CN112786555A - 一种功率模块封装结构及功率模块制造方法 - Google Patents

一种功率模块封装结构及功率模块制造方法 Download PDF

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CN112786555A
CN112786555A CN202110039127.4A CN202110039127A CN112786555A CN 112786555 A CN112786555 A CN 112786555A CN 202110039127 A CN202110039127 A CN 202110039127A CN 112786555 A CN112786555 A CN 112786555A
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layer
contact
carrier
power module
electrical connection
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王琇如
唐和明
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Great Team Backend Foundry Dongguan Co Ltd
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Great Team Backend Foundry Dongguan Co Ltd
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Abstract

本发明公开一种功率模块封装结构及功率模块制造方法，该功率模块封装结构包括：载体；功率晶片，其第一表面设有第一源极接点、第一栅极接点和第一漏极接点，第二表面设有第二源极接点、第二栅极接点和第二漏极接点；第一表面通过第一结合层结合于载体；第一表面的电极接点分别通过第一电连接件与载体电连接；第二表面的第二电极接点分别通过第二电连接件与载体电连接。该功率模块制造方法包括：准备步骤、第一结合步骤、第一电连步骤和第二电连步骤。该功率模块封装结构，对双面分别设有源极、栅极和漏极的功率晶片进行封装，在具备更多功能的同时，还可缩小体积；该功率模块制造方法，可制成具备更优性能且体积较小的功率模块封装结构。

Description

一种功率模块封装结构及功率模块制造方法
技术领域
本发明涉及半导体领域，尤其涉及一种功率模块封装结构及功率模块制造方法。
背景技术
现有的半导体功率模组，一般将两个或多个晶片焊在引线框架上，然后通过金属线实现晶片的电极之间的电性互连，以满足功率模组的功能设计需求。半导体封装产品(如半导体功率模组)的体积越小，越有利于提高器件的密集度、集成度。但是，现有技术中的功率模组的封装体积较大。
发明内容
本发明实施例的一个目的在于：提供一种功率模块封装结构，其可缩小体积。
本发明实施例的另一个目的在于：提供一种功率模块制造方法，其可缩小功率封装结构的体积。
为达上述目的，本发明采用以下技术方案：
一种功率模块封装结构，包括：
载体；
功率晶片，其具有相对的第一表面和第二表面；所述第一表面设有第一源极接点、第一栅极接点和第一漏极接点，所述第二表面设有第二源极接点、第二栅极接点和第二漏极接点；所述第一表面通过第一结合层结合于所述载体；
第一电连接件，所述第一源极接点、第一栅极接点和第一漏极接点分别通过所述第一电连接件与所述载体电连接；
第二电连接件，所述第二源极接点、第二栅极接点和第二漏极接点分别通过所述第二电连接件与所述载体电连接。
作为优选，所述功率晶片包括衬底层、形成于所述衬底层一侧的第一外延层、以及形成于所述衬底层另一侧的第二外延层；
所述第一源极接点、第一栅极接点和第一漏极接点形成于所述第一外延层背离所述衬底层的一侧；所述第二源极接点、第二栅极接点和第二漏极接点形成于所述第二外延层背离所述衬底层的一侧。
作为优选，所述功率晶片为碳化硅晶片；所述载体为引线框架、或陶瓷覆铜基板、或PCB板。
作为优选，所述第一结合层DAF层、或含银结合层、或烧结银层。
