CN112702474B - Light field imaging system and light field imaging method - Google Patents
Light field imaging system and light field imaging method Download PDFInfo
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Abstract
The invention discloses a light field imaging system, comprising: a light source device for emitting electromagnetic wave beams in a specific frequency range to a target to be measured; the light field acquisition device receives a 4D light field formed by the electromagnetic wave beam reflected by the measured target; the image processing unit is used for processing the 4D light field received by the light field acquisition device to generate 4D light field information of the measured target; wherein the image processing unit executes the following processing: acquiring 4D light field information of the measured target; calculating a highlight image in the 4D light field information using the 4D light field information; and carrying out intensity-direction filtering and reconstruction on the 4D light field information by combining the highlight image to obtain a reconstructed image after chromatography of the 4D light field information. According to the structure, layer-by-layer resolution and respective reconstruction imaging of a specific multilayer material are realized, and the mixing of information from different layers in the traditional method is avoided.
Description
Technical Field
The invention relates to the technical field of light field imaging, in particular to a light field imaging system and a light field imaging method by utilizing a light field chromatography technology.
Background
In the field of industrial nondestructive inspection, inspection and perspective imaging of objects including longitudinal internal structures, such as composite materials, have been the subject and direction of great interest. Among them, the method of performing fluoroscopic imaging with electromagnetic waves of a specific wavelength band (such as centimeter waves, millimeter waves, terahertz waves, infrared thermal waves, X-rays, etc.) has the highest versatility and the most common application thereof, utilizing the characteristics of the imaging target. Due to the progress of semiconductor technology, the area array detector working in different wave bands has higher and higher integration level and performance parameters, and the abundant information quantity provides feasibility for computational imaging. For objects containing internal longitudinal structures, such as multilayer coatings and composite sandwiches, aliasing can result from conventional two-dimensional imaging. Perspective imaging and probing based on electromagnetic wave means have long relied on pulse and coherent detection methods. Specifically, a single point on a sample is sent out and then the longitudinal structure of the sample is restored through processing echo time-frequency characteristics. Such detection means enable information about the longitudinal structure of the sample to be obtained, which is not the case with conventional detection means based on focal plane detectors; at the same time, however, such imaging methods usually rely on point-by-point scanning to obtain lateral information about the imaging target, and although longitudinal information with extremely high accuracy can be obtained, the imaging speed and range in the lateral direction are limited, which limits the application of such detection methods.
As a new calculation imaging mode based on a focal plane detector, the optical field imaging has been widely applied to visible light wave bands, and some researches have been reported on the use of the optical field imaging in terahertz and infrared wave bands. Light field imaging additional information and enhancements can be obtained about multiple dimensions of the imaged object through extraction and reconstruction of the 4D light field of the imaged object. However, for the existing light field depth estimation method based on defocus (defocus) and similarity (coreespondence), on one hand, the depth resolution capability of the algorithm itself is not enough to resolve the longitudinal structures which are very close to each other; on the other hand, for different electromagnetic wave bands, the geometric optics and uniform diffuse reflector simplification conditions in the conventional light field imaging are not necessarily satisfied all the time, which may further reduce the robustness of the conventional light field depth estimation algorithm.
The high-integration and high-performance semiconductor element working in a wider electromagnetic spectrum band provides convenience for quick and high-resolution imaging of different electromagnetic spectrum bands and provides feasibility for application of a light field imaging technology in more spectrum bands. But for multilayer materials that require perspective probing, information about individual layers cannot be effectively resolved by these techniques.
Disclosure of Invention
The present invention is made to solve the above technical problems, and an object of the present invention is to provide an optical field imaging system and an optical field imaging method using an optical field tomography technique, which can perform tomographic resolution on a target to be measured having a multilayer structure with different reflective properties in an incoherent manner.
