CN112713503A - Temperature control method, device and equipment of semiconductor laser - Google Patents
Temperature control method, device and equipment of semiconductor laser Download PDFInfo
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- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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Abstract
The invention discloses a temperature control method, device and equipment of a semiconductor laser, and belongs to the technical field of lasers. The method comprises the steps of obtaining the current operating temperature of the semiconductor laser; acquiring a temperature difference value between the current operating temperature and a preset temperature; determining a temperature deviation according to the temperature difference; determining a target temperature control quantity according to the temperature deviation; and adjusting the current operating temperature of the semiconductor laser according to the target temperature control quantity, determining temperature deviation according to the temperature difference, determining the target temperature control quantity according to the temperature deviation, and realizing accurate detection and accurate control of the operating temperature of the semiconductor laser through the target temperature control quantity.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to a temperature control method, device and equipment of a semiconductor laser.
Background
With the wide application of optoelectronic devices in the fields of sensing, detection, communication and the like, a semiconductor laser (which has the advantages of micro size, high efficiency, simple structure, low price and the like and occupies a prominent development prospect, but the internal heat generated in the working process of the device can seriously influence the performance parameters of the device, cause the instability of the system work and seriously influence the service life of the device in the system, so the temperature of the semiconductor laser is required to be controlled.
The traditional temperature control technology has the limitations of the traditional temperature control technology, the adjustable range of temperature control is not large, and the precision of temperature control is not high; the semiconductor is very sensitive to temperature characteristics, which can cause the fluctuation of threshold current of an LD, red shift of emission wavelength, instability of a mode, poor communication quality of an optical fiber, increase of internal defects, seriously affect the service life of a device, bring great difficulty to application and fail to meet the requirements of social development.
The above is only for the purpose of assisting understanding of the technical aspects of the present invention, and does not represent an admission that the above is prior art.
Disclosure of Invention
The invention mainly aims to provide a method, a device and equipment for controlling the temperature of a semiconductor laser, and aims to solve the technical problem that the temperature of the semiconductor laser is not accurately controlled in the prior art.
In order to achieve the above object, the present invention provides a temperature control method of a semiconductor laser, the method comprising the steps of:
acquiring the current operating temperature of the semiconductor laser;
acquiring a temperature difference value between the current operating temperature and a preset temperature;
determining a temperature deviation according to the temperature difference;
determining a target temperature control quantity according to the temperature deviation;
and adjusting the current operating temperature of the semiconductor laser according to the target temperature control quantity.
Optionally, the acquiring the current operating temperature of the semiconductor laser includes:
detecting the material type and the composition structure of the semiconductor laser;
constructing a first corresponding relation between historical operating temperature and historical output power according to the material type and the composition structure;
acquiring historical laser parameters and historical micro-molecular parameters of the semiconductor laser and historical current parameters injected into the semiconductor laser;
constructing a second corresponding relation between the historical operating temperature and the historical output power according to the historical laser parameters, the historical micro-molecular parameters and the historical current parameters;
determining a target corresponding relation according to the first corresponding relation and the second corresponding relation;
and acquiring the current output power of the semiconductor laser, and determining the current operating temperature corresponding to the current output power according to the target corresponding relation.
Optionally, the acquiring the current operating temperature of the semiconductor laser includes:
collecting a current temperature signal of the semiconductor laser;
determining a target operating temperature according to the current temperature signal;
and taking the target operation temperature as the current operation temperature of the semiconductor laser.
Optionally, the determining a target operating temperature according to the current temperature signal includes:
acquiring a data code corresponding to the current temperature signal;
complementing the data codes through preset codes to obtain target data codes;
acquiring a preset number of codes from the target data codes according to a preset sequence;
detecting a code value corresponding to each code in the preset number of codes;
and determining the target operation temperature according to the coded value.
Optionally, the determining a target temperature control amount according to the temperature deviation includes:
acquiring the temperature adjusting frequency of a temperature control device on the semiconductor laser;
determining a temperature deviation rate according to the temperature adjusting frequency and the temperature deviation;
and adjusting the operating parameters of the temperature control device according to the temperature deviation rate to obtain a target temperature control quantity.
Optionally, the adjusting the current operating temperature of the semiconductor laser according to the target temperature control amount includes:
detecting a current direction in a temperature control device on the semiconductor laser;
determining a temperature adjusting direction according to the current direction;
and adjusting the current temperature of the semiconductor laser according to the target temperature control quantity and the temperature adjusting direction.
Optionally, after the adjusting the current operating temperature of the semiconductor laser according to the target temperature control amount, the method further includes:
detecting the operating temperature of the semiconductor laser at the current moment and the operating temperature of the semiconductor laser at the previous moment in real time;
determining the temperature change trend of the semiconductor laser according to the operating temperature at the current moment and the operating temperature at the previous moment;
and adjusting the operating temperature of the semiconductor laser in real time according to the temperature change trend.