作为优选，当所述第一结合层为含银结合层或烧结银层时；
所述源极接点、第一栅极接点和第一漏极接点均为第一电极接点；
在高度方向上，所述第一电极接点的投影均位于所述第一结合层外，所述第一电连接件位于所述第一结合层外；或，所述第一电连接件位于所述第一结合层内，所述第一电连接件包括导电内核及包覆于所述导电内核外部的绝缘层，所述第一电极接点与所述导电内核电连接，所述导电内核与所述载体电连接。
作为优选，在所述功率晶片的第二表面设散热层，所述散热层为含银环氧树脂层或烧结银层。
作为优选，所述第二源极、第二栅极和第二漏极分别通过金属键合线与所述载体电连接；所述金属键合线为所述第二电连接件。
作为优选，所述功率模块封装结构还包括金属连接片和金属键合线，所述金属连接片和所述金属键合线均为所述第二电连接件；
所述第二栅极和所述第二漏极分别通过所述金属键合线与所述载体电连接；所述金属连接片的一端通过导电的第二结合层结合于所述第二表面，所述金属连接片的另一端与所述载体电连接，所述第二源极通过所述第二结合层、所述金属连接片与所述载体电连接，所述第二栅极、所述第二漏极在高度方向上的投影位于所述第二结合层外。
一种功率模块制造方法，包括封装制程，所述封装制程包括：
准备步骤：提供功率晶片和载体；提供的所述功率晶片具有相对的第一表面和第二表面，所述第一表面设有第一源极接点、第一栅极接点和第一漏极接点，所述第二表面设有第二源极接点、第二栅极接点和第二漏极接点；
第一结合步骤：采用第一结合材料将所述功率晶片的第一表面结合于所述载体；
第一电连步骤：采用第一电连接件将所述第一源极接点与所述载体电连接，采用第一电连接件将所述第一栅极接点与所述载体电连接，采用第一电连接件将所述第一漏极接点与所述载体电连接；
第二电连步骤：采用第二电连接件将所述第二源极接点与所述载体电连接，采用第二电连接件将所述第二栅极接点与所述载体电连接，采用第二电连接件将所述第二漏极接点与所述载体电连接。
作为优选，还包括晶圆制程，所述晶圆制程包括：提供半导体衬底；在所述半导体衬底的两侧分别生长第一外延层和第二外延层；在所述第一外延层上进行电路布设，形成若干第一源极、若干第一栅极和若干第一漏极；在所述第二外延层上进行电路布设，形成若干第二源极、若干第二栅极和若干第二漏极；
所述封装制程中，还包括晶圆切割步骤：将所述晶圆切割，得到若干所述功率晶片。
本发明的有益效果为：该功率模块封装结构，对双面分别设有源极、栅极和漏极的功率晶片进行封装，在功率模块具备更多功能的同时，还可缩小封装结构的体积；该功率模块制造方法，可制成具备更优性能且体积较小的功率模块封装结构。
附图说明
下面根据附图和实施例对本发明作进一步详细说明。
图1为本发明其一实施例所述功率模块封装结构的结构示意图；
图2为本发明又一实施例所述功率模块封装结构的结构示意图；
图3为本发明另一实施例所述功率模块封装结构的结构示意图；
图4为图3中的A部放大图；
图5为本发明另一实施例所述功率模块封装结构的结构示意图；
图中：10、载体；20、功率晶片；21、第一表面；22、第二表面；231、第一源极接点；232、第一栅极接点；233、第一漏极接点；241、第二源极接点；242、第二栅极接点；243、第二漏极接点；201、衬底层；202、第一外延层；203、第二外延层；31、第一结合层；32、第二结合层；33、散热层；41、第一电连接件；411、导电内核；412、绝缘层；420、第二电连接件；421、金属键合线；422、金属连接片。
具体实施方式
为使本发明解决的技术问题、采用的技术方案和达到的技术效果更加清楚，下面将结合附图对本发明实施例的技术方案作进一步的详细描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明的描述中，除非另有明确的规定和限定，术语“相连”、“固定”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
本发明提出一种功率模块封装结构，其采用的功率晶片20，在单个晶片的相对的两面分别形成了电路，在相对的两面分别形成了源极接点、栅极接点和漏极接点，对该功率晶片20进行封装，如此使该功率模块具备更高的性能的同时，兼具较小的体积，有利于提高元器件密集度。