In order to achieve the above object, the present invention relates to a light field imaging system, including: a light source device for emitting electromagnetic wave beams in a specific frequency range to a target to be measured; the light field acquisition device receives a 4D light field formed by the electromagnetic wave beam reflected by the measured target; the image processing unit is used for processing the 4D light field received by the light field acquisition device to generate 4D light field information of the measured target; wherein the image processing unit executes the following processing: acquiring 4D light field information of the measured target; calculating a highlight image in the 4D light field information using the 4D light field information; and carrying out intensity-direction filtering and reconstruction on the 4D light field information by combining the highlight image to obtain a reconstructed image after chromatography of the 4D light field information.
In addition, the invention also provides a light field imaging method, which comprises the following steps: the light source device emits electromagnetic wave beams in a specific frequency range to a measured target; the light field acquisition device receives a 4D light field image formed by the electromagnetic wave beam reflected by the measured target; the image processing unit processes the 4D light field image received by the light field acquisition device to generate 4D light field information of the measured target; wherein the image processing unit further performs the steps of: acquiring 4D light field information of the measured target; calculating a highlight image in the 4D light field information using the 4D light field information; and carrying out intensity-direction filtering and reconstruction on the 4D light field information by combining the highlight image to obtain a reconstructed image after chromatography of the 4D light field information.
As can be seen from the above description and practice, the light field imaging method of the present invention obtains the 4D light field information L of the measured object by calculation F And (x, y, u, v) and using the highlight image to perform intensity-direction-based filtering and reconstruction on the 4D light field information, thereby obtaining a reconstructed image after chromatography of the 4D light field information. The invention utilizes the reflection property difference characteristics based on the strength-direction aspect among all layers of the structure of the object to be detected, realizes effective chromatography on specific multilayer thin media in a light field imaging (incoherent) mode, can reconstruct images of all layers, and can quickly acquire the longitudinal structure of the object to be detected.
Drawings
Fig. 1 is a schematic structural diagram of a light field imaging system related to the present invention.
Fig. 2 is a schematic cross-sectional view showing an object to be measured used in the light field imaging system of the present invention.
Fig. 3 is a schematic diagram of a light field imaging system according to the present invention in which 4D light field information is represented on two different planes.
In the figure: 1. the device comprises a light source device 2, a light field acquisition device 3, a measured object 4, an electromagnetic wave source 5, a filter 6 and a collimation optical system.
Detailed Description
Exemplary embodiments will now be described more fully with reference to the accompanying drawings. The exemplary embodiments, however, may be embodied in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
Furthermore, the drawings are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and thus their repetitive description will be omitted. Some of the block diagrams shown in the figures are functional entities and do not necessarily correspond to physically or logically separate entities. These functional entities may be implemented in the form of software, or in one or more hardware modules or integrated circuits, or in different networks and/or processor devices and/or microcontroller devices.
Fig. 1 is a schematic structural diagram of a light field imaging system according to the present invention. As shown in fig. 1, in the light field imaging system of the present invention, a light source device 1, a light field acquisition device 2, and an image processing unit (not shown in the figure) are included. The light source device 1 includes an electromagnetic wave emission source 4, a filter 5 and a collimating optical system 6, wherein the electromagnetic wave emitted from the electromagnetic wave emission source 4 is filtered by the filter 5, and then collimated by the collimating optical system 6, and then emitted to the target 3 to be measured in the optical field forming system at an angle of 0-45 degrees, for example.
Here, the electromagnetic wave emission source 1 may emit an electromagnetic wave of a specific wavelength band, such as a centimeter wave, a millimeter wave, a terahertz wave, an infrared thermal wave, an X-ray, and the like. In this embodiment, the electromagnetic wave emission source 4 emits a continuous wave terahertz wave as probe light whose physical properties can form penetration or partial penetration and reflection to a multilayer material under test. Specifically, the electromagnetic wave emission source 4 may be a point light source or a collimated light source.
