partially or completely disappeared through a chemical or physical process under the starting of an external stimulus or a related program, the risk of information leakage in a traditional chip can be effectively avoided, and the transient resistive random access memory has very important significance for ensuring data safety. However, the resistive random access memory can only store electrical information, and cannot realize multi-mode and multi-level degradation of devices and encryption, decryption and destruction of a physical layer of stored information, and the risk of information leakage still exists, so that the application range of the transient memory is limited.
Disclosure of Invention
The invention aims to solve the technical problem that the existing memory cannot realize multi-mode and multi-level degradation of devices and encryption, decryption and destruction of a physical layer of stored information.
In order to solve the technical problem, in a first aspect, an embodiment of the present application discloses a controllable dissolution hybrid memory, which includes an optical diffraction memory cell, an electromagnetic metamaterial memory cell, and a resistance change memory cell;
the hybrid memory comprises an optical diffraction layer, a first metal layer, an insulating layer, an electromagnetic metamaterial layer and a second metal layer which are sequentially arranged;
the optical diffraction layer constitutes the optical diffraction storage unit;
the first metal layer, the insulating layer and the electromagnetic metamaterial layer form the electromagnetic metamaterial storage unit;
the first metal layer, the insulating layer and the second metal layer constitute the resistive memory unit.
Further, the material of the optical diffraction layer is biological protein; and/or the presence of a gas in the gas,
the insulating layer is made of biological protein.
Further, the biological protein is one of silk fibroin, sericin, spidroin, deer antler protein, egg white protein and collagen.
Further, the thickness of the optical diffraction layer is 1-500 μm; and/or the presence of a gas in the gas,
the thickness of the insulating layer is 0.01-100 μm.
Further, the electromagnetic metamaterial layer is provided with an electromagnetic metamaterial storage array; and/or the presence of a gas in the gas,
the thickness of the electromagnetic metamaterial layer is 10nm-10000 nm.
Further, the material of the first metal layer is one of gold, silver, aluminum, iron, copper, platinum, titanium, zinc, chromium, tungsten and nickel; and/or the presence of a gas in the gas,
the thickness of the first metal layer is 10nm-10000 nm.
Furthermore, the second metal layer is made of one of gold, silver, aluminum, iron, copper, platinum, titanium, zinc, chromium, tungsten and nickel; and/or the presence of a gas in the gas,
the thickness of the second metal layer is 10nm-10000 nm.
In a second aspect, an embodiment of the present application discloses a method for preparing a controlled dissolution hybrid memory, including:
manufacturing an optical diffraction layer to form an optical diffraction storage unit;
manufacturing a first metal layer on the optical diffraction layer;
manufacturing an insulating layer on the first metal layer;
manufacturing an electromagnetic metamaterial layer on the insulating layer, so that the first metal layer, the insulating layer and the electromagnetic metamaterial layer form an electromagnetic metamaterial storage unit;
and manufacturing a second metal layer on the electromagnetic metamaterial layer, so that the first metal layer, the insulating layer and the second metal layer form a resistive random access memory unit.
Further, the manufacturing of the optical diffraction layer to form the optical diffraction memory cell includes:
obtaining a substrate, and manufacturing an optical diffraction grating on the substrate;
casting a first protein solution on the optical diffraction grating;
drying the optical diffraction grating after the first protein solution is poured to form a first biological protein film by the protein solution;
and stripping the first biological protein film from the optical diffraction grating to form an optical diffraction storage unit.
Further, the manufacturing of the insulating layer on the first metal layer includes:
spin coating a second protein solution on the first metal layer;
and drying the second protein solution to form a second biological protein film to obtain the insulating layer.
Further, after the manufacturing the optical diffraction layer to form the optical diffraction memory cell, the method further includes: performing degradation characteristic treatment on the optical diffraction storage unit; and/or the presence of a gas in the gas,
after the electromagnetic metamaterial layer is manufactured on the insulating layer, so that the first metal layer, the insulating layer and the electromagnetic metamaterial layer form an electromagnetic metamaterial storage unit, the method further comprises the following steps: and performing degradation characteristic treatment on the electromagnetic metamaterial storage unit.
In a third aspect, an embodiment of the present application discloses an information reading method for a controlled dissolution hybrid memory, including:
reading storage information in the resistance change storage unit; the resistive random access memory unit comprises a first metal layer, an insulating layer and a second metal layer;
degrading the second metal layer, and reading storage information in the electromagnetic metamaterial storage unit; the electromagnetic metamaterial storage unit comprises the first metal layer, the insulating layer and an electromagnetic metamaterial layer;
degrading the first metal layer, the insulating layer and the electromagnetic metamaterial layer, and reading storage information in an optical diffraction storage unit; the optically diffractive memory cell includes an optically diffractive layer.
Further, the degradation treatment is to degrade the structure to be degraded using a degradation solution including at least one of an aqueous solution, a physiological saline, a buffer, an ionic solution, an acid solution, an alkali solution, and an enzyme solution.