如图1-5所示，在本发明的功率模块封装结构的一实施例中，该功率模块封装结构包括：
载体10；
功率晶片20，其具有相对的第一表面21和第二表面22；所述第一表面21设有第一源极接点231、第一栅极接点232和第一漏极接点233，第一源极接点231、第一栅极接点232和第一漏极接点233均为第一电极接点；所述第二表面22设有第二源极接点241、第二栅极接点242和第二漏极接点243，第二源极接点241、第二栅极接点242和第二漏极接点243均为第二电极接点；所述第一表面21通过第一结合层31结合于所述载体10，从而将功率晶片20固定于载体10；
第一电连接件41，所述第一源极接点231、第一栅极接点232和第一漏极接点233分别通过所述第一电连接件41与所述载体10电连接；
第二电连接件420，所述第二源极接点241、第二栅极接点242和第二漏极接点243分别通过所述第二电连接件420与所述载体10电连接。
其中，载体10还可以为其他类型的载体10，载体10用于支撑承载功率晶片20，并用于将功率晶片20上的电极接点与其他电路导通。
由于第一电极接点和第二电极接点分别位于功率晶片20相对的两面，当第一电极接点需要与第二电极接点电连接，以满足设计需求，实现更多功能时，如当第一源极接点231需要与第二源极接点241电连接时，通过载体10上的电路设计，将连接于第一源极接的第一电连接件41与连接于第二源极接点241的第二电连接件420电连接，从而实现第一源极接点231与第二源极接点241的电连接。
当然，在其他实施例中，也可根据实际需求，通过载体10上的电路设计以及第一电连接件41与第二电连接件420的配合，实现任意电极接点之间的电连接。
本实施例中，载体10采用PCB电路板或DBC陶瓷覆铜板，如此，便于实现第一电极接点与第二电极接点之间的导通。
在其他实施例中，载体10也可采用引线框架等。
本发明的功率模块封装结构，对双面分别设有源极、栅极和漏极的功率晶片20进行封装，采用的功率晶片20在晶圆制程中将两个晶片集成于同一个功率晶片20内，单个功率晶片20实际上可集成两个晶片的功能；该功率模块封装结构，既可避免不同晶片平铺在载体10上占用过多的平面空间影响元器件密集度，又可避免采用两个独立晶片堆叠时在两个晶片中间的结合材料层占用一定高度导致整个功率模块封装结构的高度的增加，该功率模块封装结构在具备多功能的同时，具备较小的体积。
在又一实施例中，所述功率晶片20包括衬底层201(N+Substrate)、形成于所述衬底层201一侧的第一外延层202、以及形成于所述衬底层201另一侧的第二外延层203；所述第一源极接点231、第一栅极接点232和第一漏极接点233形成于所述第一外延层202背离所述衬底层201的一侧；所述第二源极接点241、第二栅极接点242和第二漏极接点243形成于所述第二外延层203背离所述衬底层201的一侧；该功率晶片20由晶圆切割得到，在晶圆制程中，在衬底201的两侧分别生长晶层形成第一外延层202和第二外延层203，并在第一外延层202和第二外延层203上通过曝光显银、离子植入等工艺，在功率晶片20的一侧加工形成第一电极接点，另一侧加工形成第二电极接点。采用此种功率晶片20进行封装形成功率模块封装结构，有利于在提保证功率模块封装结构的功能的同时间距小体积。
在另一实施例中，为了提升该功率模块封装结构的性能，采用具有更高工作温度的Sic晶片(碳化硅晶片)作为功率晶片20。
优选地，功率晶片20与载体10之间，通过DAF层、或含银结合层、或烧结银层结合。其中，DAF层即由DAF结合材料(Die Attach Film)，含银结合层即掺杂有银的结合材料固化形成的结合层。
本实施例中，采用含银结合层作为第一结合层31，银具有良好的导热性能，在第一结合层31中掺银，可提高第一结合层31的导热性能，有利于将功率晶片20的热量传导至载体10，通过载体10将热量散发出外部，从而提高该功率模块封装结构的散热性能，从而使该功率模块封装结构具有更优的性能。采用含银结合层作为第一结合层31，而非采用烧结银层作为第一结合层31，在提高散热性能的同时，降低成本。
在本实施例中，含银结合层通过含银的环氧树脂材料固化形成。在其他实施例中，也可以采用其他含银结合材料。