The electromagnetic waves irradiated to the measured object 3 are reflected at the measured object 3, and the reflected electromagnetic waves form a 4D light field and are finally received by the light field acquisition device 2. An image processing unit, not shown, generates 4D light field information of the object 3 using the 4D light field received by the light field acquisition device 2.
The light field acquisition device 2 can receive a 4D light field which is emitted by the light source device 1 and is formed by reflection of the measured object 3 through a real aperture, a synthetic aperture or a compressed sensing mode. In this embodiment, a synthetic aperture based on a virtual camera array is used.
Fig. 2 is a schematic cross-sectional view showing an object to be measured used in the light field imaging system of the present invention. As shown in the figure, the target 3 to be measured is a multilayer structure having spatially overlapping and different Bidirectional Reflection Distribution Function (BRDF) characteristics. The reflection of part of the layers is mainly specular reflection, the energy of the reflected light is concentrated in a specific direction, and the direction range does not cover the whole aperture of the light field acquisition device 2 at the position of the camera plane. The reflection of the partial layer is mainly diffuse reflection, and the energy of the reflected light is distributed in an unspecified direction range.
The virtual camera array of the light field acquisition device 2 is realized by simulation in a mode that the electric control translation stage bears a plurality of camera modules, and each camera module acquires a light field respectively. In this embodiment, a high-resolution terahertz camera based on a focal plane detector is employed. In addition, in order to filter electromagnetic wave signals other than the terahertz wave band emitted by the light source device 1 in the environment, a filter may be further mounted on the camera module. The electronic control translation stage can drive the camera to move in the xy direction perpendicular to the optical axis of the camera.
In addition, the target 3 is a multilayer material having different reflection characteristics. In this embodiment, the structure shown in fig. 2 is selected, which is composed of a thin silicon wafer and a metal plate with a rust layer from top to bottom. Wherein the surface of the metal plate is provided with a rust layer with an average size of about 40um, the rust layer can form scattering and diffuse reflection on the terahertz wave beam, the thickness of the thin silicon wafer is about 200um, the double surfaces of the thin silicon wafer are polished, the terahertz wave beam is partially transmitted and partially reflected, and the scattering caused by nonuniformity can be ignored. The terahertz wave beam partially penetrates through the thin silicon wafer and irradiates on the surface of the metal plate (namely the rust layer) to form diffuse reflection, and the partial terahertz wave beam partially forms mirror reflection on the surface of the thin silicon wafer. The thin silicon wafer and the metal plate with the rusty layer simulate multilayer materials with different reflection characteristics in a close stacking mode, the silicon wafer is used for simulating specular reflection occurring on the surface layer, and the rusty layer of the metal plate is used for simulating diffuse reflection occurring on the substrate.
When the measured target with the multilayer materials with different reflection characteristics is imaged, an optical field chromatography method based on intensity-direction filtering is adopted, so that images of different layers of the measured target are reconstructed. The light field chromatography method based on the intensity-direction filtering comprises the following steps:
step S1, acquiring 4D light field information L of a detected target 3 F (x,y,u,v)。
The 4D light field information is formed by a plenoptic function L based on a biplane model F (x, y, u, v) expression each ray in the light field is described by the coordinates of the intersection of the ray with two parallel planes. Specifically, two parallel planes uv and xy with fixed distances are constructed in space, and each beam of light can respectively intersect with the uv plane and the xy plane. And the light ray sets respectively passing through all coordinates on the uv plane and the xy plane form a complete 4D light field. As shown in fig. 3, the bi-plane representation method of the 4D light field is to match the light field acquisition means used in practice. Wherein x is more than or equal to 0 and less than or equal to x raw ，0≤y≤y raw ，0≤u≤u raw ，0≤v≤v raw ，0≤L F (x,y,u,v)≤1，x raw 、y raw 、u raw 、v raw For the 4D light field information L F The sizes of (x, y, u, v), which are all in units of pixels.