By adopting the technical scheme, the controllable dissolution hybrid memory, the preparation method and the information reading method thereof have the following beneficial effects:
the controllable dissolving hybrid memory provided by the embodiment of the application respectively uses the resistive random access memory unit to store electronic information and uses the electromagnetic metamaterial memory unit to store electromagnetic information; optical information is stored using an optically diffractive memory cell, enabling optical, electromagnetic, and electrical information, etc., to be stored simultaneously in the memory. The controllable dissolving mixed memory can realize multi-level controllable degradation through multi-mode mixed coding and controllable dissolving, and information preset in the memory can be displayed in a hierarchical mode along with degradation, so that encryption, decryption and destruction of stored information on a physical layer are realized.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a controllable dissolution mixing memory according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of an optical diffraction memory cell according to an embodiment of the present disclosure;
FIG. 3 is a schematic structural diagram of an optical diffraction memory cell according to an embodiment of the present application;
FIG. 4 is a schematic diagram of an information storage of an optical diffraction storage unit according to an embodiment of the present application;
FIG. 5 is a schematic structural diagram of an electromagnetic metamaterial memory cell according to an embodiment of the present disclosure;
fig. 6 is a schematic structural diagram of a metamaterial resonant ring according to an embodiment of the present disclosure;
FIG. 7 is a schematic diagram illustrating an information storage of an electromagnetic metamaterial memory unit according to an embodiment of the present application;
fig. 8 is a schematic structural diagram of a resistive random access memory cell according to an embodiment of the present application;
FIG. 9 is a scanning electron microscope image of an upper electrode according to an embodiment of the present disclosure;
fig. 10 is a schematic diagram illustrating information storage of a resistive random access memory unit according to an embodiment of the present application;
FIG. 11 is a flowchart of a method for fabricating a controlled solution hybrid memory according to an embodiment of the present disclosure;
FIG. 12 is a flowchart of a method for fabricating an optical diffraction memory cell according to an embodiment of the present disclosure;
FIG. 13 is a flowchart of a method for manufacturing an electromagnetic metamaterial memory unit according to an embodiment of the present disclosure;
fig. 14 is a flowchart of a method for manufacturing a resistive random access memory unit according to an embodiment of the present application;
FIG. 15 is a flowchart of an information reading method for a controlled dissolution hybrid memory according to an embodiment of the present disclosure;
the following is a supplementary description of the drawings:
101-an optically diffractive layer; 102-a first metal layer; 103-an insulating layer; 104-an electromagnetic metamaterial layer; 105-a second metal layer; 106-storage area; 201-a substrate; 202-silicon oxide; 203-photoresist; 204-mask.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the present application. In the description of the present application, it is to be understood that the terms "upper", "lower", "top", "bottom", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. Moreover, the terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein.
The resistive random access memory as the next generation of nonvolatile memory device with the best application prospect has the advantages of low energy consumption, high read-write speed, high storage density, simple structure, compatibility with the existing process and the like. The resistive random access memory is generally of a traditional sandwich structure, namely an electrode layer/a resistive random access memory layer/an electrode layer structure, and fibroin serving as an excellent dielectric material can serve as a resistive layer of the resistive random access memory. The resistive random access memory based on the fibroin has the advantages of low operating voltage, easy erasing and writing of data, large reading tolerance, long retention time, more cycle times and the like.
The electromagnetic metamaterial is a novel artificial material capable of modulating electromagnetic waves, and generally consists of sub-wavelength metal resonators which are manufactured on an insulating dielectric substrate and are periodically arranged. Unlike the conventional natural material whose electromagnetic properties are mainly determined by the atomic or molecular structure, the electromagnetic properties of the electromagnetic metamaterial are mainly determined by the structure of the metal resonant unit array. The metamaterial is an artificial harmonic oscillator array structure in nature although the metamaterial is called as a material, and the performance of the metamaterial is mainly determined by the structure of harmonic oscillators rather than the physical properties of the material used for constructing the harmonic oscillators. Therefore, the electromagnetic response characteristics of the metamaterial can be changed by artificially defining the structure of the metamaterial, so that the metamaterial can be used for storing specific information.
The optical diffraction element can be used for converting light beams with specific wavelengths into diffraction spot patterns with any shapes, and the specific micro-nano structure is designed to control the phase distribution of incident light, so that the field intensity distribution of transmitted light can be regulated and controlled, and the required diffraction patterns can be obtained. The optical diffraction element based on the fibroin can be used for sensing technologies such as refractive index detection, the biomedical field such as drug carrier regulation and control of drug release speed and real-time monitoring and the like, and in addition, the optical diffraction element can also be used for the fields of information storage, information encryption and the like by designing a specific diffraction pattern.