在另一实施例中，如图1、5所示，当所述第一结合层31为含银结合层或烧结银层时，第一结合层31若与第一电连接件41接触，则可能导致短路，为了避免短路，在第一高度方向上，将第一电极接点设于第一结合层31的外部；在高度方向(z方向)上，所述第一电极接点的投影均位于所述第一结合层31外，所述第一电连接件41位于所述第一结合层31外；也即，在提供结合材料时，要避开第一电极接点对应的位置，使功率晶片20的第一表面21未设置第一电极接点的位置与第一结合层31结合；如此，可避免第一结合层31与第一电极接点、第一电连接件41、载体10上用于与第一电连接件41电连接的焊盘接触，从而避免短路。
在另一实施例中，如图2-4所示，当所述第一结合层31为含银结合层或烧结银层时，第一结合层31若与第一电连接件41接触，则可能导致短路，为了避免短路，采用的第一电连接件41包括导电内核411及包覆于导电内核411外部的绝缘层412，如此，功率晶片20的第一表面21可整面与第一结合层31结合，在高度方向上，所述第一电极接点的投影均位于所述第一结合层31内，所述第一电极接点与所述导电内核411电连接，所述导电内核411与所述载体10电连接；通过第一电连接件41外部的绝缘层412，可避免第一结合层31与第一电连接件41电连接，采用此种第一结合层31与第一电连接的配合方式，封装时相对简单，无需控制结合材料避免其接触第一电连接件41，且可避免短路。
在另一实施例中，为了提高功率晶片20的散热效果，在所述功率晶片20的第二表面22设散热层33，所述散热层33为含银环氧树脂层(Ag epoxy)或烧结银层。如此设置，功率晶片20的第一表面21可通过第一结合层31向外散热，第二表面22可通过散热层33向外散热，散热性能良好。
在另一实施例中，为了提升封装效率，第一结合层31和散热层33均采用含银环氧树脂层，如此，在封装时可采用相同的设备进行第一结合层31和散热层33的加工。
在另一实施例中，所述第二源极、第二栅极和第二漏极分别通过金属键合线421与所述载体10电连接；所述金属键合线421为所述第二电连接件420。
在另一实施例中，第一电连接件41为焊块，如锡球或锡块。
在另一实施例中，为了提升功率晶片20的散热性能，并提升功率晶片20的载流能力，所述功率模块封装结构还包括金属连接片422和金属键合线421，所述金属连接片422和所述金属键合线421均为所述第二电连接件420；
所述第二栅极和所述第二漏极分别通过所述金属键合线421与所述载体10电连接；所述金属连接片422的一端通过导电的第二结合层32结合于第一表面21，所述金属连接片422的另一端与所述载体10电连接，所述第二源极通过所述第二结合层32、所述金属连接片422与所述载体10电连接，所述第二栅极、所述第二漏极在高度方向上的投影位于所述第二结合层32外。
优选地，金属连接片422采用铜片(铜Clip)，铜具有良好的导电导热性能。
本实施例中，金属连接片422覆盖于功率晶片20的第二表面22，金属连接片422既将采将第二源极与载体10电连接，又可用于散热，且金属连接片422的导电面积大，可传导更大的电流，提升功率晶片20的性能，导电面积大从而可降低电阻和热阻，有利于提升散热性能。
优选地，第二结合层32为含银环氧树脂层。在其他实施例中，第二结合层32也可采用其他导电导热性能良好的结合层。
本发明还提出一种功率模块制造方法，该功率模块制造方法，可制成具备更优性能且体积较小的功率模块封装结构。
该功率模块制造方法包括晶圆制程和封装制程。
其中，晶圆制程包括：
提供半导体衬底201；
在所述半导体衬底201的两侧分别生长第一外延层202和第二外延层203；
在所述第一外延层202上进行电路布设，形成若干第一源极、若干第一栅极和若干第一漏极；
在所述第二外延层203上进行电路布设，形成若干第二源极、若干第二栅极和若干第二漏极。
具体的晶圆制程如下：
提供硅晶圆、双面清洗晶圆、对晶圆的相对两面进行氧化加工、对两面分别进行化学沉积加工形成第一外延层202和第二外延层203、对两面分别进行金属镀膜加工、对两面分别提供光罩、在两面分别提供光阻、对两面分别进行曝光、使两面分别显影、对两面分别进行蚀刻加工、对两面分别进行离子植入、将两面的光阻分别去除、在两面分别形成第一电极接点和第二电极接点、对两面分别进行测试。