In this embodiment, with the above actively illuminated reflective terahertz light field imaging system, the object 3 to be measured is placed on the observation platform, the illumination angle of the light source device 1 is adjusted to make the incident angle of the terahertz beam emitted by the light source to the object 3 to be measured, for example, 20 °, the camera plane where the virtual camera array is located in the light field acquisition device 2 is adjusted to make the plane perpendicular to the direction of the terahertz beam specularly reflected by the object to be measured, and thus, the echo from the specular reflection and diffuse reflection of the object to be measured is received. In other embodiments, the included angle between the plane of the camera where the virtual camera array is located and the terahertz beam specularly reflected by the target to be measured can be adjusted, but the included angle should be in the range of 45 ° to 135 °.
The distance between the light source device 1 and the object to be measured is set to 1600mm, for example, and the distance between the camera plane where the virtual camera array is located and the object to be measured is 600mm, for example. The active illumination reflection type terahertz light field imaging system can obtain 4D light field information L of a detected target F (x,y,u,v)。
S2, calculating a highlight image L in the 4D light field information of the detected target 3 gloss (x,y,u,v)。
In calculating highlight image L gloss (x, y, u, v) first a saturated image L needs to be calculated saturation (x, y, u, v) according to the saturated image L saturation (x, y, u, v) and then calculating to obtain a highlight image L gloss (x,y,u,v)。
Specifically, the saturated image L saturation The formula for (x, y, u, v) is:
in the formula 1, T is a threshold value for distinguishing the specular reflection and the diffuse reflection of the measured target 3, the value range of T is more than or equal to 0 and less than or equal to 1 0 For the convolution kernel for smoothing the image, K 0 Has a value range of 0<K 0 ≤min{x raw ,y raw }。K 0 Which is a mask, can also be understood as a function of a matrix or two-dimensional distribution, whose dimensions are also in pixels,and K 0 Should be smaller than the size of the smallest edge of the sub-image of the measured object 3 in the xy-plane.
Specifically, highlight image L gloss The formula for (x, y, u, v) is:
in the formula 2, K is a convolution kernel for discriminating the influence of the specular reflection of the object 3 to be measured on the peripheral pixels. K has a value in the range of 0<K≤min{x raw ,y raw }. K is a mask, which can also be understood as a function of a matrix or two-dimensional distribution, whose dimensions are also in pixels, and whose dimensions should be smaller than the dimensions of the smallest edge of the sub-image of the measured object 3 in the xy plane.
Step S3, combining the highlight image L gloss (x, y, u, v) carrying out intensity-direction filtering and reconstruction on the 4D light field information to obtain a reconstructed image E after chromatography of the 4D light field information surface And E base 。
In this example, E surface Is an image reconstructed from a 4D light field of a specular reflection layer of the object 3 under test, E base Is an image reconstructed from the 4D light field of the diffuse reflective layer of the object 3 under test.
In the calculation of E surface Firstly, a reconstruction result E of any point in the specular reflection layer of the measured object 3 is obtained surface (x 0 ,y 0 ) Then, the reconstruction results of all the points in the specular reflection layer are collected, and a reconstructed image E of the specular reflection layer can be obtained surface (ii) a In the calculation of E base Firstly, a reconstruction result E of any point in a diffuse reflection layer of a measured target is obtained base (x 0 ,y 0 ) Then, the reconstruction results of all the points in the diffuse reflection layer are collected, and a reconstructed image E of the diffuse reflection layer can be obtained base 。
Specifically, specular reflective layer image E surface (x 0 ,y 0 ) The calculation formula of (2) is as follows:
E surface (x 0 ,y 0 )＝∫∫L z (x′,y′,u,v)·L gloss (x ', y', u, v) dudv (equation 3)
Diffuse reflection layer image E base (x 0 ,y 0 ) The calculation formula of (2) is as follows:
E base (x 0 ,y 0 )＝∫∫L z (x′,y′,u,v)·(1-L gloss (x ', y', u, v)) dudv (equation 4)
In the above equations 3 and 4, L z (x ', y', u, v) is the 4D light field information of the measured object expressed by the uv plane and the x 'y' plane, and the calculation formula is:
in the formula 5, F is a distance between the uv plane and the xy plane, and z is a distance between the uv plane and the x 'y' plane. As shown in fig. 3, the uv plane, the xy plane and the x 'y' plane are three mutually parallel planes, and are used to represent 4D light field information of the measured object.