Based on the characteristics of the device, the embodiment of the application provides a controllable dissolving hybrid memory. Fig. 1 is a schematic structural diagram of a controlled dissolution hybrid memory provided in an embodiment of the present application, and as shown in fig. 1, the controlled dissolution hybrid memory includes an optical diffraction memory cell, an electromagnetic metamaterial memory cell, and a resistance change memory cell. The hybrid memory includes an optical diffraction layer 101, a first metal layer 102, an insulating layer 103, an electromagnetic metamaterial layer 104, and a second metal layer 105, which are sequentially disposed. The optical diffraction layer 101 constitutes an optical diffraction storage unit. The first metal layer 102, the insulating layer 103 and the electromagnetic metamaterial layer 104 constitute an electromagnetic metamaterial memory cell. The first metal layer 102, the insulating layer 103, and the second metal layer 105 constitute a resistance change memory cell.
In the embodiment of the present application, as shown in fig. 1, the controllably dissolvable hybrid memory has a multi-layer structure, and the single layer is an array structure. From bottom to top are an optical diffraction layer 101, a first metal layer 102, an insulating layer 103, an electromagnetic metamaterial layer 104 and a second metal layer 105. The controllable dissolving hybrid memory comprises an optical diffraction memory unit, an electromagnetic metamaterial memory unit and a resistance change memory unit, wherein the three memory units work independently and do not influence each other. Each memory unit may include several memory regions 106 therein.
In the embodiment of the present application, as shown in fig. 1, an optical structure is disposed on the bottom-most optical diffraction layer 101 to form an optical diffraction storage unit, the optical diffraction layer 101 is made of bioprotein, and the optical diffraction storage unit serves as a substrate 201 of the entire device structure. Alternatively, the optical diffraction memory cell can employ a visible light optical structure, such as a red, green, blue, or other visible light optical structure. Fig. 2 is a schematic structural diagram of an optical diffraction storage unit according to an embodiment of the present application, and as shown in fig. 2, the optical diffraction storage unit has 16 storage regions 106, and a microstructure in each storage region 106 is different, that is, an optical structure is different, so that different optical information is stored. Fig. 3 is a schematic structural diagram of an optical diffraction memory cell according to an embodiment of the present disclosure, where fig. 3a is a schematic structural diagram of an optical diffraction memory cell according to an embodiment, and fig. 3b is a scanning electron microscope diagram of an optical diffraction memory cell according to an embodiment, as shown in fig. 3, optical diffraction is made of fibroin, an optical diffraction layer 101 made of fibroin is similar to a transparent film, and a pattern with a grating structure is disposed in a middle portion of one side of the optical diffraction layer 101 to form the optical diffraction memory cell. Incident light enters the optical diffraction storage unit, and forms emergent light after diffraction, so that a pattern can be formed on a far screen. In some embodiments, by designing some diffraction patterns, optical structures of different structures can be illuminated with different wavelengths of light, corresponding to different colors. Fig. 4 is a schematic diagram of information storage of an optical diffraction storage unit provided in an embodiment of the present application, as shown in fig. 4, specifically, information stored in the optical diffraction storage unit may be directly stored in a pattern, as shown in fig. 4 (a), or may be represented by "0" and "1" using different patterns. As shown in fig. 4b, pattern shades may also be used to represent "0" and "1".
In the embodiment of the present application, as shown in fig. 1, an electromagnetic metamaterial storage unit is disposed above the optical diffraction storage unit, and optionally, a waveband of an incident electromagnetic wave of the electromagnetic metamaterial storage unit is a terahertz waveband or a GHz. The electromagnetic metamaterial memory cell includes a first metal layer 102, an insulating layer 103, and an electromagnetic metamaterial layer 104. Wherein the first metal layer 102 is a whole layer disposed on the optical diffraction layer 101. The first metal layer 102 may serve as a lower electrode of the resistive random access memory cell and a reflective layer of the electromagnetic metamaterial memory cell. Above the first metal layer 102 is an insulating layer 103, optionally, the insulating layer 103 is made of bioprotein. Above the insulating layer 103 is an electromagnetic metamaterial layer 104, and optionally, the electromagnetic metamaterial layer 104 is a metamaterial resonant ring. Because the specific resonant frequency of the electromagnetic metamaterial memory cell is mainly determined by the designed metamaterial resonant ring, and the material relationship with the electromagnetic metamaterial layer 104 is not large, the material of the electromagnetic metamaterial layer 104 only needs to be a conductor. Fig. 5 is a schematic structural diagram of an electromagnetic metamaterial memory cell according to an embodiment of the present application, and as shown in fig. 5, the electromagnetic metamaterial memory cell has 16 storage regions 106, and a structure of a metamaterial resonant ring in each storage region 106 is different. Different electromagnetic information is stored due to the fact that the metamaterial resonant ring structure in each storage region 106 is different. Fig. 6 is a schematic structural diagram of a metamaterial resonant ring according to an embodiment of the present disclosure, where fig. 6a is a schematic structural diagram of a metamaterial resonant ring according to an embodiment, and fig. 6b is a schematic structural diagram of a metamaterial resonant ring according to another embodiment, as shown in fig. 6, an electromagnetic metamaterial layer 104 is a patterned structure, and the layer may include a plurality of storage area 106 units. The metamaterial resonant ring structure of each storage region 106 is a periodically arranged array, the array structure or the period of different storage regions 106 is different, and the resonant structure of the metamaterial resonant ring in each storage region 106 as a whole can absorb electromagnetic waves of a specific frequency. Fig. 7 is a schematic diagram illustrating information storage of an electromagnetic metamaterial storage unit according to an embodiment of the present application, and as shown in fig. 7, specifically, stored information of the electromagnetic metamaterial storage unit may be irradiated onto the electromagnetic metamaterial storage unit through incident electromagnetic waves, and reflected after a peak of a specific frequency is absorbed by the electromagnetic metamaterial storage unit, peaks of the reflected electromagnetic waves are tested, and "0" and "1" are encoded according to different peak conditions.