其中，封装制程包括：
切割步骤：将上述晶圆制程中制程的晶圆进行切割，得到若干所述功率晶片20；
准备步骤：提供功率晶片20和载体10；提供的所述功率晶片20具有相对的第一表面21和第二表面22，所述第一表面21设有第一源极接点231、第一栅极接点232和第一漏极接点233，所述第二表面22设有第二源极接点241、第二栅极接点242和第二漏极接点243；
第一结合步骤：采用第一结合材料将所述功率晶片20的第一表面21结合于所述载体10；
第一电连步骤：采用第一电连接件41将所述第一源极接点231与所述载体10电连接，采用第一电连接件41将所述第一栅极接点232与所述载体10电连接，采用第一电连接件41将所述第一漏极接点233与所述载体10电连接；
第二电连步骤：采用第二电连接件420将所述第二源极接点241与所述载体10电连接，采用第二电连接件420将所述第二栅极接点242与所述载体10电连接，采用第二电连接件420将所述第二漏极接点243与所述载体10电连接。
在又一实施例中，在所述第一结合步骤中，在载体10的顶部印刷含银环氧树脂(Agepoxy)材料，经过烘烤固化，使含银环氧树脂材料固化形成第一结合层31，功率晶片20的底部的第一表面21通过第一结合层31与载体10结合。
优选地，该封装制程中，还包括散热层33提供步骤：在功率晶片20的顶部的第二表面22印刷含银环氧树脂(Ag epoxy)材料，经过烘烤固化，使含银环氧树脂材料固化形成散热层33。
优选地，在第一电连步骤中，在载体10上印刷焊锡，经过回流焊，第一源极、第一栅极、第一漏极分别通过焊锡与载体10电连接；焊锡固化后形成第一电连接件41。
优选地，在第二电连步骤中，采用金属键合线421作为第二电连接件420，通过打线或点胶的方式将第二源极、第二栅极、第二漏极分别引至载体10。
在另一实施例中，采用焊球作为第一电连接件41，通过热压焊工艺，将第一源极、第一栅极、第一漏极分别通过焊球焊接至载体10的焊盘上。
于本文的描述中，需要理解的是，术语“上”、“下”、“左、”“右”等方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述和简化操作，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”，仅仅用于在描述上加以区分，并没有特殊的含义。
在本说明书的描述中，参考术语“一实施例”、“示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。
此外，应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施例中的技术方案也可以适当组合，形成本领域技术人员可以理解的其他实施方式。
以上结合具体实施例描述了本发明的技术原理。这些描述只是为了解释本发明的原理，而不能以任何方式解释为对本发明保护范围的限制。基于此处的解释，本领域的技术人员不需要付出创造性的劳动即可联想到本发明的其它具体实施方式，这些方式都将落入本发明的保护范围之内。

Claims (10)

1.一种功率模块封装结构，其特征在于，包括：
载体(10)；
功率晶片(20)，其具有相对的第一表面(21)和第二表面(22)；所述第一表面(21)设有第一源极接点(231)、第一栅极接点(232)和第一漏极接点(233)，所述第二表面(22)设有第二源极接点(241)、第二栅极接点(242)和第二漏极接点(243)；所述第一表面(21)通过第一结合层(31)结合于所述载体(10)；
第一电连接件(41)，所述第一源极接点(231)、第一栅极接点(232)和第一漏极接点(233)通过所述第一电连接件(41)与所述载体(10)电连接；
第二电连接件(420)，所述第二源极接点(241)、第二栅极接点(242)和第二漏极接点(243)通过所述第二电连接件(420)与所述载体(10)电连接。
2.根据权利要求1所述的功率模块封装结构，其特征在于，所述功率晶片(20)包括衬底层(201)、形成于所述衬底层(201)一侧的第一外延层(202)、以及形成于所述衬底层(201)另一侧的第二外延层(203)；