In order to achieve the above object, the present invention also provides a temperature control device for a semiconductor laser, comprising:
the acquisition module is used for acquiring the current operating temperature of the semiconductor laser;
the calculation module is used for acquiring a temperature difference value between the current operation temperature and a preset temperature;
the calculation module is further used for determining a temperature deviation according to the temperature difference value;
the processing module is also used for determining a target temperature control quantity according to the temperature deviation;
and the adjusting module is used for adjusting the current operating temperature of the semiconductor laser according to the target temperature control quantity.
Optionally, the temperature control device of the semiconductor laser further includes: a detection module;
the detection module is used for detecting the operating temperature of the semiconductor laser at the current moment and the operating temperature of the semiconductor laser at the previous moment in real time;
determining the temperature change trend of the semiconductor laser according to the operating temperature at the current moment and the operating temperature at the previous moment;
and adjusting the operating temperature of the semiconductor laser in real time according to the temperature change trend.
Further, to achieve the above object, the present invention also proposes a temperature control apparatus of a semiconductor laser, comprising: the temperature control method comprises the following steps of a memory, a processor and a temperature control program of the semiconductor laser, wherein the temperature control program of the semiconductor laser is stored on the memory and can run on the processor, and is configured to realize the steps of the temperature control method of the semiconductor laser.
The method comprises the steps of obtaining the current operating temperature of the semiconductor laser; acquiring a temperature difference value between the current operating temperature and a preset temperature; determining a temperature deviation according to the temperature difference; determining a target temperature control quantity according to the temperature deviation; and adjusting the current operating temperature of the semiconductor laser according to the target temperature control quantity, determining temperature deviation according to the temperature difference, determining the target temperature control quantity according to the temperature deviation, and realizing accurate detection and accurate control of the operating temperature of the semiconductor laser through the target temperature control quantity.
Drawings
Fig. 1 is a schematic structural diagram of a temperature control apparatus for a semiconductor laser in a hardware operating environment according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of a first embodiment of a method for controlling the temperature of a semiconductor laser according to the present invention;
FIG. 3 is a schematic flow chart of a temperature control method for a semiconductor laser according to a second embodiment of the present invention;
FIG. 4 is a schematic flow chart of a third embodiment of a method for controlling the temperature of a semiconductor laser according to the present invention;
fig. 5 is a block diagram showing a first embodiment of a temperature control device for a semiconductor laser according to the present invention.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a temperature control device of a semiconductor laser in a hardware operating environment according to an embodiment of the present invention.
As shown in fig. 1, the temperature control apparatus of the semiconductor laser may include: a processor 1001, such as a Central Processing Unit (CPU), a communication bus 1002, a user interface 1003, a network interface 1004, and a memory 1005. Wherein a communication bus 1002 is used to enable connective communication between these components. The user interface 1003 may include a Display screen (Display), an input unit such as a Keyboard (Keyboard), and the optional user interface 1003 may also include a standard wired interface, a wireless interface. The network interface 1004 may optionally include a standard wired interface, a WIreless interface (e.g., a WIreless-FIdelity (WI-FI) interface). The memory 1005 may be a Random Access Memory (RAM) memory, or may be a Non-volatile memory (NVM), such as a disk memory. The memory 1005 may alternatively be a storage device separate from the processor 1001.
Those skilled in the art will appreciate that the configuration shown in fig. 1 does not constitute a limitation of the temperature control arrangement of the semiconductor laser, and may include more or fewer components than those shown, or some components in combination, or a different arrangement of components.
As shown in fig. 1, a memory 1005, which is a storage medium, may include therein an operating system, a network communication module, a user interface module, and a temperature control program of a semiconductor laser.
In the temperature control apparatus of a semiconductor laser shown in fig. 1, the network interface 1004 is mainly used for data communication with a network server; the user interface 1003 is mainly used for data interaction with a user; the processor 1001 and the memory 1005 in the temperature control device of the semiconductor laser of the present invention may be provided in the temperature control device of the semiconductor laser, which calls the temperature control program of the semiconductor laser stored in the memory 1005 through the processor 1001 and executes the temperature control method of the semiconductor laser provided by the embodiment of the present invention.
An embodiment of the present invention provides a method for controlling a temperature of a semiconductor laser, and referring to fig. 2, fig. 2 is a schematic flow chart of a first embodiment of the method for controlling the temperature of a semiconductor laser according to the present invention.
In this embodiment, the temperature control method of the semiconductor laser includes the following steps:
step S10: and acquiring the current operating temperature of the semiconductor laser.