In the embodiment of the application, as shown in fig. 1, a resistive random access memory unit is arranged above an electromagnetic metamaterial memory unit, and the resistive random access memory unit includes a first metal layer 102, an insulating layer 103, and a second metal layer 105. The first metal layer 102 is a lower electrode of a resistive random access memory unit, the insulating layer 103 is a resistive random access memory layer of the resistive random access memory, the second metal layer 105 is arranged on the electromagnetic metamaterial layer 104, and the second metal layer 105 is an electrode layer which is an upper electrode of the resistive random access memory unit. Fig. 8 is a schematic structural diagram of a resistive memory cell according to an embodiment of the present disclosure, as shown in fig. 8, the resistive memory cell has 16 memory regions 106, the first metal layer 102 and the insulating layer 103 are both of a monolithic structure, and the second metal layer 105 has a plurality of upper electrodes opposite to the memory regions 106, that is, one upper electrode is disposed in each memory region 106. Fig. 9 is a scanning electron microscope image of an upper electrode according to an embodiment of the present application, and fig. 9 shows a circular upper electrode. In some embodiments, the upper electrode may also be regular in shape, such as rectangular, triangular, etc., or irregular in shape. Fig. 10 is a schematic diagram of information storage of a resistive random access memory cell provided in an embodiment of the present application, and as shown in fig. 10, by applying a voltage between each upper electrode and each lower electrode, "0" and "1" are written in the resistive random access memory cell, so as to achieve storage of electrical information.
In the embodiment of the application, the first metal layer 102 and the insulating layer 103 are shared by the electromagnetic metamaterial memory cell and the resistive random access memory cell, so that the electromagnetic metamaterial layer 104 of the electromagnetic metamaterial memory cell exists between the second metal layer 105 and the insulating layer 103 of the resistive random access memory cell. The upper electrode in the second metal layer 105 shields a part of the metamaterial resonant ring in the electromagnetic metamaterial layer 104, so that the hiding of the lower layer information is realized. The resonant structure of the metamaterial resonant ring is at least partially uncovered by the upper electrode. This is because the electromagnetic metamaterial layer 104 and the second metal layer 105 are both made of conductive materials, and a certain gap needs to be left in order to prevent the upper electrodes of the upper layers from being conducted with each other.
In the embodiment of the present application, both the optical diffraction layer 101 and the insulating layer 103 are made of biological protein, and optionally, the biological protein may be any one of silk fibroin, sericin, spidroin, deer-horn protein, egg white protein, collagen, and the like. Alternatively, the optical diffraction layer 101 and the insulating layer 103 may be the same type of biological protein. Alternatively, the optical diffraction layer 101 and the insulating layer 103 are different in the kind of biological protein. The first metal layer 102, the second metal layer 105 and the electromagnetic metamaterial layer 104 can be fabricated by thermally evaporating metal. In some embodiments, the metal layer can be formed by any method capable of depositing metal, such as electron beam evaporation, magnetron sputtering, and the like. In the preparation process of the second metal layer 105, since a plurality of upper electrodes exist in the second metal layer 105, and in order to ensure that each upper electrode is not conducted, the second metal layer 105 may be manufactured as follows: a mask plate 204 with patterns is covered on the device, the positions needing the patterns are hollowed out, and then metal deposition is carried out.
An embodiment of the present application further provides a method for manufacturing a controlled dissolution hybrid memory, and fig. 11 is a flowchart of the method for manufacturing the controlled dissolution hybrid memory provided in the embodiment of the present application, and as shown in fig. 11, the method includes the following steps:
and S1, preparing an optical diffraction storage unit.
In the embodiment of the application, the preparation of the optical diffraction storage unit comprises the following steps:
s11, processing an optical diffraction grating on the substrate 201.