所述第一源极接点(231)、第一栅极接点(232)和第一漏极接点(233)形成于所述第一外延层(202)背离所述衬底层(201)的一侧；所述第二源极接点(241)、第二栅极接点(242)和第二漏极接点(243)形成于所述第二外延层(203)背离所述衬底层(201)的一侧。
3.根据权利要求1所述的功率模块封装结构，其特征在于，所述功率晶片(20)为碳化硅晶片；所述载体(10)为引线框架、或陶瓷覆铜基板、或PCB板。
4.根据权利要求1所述的功率模块封装结构，其特征在于，所述第一结合层(31)DAF层、或含银结合层、或烧结银层。
5.根据权利要求4所述的功率模块封装结构，其特征在于，当所述第一结合层(31)为含银结合层或烧结银层时；
所述源极接点、第一栅极接点(232)和第一漏极接点(233)均为第一电极接点；
在高度方向上，所述第一电极接点的投影均位于所述第一结合层(31)外，所述第一电连接件(41)位于所述第一结合层(31)外；或，所述第一电连接件(41)位于所述第一结合层(31)内，所述第一电连接件(41)包括导电内核(411)及包覆于所述导电内核(411)外部的绝缘层(412)，所述第一电极接点与所述导电内核(411)电连接，所述导电内核(411)与所述载体(10)电连接。
6.根据权利要求4所述的功率模块封装结构，其特征在于，在所述功率晶片(20)的第二表面(22)设散热层(33)，所述散热层(33)为含银环氧树脂层或烧结银层。
7.根据权利要求1-6任一项所述的功率模块封装结构，其特征在于，所述第二源极、第二栅极和第二漏极分别通过金属键合线(421)与所述载体(10)电连接；所述金属键合线(421)为所述第二电连接件(420)。
8.根据权利要求1-5任一项所述的功率模块封装结构，其特征在于，所述功率模块封装结构还包括金属连接片(422)和金属键合线(421)，所述金属连接片(422)和所述金属键合线(421)均为所述第二电连接件(420)；
所述第二栅极和所述第二漏极分别通过所述金属键合线(421)与所述载体(10)电连接；所述金属连接片(422)的一端通过导电的第二结合层(32)结合于所述第二表面(22)，所述金属连接片(422)的另一端与所述载体(10)电连接，所述第二源极通过所述第二结合层(32)、所述金属连接片(422)与所述载体(10)电连接，所述第二栅极、所述第二漏极在高度方向上的投影位于所述第二结合层(32)外。
9.一种功率模块制造方法，其特征在于，包括封装制程，所述封装制程包括：
准备步骤：提供功率晶片(20)和载体(10)；提供的所述功率晶片(20)具有相对的第一表面(21)和第二表面(22)，所述第一表面(21)设有第一源极接点(231)、第一栅极接点(232)和第一漏极接点(233)，所述第二表面(22)设有第二源极接点(241)、第二栅极接点(242)和第二漏极接点(243)；
第一结合步骤：采用第一结合材料将所述功率晶片(20)的第一表面(21)结合于所述载体(10)；
第一电连步骤：采用第一电连接件(41)将所述第一源极接点(231)与所述载体(10)电连接，采用第一电连接件(41)将所述第一栅极接点(232)与所述载体(10)电连接，采用第一电连接件(41)将所述第一漏极接点(233)与所述载体(10)电连接；
第二电连步骤：采用第二电连接件(420)将所述第二源极接点(241)与所述载体(10)电连接，采用第二电连接件(420)将所述第二栅极接点(242)与所述载体(10)电连接，采用第二电连接件(420)将所述第二漏极接点(243)与所述载体(10)电连接。
10.根据权利要求8所述的功率模块制造方法，其特征在于，还包括晶圆制程，所述晶圆制程包括：提供半导体衬底(201)；在所述半导体衬底(201)的两侧分别生长第一外延层(202)和第二外延层(203)；在所述第一外延层(202)上进行电路布设，形成若干第一源极、若干第一栅极和若干第一漏极；在所述第二外延层(203)上进行电路布设，形成若干第二源极、若干第二栅极和若干第二漏极；
所述封装制程中，还包括晶圆切割步骤：将所述晶圆切割，得到若干所述功率晶片(20)。
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