It should be noted that the main implementation body of the present embodiment may be a temperature control system of a semiconductor laser, and may also be other systems or devices having the same or similar functions. The temperature control system of the semiconductor laser comprises a temperature sensor, a processor and a temperature control device, wherein the temperature sensor can collect temperature signals of the semiconductor laser in the operation process and then send the collected temperature signals to the processor. The processor can receive the temperature signals acquired by the temperature sensor in real time, analyze and process the temperature signals, generate corresponding control instructions according to the analysis and processing results, and send the control instructions to the temperature control device. The temperature control device can control the temperature of the semiconductor laser after receiving the control instruction, different control instructions correspond to different control parameters, and the temperature control device can control the temperature of the semiconductor laser according to the control parameters corresponding to the control instructions.
In this embodiment, a contact or non-contact temperature sensor may be used to acquire the current operating temperature of the semiconductor laser. The contact type temperature sensors include a thermocouple, a platinum resistor, a thermistor, and the like, and acquire the current operating temperature of the semiconductor laser in the form of heat conduction by contacting with the semiconductor laser. The non-contact temperature sensor comprises an infrared temperature sensor, and the current operating temperature of the semiconductor laser is obtained by acquiring infrared rays radiated by the semiconductor laser and utilizing the radiation heat effect. Further, the processor in the semiconductor laser temperature control system may adopt an embedded microprocessor, which is a processor with more than 32 bits, and the embedded microprocessor may adopt chips of types such as Am186/88, 386EX, SC-400, Power PC, 68000, MIPS, ARM, and StrongARM, and the chip types may be selected according to actual situations, which is not limited in this embodiment. It should be noted that the temperature control device in this embodiment may adopt a temperature controller, and the temperature controller includes a snap-action temperature controller, a hydraulic expansion temperature controller, a pressure temperature controller, and an electronic temperature controller. The semiconductor refrigerator can be used for producing cold energy by utilizing the thermoelectric effect of a semiconductor, after the semiconductor refrigerator is powered on, an electron hole pair is generated near an upper contact, the internal energy is reduced, the temperature is reduced, heat is absorbed to the outside, the semiconductor refrigerator is called a cold end, the other end is compounded due to the electron hole pair, the internal energy is increased, the temperature is increased, heat is released to the environment and is called a hot end, and the semiconductor refrigerator conveys heat or cold energy to the semiconductor laser through the hot end and the cold end.
In specific implementation, the temperature sensor may trigger an operation of acquiring the current operating temperature of the semiconductor laser based on a temperature detection instruction input by a user, or may set a preset time, and when the preset time is reached, the temperature sensor automatically acquires the current operating temperature of the semiconductor laser, and both the specific acquisition mode and the preset time may be set according to actual conditions, which is not limited in this embodiment. In addition, wireless communication can be performed among the temperature sensor, the processor, and the temperature control device through the internet or bluetooth, communication connection among the temperature sensor, the processor, and the temperature control device can also be established through a communication cable, wired communication is achieved, a specific signal transmission mode can be set according to an actual situation, and the embodiment is not limited to this.
Step S20: and acquiring a temperature difference value between the current operating temperature and the preset temperature.
It should be noted that the output wavelength, the output power, the service life and the like of the semiconductor laser are affected by the operating temperature, and particularly, the service life of the semiconductor laser is affected by the operating temperature, because the thermal expansion coefficients of the materials of the semiconductor laser are different, the temperature rise causes different thermal stresses to be generated inside the semiconductor laser, so that the tearing phenomenon occurs between the materials, and the end face of the resonant cavity of the semiconductor laser is also burnt. The preset temperature can be set to be a specific temperature value, the temperature difference can be obtained by calculating according to the current operating temperature and the preset temperature, the preset temperature can also be set to be a temperature range, the temperature difference at this time is the difference between the current operating temperature and the minimum temperature or the maximum temperature of the temperature range corresponding to the preset temperature, for example, the temperature range corresponding to the preset temperature is X-Y ℃, the current operating temperature is T ℃, and the temperature difference is | X-T | ° C or | Y-T | ° C. Further, selecting a difference value between the current operating temperature and a minimum value of the temperature range as a temperature difference value, or selecting a difference value between the current operating temperature and a maximum value of the temperature range as a temperature difference value according to the difference value, for example, the temperature range corresponding to the preset temperature is X-Y ℃, the current operating temperature is T ℃, the temperature difference value between the current operating temperature T ℃ and the minimum value of the temperature range is | X-T | ° c, the temperature difference value between the current operating temperature T ℃ and the maximum value of the temperature range Y | ° c is | Y-T | ° c, if | X-T | > | Y-T |, selecting | X-T | ° c as the temperature difference value between the current operating temperature and the preset temperature, if | X-T | < | Y-T | ° c, using | Y-T | ° c as the temperature difference value between the current operating temperature and the preset temperature, the preset temperature in this embodiment may be set according to actual control requirements, which is not limited in this embodiment.
Step S30: and determining the temperature deviation according to the temperature difference.