In addition, in the formulas (3) and (4), L gloss The formula for the calculation of (x ', y', u, v) is:
k in the formula 6 has the same value as K in the formula 2. T and K in said formula 7 0 And T and K in said formula 1 0 The values of (A) are the same.
Therefore, the chromatography of the 4D light field information can be realized, so that a reconstructed image between different layers of a detected target is obtained, and the application range of terahertz imaging is widened.
It should be noted that the above-mentioned pair of the acquired 4D light fields of the measured object 3Information L F The tomographic processing of (x, y, u, v) can be independently calculated by an electronic computer, or can be calculated by an image processing unit in the active illumination reflective optical field imaging system, that is, a calculation module capable of performing the tomographic processing can be integrated in the image processing unit.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
Claims (2)
1. A light field imaging system, comprising:
a light source device for emitting electromagnetic wave beams in a specific frequency range to a target to be measured;
the light field acquisition device receives a 4D light field formed by the electromagnetic wave beam reflected by the measured target; and
the image processing unit is used for processing the 4D light field received by the light field acquisition device to generate 4D light field information of the measured target;
wherein the image processing unit executes the following processing:
acquiring 4D light field information of the detected target;
calculating a highlight image in the 4D light field information using the 4D light field information;
combining the highlight image to carry out intensity-direction filtering and reconstruction on the 4D light field information to obtain a reconstructed image after chromatography of the 4D light field information;
when the image processing unit acquires 4D light field information of a detected target, the detected target has a multilayer structure, and each layer of structure has different intensity-direction characteristics for the electromagnetic wave beam;
the obtained object to be measuredTarget 4D light field information is set to L F When (x, y, u, v), x is 0-x raw ，0≤y≤y raw ，0≤u≤u raw ，0≤v≤v raw ，0≤L F (x,y,u,v)≤1，x raw 、y raw 、u raw 、v raw For the 4D light field information L F (x, y, u, v) size;
the measured target comprises a specular reflection layer and a diffuse reflection layer;
when calculating the highlight image in the 4D light-field information,
calculating the 4D light field information L according to the following formula 1 by taking the intensity as a criterion F (x, y, u, v) saturated image L saturation (x,y,u,v)：
Wherein T is a threshold value for distinguishing specular reflection and diffuse reflection of the measured target, T is more than or equal to 0 and less than or equal to 1 0 For the convolution kernel for smoothing the image, 0<K 0 ≤min{x raw ,y raw }；
And, the saturated image L is based on the following formula 2 saturation (x, y, u, v) calculating the highlight image L gloss (x,y,u,v)：
Wherein K is a convolution kernel for discriminating the influence of the specular reflection of the measured object on the peripheral pixels, 0<K≤min{x raw ,y raw }；
Performing intensity-direction filtering and reconstruction on the 4D light field information by combining the highlight image to obtain a reconstructed image after chromatography of the 4D light field information,
obtaining a reconstruction result E of any point in the specular reflection layer of the measured target surface (x 0 ,y 0 ) And a reconstruction result E of any point in the diffuse reflection layer base (x 0 ,y 0 ) Then, all points in the specular reflection layer and all points in the diffuse reflection layer are collected to obtain a reconstructed image E surface 、E base ；
Obtaining the reconstructed image E according to the following formula 3 and formula 4 surface (x 0 ,y 0 ) And E base (x 0 ,y 0 )：