In the embodiment of the present application, in step S11, the substrate 201 is one of silicon, silicon nitride, silicon oxide 202, plastic, quartz, glass, and the like. Preferably, the substrate 201 is silicon oxide 202, silicon nitride, or glass. The mask containing the required stored optical information is designed by optical simulation, for example, by using optical software VirtualLab. Fig. 12 is a flowchart of a method for manufacturing an optical diffraction memory cell according to an embodiment of the present disclosure, and as shown in fig. 12, a substrate 201 is selected, a silicon oxide 202 is thermally grown on the substrate 201, a photoresist 203 is spin-coated on the silicon oxide 202, the mask pattern is transferred onto the substrate 201 by photolithography, and a diffraction grating pattern is defined on the substrate 201 by dry etching. In some embodiments, instead of thermally growing the silicon oxide 202 on the substrate 201, a photoresist 203 may be directly spin-coated on the substrate 201, the mask pattern may be transferred onto the substrate 201 by photolithography, and a diffraction grating pattern may be defined on the substrate 201 by dry etching.
And S12, transferring the optical diffraction grating onto the biological protein film to form the biological protein diffraction optical element.
In the embodiment of the present application, as shown in fig. 12, in step S12, the transferring method includes pouring or spin-coating the bio-protein solution onto the substrate 201, and peeling off the bio-protein from the substrate 201 after the bio-protein is completely dried, so as to obtain the bio-protein optical diffraction layer 101, i.e., the optical diffraction storage unit. Optionally, the concentration of the bioprotein is 1 wt% to 30 wt%. Preferably, the concentration of the bioprotein solution is 7%. Optionally, the thickness of the bioprotein optical diffraction layer 101 is 1 μm to 500 μm. The optical information stored by the optical diffraction unit may be pattern information or character information, or "0" or "1" may be encoded by using different patterns, or "0" or "1" may be encoded by using the light and shade of the pattern.
In some embodiments, after step S12, the method further includes: the degradation characteristic of the optical diffraction unit is adjusted, and the optical diffraction unit is treated by water vapor or ethanol for 0 to 36 hours. The degradation speed of the processed optical diffraction unit is slowed down in the degradation process, and the longer the processing time is, the slower the degradation speed in the subsequent degradation process is.
And S2, preparing an electromagnetic metamaterial storage unit.
In the embodiment of the application, the preparation of the electromagnetic metamaterial storage unit comprises the following steps:
s21, the first metal layer 102 is processed on the optical diffraction element.
In an embodiment of the present application, fig. 13 is a flowchart of a method for manufacturing an electromagnetic metamaterial memory unit according to an embodiment of the present application, as shown in fig. 13, a first metal layer 102 is deposited on an optical diffraction layer 101 by evaporation or sputtering, and a material of the first metal layer 102 is any one of gold, silver, aluminum, iron, copper, platinum, titanium, zinc, chromium, tungsten, nickel, and the like. Optionally, the thickness of the first metal layer 102 is 10nm to 10000 nm. Preferably, the metal layer is aluminum or iron and has a thickness of 100 nm.
S22, spin-coating a layer of bioprotein solution on the first metal layer 102 to form a bioprotein film as the insulating layer 103.
In the embodiment of the application, in step S22, the concentration range of the spun bioprotein solution is 1 wt% to 30 wt%, and the rotation speed of the spinning is 100r/min to 10000 r/min. The specific spin-coating speed can be selected according to different biological protein concentrations and different spin-coating equipment. Preferably, the concentration of the biological protein solution is 7 wt%, and the rotation speed of the spin coating is 1000 r/min. Alternatively, the thickness of the bioprotein film, i.e., the insulating layer 103, is 0.01 μm to 100 μm. Preferably, the thickness of the bioprotein film is 1.5 μm.
In some embodiments, after step S22, the method further includes: and (3) regulating the degradation characteristic of the protein layer of the electromagnetic metamaterial storage unit, and treating the electromagnetic metamaterial storage unit with water vapor or ethanol for 0-36 hours.
S23, processing the electromagnetic metamaterial layer 104 on the biological protein film to form a storage array.