In a specific implementation, after the temperature difference is determined, the temperature difference can be used as a temperature deviation between a real-time temperature of the semiconductor laser and a target temperature, the real-time temperature is an actual operating temperature of the semiconductor laser, namely a current operating temperature, and the target temperature is a temperature which the semiconductor laser needs to reach, namely a preset temperature.
Step S40: and determining a target temperature control quantity according to the temperature deviation.
It should be noted that the temperature deviation indicates a temperature difference between the current operating temperature of the semiconductor laser and a preset temperature, and a target temperature control amount may be determined according to the temperature deviation, where the target temperature control amount is a temperature range that needs to be adjusted for the current operating temperature of the semiconductor laser, for example, if the target temperature control amount is determined to be Δ T according to the temperature deviation, Δ T ℃ needs to be adjusted for the current operating temperature of the semiconductor laser.
Further, in this embodiment, in order to obtain the target control amount more accurately, the step S40 specifically includes: acquiring the temperature adjusting frequency of a temperature control device on the semiconductor laser; determining a temperature deviation rate according to the temperature adjusting frequency and the temperature deviation; and adjusting the operating parameters of the temperature control device according to the temperature deviation rate to obtain a target temperature control quantity.
It should be noted that the temperature of the semiconductor laser changes in real time, and the temperature control device needs a certain time for adjusting the temperature of the semiconductor laser, which may cause the temperature control device to have hysteresis in adjusting the temperature of the semiconductor laser. According toThe obtained temperature adjustment frequency of the temperature control device may determine a temperature adjustment period corresponding to the temperature control device, and then, the temperature deviation rate may be determined by combining the temperature adjustment period and the temperature deviation, for example, if the temperature adjustment frequency of the temperature control device is f, the temperature adjustment period may be determined to be 1/f, and if the temperature deviation is P, the temperature deviation rate may be calculated by derivation to obtain dP/d (1/f). After the temperature deviation rate is obtained, the temperature deviation rate may be substituted into a preset relationship to calculate, that is, a target operation parameter corresponding to the temperature control device may be obtained, then the target operation parameter is adjusted by an initial operation parameter of the temperature control device, a temperature control amount output by the temperature control device according to the target operation parameter is a target temperature control amount, in this embodiment, the operation parameter may be calculated according to the following formula, where Δ C ═ (P, P ═t) Where Δ C is the parameter adjustment value, P is the temperature deviation, PtAs the temperature deviation ratio, (P, P)t) The functional relationship between the temperature deviation and the temperature deviation rate is expressed, in this embodiment, a membership function may be used to express the functional relationship between the temperature deviation and the temperature deviation rate, and a functional expression in other forms may also be used, which is not limited in this embodiment. After the parameter adjustment value is obtained, the initial operation parameter of the temperature controller is adjusted according to the parameter adjustment value, and then the target operation parameter can be obtained.
Step S50: and adjusting the current operating temperature of the semiconductor laser according to the target temperature control quantity.
It is easy to understand that the normal operation of the semiconductor laser is affected by the over-high or over-low temperature, and after the target temperature control quantity is obtained, the current operation temperature of the semiconductor laser is adjusted according to the temperature adjustment amplitude corresponding to the target temperature control quantity, so that the semiconductor laser can be ensured to normally operate at an appropriate temperature, wherein the temperature adjustment includes temperature reduction or temperature increase.
Further, in this embodiment, in order to adjust the current temperature more accurately, the step S50 specifically includes: detecting a current direction in a temperature control device on the semiconductor laser; determining a temperature adjusting direction according to the current direction; and adjusting the current temperature of the semiconductor laser according to the target temperature control quantity and the temperature adjusting direction.
It should be noted that, in this embodiment, the driving circuit is used to transmit the driving current to the temperature control device, and the driving current is used to control the temperature control device to adjust the temperature of the semiconductor laser, and since the normal operation of the semiconductor laser is affected by the over-high or over-low temperature, it is necessary to determine whether to heat or cool the semiconductor laser.
Further, in this embodiment, the operating temperature of the semiconductor laser at the current time and the operating temperature at the previous time may also be detected in real time, the temperature change trend of the semiconductor laser is determined according to the operating temperature at the current time and the operating temperature at the previous time, if the operating temperature at the current time is less than the operating temperature at the previous time, it is determined that the temperature of the semiconductor laser is decreasing, if the operating temperature at the current time is greater than the operating temperature at the previous time, it is determined that the temperature of the semiconductor laser is increasing, if the temperature is increasing, the semiconductor laser is cooled, and if the temperature is decreasing, the semiconductor laser is heated.
The present embodiment obtains the current operating temperature of the semiconductor laser; acquiring a temperature difference value between the current operating temperature and a preset temperature; determining a temperature deviation according to the temperature difference; determining a target temperature control quantity according to the temperature deviation; and adjusting the current operating temperature of the semiconductor laser according to the target temperature control quantity, determining temperature deviation according to the temperature difference, determining the target temperature control quantity according to the temperature deviation, and realizing accurate detection and accurate control of the operating temperature of the semiconductor laser through the target temperature control quantity.