E surface (x 0 ,y 0 )＝∫∫L z (x′,y′,u,v)·L gloss (x ', y', u, v) dudv (equation 3),
E base (x 0 ,y 0 )＝∫∫L z (x′,y′,u,v)·(1-L gloss (x ', y', u, v)) dudv (equation 4),
wherein L is z (x ', y', u, v) is the 4D light field information represented by the uv plane and the x 'y' plane, and is calculated by the formula:
wherein, F is the distance between the uv plane and the xy plane, and z is the distance between the uv plane and the x 'y' plane;
L gloss (x ', y', u, v) is determined by the following equations 6, 7:
2. a light field imaging method, comprising the steps of:
the light source device emits electromagnetic wave beams in a specific frequency range to a measured target;
the light field acquisition device receives a 4D light field formed by the electromagnetic wave beam reflected by the measured target;
the image processing unit processes the 4D light field received by the light field acquisition device to generate 4D light field information of the measured target;
wherein the image processing unit further performs the steps of:
acquiring 4D light field information of the detected target;
calculating a highlight image in the 4D light field information using the 4D light field information;
carrying out intensity-direction filtering and reconstruction on the 4D light field information by combining the highlight image to obtain a reconstructed image after chromatography of the 4D light field information;
when the image processing unit acquires 4D light field information of a detected target, the detected target has a multilayer structure, and each layer of structure has different intensity-direction characteristics for the electromagnetic wave beam;
setting the acquired 4D light field information of the measured object as L F When (x, y, u, v), x is 0-x raw ，0≤y≤y raw ，0≤u≤u raw ，0≤v≤v raw ，0≤L F (x,y,u,v)≤1，x raw 、y raw 、u raw 、v raw For the 4D light field information L F (x, y, u, v) size;
the measured target comprises a specular reflection layer and a diffuse reflection layer;
when calculating highlight images in the 4D light field information,
calculating the 4D light field information L according to the following formula 1 by taking the intensity as a criterion F (x, y, u, v) saturated image L saturation (x,y,u,v)：
Wherein T is a threshold value for distinguishing specular reflection and diffuse reflection of the measured target, T is more than or equal to 0 and less than or equal to 1 0 For the convolution kernel for smoothing the image, 0<K 0 ≤min{x raw ,y raw }；
And, according to the followingEquation 2 depends on the saturated image L saturation (x, y, u, v) calculating the highlight image L gloss (x,y,u,v)：
Wherein K is a convolution kernel for discriminating the influence of the specular reflection of the measured object on the peripheral pixels, 0<K≤min{x raw ,y raw }；
Performing intensity-direction filtering and reconstruction on the 4D light field information by combining the highlight image to obtain a reconstructed image after chromatography of the 4D light field information,
obtaining a reconstruction result E of any point in the specular reflection layer of the measured target surface (x 0 ,y 0 ) And a reconstruction result E of any point in the diffuse reflection layer base (x 0 ,y 0 ) Then, all points in the specular reflection layer and all points in the diffuse reflection layer are collected to obtain a reconstructed image E surface 、E base ；
Obtaining the reconstructed image E according to the following formula 3 and formula 4 surface (x 0 ,y 0 ) And E base (x 0 ,y 0 )：
E surface (x 0 ,y 0 )＝∫∫L z (x′,y′,u,v)·L gloss (x ', y', u, v) dudv (equation 3),
E base (x 0 ,y 0 )＝∫∫L z (x′,y′,u,v)·(1-L gloss (x ', y', u, v)) dudv (equation 4),
wherein L is z (x ', y', u, v) is the 4D light field information represented by the uv plane and the x 'y' plane, and the calculation formula is:
wherein, F is the distance between the uv plane and the xy plane, and z is the distance between the uv plane and the x 'y' plane;
L gloss (x ', y', u, v) is determined by the following equations 6, 7:
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