In the embodiment of the present application, in step S23, the structure of the metamaterial resonant ring in the electromagnetic metamaterial layer 104, that is, the electromagnetic information stored in the electromagnetic metamaterial storage unit, is determined through electromagnetic simulation, for example, by performing structural simulation using simulation software CST. And performing structural simulation through electromagnetic simulation software CST to obtain the structure of the metamaterial resonance ring corresponding to the response frequency, and preparing the hard mask 204 corresponding to the structure. As shown in fig. 13, a hard mask 204 is aligned and placed on a biological protein film, i.e. the insulating layer 103, and the structure of the open metamaterial resonant ring is processed on the protein film layer by means of metal evaporation or sputtering. In an alternative embodiment, silicon nitride is deposited on a silicon wafer substrate 201, and then a photoresist 203 is spun on the silicon nitride surface to lithographically define the desired pattern. And etching the silicon nitride with the pattern part by adopting dry etching. And etching silicon by adopting back photoetching, dry etching, opening an etching window and wet etching until the silicon nitride layer stops etching, and leaving a silicon nitride film with a required pattern. The thin film is attached to an insulating layer 103 made of biological protein, metal evaporation is carried out, and an electromagnetic metamaterial layer 104 with a metamaterial resonant ring is formed. Optionally, the electromagnetic metamaterial layer 104 is made of one of gold, silver, aluminum, iron, copper, platinum, titanium, zinc, chromium, tungsten, and nickel. Optionally, the thickness of the electromagnetic metamaterial layer 104 is 10nm to 10000 nm. Preferably, the metal layer is aluminum or iron and has a thickness of 100 nm. The response frequency of the electromagnetic metamaterial storage unit is 0.1GHz-100Thz, the electromagnetic metamaterial unit can be used for storing specific electromagnetic information, 0 or 1 can be coded by testing the response of the electromagnetic metamaterial at a specific frequency, and 0 or 1 can be coded by the response at different frequencies.
And S3, preparing the resistive random access memory unit.
In the embodiment of the application, the preparation of the resistive random access memory unit comprises the following steps:
and S31, processing a second metal layer 105 on the electromagnetic metamaterial layer 104 to form an electrode array.
In the embodiment of the present application, fig. 14 is a flowchart of a method for manufacturing a resistive random access memory unit, and as shown in fig. 14, a hard mask 204 of an electrode structure adapted to a metamaterial resonant ring array is manufactured. The hard mask 204 is aligned to the resonant structure, and the structure of the electrode array is processed on the protein film layer by means of metal evaporation or sputtering. Optionally, the material of the second metal layer 105 is any one of gold, silver, aluminum, iron, copper, platinum, titanium, zinc, chromium, tungsten, nickel, and the like. Optionally, the thickness of the second metal layer 105 is 10nm to 10000 nm. Preferably, the second metal layer 105 is magnesium or zinc with a thickness of 100 nm.
In the embodiment of the application, the resistance state of the memory is changed by applying a scanning voltage to the resistive random access memory unit, as an optional implementation manner, the scanning voltage is applied to change the resistance state from the high resistance state to the low resistance state from a set voltage of 0v-15v, the scanning voltage is applied to change the resistance state from the low resistance state to the high resistance state from a reset voltage of 0v-15v, and the storage of different resistance states of the resistive random access memory unit is realized. The storage of binary information can be performed by defining a high resistance memory "0" and a low resistance memory "1". Preferably, the set voltage ranges from 0 to 5v and the reset voltage ranges from 0 to 5 v. In some embodiments, the applied reset voltage may also be a voltage in the opposite direction of the set voltage.
The method for manufacturing the controllable dissolving hybrid memory according to the embodiment provides the controllable dissolving hybrid memory based on the biological protein, optical information, electromagnetic information, electrical information and the like can be simultaneously stored in the memory, multi-mode and multi-level degradation of the device can be realized, and encryption, decryption and destruction of the stored information at a physical layer can be finally realized.
The embodiment of the application also provides an information reading method of the controllable dissolution hybrid memory, so as to realize controllable degradation of the controllable dissolution hybrid memory and layer-by-layer decoding of the hybrid coding information. Fig. 15 is a flowchart of an information reading method of a controlled dissolving hybrid memory according to an embodiment of the present application, and as shown in fig. 15, the method includes the following steps:
and S151, reading the electrical information in the resistance change memory unit.
In the embodiment of the application, the resistance state of the resistive random access memory unit is read by applying a voltage, and the applied voltage is 0-15 v. Preferably, the voltage for reading the resistance state of the resistance change memory cell is 0.1 v.
S152, degrading an upper electrode of the resistive random access memory unit, and reading electromagnetic information in the electromagnetic metamaterial memory unit.
In the embodiment of the application, the electrode structure of the upper electrode of the resistive random access memory unit is dissolved by using solution dissolution, and the solution involved in the degradation of the controllable dissolution hybrid memory is one of an aqueous solution, a physiological saline solution, a buffer solution, an ionic solution, an acid solution, an alkali solution and an enzyme solution. Preferably, the solution used is an aqueous solution or physiological saline. The reflection-frequency spectrum of the degraded device is tested by THz-TDS, the testing frequency range is 0.1-10THz, and '0' and '1' can be defined by the existence of reflection peaks in a specific range.
And S153, degrading the electromagnetic storage unit and reading the optical information in the optical diffraction storage unit.
In the embodiment of the application, the electromagnetic metamaterial storage unit is dissolved by using solution dissolution, and the solution involved in degrading the controllable dissolution mixing memory is one of an aqueous solution, a normal saline solution, a buffer solution, an ionic solution, an acid solution, an alkali solution and an enzyme solution. Preferably, the solution used is an acid solution. Optical information is obtained by testing the diffraction pattern of the optical diffraction element.