Referring to fig. 3, fig. 3 is a schematic flow chart of a temperature control method for a semiconductor laser according to a second embodiment of the present invention.
Based on the first embodiment, the step S10 in this embodiment includes:
step S101: and detecting the material type and the composition structure of the semiconductor laser.
Step S102: and constructing a first corresponding relation between historical operating temperature and historical output power according to the material type and the composition structure.
It should be noted that, in this embodiment, the current operating temperature of the semiconductor laser is determined based on the output power of the semiconductor laser, and is based on the corresponding relationship between the historical output power and the historical operating temperature, and the corresponding relationship between the historical output power and the historical operating temperature is obtained by fusing two corresponding relationships, where one corresponding relationship may be determined based on the material type and the composition structure of the semiconductor laser. According to the detected material type and composition structure, the characteristic current and the characteristic temperature of the semiconductor laser can be determined, and then a first corresponding relation between the historical operating temperature and the historical output power is constructed according to the characteristic current and the characteristic temperature, G1＝I0(T/T0) Wherein G is1For a first correspondence between historical operating temperature and historical output power, I0Is a characteristic current, T0Is the characteristic temperature, and T is the historical operating temperature.
Step S103: and acquiring historical laser parameters and historical micro-molecular parameters of the semiconductor laser and historical current parameters injected into the semiconductor laser.
Step S104: and constructing a second corresponding relation between the historical operating temperature and the historical output power according to the historical laser parameter, the historical micro-molecular parameter and the historical current parameter.
It should be noted that, the processor is provided with a data memory, the memory may be a high-speed memory including 64 kbytes and 512 kbytes flash program memories, and may also be another form of processor, which is not limited in this embodiment. The historical laser parameters comprise laser output light power and output light frequency, and the historical micro-molecular parameters comprise microDividing quantum efficiency, historical current parameters including threshold current, injection current and unit charge amount, and establishing a second corresponding relation between historical operating temperature and historical output power according to the parameters, G2＝Vdhf/e(I-IMAX)-P，G2For a second correspondence between historical operating temperature and historical output power, VdFor the micro-molecular efficiency, f is the output light frequency, e unit charge, I is the injection current, IMAXIs the threshold current, P is the historical output power, and h is a constant.
Step S105: and determining a target corresponding relation according to the first corresponding relation and the second corresponding relation.
In a specific implementation, after the first corresponding relationship and the second corresponding relationship are obtained, the first corresponding relationship and the second corresponding relationship are fused, so that the target corresponding relationship P ═ ae can be obtained-bT-ce-dTWhere e is a unit charge amount, T is a historical operating temperature, P is a historical output power, a, b, c, and d are constants, a may be 97, b may be 0.004, c may be 0.186, and d may be 0.007.
Step S106: and acquiring the current output power of the semiconductor laser, and determining the current operating temperature corresponding to the current output power according to the target corresponding relation.
It is easy to understand that after the corresponding relationship between the historical output power and the historical operating temperature is obtained, the current operating temperature of the semiconductor laser can be obtained by substituting the obtained current output power of the semiconductor laser into the corresponding relationship.
The embodiment is implemented by a first corresponding relation between historical operating temperature and historical output power, which is constructed according to material types and composition structures; and obtaining a target corresponding relation between the historical operating temperature and the historical output power according to a second corresponding relation between the historical operating temperature and the historical output power, which is constructed by the historical laser parameters, the historical micro-molecular parameters and the historical current parameters, and determining the current operating temperature according to the target corresponding relation and the current output power of the semiconductor laser, so that the obtained current operating temperature of the semiconductor laser is more accurate.
Referring to fig. 4, fig. 4 is a schematic flow chart of a third embodiment of a temperature control method for a semiconductor laser according to the present invention.
Based on the first embodiment, step S10 in this embodiment further includes:
step S101': and collecting the current temperature signal of the semiconductor laser.
Step S102': and determining a target operating temperature according to the current temperature signal.
In this embodiment, the temperature obtained by the temperature sensor is not a specific temperature value of the semiconductor laser, but a current temperature signal of the semiconductor laser, and in this embodiment, the target operating temperature may be extracted from the current temperature signal based on a signal identifier corresponding to the current temperature signal. Specifically, the step S102' includes: acquiring a data code corresponding to the current temperature signal; complementing the data codes through preset codes to obtain target data codes; acquiring a preset number of codes from the target data codes according to a preset sequence; detecting a code value corresponding to each code in the preset number of codes; and determining the target operation temperature according to the coded value.
It should be noted that the current temperature signal is also data, and the data has corresponding data codes, but the data codes required in this embodiment need to satisfy a certain number of codes, and the data codes corresponding to the current temperature signal may be subjected to complement according to a preset code, and the positions of the complement codes may be arbitrarily selected, and the preset code may adopt binary codes or codes in other forms, which is not limited in this embodiment. For example, the data code corresponding to the current temperature signal is 0432, the number of codes meeting the requirement is 6, the complement is performed according to the binary code, and the target data code obtained is 043200. Further, a preset number of data codes are obtained from the target data codes according to a preset sequence, for example, the target data code is 0141H00, 5 data codes are obtained from the right sequence to obtain 0141H, and finally, the target operating temperature is determined according to the code values, for example, the operating temperature corresponding to 0141H is 20 °.
Step S103': and taking the target operation temperature as the current operation temperature of the semiconductor laser.
It is easy to understand that the target operating temperature is a temperature corresponding to the current temperature signal, i.e., the current operating temperature of the semiconductor laser.
In the embodiment, a data code corresponding to the current temperature signal is obtained; complementing the data codes through preset codes to obtain target data codes; acquiring a preset number of codes from the target data codes according to a preset sequence; detecting a code value corresponding to each code in the preset number of codes; and determining the target operating temperature according to the code value, and processing the data code corresponding to the temperature signal to more accurately acquire the current operating temperature of the semiconductor laser.
Referring to fig. 5, fig. 5 is a block diagram showing a temperature control apparatus for a semiconductor laser according to a first embodiment of the present invention.
As shown in fig. 5, a temperature control device for a semiconductor laser according to an embodiment of the present invention includes:
and the obtaining module 10 is used for obtaining the current operating temperature of the semiconductor laser.
And the calculating module 20 is configured to obtain a temperature difference between the current operating temperature and a preset temperature.
The calculating module 20 is further configured to determine a temperature deviation according to the temperature difference.
And the processing module 30 is further configured to determine a target temperature control amount according to the temperature deviation.
And the adjusting module 40 is configured to adjust the current operating temperature of the semiconductor laser according to the target temperature control amount.
The present embodiment obtains the current operating temperature of the semiconductor laser; acquiring a temperature difference value between the current operating temperature and a preset temperature; determining a temperature deviation according to the temperature difference; determining a target temperature control quantity according to the temperature deviation; and adjusting the current operating temperature of the semiconductor laser according to the target temperature control quantity, determining temperature deviation according to the temperature difference, determining the target temperature control quantity according to the temperature deviation, and realizing accurate detection and accurate control of the operating temperature of the semiconductor laser through the target temperature control quantity.
In an embodiment, the obtaining module 10 is further configured to detect a material type and a composition structure of the semiconductor laser; constructing a first corresponding relation between historical operating temperature and historical output power according to the material type and the composition structure; acquiring historical laser parameters and historical micro-molecular parameters of the semiconductor laser and historical current parameters injected into the semiconductor laser; constructing a second corresponding relation between the historical operating temperature and the historical output power according to the historical laser parameters, the historical micro-molecular parameters and the historical current parameters; determining a target corresponding relation according to the first corresponding relation and the second corresponding relation; and acquiring the current output power of the semiconductor laser, and determining the current operating temperature corresponding to the current output power according to the target corresponding relation.
In an embodiment, the obtaining module 10 is further configured to collect a current temperature signal of the semiconductor laser; determining a target operating temperature according to the current temperature signal; and taking the target operation temperature as the current operation temperature of the semiconductor laser.
In an embodiment, the obtaining module 10 is further configured to obtain a data code corresponding to the current temperature signal; complementing the data codes through preset codes to obtain target data codes; acquiring a preset number of codes from the target data codes according to a preset sequence; detecting a code value corresponding to each code in the preset number of codes; and determining the target operation temperature according to the coded value.
In an embodiment, the processing module 30 is further configured to obtain a temperature adjustment frequency of a temperature control device on the semiconductor laser; determining a temperature deviation rate according to the temperature adjusting frequency and the temperature deviation; and adjusting the operating parameters of the temperature control device according to the temperature deviation rate to obtain a target temperature control quantity.
In an embodiment, the adjusting module 40 is further configured to detect a current direction in a temperature control device on the semiconductor laser; determining a temperature adjusting direction according to the current direction; and adjusting the current temperature of the semiconductor laser according to the target temperature control quantity and the temperature adjusting direction.
In one embodiment, the temperature control apparatus of a semiconductor laser further includes: a detection module;
the detection module is used for detecting the operating temperature of the semiconductor laser at the current moment and the operating temperature of the semiconductor laser at the previous moment in real time; determining the temperature change trend of the semiconductor laser according to the operating temperature at the current moment and the operating temperature at the previous moment; and adjusting the operating temperature of the semiconductor laser in real time according to the temperature change trend.