S154, the controllable dissolving mixed memory is completely degraded, and the stored information in the memory is completely annihilated.
In the embodiment of the application, the optical diffraction storage unit is completely degraded by using solution dissolution, the stored information in the controllable dissolution mixing memory is irreversibly destroyed, and the solution involved in the degradation of the controllable dissolution mixing memory is one of an aqueous solution, a normal saline solution, a buffer solution, an ionic solution, an acid solution, an alkali solution and an enzyme solution. Preferably, the solution used is a protease solution.
The embodiment of the application provides a controllable dissolving and mixing memory based on biological protein, which can store optical information, electromagnetic information, electrical information and the like in the memory at the same time, and can realize multi-mode and multi-level degradation of devices and encryption, decryption and destruction of physical layers of stored information.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (13)
1. A controllable dissolving hybrid memory is characterized by comprising an optical diffraction memory unit, an electromagnetic metamaterial memory unit and a resistance change memory unit;
the hybrid memory comprises an optical diffraction layer (101), a first metal layer (102), an insulating layer (103), an electromagnetic metamaterial layer (104) and a second metal layer (105) which are sequentially arranged;
the optical diffraction layer (101) constitutes the optical diffraction storage unit;
the first metal layer (102), the insulating layer (103) and the electromagnetic metamaterial layer (104) form the electromagnetic metamaterial storage unit;
the first metal layer (102), the insulating layer (103), and the second metal layer (105) constitute the resistance change memory unit.
2. The memory according to claim 1, wherein the optical diffraction layer (101) is made of bioprotein; and/or the presence of a gas in the gas,
the insulating layer (103) is made of biological protein.
3. A controlled dissolution mixing memory according to claim 2, wherein the biological protein is one of silk fibroin, sericin, spidroin, deer antler protein, egg white protein, collagen.
4. The controlled dissolution mixing memory according to claim 1, wherein the thickness of the optically diffractive layer (101) is 1 μ ι η to 500 μ ι η; and/or the presence of a gas in the gas,
the thickness of the insulating layer (103) is 0.01-100 μm.
5. The controllable dissolution hybrid memory according to claim 3 or 4, wherein the electromagnetic metamaterial layer (104) has an electromagnetic metamaterial memory array; and/or the presence of a gas in the gas,
the thickness of the electromagnetic metamaterial layer (104) is 10nm-10000 nm.
6. The memory according to claim 5, wherein the first metal layer (102) is made of one of gold, silver, aluminum, iron, copper, platinum, titanium, zinc, chromium, tungsten, and nickel; and/or the presence of a gas in the gas,
the thickness of the first metal layer (102) is 10nm-10000 nm.
7. The memory according to claim 6, wherein the second metal layer (105) is made of one of gold, silver, aluminum, iron, copper, platinum, titanium, zinc, chromium, tungsten, and nickel; and/or the presence of a gas in the gas,
the thickness of the second metal layer (105) is 10nm-10000 nm.
8. A method for preparing a controllable dissolution mixing memory is characterized by comprising the following steps:
manufacturing an optical diffraction layer (101) to form an optical diffraction storage unit;
manufacturing a first metal layer (102) on the optical diffraction layer (101);
manufacturing an insulating layer (103) on the first metal layer (102);
manufacturing an electromagnetic metamaterial layer (104) on the insulating layer (103), so that the first metal layer (102), the insulating layer (103) and the electromagnetic metamaterial layer (104) form an electromagnetic metamaterial storage unit;
and manufacturing a second metal layer (105) on the electromagnetic metamaterial layer (104), so that the first metal layer (102), the insulating layer (103) and the second metal layer (105) form a resistive random access memory unit.
9. The method for preparing a controlled dissolution hybrid memory according to claim 8, wherein the fabricating the optical diffraction layer (101) to form an optical diffraction memory cell comprises:
obtaining a substrate (201), and manufacturing an optical diffraction grating on the substrate (201);
casting a first protein solution on the optical diffraction grating;
drying the optical diffraction grating after the first protein solution is poured to form a first biological protein film by the protein solution;
and stripping the first biological protein film from the optical diffraction grating to form an optical diffraction storage unit.
10. The method for preparing a controlled dissolution hybrid memory according to claim 9, wherein the fabricating an insulating layer (103) on the first metal layer (102) comprises:
spin coating a second protein solution on the first metal layer (102);
and drying the second protein solution to form a second biological protein film to obtain the insulating layer (103).
11. The method for preparing a controlled dissolution hybrid memory according to claim 10, further comprising, after the fabricating the optical diffraction layer (101) to form an optical diffraction memory cell: performing degradation characteristic treatment on the optical diffraction storage unit; and/or the presence of a gas in the gas,
after the electromagnetic metamaterial layer (104) is manufactured on the insulating layer (103) so that the first metal layer (102), the insulating layer (103) and the electromagnetic metamaterial layer (104) form an electromagnetic metamaterial storage unit, the method further comprises the following steps: and performing degradation characteristic treatment on the electromagnetic metamaterial storage unit.