It should be understood that the above is only an example, and the technical solution of the present invention is not limited in any way, and in a specific application, a person skilled in the art may set the technical solution as needed, and the present invention is not limited thereto.
It should be noted that the above-described work flows are only exemplary, and do not limit the scope of the present invention, and in practical applications, a person skilled in the art may select some or all of them to achieve the purpose of the solution of the embodiment according to actual needs, and the present invention is not limited herein.
In addition, the technical details that are not described in detail in this embodiment may be referred to a temperature control method of a semiconductor laser provided in any embodiment of the present invention, and are not described herein again.
Further, it is to be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.
The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments.
Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solution of the present invention or portions thereof that contribute to the prior art may be embodied in the form of a software product, where the computer software product is stored in a storage medium (e.g. Read Only Memory (ROM)/RAM, magnetic disk, optical disk), and includes several instructions for enabling a terminal device (e.g. a mobile phone, a computer, a server, or a network device) to execute the method according to the embodiments of the present invention.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A method of controlling temperature of a semiconductor laser, comprising:
acquiring the current operating temperature of the semiconductor laser;
acquiring a temperature difference value between the current operating temperature and a preset temperature;
determining a temperature deviation according to the temperature difference;
determining a target temperature control quantity according to the temperature deviation;
and adjusting the current operating temperature of the semiconductor laser according to the target temperature control quantity.
2. A method of temperature control of a semiconductor laser as claimed in claim 1 wherein said obtaining a current operating temperature of the semiconductor laser comprises:
detecting the material type and the composition structure of the semiconductor laser;
constructing a first corresponding relation between historical operating temperature and historical output power according to the material type and the composition structure;
acquiring historical laser parameters and historical micro-molecular parameters of the semiconductor laser and historical current parameters injected into the semiconductor laser;
constructing a second corresponding relation between the historical operating temperature and the historical output power according to the historical laser parameters, the historical micro-molecular parameters and the historical current parameters;
determining a target corresponding relation according to the first corresponding relation and the second corresponding relation;
and acquiring the current output power of the semiconductor laser, and determining the current operating temperature corresponding to the current output power according to the target corresponding relation.
3. A method of temperature control of a semiconductor laser as claimed in claim 1 wherein said obtaining a current operating temperature of the semiconductor laser comprises:
collecting a current temperature signal of the semiconductor laser;
determining a target operating temperature according to the current temperature signal;
and taking the target operation temperature as the current operation temperature of the semiconductor laser.
4. A method of temperature control of a semiconductor laser as claimed in claim 3 wherein said determining a target operating temperature from said current temperature signal comprises:
acquiring a data code corresponding to the current temperature signal;
complementing the data codes through preset codes to obtain target data codes;
acquiring a preset number of codes from the target data codes according to a preset sequence;
detecting a code value corresponding to each code in the preset number of codes;
and determining the target operation temperature according to the coded value.
5. A temperature control method of a semiconductor laser as claimed in claim 1 wherein said determining a target temperature control amount based on said temperature deviation comprises:
acquiring the temperature adjusting frequency of a temperature control device on the semiconductor laser;
determining a temperature deviation rate according to the temperature adjusting frequency and the temperature deviation;
and adjusting the operating parameters of the temperature control device according to the temperature deviation rate to obtain a target temperature control quantity.
6. A method of temperature control of a semiconductor laser as claimed in claim 1 wherein said adjusting a current operating temperature of said semiconductor laser in accordance with said target temperature control amount comprises:
detecting a current direction in a temperature control device on the semiconductor laser;
determining a temperature adjusting direction according to the current direction;
and adjusting the current temperature of the semiconductor laser according to the target temperature control quantity and the temperature adjusting direction.
7. A temperature control method of a semiconductor laser as claimed in any one of claims 1 to 6, further comprising, after adjusting the current operating temperature of the semiconductor laser in accordance with the target temperature control amount:
detecting the operating temperature of the semiconductor laser at the current moment and the operating temperature of the semiconductor laser at the previous moment in real time;
determining the temperature change trend of the semiconductor laser according to the operating temperature at the current moment and the operating temperature at the previous moment;
and adjusting the operating temperature of the semiconductor laser in real time according to the temperature change trend.
8. A temperature control device of a semiconductor laser, characterized by comprising:
the acquisition module is used for acquiring the current operating temperature of the semiconductor laser;
the calculation module is used for acquiring a temperature difference value between the current operation temperature and a preset temperature;
the calculation module is further used for determining a temperature deviation according to the temperature difference value;
the processing module is also used for determining a target temperature control quantity according to the temperature deviation;
and the adjusting module is used for adjusting the current operating temperature of the semiconductor laser according to the target temperature control quantity.