12. An information reading method of a controlled dissolution hybrid memory is characterized by comprising the following steps:
reading storage information in the resistance change storage unit; the resistive random access memory unit comprises a first metal layer (102), an insulating layer (103) and a second metal layer (105);
degrading the second metal layer (105) and reading storage information in the electromagnetic metamaterial storage unit; the electromagnetic metamaterial storage unit comprises the first metal layer (102), the insulating layer (103) and an electromagnetic metamaterial layer (104);
degrading the first metal layer (102), the insulating layer (103) and the electromagnetic metamaterial layer (104), and reading storage information in an optical diffraction storage unit; the optically diffractive memory cell includes an optically diffractive layer (101).
13. The method for reading information of a controlled dissolution hybrid memory according to claim 12, wherein the degradation process is degradation using a degradation solution to be degraded, the degradation solution comprising at least one of an aqueous solution, a physiological saline, a buffer, an ionic solution, an acid solution, an alkali solution, and an enzyme solution.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1321890A1 (en) * | 2001-12-18 | 2003-06-25 | Istituto Poligrafico E Zecca Dello Stato | Optical data carrier having an optical diffractive code, and related reading apparatus |
| US6891791B1 (en) * | 1999-08-19 | 2005-05-10 | Interscience, Inc. | Optical pickup apparatus and method |
| US20050111341A1 (en) * | 2003-11-25 | 2005-05-26 | Zhang Sean Z. | Molecular optoelectronic memory device |
| US20140268998A1 (en) * | 2013-03-14 | 2014-09-18 | Crossbar, Inc. | Rram with dual mode operation |
| US20150347887A1 (en) * | 2014-06-03 | 2015-12-03 | IE-9 Technology Corp. | Optically Variable Data Storage Device |
| CN105796056A (en) * | 2016-03-02 | 2016-07-27 | 中国科学院上海微系统与信息技术研究所 | Terahertz medical imager based on metamaterials and manufacturing method thereof |
| CN106527045A (en) * | 2017-01-20 | 2017-03-22 | 中国科学院上海微系统与信息技术研究所 | Optical component-based method for information hiding and reproduction |
| CN107331773A (en) * | 2017-06-28 | 2017-11-07 | 深圳大学 | A kind of degradable albumen based transistor type memory and preparation method thereof |
| GB201813748D0 (en) * | 2018-08-23 | 2018-10-10 | Univ Hull | Optically switchable memory |
| CN111420707A (en) * | 2020-05-07 | 2020-07-17 | 西南大学 | Preparation of silk fibroin-iridium dioxide multifunctional composite nanocluster |
-
2021
- 2021-01-05 CN CN202110008817.3A patent/CN112820332A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6891791B1 (en) * | 1999-08-19 | 2005-05-10 | Interscience, Inc. | Optical pickup apparatus and method |
| EP1321890A1 (en) * | 2001-12-18 | 2003-06-25 | Istituto Poligrafico E Zecca Dello Stato | Optical data carrier having an optical diffractive code, and related reading apparatus |
| US20050111341A1 (en) * | 2003-11-25 | 2005-05-26 | Zhang Sean Z. | Molecular optoelectronic memory device |
| CN1622205A (en) * | 2003-11-25 | 2005-06-01 | 惠普开发有限公司 | Molecular optoelectronic memory device |
| US20140268998A1 (en) * | 2013-03-14 | 2014-09-18 | Crossbar, Inc. | Rram with dual mode operation |
| US20150347887A1 (en) * | 2014-06-03 | 2015-12-03 | IE-9 Technology Corp. | Optically Variable Data Storage Device |
| CN105796056A (en) * | 2016-03-02 | 2016-07-27 | 中国科学院上海微系统与信息技术研究所 | Terahertz medical imager based on metamaterials and manufacturing method thereof |
| CN106527045A (en) * | 2017-01-20 | 2017-03-22 | 中国科学院上海微系统与信息技术研究所 | Optical component-based method for information hiding and reproduction |
| CN107331773A (en) * | 2017-06-28 | 2017-11-07 | 深圳大学 | A kind of degradable albumen based transistor type memory and preparation method thereof |
| GB201813748D0 (en) * | 2018-08-23 | 2018-10-10 | Univ Hull | Optically switchable memory |
| CN111420707A (en) * | 2020-05-07 | 2020-07-17 | 西南大学 | Preparation of silk fibroin-iridium dioxide multifunctional composite nanocluster |
Non-Patent Citations (1)
| Title |
|---|
| ZHITAO ZHOU等，PROTEIN LITHOGRAPHY BEYOND THE DIFFRACTION LIMIT USING TERAHERTZ METAMATERIALS, 《2019 20TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS & EUROSENSORS XXXIII(TRANSDUCERS & EUROSENSORS XXXIII》, 22 August 2019 (2019-08-22) * |
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