9. The temperature control apparatus of a semiconductor laser as claimed in claim 8, further comprising: a detection module;
the detection module is used for detecting the operating temperature of the semiconductor laser at the current moment and the operating temperature of the semiconductor laser at the previous moment in real time;
determining the temperature change trend of the semiconductor laser according to the operating temperature at the current moment and the operating temperature at the previous moment;
and adjusting the operating temperature of the semiconductor laser in real time according to the temperature change trend.
10. A temperature control apparatus of a semiconductor laser, characterized by comprising: a memory, a processor, and a temperature control program for a semiconductor laser stored on the memory and executable on the processor, the temperature control program for a semiconductor laser configured to implement the steps of the method for temperature control of a semiconductor laser as claimed in any one of claims 1 to 7.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113568455A (en) * | 2021-07-29 | 2021-10-29 | 武汉光迅科技股份有限公司 | Control method and device for temperature of refrigeration TOSA (transmitter optical subassembly) |
| CN114145508A (en) * | 2021-12-24 | 2022-03-08 | 湖南省拓联精密科技有限公司 | Temperature control method and device for electronic cigarette, electronic cigarette and medium |
| CN114860002A (en) * | 2022-05-19 | 2022-08-05 | 国网智能电网研究院有限公司 | Temperature control method and device for semiconductor light source in optical fiber current transformer |
| CN116638166A (en) * | 2023-07-21 | 2023-08-25 | 苏州松德激光科技有限公司 | Intelligent temperature control method and system for high-precision welding processing |
| CN117150580A (en) * | 2023-08-15 | 2023-12-01 | 速度科技股份有限公司 | Data storage hardware safety protection system of intelligent database |
| CN117420863A (en) * | 2023-10-30 | 2024-01-19 | 上海频准激光科技有限公司 | Method, equipment and medium for determining membership function type of gain medium material |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203658877U (en) * | 2014-01-14 | 2014-06-18 | 中能激光显示技术（上海）有限公司 | Semiconductor laser temperature control system |
| CN104655303A (en) * | 2015-02-04 | 2015-05-27 | 江苏农林职业技术学院 | Wireless temperature measuring system for bus of high-voltage electric cabinet |
| CN110822880A (en) * | 2019-11-21 | 2020-02-21 | 楚天科技股份有限公司 | Fuzzy control method and system for temperature of fluidized bed product and fluidized bed system |
-
2020
- 2020-12-29 CN CN202011611425.8A patent/CN112713503A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203658877U (en) * | 2014-01-14 | 2014-06-18 | 中能激光显示技术（上海）有限公司 | Semiconductor laser temperature control system |
| CN104655303A (en) * | 2015-02-04 | 2015-05-27 | 江苏农林职业技术学院 | Wireless temperature measuring system for bus of high-voltage electric cabinet |
| CN110822880A (en) * | 2019-11-21 | 2020-02-21 | 楚天科技股份有限公司 | Fuzzy control method and system for temperature of fluidized bed product and fluidized bed system |
Non-Patent Citations (1)
| Title |
|---|
| 郭建强等编著: "《光纤通信原理与仿真》", 31 May 2013 * |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114145508A (en) * | 2021-12-24 | 2022-03-08 | 湖南省拓联精密科技有限公司 | Temperature control method and device for electronic cigarette, electronic cigarette and medium |
| CN114145508B (en) * | 2021-12-24 | 2024-01-16 | 湖南省英洛康科技有限公司 | Temperature control method and device of electronic cigarette, electronic cigarette and medium |
| CN114860002A (en) * | 2022-05-19 | 2022-08-05 | 国网智能电网研究院有限公司 | Temperature control method and device for semiconductor light source in optical fiber current transformer |
| CN116638166A (en) * | 2023-07-21 | 2023-08-25 | 苏州松德激光科技有限公司 | Intelligent temperature control method and system for high-precision welding processing |
| CN116638166B (en) * | 2023-07-21 | 2023-10-31 | 苏州松德激光科技有限公司 | Intelligent temperature control method and system for high-precision welding processing |
| CN117150580A (en) * | 2023-08-15 | 2023-12-01 | 速度科技股份有限公司 | Data storage hardware safety protection system of intelligent database |
| CN117150580B (en) * | 2023-08-15 | 2024-04-02 | 速度科技股份有限公司 | Data storage hardware safety protection system of intelligent database |
| CN117420863A (en) * | 2023-10-30 | 2024-01-19 | 上海频准激光科技有限公司 | Method, equipment and medium for determining membership function type of gain medium material |
| CN117420863B (en) * | 2023-10-30 | 2024-04-19 | 上海频准激光科技有限公司 | Method, equipment and medium for determining membership function type of gain medium material |
| CN117595057A (en) * | 2024-01-18 | 2024-02-23 | 北京卓镭激光技术有限公司 | Laser power control method and device based on crystal temperature |
| CN117595057B (en) * | 2024-01-18 | 2024-04-26 | 北京卓镭激光技术有限公司 | Laser power control method and device based on crystal temperature |
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